1302428 九、發明說明： 【毛明所屬之技術領域】 一 —^ t本發明係有關於一種電路板嵌埋光電元件之製法，尤 才曰一種將光電元件嵌埋於電路板中之製造方法。 【先前技術】 隨著電子產業的蓬勃發展，電子產品亦逐漸邁入多功 能'局性能的研發方向。為滿足半導體封裝件高積集度 ㈤egratiQn)以及微型化（MiniaturizatiQn)的封裝 f求’提供多數主、被動元件及線路載接之電路板（Clrcuit —亦逐漸由單層板演變成多層板（Multi-layer Board) 〇 半導體技術之發展日新月異，除以往講求外形體積之 二/丑小之封裝外，並且對於f料的儲存容量也逐漸提昇 二：此ΐ外’由於資料的處理量愈來愈大，在相同大 癱現更:Iΐ早位時間内能以最快的速度處理完畢，則能展 即提效率。而提高半導體處理速度最直接的方法 高=:Γ，但在資料傳輸達撕以上時，則面臨 ‘於更古性f、、、、^虎時間延遲、電磁干擾（ΕΜΙ)等瓶頸，對 '直以1:之+導體的製作則愈加困難。尤其傳統以來一 身先^ 為資料訊號傳送之媒介的方式，則受材料本 因此特性的限制，其所能達到的導電性能有限， 口此蝴送的速度難以藉由提高導電性的方式提昇。 易受::雜:=Γ訊號的結構’在傳輸州^^^ 说的干擾心部線路之_干涉，使得訊號在 18760 1302428 傳送過程中因干擾及干涉而造成訊號傳送錯誤的情況， 此訊號傳送的結構必須要有相當的防護措施，以防干 干涉對傳輸訊號產生影響，尤其在高頻傳送中更為明 ^而此種防賴_於電路科料成相#程度的固難度及 韻外的結構料，使得設計成本增加及製造成本提高，故 難以突破現有的狀況。 又傳統訊號傳送的方式係、以電流通過導體的類比式 訊號傳送，而在各電路内部之訊號處理的方式現在多為數 位式處理’而在訊號傳送過程中經過轉換則容易造直 的情況。 /、 、為解決傳統類比式訊號傳輸結構的缺失，新技術係採 用光訊號取代電訊號傳輸方式，最明顯的效果係光訊號幾 Γ不受電磁波的干擾，因此訊號傳送品質較佳，以降低訊 唬傳送犄‘致失真的情況。並且可減少設計防電磁波干擾 的結構，而可降低設計成本及製造成本。故以光作為訊ς •傳送的方式已成為未來發展的方向。 、如第1圖所示之美國專利公告第6,839,476號即為一 j以光作為訊號像送之電路板，係於一底層u上形成有一 :層12於忒芯層12上形成有複數個溝槽i2a，而在該溝 才曰12a内置入一光纖13(〇ptical fiber)，再於該芯層12 上面形成一頂層14,俾以將光纖13埋在芯層12之中，其 中之光纖13係於一纖核13a(core)外包覆纖殼 =Mciadding)。而可在光纖13的兩端裝設光發射 '接收 模組及光被動元件等，以藉由光纖13傳送光訊號，而可免 7 18760 1302428 除電訊號傳送之缺失。 然而該光纖13係埋置在芯層12的溝槽12a卜因此 該芯層12必縣經過開槽製程，然後再將光纖13置入溝 槽心内。而該光纖13置於溝槽12a之製程係為機械置入 的動作’有如習知電路板插裝電子元件之插件動作，因此 製造速度缓慢，而無法達到快速生產的目的。1302428 IX. INSTRUCTIONS: [Technical field to which Mao Ming belongs] - The present invention relates to a method of manufacturing a circuit board embedded with a photovoltaic element, and more particularly to a manufacturing method in which a photovoltaic element is embedded in a circuit board. [Prior Art] With the rapid development of the electronics industry, electronic products have gradually entered the development direction of multi-functional performance. In order to meet the high accumulating degree of semiconductor package (5) egratiQn) and miniaturized (MiniaturizatiQn) package f - 'provide a majority of the main and passive components and circuit-loaded circuit boards (Clrcuit - also gradually evolved from a single-layer board to a multi-layer board (Multi -layer Board) The development of semiconductor technology is changing with each passing day. In addition to the previous two-size/ugly package, the storage capacity of f-materials is gradually increasing. 2: This is because the processing capacity of data is getting bigger and bigger. In the same big 瘫 瘫 : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : 能 能 能 能At the time, it is faced with bottlenecks such as more time f, , , , ^ Tiger time delay, electromagnetic interference (ΕΜΙ), etc. It is more and more difficult for the production of '1: + conductor. Especially since the traditional one The way the signal is transmitted by the medium is limited by the nature of the material, and the conductivity that can be achieved is limited, and the speed at which the butterfly is sent is difficult to increase by improving the conductivity. :: Miscellaneous: = The structure of the signal is transmitted in the transmission state ^^^ Interfering with the interference of the heart line, causing the signal transmission error due to interference and interference during the transmission of the signal 18760 1302428. The structure must have considerable protective measures to prevent the interference of the interference on the transmission signal, especially in the high-frequency transmission, and this kind of anti-reliance _ the degree of difficulty and rhyme structure of the circuit In order to increase the design cost and increase the manufacturing cost, it is difficult to break through the existing situation. The traditional signal transmission method is to transmit the analog signal with current through the conductor, and the signal processing method inside each circuit is now mostly digital. "Processing" and it is easy to straighten after conversion in the signal transmission process. /, , In order to solve the lack of traditional analog signal transmission structure, the new technology uses optical signals instead of electric signal transmission, the most obvious effect is light The signal is not disturbed by electromagnetic waves, so the signal transmission quality is better, so as to reduce the distortion caused by the transmission, and the design can be reduced. The structure of anti-electromagnetic interference can be reduced, and the design cost and manufacturing cost can be reduced. Therefore, the use of light as a means of transmission has become the direction of future development. As shown in Figure 1, US Patent Publication No. 6,839,476 is a The circuit board is provided with light as a signal image, and is formed on a bottom layer u. The layer 12 has a plurality of trenches i2a formed on the core layer 12, and an optical fiber 13 is built in the trench 12a. And a top layer 14 is formed on the core layer 12 to embed the optical fiber 13 in the core layer 12, wherein the optical fiber 13 is attached to a core 13a (core) and covered with a shell (Mciadding). . The optical transmitting 'receiving module and the optical passive component can be installed at both ends of the optical fiber 13 to transmit the optical signal through the optical fiber 13, so that the loss of the transmission signal of the 7 18760 1302428 can be avoided. However, the optical fiber 13 is embedded in the trench 12a of the core layer 12. Therefore, the core layer 12 is subjected to a grooving process, and then the optical fiber 13 is placed in the groove. The process in which the optical fiber 13 is placed in the trench 12a is mechanically inserted. The plug-in operation of the electronic component inserted into the electronic board is slow, and the manufacturing speed is slow, so that the rapid production cannot be achieved.
再者，該光纖13必須依相對應的溝槽…長度先進 行裁切’、然後再將光纖13置於溝槽12a中’使其在製程中 又多一迢加工製程，因而增加製作的困難度；且光纖13 的長度不…故增加製程分類的複雜度’使得整體的製程 增加，複雜度提高，相對地即增加製造成本。 而在芯層12上形成溝槽丨2a再置入光纖丨3，於尺寸 设计上因溝槽12a與溝槽i 2a之間必須保持相當的間隔， =可將光纖13定位在芯層12中’而間隔大小即影響佈線 密度，並且佈線密度受到光纖13線徑大小的 法達到高密度佈線之目的。 此播 此外，該用以傳導光訊號的光纖13係於—纖核Ha 外包覆纖殼13b，而可藉由包覆在纖核13a外面的纖殼 内層作為反射面，使光訊號藉由纖殼13b内層不斷向前反 射以達傳送訊號的目的。而該光纖13與電路板係為不同的 製程結構’故必須以另外的獨立製程製作，同樣會增加製 程整體的困難度’且整合兩種不同製程的產品即增加困難 度’而無法達到大量生產以降低製程成本的目的。 由於該光纖13必須埋置在芯層！ 2中，因而增加製作 18760 8 1302428 的0難度，亚且無法達到高密度佈線之使用需求 業界所欲解決之課題。 &a 因此，如何提供_ μ 、、 種付5電子裝置輕薄短小需求、 減^fU虎傳遞相失、缩短導電路徑、減少雜訊等問題，以 及提升光電訊號傳輸品皙、雜 、 簡化W程、降低製程難度、接 升佈線密度、及提升量盡M ^ 之光笔路板谈埋光電元件之, 法，實為目前業界亟欲解決的課題。 衣 【發明内容】 § 签於習知技術的缺失，太 本i明之主要目的，係在提供 一種電路板嵌埋光電元件 斤 小需求。 衣法，以付合電子裝置輕薄短 • 本發明之另一目的，係力担w 從㊉ 件之f法，係在棱供一種電路板嵌埋光電元 •、…二t 號傳輸路徑以降低訊號傳遞失直， 亚減乂‘讯及提升光電訊號傳輸品質。 #之2 $之X目的’係在提供—種電路板嵌埋光電元 瞻件之製法，得以提升佈線密度。 ^ 本發明之又一目的，係 件之製法，得以提并+攸4 種电路板肷埋先電元 、、 钕升包路板之散熱效果。 為達上揭及其他目的，本發明之雷路杯$拖也+ 之製法，包括H目士 板欣埋先電元件 今承载拓 /、 /、有至少二貫穿開口之承載板；於 。亥承載板之開口内分別置入 於 第一及第二光電元件 h兀件’而該 非作用面，且今作用面面及與作用面相對應之 承載板表面、第 數電極墊及光作· 弟一先电兀件之作用面上形成—介電 18760 9 1302428 層且》玄介電層中形成有多數用以露出該第 元件之電極塾的開孔，以及用於露出 ^先電 件之光作用區之開口；以及於該介電層表面=二=電元 層，且在該介電芦 面形成一線路 第一及楚中形成導電結構而電性連接至該 弟及乐一光電元件之電極墊。 人 層之;二:二第二光電元件之光作用區係對應於該介電 敕八丰^構成符合電子裝置輕薄短小需求之光電 整合丰導體裝置。 向 ^述忒；1電層及該線路層表面復形成有一係如防文曰 ^之絕緣保護層，以保護覆蓋 〒 緣俘婼爲主r Γ <、、汞路層。再於該絕 、”〜層表面形成有至少一光傳導件，且兮 少一端係位於令m門 千且。玄先傳導件之至 端传且右5層_開口之頂端’且該光傳導件之-形成有^―先反射面。又該料層及該㈣導件表面 該光傳導件傳逆^使心一及弟二光電元件之間得藉由 的干样，〜ί 而可降低訊號傳遞損失及減少雜訊 ^亚得以提升光電訊號傳輸品質。 復妒成有I月之3貝施例中，該介電層及該線路層表面 路增ΐ:構：::線路層電性連接之線路增層結構，且該線 有 ^及弟一先电兀件之光作用區形成 外⑼以露出該第—及第二光電元件之光作用區。此 於該防構外表面復形成有-絕緣保護層，… 之至丨一运又奴形成有至少一光傳導件，且該光傳導件 僂道Γ 一端係位㈣線路增層結構之開口的頂端，又該光 之—端係具有至少一光反射面，使該第一及第二光 18760 10 1302428 電2之光作用區對應該光傳導件之 訊號傳送。 评以進仃 另外，本發明之線路層表面直接形成 件，而無須額外形成置入該光傳導件之溝槽 線之密度。 及生產成本’ _升線路佈 此外，該承載板之底面復形成 :熱板將該苐-及苐二光電元件運作時產生的二= 之製法的散熱絲俾可心本發明之電路板嵌埋光電元件 【實施方式】 式，由㈣的具體實施例說明本發明之實施方 瞭解二：：之人士可由本說明書所揭示之内容輕易地 余解柄明之其他優點與功效。本發明亦可藉由豆 = 應用，本說明書中的各項細節: 種修飾與變技應用，在不恃離本發明之精神下進行各 載柘ί發Γ之主要特徵在於將多數光電元件置入於-承 成介=靖之後於該承載板及該些光電元件之作用面形 線路層，藉以形成一嵌埋有光電元件之電路板 : 以承載板係為金屬板、m、絕緣板之盆中 圖示及=為例如雙層或多層線路之有機電路板，為簡化 板及^ 以下即叫承載板為金屬板、陶·、絕緣 板之其中一者為例進行説明，但並非以此限制本 18760 11 1302428 發明之範圍。 [弟一實施例]Moreover, the optical fiber 13 must be cut according to the length of the corresponding groove... and then the optical fiber 13 is placed in the groove 12a to make it one more processing process in the process, thereby increasing the difficulty of fabrication. And the length of the optical fiber 13 is not... so the complexity of the process classification is increased', so that the overall process is increased, the complexity is increased, and the manufacturing cost is relatively increased. The trench 丨2a is formed on the core layer 12 and then placed in the fiber 丨3. The size of the trench 12a and the trench i 2a must be kept at a considerable interval. The optical fiber 13 can be positioned in the core layer 12. 'The size of the interval affects the wiring density, and the wiring density is achieved by the method of the wire diameter of the fiber 13 to achieve high-density wiring. In addition, the optical fiber 13 for conducting the optical signal is attached to the outer casing 13b of the fiber core Ha, and the optical fiber can be used as a reflecting surface by the inner layer of the outer casing of the outer core 13a. The inner layer of the shell 13b is continuously reflected forward for the purpose of transmitting signals. The optical fiber 13 and the circuit board have different process structures, so it must be manufactured in another independent process, which also increases the overall difficulty of the process, and integrates two different processes, that is, increases the difficulty, and cannot achieve mass production. To reduce the cost of the process. Since the fiber 13 must be embedded in the core layer! 2, thus increasing the difficulty of making 18760 8 1302428, and can not meet the needs of the industry to solve the problem of high-density wiring. &a Therefore, how to provide _μ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The process of reducing the difficulty of the process, increasing the wiring density, and increasing the amount of light to the buried light-emitting components, is a topic that the industry is currently trying to solve. Clothing [Summary] § Signed in the lack of conventional technology, the main purpose of Taiben i Ming is to provide a small embedded circuit optoelectronic component. The clothing method is to make the electronic device light and thin. • Another object of the present invention is to load the ten-piece f method, and to provide a circuit board for embedding the photocells, ... The signal transmission is not straight, the sub-reduction and the improvement of the optical signal transmission quality. #之2 $X's purpose is to provide a method for embedding a photocell with a printed circuit board to improve the wiring density. ^ Another object of the invention is that the method of the system can be combined with the heat dissipation effect of the four types of circuit boards, the buried electric cells, and the so-called clad board. In order to achieve the above and other purposes, the method of the invention of the Leyue Cup $ dragging method of the present invention includes the H-Shiban plate buried electrical component, the current carrying extension /, /, having at least two through-opening carrier plates; The openings of the first carrier plate are respectively placed in the first and second photovoltaic elements, and the non-active surface, and the active surface and the surface of the carrier plate corresponding to the active surface, the first electrode pad and the light a first dielectric layer is formed on the active surface of the dielectric layer 18760 9 1302428 and a plurality of openings are formed in the dielectric layer to expose the electrode of the first component, and light for exposing the first component An opening of the active region; and a surface of the dielectric layer=two=element layer, and forming a conductive structure on the first surface of the dielectric surface and electrically connecting to the optical component of the Electrode pad. The second layer of the second optoelectronic component corresponds to the dielectric 敕 八 丰 ^ to form an optoelectronic integrated conductor device that meets the light and short requirements of the electronic device. To the surface of the electrical layer and the surface of the circuit layer, an insulating protective layer such as an anti-textile layer is formed to protect the covering edge of the crucible, which is mainly r Γ <, a mercury road layer. Further, at least one light-conducting member is formed on the surface of the layer, and the end portion of the layer is located at a distance of m gates. The front end of the mysterious conductor is transmitted to the end and the top 5 layer is the top end of the opening and the light is conducted. The first reflection surface is formed, and the surface of the material layer and the surface of the (four) guide member are reversed to make a dry sample between the core and the second photoelectric element, The signal transmission loss and the reduction of noise can improve the transmission quality of the photoelectric signal. In the case of the 3th embodiment of the I month, the dielectric layer and the surface layer of the circuit layer are increased: structure::: circuit layer electrical properties Connecting the line build-up structure, and the light-active area of the first and second electric wires is formed outside (9) to expose the light-acting regions of the first and second photovoltaic elements. - an insulating protective layer, ... which is formed by at least one light-conducting member, and the end of the opening of the light-transmitting member 偻 ( (4) the top end of the opening of the line-increasing structure, and the light-end system has At least one light reflecting surface, the first and second light 18760 10 1302428 electric 2 light action area corresponds to light transmission In addition, the surface layer of the present invention is directly formed on the surface without the need to additionally form the density of the groove lines placed in the light-conducting member. And the production cost ' _ liter wiring cloth, the bearing The bottom surface of the board is formed: the heat sink is used to embed the heat-dissipating wire of the method of the second and second photovoltaic elements, and the circuit board of the invention is embedded with the photoelectric element [embodiment], by (4) The embodiments of the present invention can be easily understood by those skilled in the art from the disclosure of the present specification. The present invention can also be applied by beans = application, details in this specification: And the application of the invention, the main feature of the invention is that the majority of the photovoltaic elements are placed in the carrier board and the photovoltaic elements after the completion of the invention. The action of the planar circuit layer, thereby forming a circuit board embedded with the photovoltaic element: the carrier plate is a metal plate, m, the plate of the insulation plate is shown in the figure and the organic circuit board is, for example, a double layer or a multilayer circuit In order to simplify the board and the following, the carrier board is described as one of a metal plate, a ceramic plate, and an insulating plate, but the scope of the invention is not limited thereto. [First embodiment]
