TWI376819B - Photo diode package base structure and manufacturing method of the same - Google Patents

Description

1376819 IX. Description of the invention: [Technical field of invention] The present invention relates to a photodiode package pedestal structure and a manufacturing method thereof, particularly a capsular pedestal structure and fabrication for use on a photodiode die method. L flawless technology]

Please refer to the figure, which is a schematic view of the conventional light-diode package base construction. It can be clearly seen from the figure that the conventional photodiode package base structure 1 is mainly formed with a bearing space ^ and via holes 12, 13 on the tree substrate 1G, wherein the crucible substrate 10 has surfaces 1〇1, 1〇2 The top opening of the load-bearing space 11 is located on the side of the surface 101 of the stone substrate, and the bottom of the load-bearing space 11 is used to carry the photodiode grains such as a light-emitting diode (led = diode Dic). Job, while the top of j 12, 13 is connected to the bottom of the carrying space (four). In addition,

The first layer of emulsified insulating layer Η is formed on the surface of the soil plate 10, 1〇2 and the periphery of the bearing space n, and the surface of the side wall and the through holes 12 and 13 are formed, and the area is cut ==== rate_ The completed reflective layer 15 =: the insulating layer "on f 16, finally after the oxygen-cut light diode package base = layer 17" completes the design of the upper two-package base structure 1 (four). For example The reflective layer 15 included in the conventional package base structure 61 is mainly used to provide high light reflectance to reflect light emitted from the surface of the photodiode die 1 placed inside the package base structure i. However, in the conventional package base structure 1, an oxide 7 insulating layer 16 is formed on the reflective layer 15, and generally the oxidized front edge layer 16 has a light partial absorption (four) problem, thereby causing the reflective layer 15 to reflect light. The case of the lowering; correction, the formation of the oxidized oxide layer 16 on the reflective layer 15 has a temperature of about 3 GG or more, and this degree also causes the surface of the originally bright reflective layer 15 to become rough. The opposite is expected to fall; in addition, the general oxidized stone eve The heat conduction effect of the edge layers 14 and 16 is poor. When the conductive layer 17 conducts heat, the yttrium oxide insulating layers 14 and 16 are also unfavorable for the conduction of heat energy, and the heat dissipation efficiency of the entire package base structure is also caused. Great impact. Therefore, how to solve the problem caused by the design of the conventional photodiode package base structure 1 is the most important purpose of the development of the present invention. [Invention] This case is a package base structure for Carrying a photodiode die, the package base structure comprises: a substrate having a first surface and a second surface; a via hole extending through the substrate, and the top opening of the via hole is located a first surface of the substrate, a bottom opening of the via hole is located on the second surface of the substrate; and a conductive reflective layer formed on the first surface of the substrate and having a conductive portion and a reflection The conductive portion passes through the sidewall of the via hole and extends to form on the second surface of the substrate and can be electrically connected to the photodiode die. Between the rice diode dies and the first surface of the substrate. According to the above concept, the package pedestal structure of the present invention, wherein the substrate can be in a lattice direction (100), a lattice direction (1) 〇) Or a wafer substrate of the lattice direction (111). According to the above concept, the package base structure of the present invention, wherein the conductive reflective layer is a Tiw/Cu/Ni/Au alloy, a Ti/Cu/Ni The Au-alloy, a Ti/Au/Ni/Au alloy, or an A1Cu/Ni/Au alloy. According to the above concept, the package base structure of the present invention, wherein the conductive reflective layer has the conductive portion and The reflective portion is spaced apart by more than 2 〇 micrometers (um). According to the above concept, the package base structure described in the present invention further includes a ruthenium oxide insulating layer formed on the substrate. a first surface, the second surface, and a sidewall of the via hole; a reflective layer formed on the reflective portion of the conductive reflective layer; and a transparent protective layer formed on the reflective portion On the floor. According to the above concept, the package base structure described in the present invention, wherein the reflective layer is made of a material or a silver