TWI393279B - High pressure electrical properties of lead zirconate titanate silicon dioxide flexible film and its preparation method - Google Patents
High pressure electrical properties of lead zirconate titanate silicon dioxide flexible film and its preparation method Download PDFInfo
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- 229910052451 lead zirconate titanate Inorganic materials 0.000 title claims description 143
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 title claims description 129
- 238000002360 preparation method Methods 0.000 title description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title description 3
- 235000012239 silicon dioxide Nutrition 0.000 title 1
- 239000000377 silicon dioxide Substances 0.000 title 1
- 239000002131 composite material Substances 0.000 claims description 92
- 238000000034 method Methods 0.000 claims description 48
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 36
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 34
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 34
- 238000005245 sintering Methods 0.000 claims description 33
- 229920000307 polymer substrate Polymers 0.000 claims description 32
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 28
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 239000008367 deionised water Substances 0.000 claims description 13
- 229910021641 deionized water Inorganic materials 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 11
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 10
- 239000004642 Polyimide Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052726 zirconium Inorganic materials 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- -1 citrate (tetra- strontium) Ethyl-ortho-silicate Chemical compound 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 6
- 238000007605 air drying Methods 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 claims description 2
- 239000012327 Ruthenium complex Substances 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 239000012425 OXONE® Substances 0.000 claims 1
- 229910000416 bismuth oxide Inorganic materials 0.000 claims 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims 1
- 239000011368 organic material Substances 0.000 claims 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000002033 PVDF binder Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 6
- 238000003980 solgel method Methods 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000001962 electrophoresis Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- PMTRSEDNJGMXLN-UHFFFAOYSA-N titanium zirconium Chemical compound [Ti].[Zr] PMTRSEDNJGMXLN-UHFFFAOYSA-N 0.000 description 1
- PZJJKWKADRNWSW-UHFFFAOYSA-N trimethoxysilicon Chemical compound CO[Si](OC)OC PZJJKWKADRNWSW-UHFFFAOYSA-N 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
本發明係有關於一種可撓型薄膜及其製法,尤其是一種之高壓電特性鋯鈦酸鉛二氧化矽可撓型薄膜及其製法。The invention relates to a flexible film and a preparation method thereof, in particular to a high-voltage electrical characteristic lead zirconate titanate ruthenium dioxide flexible film and a preparation method thereof.
一般常見的壓電材料以聚偏二氟乙烯(Polyvinylidene Floride,PVDF)及鋯鈦酸鉛(Lead Zirconate Titanate,PZT)塊材為主,其中,PVDF常被用於軟性基板中,其係由於PVDF為聚合物壓電材料,所以可以很輕易的和撓性基板接合,因此相較於陶瓷式壓電材料而言,PVDF能承受較大的應力產生彎曲變形,受到大的衝擊量亦不會造成破裂。而PVDF的缺點在於材料本身壓電特性不佳,且操作溫度超過65℃時,壓電性質有明顯的退化。而PZT塊材雖具有優越的壓電性能,但其硬度遠大於撓性基材,且不易受到彎曲變形,也無法承受太大衝擊力,因此在接合和驅動都不適合應用於高分子基板上。Commonly used piezoelectric materials are mainly polyvinylidene fluoride (PVDF) and lead zirconate Titanate (PZT) blocks. Among them, PVDF is often used in soft substrates due to PVDF. It is a polymer piezoelectric material, so it can be easily bonded to a flexible substrate. Therefore, compared with ceramic piezoelectric materials, PVDF can withstand large stresses and bend deformation, and the impact is not caused by a large impact. rupture. The disadvantage of PVDF is that the piezoelectric properties of the material itself are not good, and the piezoelectric properties are significantly degraded when the operating temperature exceeds 65 °C. PZT blocks have superior piezoelectric properties, but their hardness is much larger than that of flexible substrates, and they are not susceptible to bending deformation and can not withstand too much impact force. Therefore, bonding and driving are not suitable for use on polymer substrates.
厚度在10μm以下之PZT稱為PZT薄膜,最常見的PZT薄膜製程有濺鍍法及溶膠-凝膠法,濺鍍法製程係先熔煉出靶材後,再利用電漿對靶材做離子轟擊,即能將PZT薄膜沉積至基板上。濺鍍法優點為製程簡單、不易受外界環境影響,然而,PZT薄膜在Pb1 (Zr0.52 、Ti0.48 )O3 之比例中有最佳壓電特性,但Pb(327℃)、Zr(1855℃)、Ti(1668℃)的金屬熔點差異太大而導致金屬揮發效果不一,所以在熔煉靶材過程中,於達到鋯、鈦的熔點溫度前即已達到鉛之汽化溫度,因而造成鉛金屬揮發,導致PZT薄膜無法擁有最佳的組成比例;另外,利用高能量電漿對靶材做離子轟擊,也會因Pb、Zr、Ti金屬所需的激發能量不一,而難以達到PZT薄膜之最佳組成,因此以濺鍍法所沉積的PZT薄膜成分比例較難以控制。PZT with a thickness of less than 10μm is called PZT film. The most common PZT film process has sputtering method and sol-gel method. The sputtering process first melts the target and then uses plasma to bombard the target. The PZT film can be deposited onto the substrate. The advantage of sputtering is that the process is simple and not easily affected by the external environment. However, the PZT film has the best piezoelectric characteristics in the ratio of Pb 1 (Zr 0.52 , Ti 0.48 )O 3 , but Pb (327 ° C), Zr (1855) °C), Ti (1668 ° C), the difference in melting point of the metal is too large, resulting in different metal volatilization effects, so in the process of melting the target, before reaching the melting point temperature of zirconium, titanium has reached the vaporization temperature of lead, thus causing lead The volatilization of the metal results in the PZT film not having the best composition ratio. In addition, the ion bombardment of the target with high-energy plasma can also cause the PZT film to be difficult due to the different excitation energies of the Pb, Zr, and Ti metals. The optimum composition, so the proportion of PZT film components deposited by sputtering is more difficult to control.
溶膠-凝膠法係先調配鋯鈦酸鉛溶液,在溶液中可以有效並精準控制Pb、Zr、Ti比例,再利用旋鍍法或是浸泡法沉積PZT到基板,進行燒結成膜,因此可以得到較佳壓電特性的PZT薄膜,且相較濺鍍法和其他製程,溶膠-凝膠法並不需昂貴設備,然而,一般的可撓基板時多為高分子材料所製成,其玻璃轉換溫度(Glass Temperature)大都低於200℃,但PZT薄膜的燒結溫度約為650℃,因此利用溶膠-凝膠法沉積PZT薄膜於可撓基板時,會因為燒結溫度較高而損壞可撓基板結構;再者,可撓基板的熱膨脹係數都遠大於金屬和其他材料,在加溫過程中很容易造成燒結的不穩定,因此,如何製造出具有可撓性的高壓電薄膜於可撓基板上,並避免製程溫度過高而損壞可撓基板,實為相當重要的課題。The sol-gel method firstly prepares a lead zirconate titanate solution, and can effectively and accurately control the ratio of Pb, Zr, and Ti in the solution, and then deposit the PZT onto the substrate by spin coating or immersion to form a film by sintering, thereby The PZT film with better piezoelectric characteristics is obtained, and the sol-gel method does not require expensive equipment compared with the sputtering method and other processes. However, the general flexible substrate is mostly made of a polymer material, and the glass thereof is used. The conversion temperature (Glass Temperature) is mostly lower than 200 ° C, but the sintering temperature of the PZT film is about 650 ° C. Therefore, when the PZT film is deposited on the flexible substrate by the sol-gel method, the flexible substrate is damaged due to the high sintering temperature. In addition, the thermal expansion coefficient of the flexible substrate is much larger than that of metals and other materials, and it is easy to cause instability of the sintering during the heating process. Therefore, how to manufacture a flexible high-voltage electric film on the flexible substrate It is a very important issue to avoid damage to the flexible substrate due to excessive process temperature.
本發明人有鑑於一般的鋯鈦酸鉛薄膜不易彎曲變形,也無法承受太大衝擊力,而無法沉積於撓性基板上,且溶膠-凝膠法需要高溫燒結才能獲得較佳壓電特性之鋯鈦酸鉛薄膜,但撓性基板的結構於鋯鈦酸鉛薄膜於高溫燒結時容易受到破壞,經過長時間的研究以及不斷試驗後,終於發明出此高壓電特性鋯鈦酸鉛二氧化矽可撓型薄膜及其製法。The inventors have in view of the fact that the general lead zirconate titanate film is not easily bent and deformed, and cannot withstand too much impact force, and cannot be deposited on a flexible substrate, and the sol-gel method requires high-temperature sintering to obtain better piezoelectric characteristics. Lead zirconate titanate film, but the structure of the flexible substrate is easily damaged when the lead zirconate titanate film is sintered at high temperature. After long-term research and continuous testing, the high-voltage electrical characteristics of lead zirconate titanate is finally invented.矽Flexible film and its preparation method.
為達上述目的本發明所運用的技術手段係在於提供一種高壓電特性鋯鈦酸鉛二氧化矽可撓型薄膜,係包括:一高分子基板;一下電極導電層,係形成於該高分子基板上;一鋯鈦酸鉛二氧化矽複合薄膜,係具有撓性並形成於該下電極導電層上;一上電極導電層,係形成於該鋯鈦酸鉛二氧化矽複合薄膜上。The technical means used in the present invention to achieve the above object is to provide a high-voltage electrical characteristic lead zirconate titanate flexible film comprising: a polymer substrate; a lower electrode conductive layer formed on the polymer On the substrate, a lead zirconate titanate composite film is flexible and formed on the lower electrode conductive layer; an upper electrode conductive layer is formed on the lead zirconate titanate composite film.
前述之可撓型薄膜,其中,該鋯鈦酸鉛二氧化矽複合薄膜的厚度係為50nm~50μm。In the above flexible film, the lead zirconate titanate composite film has a thickness of 50 nm to 50 μm.
前述之可撓型薄膜,其中,該鋯鈦酸鉛二氧化矽複合薄膜的厚度係為7μm。In the above flexible film, the lead zirconate titanate composite film has a thickness of 7 μm.
前述之可撓型薄膜,其中,該鋯鈦酸鉛二氧化矽複合薄膜係包括鋯鈦酸鉛、二氧化矽及MPS([3-(Methacryloyloxy)propyl]trimethoxysilane)。In the above flexible film, the lead zirconate titanate composite film comprises lead zirconate titanate, cerium oxide and MPS ([3-(Methacryloyloxy)propyl]trimethoxysilane).
前述之可撓型薄膜,其中,該高分子基板係為聚醯亞胺基板,該下電極導電層為銅導電層,該上電極導電層係包括鉻導電層及金導電層。In the above flexible film, the polymer substrate is a polyimide substrate, the lower electrode conductive layer is a copper conductive layer, and the upper electrode conductive layer comprises a chromium conductive layer and a gold conductive layer.
前述之可撓型薄膜,其中,該聚醯亞胺基板的厚度為12μm,該銅導電層的厚度為35μm,該鉻導電層的厚度為30nm,該金導電層的厚度為120nm。In the above flexible film, the polyimide substrate has a thickness of 12 μm, the copper conductive layer has a thickness of 35 μm, the chromium conductive layer has a thickness of 30 nm, and the gold conductive layer has a thickness of 120 nm.
本發明又關於一種高壓電特性鋯鈦酸鉛二氧化矽可撓型薄膜之製法,其步驟包括:形成下電極導電層於高分子基板,係於一高分子基板表面形成一下電極導電層;塗佈鋯鈦酸鉛二氧化矽複合溶膠,係將一鋯鈦酸鉛二氧化矽複合凝膠均勻塗佈於該下電極導電層表面;燒結製程,係將該鋯鈦酸鉛二氧化矽複合凝膠加溫至90~270℃,使該鋯鈦酸鉛二氧化矽複合凝膠內的有機物完全揮發形成一鋯鈦酸鉛二氧化矽複合薄膜於該下電極導電層表面;備製上電極導電層,係將一上電極導電層形成於該鋯鈦酸鉛二氧化矽複合薄膜表面,使該高分子基板、該下電極導電層、該鋯鈦酸鉛二氧化矽複合薄膜及該上電極導電層形成一鋯鈦酸鉛二氧化矽可撓型薄膜。The invention further relates to a method for preparing a high-voltage electrical characteristic lead zirconate titanate flexible film, the method comprising the steps of: forming a lower electrode conductive layer on a polymer substrate, forming a lower electrode conductive layer on a surface of a polymer substrate; The lead zirconate titanate cerium oxide composite sol is coated by uniformly coating a lead zirconate titanate cerium oxide composite gel on the surface of the lower electrode conductive layer; the sintering process is to combine the lead zirconate titanate cerium oxide composite The gel is heated to 90-270 ° C, and the organic substance in the lead zirconate titanate composite gel is completely volatilized to form a lead zirconate titanate composite film on the surface of the lower electrode conductive layer; a conductive layer is formed on the surface of the lead zirconate titanate composite film, the polymer substrate, the lower electrode conductive layer, the lead zirconate titanate composite film, and the upper electrode The conductive layer forms a lead zirconate titanate ruthenium oxide film.
前述之可撓型薄膜之製法,其中,該鋯鈦酸鉛二氧化矽複合溶膠係添加有MPS。In the above method for producing a flexible film, the lead zirconate titanate composite sol is added with MPS.
前述之可撓型薄膜之製法,其中,該燒結製程步驟中,係利用變溫燒結將該鋯鈦酸鉛二氧化矽複合凝膠增加溫度達150℃。In the above method for producing a flexible film, in the sintering process, the lead zirconate titanate composite gel is heated to a temperature of 150 ° C by temperature-changing sintering.
前述之可撓型薄膜之製法,其中,該燒結製程步驟中,該變溫燒結的溫升速率為3~20℃/min,當溫度到達150℃後,持溫5~120分鐘,溫降速率為3~20℃/min以到達室溫。In the above method for producing a flexible film, in the sintering process, the temperature rise rate of the temperature-changing sintering is 3 to 20 ° C / min, and when the temperature reaches 150 ° C, the temperature is maintained for 5 to 120 minutes, and the temperature drop rate is 3~20 °C / min to reach room temperature.
前述之可撓型薄膜之製法,於該形成下電極導電層於高分子基板步驟及該塗佈鋯鈦酸鉛二氧化矽複合溶膠步驟之間,係包括一備製鋯鈦酸鉛二氧化矽複合溶膠步驟,該備製鋯鈦酸鉛二氧化矽複合溶膠步驟係包括:備製A溶液,係將四乙基矽酸鹽(tetra-ethyl-ortho-silicate,TEOS)、MPS、乙醇、去離子水及1N的鹽酸混合後而成為A溶液;備製B溶液,係將1N鹽酸、去離子水與該A溶液混合後而成為B溶液;備製C溶液,係將鋯鈦酸鉛分散於乙醇而成為C溶液;備製鋯鈦酸鉛二氧化矽複合溶膠,係將該B溶液加入至該C溶液中,混合而成為鋯鈦酸鉛二氧化矽複合溶膠。The method for preparing the flexible film comprises: preparing a lower electrode conductive layer in the polymer substrate step and the coating the lead zirconate titanate composite sol step, comprising preparing a lead zirconate titanate cerium oxide In the composite sol step, the prepared lead zirconate titanate cerium oxide composite sol step comprises: preparing a solution A, which is tetra-ethyl-ortho-silicate (TEOS), MPS, ethanol, Ionized water and 1N hydrochloric acid are mixed to form A solution. Prepare B solution by mixing 1N hydrochloric acid and deionized water with the A solution to form B solution. Prepare C solution by dispersing lead zirconate titanate. Ethanol is used as the C solution; and the lead zirconate titanate cerium oxide composite sol is prepared, and the B solution is added to the C solution and mixed to form a lead zirconate titanate composite sol.
前述之可撓型薄膜之製法,其中,該備製鋯鈦酸鉛二氧化矽複合溶膠步驟之參數為:該備製A溶液步驟中,該MPS與該TEOS之莫爾濃度比值為0.01~0.5,該乙醇與該TEOS之莫爾濃度比值為1~20,該去離子水與該TEOS之莫爾濃度比值為1~20,該鹽酸與該TEOS之莫爾濃度比值為1×10-3 ~0.1;該備製B溶液步驟中,該鹽酸與該備製A溶液步驟中之該TEOS的莫爾濃度比值為0.1~5;該去離子水與該備製A溶液步驟中之該TEOS之莫爾濃度比值為0.1~10;該備製C溶液步驟中,該鋯鈦酸鉛與該備製B溶液步驟中之該TEOS中的二氧化矽的莫爾數比為0.5:10;該乙醇與該B溶液之體積比值為0.5~5。The method for preparing a flexible film according to the above, wherein the step of preparing the lead zirconate titanate composite sol step is: in the step of preparing the A solution, the ratio of the molar concentration of the MPS to the TEOS is 0.01 to 0.5 The molar concentration ratio of the ethanol to the TEOS is 1-20, the molar concentration ratio of the deionized water to the TEOS is 1-20, and the molar ratio of the hydrochloric acid to the TEOS is 1×10 -3 ~ 0.1; in the step of preparing the B solution, the ratio of the molar concentration of the TEOS in the step of preparing the prepared hydrochloric acid solution is 0.1 to 5; the deionized water and the TEOS in the step of preparing the A solution The molar concentration ratio is 0.1-10; in the preparation of the C solution step, the molar ratio of the lead zirconate titanate to the cerium oxide in the TEOS in the step of preparing the B solution is 0.5:10; The volume ratio of the B solution is 0.5 to 5.
前述之可撓型薄膜之製法,其中,該備製鋯鈦酸鉛二氧化矽複合溶膠步驟係進一步包括:該備製A溶液的步驟中,係將該TEOS、該MPS、該乙醇、該去離子水及該鹽酸混合後,升溫至40℃~80℃並持續10~180分鐘而成為該A溶液;該備製B溶液步驟中,係將該鹽酸和該去離子水與該A溶液混合後,溫度維持於40℃~80℃,時間10~150分鐘而成為該B溶液;該備製C溶液步驟中,係將該鋯鈦酸鉛和該乙醇經超音波清洗器震盪10~600分鐘,均勻的將該鋯鈦酸鉛分散於該乙醇而成為該C溶液,該鋯鈦酸鉛係為鋯鈦酸鉛顆粒;備製鋯鈦酸鉛二氧化矽複合溶膠,係將該B溶液加入至該C溶液中,攪拌混合30秒~30分鐘而成為該鋯鈦酸鉛二氧化矽複合溶膠。The method for preparing a flexible film according to the above, wherein the step of preparing a lead zirconate titanate composite sol further comprises: in the step of preparing the solution A, the TEOS, the MPS, the ethanol, the After the mixed water and the hydrochloric acid are mixed, the temperature is raised to 40 ° C to 80 ° C for 10 to 180 minutes to become the A solution; in the step of preparing the B solution, the hydrochloric acid and the deionized water are mixed with the A solution. The temperature is maintained at 40 ° C ~ 80 ° C, the time is 10 ~ 150 minutes to become the B solution; in the preparation of the C solution step, the lead zirconate titanate and the ethanol is oscillated by the ultrasonic cleaner for 10 to 600 minutes, The lead zirconate titanate is uniformly dispersed in the ethanol to form the C solution, the lead zirconate titanate is lead zirconate titanate particles; and the lead zirconate titanate cerium oxide composite sol is prepared by adding the B solution to The C solution was stirred and mixed for 30 seconds to 30 minutes to form the lead zirconate titanate composite sol.
前述之可撓型薄膜之製法,於該備製鋯鈦酸鉛二氧化矽複合溶膠步驟及該燒結製程步驟之間,係包括一空乾處理步驟,其係使該鋯鈦酸鉛二氧化矽複合溶膠內之有機物揮發而形成一鋯鈦酸鉛二氧化矽複合凝膠層於該下電極導電層表面。The method for preparing the flexible film according to the step of preparing the lead zirconate titanate cerium oxide composite sol and the sintering process step comprises an air drying treatment step of combining the lead zirconate titanate The organic matter in the sol volatilizes to form a lead zirconate titanate composite gel layer on the surface of the lower electrode conductive layer.
本發明所提供之高壓電特性鋯鈦酸鉛二氧化矽可撓型薄膜及其製法,藉由上述技術手段,可以獲得的優點及功效增進至少包括:The high-voltage electric characteristic lead zirconate titanate ruthenium dioxide flexible film provided by the invention and the preparation method thereof, the advantages and the enhancements obtained by the above technical means include at least:
1、本發明以低溫燒結燒結的方法,有效降低溶膠-凝膠法需要高溫燒結才能獲得較佳壓電特性之鋯鈦酸鉛薄膜之問題。1. The invention adopts a low-temperature sintering and sintering method to effectively reduce the problem that the sol-gel method requires high-temperature sintering to obtain a lead zirconate titanate film having better piezoelectric characteristics.
2、本發明之鋯鈦酸鉛二氧化矽複合溶膠中添加MPS,使備製出該鋯鈦酸鉛二氧化矽複合薄膜本身具備較佳之撓性,因此可獲得具備撓性且耐衝擊性之壓電材料,並能沉積於撓性基板上。2. The MPS is added to the lead zirconate titanate cerium oxide composite sol according to the present invention, so that the lead zirconate titanate composite film itself has better flexibility, so that flexibility and impact resistance can be obtained. Piezoelectric material and can be deposited on a flexible substrate.
