[go: up one dir, main page]

TWI372418B - Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same - Google Patents

Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same

Info

Publication number
TWI372418B
TWI372418B TW097131039A TW97131039A TWI372418B TW I372418 B TWI372418 B TW I372418B TW 097131039 A TW097131039 A TW 097131039A TW 97131039 A TW97131039 A TW 97131039A TW I372418 B TWI372418 B TW I372418B
Authority
TW
Taiwan
Prior art keywords
same
film formed
nanostructured thin
angle deposition
utilizing oblique
Prior art date
Application number
TW097131039A
Other languages
English (en)
Other versions
TW201007818A (en
Inventor
Chia Hua Chang
Chin Sheng Yang
Ching Hua Chua
Pei Chen Yu
Hao Chung Kuo
Original Assignee
Univ Nat Chiao Tung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Chiao Tung filed Critical Univ Nat Chiao Tung
Priority to TW097131039A priority Critical patent/TWI372418B/zh
Priority to US12/289,816 priority patent/US7998539B2/en
Priority to JP2008297210A priority patent/JP5621955B2/ja
Publication of TW201007818A publication Critical patent/TW201007818A/zh
Priority to US12/822,658 priority patent/US20100261001A1/en
Application granted granted Critical
Publication of TWI372418B publication Critical patent/TWI372418B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C23C14/226—Oblique incidence of vaporised material on substrate in order to form films with columnar structure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249978—Voids specified as micro

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Manufacturing Of Electric Cables (AREA)
TW097131039A 2008-08-14 2008-08-14 Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same TWI372418B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW097131039A TWI372418B (en) 2008-08-14 2008-08-14 Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same
US12/289,816 US7998539B2 (en) 2008-08-14 2008-11-05 Method of forming thin-film structure by oblique-angle deposition
JP2008297210A JP5621955B2 (ja) 2008-08-14 2008-11-20 斜め堆積を用いて生成されたナノ構造薄膜およびその方法
US12/822,658 US20100261001A1 (en) 2008-08-14 2010-06-24 Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW097131039A TWI372418B (en) 2008-08-14 2008-08-14 Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same

Publications (2)

Publication Number Publication Date
TW201007818A TW201007818A (en) 2010-02-16
TWI372418B true TWI372418B (en) 2012-09-11

Family

ID=41681456

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097131039A TWI372418B (en) 2008-08-14 2008-08-14 Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same

Country Status (3)

Country Link
US (2) US7998539B2 (zh)
JP (1) JP5621955B2 (zh)
TW (1) TWI372418B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9253890B2 (en) 2013-08-16 2016-02-02 Industrial Technology Research Institute Patterned conductive film, method of fabricating the same, and application thereof