material having a high light reflectance. According to the above concept, the packaged base structure described in the present invention, wherein the transparent protective layer is a layer of a double-oxide layer 2), a nitrogen-cut insulating layer (SixNy), and a polyimide-based insulating layer (p〇) The transparent protective layer is made of a material such as lyimide, polymethyl Methacrylate (PMMA) or a photoresist layer SU8. According to the above concept, the package base structure of the present invention further includes a bearing space, the top opening is located on the first surface of the substrate, and the bottom portion of the 1376819 is used to carry the photodiode crystal to the bearing space. The bottom. And the top connection of the via hole. According to the above concept, the crucible base structure described in the present invention, wherein the top opening of the loading station can be located on the second surface of the substrate. According to the above concept, in the package base structure of the present invention, the top opening of the via hole is larger than, equal to or smaller than the bottom opening. The pedestal structure of the county described in the present invention, wherein the phosgene is electrically connected to the conductive portion of the reflective conductive layer in a one-line manner or in a flip chip manner. According to the above concept, the packaged pedestal structure described in the present invention may be a light-emitting diode die or a laser diode die. Another aspect of the present invention is a method for fabricating a photodiode package base structure, the method comprising the steps of: providing a substrate having a first surface and a second surface; the first surface of the service plate Forming a mask layer on the upper surface of the mask layer, forming an opening on the mask layer, etching the substrate, and forming at least two via holes in the opening, the conductive vias being connected to the substrate a surface and the second surface; and removing the curtain layer and forming on the surface of the material - the conductive layer 1 has a conductive portion and a reflecting portion, wherein the conductive portion passes through the rotating portion a sidewall of the through hole and (4) a wire above the second surface of the substrate and connected to the photodiode die, and the reflective portion is located between the photodiode die and the first surface of the substrate . According to the above concept, the photodiode encapsulation substrate 9 f structure according to another aspect of the present invention is a method in which the substrate is in a lattice direction (100) and crystal. The wafer substrate in the direction (11G) or the lattice direction (1) 丨). According to the above concept, in the case of the photodiode package pedestal method described in the above, the method of the towel gateway includes the following steps: ^ The H of the substrate forms a cash cut, an oxygen cut or a metal finish a mask layer; a photoresist layer formed on the mask layer; a photoresist pattern on the photoresist layer by using a mask; and the mask layer is smoked according to the photoresist pattern Opening. According to the above concept, the photodiode package pedestal of the present invention, the method of fabricating the substrate, can etch the opening by a fish-style rice or a dry etching. The method for fabricating the photodiode package base structure according to the other aspect of the present invention further includes the following: the base of the pure row _, the first surface, the second surface and the sidewalls of the via holes are formed Oxidizing the H-edge layer; forming the conductive reflective layer on the oxidized insulating layer of the first surface, the second surface, and the sidewalls of the via holes; forming a reflective layer on the reflective portion of the conductive reflective layer And forming a transparent protective layer on the reflective layer. According to the above concept, a method for fabricating a photodiode package base structure according to another aspect of the present invention, wherein the oxygen-cut insulating layer is formed by high temperature oxidation. According to the above concept, a method for fabricating a photodiode package base structure according to another aspect of the present invention, wherein the reflective layer is completed by a high-yield or silver material and is vapor-deposited or Weizhi The method is formed on the portion of the reflection 1376819. According to the above concept, the method for fabricating the photodiode package base structure according to another aspect of the present invention, the towel material is smear-small-small A-fossil insulation layer (S102), a nitrogen Silicone insulating layer (SixNy), a polyimide insulating layer (Polyimide), a poly(decyl methacrylate) insulating layer (p〇lymethyl)

