TWI387032B - Chip defects inspecting device and inspecting method thereof - Google Patents
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- 238000000034 method Methods 0.000 title claims description 26
- 230000007547 defect Effects 0.000 title description 28
- 235000012431 wafers Nutrition 0.000 claims description 82
- 238000001514 detection method Methods 0.000 claims description 32
- 238000007781 pre-processing Methods 0.000 claims description 8
- 238000012360 testing method Methods 0.000 claims description 7
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- 238000012545 processing Methods 0.000 description 7
- 238000007689 inspection Methods 0.000 description 5
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- 230000008901 benefit Effects 0.000 description 4
- VGRFVJMYCCLWPQ-UHFFFAOYSA-N germanium Chemical compound [Ge].[Ge] VGRFVJMYCCLWPQ-UHFFFAOYSA-N 0.000 description 4
- 238000010191 image analysis Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JOJYUFGTMHSFEE-YONYXQDTSA-M Cytarabine ocfosphate Chemical compound [Na+].O[C@H]1[C@H](O)[C@@H](COP([O-])(=O)OCCCCCCCCCCCCCCCCCC)O[C@H]1N1C(=O)N=C(N)C=C1 JOJYUFGTMHSFEE-YONYXQDTSA-M 0.000 description 1
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Description
本案係指一種檢測方法及其裝置，尤其是指用於檢測晶片瑕疵的裝置及其檢測方法。The present invention refers to a detecting method and a device thereof, and particularly to a device for detecting a wafer defect and a detecting method thereof.
隨著半導體製程技術的蓬勃發展，晶圓的尺寸越做越大，但晶片的尺寸卻越做越小，而佈置於其中的電子電路也益顯繁雜。若想要檢查這些晶片是否具有瑕疵，是不太可能以肉眼的方式進行檢視的，若採用人工方式進行晶片瑕疵檢視，不但過於緩慢，且不具有一致性，更無準確性可言。因此有相關的光學檢測儀器的發明以取代肉眼檢測，利用計算機對所擷取到的晶片影像進行影像分析，如此可降低進行晶片檢測所需要花費的時間和人力。With the rapid development of semiconductor process technology, the size of the wafer is getting bigger and bigger, but the size of the wafer is getting smaller and smaller, and the electronic circuit disposed therein is also complicated. If you want to check whether these wafers have flaws, it is unlikely to be viewed by the naked eye. If the wafer inspection is performed manually, it is not too slow, and it has no consistency and no accuracy. Therefore, the invention of the related optical detecting instrument replaces the naked eye detection, and the image analysis of the captured wafer image is performed by using a computer, thereby reducing the time and labor required for performing wafer inspection.
惟目前現存應用於半導體晶粒瑕疵檢測的各種光學檢測方法，絕大多數的方法均需先將待測晶片進行定位，然後再擷取晶片的影像，接著利用一般的影像處理演算法進行影像分析，透過影像分析找出晶片影像的異常處，從而達成檢測晶片瑕疵的功能，對一個完整的晶片瑕疵檢測程序而言，處理過程所需的工序繁多，當然就必須花費較多的處理時間。此外目前各種的晶片瑕疵檢測裝置或方法，多半無法快速進行待測晶片瑕疵態樣之分類。However, there are currently various optical detection methods for semiconductor germanium germanium detection. Most of the methods need to first locate the wafer to be tested, then capture the image of the wafer, and then use the general image processing algorithm for image analysis. Through the image analysis to find out the abnormality of the wafer image, so as to achieve the function of detecting the wafer defect, for a complete wafer defect detection process, the processing requires a lot of processes, of course, it takes a lot of processing time. In addition, various wafer defect detection devices or methods are currently unable to quickly classify the wafers to be tested.
職是之故，發明人鑑於習知技術中所產生之缺失，經過悉心試驗與研究，並一本鍥而不捨之精神，終構思出本案「晶片瑕疵檢測裝置及其檢測方法」，能夠克服上述習知技術中所存在的缺點，以下為本案之簡要說明。As a result of the job, the inventor, in view of the lack of the prior art, has carefully tested and researched, and has a perseverance, finally conceived the "wafer detection device and its detection method", which can overcome the above-mentioned conventional knowledge. The shortcomings of the technology, the following is a brief description of the case.
