1375000 六、發明說明： ， 【發明所屬之技術領威】 本發明係有關於〆種太陽能吸收膜組成材及其製造方 法’特別有關於一種高温太〶能選擇性吸收膜結構及其擎 造方法。 【先前技術】 在1990年開始建立太陽能選擇性吸收膜的雙陶 金層結構，即金屬-氮化鋁（M-A1N)和金屬-氣化° (Μ-Α12〇3) ’此為使用一種新型的雙乾材直流電磁控管電雙 藏鑛技術（Novel two-target DC magnetron plasma sputtering technology)來製備太陽能選擇性吸收膜可得到非常高的光 熱轉換效率。傳統之吸收膜製程大部份均為雙靶產生複合 膜，例如不鏽鋼與鋁的雙靶材製程，可製作陶瓷金屬膜 (Ce >^)做為選擇性吸收膜。適當的金屬陶莞複合膜厚度與 金屬刀率’可在太陽純射區域表現出高吸收而對熱輕射 域）表現㈣明㈣°該複合物沈積在對紅外線 、先基材上可以形成太陽能選擇性吸收膜。 利用開料殘峰材之製程技術，主要是 吸收膜。不^塊化不鏽鋼之太陽能選擇性 氧化不易與其他物;發常壓下具化學惰性，抗 不鏽鋼材料做為n 在真空賴製程中，將 擊出不鏽鋼中的 及功率即可使電聚轟 逄生反雇、破^出之原子在斑通入之反；《氣體 產生反應’並沉積於基板上广、通入之反應减 ^成不鏽鋼/氮化不鏽鋼吸收 1375000 膜。此不鏽鋼靶材的真空濺鍍製程幾乎無靶材毒化問題， 不須投入防毒化設備，可確保長時間濺鍍操作，並增加製 . 程上的穩定性，降低真空濺鍍製程的操作與硬體設置成本。 【發明内容】 本發明之實施例提供一種太陽能吸收膜組成材，包括 一氮化不銹鋼具有鈦成分均勻摻雜於其中。 本發明另一實施例提供一種太陽能吸收膜組成材的製 • 造方法，包括藉由真空濺鍍法形成一氮化不銹鋼，使其具 有鈦成分均勻摻雜於其中。 本發明之實施例另提供一種高溫太陽能選擇性吸收膜 結構，包括：一基材；以及一太陽能吸收膜設置於該基材 上；其中該太陽能吸收膜包括一氮化不銹鋼具有鈦成分均 勻摻雜於其中。 本發明另一實施例提供一種高溫太陽能選擇性吸收膜 結構的製造方法，包括：提供一基材；以及藉由真空濺鍍 • 法形成一太陽能吸收膜於該基材上；其中該太陽能吸收膜 包括一氮化不銹鋼具有鈦成分均勻摻雜於其中。 為使本發明能更明顯易懂，下文特舉實施例，並配合 所附圖式，作詳細說明如下： 【實施方式】 以下以各實施例詳細說明並伴隨著圖式說明之範例， 5 1375000 做為本發明之參考依據。在圖式或說明書描述中，相似或 相同之部分皆使用相同之圖號。且在圖式中，實施例之形 狀或是厚度可擴大，並以簡化或是方便標示。再者，圖式 中各元件之部分將以分別描述說明之，值得注意的是，圖 中未繪示或描述之元件，為所屬技術領域中具有通常知識 者所知的形式，另外，特定之實施例僅為揭示本發明使用 之特定方式，其並非用以限定本發明。 本發明之實施例提出一種高溫太陽能選擇性吸收膜結 構，其必須同時具備對可見光與近紅外光波段（300〜1800 φ nm)高吸收，對遠紅外光波段(>1800 nm)高反射之光學特性 外。同時，必須具備能忍受高溫環境下（500°C〜800°C)的操 作穩定性。 於一具體實施例中，以不鏽鋼靶（SUS321)和鈦（Ti)雙金 屬靶材，利用真利用真空濺鍍法製作太陽能選擇性吸收 膜。在真空濺鍍製程中，以SUS321材質為靶材，調整特 定反應氮氣(N2)及功率即可使電漿轟擊出SUS321金屬原 子(Fe，Ni, Cr，Ti)薄膜，被擊出之金屬原子與通入之反應氣 # 體（氮氣）產生反應，生成氮化不鏽鋼薄膜（SS-N)。同時控制 另一鈦靶材之原子濺擊程度，使鈦金屬摻雜於氮化不鏽鋼 薄膜中，同在不同濺擊功率與特定川條件下，產生不同鈦 金屬摻雜量與氮化程度，沉積於基板上形成金屬-陶瓷複合 膜，即陶金膜（Cermet Film)。且此不鏽鋼陶金膜對太陽光 有很好的吸收效果，並依據不鏽鋼材質特性估計耐溫程度 達500°C以上。同時為了在高溫的操作環境下使用，薄膜 在1500 nm以上波長需具有高反射特性，降低操作元件之 6 ι^/^υοϋ 放射性。认 a 於一貫施例中，同時利用Ti靶與SUS321同時在 下溅鍍，所製備的Ti/SS-N陶金膜有較廣之光學參數可 5〇 即折射率(n)與消光係數00。本專利的高溫太陽能選 及收膜製作方法，利用耐高溫之I化不鏽鋼薄膜與欽 光學薄膜設計，可肖测啦波長以上的光 失，；特性:！降低元件在高溫操作下的熱損 件在高溫的;境;為11化不•鋼之材質，可使元 τι<ε- 太陽能選擇性吸彳 ^ -二濺鍍製作高溫 m 收膜。不鏽鋼乾材有優越的抗錄，茅面 易毋化。亚且依據不鏽鋼材質的特 : 下操作使用。 該缚膜可在高溫 不鏽鋼塊材雖具有優越的化學惰性，而在真 、，.中右以適當的功率所產生的電漿來蟲整尤二 又” 將可表擊出不鏽鋼材質本身的金屬紅成，如鐵=材終 (Cr)、鎳(Ni)等金屬原子，或少量 e)、，。 原子可與通人之反紐氣體（例域出之金屬 板上沉積形錢化不鏽鋼_。在$ 鍵結，在基 把’提高捧雜Ti金屬的含量。作用在是本 = 同時… 可調性，達到可調整太陽光的截止“位置H料參數 膜可是用於高溫操作之元件。如第 n專 膜反射特性關係圖。 θ不，選擇性吸收 於其他具體實施例中，利用耐高 與鈦金屬摻雜，改變舰功率時 不鏽鋼薄膜 j改邊不鏽鋼中金屬與 7 1375000 鈦金屬被濺射出來之速率，搭配調整不同反應氣氛（氮氣） 可製作出不同金屬分率的氮化不鏽鋼膜層，此膜層亦為陶 瓷金屬之膜層。經光學薄膜設計，可對1500nm波長以上 的光進行高反射，即降低元件在高溫操作下的熱損失，可 提升集熱效果，做為太陽能選擇性吸收膜。同時膜層材質 具氮化不鏽鋼之熱穩定特性，可使元件在高溫的環境下操 作使用。 第2圖係顯示根據本發明之一實施例的高溫太陽能選 擇性吸收膜結構的製造方法的流程示意圖。請參閱第2 圖，於步驟S21中，首先製備不同金屬分率之SS-N陶金 薄膜。於一實施例中，SS-N陶金薄膜可由濺鍍法形成，濺 鍍的製程參數如表1所示： 表1 藏鐘條件 把材 不銹鋼（SUS321) 基材 玻璃 RF功率 150 W 濺鍍壓力 3 mTorr Ar氣體流率 40 seem N2氣體流率 0-10 seem 濺鍍時間 20 min 於步驟S22中，以橢圓儀分析SS-N陶金薄膜之光學 特性。接著，再選擇一最合適金屬分率之SS-N陶金薄膜， 並摻雜不同Ti金屬粒子製備Ti/SS-N陶金薄膜，如步驟S23 1375000 所示。於另一實施例中，摻雜不同Ti金屬粒子製備Ti/SS-N 陶金薄膜的製程參數如表2所示： 表2 濺鍍條件 乾材 不銹鋼(SUS321) Ti 玻璃 基材 RF功率(SS) 150 W DC功率(Ti) 5-75 W 濺鍍壓力 6 mTorr Ar氣體流率 40 seem C series : 10 seem 1^2氣體流率 D series : 5 seem 濺鍍時間 20 min 於步驟S24中，以橢圓儀分析Ti/SS-N陶金薄膜之光 學特性。接著，進行Ti/SS-N選擇性吸收膜匹配模擬（步驟 S24)以及Ti/SS-N選擇性吸收膜實際試製（步驟S26)。 根據本發明之具體實施例，高溫太陽能選擇性吸收膜 結構的製造方法主要可分四大步驟：（1)鍍製單層SS-N陶 金薄膜；（2)鍍製單層Ti/SS-N陶金薄膜；（3)步驟三：多 層Ti/SS-N選擇性吸收膜匹配模擬；（4)多層Ti/SS-N選擇 性吸收膜實際試製。即首先製備不同氮化程度的單層SS-N 陶金薄膜，經橢圓儀分析之後選擇較合適SS-N陶金薄膜之 金屬分率。再以SS-N陶金膜層為基質摻雜Ti金屬粒子， 9 1375000 製備單層Ti/SS-N陶金薄膜。接著經橢圓儀分析單層陶金 膜之後，將其光學常數數據匯入光學薄膜匹配程式進行多 層膜匹配，模擬得到該組光學常數下之最佳選擇性吸收膜 效能。最後利用匹配後的單層膜組別，進行多層膜實際試 製。以下詳細敘述各主要步驟。 SS-N陶金薄膜顏色外觀隨著氮氣流量的增加而變 淺。表3為SS-N陶金薄膜之光學特性及膜厚之分析結果。 