TWI386112B - Rf hollow cathode plasma generator - Google Patents
Rf hollow cathode plasma generator Download PDFInfo
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- TWI386112B TWI386112B TW097131946A TW97131946A TWI386112B TW I386112 B TWI386112 B TW I386112B TW 097131946 A TW097131946 A TW 097131946A TW 97131946 A TW97131946 A TW 97131946A TW I386112 B TWI386112 B TW I386112B
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- 239000007789 gas Substances 0.000 claims description 64
- 239000000498 cooling water Substances 0.000 claims description 39
- 239000012495 reaction gas Substances 0.000 claims description 20
- 238000009826 distribution Methods 0.000 claims description 13
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000011282 treatment Methods 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000009827 uniform distribution Methods 0.000 description 3
- 238000001994 activation Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000678 plasma activation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Chemical Vapour Deposition (AREA)
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Description
本發明係有關於一種射頻中空陰極電漿源產生裝置，尤指一種針對輸入之反應氣體流場作含二級以上流向分佈以增加氣體之均勻性，能以各種頻率之射頻電源(1~300MHz)引發電漿，經由中空陰極電極之孔洞增強電漿密度，並由均勻分佈之反應氣體帶出電漿集中往單方向擴散。The invention relates to a radio frequency hollow cathode plasma source generating device, in particular to an input RF gas flow field with a flow distribution of two or more stages to increase the uniformity of gas, and can be used for various frequency RF power sources (1~300MHz). The plasma is induced to enhance the plasma density through the pores of the hollow cathode electrode, and the plasma is concentrated by the uniformly distributed reaction gas to concentrate in one direction.
一般電漿源產生係將一平板電極，放入真空腔體(Chamber)抽至真空環境，並充入氬氣(Ar)或氧氣(O2 )等工作氣體後，由直流(DC)或脈衝(Pulsed)直流電源透過導線在平板電極上施加負電壓，在操作氣壓約為1×10－2 至數個托耳(Torr)間，此時部份電子會受到電場推力加速並碰撞中性氣體而發生游離，進而產生電漿。而射頻電漿源之產生，則係將真空腔體抽至真空環境，充入氬氣或氧氣等工作氣體後，於電極施加射頻頻率之交流電源，此時電子受交變電場加速取得能量並碰撞中性氣體發生游離，進而產生射頻電漿。Generally, the plasma source generation system puts a plate electrode into a vacuum chamber and draws it into a vacuum environment, and is filled with a working gas such as argon (Ar) or oxygen (O 2 ), and is subjected to direct current (DC) or pulse. (Pulsed) DC power supply applies a negative voltage to the plate electrode through the wire. The operating pressure is between 1×10 -2 and several Torr. At this time, some electrons are accelerated by the electric field and collide with the neutral gas. The liberation occurs, which in turn produces plasma. The generation of the RF plasma source is to evacuate the vacuum chamber to a vacuum environment, and after charging a working gas such as argon or oxygen, an alternating current power source of RF frequency is applied to the electrode, and the electron is accelerated by the alternating electric field to obtain energy. And the collision of neutral gas occurs, which in turn produces radio frequency plasma.