本發明乃將遙測影像物質分類之概念加入光學檢測，優點在於本發明擺脫習知上光學檢測方法需要先對待測晶片進行精密定位(positioning)之步驟，故可有效簡化檢測工序，節省處理時間，使得電腦計算量少，故相當適合應用在線上即時的晶粒瑕疵檢測，並可依晶片影像所具有的譜線特徵，而進一步進行待測晶片瑕疵態樣之分類。The invention adds the concept of classification of telemetry image materials to optical detection, and has the advantage that the invention can eliminate the conventional steps of precise positioning of the wafer to be tested, so that the detection process can be simplified and the processing time can be saved. The computer is less computationally intensive, so it is quite suitable for the application of on-line real-time grain defect detection, and can further classify the wafers to be tested according to the spectral characteristics of the wafer image.
根據本發明的構想，提出一種檢測裝置，其包括一待測晶片；一取像元件，用於取得該待測晶片的一影像；一運算元件，與該取像元件電連接，用於對該影像進行一前處理，並執行一正交子空間投影演算法以分析該影像，藉此確定該待測晶片為無瑕疵或有瑕疵，若為有瑕疵則依該待測晶片之一瑕疵態樣分類該待測晶片；及一輸出元件，與該運算元件電連接，用於輸出該待測晶片的檢測結果。According to the concept of the present invention, a detecting device is provided, which includes a wafer to be tested, an image capturing component for acquiring an image of the wafer to be tested, and an arithmetic component electrically connected to the image capturing component for Performing a pre-processing on the image and performing an orthogonal subspace projection algorithm to analyze the image, thereby determining whether the wafer to be tested is flawless or flawed, and if there is a flaw, according to one of the wafers to be tested Sorting the wafer to be tested; and an output component electrically connected to the computing component for outputting the detection result of the wafer to be tested.
較佳地，本發明所提供之該種檢測裝置，其中該前處理更包括步驟除去該影像中所包含的一背景影像；標定該待測晶片的輪廓；及正規化該影像。Preferably, the detecting device of the present invention further comprises the steps of: removing a background image included in the image; calibrating the contour of the wafer to be tested; and normalizing the image.
較佳地，本發明所提供之該種檢測裝置，其中該正規化步驟更包括步驟正規化該影像的灰度值以及大小。Preferably, the detecting device provided by the present invention, wherein the normalizing step further comprises the step of normalizing the gray value and the size of the image.
較佳地，本發明所提供之該種檢測裝置，其中該分析更包括步驟產生該影像的數個直方圖，其中該直方圖係選自灰度值直方圖、灰階度直方圖及亮度直方圖其中之一。Preferably, the detecting apparatus provided by the present invention, wherein the analyzing further comprises the step of generating a plurality of histograms of the image, wherein the histogram is selected from the group consisting of a gray value histogram, a gray scale histogram, and a brightness histogram. One of them.
較佳地，本發明所提供之該種檢測裝置，其中該分析更包括步驟依該等直方圖分類該待測晶片。Preferably, the detecting device of the present invention, wherein the analyzing further comprises the step of classifying the wafer to be tested according to the histograms.
較佳地，本發明所提供之該種檢測裝置，其中該輸出元 件係選自一CRT螢幕、一LCD螢幕及一投影機其中之一。Preferably, the detecting device provided by the present invention, wherein the output element The device is selected from one of a CRT screen, an LCD screen, and a projector.
較佳地，本發明所提供之該種檢測裝置，其中該運算元件係選自一工業用電腦、一桌上型電腦及一筆記型電腦其中之一。Preferably, the detecting device provided by the present invention, wherein the computing component is selected from one of an industrial computer, a desktop computer and a notebook computer.
根據本發明的構想，提出一種檢測裝置，其包括一取像元件，用於取得一待測晶片的一影像；及一運算元件，與該取像元件電連接，用於對該影像進行一前處理，並執行一正交子空間投影演算法以分析該影像，藉此確定該待測晶片為無瑕疵或有瑕疵，若為有瑕疵則依該待測晶片之一瑕疵態樣分類該待測晶片。According to the concept of the present invention, a detecting device is provided, which includes an image capturing component for acquiring an image of a wafer to be tested, and an arithmetic component electrically connected to the image capturing component for performing a front image on the image Processing and performing an orthogonal subspace projection algorithm to analyze the image, thereby determining whether the wafer to be tested is flawless or flawed, and if there is flaw, classifying the to be tested according to one of the wafers to be tested Wafer.
根據本發明的構想，提出一種檢測方法，包括步驟取得一待測晶片的一影像；對該影像進行一前處理；以一正交子空間投影演算法分析該影像；以及確定該待測晶片為無瑕疵或有瑕疵，若為有瑕疵則依該待測晶片之一瑕疵態樣分類該待測晶片。According to the concept of the present invention, a detection method is provided, including the steps of: obtaining an image of a wafer to be tested; performing a pre-processing on the image; analyzing the image by an orthogonal subspace projection algorithm; and determining that the wafer to be tested is There is no flaw or flaw, and if there is a flaw, the wafer to be tested is classified according to one of the wafers to be tested.
較佳地，本發明所提供之該種檢測方法，其中該前處理更包括步驟除去該影像中所包含的一背景影像；標定該待測晶片的輪廓；及正規化該影像。Preferably, the detecting method provided by the present invention, wherein the pre-processing further comprises the steps of removing a background image included in the image; calibrating the contour of the wafer to be tested; and normalizing the image.
較佳地，本發明所提供之該種檢測方法，其中該正規化步驟更包括步驟正規化該影像的灰度值以及大小。Preferably, the detecting method provided by the present invention, wherein the normalizing step further comprises the step of normalizing the gray value and the size of the image.
較佳地，本發明所提供之該種檢測方法，其中該分析更包括步驟產生該影像的數個直方圖，其中該直方圖係選自灰度值直方圖、灰階度直方圖及亮度直方圖其中之一。Preferably, the detection method provided by the present invention, wherein the analyzing further comprises the step of generating a plurality of histograms of the image, wherein the histogram is selected from a gray value histogram, a gray scale histogram, and a brightness histogram. One of them.
較佳地，本發明所提供之該種檢測方法，其中該分析更包括步驟依該等直方圖分類該待測晶片。Preferably, the detecting method provided by the present invention, wherein the analyzing further comprises the step of classifying the wafer to be tested according to the histograms.
一種實施如前述該種檢測方法的裝置。An apparatus for carrying out the detection method as described above.
本案將可由以下的實施例說明而得到充分瞭解，使得熟習本技藝之人士可以據以完成之，然本案之實施並非可由下列實施案例而被限制其實施態樣。The present invention will be fully understood by the following examples, so that those skilled in the art can do so, and the implementation of the present invention may not be limited by the following embodiments.
首先說明本發明所提出的晶片瑕疵檢測方法。本發明主要是結合正交子空間投影演算法(Orthogonal Subspace Projection Algorithm，OSPA)與晶片檢測。First, the wafer defect detecting method proposed by the present invention will be described. The invention mainly combines Orthogonal Subspace Projection Algorithm (OSPA) and wafer inspection.
請參照第一圖，係為本發明所提出的晶片瑕疵檢測方法的執行流程圖。首先，需確定匹配程度門檻值，提供一個模範晶粒(die)，以作為標準樣本(golden sample)，如步驟11所示；再提供具有代表性瑕疵的一個模範瑕疵晶粒，如步驟12所示；將模範晶粒及模範瑕疵晶粒的影像輸入OSPA而確定匹配程度門檻值T1，如步驟13所示，以上為確定匹配程度門檻值的程序，在第一圖中是以虛線框出的步驟；在匹配程度門檻值T1確定後，接著取得待測晶粒之影像，如步驟14所示；去除待測晶粒影像中的背景影像，如步驟15所示；再正規化待測晶粒影像的灰度值，如步驟16所示；再正規化待測晶粒影像的大小，如步驟17所示；將處理過後的待測晶粒影像以OSPA進行分析，如步驟18所示；經由OSPA的分析，可粹取出待測晶粒所具有的特徵，比較待測晶粒的特徵與模範晶粒的特徵，確認兩者間的匹配程度是否大於門檻值T1，如步驟19所示；若匹配程度大於門檻值T1，則表示此待測晶粒為無瑕疵，通過檢測，如步驟20所示；若匹 配程度小於門檻值T1，則表示此待測晶粒具有瑕疵，無法通過檢測，如步驟21所示；此時，OSPA將分析此待測晶粒影像的最大訊雜比，而確定此待測晶粒的瑕疵態樣，並依此瑕疵態樣對待測晶粒進行分類，如步驟22所示。依據以上流程對待測晶粒進行檢測，即完成本發明所提出之晶片瑕疵檢測。Please refer to the first figure, which is a flowchart of execution of the wafer defect detection method proposed by the present invention. First, a matching degree threshold is determined, and an exemplary die is provided as a golden sample, as shown in step 11, and an exemplary germanium die is provided, as shown in step 12. The method of determining the matching degree threshold T1 by inputting the image of the exemplary die and the exemplary die into the OSPA, as shown in step 13, the above procedure for determining the threshold of the matching degree is framed by a broken line in the first figure. After the matching threshold value T1 is determined, the image of the die to be tested is obtained, as shown in step 14; the background image in the image of the die to be measured is removed, as shown in step 15, and the die to be measured is normalized. The gray value of the image is as shown in step 16; the size of the image to be measured is normalized, as shown in step 17, and the processed image to be measured is analyzed by OFPA, as shown in step 18; The analysis of OSPA can extract the characteristics of the die to be tested, compare the characteristics of the die to be tested with the characteristics of the model grain, and confirm whether the matching degree between the two is greater than the threshold value T1, as shown in step 19; Matching is greater than Thresholds T1, the test indicates this grain is flawless, by detecting, as shown in step 20; if horses If the degree of distribution is less than the threshold value T1, it means that the die to be tested has defects and cannot pass the detection, as shown in step 21. At this time, the OSPA will analyze the maximum signal-to-noise ratio of the image to be tested, and determine the to-be-tested. The grain shape is measured, and the grains to be measured are classified according to the state, as shown in step 22. According to the above process, the test die is tested, that is, the wafer defect detection proposed by the present invention is completed.
本發明所採用的OSPA方法其原理為先建立特徵空間(eigenspace)，後將待測晶粒影像投影至此特徵空間之正交子空間內，以抑制此特徵空間之能量，之後再找出影像對於各個特徵之最大訊雜比(maximum SNR)，即可比對出與其最匹配之特徵進而完成特徵分類。OSPA的計算方法可略分為兩種：(1)使用一矩陣運算(投影運算)，以消除原始訊號中不欲被檢測出之物質特徵或雜訊之干擾，此過程稱為抑制干擾最佳化(optimal interference rejection process)；(2)使用一向量運算，增益訊號(經過第一步驟處理後)，以及欲被檢測出之物質特徵之訊雜比(maximize SNR)。The principle of the SPAC method used in the present invention is to first establish a feature space (eigenspace), and then project the image of the die to be measured into the orthogonal subspace of the feature space to suppress the energy of the feature space, and then find the image for The maximum SNR of each feature can be compared to the feature that best matches it to complete the feature classification. The calculation method of OSPA can be divided into two types: (1) using a matrix operation (projection operation) to eliminate the interference of material features or noises in the original signal that are not to be detected. This process is called suppressing interference best. (optimal interference rejection process); (2) using a vector operation, the gain signal (after the first step processing), and the signal-to-noise ratio (maximize SNR) of the material feature to be detected.
而本發明所提出的晶片瑕疵檢測裝置及其檢測方法在進行OSPA前，將先執行包括：自動除去影像中所包含的背景，然後自動找尋待測晶粒的輪廓並予以標定，並對待測物區域進行影像正規化，包含對此區域之灰度值以及影像大小之正規化等的影像前處理程序，接著才以模範晶粒及模範瑕疵晶粒的影像，並執行核心的OSPA而取得待測晶粒與模範晶粒間的匹配程度，可迅速有效判斷待測晶粒良窳。The wafer defect detecting device and the detecting method thereof according to the present invention, before performing the OSPA, perform the following steps: automatically removing the background included in the image, and then automatically finding and calibrating the contour of the die to be tested, and measuring the object to be tested The image is normalized in the region, including the image pre-processing program for the gray value of the region and the normalization of the image size, and then the image of the exemplary die and the die grain is executed, and the core OFSPA is executed to obtain the test. The degree of matching between the grain and the exemplary grain can quickly and effectively determine the grain to be measured.