表3 樣品編號 AOO A02 A04 A05 A10 N2流率 0 seem 2 seem 4 seem 5 seem 10 seem MVF(%) 39 29 13 2 0 模型 D+2L D+3L T-L T-L T-L 表面粗糙度 0 5.67 0 3.048 4.299 膜厚(nm) 120.6 85.3 98.4 61.536 62.998 MSE 2.929 7.08 10.75 6.271 5.253 註：D =Drude 振蘯子，L = Lorentz 振盈子，T-L = Tauc-Lorentz 振盪子，MSE=平均平方誤差。 第3圖和第4圖分別顯示本發明實施例的SS-N陶金薄 膜之折射率及消光係數關係示意圖。根據實驗結果顯示， 當氮氣流量由〇 seem增加達10 seem時，薄膜性質已經由 金屬膜變為完全氮化之陶瓷膜，故以此層作為Ti/SS-N陶 金複合膜層之基質。 ，據步驟一之實驗結果，選擇在氮氣流量5和10 sccm I之氮化不錄鋼陶I膜作為Τ··Ν陶金薄膜之基質，再 猎^ ,變不同的鈦耙材功率來控制Ti金屬的摻雜量多募。 左氮氣Λ丨L里5和10 sccm下之Ti/SS_N陶金薄膜顏色外觀， 隨著欽姆功率的增加，薄賴I貞色漸深。 第5圖和第6圖分別顯示單層Ti/SS-N陶金薄膜之折 射率和波長的關係及消光係數和波長的關係的示意圖。請 ，閱第5和6圖，在鈦靶材功率75w，氮氣流量5 sccm時 薄膜已壬現尚金屬性，故以此層作為高金屬分率（HMVF) 之吸收層。低金屬分率（LMVF)吸收層則選用以鈦靶材濺鍍 功率10W，氤氣流量1〇 sccm時之Ti/SS_N陶金薄膜。最 外層之抗反射層（AR)為完全氮化之氮化不銹鋼陶瓷膜於氮 氣机里10 seem下鍵製。另外，在本專利中所使用不鏽鋼 靶與鈦靶所濺鍍之膜層其光學常數（例如：折射率）有較顯1375000 VI. Description of the Invention: [Technical Leadership of the Invention] The present invention relates to a solar energy absorbing film composition material and a method for manufacturing the same, and particularly relates to a high temperature solar energy selective absorption film structure and a method for the same . [Prior Art] In 1990, the double-ceramic layer structure of solar selective absorbing film was established, namely metal-aluminum nitride (M-A1N) and metal-gasification ° (Μ-Α12〇3). The new two-component DC magnetron plasma sputtering technology to produce a solar selective absorption film can achieve very high photothermal conversion efficiency. Most of the conventional absorption film processes are dual-target composite films, such as stainless steel and aluminum dual-target processes, which can be used to make ceramic metal films (Ce > ^) as selective absorption films. Appropriate metal ceramics composite film thickness and metal knife rate 'can exhibit high absorption in the pure solar radiation area and the thermal light field) performance (four) Ming (four) ° The composite deposited on the infrared, the first substrate can form solar energy Selective absorption film. The process technology of using the residual peak material is mainly an absorption film. The solar selective oxidation of stainless steel is not easy to be combined with other materials; it is chemically inert under normal pressure, and is resistant to stainless steel as n. In the vacuum process, it will hit the stainless steel and the power will make the electricity gather. The atomic anti-employment and the broken atom are in the opposite direction of the plaque; the "gas generation reaction" is deposited on the substrate, and the reaction is reduced into stainless steel/nitrided stainless steel to absorb 1375000 film. The vacuum sputtering process of this stainless steel target has almost no target poisoning problem, and it does not need to be put into anti-virus equipment, which can ensure long-time sputtering operation, increase the stability of the process, and reduce the operation and hardness of the vacuum sputtering process. Body setup cost. SUMMARY OF THE INVENTION Embodiments of the present invention provide a solar absorbing film composition comprising a nitrided stainless steel having a titanium component uniformly doped therein. Another embodiment of the present invention provides a method of fabricating a solar absorbing film composition comprising forming a nitriding stainless steel by vacuum sputtering to uniformly dope a titanium component therein. An embodiment of the present invention further provides a high temperature solar selective absorbing film structure, comprising: a substrate; and a solar absorbing film disposed on the substrate; wherein the solar absorbing film comprises a nitrided stainless steel having a uniform doping of titanium In it. Another embodiment of the present invention provides a method for fabricating a high temperature solar selective absorbing film structure, comprising: providing a substrate; and forming a solar absorbing film on the substrate by a vacuum sputtering method; wherein the solar absorbing film A nitrided stainless steel is included having a titanium component uniformly doped therein. In order to make the present invention more apparent, the following detailed description of the embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It is used as a reference for the present invention. In the drawings or the description of the specification, the same drawing numbers are used for similar or identical parts. In the drawings, the shape or thickness of the embodiment may be expanded and simplified or conveniently indicated. In addition, the components of the drawings will be described separately, and it is noted that the components not shown or described in the drawings are known to those of ordinary skill in the art, and in particular, The examples are merely illustrative of specific ways of using the invention and are not intended to limit the invention. Embodiments of the present invention provide a high-temperature solar selective absorbing film structure which must have high absorption in the visible light and near-infrared light bands (300 to 1800 φ nm) and high reflection in the far-infrared light band (> 1800 nm). Outside the optical properties. At the same time, it must be able to withstand the operational stability in high temperature environments (500 ° C ~ 800 ° C). In one embodiment, a solar selective absorbing film is formed by vacuum sputtering using a stainless steel target (SUS321) and a titanium (Ti) double metal target. In the vacuum sputtering process, using SUS321 as the target, adjusting the specific reaction nitrogen (N2) and power, the plasma can bombard the SUS321 metal atom (Fe, Ni, Cr, Ti) film, and the metal atom is knocked out. The reaction with the passed gas (nitrogen) generates a nitriding stainless steel film (SS-N). At the same time controlling the atomic splashing degree of another titanium target, the titanium metal is doped into the nitriding stainless steel film, and the different titanium metal doping amount and nitriding degree are generated under different sputtering power and specific conditions. A metal-ceramic composite film, that is, a Cermet Film, is formed on the substrate. Moreover, the stainless steel pottery gold film has a good absorption effect on sunlight, and the temperature resistance is estimated to be 500 ° C or more according to the characteristics of the stainless steel material. At the same time, in order to be used in a high-temperature operating environment, the film needs to have high reflection characteristics at wavelengths above 1500 nm, and reduce the radioactivity of the operating elements of 6 ι^/^υοϋ. It is recognized that in a consistent application, the Ti target and the SUS321 are simultaneously sputtered at the same time, and the prepared Ti/SS-N ceramic film has a wide optical parameter of 5 〇, that is, the refractive index (n) and the extinction coefficient 00. The high-temperature solar energy selection and film-making method of the patent uses