TWI378456B - Method and system for reducing program disturb in non-volatile storage - Google Patents
Method and system for reducing program disturb in non-volatile storage Download PDFInfo
- Publication number
- TWI378456B TWI378456B TW96135141A TW96135141A TWI378456B TW I378456 B TWI378456 B TW I378456B TW 96135141 A TW96135141 A TW 96135141A TW 96135141 A TW96135141 A TW 96135141A TW I378456 B TWI378456 B TW I378456B
- Authority
- TW
- Taiwan
- Prior art keywords
- volatile storage
- storage element
- voltage
- volatile
- adjacent
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 60
- 230000015654 memory Effects 0.000 claims description 322
- 238000007667 floating Methods 0.000 claims description 48
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- 230000008569 process Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 2
- 238000010410 dusting Methods 0.000 claims 3
- 239000003039 volatile agent Substances 0.000 claims 2
- 230000003190 augmentative effect Effects 0.000 claims 1
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- 210000002784 stomach Anatomy 0.000 claims 1
- 239000002699 waste material Substances 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 18
- 239000000758 substrate Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 9
- 238000012795 verification Methods 0.000 description 7
- 239000007943 implant Substances 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
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- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
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- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/535,628 US8189378B2 (en) | 2006-09-27 | 2006-09-27 | Reducing program disturb in non-volatile storage |
| US11/535,634 US8184478B2 (en) | 2006-09-27 | 2006-09-27 | Apparatus with reduced program disturb in non-volatile storage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200822344A TW200822344A (en) | 2008-05-16 |
| TWI378456B true TWI378456B (en) | 2012-12-01 |
Family
ID=39230870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW96135141A TWI378456B (en) | 2006-09-27 | 2007-09-20 | Method and system for reducing program disturb in non-volatile storage |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TWI378456B (fr) |
| WO (1) | WO2008039667A2 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11495297B2 (en) | 2020-05-27 | 2022-11-08 | Windbond Electronics Corp. | Semiconductor device and reading method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7848144B2 (en) * | 2008-06-16 | 2010-12-07 | Sandisk Corporation | Reverse order page writing in flash memories |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100272037B1 (ko) * | 1997-02-27 | 2000-12-01 | 니시무로 타이죠 | 불휘발성 반도체 기억 장치 |
| KR100385230B1 (ko) * | 2000-12-28 | 2003-05-27 | 삼성전자주식회사 | 불휘발성 반도체 메모리 장치의 프로그램 방법 |
| JP3957985B2 (ja) * | 2001-03-06 | 2007-08-15 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| KR100502412B1 (ko) * | 2002-10-23 | 2005-07-19 | 삼성전자주식회사 | 불 휘발성 반도체 메모리 장치 및 그것의 프로그램 방법 |
| US7161833B2 (en) * | 2004-02-06 | 2007-01-09 | Sandisk Corporation | Self-boosting system for flash memory cells |
| US7466590B2 (en) * | 2004-02-06 | 2008-12-16 | Sandisk Corporation | Self-boosting method for flash memory cells |
| US7170793B2 (en) * | 2004-04-13 | 2007-01-30 | Sandisk Corporation | Programming inhibit for non-volatile memory |
| EP1964127B1 (fr) * | 2005-12-19 | 2009-11-25 | SanDisk Corporation | Procede pour la programmation de memoire non volatile avec perturbation de programme reduite au moyen de tensions de passage modifiees |
-
2007
- 2007-09-19 WO PCT/US2007/078842 patent/WO2008039667A2/fr not_active Ceased
- 2007-09-20 TW TW96135141A patent/TWI378456B/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11495297B2 (en) | 2020-05-27 | 2022-11-08 | Windbond Electronics Corp. | Semiconductor device and reading method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008039667A2 (fr) | 2008-04-03 |
| TW200822344A (en) | 2008-05-16 |
| WO2008039667A3 (fr) | 2008-06-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |