TWI383038B - Thermal interface material, electronic device with the same, and preparation method thereof - Google Patents
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本發明涉及一種熱介面材料,具該熱介面材料之電子裝置及該電子裝置之製備方法。 The invention relates to a thermal interface material, an electronic device with the thermal interface material and a preparation method of the electronic device.
近年來,隨著半導體器件集成工藝之快速發展,半導體器件之集成化程度越來越高,器件體積變得越來越小,然,半導體器件體積之減小也提高了其對散熱之要求。為滿足該半導體器件對散熱之需要,風扇散熱、水冷輔助散熱及熱管散熱等各種散熱方式被廣泛運用,並取得一定之散熱效果。但因散熱裝置與熱源(半導體集成器件,如CPU)之接觸介面不平整,實際接觸面積一般不到總面積之2%,因此從根本上影響熱源向散熱裝置傳遞熱量之效果。為了增加熱源與散熱裝置兩個介面之間之接觸面積,通常於熱源與散熱裝置之間填加一導熱係數較高之熱介面材料(Thermal Interface Materials),用於填補熱源與散熱裝置接觸時產生之微空隙及表面凹凸不平之孔洞,增加熱源與散熱裝置兩個介面之接觸面積,減少熱傳遞之阻抗,改善熱源與散熱裝置間之熱傳遞效果。 In recent years, with the rapid development of semiconductor device integration processes, the integration of semiconductor devices has become higher and higher, and the device size has become smaller and smaller. However, the reduction in the size of semiconductor devices has also increased their requirements for heat dissipation. In order to meet the heat dissipation requirements of the semiconductor device, various heat dissipation methods such as fan heat dissipation, water cooling auxiliary heat dissipation and heat pipe heat dissipation are widely used, and a certain heat dissipation effect is obtained. However, because the contact interface between the heat sink and the heat source (semiconductor integrated device, such as the CPU) is not flat, the actual contact area is generally less than 2% of the total area, thus fundamentally affecting the effect of the heat source transferring heat to the heat sink. In order to increase the contact area between the heat source and the heat sink, a thermal interface material (Thermal Interface Materials) with a high thermal conductivity is usually added between the heat source and the heat sink to fill the heat source and the heat sink. The micro-voids and the uneven holes on the surface increase the contact area between the heat source and the heat sink, reduce the impedance of heat transfer, and improve the heat transfer between the heat source and the heat sink.
傳統之熱介面材料係通過於如矽膠、橡膠之類之柔性基體中添加一些具有優異導熱性能之導熱顆粒如氧化矽、銀或其他金屬等來形成複合材料。奈米碳管沿其軸向方向具有極高之導熱係數,使其成為最具潛力之熱介面材料之一。2004年9月16日申請並於2005年6月2日公開之 第2005/0116336 A1號美國專利申請公開了一種熱介面材料,該熱介面材料將複數奈米碳管均勻分散於一柔性基體中,該複數奈米碳管相互搭接於熱源與散熱裝置之間形成複數導熱通道。 Conventional thermal interface materials are formed by adding some thermally conductive particles such as yttria, silver or other metals having excellent thermal conductivity to a flexible substrate such as silicone or rubber. The carbon nanotubes have a very high thermal conductivity along their axial direction, making them one of the most promising thermal interface materials. Applied on September 16, 2004 and published on June 2, 2005 US Patent Application Publication No. 2005/0116336 A1 discloses a thermal interface material that uniformly disperses a plurality of carbon nanotubes in a flexible matrix that overlaps each other between a heat source and a heat sink A plurality of heat conduction channels are formed.