the high-temperature resistant I-stainless steel film and the optical film design to detect the light loss above the wavelength; characteristics:! Reducing the heat loss of the component under high temperature operation at high temperature; for the material of 11 steel, it can make the high temperature m film by the τι<ε-solar selective suction -^-sputtering. Stainless steel dry materials have superior anti-recording, and the dough is easy to be smashed. It is based on stainless steel: It is used underneath. The bond film can be superior in chemical inertness to the high-temperature stainless steel block, and the plasma generated by the appropriate power in the right and the right can be used to smash the metal of the stainless steel itself. Red, such as iron = metal (Cr), nickel (Ni) and other metal atoms, or a small amount of e),. Atomic and the anti-new gas of the people (such as the metal plate deposited on the metal plate _ In the $ bond, the base is 'improved to hold the content of Ti metal. The effect is on this = at the same time... Adjustable to achieve the cutoff of the adjustable sunlight "position H material parameter film is the component used for high temperature operation. For example, the n-th film reflection characteristic relationship diagram. θ No, selective absorption in other specific examples, using high resistance and titanium metal doping, changing the ship power when the stainless steel film j is changed to the side of the stainless steel metal and 7 1375000 titanium metal is The rate of sputtering is adjusted with different reaction atmospheres (nitrogen) to produce a nitrided stainless steel film with different metal fractions. This film is also a ceramic metal film. It can be designed for optical wavelengths above 1500nm. Light high anti The heat loss of the component under high temperature operation can be improved, and the heat collecting effect can be improved as a solar selective absorbing film. At the same time, the film material has the thermal stability characteristic of nitriding stainless steel, and the component can be operated under high temperature environment. 2 is a schematic flow chart showing a method of manufacturing a high-temperature solar selective absorbing film structure according to an embodiment of the present invention. Referring to FIG. 2, in step S21, SS-N Taojin with different metal fractions is first prepared. In one embodiment, the SS-N ceramic film can be formed by sputtering, and the process parameters of the sputtering are shown in Table 1: Table 1 Tibetan clock condition stainless steel (SUS321) substrate glass RF power 150 W splash Plating pressure 3 mTorr Ar gas flow rate 40 seem N2 gas flow rate 0-10 seem Sputtering time 20 min In step S22, the optical properties of the SS-N ceramic film are analyzed by an ellipsometer. Next, select the most suitable metal. The fractional SS-N ceramic film is doped with different Ti metal particles to prepare a Ti/SS-N ceramic film, as shown in step S23 1375000. In another embodiment, different Ti metal particles are doped to prepare Ti/ SS-N Tao The process parameters of the film are shown in Table 2: Table 2 Sputtering conditions Dry stainless steel (SUS321) Ti Glass substrate RF power (SS) 150 W DC power (Ti) 5-75 W Sputtering pressure 6 mTorr Ar gas flow rate 40 seem C series : 10 seem 1^2 gas flow rate D series : 5 seem Sputtering time 20 min In step S24, the optical properties of the Ti/SS-N