由於本發明所提出的晶片瑕疵檢測裝置及其檢測方法，在其影像前處理程序時，當完成待測晶粒的取像後將自 動除去影像中所包含的背景，然後自動找尋待測晶粒的輪廓並予以標定，然後再進行後續的OSPA運算，故使用本發明所提出的晶片瑕疵檢測裝置及其檢測方法對待測晶粒進行檢測時，無須先對待測晶粒進行精密的定位，即可迅速有效判斷待測晶粒良窳。Since the wafer defect detecting device and the detecting method thereof according to the present invention are in the image pre-processing program, when the image of the die to be tested is completed, The background contained in the image is removed, and then the contour of the die to be tested is automatically searched and calibrated, and then the subsequent OFA operation is performed. Therefore, the wafer defect detecting device and the detecting method thereof are used to perform the die to be measured. During the inspection, the precise measurement of the die to be measured can be quickly and effectively determined.
接著說明本發明所提出的晶片瑕疵檢測裝置。請參照第二圖，係為本發明所提出的晶片瑕疵檢測裝置的示意圖。第二圖中的晶片瑕疵檢測裝置8包括了待測晶粒1、基座2A、輸送帶2B、取像元件3及運算元件4，其中取像元件3電連接於運算元件4；運算元件4可為工業用電腦、桌上型電腦、筆記型電腦或其他具有運算OSPA能力的計算裝置，在本實施例中係以筆記型電腦為範例；而基座2A基本上是一個用於承載待測晶粒1的平台，但是在實際的晶片生產線上，基座2A將是一個輸送帶2B(圖中繪製虛線者)。Next, the wafer defect detecting device proposed by the present invention will be described. Please refer to the second figure, which is a schematic diagram of the wafer defect detecting device proposed by the present invention. The wafer cassette detecting device 8 in the second figure includes a die 1 to be tested, a susceptor 2A, a conveyor belt 2B, an image taking element 3, and an arithmetic element 4, wherein the image capturing element 3 is electrically connected to the arithmetic element 4; the arithmetic element 4 It can be an industrial computer, a desktop computer, a notebook computer or other computing device with an operating OFPA capability. In this embodiment, a notebook computer is taken as an example; and the base 2A is basically used for carrying a test. The platform of the die 1, but on an actual wafer line, the pedestal 2A will be a conveyor belt 2B (the dotted line is drawn in the figure).
進行檢測時，將待測晶粒1放置於基座2A上，俟待測晶粒1靜止於基座2A或輸送帶2B上後，無須對待測晶粒1進行定位，即可直接利用取像元件3對待測晶粒1進行取像，並將待測晶粒影像傳輸至運算元件4，運算元件4對待測晶粒影像進行OSPA分析，並繪製這顆待測晶粒其影像的亮度直方圖，並與模範晶粒的亮度直方圖相比較，以確定這顆待測晶粒1是否具有瑕疵。When the detection is performed, the die 1 to be tested is placed on the pedestal 2A, and after the die 1 to be tested is stationary on the pedestal 2A or the conveyor 2B, the image 1 to be measured is not required to be positioned, and the image can be directly utilized. The component 3 performs image taking of the die 1 to be measured, and transmits the image of the die to be measured to the arithmetic component 4, and the computing component 4 performs OSPA analysis on the die image to be measured, and draws a luminance histogram of the image of the die to be tested. And comparing with the luminance histogram of the exemplary die to determine whether the die 1 to be tested has germanium.