請參閱第2A圖至第2F 電元件之製法之剖視示意圖。知為本發明電路板嵌埋光 百先請參閱第2A圖，提供—且 21〇、叫之承載板2〗，而：二至少二貫穿開口 板、絕緣板或有機電路板其中L者^系為金屬板、陶莞 板其中之—者==板係為印刷電路板或Ic封裝基 有，&邊承载板21之開口 =、第二光電元件22a，22b，並於另 为別班置入一第 導體元件24，其置入方法得於該承載板二11二入一半 的=或可撕除的膠帶，再將該;:=電-： 二置於該開口内’之後再將該支 内心除，此為習知之技術而非本案之主要技術 内谷所在，故於此不再為文贅述。 221 7= 一及第二光電元件仏篇均具有一作用面 2la、22!b及與作用面相對應之非作用面^、挪，且 以作用面221a、221b具有光作用區22知、22儿及多數電 極墊224a、224b ·’又該半導體元件24具有一作用面2乜 及與作用面相對之非作用面24b ’於該作用面W具有多 书極上241且5亥第一光電元件22a與該第二光電元件 db係為光主動元件以及光被動元件其中之一者，其中該 光主動元件係包括雷射二極體（laser di〇de，LD)、發光 一4亟體（1 lght emitting diode , LED)或垂直共振腔面射型 12 18760 1302428 雷射一極體（vertical cavity surface emitting laser， VCSEL)，而該光被動元件係包括光二極體或光感測元件。 ， 請參閱第2B圖，接著於該承載板21表面、第一、第 -二光電元件22a，22b及半導體元件24之作用面221a、 221b、24a上形成一介電層23,且該介電層23中形成有多 數用以露出該第一、第二光電元件22a，22t)及半導體元件 24之電極墊224a、224b、241的開孔230，以及用於露出 馨該第一及第二光電元件22a，22b之光作用區223a、223 b 之開口 231。於本實施例中，該介電層23係為FR-4樹脂、 FR-5樹脂、環氧樹脂（Ep〇xy)、聚酯樹脂（p〇lyesters)、 氰月曰（Cyanate ester)、聚乙醯胺（p〇iy imide)、雙順丁埽 一酉夂fe亞胺/二氮阱（BT，Blsmaieimide化丨犯丨此）或混合 環氧樹脂玻、璃纖維（Glass flber)等絕緣性材料製成。 、請參閱第2C圖，然後於該介電層23表面形成一線路 層25，且在该介電層23之開孔230中形成導電結構251 馨而電性連接至該第—、第三光電元件取咖&半導體元 件24之電極塾22牦、22413、241。而在介電層23表面形 成線路層之技藝種類繁多，且為業界所習知，故在此不再 贅述。 又於緣力電層23及線路層25表 晴參閱第2D圖 復形成有一絕緣保護層26，以保護覆蓋於其下之線| 25丄並形成有開口 262以露出該第—光電元件仏及〜 光電元件22b之光作用區223a、223b。 請參閱»2E@，然後於該絕緣保護層26上形成; 18760 13 1302428 光傳導件27，該光傳導件27係例如光導波管，其係由一 核心層271表面形成披覆層272而成，其中光訊號在該核 心層271中傳遞的折射率大於其在該披覆層272中的折射 率；且該光傳導件27至少一端具有一用以反射被傳輸之 光汛號的反射面273 ’而該反射面273係位於該開口 262 頂端，該反射面以45。為最佳，以使光訊號直接通過該核 心層271進行傳輸而不至於在該核心層271與該披覆層 272交界處多次反射而引起傳輸距離增大及光損耗。於本 實施例中，該光傳導件27兩端各具有一 45。之反射面 273,且各反射面273係與該第一及第二光電元件22a，22b 之光作用區223a、223b相對應之開口 262的頂端，以分別 與該第一光電元件22a及該第二光電元件22b之光作用區 223a、223b相對，使該第一光電元件22a與第二光電元件 2 2 b之間得以進行光讯號的傳遞。由於該第一及第二光電 元件22a，22b係透過該光傳導件27直接進行光訊號之傳輸 與接收，俾可縮短訊號傳輸之路徑、進而可減少訊號傳輸 過程的損失，以提高訊號傳輸品質。Please refer to the schematic diagram of the manufacturing method of the 2A to 2F electrical components. Knowing that the circuit board embedded in the invention is light, please refer to Figure 2A, providing - and 21 〇, called the carrier board 2 〗, and: at least two through the opening plate, the insulating board or the organic circuit board For the metal plate, the ceramic plate, the == plate is printed circuit board or Ic package base, & side carrier plate 21 opening =, second optoelectronic components 22a, 22b, and other Into a first conductor element 24, the method of placing it is obtained by the carrier board 2 11 half of the = or tearable tape, and then; = = electricity -: two placed in the opening 'after In addition to the heart, this is the technology of the prior art and not the main technology of the case, so it is no longer a text. 221 7= Both the first and second optoelectronic components have an active surface 2la, 22!b and an inactive surface corresponding to the active surface, and the active surface 221a, 221b has a light-applying area 22, 22 And the plurality of electrode pads 224a, 224b' and the semiconductor element 24 have an active surface 2A and an inactive surface 24b' opposite to the active surface. The active surface W has a plurality of gates 241 and 5H of the first photovoltaic element 22a and The second optoelectronic component db is one of a light active component and a light passive component, wherein the optical active component comprises a laser diode (LD), a light-emitting body (1 lght) Diode, LED) or vertical cavity surface type 12 18760 1302428 vertical cavity surface emitting laser (VCSEL), and the light passive component includes a photodiode or a light sensing element. Referring to FIG. 2B, a dielectric layer 23 is formed on the surface of the carrier 21, the first and second optoelectronic components 22a, 22b, and the active faces 221a, 221b, and 24a of the semiconductor device 24, and the dielectric is formed. A plurality of openings 230 are formed in the layer 23 for exposing the first and second photovoltaic elements 22a, 22t) and the electrode pads 224a, 224b, 241 of the semiconductor device 24, and for exposing the first and second photovoltaics The openings 231 of the light-applying regions 223a, 223b of the elements 22a, 22b. In this embodiment, the dielectric layer 23 is FR-4 resin, FR-5 resin, epoxy resin (Ep〇xy), polyester resin (p〇lyesters), Cyanate ester, poly Insulating properties such as acetaminophen (p〇iy imide), biscision oxime, fluorene imine/diazide trap (BT, Blsmaieimide 丨 丨) or mixed epoxy glass, glass flesh Made of materials. Referring to FIG. 2C, a circuit layer 25 is formed on the surface of the dielectric layer 23, and a conductive structure 251 is formed in the opening 230 of the dielectric layer 23 to be electrically and electrically connected to the first and third photoelectric layers. The components take the electrodes 塾22牦, 22413, 241 of the semiconductor element 24. The art of forming a wiring layer on the surface of the dielectric layer 23 is various and is well known in the art, and therefore will not be described herein. Further, in the edge layer 23 and the wiring layer 25, an insulating protective layer 26 is formed on the second layer to protect the underlying layer 25 25 and is formed with an opening 262 to expose the first photovoltaic element. ~ Light-acting regions 223a, 223b of the photo-electric element 22b. Please refer to »2E@, and then formed on the insulating protective layer 26; 18760 13 1302428 The light conducting member 27 is, for example, an optical waveguide, which is formed by forming a coating layer 272 on the surface of a core layer 271. Wherein the optical signal transmits a refractive index in the core layer 271 that is greater than its refractive index in the cladding layer 272; and the light-conducting member 27 has at least one end having a reflective surface 273 for reflecting the transmitted optical signal. And the reflecting surface 273 is located at the top end of the opening 262, and