TWI379135B - Pixel structure and repair method thereof, display panel and repair method thereof, and electro-optical apparatus and repair method thereof - Google Patents

Description

99-6-28 IX. Description of the invention: [Technical field to which the invention pertains], B The present invention relates to a display panel and a repairing method thereof, and in particular to a pixel structure and a repairing method thereof. [Prior Art] In the past, cathode ray tube (CRT)—straight to dominate the market. However, the cathode ray tube is bulky and has radiation and energy consumption. It cannot satisfy consumers' light and thin. Short, small and low power consumption requirements. Therefore, Thin Film Transistor-Liquid Crystal Display (TFT-LCD), which has high image quality, good space efficiency, low power consumption, and no radiation, has gradually become the mainstream of the market. The thin film transistor liquid crystal display (TFT_LCD) is mainly composed of a thin film electrocrystal, an array substrate, a color filter array substrate and a liquid crystal layer, wherein the thin film transistor array substrate is composed of a plurality of arrays of pixel structures, each of which The pixel structure is composed of a thin film transistor, a pixd electrode, and a storage capacitor (st〇mge capacit〇r). When the storage capacitor in the halogen structure is abnormally leaked due to the breakage of the particles or the dielectric layer, the pixel structure becomes a defect. However, if you directly abandon these defective LCD panels, it will greatly increase the manufacturing cost. Generally speaking, it is very difficult to rely on improving the process technology to achieve zero fatigue rate. Therefore, the liquid crystal display panel is repaired. It has become quite important. In the prior art, the fatigue repair of the liquid crystal display panel is usually performed by means of la ser welding or laser cutting. In the case of a thin film transistor liquid crystal display (TFT-LCD), the action of laser splicing or cutting is usually performed after the fabrication of a thin film transistor array (TFTarray). However, due to the structural design of the pixels, not every flaw can be quickly repaired, and some are even difficult to repair. -

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing the structure of the winter matsin and its repairing position. Referring to FIG. 1 , the conventional pixel structure 10 includes a substrate u , a semiconductor layer 120 , a gate layer 130 , a first metal layer 14 , a dielectric layer 150 , a first metal layer 160 , and a protective layer 170 . a flat layer 18 〇 and a transparent conductive layer 190.

The patterned semiconductor layer 120 described above is located on the substrate 11A. The gate insulating layer 130 covers the patterned semiconductor layer 12A. The patterned first metal layer 140 is over the gate insulating layer 130. A dielectric layer 150 covers the patterned first metal layer 140 and the gate insulating layer 丨3〇. The dielectric layer 15A and the gate insulating layer 130 have a contact window 152 and a contact window 154 to expose a portion of the semiconductor layer 120. The patterned second metal layer is located on the dielectric layer 150, and the patterned second metal layer 160 is electrically connected to the semiconductor layer 120 via the contact window 152 and the contact window 154. The protective layer 17 is located above the dielectric layer 150 and the second metal layer 160. The flat layer 180 covers the protective layer 170' and the flat layer 180 and the protective layer no have a contact window 172, and the contact window 172 exposes a portion of the second metal layer 16'. The transparent conductive layer 19 is located above the flat layer 180, and the transparent conductive layer 190 is electrically connected to the second metal layer 160 via the contact window 172. As can be seen from Fig. 1, the switching element in the halogen structure 100 is a low temperature polycrystalline stone (L〇w Temperature