電漿為一種離子化之氣體，外加電源之金屬電極因德拜屏蔽(Debye shielding)效應，因此電導體電場於電漿中強度係隨空間距離呈指數下降形成一電漿鞘，而電漿分佈為一沿著電極面向四周擴散，而該真空腔體中之電子在電漿鞘中受到此電場推力加速而獲得能量，並 在真空腔體內四處擴散，於擴散行進中與各種粒子發生碰撞，其中帶能量之電子在碰撞中性氣體分子後會發生游離反應，進而產生更多離子－電子，以維持電漿狀態。然而，此種電漿源電漿分佈廣且分散，其平均電漿密度低，因此大幅降低其電漿應用效能。而中空陰極電漿則係利用電極孔洞內帶正電荷之離子及高能二次電子在撞擊孔內壁面後來回反彈與中性氣體分子碰撞後再產生二次電子，進而發生游離反應，由於其係在孔洞中來回反彈增加撞擊機會而更容易引發電漿。一般引入氣體之分佈會影響電漿均勻性，而大部分針對引入氣體之氣管內不同位置因分壓不同而開不同孔徑之出氣孔或採用較大口徑之氣管內開等徑微小孔洞，因氣壁每點分壓約相同，因此出氣量亦相同。The plasma is an ionized gas, and the metal electrode of the external power source is subjected to the Debye shielding effect. Therefore, the electric field of the electric conductor in the plasma decreases exponentially with space distance to form a plasma sheath, and the plasma distribution Diffusion of the electrons in the vacuum chamber in the plasma sheath to obtain energy, and the electrons in the vacuum chamber are accelerated by the electric field thrust, and It diffuses around the vacuum chamber and collides with various particles during the diffusion process. The electrons with energy collide with the neutral gas molecules to generate a free reaction, which generates more ion-electrons to maintain the plasma state. However, such plasma source plasma is widely distributed and dispersed, and its average plasma density is low, thereby greatly reducing its plasma application efficiency. The hollow cathode plasma uses the positively charged ions in the electrode hole and the high-energy secondary electrons to rebound back and forth after hitting the inner wall of the hole to collide with the neutral gas molecules to generate secondary electrons, thereby generating a free reaction due to the system. Bounce back and forth in the hole to increase the chance of impact and more easily cause plasma. Generally, the distribution of the introduced gas will affect the uniformity of the plasma, and most of the different positions in the gas pipe for introducing the gas may be opened by different pore sizes due to different partial pressures or by using a larger diameter of the gas pipe to open the same diameter micro hole, due to gas The partial pressure at each point of the wall is about the same, so the amount of gas is also the same.
在美國專利第4,767,641號內容所述，運用電源驅動該真空腔體內之中空陰極電極讓其產生電漿，其中空陰極結構係屬上述專利所述之各種方型、六角型、長方型型態。In the U.S. Patent No. 4,767,641, the utility model uses a power source to drive a hollow cathode electrode in the vacuum chamber to generate plasma. The hollow cathode structure belongs to various square, hexagonal and rectangular shapes described in the above patent. .
在中華民國專利公告第259506號「以氣體分配孔設計控制電漿均勻度」，其係以射頻電源產生電漿，運用孔洞型狀及位置來提高氣體分佈之密度。然而，此種方式必須針對單一結構作設計，且必須了解氣體流場分佈才能作很好之氣體均勻分佈。In the Republic of China Patent Bulletin No. 259506 "Designing Control of Plasma Uniformity by Gas Distribution Holes", it uses a radio frequency power source to generate plasma, and uses the hole shape and position to increase the density of gas distribution. However, this approach must be designed for a single structure, and it must be understood that the gas flow field distribution is a good gas uniform distribution.
雖然上述之習知技術可用射頻電源驅動產生電漿，但不易使氣體達到均勻分佈並帶出電漿集中往單方向擴散，故，一般習用者係無法符合使用者於實際使用時 之所需。Although the above-mentioned conventional technology can be driven by a radio frequency power source to generate plasma, it is not easy to make the gas evenly distributed and bring out the plasma concentration to spread in one direction. Therefore, the general practitioner cannot meet the user's actual use. Needed.
本發明之主要目的係在於，克服習知技藝所遭遇之上述問題並提供一種針對輸入之反應氣體流場作含二級以上流向分佈以增加氣體之均勻性，能以各種頻率之射頻電源引發電漿，將電漿經由中空陰極電極之孔洞增強電漿密度，並由均勻分佈之反應氣體帶出電漿集中往單方向擴散。The main object of the present invention is to overcome the above problems encountered in the prior art and to provide a flow distribution of the reaction gas flow field with a flow rate of two or more to increase the uniformity of the gas, and to generate electricity at a radio frequency power source of various frequencies. The slurry enhances the plasma density through the pores of the hollow cathode electrode, and the plasma is concentrated by the uniformly distributed reaction gas to concentrate in one direction.