the reflecting surface is 45. Preferably, the optical signal is transmitted directly through the core layer 271 without being reflected multiple times at the boundary between the core layer 271 and the cladding layer 272 to cause an increase in transmission distance and optical loss. In the embodiment, the light guiding member 27 has a 45 at each end. a reflecting surface 273, and each reflecting surface 273 is a top end of the opening 262 corresponding to the light-applying regions 223a, 223b of the first and second photovoltaic elements 22a, 22b, and the first photovoltaic element 22a and the first The light-applying regions 223a and 223b of the two photovoltaic elements 22b are opposed to each other to enable transmission of optical signals between the first photovoltaic element 22a and the second photovoltaic element 2 2 b. Since the first and second optoelectronic components 22a, 22b directly transmit and receive optical signals through the optical waveguide 27, the path of the signal transmission can be shortened, thereby reducing the loss of the signal transmission process, thereby improving the signal transmission quality. .
請麥閱第2F及2F 圆 ^ 又該光傳導件27以及該絕辱 !護層26上復可形成-封裝膠體28或金屬殼體28，之保 ，罩’用以保護該光傳導件27避免其受外在因素之影響6 扣壞，俾以提高產品使用壽命。 另5玄貝穿介電層2 3及絕緣伴確爲9 β 豕1示邊層26之開口 231，262 中填入有導光材料（圖式中未表示）卷 ^ 外界雜訊的干擾。- 18760 14 1302428 [第二實施例] 如第3A及3B圖所示，俜為太 n 製法之楚一奋_ ίτ'為本發明電路板嵌埋光電元 件之製法之 奋 〜、,4、 社▲乐一貝施例之剖視示意圖。 月二閱弟3A圖’传弁接征 屬板、陶营知、先鍉（、一另一承载板29其可為金 之疊合結槎，t由 反，或為上述所組群組 基板其中之一者。 乃p刷電路板或1C封裝 前述:ί:载板29上形成上述之承載板2卜之後即接續 …料載板21之開H2ii内嵌 成介二rr22b及半導體元件… 等。心截 、絕緣保護層26及光傳導件27 ^第騎，板29若為金屬板或陶W可進行散熱，以避 損掠.若\—千先電兀件仏，2213及半導體元件24過熱造成 谓农，右為電路板則可用以增加電性功能。Please read the 2F and 2F rounds, and the light-transmitting member 27 and the insulting layer 26 can be formed on the encapsulant 28 or the metal casing 28, and the cover is used to protect the light-conducting member 27. Avoid being affected by external factors. 6 Defectively, to improve product life. The other 5 Xuanbei through the dielectric layer 2 3 and the insulation accompanying the 9 β 豕 1 shows the opening of the edge layer 26 231, 262 filled with light-conducting material (not shown in the figure) volume ^ external noise interference. - 18760 14 1302428 [Second embodiment] As shown in Figs. 3A and 3B, Chu Yifu is a method of the method of embedding the photovoltaic element of the circuit board of the present invention, and 4, ▲ Schematic diagram of the Le Yibei example. On the second day of the second month, the 3A picture of the brothers, the 弁 弁 属 、 、 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 陶 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 One of them is a brush circuit board or a 1C package. The following: ί: The carrier board 2 is formed on the carrier board 2, and then the carrier board 21 is opened. The H2ii is embedded in the second rr22b and the semiconductor component. The core cut, the insulating protective layer 26 and the light-conducting member 27 ^ ride, if the plate 29 is a metal plate or a ceramic W, heat can be dissipated to avoid damage. If the \ - thousand electric components, 2213 and the semiconductor component 24 Overheating causes the farmer, and the right board is used to increase the electrical function.
2閱第3B圖，另得於該第—、第二b光電MU 之非作用自222a、222b’ α及半導體元件Μ之非作用面 直接接置—用以散熱之金屬塊挪，同樣得藉由該金屬 塊29a進行散熱。 [第三實施例] 如第4A圖至第4D圖所示者，係為本發明電路板嵌埋 光電元件之製法第二實施例示意圖，本實施例與前述第一 實施例大致相同，惟本實施例中復包括一線路增層結構。 如圖所示，本實施例係侬據實際電性設計需要而二；介電 層23及線路層25上進行線路增層製程以形成一線路增^ 18760 15 1302428 結構31，並令該線路增層結構31電性連接至該線路；25。 请蒼閱第4A圖，首先提供一係如散熱板之承載板仏 於為承載板29上絲成前述之承載板2卜再於該承載板 21之開口 210、211内分別置入有一第一、第二光電元件 22a，22b及半導體元件24。 請苓閱第4B圖，接著於該承載板21表面、第一、 二光電元件221221:及半導體元件24之作用面221。 221b、24a上形成一介電層23,且該介電層23中形成有多 數用以露出該第-、第二光電元件22a，22b及半導體元件 24之電極整224a、224b、241的開孔23〇，以及用於露出 該第一及第二光電元件22a，22b之光作用區223&、22补 之開口 231，然後於該介電層23表面形成一線路層25，且 在6亥；1電層23之開孔230中形成導電結構251而電性連接 至該第一、第二光電元件22a，22b及半導體元件24之電極 墊 224a 、 224b 、 241 。 • 請參閱第4C圓，之後於該介電層23及線路層25表 面形成一線路增層結構31，其製作方法係為成熟之技術， 於此不再贅述，且該線路增層結構31係電性連接至該線路 層25。而該線路增層結構μ係至少包括··介電層311，疊 置於該介電層311上之線路層312，以及形成於該介電層 311中係如導電盲孔之導電結構313，又該導電結構313 電性連接至該線路層25，同時該線路增層結構31中對應 遠第一及第二光電元件之光作用區223a、22 3b形成有開口 31a、31b，使該第一及第二光電元件之光作用區223a、223b 16 18760 1302428 分別露出·，又於該線路增層結構31最外層之表面復形成 有一絕緣保護層26,以保護覆蓋於其下之線路層25，並形 成有開口 262以露出該第一光電元件223及第二光電元件 22b之光作用區223a、223b。 請參閱第4D及4D’圖，最後於該絕緣保護層26上形 成有一係如光導波管之光傳導件27 5且該光傳導件27之 兩端係分別位於該開口 31a、3lb之頂端，並使兩端之反射 _面273分別與该第一及第二光電元件之光作用區μ%、 M3b相對，進而使該第一及第二光電元件2%，2孔可藉由 该光傳導件27直接進行光訊號之傳輸與接收；接著於該 絕緣保護層26及光傳導件27表面形成一係如封裝膠體 或金屬殼體28,之保護罩，藉以保護該光傳導件27避免直 受外在因素之影響而損壞，俾以提高產品使用壽命。, 另該貫穿介電層23、線路增層結構31及絕緣保護層 2 6之開口 2 31，31 a，2 6 2中填入有導光材料（圖式中未表又示曰) 春或抽成真空，藉以降低外界雜訊的干擾。 [弟四貫施例] 一如第5A圖及5B圖所示者，係為本發明電路板嵌埋光 电70件之製法之光傳導件之不同實施例示意圖。各實施例 之製法與該前述第一實施例大致相同，惟該絕緣保護層表 面形成複數個不同結構之光傳導件，藉以作不同路徑:訊 號傳輸。 如第5Α圖所示者，係於該絕緣保護層26之表面形成 複數個光傳導件32及33，且該光傳導件32、33之至少一 18760 17 1302428 &具句反射面32a、33a’其中該光傳導件32兩端之反射 223a、223b相對應之開口 23丨的頂端，而另一光傳導件33 之反射面33a同位於該第-光電元件22a之光作用區心 相對應之開口 231的頂端。因此，該第一光電元件…同 時對應兩個反射面32a、33a，可以同時接收來自兩個該光 傳導件32、33之光訊號，或者同時發送光訊號至兩個光傳 導件3 2、3 3之光訊號。俾實現訊號多點傳送，俾以增強光 訊號之傳輸及處理能力。 曰 一復於該承載板21之開口 211中接置有至少—半導體 兀件24’而該半導體元件24具有多數電極墊24ι，且使該 線路層25中的導電結構251電性連接至該半導體元件24 之電極塾241。 如第5B圖所示者’係於該絕緣保護層26之表面形成 複數個光傳導件34、35、36，而該些光傳導件34、35、36 籲之一端具有至少一反射面34a、35a、3^。 