Polycrystalline Silicon, LTPS) top gate thin film transistor. 6 1379135 99-6-28 When the second: two-two pixel structure 100 appears 瑕疵 'known technology ^ aaZ ° ^ for cutting, and the transparent conductive layer 190 at the position of the dotted frame 610 蛊窜 摄 摄 置 置!9〇 directly with the first metal; ^^ 〇, so that the transparent conductive layer often causes the welding success. The flat layer 18G is too thick, when. ^ Therefore, how to improve the repair rate of the prime structure 100, (4) from the current important issues . SUMMARY OF THE INVENTION The gate is connected to the channel layer. The present invention provides a splicing yield. The present invention provides a sputum repairing method, which has a high-quality patch-providing structure, which is disposed on a substrate. , and ^ _, trace line and 1 material line electrical connection. The halogen structure includes a -main = piece and a halogen element. The active component is disposed on the substrate. The active = component includes a patterned semiconductor layer, a gate insulating layer, a gate, and a contact conductor layer. The interpole is electrically connected to the scan line. The gate insulating layer is located between the phase poles of the second semiconductor layer. The ® s semiconductor layer has a -th semiconductor block and a second semiconductor block insulated from each other. A semiconductor block is connected to the gate. The contact conductor layer has a first contact conductor block connected to the first half, the body block, and a second contact conductive block connected to the second half 3 block. The second semiconductor block is electrically connected to the 'bee feed line. The halogen electrode is electrically connected to the first contact conductor block. 7 1379135 99-6-28 ^Inventive provides a method for repairing, which is suitable for repairing - a pixel structure, a structure, a substrate, and a - scan line and: data, sexual connection. The halogen structure includes a main component and a halogen electrode. The active component is disposed on the substrate ‘and the active component includes a time-inducing semiconductor layer, a gate insulating layer, a gate, and a contact conductor layer. The gate plate is electrically connected to the trace line. The gate insulating layer is located between the patterned semiconductor layer and the idler. The contact conductor layer has a second contact conductor block connected to the pixel electrode and the patterned 3 = first contact conductor block and a connection between the data line and the pattern-conductor layer. a layer, the patterned semiconductor layer is divided into a first conductor block and a second semiconductor block to electrically connect the first semiconductor block electrically connected to the pixel electrode and the second semiconductor half electrically connected to the data line The block is electrically insulated. Then, the gate is connected to the first semiconductor block. Since the halogen structure of the present invention has a structure in which the gate is connected to the first semiconductor block, the gate can be passed through the first semiconductor block and the first contact conductor H block. It is electrically connected to the halogen electrode, so that the gate has the same voltage as the halogen electrode. Compared with the conventional halogen structure, the repaired position of the present & plain pixel structure is not limited by the position of the halogen electrode, and the present invention combines the gate and the patterned semiconductor layer The above-described and other objects, features and advantages of the present invention will become more apparent and obvious. , as detailed below. 8 1379135 99-6-28 [Embodiment] [First Embodiment] FIG. 2A is a cross-sectional view showing the structure of a halogen element of the first embodiment of the present invention (four)-real_= FIG. 2A and FIG. 2B, the halogen structure 2 of the present embodiment is disposed on the substrate s, and the halogen structure 200 is electrically connected to the scan lines %α and DL. It can be clearly seen from FIG. 2 that the drawing device 200 of the present embodiment includes an active device 21A and a halogen electrode 22A, wherein the active device 210 includes a patterned semiconductor layer 212, an idle insulating sound 214, and The gate 216 and a contact conductor layer 218. The gate 216 is electrically connected to the trace SL. The gate insulating layer 214 is located between the patterned semiconductor layer 2 and the gate 216. In addition, the contact conductor layer 218 has a first contact conductor block 218D connected between the pixel electrode 220 and the patterned semiconductor layer 212 and a second contact conductor connected between the data line DL and the patterned semiconductor layer 212. Block 218S. In other words, in Fig. 2B, J-contact conductor block 2180, second contact conductor block 218S, and data line DL are all defined by patterning contact conductor layer 218. In addition, the first contact conductor block 218D may also be referred to as a drain, and the second contact conductor block 218S may also be referred to as a source. In the present embodiment, the semiconductor layer 212 may be a single layer structure or a multilayer structure ' and its material may be polycrystalline germanium. In other words, the active device 21 is a polycrystalline thin film transistor, but is not limited thereto, and other lattice materials such as amorphous germanium, single crystal germanium, microcrystalline germanium, nanocrystalline germanium, or the like may be used. The crystal lattice has a dopant compound, or a lattice-containing cerium compound, or an organic semiconductor of the above crystal system, or other suitable material, or a combination of the above-mentioned 9 1379135 99-6-28. The gate insulating layer 214 may be a single layer structure or a multilayer structure, and the material thereof is, for example, an inorganic material (eg, yttrium oxide, tantalum nitride, ytterbium oxynitride, oxidized sulphur, oxidized group, fluorine dream glass (fIu〇rinated 〇xi ( Je, FS (}), or other materials, or a combination of the above), organic materials (such as: photoresist, polyacrylic ether (PAE), polyfluorene, poly g, charcoal Class, poly-, benzocyclbt = BCB ^ HSQ (hydrogen silsesquioxane) > MSQ (methyl. sihquioxane), hydrogenated hydrocarbon (SiOC_H), polyether, poly-I, "class, The poly-, poly-Wei-type poly-epoxy recording further contact conductor layer 218 may be a single layer of tantalum, (four) _, or other materials, or a combination thereof, or a combination thereof, and the open pole 216 may be a single layer structure or a multilayer structure, and the material thereof is, for example, gold, silver, copper, tin, aluminum, lead, titanium, molybdenum, niobium, tungsten, tantalum, niobium, chromium, other metal materials, or nitrides thereof, or oxides thereof Or the above alloy, conductive polymer, or a combination thereof, is a single layer structure or a multilayer structure, and its