本發明之次要目的係在於，其電源之引入線及冷卻水係由大氣端直接供給真空中之中空陰極電極，並經由數個電源點之輸入電極減少駐波現象而降低在真空中之放電相互干擾，可增強電漿之密度及均勻性，並在含有冷卻設計下，具有高功率及較長之運作時間。The secondary object of the present invention is that the power supply lead-in and the cooling water are directly supplied from the atmospheric end to the hollow cathode electrode in the vacuum, and the standing wave is reduced through the input electrodes of the plurality of power points to reduce the discharge in the vacuum. Mutual interference enhances the density and uniformity of the plasma and provides high power and long operating time with a cooling design.
本發明之另一要目的係在於，射頻中空陰極電漿源產生裝置可適用於高分子材料電漿活化處理製程、各式電漿輔助式化學氣相沈積(Plasma Enhanced Chemical Vapor Deposition,PECVD)鍍膜處理及電漿表面處理應用，以大量提昇處理速率及均勻性。Another object of the present invention is that the radio frequency hollow cathode plasma source generating device can be applied to a polymer material plasma activation treatment process and various plasma enhanced chemical vapor deposition (PECVD) coatings. Treatment and plasma surface treatment applications to increase processing rate and uniformity in large quantities.
為達以上之目的，本發明係一種射頻中空陰極電漿源產生裝置，該裝置係為一真空腔體，其內部係由一中空陰極電極、至少二個以上之氣室、一氣體導管、一冷卻水導管及複數個輸入電極所組成。該中空陰極電極係包含複數個孔洞，且該中空陰極電極之每一孔洞下方係含有一微小之出氣孔；該氣室係可為雙層至多層設置於 該中空陰極電極下側，且每一氣室係含有複數個出氣孔，而緊鄰該中空陰極電極下側之氣室，其每一出氣孔係與該中空陰極電極之每一孔洞相對應，可用以將氣體均壓分佈至該中空陰極電極之每一孔洞；該氣體導管係設置於該真空腔體內用以導引一產生射頻電漿之反應氣體進入該氣室；該冷卻水導管係設置於該中空陰極電極兩側，並於一端連接有一冷卻水輸入管路，另一端則連接有一冷卻水輸出管路，且該冷卻水輸入管路及該冷卻水輸出管路係為該中空陰極電極之一部分，可用以導引一冷卻水至該中空陰極電極週邊；以及該些輸入電極係設置於該中空陰極電極週邊，且各輸入電極係與該氣體導管及該冷卻水導管經該真空腔體之腔壁與該中空陰極電極連接，並與大地絕緣。藉此，使該反應氣體經該氣體導管進入一氣室再由微小之出氣孔進入另一氣室及其出氣孔而將反應氣體均勻釋出，於其中，該氣室係可以雙氣室至多氣室運作，以達成氣體分佈均勻之目的，並能以射頻電源引發電漿，將電漿集中往單方向擴散，並由均勻分佈之氣體將該電漿帶到孔洞外之待處理工件附近而達到電漿處理及鍍膜之目的。For the purpose of the above, the present invention is a radio frequency hollow cathode plasma source generating device, which is a vacuum chamber having a hollow cathode electrode, at least two air chambers, a gas conduit, and a gas chamber. A cooling water conduit and a plurality of input electrodes are formed. The hollow cathode electrode includes a plurality of holes, and each hole of the hollow cathode electrode has a tiny air outlet hole; the air chamber can be disposed in a double layer to a plurality of layers. The hollow cathode electrode is on the lower side, and each of the gas chambers comprises a plurality of air outlet holes, and each of the air outlets adjacent to the air chamber of the hollow cathode electrode corresponds to each hole of the hollow cathode electrode, and can be used. And distributing a gas pressure to each hole of the hollow cathode electrode; the gas conduit is disposed in the vacuum chamber for guiding a reaction gas for generating radio frequency plasma into the air chamber; the cooling water conduit is disposed on the hole a cooling cathode input line is connected to one end of the hollow cathode electrode, and a cooling water output line is connected to the other end, and the cooling water input line and the cooling water output line are part of the hollow cathode electrode And can be used to guide a cooling water to the periphery of the hollow cathode electrode; and the input electrodes are disposed around the hollow cathode electrode, and the input electrodes and the gas conduit and the cooling water conduit pass through the cavity of the vacuum chamber The wall is connected to the hollow cathode electrode and insulated from the ground. Thereby, the reaction gas is introduced into a gas chamber through the gas conduit and then enters another gas chamber and its air outlet through a small air outlet to uniformly release the reaction gas, wherein the gas chamber can be a double chamber to a multiple chamber. Operation, in order to achieve uniform gas distribution, and can initiate plasma with RF power source, concentrate the plasma in a single direction, and bring the plasma to the vicinity of the workpiece to be treated by the uniformly distributed gas to reach electricity The purpose of slurry treatment and coating.
