TWI371867B - Semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device

Info

Publication number: TWI371867B
Authority: TW; Taiwan
Prior art keywords: emitting device; semiconductor light; semiconductor; light; emitting
Prior art date: 2004-04-30

Application number

TW094111423A

Other languages

English (en)

Other versions

TW200536161A (en

Inventor

Koji Uematsu

Masaki Ueno

Ryu Hirota

Hideaki Nakahata

Manabu Okui

Original Assignee

Sumitomo Electric Industries

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2004-04-30

Filing date

2005-04-11

Publication date

2012-09-01

2005-04-11 Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries

2005-11-01 Publication of TW200536161A publication Critical patent/TW200536161A/zh

2012-09-01 Application granted granted Critical

2012-09-01 Publication of TWI371867B publication Critical patent/TWI371867B/zh

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N17/00—Diagnosis, testing or measuring for television systems or their details
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

Engineering & Computer Science (AREA)
Health & Medical Sciences (AREA)
Biomedical Technology (AREA)
General Health & Medical Sciences (AREA)
Multimedia (AREA)
Signal Processing (AREA)
Led Devices (AREA)

TW094111423A 2004-04-30 2005-04-11 Semiconductor light-emitting device TWI371867B (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2004136265		2004-04-30
JP2005025433A JP2005340765A (ja)	2004-04-30	2005-02-01	半導体発光素子

Publications (2)

Publication Number	Publication Date
TW200536161A TW200536161A (en)	2005-11-01
TWI371867B true TWI371867B (en)	2012-09-01

Family

ID=34935310

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW094111423A TWI371867B (en)	2004-04-30	2005-04-11	Semiconductor light-emitting device

Country Status (6)

Country	Link
US (1)	US7129525B2 (zh)
EP (1)	EP1592075A3 (zh)
JP (1)	JP2005340765A (zh)
KR (1)	KR101119579B1 (zh)
CA (1)	CA2504023A1 (zh)
TW (1)	TWI371867B (zh)

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JP2004296796A (ja) *	2003-03-27	2004-10-21	Shin Etsu Handotai Co Ltd	発光素子および発光素子の製造方法
US7821019B2 (en)	2004-10-04	2010-10-26	Svt Associates, Inc.	Triple heterostructure incorporating a strained zinc oxide layer for emitting light at high temperatures
JP4210665B2 (ja) *	2005-03-24	2009-01-21	ローム株式会社	酸化亜鉛系化合物半導体発光素子
JP4212105B2 (ja) *	2005-03-24	2009-01-21	ローム株式会社	酸化亜鉛系化合物半導体素子
JP2006324465A (ja) *	2005-05-19	2006-11-30	Matsushita Electric Ind Co Ltd	半導体装置及びその製造方法
TWI455181B (zh) *	2005-06-01	2014-10-01	美國加利福尼亞大學董事會	半極性（Ｇａ，Ａｌ，Ｉｎ，Ｂ）Ｎ薄膜、異質結構及裝置之生長及製造技術
JP4988179B2 (ja) *	2005-09-22	2012-08-01	ローム株式会社	酸化亜鉛系化合物半導体素子
US20070126021A1 (en) *	2005-12-06	2007-06-07	Yungryel Ryu	Metal oxide semiconductor film structures and methods
WO2007067166A1 (en) *	2005-12-06	2007-06-14	Moxtronics, Inc.	Metal oxide semiconductor devices and film structures and methods
JP2007180142A (ja) *	2005-12-27	2007-07-12	Toshiba Corp	窒化物系半導体素子及びその製造方法
JP4939844B2 (ja)	2006-06-08	2012-05-30	ローム株式会社	ＺｎＯ系半導体素子
US7343812B2 (en) *	2006-06-15	2008-03-18	Honeywell International Inc.	Method to reduce die edge shorting on pressure sensors using conductive elastomeric seals
JP2010512660A (ja) *	2006-12-11	2010-04-22	ザリージェンツオブザユニバーシティオブカリフォルニア	無極性および半極性の発光デバイス
JP5118392B2 (ja) *	2007-06-08	2013-01-16	ローム株式会社	半導体発光素子およびその製造方法
KR100885190B1 (ko) *	2007-06-29	2009-02-24	우리엘에스티 주식회사	발광소자와 그의 제조방법
KR100864609B1 (ko) *	2007-07-04	2008-10-22	우리엘에스티 주식회사	화합물 반도체를 이용한 발광소자
JP2009032966A (ja) *	2007-07-27	2009-02-12	Rohm Co Ltd	半導体発光素子
JP2009266963A (ja) *	2008-04-23	2009-11-12	Sumitomo Electric Ind Ltd	窒化物系発光素子、及び半導体発光素子を製造する方法
US8642369B2 (en) *	2009-03-03	2014-02-04	Zn Technology, Inc.	Vertically structured LED by integrating nitride semiconductors with Zn(Mg,Cd,Be)O(S,Se) and method for making same
JP5409210B2 (ja) *	2009-09-01	2014-02-05	学校法人金沢工業大学	半導体発光素子
CN103003961B (zh)	2010-04-30	2015-11-25	波士顿大学理事会	具有能带结构电位波动的高效紫外发光二极管
KR101440712B1 (ko) *	2010-05-21	2014-09-17	스미토모 긴조쿠 고잔 가부시키가이샤	산화아연 소결체 타블렛 및 그의 제조 방법
US8723189B1 (en)	2012-01-06	2014-05-13	Trustees Of Boston University	Ultraviolet light emitting diode structures and methods of manufacturing the same
JP6104682B2 (ja) *	2013-04-09	2017-03-29	シチズン電子株式会社	照明装置
KR102761525B1 (ko) *	2016-12-07	2025-02-04	서울바이오시스 주식회사	디스플레이 장치 및 그의 전극 연결 방법
KR102756013B1 (ko)	2018-06-07	2025-01-15	실라나 유브이 테크놀로지스 피티이 리미티드	반도체 레이어 형성을 위한 방법 및 재료 증착 시스템

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US6542526B1 (en) *	1996-10-30	2003-04-01	Hitachi, Ltd.	Optical information processor and semiconductor light emitting device suitable for the same
US6849472B2 (en) *	1997-09-30	2005-02-01	Lumileds Lighting U.S., Llc	Nitride semiconductor device with reduced polarization fields
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CA2343105C (en) *	1998-09-10	2004-09-28	Rohm Co., Ltd.	Semiconductor light-emitting device and method for manufacturing the same
JP3668031B2 (ja) *	1999-01-29	2005-07-06	三洋電機株式会社	窒化物系半導体発光素子の製造方法
JP4404995B2 (ja) *	1999-07-26	2010-01-27	独立行政法人産業技術総合研究所	Ａ面サファイア基板を用いたＺｎＯ系化合物半導体発光素子およびその製法
JP2002145700A (ja) *	2000-08-14	2002-05-22	Nippon Telegr & Teleph Corp <Ntt>	サファイア基板および半導体素子ならびに電子部品および結晶成長方法
JP4447755B2 (ja)	2000-08-28	2010-04-07	独立行政法人産業技術総合研究所	ＺｎＯ系酸化物半導体層の成長方法およびそれを用いた半導体発光素子の製法
US6858882B2 (en) *	2000-09-08	2005-02-22	Sharp Kabushiki Kaisha	Nitride semiconductor light-emitting device and optical device including the same
JP4187422B2 (ja) *	2001-03-14	2008-11-26	明彦吉川	半導体薄膜の形成方法およびその方法を用いて製造された半導体薄膜付き基板およびその半導体薄膜付き基板を用いた半導体デバイス。
JP4567910B2 (ja)	2001-05-01	2010-10-27	スタンレー電気株式会社	半導体結晶の成長方法
JP3696182B2 (ja) *	2001-06-06	2005-09-14	松下電器産業株式会社	半導体レーザ素子
JP2002374003A (ja) *	2001-06-14	2002-12-26	Ngk Insulators Ltd	半導体素子、及び半導体素子用基板
KR100679377B1 (ko) *	2001-10-26	2007-02-05	암모노 에스피. 제트오. 오.	질화물 벌크 단결정층을 사용한 발광 디바이스 구조
US6683327B2 (en) *	2001-11-13	2004-01-27	Lumileds Lighting U.S., Llc	Nucleation layer for improved light extraction from light emitting devices
JP2006306722A (ja) *	2004-03-17	2006-11-09	Sumitomo Electric Ind Ltd	ＧａＮ単結晶基板の製造方法及びＧａＮ単結晶基板

2005
- 2005-02-01 JP JP2005025433A patent/JP2005340765A/ja active Pending
- 2005-04-11 TW TW094111423A patent/TWI371867B/zh not_active IP Right Cessation
- 2005-04-13 CA CA002504023A patent/CA2504023A1/en not_active Abandoned
- 2005-04-18 EP EP05008413A patent/EP1592075A3/en not_active Withdrawn
- 2005-04-27 KR KR1020050035072A patent/KR101119579B1/ko not_active Expired - Fee Related
- 2005-04-28 US US10/908,116 patent/US7129525B2/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP1592075A2 (en)	2005-11-02
KR101119579B1 (ko)	2012-03-08
TW200536161A (en)	2005-11-01
JP2005340765A (ja)	2005-12-08
KR20060047539A (ko)	2006-05-18
US20050242357A1 (en)	2005-11-03
CA2504023A1 (en)	2005-10-30
EP1592075A3 (en)	2010-03-24
US7129525B2 (en)	2006-10-31

Publication	Publication Date	Title
TWI366860B (en)	2012-06-21	Semiconductor device
TWI371867B (en)	2012-09-01	Semiconductor light-emitting device
TWI368774B (en)	2012-07-21	Light-emitting device
TWI347421B (en)	2011-08-21	Lighting device
GB2453464B (en)	2011-08-31	Light-emitting semiconductor device
TWI320596B (en)	2010-02-11	Semiconductor device
TWI349378B (en)	2011-09-21	Semiconductor light generating device
TWI350964B (en)	2011-10-21	Semiconductor device
GB0722544D0 (en)	2007-12-27	Electroluminescent device
GB0413310D0 (en)	2004-07-14	Nanowire semiconductor device
AU300261S (en)	2004-11-23	Lighting device
TWI373098B (en)	2012-09-21	Semiconductor device
GB0325100D0 (en)	2003-12-03	A semiconductor light-emitting device
GB0422913D0 (en)	2004-11-17	Electroluminescent devices
EP1787242A4 (en)	2009-05-27	SEMICONDUCTOR DEVICE
EP1787338A4 (en)	2010-06-02	LIGHT EMITTING DEVICE
GB2426376B (en)	2008-12-03	Light-emitting device
SG128595A1 (en)	2007-01-30	Light-emitting device
GB0524013D0 (en)	2006-01-04	A semiconductor light-emitting device
EP1886261A4 (en)	2008-11-19	SEMICONDUCTOR COMPONENT
GB0414670D0 (en)	2004-08-04	Device illumination
EP1800446A4 (en)	2012-04-11	SEMICONDUCTOR DEVICE
GB0411572D0 (en)	2004-06-23	Light-emitting device
GB0508556D0 (en)	2005-06-01	A semiconductor light-emitting device
GB2432970B (en)	2008-03-05	Compound semiconductor luminescent device

Legal Events

Date	Code	Title	Description
2014-06-01	MM4A	Annulment or lapse of patent due to non-payment of fees