奈米碳管軸向方向之導熱係數較高,但其徑向方向之導熱係數極低,因此,由該複數奈米碳管形成之導熱通道中,其熱傳遞路徑之長度取決於相互搭接成該一導熱通道之所有奈米碳管之軸向長度之和。而該複數奈米碳管於柔性基體中之方向難以控制,該奈米碳管軸向方向與熱傳遞方向一致之概率很小,因此,需要較多之奈米碳管搭接才能形成一導熱通道,從而造成該熱介面材料之傳熱路徑較長;且,由於奈米碳管之尺寸較小,相互搭接之兩個奈米碳管之間之熱阻較大,無法有效利用奈米碳管之導熱性能。因此,該熱介面材料之導熱性能還有待進一步提高。 The thermal conductivity of the carbon nanotube in the axial direction is relatively high, but the thermal conductivity in the radial direction is extremely low. Therefore, in the heat conduction channel formed by the plurality of carbon nanotubes, the length of the heat transfer path depends on the mutual overlap. The sum of the axial lengths of all the carbon nanotubes of the heat conduction channel. The direction of the plurality of carbon nanotubes in the flexible substrate is difficult to control, and the probability that the axial direction of the carbon nanotubes coincides with the heat transfer direction is small. Therefore, more carbon nanotubes are required to form a heat conduction. Channel, which causes the heat transfer path of the thermal interface material to be long; and, because of the small size of the carbon nanotubes, the thermal resistance between the two carbon nanotubes overlapping each other is large, and the nanometer cannot be effectively utilized. The thermal conductivity of carbon tubes. Therefore, the thermal conductivity of the thermal interface material needs to be further improved.
有鑒於此,提供一種導熱性能更佳之熱介面材料,具該熱介面材料之電子裝置及該電子裝置之製備方法實為必要。 In view of the above, a thermal interface material having better thermal conductivity is provided, and an electronic device having the thermal interface material and a preparation method of the electronic device are necessary.
一種熱介面材料,其包括一柔性基體及分佈於該柔性基體中之複數複合導熱顆粒。該複合導熱顆粒包括一金屬顆粒及至少一奈米碳管複合於該金屬顆粒中。 A thermal interface material comprising a flexible substrate and a plurality of composite thermally conductive particles distributed in the flexible substrate. The composite thermally conductive particles comprise a metal particle and at least one carbon nanotube is composited in the metal particle.
一種熱介面材料,其包括一柔性基體及分佈於該柔性基體中之複數金屬顆粒。至少部分金屬顆粒中每一第一金屬顆粒進一步包括至少一奈米碳管複合於該第一金屬顆 粒中形成複數複合導熱顆粒。 A thermal interface material comprising a flexible substrate and a plurality of metal particles distributed in the flexible substrate. Each of the at least a portion of the metal particles further includes at least one carbon nanotube composited to the first metal A plurality of composite thermally conductive particles are formed in the granules.
一種電子裝置,其包括一熱源及一設置於該熱源表面之熱介面材料。該熱介面材料包括一柔性基體及分佈於該柔性基體中之複數第一金屬顆粒。至少部分該第一金屬顆粒中每一第一金屬顆粒進一步包括至少一奈米碳管複合於該第一金屬顆粒中形成複數複合導熱顆粒。 An electronic device includes a heat source and a thermal interface material disposed on a surface of the heat source. The thermal interface material includes a flexible substrate and a plurality of first metal particles distributed in the flexible substrate. At least a portion of each of the first metal particles further includes at least one carbon nanotube composited in the first metal particles to form a plurality of composite thermally conductive particles.
一種電子裝置之製備方法,其包括如下步驟:提供一熱介面材料預製體及一熱源,該熱源具有一使該熱源不至於過熱損壞之保護溫度,該熱介面材料預製體包括一柔性基體、填充於該柔性基體中之複數第二金屬顆粒及複數奈米碳管,該第二金屬顆粒粒徑小於100奈米,且該第二金屬顆粒於該粒徑下之熔融溫度小於該保護溫度;將該熱介面材料預製體設置於該熱源表面;加熱該熱介面材料預製體,使該第二金屬顆粒熔融團聚;冷卻該熱介面材料預製體,形成熱介面材料於熱源表面。 A method of fabricating an electronic device, comprising the steps of: providing a thermal interface material preform and a heat source having a protection temperature that prevents the heat source from being damaged by overheating, the thermal interface material preform comprising a flexible substrate, filling a plurality of second metal particles and a plurality of carbon nanotubes in the flexible substrate, the second metal particles having a particle size of less than 100 nanometers, and a melting temperature of the second metal particles at the particle diameter is less than the protective temperature; The thermal interface material preform is disposed on the heat source surface; the thermal interface material preform is heated to melt agglomerate the second metal particles; and the thermal interface material preform is cooled to form a thermal interface material on the heat source surface.