請參照第三圖，係為本發明所提出的晶片瑕疵檢測裝置所繪製的檢測結果第一示意圖。第三圖中包括了四個子圖式，其中圖式P1為取像元件3所擷取的模範晶粒實體影像，圖式P2為取像元件3所擷取的待測晶粒1實體影像，圖式 P3為模範晶粒影像的亮度直方圖，圖式P4為待測晶粒影像的亮度直方圖。由第三圖中顯示出，由於圖式P3與圖式P4並不相似，即代表模範晶粒影像的亮度直方圖與瑕疵晶粒影像的亮度直方圖間並不相似，故代表這顆待測晶粒1可能具有瑕疵，可能是製造過程中產生的，也可能是製造完成後，因重大外力碰撞而受損，而根據待測晶粒的亮度直方圖態樣，則可進一步的對待測晶粒所具有的瑕疵態像進行分類，而製造者可再依不同的瑕疵分類，而對具有瑕疵的晶粒進行修復。更多待測晶粒所可能產生的直方圖態樣，請參照第四圖，係為本發明所提出的晶片瑕疵檢測裝置所繪製的檢測結果第二示意圖。Please refer to the third figure, which is a first schematic diagram of the detection results drawn by the wafer defect detecting device proposed by the present invention. The third figure includes four sub-patterns, wherein the pattern P1 is an exemplary die solid image captured by the image capturing component 3, and the pattern P2 is a physical image of the die 1 to be measured captured by the image capturing component 3, figure P3 is the luminance histogram of the exemplary crystal image, and the pattern P4 is the luminance histogram of the crystal image to be measured. As shown in the third figure, since the pattern P3 is not similar to the pattern P4, that is, the luminance histogram representing the exemplary grain image is not similar to the luminance histogram of the germanium grain image, so it represents the test to be tested. The grain 1 may have defects, which may be generated during the manufacturing process, or may be damaged by a large external force collision after the completion of the manufacturing, and may be further measured according to the brightness histogram of the grain to be tested. The morphological image of the granules is classified, and the manufacturer can further classify the ruthenium-containing grains according to different enthalpy classifications. For more histogram patterns that may be generated by the die to be tested, please refer to the fourth figure, which is a second schematic diagram of the detection results drawn by the wafer defect detecting device proposed by the present invention.
由於OSPA在進行影像分析時，會自動除去背景影像，故本發明所提出的晶片瑕疵檢測裝置及其檢測方法，在實施時並不需要先對待測晶粒進行精密的定位，此一優點將對晶片的品管效率或便利性帶來極大的好處，如：簡化檢測工序、節省處理時間、降低電腦計算量、極適用於即時(real time)的線上晶粒瑕疵檢測及降低製造成本等等的優點。而且本發明所提出的晶片瑕疵檢測裝置及其檢測方法，亦可利用待測晶粒的特徵直方圖，對待測晶粒所具有的瑕疵進行分類，如此能夠更便利晶片製造者回收具有瑕疵的待測晶粒，並依其所具有的瑕疵種類而進行修復，即為便利。Since the OSPA automatically removes the background image during image analysis, the wafer defect detecting device and the detecting method thereof provided by the present invention do not need to perform precise positioning of the die to be measured before implementation, and this advantage will be The quality or convenience of the quality of the wafer brings great benefits, such as: simplifying the inspection process, saving processing time, reducing the amount of computer calculations, being extremely suitable for real-time online chip defect detection and reducing manufacturing costs, etc. advantage. Moreover, the wafer defect detecting device and the detecting method thereof according to the present invention can also classify the defects of the die to be measured by using the characteristic histogram of the die to be tested, so that the wafer manufacturer can be more convenient to recycle the defects. It is convenient to measure the crystal grains and repair them according to the type of ruthenium they have.
本案實為一難得一見，值得珍惜的難得發明，惟以上所述者，僅為本發明之最佳實施例而已，當不能以之限定本發明所實施之範圍。即大凡依本發明申請專利範圍所作之均等變化與修飾，皆應仍屬於本發明專利涵蓋之範圍內，謹請 貴 審查委員明鑑，並祈惠准，是所至禱。The present invention is a rare and incomprehensible invention, and the above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto. That is, the equivalent changes and modifications made by the applicant in accordance with the scope of the patent application of the present invention should still fall within the scope of the patent of the present invention. The reviewer’s Mingjian, and praying for the right, is the prayer.