Methacrylate: PMMA) or a photoresist layer sus and other materials to complete the transparent protective layer. The method for fabricating a photodiode package base structure according to the above aspect, wherein the conductive reflective layer is a Tiw/Cu/Ni/Au alloy, a Ti/Cu/Ni/Au alloy, and a Ti/ The Au/Ni/Au alloy or an A1Cu/Ni/Au alloy is formed by the following steps: defining a plating region on the yttria insulating layer of the first surface with a mask; and sputtering The conductive reflective layer is formed in the area of the key by plating or plating. According to the above concept, the photodiode package base structure according to another aspect of the present invention, wherein the photodiode die can be a light emitting diode die or a laser diode die. Another aspect of the present invention is a method for fabricating a photodiode package base structure, the method comprising the steps of: providing a substrate having a first surface and a second surface; respectively on the first surface of the substrate Forming a first mask layer and a second mask layer on the second surface; defining a first opening and a second opening on the second mask layer and the second mask layer respectively; The substrate is etched to form a conductive space between the first opening and the second opening, wherein one of the light-emitting diodes is placed between the first and second openings, and the at least two via holes are connected to the conductive vias. a bottom of the carrying space and the second surface of the substrate; and removing the mask layer and forming a conductive reflective layer on the first surface of the substrate and the bottom of the carrying space, the conductive reflective layer having a conductive And a reflecting portion, wherein the guiding portion passes through the guiding holes and extends to form the second surface of the substrate and is electrically connected to a photodiode die, and the reflecting portion is located The light two Between the grains and the carrier between the bottom $. According to the above concept, a method for fabricating a photodiode package base structure according to another aspect of the present invention, the substrate of the substrate may be in the lattice direction (clear, lattice direction (110), or lattice direction (1) U. The method of forming the photodiode package base structure described in the above aspect of the present invention, the method for forming the first opening and the second opening includes the following steps: the first step of the substrate Forming the surface with the second surface to form the first mask layer and the second mask layer by nitrogen cutting, oxygen cutting or metal forming; forming on the first mask layer and the f second mask layer respectively a first-sister layer and a second photoresist layer; a first photomask and a second photomask are used on the photoresist layers to define a first-light image and a second light pattern; The first photoresist pattern and the second photoresist pattern are engraved on the first mask layer and the second mask to form the first opening and the second opening. According to the above concept, the other aspect of the present invention Light-emitting diode package base structure manufacturing method 'the towel is the substrate system can be m (four) or a dry According to the above concept, the method for fabricating the photodiode package base 12 1376819 is further included in the following steps: the first surface of the substrate after the etching, the second a surface of the bearing space and a sidewall of the via holes are formed with a yttria insulating layer; the oxidized oxide layer on the first surface, the first surface, the bottom of the bearing space, and the sidewalls of the via holes Forming the conductive reflective layer thereon; forming a reflective layer on the reflective portion of the conductive reflective layer; and forming a transparent layer on the reflective layer. According to the above concept, the photodiode package base according to another aspect of the present disclosure The method for fabricating a structure in which the yttrium oxide insulating layer is formed by a high-temperature oxidation. According to the above concept, the method for fabricating a photodiode package pedestal structure according to the above aspect, wherein the reflective layer is made of light The knot with high reflectivity or silver material is completed and formed on the reflecting portion by a steaming or splashing clock. According to the above concept, the other side of the case The method for fabricating a photodiode package base structure is described in which the transparent protective layer is a cerium oxide insulating layer (SiO 2 ), a tantalum nitride insulating layer (SixNy), a polyimide insulating layer (Polyimide), Monopolymethacrylate insulating layer

The transparent protective layer is made of a material such as Methacrylate: PMMA or a photoresist layer SU8. According to the above concept, a photodiode package base structure manufacturing method according to another aspect of the present invention, wherein the conductive reflective layer is a TiW/Cu/Ni/Au alloy, a Ti/Cu/Ni/Au alloy, and a Ti/ The Au/Ni/Au alloy or an AlCu/Ni/Au alloy is formed by the following steps: • defining a plating region on the yttria insulating layer by the first photomask; and sputtering and plating Or a sputtering and plating method forms the conductive reflective layer in the plating region. According to the above concept, the photodiode package base structure described in another aspect of the present invention can be made of a light-emitting diode die or a laser diode die. [Embodiment] Please refer to the second figure, which is a cross-sectional view of the difficult-to-implement example of the pedestal structure for improving the missing structure of the conventional package base structure, and the package base structure 2 described in the present application It is mainly used in the encapsulation process of light-emitting diode grains or photodiode grains 2〇〇 of one of the laser diode grains. As can be clearly seen from the figure, the package base structure 2 mainly comprises a substrate 2 〇, a via hole 21, 22, a oxidized oxide layer 23 and a conductive reflective layer 24, wherein the substrate 20 is a first substrate surface 201 and a second surface 202, the via holes 21, 22 are through the substrate 20, and the top opening of the via holes 21, 22 is located at the first of the substrate 20 The bottom surface of the via hole 21, 22 is located on the second surface 202 of the substrate 20. The yttria insulating layer 23 is formed on the first surface 20 of the substrate 2 The conductive layer 24 is formed on the sidewall of the via hole 21, 22, and the conductive reflective layer 24 is formed on the yttrium oxide insulating layer 23 of the first surface 201 of the substrate 20. The conductive reflective layer 24 has a conductive portion 241 and a reflective portion 242, wherein the conductive portion 241 extends through the sidewall of the via hole 22 and extends to the oxidized oxide layer 23 of the second surface 1376819 202 of the substrate 2? The photodiode die 200 is carried on the reflecting portion 242. The package base structure described in this case will be further described below. According to the above description, the conductive reflective layer 24 included in the package base structure 2 is a TiW/Cu/Ni/Au alloy, a (10) lake/such as an alloy, a Ti/Au/Ni/Au alloy or an A1Cu/ The Ni/Au alloy is completed, and the photodiode die 2 is usually wire-bonded (the conductive wire included in the conductive reflective layer 24 is included in the wire 2 or the flip chip shown in FIG. 241 is electrically connected, and the conductive portion 241 of the conductive reflective layer 24 is spaced apart from the reflective portion 242 by a pitch of more than 2 〇 micrometers (4). Further, since the substrate 2G and the metal are completed by impurities The completed conductive reflective layer 24 has a problem of penetrating or absorbing a certain length of light, so that the reflection portion 242 carrying the photodiode die 2 成 can be layered with a high reflectivity of light. Or a silver material completes one of the reflective layers 25 to increase the overall light extraction efficiency of the completed photodiode package structure 2, if the reflection layer 25 is damaged in the subsequent process, we can also be in the reflective layer 25 Forming a very thin transparent protective layer 26 (thickness less than 1〇) Nm), and the transparent protective layer % may be a cerium oxide insulating layer (SiO 2 ), a tantalum nitride insulating layer (SixNy), a polyamidene insulating layer (P〇lyimide), a polyfluorenyl acryl acid? A material such as Polymethyl Methacrylate (PMMA) or a photoresist layer SU8 is used to protect the reflective layer 25. The above reflection layer 242 does not necessarily form the reflective layer 25 and The transparent protective layer 26, in the package base structure 2 described in the present invention, the reflecting portion 242 15 1376819 has a function of reflecting light, and the reflective layer 25 is formed thereon only to enhance the efficiency of light emission. This is not a necessary means, so please refer to the third figure (a) ~ (i), which is a schematic flow chart of the method of the packaged pedestal in the first preferred embodiment of the present invention. I can clearly see from the figure It can be seen that, as shown in the third figure (a), the mask layer 2010 is formed on the first surface 201 of the substrate 20 by using materials such as tantalum nitride, yttria or metal; (shown, a photoresist layer 2011 is formed on the mask layer 2010; As shown in FIG. (c), a photoresist pattern 2012, 2013 is defined on the photoresist layer 2〇11 by using a photomask (not shown in the figure); as shown in the third diagram (d), The mask patterns 2012 and 2013 etch the mask layer 2010 to form openings 2014 and 2015. As shown in FIG. 3(e), the substrate 2 is etched to form a turn-on at the openings 2014 and 2015. Holes 21, 22, and removing the mask layer 2010 and the photoresist layer 2011; as shown in the third figure (f), the first surface 2 〇1, the second surface 2 〇 2 of the substrate 20 The yttria insulating layer 23 is formed on the sidewalls of the via holes 21, 22; as shown in the third figure (g), the yttrium oxide on the sidewalls of the first surface 201, the second surface 202, and the via holes 21, 22 Formed on the insulating layer 23

TiW/Cu/Ni/Au or Ti/Cu/Ni/Au or Ti/Au/Ni/Au or

The conductive reflective layer 24 is completed by the AlCu/Ni/Au alloy; as shown in FIG. 3(h), the reflective layer 25 is formed on the reflective portion 242 of the conductive reflective layer 24; i) as shown, a ruthenium dioxide insulating layer (SiO 2 ), a tantalum nitride insulating layer (sixNy), a polyimide insulating layer (Polyimide), a polymethyl methacrylate insulating layer are formed on the reflective layer 25 . 16 1376819 (Polymethyl Methacrylate: PMMA) or photoresist layer material - into the county shield 26. The following is a description of the process steps described above. The manufacturing step of the upper riding base structure 2 is formed by the method of fine-high temperature oxidation of the oxidized oxide layer 23. The conductive reflection is in the form of a reticle (not shown in the figure). The first surface is twisted, and a galvanic oxide layer 23 defines a plated region (the electrode region covers the surface of the via hole) and is electroplated with a splash (or stipple) or Sputtering plus plating (Ε1_〇ι咖

The manner of Platmg)_plating zone_ becomes the conductive reflective layer 24. The reflective layer 25 is formed on the reflective portion 242 of the conductive reflective layer 24 by vapor deposition or sputtering. Through the above description, we can clearly understand that the package base structure 2 described in the present invention mainly forms the conductive reflective layer 24 having the conductive portion 241 and the reflective portion 242 on the substrate 2 having the via holes 21, 22, The conductive portion 241 passes through the sidewalls of the via hole 22, and the conductive portion 241 can be used for bonding, conducting, and conducting heat, and the reflecting portion 242 increases the light-emitting efficiency of the photodiode die 2 . Since the conductive reflective layer 24 simultaneously completes a reflective structure (such as the reflective portion 242) that can increase light extraction efficiency and a conductive structure (such as the conductive portion 241), the package base structure 2 described in the present invention can be avoided and lowered in the previous The reflective layer of the conventional packaged pedestal structure mentioned in the technology suffers from the possibility of damage during the manufacturing process, and since the manufacturing process of the packaged pedestal structure 2 described in the present invention is relatively simple, the manufacturing cost is effectively reduced. In addition, the package base structure 2 described in a preferred embodiment of the present invention has different lattice directions of stones such as (100), (110) or (111) depending on the orientation of the selected substrate. Depending on the base substrate, the surname pattern (such as using a wet surrogate or dry money column) or the manufacturing method, the package base structure 2a, 2b, 2c may be different as shown in the fourth figure (a) (b). The deformation. 3 矽 矽 请 请 请 请 请 请 请 请 请 请 请 请 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 As can be clearly seen from the figure, the package base structure 3 mainly comprises a substrate 30, a via hole 31, 32, a bearing space 33, a tantalum oxide insulating layer 34 and a conductive reflective layer 35, wherein the substrate 3〇 has a first surface 301 and a second surface 3〇2, and the top opening of the via hole=32 is located at the bottom of the bearing space 33, and the through hole

The oxidized oxide layer 34 is formed on the first surface 30 of the substrate 3, the second surface 302, and the slope of the bearing space %, and the surface 301 of the conductive reflective layer 35 constitutes the bearing The 332 and the sidewalls of the via holes 31 and 32 are formed on the beveled surface 33 of the first four-capacity space 33 of the substrate 30, and the conductive reflective layer 35 has a conductive portion. 351 and a reflecting portion 352, the conductive portion 351 is formed on the oxidized dream insulating layer of the second surface 3?2 of the substrate 30 through the sidewalls of the via holes 31, 32. The upper layer carries the photodiode grains 3〇〇. The package base structure shown in FIG. 2 is that the package base structure 3 described in the present specification has the bearing space % formed on the wire 30, and the top 18 1376819 opening is located on the substrate 30. The first surface 3〇1, the bearing space is mainly caused by the photodiode die 3GG being placed on the towel, and the completed photodiode package structure is enhanced by the inclined faces 331, 332 of the frame carrying space 33. The overall light output efficiency. Referring to the sixth embodiment (a) to (1), which is a flow chart of the method for fabricating the package base structure described in the second preferred embodiment of the present invention. As can be clearly seen from the figure, first, as shown in FIG. 6(a), the first surface 301 and the second surface 3〇2 of the substrate 30 are respectively formed of tantalum nitride, hafnium oxide or a mask layer 3〇1〇, 3011 made of a material such as metal; as shown in FIG. 6(b), a photoresist layer 3012, 3013 is formed on the mask layer 3〇1〇, 3〇11; As shown in FIG. 6(c), a photoresist pattern 3〇14, 3 is defined on the photoresist layers 3012 and 3013 by using a first photomask and a photomask (not shown in the figure). 〇15, 3016; as shown in the sixth figure (d), the mask layers 3010, 3011 are etched according to the photoresist patterns 3〇14, 3〇15, 3〇16 to form openings 3017, 3〇18, 3〇19; as shown in FIG. 6(e), the substrate 30 is etched, and the via holes 31, 32 of the bearing space 33 are formed at the openings 3017, 3018, and 3019, and the mask layer 3010, 3011 and the photoresist layers 3〇12, 3〇13 are removed, as shown in FIG. 6(f), the first surface 301, the second surface 3〇2, and the via holes 31 of the substrate 3〇 , 32 side walls and constituting the bearing space 33 The beveled surfaces 331, 332 and the bottom of the bearing space 33 are formed on the bottom of the bearing space 33; as shown in the sixth figure (g), the second surface 302, the bottom surface of the carrying space 33, and the inclined surface are formed on the first surface 30. 331, 332 on the yttria insulating layer 34 is formed with 19 1376819

TiW/Cu/Ni/Au or Ti/Cu/Ni/Au or Ti/Au/Ni/Au or

The conductive reflective layer 35 is completed by an AlCu/Ni/Au alloy; as shown in FIG. 6(h), the reflective layer 36 is formed on the reflective portion 352 of the conductive reflective layer 35; as shown in the sixth figure ( i) as shown, a ruthenium dioxide insulating layer (SiO 2 ), a tantalum nitride insulating layer (sixNy), a polyamidide insulating layer (Polyimide), a polymethyl methacrylate insulating layer are formed on the reflective layer 36 ( P〇lymethyl

The transparent protective layer 37 is made of a material such as Methacrylate: PMMA or a photoresist layer SU8. In view of the above, according to the concept of the package base structure 3 described in the second preferred embodiment, we also fabricate the package base structure 3a as shown in the seventh figure, that is, at the base 3〇a A surface 3〇1a and a second surface 302a are formed with a bearing space 33a, thereby completing a package base structure having a bearing space on both sides. In the different embodiments, we can clearly understand that the optical diode package structure completed by the technical means described in this case has indeed solved the defects in the conventional package structure, and thus completed the development of the case. main purpose. However, the invention may be modified by those skilled in the art and may be modified as described in the appended claims. [Simple description of the diagram] This case can be obtained through the following drawings and descriptions - a deeper understanding: The figure is a schematic cross-section of a conventional light-diode package base. 20 1376819

Reflective layer 25 Electrical wire 27 Second surface 202 Reflecting portion 242 Photoresist layer 2011 Opening 2014, 2015 Package base structure 3, 3a Substrate 30, 30a Bearing space 33 Conductive reflective layer 35 Transparent protective layer 37 Bevel 331, 332 Reflecting portion 352 Second surface 302, 302a photoresist layer 3012, 3013 photoresist pattern 3014, 3015, 3016 opening 3017, 3018, 3019 distance between conductive portion and reflective portion a, b transparent protective layer 26 first surface 201 conductive portion 241 mask layer 2010 photoresist pattern 2012, 2013 photodiode die 300 vias 31, 32 yttrium oxide insulating layer 34 reflective layer 36 electrical wires 38 conductive portion 351 first surface 301, 301a mask layer 3010, 3011 22

Claims (1)

1376819 X. Patent application garden: 1·- County pedestal structure 'for carrying-photodiode dies, the package pedestal structure comprises: a substrate having a first surface and a second surface; a pass-through manner, wherein the top opening of the via hole is located at the first surface of the substrate, the conductive paste σ is located at the second surface of the substrate; and the conductive-reflective layer of the earth is Forming on the first surface of the substrate and having a conductive portion and a reflective portion, wherein the conductive portion passes through the sidewall of the via hole and extends to form the second surface of the substrate and can be coupled to the photodiode The body grains are electrically connected, and the reflection portion is located between the photodiode grains and the first surface of the substrate. 2. The package base structure according to claim 1, wherein the substrate is a crystal lattice direction (100), a lattice direction (110), or a lattice direction (U1) . 3. The package base structure according to claim 1, wherein the conductive reflective layer is a TiW/Cu/Ni/Au alloy, a Ti/Cu/Ni/Au alloy, and a Ti/Au/Ni. /Au alloy or an AlCu/Ni/Au alloy. 4. The package base structure of claim i, wherein the conductive reflective layer has the conductive portion spaced from the reflective portion by more than 20 micrometers (um). 5. The package base structure of claim 1, further comprising: a yttria insulating layer formed on the first surface, the second surface, and the via hole of the substrate On the side wall; 23 1376819 a reflective layer 'is formed on the reflective portion of the conductive reflective layer; and a transparent protective layer' is formed on the reflective layer. 6. The package base structure of claim 5, wherein the reflective layer is made of an aluminum or silver material having a high light reflectance. 7. The package base structure according to claim 5, wherein the transparent protective layer is a cerium oxide insulating layer (Si〇2), a tantalum nitride insulating layer (SixNy), and an arion. The transparent protective layer is made of a material such as an amine insulating layer, a polymethyl methacrylate (PMMA) or a photoresist layer SU8. 8. The package base structure according to the application of (4) item i further includes a bearing space whose top opening is located on the first surface of the substrate, and the bottom portion thereof is used to carry the m pole body grain, and the bottom portion The top of the via is connected to the bottom of the carrying space. , ° Λ 9. If you apply for the special (4) package 8 as described in the package base structure, The top D of the load space in the soldier may be located on the second surface of the substrate. Say as the scope of patent application! In the shackle base structure, the top f-foil of the through hole is greater than, equal to, or smaller than the bottom opening. - ^ For example, in the middle of the material, the first part of the structure of the sealing block is: the polar body is electrically connected to the conductive portion of the reflective layer by means of _ wire bonding or "cladding". μ == = the package base structure described in the special item, wherein the light-pole body grain system can be a light-emitting diode or a grain.瑕日日 or a laser two-body crystal 24 1376819 13. A method for fabricating a photodiode package base structure, the method of the steps: 3 provides a substrate having a first surface and a second Forming a mask layer on the first surface of the substrate; defining an opening on the mask layer; engraving the substrate, and forming at least two via holes at the opening σ, a via hole is connected to the first surface of the substrate, the surface; and Removing the mask layer and forming a conductive reflective layer over the first surface of the substrate, the conductive reflective layer having a conductive portion and a reflective portion, wherein the conductive portion passes through the (four) and extends the through hole A second surface is formed on the substrate, and the surface is electrically connected to the photodiode die, and the reflective portion is located between the dimming diode die and the first surface of the substrate. 14. The method for fabricating a photodiode package pedestal structure according to claim 13, wherein the diametric substrate may be in a lattice direction (rigid), a lattice direction (1) 〇, or a lattice direction (111) Then, the wafer substrate. 15. If the application method (4) 13-position light dipole ugly pedestal structure manufacturing method 'the method of forming the σ s σ includes the following steps: on the first surface of the substrate a mask layer formed by oxygen cutting or metal; forming a photoresist layer on the mask layer; defining a photoresist pattern on the rail layer by using a mask; and illuminating the mask according to the photoresist pattern The curtain layer is engraved to form the opening. 16. The photodiode encapsulation base structure according to claim 13 of the patent application is stipulated in the method of 25 1376819, the t-substrate is the engraving or the _ dry money The method for fabricating the photodiode package base structure according to claim 13 further includes the following steps: ... the second and second of the substrate after the _ Forming a tantalum oxide insulating layer on the surface and sidewalls of the via holes; Forming the conductive reflective layer on the yttria insulating layer on a surface, the second surface, and the sidewalls of the via holes; forming a reflective layer on the reflective portion of the conductive reflective layer; and ??? 