相較於先前技術,該熱介面材料中之奈米碳管複合於第一金屬顆粒中形成複合導熱顆粒。由於該複合導熱顆粒之熱傳遞方向無方向性限制,由該複數複合導熱顆粒相互搭接而形成之導熱通道,具有較短之熱傳遞路徑;且,由於複合導熱顆粒具有較大之粒徑,相互搭接之複合導熱顆粒之間之熱阻較小。因此,該熱介面材料有效利用了奈米碳管優異之導熱性能,具有較好之導熱性能。 Compared to the prior art, the carbon nanotubes in the thermal interface material are combined with the first metal particles to form composite thermally conductive particles. Since the heat transfer direction of the composite heat conductive particles is not directional, the heat conduction channel formed by the overlapping of the plurality of composite heat conductive particles has a short heat transfer path; and, since the composite heat conductive particles have a large particle diameter, The thermal resistance between the composite thermally conductive particles that overlap each other is small. Therefore, the thermal interface material effectively utilizes the excellent thermal conductivity of the carbon nanotubes and has better thermal conductivity.
下面將結合附圖對本發明實施例之熱介面材料,具該熱介面材料之電子裝置及該電子裝置之製備方法作進一步 詳細說明。 The thermal interface material of the embodiment of the present invention, the electronic device having the thermal interface material, and the preparation method of the electronic device will be further described with reference to the accompanying drawings. Detailed description.
請參閱圖1,為本發明實施例提供之電子裝置100,其包括一熱源10、一散熱裝置20及一熱介面材料30,該熱介面材料30設置於該熱源10及散熱裝置20之間,用於將該熱源10產生之熱量傳遞給該散熱裝置20。 1 is an electronic device 100 according to an embodiment of the present invention. The electronic device 100 includes a heat source 10, a heat sink 20, and a thermal interface material 30. The thermal interface material 30 is disposed between the heat source 10 and the heat sink 20. The heat generated by the heat source 10 is transferred to the heat sink 20.
該熱源10可以係半導體集成器件,也可以係IC電路,電阻或其他發熱元件。該熱源10具有一使該熱源10不至於過熱損壞之保護溫度T1。可以理解,當該熱源10之溫度超過T1時,該熱源10會由於過熱而損壞,即T1為熱源10不至於損壞之最大容忍溫度。優選地,該保護溫度T1小於350℃。在本實施例中,該熱源10為CPU,其保護溫度T1為120℃。 The heat source 10 can be a semiconductor integrated device or an IC circuit, a resistor or other heat generating component. The heat source 10 has a protection temperature T1 that prevents the heat source 10 from being damaged by overheating. It can be understood that when the temperature of the heat source 10 exceeds T1, the heat source 10 may be damaged due to overheating, that is, T1 is the maximum tolerated temperature at which the heat source 10 is not damaged. Preferably, the protection temperature T1 is less than 350 °C. In the present embodiment, the heat source 10 is a CPU having a protection temperature T1 of 120 °C.
該散熱裝置20用於將該熱源10產生之熱量快速導出,使熱源10不產生熱積累。 The heat sink 20 is used to quickly derive the heat generated by the heat source 10 so that the heat source 10 does not generate heat accumulation.
該熱介面材料30於設置於該熱源10與散熱裝置20之間。請參閱圖2,該熱介面材料30包括一柔性基體31及填充於該柔性基體31中之複數複合導熱顆粒32。 The thermal interface material 30 is disposed between the heat source 10 and the heat sink 20 . Referring to FIG. 2 , the thermal interface material 30 includes a flexible substrate 31 and a plurality of composite thermally conductive particles 32 filled in the flexible substrate 31 .
