TWI303828B - A method and a system for erasing a nonvolatile memory - Google Patents

Description

1303828 IX. Invention Description·· 【Technical field to which the invention belongs】 When writing, this is the m-view, the new method of writing, the memory of the «writing method. $ kinds of TI wipe [previous technology] Regularly L 隹 快 快 魏 魏 魏 魏 魏 都 都 都 都 都 都 都 都 都 都 都 都 魏 魏 都 都 都 都 都 都 都 都 都 都 都 都 都 都 都 都 都 辅 辅 辅 辅 辅 辅 辅In the case of e), it will be mixed because of smearing. ^ This will be more complex in the smear action [Summary] The purpose of the present invention is to provide a scribe time for recording the body of the syllable. The smear method of the A body is used to reduce the memory. The smear method for a non-volatile memory, the content of each of the memory cells in the basin is 〇; the non-volatile body. The program, the sequence, the content of each memory cell performing a grouping process in the non-volatile memory body is 1; performing memory programming on a plurality of over-scraping memory cells in the flash memory A critical voltage of the memory cell of the segment r is greater than that of the combustion. Excessive smear of mother μ [Embodiment], FIG. 1 is a memory frame according to the present invention ^ ^

Clients Docket No.: 94-〇37 Wood composition. In the picture of brother 1, memory TT s D〇cket No:0492-A40576-TW/finaMDrent 3/2/2006 ^ 1303828 - any memory cell in the area & can be determined by the address line 00~ADD12 . ΓητνΓ Hao Ji, with each memory cell of the scarf, you can right on the address line

can. Less~AiD12 is counted from [0000000000000] to [lllnilnim], that is, 22 is a 3-to-8 multiplexer, receiving address lines ADD13~ADDH, and other knives are not connected to the corresponding gates 24a to 24h Out. Ίρο" ^ Broken F0 F7曰 Another round of the input to the round or the end of the 22 round. Cover _ W. 唬 F0 ~ F7 疋 slave 19 in receiving a verification wipe er # ^ If the verification is passed, set to 0, generally in the = write order or soft programming program, then FG ~ F7 are all set to Fine U II: The end of the 'lion to pick up to - wipe the money to commit the two things touch the New Zealand _, the scale touch output 4 mouth 唬 to 1, making the control signal A 〇 ancient first, recall the segment to the eighth memory All sections. "Electric Μ" is used to select the map. In the process of the smear method of non-volatile memory of one of Niu Erkang, the ==_9 accepts a pre-programmed gamma-) course 0 0 833"5 焉The spear order's make the dynasty of the dynasty in the 19th of the dynasty of the dynasty of the dynasty: the yin and the singer are set to 1. When the memory 19 is accepted by the sorrowful sorrow, the singer of the singer The cell's Sajie write #序4, the potential of each person in the memory 19 = memory cell is less than 〇. Therefore, in the step = to experience = miscellaneous soft programming (wall (four) Qing) program 4 body 19 received a text The potential is pulled up to approximately the potential 〇., σ思, see the memory cell with potential less than 〇

Client's Docket No. :94-037 3/2/2006 TT5s Docket No:0492-A40576-TW/iinaL^rent 1303828 Inr smear method Second start heart; Second critical age is pulled up Critical. When the memory 19 accepts the stenciling process, the memory is low, the cell, and the critical age is pulled by the τ to the part of the gage G. For example, the curve α is more than π, L, and l is lower than the e-house. 〇v, so = soft _ sequence will be over-written multiple memory cells (four) bit to ^ jie electric if_ by the third picture of the smear green, the critical culture of memory cells do not think. At time t1, the memory cell accepts a pre-programming procedure so that the threshold voltage of the memory cell is pulled up by more than a potential. At time β, the memory cell receives-wipe the program, so that the threshold voltage of the memory cell is pulled down. To the potential 〇, but the memory cell has been escaping the lion, so that the pressure is less than the potential of 〇. In order to improve the over-scraping of the memory cell, at time t3, the memory cell is switched to a soft programming program to raise the potential of the memory cell to approximately 〇v. Figure 6 is a flow diagram of an embodiment of a pre-programmed program according to the present invention. In step S60, an un-gr〇Up program is first performed on the memory. Taking the second and third figures as an example, the rewritable signal ERASE and the soft programming signal STPGM are 0 at this time, so the control signals AG~A7 are controlled by the ^: lines ADD13 to ADD15 of the automatic accumulator (7). After the memory 19 receives the anti-grouping program, the automatic accumulator 10 counts the address lines ADD0 to ADD15 one by one for selecting one by one.

Client's Docket No.: 94-037 TT5s Docket No:0492-A40576-TW/finam)rent 3/2/2006 1303828 * -9 memory cells. In the step, verify whether the selected values of the memory cells are g ' ^ Yes, skip to the step, select the next - memory cell verification ===== Bao (10), touch _ again to verify the failure to jump to Step S65. If it is skipped to the step, if # τ 65 65, it is judged that the memory cell is programmed to be the second time n, and if so, the process jumps to the step, _Yes, then the process goes to step S66, and the _ memory cell is programmed again. . In the pre-programming 1 sequence, the address lines ADDQ~ADD15 are used to verify each memory cell one by one until all 5 cells in the memory 19 have completed the pre-programming process. According to the flow chart of the actual _----------- In the step \ 士社 Γ 二 two pairs of memory 19 a grouping process. Taking the second and third diagrams as an example, the 4 rewritable signal ERASE is 1, so that the control letters #uA 〇 〜 A7 are all i, and at the same time, the selection is performed again (step S72), which can only be one at a time. The way in which the memory segment is programmed and erased greatly reduces the time required for erasing. In step S7, the memory 19 performs an anti-grouping process, and uses the address, line 13 to _15 to segment (step S74) 'verify each memory cell in the memory segment: the value is 1 No 1 (step S7”. The verification method of the memory cells in the memory segment is counted one by one by the automatic accumulator 10 for the address lines ADD〇~ADDi2, for selecting each memory cell in the memory segment by time. The bit line of the memory segment is selected for verification, so the readiness during verification can be improved, and it is ensured that it is not interfered by the other seven over-wrenched memory segments. If the ride is verified, jump to the step judgment. Otherwise all the sections have been verified fresh, if yes, the county silk writing program, if not, then jump to step S77. In step S77, the verified memory section will be verified.

Client’s Docket No.: 94-037 3/2/2006 TT5s Docket No:0492-A40576-TW/finaVbrent 1303828 'Cover up and select the next memory segment. Taking Fig. 2 as an example, the 遮 区段 section is verified, and the occlusion signal F 〇 is set to 〇. With the memory segment that causes the verification to pass, it will not be erased again, reducing the excessive scoop 2 shape. In step S75, if the memory segment verification fails, then skip to step j: ϋ19 into the grouping program' and the memory The grammatical area that has not passed the verification in 19 is again subjected to the smear program (step S79), and then jumps back to step S75^ again, until all the memory segments pass the verification. 4A is a flowchart of an embodiment of a finder program according to the present invention. In step S81, an air address program is performed on the memory 19. In the second and third descriptions, the soft programming signal STPGM is i, so that the control signals α〇~α7 both " = all the memory segments are called. In step S82, it is verified whether each of the vocal sections H memory ants have been overwritten, and the cells written by the lining are recorded. In step S83, the memory 19 is subjected to an anti-grouping process. In step =, a soft programming procedure is performed on the over-scraped memory cell, and in the step, the over-scraped memory cell is verified again and judged whether or not the verification is passed (step s. Right all over-transcribed memory cells are verified Pass, Cong programming process depends. If there are still unsuccessful memory cells, skip to the step to record, record the address of the failed cell, and skip to step S84. ~ Although this (4) has been better implemented _ As above, it is intended to limit the scope of the present invention to those skilled in the art, and the scope of protection of the present invention is to be attached to the appended claims without departing from the spirit and scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS [FIG. 1] FIG. 1 is a memory structure diagram according to the present invention. The first embodiment of the automatic accumulator 1G and the parallel control unit 11 according to the present invention. Schematic diagram.

Client's Docket No.:94-037 3/2/2006 TT^ Docket No:0492-A40576-TW/finaVbrent 1303828 Figure 3 is a flow diagram of a smear method for a face-to-face memory. A diagram of the change of the strobe boundary voltage of FIG. 3 is accepted for a memory cell. ~ Method, the memory cell

Fig. 6 is a flow chart of an embodiment according to the present invention. 7 is a flow chart of an embodiment of a smear-writing program according to the present invention. 8 is a flow diagram of an embodiment of a soft programming program in accordance with the present invention. [Description of main component symbols] 10: Automatic accumulator 11: Parallel control unit 12a ' 13a ' 14a ' 16a, 17a · Switching device 15 : Decoder 18a : First memory section A0 to A7 : Control signal 21 : Multiplex 22, 23a~23h ·· or gates 24a~24h: and F0~F7: interrupt signal SM~ perform a pre-programming procedure S33 on the memory to perform a smear program S35~ to the memory Excessive socks write memory to execute a soft programming program