Silk zinc oxide or the like or a combination thereof, 10 t mash, or a combination thereof. In this embodiment, the transparent material of indium tin is used as the pixel electrode 22 〇 as an example, but not limited to when the pixel structure 200 is a transmissive pixel structure, the halogen electrode 22 〇 can be transparent. Made of conductive materials of a characteristic. When the halogen structure 20 is a reflective halogen structure, the pixel electrode 220 can also be fabricated by using a reflective material or a non-transparent conductive material. Further, when the structure 2 (10) is a transflective pixel structure, the germanium electrode 22G can also be formed by using a conductive material having a reflective property or a non-transparent property and a transparent lightning-guide material. 2C is a schematic view of the pixel structure of FIG. 2B after being repaired. Referring to FIG. 2C, when the halogen structure 200 is defective and cannot function normally, the embodiment may first cut the patterned semiconductor layer 212 into two first semiconductor blocks 212a and 212 separated from each other at the cutting line c. The semiconductor block 212b electrically insulates the first semiconductor block 212a electrically connected to the pixel electrode 220 from the second semiconductor block 212b electrically connected to the data line DL. Thereafter, the gate 216 is connected to the first semiconductor block 212a. As can be seen from Fig. 2C, the junction w of the gate 216. and the first semiconductor block 212a is usually below the gate 216. However, it is necessary to explain the above steps. First, after the connection gate 216 is connected to the first semiconductor block 212a, the patterned semiconductor layer 212 is cut into two first semiconductor blocks separated from each other at the dicing line c. The second semiconductor block 212b is electrically insulated from the second semiconductor block 212b electrically connected to the data line D1. In addition, in the embodiment, the halogen structure 200 further includes a patterned protective layer 27 () covering the active element 1379135 99-6-28, wherein the patterned protective layer 270 has an opening. The halogen electrode 220 is electrically connected to the first semiconductor block 212a through the opening ,, but is not limited to the 'pixel structure' or the patterned protective layer 270.

In the embodiment, the method of cutting the patterned semiconductor layer 212 into the first semiconductor block 212a and the second semiconductor block 212b is, for example, laser cutting, such as back laser cutting (ie, cutting the pattern). The laser beam of the semiconductor layer 212 is incident from below the substrate S, the front side laser cut (i.e., the laser beam for cutting the patterned semiconductor layer 212 is incident from above the substrate S) or the laser cut is applied from the front and back sides. In addition, in the present embodiment, the method of connecting the gate 216 to the first semiconductor block 212a is, for example, laser welding, such as back-side laser fusion (ie, for soldering the gate 216 to the first semiconductor). The laser beam of block 212a is incident from below the substrate S, the front laser is fused (ie, the laser beam for fusing the gate 216 and the first semiconductor block 212a is incident from above the substrate S), or both front and back. Apply a laser weld. In other embodiments, the pixel electrode 22 above the gate 212 is first cut into at least one region (not shown) and another portion of the halogen electrode 220 above the non-gate 212 (not Separating and electrically insulating, and then applying at least one of a front laser and a back laser as described above to penetrate each film layer on the region (eg, a halogen electrode of the region, covering the gate) At least one dielectric layer (not labeled) of the layer, for example: an inner dielectric layer, a gate insulating layer, a patterned protective layer, a planar layer, and the like, and the first semiconductor block 212a and the gate of the patterned semiconductor layer 212 216, then forming another conductor layer on the region to connect the first semiconductor block 212a and the gate 216 of the patterned semiconductor layer 212, but the region and the 12 1379135 99-6-28 Sexual connection, b, as described in a, but when the whole electrode 220 is divided into two regions, the bottom of the gate 212 is checked or removed, and the layers in the region are removed and removed. Party i = such as: side, laser _ (four), e. other methods, or a combination of the above. The present invention may also be cut and the step of patterning the semiconductor layer connected to the gate electrode 216 and the second 212Q - 212a of the step of the semiconductor block transfer, in other words, the present invention is not limited to the order of execution of the cutting step of the connecting step qe +.