該柔性基體31之熔融溫度大於該保護溫度T1,使該熱介面材料30於工作時能夠保持固定之形狀,不從該電子裝置100溢出。在本實施例中,該柔性基體31為熱塑性樹脂與熱固性聚合物所組成之混合體。其中,該熱塑性樹脂可為環氧樹脂系列,酚醛樹脂系列,聚醯胺樹脂系列中之任意一種;該熱固性聚合物材料可為丁苯橡膠系列,溶膠凝膠系列,矽膠系列中之任意一種。在本實施例中 ,該柔性基體31為酚醛樹脂系列與溶膠凝膠系列所組成之混合物。 The melting temperature of the flexible substrate 31 is greater than the protection temperature T1, so that the thermal interface material 30 can maintain a fixed shape during operation without overflowing from the electronic device 100. In the present embodiment, the flexible substrate 31 is a mixture of a thermoplastic resin and a thermosetting polymer. The thermoplastic resin may be any one of an epoxy resin series, a phenolic resin series, and a polyamidamide resin series; the thermosetting polymer material may be any one of a styrene-butadiene rubber series, a sol-gel series, and a silicone-based series. In this embodiment The flexible substrate 31 is a mixture of a phenolic resin series and a sol gel series.
該複數複合導熱顆粒32均勻分散於該柔性基體31中,該複數複合導熱顆粒32在該熱介面材料30中之質量百分含量為15%~95%,該複合導熱顆粒32之粒徑大於100奈米且於該粒徑之熔融溫度大於該保護溫度T1。該複合導熱顆粒包括一第一金屬顆粒321及至少一奈米碳管322複合於該第一金屬顆粒321中。該第一金屬顆粒321於該熱介面材料30中之質量百分含量為15%~95%,該第一金屬顆粒321之材料可為銀、銅、錫鉛合金或鋁。該奈米碳管322於該熱介面材料30中之質量百分含量為1%~25%,其包括單壁奈米碳管、雙壁奈米碳管或多壁奈米碳管,進一步地,為了增強該奈米碳管322對第一金屬顆粒321之親和力,可對該奈米碳管322之表面進行修飾,如通過化學鍍等方法於該奈米碳管322之表面鍍上金屬或合金。 The plurality of composite thermally conductive particles 32 are uniformly dispersed in the flexible substrate 31. The mass percentage of the plurality of composite thermally conductive particles 32 in the thermal interface material 30 is 15% to 95%, and the particle size of the composite thermally conductive particles 32 is greater than 100. The melting temperature of the nanoparticle at the particle size is greater than the protective temperature T1. The composite thermally conductive particles include a first metal particle 321 and at least one carbon nanotube 322 composited in the first metal particle 321 . The first metal particles 321 are 15% to 95% by mass in the thermal interface material 30, and the first metal particles 321 may be made of silver, copper, tin-lead alloy or aluminum. The carbon nanotube 322 has a mass percentage of 1% to 25% in the thermal interface material 30, and includes a single-walled carbon nanotube, a double-walled carbon nanotube or a multi-walled carbon nanotube, and further In order to enhance the affinity of the carbon nanotube 322 for the first metal particle 321 , the surface of the carbon nanotube 322 may be modified, such as by metal plating or the surface of the carbon nanotube 322 is plated with metal or alloy.
該複合導熱顆粒32通過該第一金屬顆粒321複合至少一奈米碳管322而形成,具體地,該奈米碳管322分散於該第一金屬顆粒321中。該複合導熱顆粒32有效利用了奈米碳管322優異之導熱性能,且大大降低分散於同一第一金屬顆粒321中之複數奈米碳管322之間之介面熱阻。由於該複合導熱顆粒32之熱傳遞方向無方向性限制,由該複數複合導熱顆粒32相互搭接而形成之導熱通道,具有較短之熱傳遞路徑;且,由於複合導熱顆粒32具有較大之粒徑,相互搭接之複合導熱顆粒32之間之熱阻較小。因此,該熱介面材料100有效利用了奈米碳管322優異之導熱 性能,具有較好之導熱性能。 The composite thermally conductive particles 32 are formed by combining the first metal particles 321 with at least one carbon nanotube 322. Specifically, the carbon nanotubes 322 are dispersed in the first metal particles 321 . The composite thermally conductive particles 32 effectively utilize the excellent thermal conductivity of the carbon nanotubes 322 and greatly reduce the interface thermal resistance between the plurality of carbon nanotubes 322 dispersed in the same first metal particles 321 . Since the heat transfer direction of the composite heat conductive particles 32 is not directional, the heat conduction channel formed by the overlapping of the plurality of composite heat conductive particles 32 has a short heat transfer path; and, since the composite heat conductive particles 32 have a larger The particle size and the thermal resistance between the composite thermally conductive particles 32 overlapping each other are small. Therefore, the thermal interface material 100 effectively utilizes the excellent thermal conductivity of the carbon nanotube 322 Performance, with good thermal conductivity.
在該熱介面材料30中,還可包括複數未複合該奈米碳管322之第一金屬顆粒321,該第一金屬顆粒321之粒徑大於100奈米。亦即,該柔性基體31中之導熱粒子包括複合導熱顆粒32與第一金屬顆粒321兩種。此時,該導熱通道由該複數複合導熱顆粒32及複數第一金屬顆粒321相互搭接而形成。可以理解,當該熱介面材料30還包括複數未複合該奈米碳管322之第一金屬顆粒321時,該熱介面材料30也可通過如下方式描述,該熱介面材料30包括柔性基體31及分散於該柔性基體31中之複數第一金屬顆粒321。其中一部分第一金屬顆粒321與奈米碳管322複合形成複數複合導熱顆粒32。 In the thermal interface material 30, a plurality of first metal particles 321 which are not composited with the carbon nanotubes 322 may be further included, and the first metal particles 321 have a particle diameter greater than 100 nm. That is, the thermally conductive particles in the flexible substrate 31 include the composite thermally conductive particles 32 and the first metal particles 321 . At this time, the heat conduction channel is formed by overlapping the plurality of composite thermally conductive particles 32 and the plurality of first metal particles 321 . It can be understood that when the thermal interface material 30 further includes a plurality of first metal particles 321 that are not composited with the carbon nanotubes 322, the thermal interface material 30 can also be described as follows, the thermal interface material 30 includes a flexible substrate 31 and A plurality of first metal particles 321 dispersed in the flexible substrate 31. A portion of the first metal particles 321 are combined with the carbon nanotubes 322 to form a plurality of composite thermally conductive particles 32.
請參閱圖3及圖4,該電子裝置100之製備方法包括如下步驟。 Referring to FIG. 3 and FIG. 4, the method for manufacturing the electronic device 100 includes the following steps.
步驟S101,提供一熱介面材料預製體及一熱源10,該熱源10具有一使該熱源10不至於過熱損壞之保護溫度T1,該熱介面材料預製體包括一柔性基體31、填充於該柔性基體31中之複數第二金屬顆粒3211及複數奈米碳管322,該第二金屬顆粒3211之粒徑小於100奈米,且該第二金屬顆粒3211於該粒徑下之熔融溫度T2小於該保護溫度T1。優選地,該保護溫度T1為120℃,該第二金屬顆粒3211之粒徑小於50奈米。本實施例中,該第二金屬顆粒3211為粒徑於20奈米左右之銀顆粒,其於該粒徑之熔融溫度T2為100℃左右。該第二金屬顆粒3211也可為粒徑範圍於10奈米~20奈米之錫鉛合金顆粒,其於該粒徑之熔 融溫度T2為91℃。 In step S101, a thermal interface material preform and a heat source 10 are provided. The heat source 10 has a protection temperature T1 for preventing the heat source 10 from being damaged by overheating. The heat interface material preform includes a flexible substrate 31 and is filled with the flexible substrate. a plurality of second metal particles 3211 and a plurality of carbon nanotubes 322 having a particle diameter of less than 100 nm, and a melting temperature T2 of the second metal particles 3211 at the particle diameter is less than the protection Temperature T1. Preferably, the protection temperature T1 is 120 ° C, and the second metal particle 3211 has a particle diameter of less than 50 nm. In the present embodiment, the second metal particles 3211 are silver particles having a particle diameter of about 20 nm, and the melting temperature T2 of the particle diameter is about 100 °C. The second metal particles 3211 may also be tin-lead alloy particles having a particle size ranging from 10 nm to 20 nm, and the melting of the particle size The melting temperature T2 was 91 °C.
步驟S102,將該熱介面材料預製體設置於熱源10表面。可通過將該熱介面材料預製體直接設置於熱源10表面;或將該熱介面材料預製體溶解於一溶劑塗覆於該熱源10表面,再揮發掉該溶劑而使該熱介面材料預製體設置於熱源10表面。 In step S102, the thermal interface material preform is disposed on the surface of the heat source 10. The thermal interface material preform may be disposed by directly disposing the thermal interface material preform on the surface of the heat source 10; or dissolving the hot interface material preform in a solvent to be applied to the surface of the heat source 10, and then volatilizing the solvent to set the thermal interface material preform On the surface of the heat source 10.
步驟S103,加熱該熱介面材料預製體,使該第二金屬顆粒3211熔融團聚。具體地,該加熱溫度於該第二金屬顆粒3211於該粒徑之熔融溫度T2與保護溫度T1之間。該第二金屬顆粒3211於熔融態下會相互結合形成具較大粒徑之第一金屬顆粒321,該第一金屬顆粒321之粒徑大於100奈米。其中,部分第一金屬顆粒321可複合至少一奈米碳管322形成複合導熱顆粒32,此時,該複合導熱顆粒32之粒徑也大於100奈米。可以理解,該第一金屬顆粒321與第二金屬顆粒3211之材料相同,粒徑不同,該第一金屬顆粒321之粒徑大於100奈米,而第二金屬顆粒3211之粒徑則小於100奈米;該第一金屬顆粒321與第二金屬顆粒3211具有不同之物理性質,這係因為當金屬材料粒徑小於100奈米時,尤其係粒徑小於50奈米時,其熔點隨著粒徑之減小而減小,而該金屬材料於粒徑大於100奈米時,其熔點則保持穩定且大於該金屬材料於粒徑小於100奈米時之熔點。該第二金屬顆粒3211於一定條件下可轉換為第一金屬顆粒321,如複數第二金屬顆粒3211於熔融態相互融合而轉換成第一金屬顆粒321。在本實施例中,該加熱溫度小於120℃,具體地,當該第二金屬顆粒3211 為粒徑20奈米之銀顆粒時,該加熱溫度為100℃~120℃;當該第二金屬顆粒3211為粒徑範圍於10奈米~20奈米之錫鉛合金顆粒時,該加熱溫度為91℃~120℃。 In step S103, the thermal interface material preform is heated to melt agglomerate the second metal particles 3211. Specifically, the heating temperature is between the melting temperature T2 of the second metal particles 3211 and the protective temperature T1. The second metal particles 3211 are combined with each other in a molten state to form first metal particles 321 having a larger particle diameter, and the first metal particles 321 have a particle diameter larger than 100 nm. Wherein, part of the first metal particles 321 may be combined with at least one carbon nanotube 322 to form composite thermally conductive particles 32. At this time, the composite thermally conductive particles 32 have a particle diameter of more than 100 nm. It can be understood that the first metal particles 321 are the same as the second metal particles 3211, and the particle diameters are different. The first metal particles 321 have a particle diameter larger than 100 nm, and the second metal particles 3211 have a particle diameter smaller than 100 nm. The first metal particles 321 and the second metal particles 3211 have different physical properties, because when the metal material has a particle diameter of less than 100 nanometers, especially when the particle diameter is less than 50 nanometers, the melting point of the metal particles The decrease is reduced, and when the metal material has a particle diameter of more than 100 nm, the melting point thereof remains stable and is greater than the melting point of the metal material at a particle diameter of less than 100 nm. The second metal particles 3211 can be converted into the first metal particles 321 under certain conditions, and the plurality of second metal particles 3211 are fused to each other in the molten state to be converted into the first metal particles 321 . In this embodiment, the heating temperature is less than 120 ° C, specifically, when the second metal particles 3211 When the silver particles are 20 nm, the heating temperature is 100 ° C to 120 ° C; when the second metal particles 3211 are tin-lead alloy particles having a particle diameter ranging from 10 nm to 20 nm, the heating temperature is It is from 91 ° C to 120 ° C.