該光傳導件34、35之反射面34a、35a係相對於第一 光電元件22a之光作用區223a，又該光傳導件34之另一 反射面34a及另一光傳導件36之反射面36a係相對於該第 二光電元件22b之光作用區223b，使該第一及第二光電元 件22a，22b之間可透過光傳導件34進行傳送，又該第一及 第二光電元件22a，22b則可分別藉由光傳導件35及36而 與其他光電兀件進行光訊號之通訊，藉以提升電路板之電 性能。 甩 18 18760 1302428 復於該承載板21之開口 211中接置有至少一半導體 元件24，而該半導體元件24具有多數電極墊241，且使^玄 線路層25中的導電結構251電性連接至該半導體元件 之電極墊2 41。 [第五實施例] i如第6A圖及6C圖所示者，係為本發明電路板喪埋光 u件之製法之不同實施例示意圖。與前述各實施例製法 大致相同，惟該介電層及線路層表面係壓合光傳導件底層 =披覆層，而藉由該彼覆層取代上述各實施例之絕緣保^ 層。 如第6A及6B圖所示者，該光傳導件27底面且有一 =積之披覆層272，且該心層271之兩端形成有反射 面273，並於該核心層271頂面形成另一披覆層奶，；使 1光傳導件27底面之彼覆層272形成在該介電層23及潮 層25表面，藉以保護介電層23表面之線路層巧，且言 光傳導件27之反射面273係位於該介電㉟23《開口 23] 以對應該第-及第二光電㈣如篇之光作用違 223a，223b。 請參閱第6C及6C，圖，又該光傳導件27以及位於最 =層之披覆層272上復可形成一封裝膠體，或金屬殼體 之保護罩’用以保護該光傳導件27避免其受外在因幸 之影響而損壞’俾以提高產品使用壽命。 ^貫穿、介電層23之開σ 231中填入有導光材料（圖 、表不）或抽成真空，藉以降低外界雜訊的干擾。 18760 19 1302428 於該承裁板埋光電元件之製法，主要係 -及第二光f元件之作用面二光電元件，且該第 於該承载板表面多數電極塾及光作用區， 層’且該介電層中形成有多數2::::::.成-介電 光作用區之開口，並於該介° 及弟^光電元件 光電元件之電極墊連接-及第二 性連接至該光收發元件之連==吏3路層得直接電 元件之光作用區對應於該介電層，二：一及第二々光電 子衣置輕潯短小需求之光電整合半導體裝置。 -光傳導侏本^明之線路層表面復可形成一防焊層及至少 声及核、、/ Γ玄線路層表面直接形成光傳導件之彼覆 該光傳導件之溝槽 /成置入 時可提升線路佈線之密度 難度’同 • I·生二i!明之包路板嵌埋光電元件之製法可依據實際 /又5十兩要於該介電層及該線路層上進行線路增層製程 =形成-線路增層結構，以滿足電子產品性能不斷提升之 需求。 以及，本發明中，該承載板之底面復形成有散熱板， 以便透過該散熱板將該第一及第二光電元件運作時產生的 熱量及時進行散熱，俾可增強本發明之電路板嵌埋光電元 件之製法的散熱效果；或可在承載板底面形成電路板藉以 增加電性功能。 9 18760 20 1302428 "上述實施例僅為例示性說明本發明之原理及直功 双，而非用於限制本發明。任何孰 方 土 … 此項技蟄之人士均可 在不延背本發明之精神及範疇下， 盥蠻仆 m .l , . +上述，'轭例進行修飾 直4丨口此，本發明之權利保護範圍，應如後述之” 專利範圍所列。 文、义甲明 【圖式簡單說明】 圖；第1圖係為美國專利公告第U39, 476號之剖面示意 第 '圖至第㈣係為本發明電路板嵌埋光電元件之 衣在弟一貫施例之剖面示意圖； f 2F，圖係為第2F圖之另-實施例之剖面示意圖； 第3A圖及第3B圖係為本發明雷改^山 制 4〜a电路板肷埋光電元件之 衣法乐一貫施例接置有散熱結構之剖面示意圖； 制第4A圖至第4D圖係為本發明電路板嵌埋光電元件之 衣法第二實施例之剖面示意圖； · = 4D，圖係為第4D圖之第三實施例之剖面示意圖； ,罘5A圖及第5B圖係為本發明電路板嵌埋光電元件之 敁法接置多數光傳導件之第四實施例剖面示意圖； —第6A圖至第6C圖係為本發明電路板嵌埋光電元件之 第五實施例剖面示意圖；以及 第6C’圖係為第6C圖之另一實施例剖面示意圖 【主要元件符號說明】 1 底層 2 芯層 18760 1302428 12a 溝槽 13 光纖. 13a 纖核 13b 纖殼 14 頂層 2卜29 承載板 210 、 211 、231、262、31a、31b 開口 221a、221b、24a 作用面 222a、222b、24b 非作用面 223a、223b 光作用區 224a、224b、241 電極墊 22a 第一光電元件 22b 第二光電元件 23、311 介電層 230 開孔 24 半導體元件 25 、 312 線路層 251 、 313 導電結構 26 絕緣保護層 27、32、33、34、35、36 光傳導件 271 核心層 272、 272’披覆層 273、 32a、33a、34a、35a、36a 反射面 28 封裝膠體 22 18760 1302428 28， 金屬殼體 29a 金屬塊 31 線路增層結構2 See Fig. 3B, and the non-acting surfaces of the first and second b-photoelectric MUs are directly connected from the non-active surfaces of the semiconductor elements — - the metal block for heat dissipation is also borrowed. The heat is dissipated by the metal block 29a. [Third Embodiment] As shown in Figs. 4A to 4D, it is a schematic view of a second embodiment of a method for fabricating a photovoltaic element embedded in a circuit board of the present invention. This embodiment is substantially the same as the first embodiment described above, but only The embodiment further includes a line build-up structure. As shown in the figure, the present embodiment is based on the actual electrical design requirements; the dielectric layer 23 and the circuit layer 25 are subjected to a line build-up process to form a line increase 1876015 1302428 structure 31, and the line is increased. The layer structure 31 is electrically connected to the line; Please refer to FIG. 4A. Firstly, a carrier board such as a heat sink is provided, and the carrier board 2 is wound on the carrier board 29, and then a first one is placed in the openings 210 and 211 of the carrier board 21, respectively. The second photovoltaic elements 22a, 22b and the semiconductor element 24. Please refer to FIG. 4B, and then to the surface of the carrier 21, the first and second optoelectronic components 221221: and the active surface 221 of the semiconductor component 24. A dielectric layer 23 is formed on 221b, 24a, and a plurality of openings are formed in the dielectric layer 23 for exposing the first and second photovoltaic elements 22a, 22b and the electrode elements 224a, 224b, 241 of the semiconductor element 24. 23〇, and the light-acting regions 223 & 22 for exposing the first and second photovoltaic elements 22a, 22b complement the opening 231, and then forming a wiring layer 25 on the surface of the dielectric layer 23, and at 6 hai; A conductive structure 251 is formed in the opening 230 of the electrical layer 23 and electrically connected to the first and second photovoltaic elements 22a, 22b and the electrode pads 224a, 224b, 241 of the semiconductor element 24. • Referring to the 4C circle, a line build-up structure 31 is formed on the surface of the dielectric layer 23 and the circuit layer 25. The fabrication method is a mature technology, which will not be described again, and the line build-up structure 31 is Electrically connected to the circuit layer 25. The line build-up structure μ includes at least a dielectric layer 311, a circuit layer 312 stacked on the dielectric layer 311, and a conductive structure 313 formed in the dielectric layer 311, such as a conductive via. The conductive structure 313 is electrically connected to the circuit layer 25, and the light-acting regions 223a and 22b of the line-generating structure 31 corresponding to the far first and second photovoltaic elements are formed with openings 31a, 31b, so that the first And the light-acting regions 223a, 223b 16 18760 1302428 of the second photovoltaic element are respectively exposed, and an insulating protective layer 26 is further formed on the surface of the outermost layer of the wiring build-up structure 31 to protect the circuit layer 25 covering the bottom layer. An opening 262 is formed to expose the photo-active regions 223a, 223b of the first photovoltaic element 223 and the second photovoltaic element 22b. Referring to FIGS. 4D and 4D', finally, a light conducting member 27 5 such as an optical waveguide is formed on the insulating protective layer 26, and both ends of the optical conducting member 27 are respectively located at the top of the openings 31a, 31b. And the reflection surface 273 of the two ends is opposite to the light application regions μ% and M3b of the first and second photoelectric elements, respectively, so that the first and second photovoltaic elements 2%, 2 holes can be guided by the light The component 27 directly performs transmission and reception of the optical signal; then, a protective cover such as an encapsulant or a metal casing 28 is formed on the surface of the insulating protective layer 26 and the optical conducting member 27, thereby protecting the optical conducting member 27 from direct interference. Damage caused by external factors, to improve product life. And the opening 2 31, 31 a, 2 6 2 of the through dielectric layer 23, the line build-up structure 31 and the insulating protective layer 26 are filled with a light guiding material (not shown in the figure) spring or Vacuum is drawn to reduce the interference of external noise. [Middle Example] As shown in Figs. 5A and 5B, it is a schematic diagram of different embodiments of the light-transmitting member of the method for embedding photovoltaic device 70 in the circuit board of the present invention. The manufacturing method of each embodiment is substantially the same as that of the first embodiment described above, except that the surface of the insulating protective layer forms a plurality of optical conducting members of different structures for different paths: signal transmission. As shown in FIG. 5, a plurality of light-conducting members 32 and 33 are formed on the surface of the insulating protective layer 26, and at least one of the light-transmitting members 32 and 33 is 18760 17 1302428 & a reflective surface 32a, 33a 'where the reflections 223a, 223b at both ends of the light-conducting member 32 correspond to the top end of the opening 23'', and the reflecting surface 33a of the other light-conducting member 33 corresponds to the light-acting portion of the first-photoelectric element 22a. The top end of the opening 231. Therefore, the first optoelectronic component ... simultaneously corresponds to the two reflective surfaces 32a, 33a, and can simultaneously receive optical signals from the two optical conducting members 32, 33, or simultaneously transmit optical signals to the two optical conducting members 3, 3, 3 3 light signal.俾 Enable signal multi-point transmission to enhance the transmission and processing capabilities of optical signals. At least the semiconductor element 24 ′ is disposed in the opening 211 of the carrier 21 , and the semiconductor element 24 has a plurality of electrode pads 241 , and the conductive structure 251 in the circuit layer 25 is electrically connected to the semiconductor Electrode 塾 241 of element 24. As shown in FIG. 5B, a plurality of light-conducting members 34, 35, 36 are formed on the surface of the insulating protective layer 26, and the light-transmitting members 34, 35, 36 have at least one reflecting surface 34a at one end. 35a, 3^. The reflecting surfaces 34a, 35a of the light guiding members 34, 35 are opposite to the light acting region 223a of the first photovoltaic element 22a, and the other reflecting surface 34a of the light conducting member 34 and the reflecting surface 36a of the other light conducting member 36. Relative to the photo-active region 223b of the second photovoltaic element 22b, the first and second photovoltaic elements 22a, 22b are permeable to the light-transmitting member 34, and the first and second photovoltaic elements 22a, 22b are further The optical signals can be communicated with other optoelectronic components by the optical conducting members 35 and 36, respectively, to improve the electrical performance of the circuit board.甩18 18760 1302428 is further provided with at least one semiconductor component 24 in the opening 211 of the carrier board 21, and the semiconductor component 24 has a plurality of electrode pads 241, and electrically connects the conductive structure 251 in the circuit layer 25 to The electrode pad 2 41 of the semiconductor element. [Fifth Embodiment] i, as shown in Figs. 6A and 6C, is a schematic view of a different embodiment of the method for manufacturing a buried optical component of the circuit board of the present invention. The method of the foregoing embodiments is substantially the same, except that the dielectric layer and the surface of the circuit layer are pressed against the bottom layer of the light-conducting member = the cladding layer, and the insulating layer of the above embodiments is replaced by the other layer. As shown in FIGS. 6A and 6B, the bottom surface of the light-transmitting member 27 has a coating layer 272, and a reflective surface 273 is formed at both ends of the core layer 