請參閱『第1圖~第3圖』所示，係分別為本發明之結構剖面示意圖、本發明之俯視結構示意圖及本發明之側視結構示意圖。如圖所示：本發明係一種射頻中空陰極電漿源產生裝置1，該射頻中空陰極電漿源產生裝 置1係為一真空腔體(Chamber)，其內部係由一中空陰極電極11、至少二個以上之氣室12、一氣體導管13、一冷卻水導管14及複數個輸入電極15所組成。Please refer to FIG. 1 to FIG. 3 for a schematic cross-sectional view of the structure of the present invention, a schematic plan view of the present invention, and a side view of the present invention. As shown in the figure: the present invention is a radio frequency hollow cathode plasma source generating device 1 which is equipped with a radio frequency hollow cathode plasma source. The system is composed of a hollow cathode electrode 11, at least two or more gas chambers 12, a gas conduit 13, a cooling water conduit 14, and a plurality of input electrodes 15.
該中空陰極電極11係包含複數個孔洞111，且該中空陰極電極11之每一孔洞111下方係含有一微小之出氣孔121。The hollow cathode electrode 11 includes a plurality of holes 111, and each of the holes 111 of the hollow cathode electrode 11 has a minute air outlet 121.
該氣室12係可為雙層至多層設置於該中空陰極電極11下側，且每一氣室12a、12b係含有複數個出氣孔121a、121b，而緊鄰該中空陰極電極11下側之氣室12a，其每一出氣孔121a係與該中空陰極電極11之每一孔洞111相對應，可用以將氣體均壓分佈至該中空陰極電極11之每一孔洞111。The air chamber 12 may be disposed on the lower side of the hollow cathode electrode 11 in a double layer to a plurality of layers, and each of the air chambers 12a, 12b includes a plurality of air outlets 121a, 121b, and a gas chamber adjacent to the lower side of the hollow cathode electrode 11 12a, each of the air holes 121a corresponds to each of the holes 111 of the hollow cathode electrode 11, and may be used to distribute a gas pressure to each of the holes 111 of the hollow cathode electrode 11.
該氣體導管13係設置於該真空腔體內用以導引一產生射頻電漿之反應氣體進入該氣室12。The gas conduit 13 is disposed in the vacuum chamber for guiding a reaction gas that generates radio frequency plasma into the gas chamber 12.
該冷卻水導管14係設置於該中空陰極電極11兩側，並於一端連接有一冷卻水輸入管路141，另一端則連接有一冷卻水輸出管路142，且該冷卻水輸入管路141及該冷卻水輸出管路142係為該中空陰極電極11之一部分，可用以導引一冷卻水至該中空陰極電極11週邊。The cooling water conduit 14 is disposed on both sides of the hollow cathode electrode 11, and has a cooling water input line 141 connected to one end, and a cooling water output line 142 connected to the other end, and the cooling water input line 141 and the The cooling water output line 142 is a portion of the hollow cathode electrode 11 and can be used to guide a cooling water to the periphery of the hollow cathode electrode 11.
該些輸入電極15係設置於該中空陰極電極11週邊，且各輸入電極15係與該氣體導管13及該冷卻水導管14經該真空腔體之腔壁1a(如第2圖所示)與該中空陰極電極11連接，並與大地絕緣。以上所述，係構成一全新之射頻中空陰極電漿源產生裝置1。The input electrodes 15 are disposed around the hollow cathode electrode 11, and the input electrodes 15 and the gas conduit 13 and the cooling water conduit 14 pass through the cavity wall 1a of the vacuum chamber (as shown in FIG. 2). The hollow cathode electrode 11 is connected and insulated from the ground. As described above, a novel radio frequency hollow cathode plasma source generating device 1 is constructed.
當本發明於運用時，該氣室12係可為雙氣室至多氣室運作，使本發明可對反應氣體流場之分佈分為二層至多層次輸入；同時，並可利用該冷卻水輸出入管路142、141為該中空陰極電極11之一部分，且於該中空陰極電極11週邊增加多數之輸入電極15，藉此以促使反應氣體可更均勻分佈於中空陰極電極表面，進而達到電漿及反應自由基均勻分佈之目的。於一較佳實施例中，該射頻中空陰極電漿源產生裝置1係以1~300兆赫茲(MHz)之射頻(RF)電源驅動該真空腔體內之中空陰極電極11產生電漿，其運作過程係將一反應氣體由該真空腔體之氣體入口處輸入，經該氣體導管13進入至第二氣室12b均壓後由其內含之微小出氣孔121b均勻分佈該反應氣體至第一氣室12a中，再經由該第一氣室12a內微小之出氣孔121a更均勻分佈該反應氣體至該中空陰極電極11每一個孔洞111內，因此，經過本實施例以雙氣室均壓分佈該反應氣體後，可使該中空陰極電極11之每一個孔洞111得到均勻氣體量，以供給產生電漿所需之均勻反應氣體。於啟動該射頻電源後在該中空陰極電極11之孔洞111產生之電漿可均勻分佈於每一個孔洞111內，並可由每一個孔洞111內釋出之反應氣體將該產生之電漿帶出且集中往單方向擴散，再由均勻分佈之反應氣體將該電漿帶到該孔洞111外之待處理工件附近以達到電漿處理及鍍膜之目的。其中，並利用該冷卻水輸入管路141引入冷卻水，經該冷卻水導管14導引至 該中空陰極電極11兩側，最後再由該冷卻水輸出管路142引出，使該中空陰極電極11可以冷卻並維持於一定溫度，進而可在無過溫問題下能承受較大功率以增加電漿密度；同時，由於本發明係採用具有孔洞之極板作為中空陰極電極，因此係可增加電子碰撞機會以產生較高之電漿密度，以達到增加鍍膜時之高效率。When the invention is in use, the plenum 12 can operate from a dual plenum to a multiple plenum, so that the present invention can divide the distribution of the reaction gas flow field into two layers to multiple levels of input; at the same time, the cooling water output can be utilized. The inlet conduits 142, 141 are part of the hollow cathode electrode 11, and a plurality of input electrodes 15 are added around the hollow cathode electrode 11, thereby promoting a more uniform distribution of the reaction gas on the surface of the hollow cathode electrode, thereby achieving plasma and The purpose of uniform distribution of reactive radicals. In a preferred embodiment, the RF hollow cathode plasma source generating device 1 drives a hollow cathode electrode 11 in the vacuum chamber to generate plasma by a radio frequency (RF) power source of 1 to 300 megahertz (MHz). The process is to input a reaction gas from the gas inlet of the vacuum chamber, and after the gas conduit 13 enters the second gas chamber 12b, the pressure is evenly distributed, and the reaction gas is uniformly distributed to the first gas by the tiny air outlet 121b contained therein. In the chamber 12a, the reaction gas is more uniformly distributed into each of the holes 111 of the hollow cathode electrode 11 via the minute air holes 121a in the first gas chamber 12a. Therefore, the double gas chamber pressure distribution is used in the embodiment. After the reaction gas, each of the holes 111 of the hollow cathode electrode 11 can be supplied with a uniform gas amount to supply a uniform reaction gas required for generating plasma. The plasma generated in the hole 111 of the hollow cathode electrode 11 after the activation of the RF power source can be evenly distributed in each of the holes 111, and the generated plasma can be taken out by the reaction gas released in each of the holes 111. The radiation is concentrated in a single direction, and the plasma is evenly distributed to the vicinity of the workpiece to be treated outside the hole 111 for plasma treatment and coating. Wherein, cooling water is introduced by the cooling water input line 141, and is guided to the cooling water conduit 14 to The two sides of the hollow cathode electrode 11 are finally led out by the cooling water output line 142, so that the hollow cathode electrode 11 can be cooled and maintained at a certain temperature, thereby being able to withstand higher power to increase electricity without over-temperature problems. At the same time, since the present invention employs a plate having a hole as a hollow cathode electrode, it is possible to increase the chance of electron collision to generate a higher plasma density to achieve high efficiency in increasing the plating.
如是，本裝置之特色係在於針對輸入之反應氣體流場可作含二級以上流向分佈，使氣場可更均勻分佈於中空陰極電極表面，不僅可用於任何頻率，更適合各種頻率之射頻電源應用。此射頻中空陰極電漿源其電源之引入線及冷卻水係由大氣下直接進入真空中之中空陰極電極，並經由數個電源點之輸入電極減少駐波現象而降低在真空中之放電相互干擾，可增強電漿之密度及均勻性，再加上含有冷卻設計，因此亦具有高功率及較長之運作時間，可適用於高分子材料電漿活化處理製程、各式電漿輔助式化學氣相沈積(plasma Enhanced Chemical Vapor Deposition,PECVD)鍍膜處理及電漿表面處理應用，以大量提昇處理速率及均勻性。If so, the device is characterized in that the input reaction gas flow field can be distributed with a flow distribution of two or more stages, so that the gas field can be more evenly distributed on the surface of the hollow cathode electrode, and can be used not only for any frequency, but also for RF power sources of various frequencies. application. The RF hollow cathode plasma source has a power supply lead-in line and a cooling water system which directly enters the hollow cathode electrode in the vacuum from the atmosphere, and reduces the standing wave phenomenon through the input electrodes of the plurality of power source points to reduce the mutual interference of the discharge in the vacuum. It can enhance the density and uniformity of plasma, and it also has a cooling design, so it also has high power and long operating time. It can be applied to the polymer material activation treatment process and various plasma-assisted chemical gases. Plasma Enhanced Chemical Vapor Deposition (PECVD) coating treatment and plasma surface treatment applications have greatly improved processing rate and uniformity.
綜上所述，本發明係一種射頻中空陰極電漿源產生裝置，可有效改善習用之種種缺點，係針對輸入之反應氣體流場作含二級以上流向分佈，能適合各種頻率之射頻電源應用，使電漿經由中空陰極電極之孔洞集中往單方向擴散，亦可減少駐波現象，降低在真空中之放電相互干擾，可均勻分佈電漿及反應自由基，增強電漿之密度及均勻性，並具有高功率及較長之運作時間，可適用 於高分子材料電漿活化處理製程、各式PECVD鍍膜處理及電漿表面處理應用，以大量提昇處理速率及均勻性，進而使本發明之產生能更進步、更實用、更符合使用者之所須，確已符合發明專利申請之要件，爰依法提出專利申請。In summary, the present invention is a radio frequency hollow cathode plasma source generating device, which can effectively improve various disadvantages of the conventional use, and is suitable for RF power supply applications of various frequencies for the input reaction gas flow field with a flow distribution of more than two stages. The plasma is concentrated in a single direction through the pores of the hollow cathode electrode, and the standing wave phenomenon can be reduced, the discharge in the vacuum can be reduced, the plasma and the reaction radical can be uniformly distributed, and the density and uniformity of the plasma can be enhanced. With high power and long operating time, applicable In the polymer material plasma activation treatment process, various PECVD coating treatments and plasma surface treatment applications, the treatment rate and uniformity are greatly improved, thereby making the invention more progressive, practical and more suitable for the user. It must have met the requirements of the invention patent application and filed a patent application in accordance with the law.