為能詳細瞭解本發明的技術特徵及實用功效,並可依照說明書的內容來實施,茲進一步以如圖所示的較佳實施例,詳細說明如后:本發明之較佳實施例請參照第一圖所示,本發明為一種高壓電特性鋯鈦酸鉛二氧化矽可撓型薄膜及其製法,其中高壓電特性鋯鈦酸鉛二氧化矽可撓型薄膜之製法,其步驟包含形成下電極導電層於高分子基板(10)、備製鋯鈦酸鉛二氧化矽複合溶膠(20)、塗佈鋯鈦酸鉛二氧化矽複合溶膠(30)、空乾處理(40)、燒結製程(50)、備製上電極導電層(60):該形成下電極導電層於高分子基板(10)步驟請參照第二圖所示,係先於一高分子基板(71)上形成一下電極導電層(72);該高分子基板(71)係可為聚醯亞胺(polyimide,PI)、聚對苯二甲酸二乙酯(plyethylene terephathalate,PET)、聚萘二甲酸乙二酯(polyethylene 2,6-naphthalate,PEN)、聚對二甲苯(poly-para-xylylene,parylene)、聚甲基丙烯酸甲酯(poly(methyl methacrylate),PMMA)、聚醚(Poly(ether sulfone),PES)、聚碳酸酯(Polycarbonate,PC)、聚酯(polyester)等高分子基板,本較佳實施例係採用厚度為12μm之聚醯亞胺基板,於該聚醯亞胺基板上,利用銅、金、鋁、鈦、銀...等金屬以延壓、蒸鍍、濺鍍、電解、電泳、旋鍍、浸鍍、網印及噴霧等方法形成該下電極導電層(72)。本較佳實施例中,該下電極導電層(72)為厚度35μm之銅導電層,其係以延壓形成該下電極導電層(72)於該聚醯亞胺基板表面上。In order to understand the technical features and practical effects of the present invention in detail, and in accordance with the contents of the specification, the detailed description of the preferred embodiments as illustrated in the following: As shown in the figure, the present invention is a high-voltage electric characteristic lead zirconate titanate ruthenium oxide flexible film and a preparation method thereof, wherein the high-voltage electric characteristic lead zirconate titanate ruthenium oxide flexible film is produced, and the steps thereof include Forming a lower electrode conductive layer on the polymer substrate (10), preparing a lead zirconate titanate cerium oxide composite sol (20), coating a lead zirconate titanate cerium oxide composite sol (30), air drying treatment (40), Sintering process (50), preparing the upper electrode conductive layer (60): the step of forming the lower electrode conductive layer on the polymer substrate (10), as shown in the second figure, is formed on a polymer substrate (71) The electrode conductive layer (72); the polymer substrate (71) may be polyimide (PI), polyethylene terephathalate (PET), polyethylene naphthalate (polyethylene 2,6-naphthalate, PEN), poly-para-xylylene (parylene), poly Polymer substrate such as poly(methyl methacrylate), PMMA, poly(ether sulfone, PES), polycarbonate (PC), polyester, etc., this preferred embodiment A polyimide substrate having a thickness of 12 μm is used, and a metal such as copper, gold, aluminum, titanium or silver is used for stretching, vapor deposition, sputtering, electrolysis, electrophoresis on the polyimide substrate. The lower electrode conductive layer (72) is formed by spin coating, dip plating, screen printing, and spraying. In the preferred embodiment, the lower electrode conductive layer (72) is a copper conductive layer having a thickness of 35 μm, which is formed by stretching to form the lower electrode conductive layer (72) on the surface of the polyimide substrate.
該備製鋯鈦酸鉛二氧化矽複合溶膠(20)步驟請參照第三圖所示,係包括:For the preparation of the lead zirconate titanate cerium oxide composite sol (20), please refer to the third figure, which includes:
1、備製A溶液:先將四乙基矽酸鹽(tetra-ethyl-ortho-silicate,(C2 H5 O)4Si,TEOS)6.34ml~25.28ml、MPS([3-(Methacryloyloxy)propyl]trimethoxysilane,H2 C=C(CH3 )CO2 (CH2 )3Si(OCH3 )3 )0.27ml~3.37ml、乙醇6.45ml~32.26ml、去離子水2ml~10ml及1N的鹽酸9.8×10-3 ml~0.25ml混合後,升溫至40℃~80℃並持續10~180分鐘而成為A溶液;其中該MPS與該TEOS之莫爾濃度比值為0.01~0.5;該乙醇與該TEOS之莫爾濃度比值為1~20;該去離子水與該TEOS之莫爾濃度比值為1~20;該鹽酸與該TEOS之莫爾濃度比值為1×10-3 ~0.1,而該MPS係為一種偶合劑;1. Prepare solution A: first tetraethyl-ortho-silicate ((C 2 H 5 O) 4Si, TEOS) 6.34ml~25.28ml, MPS([3-(Methacryloyloxy)propyl) ]trimethoxysilane, H 2 C=C(CH 3 )CO 2 (CH 2 )3Si(OCH 3 ) 3 )0.27ml~3.37ml, ethanol 6.45ml~32.26ml, deionized water 2ml~10ml and 1N hydrochloric acid 9.8× After mixing 10 -3 ml~0.25ml, the temperature is raised to 40 ° C ~ 80 ° C for 10 ~ 180 minutes to become A solution; wherein the ratio of the MPS to the TEOS molar concentration is 0.01 ~ 0.5; the ethanol and the TEOS The Mohr concentration ratio is 1-20; the ratio of the deionized water to the TEOS molar concentration is 1-20; the ratio of the hydrochloric acid to the TEOS molar concentration is 1×10 -3 ~0.1, and the MPS system is a coupling agent;