271, and another surface is formed on the top surface of the core layer 271. a coating layer of milk, a surface 272 of the bottom surface of the light guiding member 27 is formed on the surface of the dielectric layer 23 and the tidal layer 25, thereby protecting the surface layer of the surface of the dielectric layer 23, and the light-transmitting member 27 The reflecting surface 273 is located in the dielectric 3523 "opening 23" to correspond to the first and second photoelectric (four) light effects 223a, 223b. Referring to FIGS. 6C and 6C, the optical conducting member 27 and the covering layer 272 on the most layer can be formed to form an encapsulant or a protective cover of the metal casing to protect the optical conducting member 27 from being avoided. It is damaged by external influences to improve product life. ^ Through the opening σ 231 of the dielectric layer 23 is filled with a light guiding material (Fig., table) or vacuumed to reduce the interference of external noise. 18760 19 1302428 The method for fabricating a photovoltaic element in the panel is mainly a light-emitting element of the active surface of the second light-f element, and the plurality of electrodes and the light-applying region on the surface of the carrier plate, and a plurality of 2::::::. openings in the dielectric layer are formed in the dielectric layer, and are connected to the electrode pads of the photovoltaic element of the photoelectric element and the second is connected to the light The connection of the transceiver components == 吏 3 way layer of the light-emitting area of the direct electrical component corresponds to the dielectric layer, and the second: the first and the second illuminating electronic device are placed on the optoelectronic integrated semiconductor device with a short demand. - The light-conducting layer of the circuit layer can form a solder mask layer and at least the sound and core, and / / It can improve the density of the wiring of the line. The same as I. I. II. The method of embedding the optoelectronic components of the board of the Ming Dynasty can be based on the actual / 5 to 2 on the dielectric layer and the circuit layer to carry out the line build-up process = Formation - line build-up structure to meet the ever-increasing demand for electronic products. In the present invention, the bottom surface of the carrier plate is further formed with a heat dissipation plate, so that the heat generated by the operation of the first and second photovoltaic elements can be dissipated in time through the heat dissipation plate, thereby enhancing the embedding of the circuit board of the present invention. The heat dissipation effect of the method of manufacturing the photovoltaic element; or the circuit board can be formed on the bottom surface of the carrier board to increase the electrical function. 9 18760 20 1302428 "The above-described embodiments are merely illustrative of the principles of the invention and the direct function, and are not intended to limit the invention. Anyone who has the skills of this technology can refrain from the spirit and scope of the present invention, and the above-mentioned yokes are modified to be straight, and the present invention is The scope of protection of rights shall be listed in the scope of patents as described later. Text, Yi Jia Ming [Simple Description of the Drawings] Figure 1 is a section of the U.S. Patent Publication No. U39, 476. A schematic cross-sectional view of a conventional embodiment of a method for embedding a photovoltaic element in a circuit board of the present invention; f 2F, a cross-sectional view of another embodiment of FIG. 2F; FIG. 3A and FIG. 3B are diagrams of the present invention Change the mountain system 4~a circuit board 肷 buried optoelectronic components clothing faile consistent example with a heat dissipation structure profile; system 4A to 4D diagram is the invention of the circuit board embedded photoelectric components 2 is a cross-sectional view of the third embodiment of FIG. 4D; and FIG. 5A and FIG. 5B are the connection of the embedded optical components of the circuit board of the present invention; A cross-sectional view of a fourth embodiment of a majority of the light-conducting members; - Figures 6A through 6C are BRIEF DESCRIPTION OF THE DRAWINGS FIG. 6C is a cross-sectional view showing a fifth embodiment of a printed circuit board; and FIG. 6C' is a cross-sectional view showing another embodiment of FIG. 6C. [Main element symbol description] 1 bottom layer 2 core layer 18760 1302428 12a trench 13 fiber 13a core 13b shell 14 top layer 2 228 carrier plates 210, 211, 231, 262, 31a, 31b openings 221a, 221b, 24a active surfaces 222a, 222b, 24b non-active surfaces 223a, 223b light active regions 224a, 224b 241 electrode pad 22a first photovoltaic element 22b second photovoltaic element 23, 311 dielectric layer 230 opening 24 semiconductor element 25, 312 circuit layer 251, 313 conductive structure 26 insulating protective layer 27, 32, 33, 34, 35, 36 Light-conducting member 271 Core layer 272, 272' cladding layer 273, 32a, 33a, 34a, 35a, 36a Reflecting surface 28 Encapsulant 22 18760 1302428 28, Metal housing 29a Metal block 31 Line build-up structure