Client's Docket No. :94-037 TTs Docket No:0492-A40576-TW/fiQal/brent 3/2/2006 1303828 Perform an anti-grouping procedure on the meta-memory S61~ Verify whether the content value of the memory cell is 〇S62~Select The next memory cell S63~ performs a programming procedure on the memory cell S64~ Verify whether the memory Langsaki value is 〇S65~ The number of programming times of the memory cell is greater than n? S66~Programming the memory cell again · S71 to the redundant body Perform a grouping process S72~ perform a smear program S73 on the memory~ perform an anti-grouping process S74 on the memory 19~ select a memory segment S75~ verify each memory cell in the memory segment S76~ whether or not all areas The segments have been verified? S77~ 敝 敝 通过 S S S 78 78 78 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 78 78 78 78 78 78 78 78 The memory performs a grouping process S82~ to verify each memory cell in the memory and record the over-storing bit of the memory cell S83~ perform an anti-grouping process on the memory S84~ perform a soft programming on the memory cell of the over-erase Program S85~Verifies the memory cell after performing the soft programming procedure. S86~ Whether all memory cells are verified and passed

Client’s Docket Νο·:94-〇37 3/2/2006 TT^s Docket Ν〇:〇492.Α40576^/^Γ6ηί 12 1303828 " S87~ Recording failed memory cell address

Client’s Docket No·:94-037 TT5s Docket No:0492-A40576>TW/final/brent 3/2/2006 13

Claims (1)

1303828 Case No. 095107157 June 2013 13, Patent Application Range: 1. A smear method suitable for a non-volatile memory, wherein the non-volatile memory has a plurality of memory segments, including: The memory performs a smear writing process; the memory segments in the non-volatile memory that have been erased are verified one by one, and ^ when one of the memory segments fails verification, select f All memory segments in the non-volatile memory that have not been verified together: after entering the program, the memory segment that failed the verification is verified again. 2. The method as described in the scope of the patent application, the non-volatile recording method, wherein each of the memory segments has a plurality of memories, and the memory segments are non-volatile Each of the n address lines of the memory is addressed by the m address lines of the non-volatile memory. Production /: The application of the second paragraph of the patent application scope is applicable to a non-volatile y-strip method, and the m-address material includes x word line and strip 70 line, and each memory area The size of the segment is 2χχ2Μ.                                                    Will be received - positive channel (channelerase) 5. As described in the second paragraph of the patent application, a non-volatile record 14 1303828, ιυ ί, ϋ〇i *> The step of performing a scribe process on the non-volatile memory further includes: selecting all of the memory segments by using the n address lines; and simultaneously performing the smearing process on all of the memory segments. 6. The smear method applicable to a non-volatile memory as described in claim 2, wherein the method further comprises: using an accumulator to select and verify the memory through the address lines. Each memory cell in the body; and when the memory segment passes verification, the memory segment is marked; when - the memory segment has - memory cell verification fails when the memory is & ancient _ Non-Fai & 俨 & 料 料 料 料 料 料 料 料 料 料 料 料 料 料 料 料 料 料 料 料 料 料 料^ Indecent Lr is suitable for the method of smear of non-volatile memory. 1 The non-volatile memory has a plurality of memory cells, including the control unit in the memory segment. The memory segment; the memory execution-de-edit-order, for each-memory::::=:r:r grouping program, the memory of the non-volatile pair of smeared programs, _ Soft programming program ~ ° ° again, for a number of over-smear 8 · For example, the scope of the application of the scope of the application of the scope of the non-volatile 15 1303828 memory smear method, each @ ^ 53 yuan line Group d points. 〃, m segment is a ‘area number of bits. The body ^^ patent applies to the non-volatile memory and other memory segments to execute the sock writing program. When the erroneous writing program is used, at the same time, for all the smearing methods of the memory of the 10th item of the patent range, for the non-volatile control unit to select the writing program, the parallel R is used as the application. ^; Simultaneous smearing procedures. The smear method of the memory is applicable to the non-volatile element simultaneously selecting all of the memory segments - and / 'hand' using the parallel control list 12. The wipe of the 2 body as described in claim 7 Write method, wherein the non-volatile memory non-volatile address line, wherein n address lines are used to address the hard bit lines for addressing the memory cells in the memory segment: ❼又'm The address of the strip ^ I3 · as described in claim 12 of the patent scope: the smear method of the memory, wherein the parallel control unit utilizes: a non-volatile line to select a specific memory segment. Using the η address 14] as in the patent application scope, the smear method of the first item, wherein the anti-grouping program is non-volatile, and the plurality of address lines of the primordial memory are selected == to address the Some of these memory segments. The method of swinging a rabbit memory, in which the non-volatile memory is performed: 乂16 1303828 month: 3⁄4 '·changing ιΐ lama-" The program further includes: when the non-volatile memory accepts the smear After the program, the memory segments are verified; when the memory segment passes the verification, the memory segment is marked, and when the memory segment fails to verify, the non-volatile memory is verified by the mark. The other memory segments outside the memory segment perform the strobe process. 16. The smear method for a non-volatile φ memory as described in claim 7 wherein the pre-programming process comprises the steps of: selecting a memory cell in the non-volatile memory for verification; The memory cell is verified to continue to verify the next memory cell; if the memory cell fails to verify, the memory cell is programmed, and the memory cell is verified a second time; if the memory cell passes the second verification, the verification continues. a memory cell; and if the memory cell fails to verify for the second time, the memory cell is programmed and verified again, wherein if the memory cell verification failure number is greater than a certain value N, the next memory cell is directly verified. 17. The smear method for a non-volatile memory as described in claim 16 wherein the pre-programming procedure is to raise the threshold voltage of each of the memory cells above a predetermined voltage. 18. The smear method for a non-volatile memory as described in claim 7 wherein the smearing process comprises the steps of: performing a smear process on the non-volatile memory; 17 " Replace buy - 1303828 select a memory cell; verify the memory cell; if the memory cell passes, continue to verify the next memory cell; and if the memory cell verification fails, perform the smear process again on the cell Verify the memory cell. 19. The smear method for a non-volatile memory as described in claim 18, further comprising: marking the memory segment when the memory segment passes verification, and when the memory region When there is a memory cell verification failure in the segment, the rewriting process is performed on the other memory segments except the memory segment through which the tag verification passes in the non-volatile memory. 20. The smear method for a non-volatile memory as described in claim 7 wherein the soft programming program comprises the steps of: performing the grouping procedure on the non-volatile memory; the non-volatile memory Verifying all memory cells in the body and recording one or more memory cells that failed to verify; performing the anti-grouping process on the non-volatile memory; performing the soft programming procedure on the memory cells that failed the verification to make the memory cell The threshold voltage is greater than zero; and the memory cells that have passed the soft programming procedure are verified, and one or more memory cells failing to verify are recorded, and the soft programming procedure is performed on the cells again until all memory cells are verified to pass. 21. A non-volatile memory, the non-volatile memory comprising a plurality of memory segments, wherein each memory segment comprises a plurality of switching devices to replace a page with 18 1303828 乂jqf j; independent correction: the memory region The segmentation includes: Solving the Horse. ^^: a plurality of memory cells in the memory segment; ^street address, line, wherein the address line is used to select the two address lines of the memory region coupled to the decoder' for selecting a memory cell of the memory; a 亚, - sub-column processing unit, evenly connecting the spur address line and the control signal for selecting the memory segments, when the control signal is at the first logic level, The parallel processing unit simultaneously selects all the memory segments. When the control #^ number is at the second logic level, the parallel processing unit inputs the address of the address lines to select a portion of the memory segment. :^ A smear method suitable for a non-volatile memory, wherein: 4 non-volatile memory has a plurality of memory segments, each of which has a plurality of memory cells, including: providing a parallel control a unit for selecting the memory segments; performing a pre-programming process on the non-volatile memory, comprising: using the parallel control unit to select and program the memory cells one by one to make the content values of the memory cells Is set to 0; using the parallel control unit to select and verify the memory cells of the non-volatile memory one by one; if the content value of a remote memory selected by the right is not 〇, the selected memory cell is programmed And re-verifying; and when the number of programming of the selected memory cell is greater than a predetermined value, directly selecting the next memory cell for verification; performing a scribe process on the non-volatile memory, including: 19 1303828 rj Simultaneously erasing the memory segments; using the parallel control unit to select and verify the memory cells of the non-volatile memory one by one; ^ if the memory segment In the case where all the memory cells have the content value of Ϊ, the memory segment is marked; when it is verified that the content value of a memory cell is not 〗, for the non-volatile memory, the unmarked memory segment is simultaneously Wiping; and X re-verifying the unmarked memory segment; and • performing a soft programming procedure on a plurality of over-spoken memory cells, including: verifying that each of the memory cells has a critical electric dust that is less than 〇 , if - 疋 ' mark the memory cell; and Bu Xiang the parallel control unit simultaneously raises the threshold voltage of the labeled memory cell to make its threshold voltage greater than 〇. ’ 20