ceramic film are analyzed by ellipsometry. Next, a Ti/SS-N selective absorption film matching simulation (step S24) and a preliminary trial production of the Ti/SS-N selective absorption film were carried out (step S26). According to a specific embodiment of the present invention, the manufacturing method of the high-temperature solar selective absorption film structure can be mainly divided into four steps: (1) plating a single-layer SS-N ceramic gold film; (2) plating a single layer Ti/SS- N pottery gold film; (3) Step 3: Multi-layer Ti/SS-N selective absorption film matching simulation; (4) Multi-layer Ti/SS-N selective absorption film actual trial production. That is, a single layer of SS-N ceramic gold film with different degrees of nitridation was first prepared, and the metal fraction of the suitable SS-N ceramic film was selected after analysis by ellipsometry. Then, Ti-metal particles were doped with SS-N ceramic film, and a single layer of Ti/SS-N ceramic film was prepared by 9 1375000. After analyzing the monolayer gold film by ellipsometry, the optical constant data was imported into the optical film matching program for multi-layer film matching, and the optimal selective absorption film efficiency under the optical constants was simulated. Finally, the actual trial of the multilayer film was carried out using the matched single layer film group. The main steps are described in detail below. The color appearance of the SS-N pottery gold film became lighter as the nitrogen flow rate increased. Table 3 shows the results of analysis of the optical properties and film thickness of the SS-N ceramic film. Table 3 Sample No. AOO A02 A04 A05 A10 N2 flow rate 0 seem 2 seem 4 seem 5 seem 10 seem MVF(%) 39 29 13 2 0 Model D+2L D+3L TL TL TL Surface roughness 0 5.67 0 3.048 4.299 Membrane Thickness (nm) 120.6 85.3 98.4 61.536 62.998 MSE 2.929 7.08 10.75 6.271 5.253 Note: D =Drude vibrator, L = Lorentz vibrator, TL = Tauc-Lorentz oscillator, MSE = mean squared error. Fig. 3 and Fig. 4 are views showing the relationship between the refractive index and the extinction coefficient of the SS-N ceramic gold film of the embodiment of the present invention, respectively. According to the experimental results, when the nitrogen flow rate is increased from 〇 seem to 10 seem, the film properties have changed from a metal film to a completely nitrided ceramic film, so this layer serves as a matrix for the Ti/SS-N cermet composite film layer. According to the experimental results of step 1, the nitriding steel I film of nitrogen gas flow rate of 5 and 10 sccm I is selected as the matrix of the Τ·· Ν Ν gold film, and then the power of the titanium bismuth is controlled. The doping amount of Ti metal is increased. The appearance of the Ti/SS_N pottery gold film at 5 and 10 sccm in the left nitrogen gas Λ丨L, with the increase of the power of the chin, the thin ray I gradually deepened. Fig. 5 and Fig. 6 respectively show the relationship between the refractive index and the wavelength of the single-layer Ti/SS-N ceramic film and the relationship between the extinction coefficient and the wavelength. Please refer to Figures 5 and 6. In the case of a titanium target power of 75 W and a nitrogen flow rate of 5 sccm, the film is already metallic, so this layer is used as an absorption layer of high metal fraction (HMVF). For the low metal fraction (LMVF) absorber layer, a Ti/SS_N ceramic film with a sputtering power of 10 W and a helium flow rate of 1 〇 sccm is used. The outermost anti-reflective layer (AR) is a fully nitrided nitrided stainless steel ceramic membrane that is keyed in a nitrogen machine. In addition, the optical constants (for example, refractive index) of the film layer sputtered by the stainless steel target and the titanium target used in this patent are more obvious.
著的分佈，可為2.0〜3.3，並預期若提高Ti功率將可提高 折射率。此寬廣的折射率分佈特性有利於進行薄膜匹配， 來達到可調整太陽光的戴止波長位置之功能，使薄膜可適 用於高溫操作之元件。 多層膜各層膜之選擇依據橢圓儀分析之光學常數，高 金屬分，之《及收層選用DG75，低金屬分率吸收層則選用 C010最外層之抗反射層為c〇〇〇。經光學模擬之吸收率可 = 8562在波長接近18〇〇 nm位置其反射率有開始上升 ::反::性為選擇性吸收膜之特徵，即在紅外光區波段 有问反射率。目前料學常數取得範圍為〈誦μ，因此 11 1375000 模擬區間為<1800 nm。表4為多層Ti/sS-N選擇性吸收膜 匹配模擬結果’第一層高金屬分率之吸收層為D075，厚度 7〇nm;第二層低金屬分率之吸收層為c〇1〇，厚度3〇nm ; 最外層的抗反射層為C000，膜厚70 nm。 表4 樣品編5虎. Ti靶材功率 厚度（nm) 模擬Q： s AR(C000) ow 70 LMVF(COIO) low 30 HMVF(D075) 75 W 70 Total 170 0.86 本實施例是利用典型的3層膜進行模擬匹配，在模擬 過程中，亦發現若用2層膜(HMVF與AR層）模擬，即可達 到相同吸收率達0.86之效果。並且若未來取得更多單層膜 之數據，則可獲得更高之吸收效能。 3 ' 根據多層Ti/SS-N選擇性吸收膜之模擬結 考’實際進行藏鑛實驗’製備多層Ti/SS_N選擇性吸收膜· 多層Ti/SS-N選擇性吸收膜之各層崎條件製備條件如表 5所列。 表5 樣品編號 金屬反射子 (D075)The distribution can be 2.0 to 3.3, and it is expected that if the Ti power is increased, the refractive index can be increased. This wide refractive index profile facilitates film matching to achieve the ability to adjust the wavelength of the wear wavelength of sunlight, making the film suitable for high temperature operation. The choice of the film of each layer of the multilayer film is based on the optical constant of the ellipsometry analysis, the high metal content, and the DG75 is used for the layer, and the anti-reflection layer of the outermost layer of C010 is c〇〇〇 for the low-metal absorption layer. The absorbance of the optical simulation can be = 8562, and its reflectivity starts to rise at a wavelength close to 18 〇〇 nm. :: Anti-:: is a characteristic of the selective absorption film, that is, the reflectance in the infrared band. At present, the range of the material constant is <诵μ, so the 11 1375000 simulation interval is <1800 nm. Table 4 shows the simulation results of multi-layer Ti/sS-N selective absorption film matching. 'The first layer of high metal fraction has an absorption layer of D075 and the thickness is 7〇nm; the second layer of low metal fraction has an absorption layer of c〇1〇. The thickness is 3〇nm; the outermost anti-reflection layer is C000 and the film thickness is 70 nm. Table 4 Samples 5 Tiger. Ti target power thickness (nm) Simulation Q: s AR(C000) ow 70 LMVF(COIO) low 30 HMVF(D075) 75 W 70 Total 170 0.86 This example uses a typical 3 layers The film was simulated and matched. During the simulation, it was also found that if the two layers of film (HMVF and AR layer) were used for simulation, the same absorption rate of 0.86 could be achieved. And if more single-layer film data is obtained in the future, higher absorption efficiency can be obtained. 3 'Preparation of various layers of Ti/SS_N selective absorption film based on the simulation of multi-layer Ti/SS-N selective absorption film 'actual mining experiment' · Multi-layer Ti/SS-N selective absorption film As listed in Table 5. Table 5 Sample No. Metal Reflector (D075)
LMVF (C010)LMVF (C010)
AR (C000) 12 1375000AR (C000) 12 1375000