2、備製B溶液:將1N鹽酸0.98ml~12.25ml和去離子水0.2ml~5ml混合於該A溶液,溫度維持於40℃~80℃並持續10~150分鐘而成為B溶液;其中,該鹽酸與該備製A溶液步驟中之該TEOS的莫爾濃度比值為0.1~5;該去離子水與該備製A溶液步驟中之該TEOS的莫爾濃度比值為0.1~10;2, preparing B solution: mixing 1N hydrochloric acid 0.98ml ~ 12.25ml and deionized water 0.2ml ~ 5ml mixed in the A solution, the temperature is maintained at 40 ° C ~ 80 ° C for 10 ~ 150 minutes to become a B solution; The molar concentration ratio of the TEOS in the step of preparing the A solution is 0.1 to 5; the ratio of the molar concentration of the TEOS in the step of the deionized water and the preparation of the solution A is 0.1 to 10;
3、備製C溶液:將鋯鈦酸鉛、氧化鋅、鈦酸鋇、氧化鈦、氧化釩、氧化鐵及石英等奈微米顆粒及奈微米柱與奈微米管等,在所相容的溶劑中進行分散。本較佳實施例係採用購自寰辰科技,型號為TKB之鋯鈦酸鉛顆粒,其平均粒徑為0.7nm~0.9μm,將此具壓電性質之鋯鈦酸鉛顆粒17.3g~86.5g和乙醇3.26~442ml混合,經超音波清洗器震盪10~600分鐘,以物理方式均勻的將該鋯鈦酸鉛顆粒分散於該乙醇而成為C溶液。其中,該鋯鈦酸鉛顆粒與該備製B溶液步驟中該TEOS中的二氧化矽之莫爾數比值為0.5~10;該乙醇與該B溶液之體積比值為0.5~5;3. Preparation of C solution: Nai micron particles such as lead zirconate titanate, zinc oxide, barium titanate, titanium oxide, vanadium oxide, iron oxide and quartz, and nanometer columns and nanometer tubes, etc., in compatible solvents Disperse in the middle. The preferred embodiment adopts lead zirconate titanate particles of the type TKB, which is purchased from Yuchen Technology, and has an average particle diameter of 0.7 nm to 0.9 μm. The piezoelectric zirconate titanate particles are 17.3 g to 86.5. g and ethanol 3.26 ~ 442ml mixed, oscillated by ultrasonic cleaning for 10 to 600 minutes, physically and uniformly dispersed the lead zirconate titanate particles in the ethanol to become a C solution. The molar ratio of the lead zirconate titanate particles to the preparation of the solution B in the TEOS is 0.5 to 10; the volume ratio of the ethanol to the B solution is 0.5 to 5;
4、備製鋯鈦酸鉛二氧化矽複合溶膠:將B溶液加入至C溶液中,攪拌混合30秒~30分鐘而成為鋯鈦酸鉛二氧化矽複合溶膠。4. Preparing a lead zirconate titanate composite sol: adding the B solution to the C solution, stirring and mixing for 30 seconds to 30 minutes to become a lead zirconate titanate composite sol.
該塗佈鋯鈦酸鉛二氧化矽複合溶膠(30)步驟,係以旋轉塗佈法、浸入塗佈法、噴霧法、電泳法、網印法、噴墨法、滾壓塗佈法等方法將鋯鈦酸鉛二氧化矽複合溶膠形成於該下電極導電層(72)表面,本較佳實施例則主要利用旋轉塗佈法將鋯鈦酸鉛二氧化矽複合溶膠塗佈於該下電極導電層(72)表面;其中,塗轉塗佈轉速及時間請參照第四圖所示,為了讓鋯鈦酸鉛二氧化矽複合溶膠均勻分散於該下電極導電層(72)上,本較佳實施例係先以初轉速(每分鐘轉速500轉,維持時間20秒)讓滴於該下電極導電層(72)表面之鋯鈦酸鉛二氧化矽複合溶膠中之鋯鈦酸鉛均勻分佈於導電層表面後,再加快轉速至末轉速(每分鐘轉速2000轉,維持時間20秒),使該鋯鈦酸鉛二氧化矽複合溶膠能均勻分佈至該下電極導電層(72)表面。The step of coating the lead zirconate titanate cerium oxide composite sol (30) is a spin coating method, a dip coating method, a spray method, an electrophoresis method, a screen printing method, an inkjet method, a roll coating method, or the like. A lead zirconate titanate composite sol is formed on the surface of the lower electrode conductive layer (72). In the preferred embodiment, a lead zirconate titanate composite sol is applied to the lower electrode by a spin coating method. The surface of the conductive layer (72); wherein, the coating rotation speed and time are as shown in the fourth figure, in order to uniformly disperse the lead zirconate titanate composite sol on the lower electrode conductive layer (72), In the preferred embodiment, the lead zirconate titanate is uniformly distributed in the lead zirconate titanate ceria composite sol which is dropped on the surface of the lower electrode conductive layer (72) at an initial rotation speed (500 rpm and a holding time of 20 seconds). After the surface of the conductive layer, the rotation speed is increased to the final rotation speed (2000 rpm, and the holding time is 20 seconds), so that the lead zirconate titanate composite sol can be uniformly distributed to the surface of the lower electrode conductive layer (72).
該空乾處理(40)步驟,係將塗佈有鋯鈦酸鉛二氧化矽複合溶膠之該高分子基板(71)放置於防潮箱中,於常溫下維持1秒~30分鐘,使該鋯鈦酸鉛二氧化矽複合溶膠內之有機物揮發,而形成一鋯鈦酸鉛二氧化矽複合凝膠層於該下電極導電層(72)表面。In the air drying process (40), the polymer substrate (71) coated with the lead zirconate titanate composite sol is placed in a moisture-proof box and maintained at room temperature for 1 second to 30 minutes to make the zirconium. The organic substance in the lead titanate cerium oxide composite sol volatilizes to form a lead zirconate titanate composite gel layer on the surface of the lower electrode conductive layer (72).
該燒結製程(50)步驟,係可採用變溫燒結、快速燒結...等方法進行。本較佳實施例主要利用變溫燒結將空乾處理(40)後之該高分子基板(71)放入高溫爐內增加溫度,變溫燒結的溫升速率為3~20℃/min,當溫度到達90~270℃後,持溫5~120分鐘,溫降速率為3~20℃/min以到達室溫,使該鋯鈦酸鉛二氧化矽複合凝膠層內之有機物完全揮發形成一鋯鈦酸鉛二氧化矽複合薄膜(73)於該下電極導電層(72)表面,於本實施例中,變溫燒結的溫度係為150℃;請參照第五、六圖所示,係分別為該鋯鈦酸鉛二氧化矽複合薄膜之掃描式電子顯微鏡(scanning electron microscope,SEM)及X光繞射結果圖,該鋯鈦酸鉛二氧化矽複合薄膜(73)的厚度係為50nm~50μm,較佳的是7μm;此外,本發明亦可將塗佈有鋯鈦酸鉛二氧化矽複合溶膠之該高分子基板(71)直接進行燒結製程(50)步驟,而不須經過該空乾處理(40)步驟;該備製上電極導電層(60)步驟請參照第二圖所示,係將一上電極導電層(74)形成於含有該鋯鈦酸鉛二氧化矽複合薄膜(73)之該高分子基板(71);該上電極導電層(74)係利用銅、金、鋁、鈦、銀....等金屬以延壓、蒸鍍、濺鍍、電解、電泳、旋鍍、浸鍍、網印及噴霧等方法,備製於該高分子基板(71)上之該鋯鈦酸鉛二氧化矽複合薄膜(73)表面;本較佳實施例中,該上電極導電層(74)係為30nm之鉻導電層及120nm之金導電層,其係先後以蒸鍍的方式形成該上電極導電層(74)於該鋯鈦酸鉛二氧化矽複合薄膜(73)表面;而該高分子基板(71)、該下電極導電層(72)、該鋯鈦酸鉛二氧化矽複合薄膜(73)及該上電極導電層(74)則形成一鋯鈦酸鉛二氧化矽可撓型薄膜(70);如前所述,由於本較佳實施例於鋯鈦酸鉛二氧化矽複合溶膠內添加該MPS,該MPS係使該鋯鈦酸鉛二氧化矽複合薄膜(73)具備優異的可撓性,因此該鋯鈦酸鉛二氧化矽複合薄膜(73)可形成於可撓基板上。此外,本發明使用較低溫(90~270℃)之燒結製程,可以進一步避免高溫燒結過程中,高分子基板在較高溫度時所產生的變形、融化及燒毀等問題,而可順利形成鈦酸鉛二氧化矽複合薄膜於高分子基板上,並擁有良好的壓電特性。The sintering process (50) step can be carried out by a method such as temperature swing sintering, rapid sintering, or the like. In the preferred embodiment, the polymer substrate (71) after air-drying treatment (40) is placed in a high-temperature furnace to increase the temperature, and the temperature rise rate of the temperature-changing sintering is 3-20 ° C/min, when the temperature reaches After 90~270°C, the temperature is 5~120 minutes, and the temperature drop rate is 3~20°C/min to reach room temperature, so that the organic matter in the lead zirconate titanate composite gel layer is completely volatilized to form a zirconium-titanium. The lead-acid cerium oxide composite film (73) is on the surface of the lower electrode conductive layer (72). In this embodiment, the temperature at the temperature-temperature sintering is 150 ° C; please refer to the fifth and sixth figures, respectively. The scanning electron microscope (SEM) and the X-ray diffraction result of the lead zirconate titanate composite film have a thickness of 50 nm to 50 μm. Preferably, the polymer substrate (71) coated with the lead zirconate titanate composite sol is directly subjected to a sintering process (50) without undergoing the air drying treatment. (40) step; the step of preparing the upper electrode conductive layer (60), as shown in the second figure, is to conduct an upper electrode The layer (74) is formed on the polymer substrate (71) containing the lead zirconate titanate composite film (73); the upper electrode conductive layer (74) is made of copper, gold, aluminum, titanium, silver.. The metal is prepared by the method of pressure rolling, vapor deposition, sputtering, electrolysis, electrophoresis, spin plating, immersion plating, screen printing and spraying, and the lead zirconate titanate is prepared on the polymer substrate (71). The surface of the composite film (73); in the preferred embodiment, the upper electrode conductive layer (74) is a 30 nm chromium conductive layer and a 120 nm gold conductive layer, which is formed by vapor deposition to form the upper electrode. a layer (74) on the surface of the lead zirconate titanate composite film (73); and the polymer substrate (71), the lower electrode conductive layer (72), the lead zirconate titanate composite film (73) And the upper electrode conductive layer (74) forms a lead zirconate titanate flexible film (70); as described above, in the preferred embodiment of the lead zirconate titanate composite sol The MPS is added, and the lead zirconate titanate composite film (73) has excellent flexibility, so the lead zirconate titanate composite film (73) can be formed on a flexible base. On. In addition, the present invention uses a lower temperature (90-270 ° C) sintering process, which can further avoid the problems of deformation, melting and burning of the polymer substrate at a high temperature during the high-temperature sintering process, and can smoothly form titanic acid. The lead cerium oxide composite film is on a polymer substrate and has good piezoelectric characteristics.
又,本發明亦可依照前述步驟製造該鋯鈦酸鉛二氧化矽複合溶膠,並均勻塗佈於金屬基板、高分子基板或矽基板上,於本實施例係將該鋯鈦酸鉛二氧化矽複合溶膠塗佈於含有下電極導電層之高分子基板上,再經過前述之該塗佈鋯鈦酸鉛二氧化矽複合溶膠步驟與該燒結製程步驟,使將該鋯鈦酸鉛二氧化矽複合溶膠形成一鋯鈦酸鉛二氧化矽複合薄膜。Moreover, the present invention can also produce the lead zirconate titanate composite sol according to the foregoing steps, and uniformly apply it on a metal substrate, a polymer substrate or a germanium substrate. In this embodiment, the lead zirconate titanate is oxidized. The ruthenium complex sol is coated on the polymer substrate containing the lower electrode conductive layer, and the lead zirconate titanate cerium oxide composite sol step and the sintering process step are performed to make the lead zirconate titanate cerium oxide The composite sol forms a lead zirconate titanate composite film.
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,及大凡依本發明申請專利範圍及說明書內容所作之簡單的等效變化與修飾,皆應仍屬本發明專利涵蓋之範圍內。However, the above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, and the simple equivalent changes and modifications made by the scope of the present invention and the contents of the specification are all It should remain within the scope of this invention.
(10)...形成下電極導電層於高分子基板(10). . . Forming a lower electrode conductive layer on the polymer substrate
(20)...備製鋯鈦酸鉛二氧化矽複合溶膠(20). . . Preparing lead zirconate titanate cerium oxide composite sol
(30)...塗佈鋯鈦酸鉛二氧化矽複合溶膠(30). . . Coating lead zirconate titanate cerium oxide composite sol
(40)...空乾處理(40). . . Air dry processing
(50)...燒結製程(50). . . Sintering process
(60)...備製上電極導電層(60). . . Preparing the upper electrode conductive layer
(70)...鋯鈦酸鉛二氧化矽可撓型薄膜(70). . . Lead zirconate titanate ruthenium dioxide flexible film
(71)...高分子基板(71). . . Polymer substrate
(72)...下電極導電層(72). . . Lower electrode conductive layer
(73)...鋯鈦酸鉛二氧化矽複合薄膜(73). . . Lead zirconate titanate composite film
(74)...上電極導電層(74). . . Upper electrode conductive layer
第一圖係本發明較佳實施例之製法流程圖。The first figure is a flow chart of the method of the preferred embodiment of the present invention.
第二圖係本發明較佳實施例之鋯鈦酸鉛二氧化矽可撓型薄膜結構堆疊流程示意圖。The second figure is a schematic diagram of a stacking process of a zirconium titanate ceria flexible film structure according to a preferred embodiment of the present invention.
第三圖係本發明較佳實施例之備製鋯鈦酸鉛二氧化矽複合溶膠方法示意圖。The third figure is a schematic diagram of a method for preparing a lead zirconate titanate cerium oxide composite sol according to a preferred embodiment of the present invention.
第四圖係本發明較佳實施例之旋轉塗佈之轉速與時間示意圖。The fourth figure is a schematic diagram of the rotational speed and time of spin coating in accordance with a preferred embodiment of the present invention.
第五A圖係本發明較佳實施例之鋯鈦酸鉛二氧化矽複合薄膜之SEM正視圖。Fig. 5A is a SEM front view of a lead zirconate titanate composite film according to a preferred embodiment of the present invention.
第五B圖係本發明較佳實施例之鋯鈦酸鉛二氧化矽複合薄膜之SEM側視圖。Fig. 5B is a SEM side view of a lead zirconate titanate composite film of the preferred embodiment of the present invention.
第六圖係本發明較佳實施例之鋯鈦酸鉛二氧化矽複合薄膜之X光繞射圖。The sixth drawing is an X-ray diffraction pattern of a lead zirconate titanate composite film according to a preferred embodiment of the present invention.
(10)...形成下電極導電層於高分子基板(10). . . Forming a lower electrode conductive layer on the polymer substrate
(20)...備製鋯鈦酸鉛二氧化矽複合溶膠(20). . . Preparing lead zirconate titanate cerium oxide composite sol
(30)...塗佈鋯鈦酸鉛二氧化矽複合溶膠(30). . . Coating lead zirconate titanate cerium oxide composite sol
(40)...空乾處理(40). . . Air dry processing
(50)...燒結製程(50). . . Sintering process
(60)...備製上電極導電層(60). . . Preparing the upper electrode conductive layer
Claims (14)
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| Title |
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| 顏珮珍,"摻雜PZT微粉的SiO2光波導材料製作與特性研究",國立清華大學碩士論文,2002年7月 * |
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