18. A method of fabricating a photodiode package base structure as described in claim 17 wherein the yttria insulating layer is formed by a high temperature oxidation. The method for fabricating a photodiode package base structure according to Item 17, wherein the reflective layer is formed by an aluminum or silver material having a high light reflectivity and formed by evaporation or sputtering. The method for fabricating a photodiode package base structure according to claim 17, wherein the transparent protective layer is made of a germanium dioxide insulating layer (Si〇2) and a tantalum nitride layer. The transparent layer (SixNy), a polyiguanide insulating layer (p〇lyimide), a polymethyl methacrylate-based insulating layer (p〇丨Methacrylate: PMMA) or a photoresist layer SU8 and the like Protective layer. 21. If applying for a patent The method for fabricating a photodiode package base structure according to item 17 is characterized in that the conductive reflective layer is a TiW/Cu/Ni/Au alloy, a Ti/Cu/Ni/Au alloy, and a Ti/Au/Ni alloy. /Au alloy or an A1Cu/Ni/Au alloy 26 1376819 The method of forming the method includes the following steps: Shovel area; 2 material-surface Wei-cut insulation layer into the plating or bribe plus the way of _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The granules may be-light-emitting diode dies or a photodiode package pedestal structure is defined by an electro-column step. The method comprises the following-substrate, which has a -surface-to-surface - respectively on the first surface of the substrate and the mask layer and the H curtain layer; the field field-the first port and the mask layer and the second mask layer define a "first opening" The substrate is engraved and further formed at the first opening σ and the second opening, respectively, and the second diode is placed in a bearing space and at least two via holes, and the material through hole The money passes through the bottom of the carrier (4) and the second surface of the substrate; and the mask layer is removed and a square salt-conductive reflective layer is formed on the first surface of the substrate and the bottom of the bearing space, the conductive reflective layer The utility model has a conductive portion and a reflecting portion, wherein the conductive portion passes through the sidewall of the conductive via and extends to form the second surface of the practice and is electrically connected with the light-distributing die, and the meal portion It is located between the photodiode die and the bottom of the 27 1376819 of the carrying space. 24' ^ (4) The U-shaped short base structure of the U-shaped range, '', wherein the substrate can be a crystal lattice direction (100), a lattice direction or a lattice direction (111). The step of forming the photodiode package base structure according to Item 23 of the present invention: the method for forming the opening and the second opening comprises the following: the first surface and the second surface are respectively formed The first mask layer and the second crest layer are formed by the nitrite or the metal; the i-layer and the second layer are separated on the first-mask layer and the second mask layer; First resisting - the first photomask and the second photomask on the photoresist layer, the first photoresist pattern and the second photoresist pattern; and the first photoresist pattern and the second photoresist pattern pair The second layer of the mask layer is formed by the second mask layer to form the first open-disc layer. The photodiode sealing method according to claim 23, wherein the substrate is available for use. _ or _ opening for etching. The method of the photodiode package base according to Item 23, further comprising the steps of: d, constructing the first surface of the substrate after silver etching, and the second Forming the conductive reflection on the bottom of the bearing space and the side wall of the via holes, and forming the conductive surface on the oxidized dream insulating layer of the first surface, the second surface, the carrying surface, the sidewall of the via hole, Guide 28 1376819 forms a reflective layer on the reflective portion of the conductive reflective layer; and 3* forms a transparent protective layer on the reflective layer. 28. The method of fabricating an optical diode package base structure according to claim 27, wherein the yttria insulating layer is formed by a high temperature oxidation. 29. The method for fabricating a photodiode package base structure according to claim 27, wherein the reflective layer is formed by aluminum or silver having a high light reflectivity and is vapor-deposited or sputtered. The method is formed on the reflecting portion. 30. The method for fabricating a photodiode package base structure according to claim 27, wherein the transparent protective layer is a oxidized chopped insulating layer (§2) and a tantalum nitride insulating layer (SixNy) The transparent protective layer is made of a material such as a polymethylene chloride insulating layer, a polyfluorene-based fine layer, an insulating layer, a MethaCrylate, or a photoresist layer SU8. 31. The method for fabricating a photodiode package base structure according to claim 27, wherein the conductive reflective layer is a TiW/Cu/Ni/Au alloy, Ti/fu/Ni/Au alloy, _ a Ti/Au/Ni/Au alloy or a (10) ritual alloy, the method of forming comprising the steps of: defining a plating region on the yttria insulating layer by using a first mask; and * sputtering and plating Or a sputtering and plating method forms the conductive reflective layer in the plating region. 32. The method of fabricating a photodiode package base structure according to claim 23, wherein the photodiode die is a light emitting diode die or a laser diode die. 29