Ar 流率（seem) 40 40 40 40 N2 流率（seem) 0 5 10 10 SS靶材功率 (RF) 250 150 150 150 Ti靶材功率 (DC) 0 75 10 0 濺鍍時間 (min) 20 20 10 34.5 厚度（nm) 300 70 30 70 多層Ti/SS-N選擇性吸收膜之顏色外觀為藍紫色，實 際測量其吸收率為0.85，放射率為0.48，多層Ti/SS-N選 擇性吸收膜之模擬與實驗結果整理如表6。 . 表6 樣品編號 Ti靶材功率 厚度(nm) 模擬s/實驗〇： e AR(COOO) 0 w 70 LMVF(COIO) 10W 30 HMVF(D075) 75 W 70 Total 170 0.86/0.85 根據本發明之具體實施例，一種太陽能吸收膜組成 材，包括一氮化不銹鋼具有鈦成分均勻摻雜於其中。該太 陽能吸收膜組成材的折射率（η)範圍大抵介於2.0-3.3、消光 13 1375000 係數(k)的範圍大抵介於0 -1.2。該太陽能吸收膜組成材的金 屬分率的範圍大抵介於0-45%，其中該不銹鋼為SUS321 不銹鋼。 第7A圖係顯示本發明之一實施例的高溫太陽能選擇 性吸收膜結構的剖面示意圖。於第7A圖中，高溫太陽能 選擇性吸收膜結構包括一太陽能吸收膜組成材110設置於 一基板100上。該太陽能吸收膜組成材，包括一氮化不銹 鋼具有鈦成分均勻摻雜於其中。 於另一實施例中，一種太陽能吸收膜組成材的製造方 法包括藉由雙靶材真空濺鍍法形成一氮化不銹鋼，使其具 有鈦成分均勻摻雜於其中。 第7B圖係顯示本發明另一實施例的高溫太陽能選擇 性吸收膜結構的剖面示意圖。於第7B圖中，高溫太陽能選 擇性吸收膜結構包括一第一吸收膜112設置於基板100 上，及一第二吸收膜114設置於第一吸收膜112上。第一 吸收膜112具有一第一鈦金屬分率且一第二吸收膜114具 有一第二鈦金屬分率，其中該第一鈦金屬分率大於該第二 鈦金屬分率。基板100的材質包括不銹鋼（SS)或鈦(Ti)，做 為反射層。 高溫太陽能選擇性吸收膜結構更包括一第三吸收膜 116設置於第二吸收膜114上，及一第四吸收膜118(做為 抗反射層）設置於第三吸收膜118上。第三吸收膜116具有 一第一氮化鈦陶瓷分率及第四吸收膜118具有一第二氮化 鈦陶瓷分率，其中該第一氮化鈦陶瓷分率小於該第二氮化 鈦陶竞分率。 14 1375000 於另一實施例中，一種高溫太陽能選擇性吸收膜結構 的製造方法，包括提供一基材，以及藉由真空濺鍍法形成 一太陽能吸收膜於該基材上，其中該太陽能吸收膜包括一 氮化不銹鋼具有鈦成分均勻摻雜於其中。 應注意的是，本發明實施例之太陽能吸收膜組成材是 以氮化不銹鋼為基質，其高溫穩定性優越。並且，藉由Ti 提供較廣之光學參數可調控，即折射率（η)與消光係數(k)， 可有效地調控截止波長。 本發明雖以較佳實施例揭露如上，然其並非用以限定 本發明的範圍，任何所屬技術領域中具有通常知識者，在 不脫離本發明之精神和範圍内，當可做些許的更動與潤 飾，因此本發明之保護範圍當視後附之申請專利範圍所界 定者為準。 15 1375000 【圖式簡單說明】 第1圖係顯示選擇性吸收膜的反射特性的關係示意 圖。 第2圖係顯示根據本發明之一實施例的高溫太陽能選 擇性吸收膜結構的製造方法的流程示意圖。 第3圖和第4圖分別顯示本發明實施例的SS_N陶金薄 膜之折射率及消光係數關係示意圖。 第5圖和第6圖分別顯示單層Ti/SS_N陶金薄膜之折 射率和波長的關係及消光係數和波長的關係的示意圖。 第7A圖係顯示本發明之一實施例的高溫太陽能選擇 性吸收膜結構的剖面示意圖。 第7B圖係顯示本發明另一實施例的高溫太陽能選擇 性吸收膜結構的剖面示意圖。 【主要元件符號說明】 S21-S26〜製程步驟； 100〜基板； 110〜太陽能吸收膜組成材; 112〜第一吸收膜； 114〜第二吸收膜； 116〜第三吸收膜； 118〜第四吸收膜。Ar Flow rate (seem) 40 40 40 40 N2 Flow rate (seem) 0 5 10 10 SS target power (RF) 250 150 150 150 Ti target power (DC) 0 75 10 0 Sputter time (min) 20 20 10 34.5 Thickness (nm) 300 70 30 70 The multilayer Ti/SS-N selective absorbing film has a blue-violet appearance and is actually measured to have an absorbance of 0.85 and an emissivity of 0.48. Multilayer Ti/SS-N selective absorbing film The simulation and experimental results are summarized in Table 6. Table 6 Sample No. Ti Target Power Thickness (nm) Simulation s / Experiment 〇: e AR(COOO) 0 w 70 LMVF(COIO) 10W 30 HMVF(D075) 75 W 70 Total 170 0.86/0.85 According to the invention In an embodiment, a solar absorbing film composition comprising a nitrided stainless steel having a titanium component uniformly doped therein. The refractive index (η) of the solar absorbing film composition is generally in the range of 2.0-3.3, and the extinction 13 1375000 coefficient (k) is in the range of 0 - 1.2. The solar absorption film composition has a metal fraction ranging from 0 to 45%, wherein the stainless steel is SUS321 stainless steel. Fig. 7A is a schematic cross-sectional view showing the structure of a high-temperature solar selective absorbing film according to an embodiment of the present invention. In Fig. 7A, the high temperature solar selective absorbing film structure comprises a solar absorbing film composition 110 disposed on a substrate 100. The solar absorbing film composition material, including a nitrided stainless steel, has a titanium component uniformly doped therein. In another embodiment, a method of fabricating a solar absorbing film composition comprises forming a nitrided stainless steel by double-target vacuum sputtering to uniformly dope a titanium component therein. Fig. 7B is a schematic cross-sectional view showing the structure of a high-temperature solar selective absorbing film according to another embodiment of the present invention. In FIG. 7B, the high-temperature solar selective absorption film structure includes a first absorption film 112 disposed on the substrate 100, and a second absorption film 114 disposed on the first absorption film 112. The first absorbing film 112 has a first titanium metal fraction and the second absorbing film 114 has a second titanium metal fraction, wherein the first titanium metal fraction is greater than the second titanium metal fraction. The material of the substrate 100 includes stainless steel (SS) or titanium (Ti) as a reflective layer. The high-temperature solar selective absorption film structure further includes a third absorption film 116 disposed on the second absorption film 114, and a fourth absorption film 118 (as an anti-reflection layer) disposed on the third absorption film 118. The third absorption film 116 has a first titanium nitride ceramic fraction and the fourth absorption film 118 has a second titanium nitride ceramic fraction, wherein the first titanium nitride ceramic fraction is smaller than the second titanium nitride ceramic The score of the competition. 14 1375000. In another embodiment, a method of fabricating a high temperature solar selective absorbing film structure, comprising: providing a substrate, and forming a solar absorbing film on the substrate by vacuum sputtering, wherein the solar absorbing film A nitrided stainless steel is included having a titanium component uniformly doped therein. It should be noted that the solar absorbing film composition of the embodiment of the present invention is based on nitrided stainless steel and has excellent high temperature stability. Moreover, Ti can provide a wide range of optical parameters, namely, refractive index (η) and extinction coefficient (k), which can effectively control the cutoff wavelength. The present invention has been disclosed in the above preferred embodiments, and is not intended to limit the scope of the present invention. Any one of ordinary skill in the art can make a few changes without departing from the spirit and scope of the invention. The scope of protection of the present invention is therefore defined by the scope of the appended claims. 15 1375000 [Simple description of the drawing] Fig. 1 is a schematic diagram showing the relationship between the reflection characteristics of the selective absorption film. Fig. 2 is a flow chart showing a method of manufacturing a high-temperature solar selective absorbing film structure according to an embodiment of the present invention. Fig. 3 and Fig. 4 are views showing the relationship between the refractive index and the extinction coefficient of the SS_N ceramic film of the embodiment of the present invention, respectively. Fig. 5 and Fig. 6 respectively show the relationship between the refractive index and the wavelength of the single-layer Ti/SS_N ceramic film and the relationship between the extinction coefficient and the wavelength. Fig. 7A is a schematic cross-sectional view showing the structure of a high-temperature solar selective absorbing film according to an embodiment of the present invention. Fig. 7B is a schematic cross-sectional view showing the structure of a high-temperature solar selective absorbing film according to another embodiment of the present invention. [Main component symbol description] S21-S26~ process steps; 100~ substrate; 110~ solar absorption film composition; 112~first absorption film; 114~ second absorption film; 116~third absorption film; Absorbing film.