As shown in FIG. 2C, after the repair operation described above, the patterned semiconductor layer 212 in the pixel structure 200 has the first semiconductor block 212a and the second semiconductor block 212b electrically insulated from each other, and the gate 216 The pixel electrode 220 is electrically connected to the pixel electrode 220 through the first semiconductor block 212a and the first contact conductor block 218D.

For example, if the halogen structure 200 is applied to a liquid crystal display panel and the display mode of the liquid b is not normally white, the pixel structure 200 undergoes the above-mentioned repairing action. The dot defect of the liquid crystal display panel can be repaired to a dark spot. In detail, when the pixel structure 200 is driven, the gate 216 connected to the scan line SL (shown in FIG. 2A) is applied with a voltage sufficient to cause the first semiconductor block 212a to be in an on state. The element electrode 220 has the same voltage as the scanning line SL. If there is a significant difference between a voltage sufficient for the first semiconductor block 212a to assume a conducting state and a common voltage (Vcom) in the liquid crystal display panel, wherein the common voltage is applied to the common substrate of the pixel structure 200 The electrodes (not shown) are exemplified, but are not limited thereto, wherein a common voltage is applied to a common line (not shown) of the halogen structure 200 on a substrate of 13 1379135 99-6-28. Therefore, the liquid crystal layer above the repaired alizarin structure 200 is subjected to a distinct electric field, so that the display mode is a point in which the liquid crystal B is displayed in the panel, and the corrected pixel structure 200 corresponds to the point ( Dot) is a dark spot. Of course, if the halogen structure 2〇〇 is applied to a liquid crystal display panel, and the display mode of the liquid crystal display panel is normally black, the point corresponding to the repaired pixel structure 2〇〇 (dot) is a bright spot. [Second Embodiment] Fig. 3A is a schematic cross-sectional view showing a pixel structure of a second embodiment of the present invention. Referring to FIG. 3A, the halogen structure 2〇〇 of the present embodiment is similar to the halogen structure 200 of the first embodiment, but the main difference between the two is that the active element 21〇 in the halogen structure 2GG is Two gate TFTs are arranged horizontally as an example, but are not limited thereto, and can also be used.

The double gate thin film transistor arranged vertically is also repaired in the manner described in the embodiment. T

Fig. 3 is a schematic view showing the structure of the ruthenium structure of Fig. 3 after being repaired. Referring to FIG. 3A, when the structure of the pixel is fine and it is not working properly, the present embodiment can first cut the patterned semiconductor layer into two semiconductor regions 212 & The first conductor region 212b electrically insulates the first conductor block 212a electrically connected to the halogen electrode 22〇 and the second half block 2Hb electrically connected to the data line DL. Thereafter, the closed-pole test is connected to the first semiconductor block 212a. As can be seen from Fig. 3, the junction W between the gate and the second body block 212a is usually below the gate 216 & In the embodiment of the present invention, the method of cutting the patterned semiconductor layer 212 into the first semiconductor block 212a and the second semiconductor block 212b is, for example, laser cutting, such as back laser cutting and/or Frontal laser cutting. Further, in the present embodiment, the method of connecting the gates 216a, 216b to the first semiconductor block 212a is, for example, laser welding, such as frontal laser welding and/or backside laser fusion. Other suitable means may also be as described in the above embodiments.

In addition, the present invention is a top-gate type thin film transistor as an example, but is not limited thereto. In other embodiments, a bottom gate type thin film transistor may be used, preferably a reverse plane bottom gate. A thin film transistor of a type structure, but is not limited thereto.