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8110435B2 (en) * 2008-12-18 2012-02-07 Jusung Engineering Co., Ltd. Method and apparatus for manufacturing semiconductor device
JP5587970B2 (ja) 2010-02-26 2014-09-10 日本曹達株式会社 テトラゾリルオキシム誘導体またはその塩、ならびに殺菌剤
KR101217786B1 (ko) * 2010-05-20 2013-01-02 포항공과대학교 산학협력단 전자선 증착장비를 이용한 인듐 주석 산화물 나노 막대 제조 방법
KR101243633B1 (ko) * 2010-05-20 2013-03-14 포항공과대학교 산학협력단 전자선 증착 장비를 이용한 산화아연 나노 막대 제조방법
JP5792523B2 (ja) 2010-06-18 2015-10-14 株式会社半導体エネルギー研究所 光電変換装置の作製方法
TW201211529A (en) 2010-09-01 2012-03-16 Univ Nat Chiao Tung Ion sensor
CN102074654B (zh) * 2010-11-23 2012-06-27 中国科学院半导体研究所 提高聚合物太阳电池效率的制备方法
ES2642987T3 (es) * 2011-04-07 2017-11-20 Novartis Ag Estructuras ópticas con características nanoestructurales y métodos de utilización y fabricación
US9001322B2 (en) 2011-08-30 2015-04-07 Cornell University Surface enhanced raman scattering (SERS) apparatus, methods and applications
CN104160311A (zh) * 2012-01-04 2014-11-19 瑞达克斯科技有限公司 使用纳米多孔结晶材料的光学薄膜层之结构及方法
US9651721B2 (en) 2012-08-27 2017-05-16 Avery Dennison Corporation Retroreflector with low refractive index backing
CN103031522B (zh) * 2012-12-25 2015-06-03 大连理工大学 一种渐变性能铝掺杂氧化锌薄膜的制备方法
HK1177096A2 (zh) * 2013-04-16 2013-08-09 美高国际科技有限公司 一种透光氧化铝基板及其制备方法
CN103409723A (zh) * 2013-06-29 2013-11-27 电子科技大学 薄膜沉积制备方法以及纳米纤维结构柔性缓冲层制备方法
KR101499496B1 (ko) 2013-07-19 2015-03-18 국립대학법인 울산과학기술대학교 산학협력단 나노크기의 원통형 플라즈모닉 메타구조체 제조방법
JP6380932B2 (ja) * 2014-10-21 2018-08-29 株式会社日立製作所 ナノオーダ構造体の製造方法および製造装置
US11697885B2 (en) 2016-09-19 2023-07-11 University Of Central Florida Research Foundation, Inc. Production of nanoporous films
CN109103090B (zh) * 2017-06-21 2020-12-04 清华大学 纳米带的制备方法
CN109103101B (zh) * 2017-06-21 2020-09-29 清华大学 纳米微结构的制备方法
US11075079B2 (en) * 2017-11-21 2021-07-27 Taiwan Semiconductor Manufacturing Co., Ltd. Directional deposition for semiconductor fabrication
CN110129749A (zh) * 2019-05-13 2019-08-16 江西沃格光电股份有限公司 渐变色镀膜基板及其制备方法、镀膜治具
CN110208245B (zh) * 2019-06-19 2020-09-08 清华大学 一种纸基柔性表面增强拉曼散射效应基片及其制备方法
CN112760603A (zh) * 2019-11-01 2021-05-07 有研工程技术研究院有限公司 一种多孔柱状氧化铟气敏薄膜的制备方法
KR102385038B1 (ko) * 2020-03-16 2022-04-12 티오에스주식회사 단결정 금속산화물 반도체 에피 성장 장치
CN115188900A (zh) * 2022-07-26 2022-10-14 深圳技术大学 一种提高无机钙钛矿太阳能电池光电转换效率的方法
CN115156524B (zh) * 2022-08-18 2024-07-05 中南大学 一种异位成核的双层MoS2纳米片及其制备方法
CN115466927B (zh) * 2022-08-31 2023-07-18 安徽其芒光电科技有限公司 薄膜沉积装置及薄膜沉积方法
CN116288177B (zh) * 2023-03-27 2025-08-19 江西兆驰半导体有限公司 一种ito薄膜及制备方法、led芯片
CN116855899B (zh) * 2023-07-25 2025-09-26 西安邮电大学 一种具有自组装孔洞结构掺铟β相氧化镓薄膜的制备方法
CN116891998A (zh) * 2023-09-11 2023-10-17 通威微电子有限公司 中继环碳化钽镀膜设备和方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4744636A (en) * 1987-05-05 1988-05-17 Tektronix, Inc. Electron beam-addressed liquid crystal cell having coating layer for secondary electron emission
JP3506080B2 (ja) * 1998-12-08 2004-03-15 株式会社豊田中央研究所 半導体電極およびその製造方法
JP2001180920A (ja) * 1999-12-24 2001-07-03 Nec Corp ナノチューブの加工方法及び電界放出型冷陰極の製造方法並びに表示装置の製造方法
JP2004045784A (ja) * 2002-07-12 2004-02-12 Sony Corp 液晶パネルおよびその製造方法
WO2005003402A2 (en) * 2003-07-03 2005-01-13 Ifire Technology Corp. Hydrogen sulfide injection method for phosphor deposition
WO2005013365A2 (en) * 2003-07-30 2005-02-10 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device, light emitting module, and lighting apparatus
US7203001B2 (en) * 2003-12-19 2007-04-10 Nanoopto Corporation Optical retarders and related devices and systems
US20050275944A1 (en) * 2004-06-11 2005-12-15 Wang Jian J Optical films and methods of making the same
WO2006135375A2 (en) * 2004-07-21 2006-12-21 The Regents Of The University Of California Catalytically grown nano-bent nanostructure and method for making the same
US20080098805A1 (en) * 2004-10-06 2008-05-01 Sungho Jin Nanotube-Based Nanoprobe Structure and Method for Making the Same
US7658991B2 (en) * 2004-10-21 2010-02-09 University Of Georgia Research Foundation, Inc. Structures having aligned nanorods and methods of making
EP1750310A3 (en) * 2005-08-03 2009-07-15 Samsung Electro-Mechanics Co., Ltd. Omni-directional reflector and light emitting diode adopting the same
WO2007053242A2 (en) * 2005-09-19 2007-05-10 Wayne State University Transparent hydrophobic article having self-cleaning and liquid repellant features and method of fabricating same
CA2624778A1 (en) * 2005-12-29 2007-11-22 Nanosys, Inc. Methods for oriented growth of nanowires on patterned substrates
US20080176074A1 (en) * 2006-07-07 2008-07-24 Ilsoon Lee Asymmetric nanoparticles from polymer nanospheres
JP5303835B2 (ja) * 2006-12-27 2013-10-02 株式会社リコー 蒸着膜とこれを用いた光路偏向素子、空間光変調素子、及び投射型画像表示装置
US7864426B2 (en) * 2007-02-13 2011-01-04 Xradia, Inc. High aspect-ratio X-ray diffractive structure stabilization methods and systems
US8168251B2 (en) * 2008-10-10 2012-05-01 The Board Of Trustees Of The Leland Stanford Junior University Method for producing tapered metallic nanowire tips on atomic force microscope cantilevers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9253890B2 (en) 2013-08-16 2016-02-02 Industrial Technology Research Institute Patterned conductive film, method of fabricating the same, and application thereof