步驟S104,將一散熱裝置20扣合於該熱介面材料預製體表面,使該熱介面材料預製體位於該熱源10與散熱裝置20之間。在該熱介面材料預製體於熔融態時將該散熱裝置20扣合於該熱介面材料預製體表面,可靈活調節該散熱裝置20與該熱源10之間之距離。可以理解,該熱介面材料預製體於熔融態下,更容易被壓縮,從而能夠進一步縮短該散熱裝置20與該熱源10之間之距離,縮短熱傳遞路徑。 In step S104, a heat dissipating device 20 is fastened to the surface of the thermal interface material preform so that the thermal interface material preform is located between the heat source 10 and the heat sink 20. When the heat interface material preform is in a molten state, the heat sink 20 is fastened to the surface of the heat interface material preform, and the distance between the heat sink 20 and the heat source 10 can be flexibly adjusted. It can be understood that the thermal interface material preform is more easily compressed in the molten state, so that the distance between the heat sink 20 and the heat source 10 can be further shortened, and the heat transfer path can be shortened.
步驟S105,冷卻該熱介面材料預製體,形成熱介面材料30於熱源10表面。冷卻該熱介面材料預製體形成熱介面材料30後,該第一金屬顆粒321之粒徑大於100奈米,且其於該粒徑下之熔融溫度大於該保護溫度T1。具體地,當該第一金屬顆粒321為粒徑大於100奈米之銀顆粒時,其熔融溫度為962℃;當該第一金屬顆粒321為粒徑大於100奈米之錫鉛合金顆粒時,其熔融溫度為183℃。可以理解,該熱介面材料預製體經過冷卻形成熱介面材料30後,當再次將溫度升高到該第一金屬顆粒321於較小粒徑之熔融溫度T2時,該複合有奈米碳管之第一金屬顆粒321或複合導熱顆粒32也不會熔融,從而能夠保持於固態下工作。 In step S105, the thermal interface material preform is cooled to form a thermal interface material 30 on the surface of the heat source 10. After cooling the thermal interface material preform to form the thermal interface material 30, the first metal particles 321 have a particle size greater than 100 nm, and the melting temperature at the particle size is greater than the protection temperature T1. Specifically, when the first metal particles 321 are silver particles having a particle diameter of more than 100 nm, the melting temperature thereof is 962 ° C; when the first metal particles 321 are tin-lead alloy particles having a particle diameter of more than 100 nm, Its melting temperature was 183 °C. It can be understood that after the thermal interface material preform is cooled to form the thermal interface material 30, when the temperature is raised again to the melting temperature T2 of the first metal particle 321 at a smaller particle diameter, the composite carbon nanotube is composited. The first metal particles 321 or the composite thermally conductive particles 32 are also not melted, so that they can be kept in a solid state.
在該步驟S102中,還可包括如下步驟:將一散熱裝置20扣合於該熱介面材料預製體表面,使該熱介面材料預製 體位於該熱源10與散熱裝置20之間。且,此時該步驟S104將不再必要。 In this step S102, the method further includes the steps of: fastening a heat dissipating device 20 to the surface of the thermal interface material preform, and prefabricating the thermal interface material. The body is located between the heat source 10 and the heat sink 20. Moreover, at this time, the step S104 will no longer be necessary.