惟以上所述者，僅為本發明之較佳實施例而已，當不能以此限定本發明實施之範圍；故，凡依本發明申請專利範圍及發明說明書內容所作之簡單的等效變化與修飾，皆應仍屬本發明專利涵蓋之範圍內。However, the above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto; therefore, the simple equivalent changes and modifications made in accordance with the scope of the present invention and the contents of the invention are modified. All should remain within the scope of the invention patent.
射頻中空陰極電漿源產生裝置‧‧‧1RF hollow cathode plasma source generator ‧‧1
腔壁‧‧‧1aWall ‧‧1a
中空陰極電極‧‧‧11Hollow cathode electrode ‧‧11
孔洞‧‧‧111Hole ‧‧11111
氣室‧‧‧12、12a、12bAir chamber ‧‧12,12a,12b
出氣孔‧‧‧121、121a、121bVents ‧‧121, 121a, 121b
氣體導管‧‧‧13Gas conduit ‧‧13
冷卻水導管‧‧‧14Cooling water pipe ‧‧14
冷卻水輸入管路‧‧‧141Cooling water input line ‧‧‧141
冷卻水輸出管路‧‧‧142Cooling water output line ‧‧‧142
輸入電極‧‧‧15Input electrode ‧‧15
第1圖，係本發明之結構剖面示意圖。Fig. 1 is a schematic cross-sectional view showing the structure of the present invention.
第2圖，係本發明之俯視結構示意圖。Fig. 2 is a schematic plan view showing the structure of the present invention.
第3圖，係本發明之側視結構示意圖。Figure 3 is a schematic side view of the structure of the present invention.
孔洞‧‧‧111Hole ‧‧11111
氣室‧‧‧12、12a、12bAir chamber ‧‧12,12a,12b
出氣孔‧‧‧121、121a、121bVents ‧‧121, 121a, 121b
氣體導管‧‧‧13Gas conduit ‧‧13
冷卻水導管‧‧‧14Cooling water pipe ‧‧14
冷卻水輸入管路‧‧‧141Cooling water input line ‧‧‧141
冷卻水輸出管路‧‧‧142Cooling water output line ‧‧‧142
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| TW363332B (en) * | 1996-07-10 | 1999-07-01 | Cvc Products Inc | Apparatus and method for multi-zone high-density inductively-coupled plasma generation |
| TW436863B (en) * | 1999-02-12 | 2001-05-28 | Applied Materials Inc | High-density plasma source for ionized metal |
| KR20030043109A (en) * | 2001-11-27 | 2003-06-02 | 준 신 이 | Method of silicon dry etching using hollow cathode plasma |
| TWI222248B (en) * | 2000-10-16 | 2004-10-11 | Cymer Inc | Extreme ultraviolet light source |
| TWM333417U (en) * | 2008-01-03 | 2008-06-01 | Creating Nano Technologies Inc | Plasma cleaning apparatus |
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| TW363332B (en) * | 1996-07-10 | 1999-07-01 | Cvc Products Inc | Apparatus and method for multi-zone high-density inductively-coupled plasma generation |
| TW436863B (en) * | 1999-02-12 | 2001-05-28 | Applied Materials Inc | High-density plasma source for ionized metal |
| TWI222248B (en) * | 2000-10-16 | 2004-10-11 | Cymer Inc | Extreme ultraviolet light source |
| KR20030043109A (en) * | 2001-11-27 | 2003-06-02 | 준 신 이 | Method of silicon dry etching using hollow cathode plasma |
| TWM333417U (en) * | 2008-01-03 | 2008-06-01 | Creating Nano Technologies Inc | Plasma cleaning apparatus |
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