11‧‧‧提供一個模範晶粒11‧‧‧ Provide a model die
12‧‧‧提供一個模範瑕疵晶粒12‧‧‧ Provide a model 瑕疵 grain
13‧‧‧確定匹配程度門檻值T113‧‧‧Determining the matching threshold Threshold T1
14‧‧‧取得待測晶粒影像14‧‧‧Get the die image to be tested
15‧‧‧去除待測晶粒影像的背景15‧‧‧Removing the background of the grain image to be tested
16‧‧‧影像灰度值正規化16‧‧‧Image grayscale normalization
17‧‧‧影像大小正規化17‧‧‧Image size normalization
18‧‧‧OSPA分析18‧‧‧OSPA analysis
19‧‧‧確認待測晶粒是否與門檻值T1匹配>T119‧‧‧Confirm whether the die to be tested matches the threshold value T1>T1
20‧‧‧待測晶粒無瑕疵20‧‧‧The grain to be tested is flawless
21‧‧‧待測晶粒有瑕疵21‧‧‧The grain to be tested is flawed
22‧‧‧以瑕疵態樣分類待測晶粒22‧‧‧Classify the grain to be tested in a 瑕疵-like manner
8‧‧‧晶片瑕疵檢測裝置8‧‧‧Whip defect detection device
1‧‧‧待測晶粒1‧‧‧measured grain
2A‧‧‧基座2A‧‧‧Base
2B‧‧‧輸送帶2B‧‧‧ conveyor belt
3‧‧‧取像元件3‧‧‧Image taking components
4‧‧‧運算元件4‧‧‧Arithmetic components
P1‧‧‧模範晶粒實體影像P1‧‧‧ model grain entity image
P2‧‧‧待測晶粒1實體影像P2‧‧‧1 die image of the die to be tested
P3‧‧‧模範晶粒影像的亮度直方圖Brightness histogram of P3‧‧‧ model grain image
P4‧‧‧待測晶粒影像的亮度直方圖P4‧‧‧Brightness histogram of the grain image to be tested
第一圖 係為本發明所提出的晶片瑕疵檢測方法的執行流程圖；第二圖 係為本發明所提出的晶片瑕疵檢測裝置的示意圖；第三圖 係為本發明所提出的晶片瑕疵檢測裝置所繪製的檢測結果第一示意圖；及第四圖 係為本發明所提出的晶片瑕疵檢測裝置所繪製的檢測結果第二示意圖。The first figure is a flowchart for executing the wafer defect detection method proposed by the present invention; the second figure is a schematic diagram of the wafer defect detection device proposed by the present invention; and the third figure is the wafer defect detection device proposed by the present invention. The first schematic diagram of the test results drawn; and the fourth diagram is the second schematic diagram of the detection results drawn by the wafer defect detection device proposed by the present invention.
11‧‧‧提供一個模範晶粒11‧‧‧ Provide a model die
12‧‧‧提供一個模範瑕疵晶粒12‧‧‧ Provide a model 瑕疵 grain
13‧‧‧確定匹配程度門檻值T113‧‧‧Determining the matching threshold Threshold T1
14‧‧‧取得待測晶粒影像14‧‧‧Get the die image to be tested
15‧‧‧去除待測晶粒影像的背景15‧‧‧Removing the background of the grain image to be tested
16‧‧‧影像灰度值正規化16‧‧‧Image grayscale normalization
17‧‧‧影像大小正規化17‧‧‧Image size normalization
18‧‧‧OSPA分析18‧‧‧OSPA analysis
19‧‧‧確認待測晶粒是否與門檻值T1匹配>T119‧‧‧Confirm whether the die to be tested matches the threshold value T1>T1
20‧‧‧待測晶粒無瑕疵20‧‧‧The grain to be tested is flawless
21‧‧‧待測晶粒有瑕疵21‧‧‧The grain to be tested is flawed
22‧‧‧以瑕疵態樣分類待測晶粒22‧‧‧Classify the grain to be tested in a 瑕疵-like manner
Claims (13)
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| Joseph et al.,"Hyperspectral imageclassification and dimensionality reduction: an orthogonal subspace projection approach", IEEE Transactions on Geoscience and Remote Sensing, Col. 32, No. 4, pp. 779-785, July, 1994 * |
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