該製備方法利用金屬材料之粒徑於小於100奈米時其熔融溫度變化之特性,將導熱係數高之金屬與奈米碳管於較低之溫度下複合,從而獲得導熱性能較好之熱介面材料。且該熱介面材料於形成過程中,該金屬材料具有一相變之過程,熔融態之金屬材料能夠有效浸潤到該熱介面材料與熱源接觸表面間之間隙,從而使該熱介面材料與該熱源及散熱裝置為面接觸,減小該熱介面材料與熱源及散熱裝置之間之熱阻,且該熔融溫度不至於對熱源造成損壞;其次,該複合導熱顆粒具有較大之粒徑,減小該複合導熱顆粒與柔性基體之間之介面熱阻;再次,該複合導熱顆粒於熱源工作時始終保持固態,保持了金屬材料及奈米碳管優異之導熱性能。 The preparation method utilizes the characteristic that the particle diameter of the metal material changes at a melting temperature of less than 100 nm, and the metal having a high thermal conductivity is combined with the carbon nanotube at a lower temperature to obtain a thermal interface having better thermal conductivity. material. During the formation of the thermal interface material, the metal material has a phase change process, and the molten metal material can effectively infiltrate into the gap between the contact surface of the thermal interface material and the heat source, thereby making the thermal interface material and the heat source And the heat dissipating device is in surface contact, reducing the thermal resistance between the thermal interface material and the heat source and the heat dissipating device, and the melting temperature does not cause damage to the heat source; secondly, the composite thermally conductive particle has a larger particle diameter and decreases The interface thermal resistance between the composite thermally conductive particles and the flexible substrate; again, the composite thermally conductive particles remain solid during operation of the heat source, maintaining excellent thermal conductivity of the metal material and the carbon nanotube.
該熱介面材料中之奈米碳管複合於第一金屬顆粒中形成複合導熱顆粒。由於該複合導熱顆粒之熱傳遞方向無方向性限制,由該複數複合導熱顆粒相互搭接而形成之導熱通道,具有較短之熱傳遞路徑;且,由於複合導熱顆粒具有較大之粒徑,相互搭接而形成之複合導熱顆粒之間之熱阻較小。因此,該熱介面材料有效利用了奈米碳管優異之導熱性能,具有較好之導熱性能。 The carbon nanotubes in the thermal interface material are composited in the first metal particles to form composite thermally conductive particles. Since the heat transfer direction of the composite heat conductive particles is not directional, the heat conduction channel formed by the overlapping of the plurality of composite heat conductive particles has a short heat transfer path; and, since the composite heat conductive particles have a large particle diameter, The thermal resistance between the composite thermally conductive particles formed by overlapping each other is small. Therefore, the thermal interface material effectively utilizes the excellent thermal conductivity of the carbon nanotubes and has better thermal conductivity.
綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施例,自不能以此限制本案之申請專利範圍。舉凡習知本案技藝之人士援依本發明之精神所作之等效修飾或變化, 皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Any person skilled in the art will be able to make equivalent modifications or variations in accordance with the spirit of the invention. All should be covered by the following patent application.
100‧‧‧電子裝置 100‧‧‧Electronic devices
10‧‧‧熱源 10‧‧‧heat source
20‧‧‧散熱裝置 20‧‧‧heating device
30‧‧‧熱介面材料 30‧‧‧Hot interface materials
31‧‧‧柔性基體 31‧‧‧Flexible substrate
32‧‧‧複合導熱顆粒 32‧‧‧Composite thermal conductive particles
321‧‧‧第一金屬顆粒 321‧‧‧First metal particles
3211‧‧‧第二金屬顆粒 3211‧‧‧Second metal particles
322‧‧‧奈米碳管 322‧‧‧Nano Carbon Tube
圖1係本發明實施例提供之電子裝置之結構示意圖。 FIG. 1 is a schematic structural diagram of an electronic device according to an embodiment of the present invention.
圖2係圖1中熱介面材料微觀結構示意圖。 2 is a schematic view showing the microstructure of the thermal interface material in FIG.
圖3係本發明製備熱介面材料之熱介面材料預製體之微觀結構示意圖。 3 is a schematic view showing the microstructure of a thermal interface material preform for preparing a thermal interface material according to the present invention.
圖4係本發明實施例提供之電子裝置之製備方法之流程示意圖。 4 is a schematic flow chart of a method for preparing an electronic device according to an embodiment of the present invention.
30‧‧‧熱介面材料 30‧‧‧Hot interface materials
31‧‧‧柔性基體 31‧‧‧Flexible substrate
32‧‧‧複合導熱顆粒 32‧‧‧Composite thermal conductive particles
321‧‧‧第一金屬顆粒 321‧‧‧First metal particles
322‧‧‧奈米碳管 322‧‧‧Nano Carbon Tube
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