It is to be noted that, in this embodiment, the memory structure 2 〇〇 ' further includes a storage capacitor 29 〇 as an example, and is disposed under the halogen electrode 220 , wherein the storage capacitor 29 〇 includes An upper electrode 294 and a lower electrode 292 are electrically connected to the first contact conductor block 218D. As shown in Figs. 3A and 3B, preferably, the composition of the lower electrode 292 is the same as that of the patterned semiconductor layer 212, but is not limited thereto. In other words, the lower electrode 292 and the patterned semiconductor layer 212 are preferably made of the same film in the same mask process, but are not limited thereto. Further, preferably, the composition of the upper electrode 292 is the same as the composition of the gates 216a and 216b, but is not limited thereto. In other words, the upper electrode 292 and the gates 216a, 216b are preferably made of the same film in the same mask process, but are not limited thereto. In addition, the storage capacitor 290 can also be selectively or unconfigured, depending on design requirements, and can alternatively be used in the first embodiment. Furthermore, the above embodiment is applied to a liquid crystal display panel as a standard 15 99-6-28 99-6-28

For example, it is not limited thereto, and it can also be used in an organic/inorganic electroluminescence display surface (e.g., a fluorescent photoexcited light display panel, a phosphorescent photoelectric excitation light display panel, or a combination thereof). The organic electroluminescent material of the organic electroluminescent display panel comprises a small molecule luminescent material, a polymer luminescent material, or a combination thereof. The liquid crystal display panel includes, for example, a penetrating drug display panel, a semi-transmissive display. Panel, reflective display panel, display panel of color light film on active layer (c〇l〇r filter on array), display panel of active layer on color filter (array on color filter), vertical alignment Type (VA) display panel, horizontal switching type (IPS) display panel, multi-domain vertical alignment type (MVA) display panel, twisted nematic (TN) display panel, super twisted nematic (STN) display panel, pattern vertical Alignment type (PVA) display panel, super pattern vertical alignment type (S-PVA) display panel, advanced large viewing angle (ASV) display panel, edge electric field switching type (FFS) display panel, continuous flame-like arrangement (CPA) display Panel, Axis Symmetrical Micro Cell (ASM) Display Panel, Optically Compensated Curved Arrangement (OCB) Display Panel, Super Horizontal Switching (S-IPS) Display Panel, Advanced Super Level Switching Type (A S-IPS) display panel, extreme edge electric field switching (upFS) display panel, polymer stable alignment display panel, dual-view display panel, triple view display panel, and three-dimensional display panel ( Three-dimensional) or other type of panel, or a combination of the above. Further, the above display panel and method thereof can also be applied to an optoelectronic device and a method thereof. Figure 4 is a schematic illustration of an optoelectronic device. The display panel arrayed by the array of the above-described halogen structures 200 can be combined with the electronic component 410 to form an optoelectronic device 5A. Here, the electronic component 16 1379135 99-6-28 includes, for example: (4) component, operating component component, memory component, driving component, illuminating component, second component, component, component, or other functional component, or Front = and the type of optoelectronic device includes portable products (such as hand ^ ° photo subtraction, pen, computer, game console, watch, music broadcast = machine electronic pin transceiver, map navigator, digital photo, or similar products ), audio and video products (such as audio and video projectors or similar products), : σ

Kanban, projection _ panel I

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make a few changes and refinements without departing from the spirit and scope of the invention. The scope of protection of the present invention is subject to the definition of the patent application scope attached to the moxibustion moxibustion. [Simple description of the map]

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a structure of a halogen structure of a prior art and its repairing position. 2 is a schematic view showing the structure of a halogen body according to a first embodiment of the present invention. Fig. 2 is a schematic cross-sectional view showing a structure of a halogen substrate according to a first embodiment of the present invention. Fig. 2C is a schematic view showing the structure of the ruthenium structure of Fig. 2 after being repaired. Fig. 3 is a schematic cross-sectional view showing a structure of a halogen substrate according to a second embodiment of the present invention. Fig. 3 is a schematic view showing the structure of the ruthenium structure of Fig. 3 after being repaired. 4 is a schematic view of an optoelectronic device of the present invention. 17 1379135 99-6-28 [Description of main component symbols] 100, 200, 200': pixel structure 106: dotted grid 110, S: substrate 120: semiconductor layer 130, 214: gate insulating layer 140: first metal layer 150: dielectric layer

152, 154, 172: contact window 160: second metal layer 170, 270: patterned protective layer 180: flat layer 190: transparent conductive layer 212: patterned semiconductor layer 212a: first semiconductor block 212b: second semiconductor region Block 214: Gate Insulation

216, 216a, 216b: gate 218: contact conductor layer 218D · first contact conductor block 218S: second contact conductor block 220: halogen electrode 270 patterned protective layer 400: display panel 410: electronic component 18 1379135 99-6-28

500 : Optoelectronic device C : Cutting line Η : Opening S : Substrate W : Connection 292 : Lower electrode 294 : Upper electrode 290 : Storage capacitor 19

Claims (1)

28. Applying for a patented sub-species structure, disposed on a substrate and electrically connected to a scan line by a strip of material. The pixel structure comprises: a pattern: a matching plate: the active component includes a Reed, basin θ a gate insulating layer, a gate and a contact conductor i patterning 3 = scan line electrical connection 'the gate insulating layer is located between the gates 'the (four) semiconductor layer block, 2 = a first semiconductor block and - the second semiconductor layer has ^ ^ the gate is connected to the contact conductor and the -it block is connected to the first contact conductor block of the second connected contact conductor block, brother = The cattle conductor Q block is electrically connected to the data line; and the middle power 2=book==guide=” connection, which is connected to the material bias electrode, the first-+(four) block and the electrical connection, and the The second semiconductor block is electrically insulated. i Please refer to the halogen structure described in the first item of the patent range, wherein the main element includes a top-type thin-mode transistor. ' 3. As claimed in the patent item i-th item Wherein the faulty capacitor comprises a t-electrode pole 2; ί,=ΓΓ and the first-contact conductor block Connection 4. The composition of the elemental electrode and the composition of the semiconductor element in the third item of the application of the third item. The composition of the electrode as described in item 3 of the patent application is the same as the composition of the element. In the above, the pixel structure described in claim 1 further includes a 1379135 99-6-28 patterned protective layer covering the active device, wherein the patterned protective layer has a Opening, and the pixel electrode is electrically connected to the first semiconductor block through the opening. 7. A method for repairing a halogen structure, which is adapted to repair a halogen structure, the halogen structure being disposed on a substrate and electrically connected to a scan line and a data line, the halogen structure comprising an active component and a bismuth electrode, the active device is disposed on the substrate, and the active device includes a patterned semiconductor layer, a gate insulating layer, a gate, and a contact conductor layer, wherein the gate and the scan line are electrically Connecting, the gate insulating layer is located between the patterned semiconductor layer and the gate, the contact conductor layer has a first contact conductor block connected between the pixel electrode and the patterned semiconductor layer, and a connection a second contact conductor block between the data line and the patterned semiconductor layer, the repairing method comprising: Cutting the patterned semiconductor layer to divide the semiconductor layer into a first semiconductor block and a second semiconductor block, so that the first semiconductor block electrically connected to the pixel electrode is electrically connected to the The second semiconductor block of the data line is electrically insulated; and the gate is connected to the first semiconductor block. 8. The repairing method of claim 7, wherein the method of cutting the semiconductor layer comprises laser cutting. 9. The repair method of claim 8, wherein the laser cutting comprises at least one of a back laser cutting and a front laser cutting. 10. The repairing method of claim 7, wherein the method of connecting the gate to the first semiconductor block comprises laser welding. The method of repairing the invention of claim 10, wherein the laser welding comprises at least one of a front laser fusion and a back laser fusion. /2. A display panel comprising a plurality of pixel structures arranged in an array, wherein the pixel structures comprise a pixel structure as described in item i of the patent application. An optoelectronic device comprising: - a display panel as described in claim U. 70 pieces of electronics, the electronic components of which are connected to the display panel. No panel repair method' wherein the display panel includes a plurality of pixel structures arranged in an array, #赖瑕疯时时的的面板的面板 Ό Ό 出现 出现 出现 出现 出现 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 7 15. The method of repairing photoelectric farms, in which the 雷 雷 雷 詈勹 : : : : : : : : : : : : : : : : : : : : : : : : : :: twenty two