Also Published As

Publication number Publication date
JP2010043348A (ja) 2010-02-25
JP5621955B2 (ja) 2014-11-12
TW201007818A (en) 2010-02-16
US20100040859A1 (en) 2010-02-18
US20100261001A1 (en) 2010-10-14
US7998539B2 (en) 2011-08-16

Similar Documents

Publication Publication Date Title
TWI372418B (en) Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same
ZA201308527B (en) Forms of rifaximin and uses thereof
SG10201403327WA (en) Anti-vegf antibodies and their uses
EP2501763A4 (en) PROTECTIVE COATINGS AND METHODS OF MAKING AND USING THEM
GB0909183D0 (en) Coating method
EP2313721A4 (en) REFRIGERATOR AND METHOD FOR MANUFACTURING THE SAME
EP2625227A4 (en) Coating composition and method of making and using the same
GB0822558D0 (en) Pipe member and method of manufacturing the same
GB0914833D0 (en) Method of manufacturing revolving whetstone and revolving whetstone manufactured by the same
PT2302100T (pt) Substratos de autolimpeza e métodos para os produzir
GB2482823B (en) Coated spring and method of making the same
GB0813015D0 (en) Phosphoproteins and use of the same
IL226024A0 (en) A part coated with a rigid film and a method for its production
PL2432916T3 (pl) Powłoki Pt-Al-Hf/Zr i sposób nakładania
GB2461094B (en) Deposition of materials
GB2453210B (en) Biochip and method of fabrication
EP2270262A4 (en) MICROSTRUCTURE AND MANUFACTURING METHOD THEREFOR
GB0807660D0 (en) Improved deposition method and application
IL198369A0 (en) Solar element and method of manufacturing the same
IL199827A0 (en) Coatings and methods thereof
PL386680A1 (pl) Tetrafluoroborany 3-alkoksymetylo-1-butyloimidazoliowe oraz sposób wytwarzania tetrafluoroboranów 3-alkoksymetylo-1-butyloimidazoliowych
PL386682A1 (pl) Tetrafluoroborany 3-alkoksymetylo-1-decyloimidazoliowe oraz sposób wytwarzania tetrafluoroboranów 3-alkoksymetylo-1-decyloimidazoliowych
AP2675A (en) The distrubution of eletricity
GB0720304D0 (en) Computer-implemented methods
PL382869A1 (pl) Dicyjanoimidki 3-alkoksymetylo-1-metyloimidazoliowe oraz sposób wytwarzania dicyjanoimidków 3-alkoksymetylo-1-metyloimidazoliowych

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees