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TWI371791B - Die separation - Google Patents

Die separation

Info

Publication number
TWI371791B
TWI371791B TW096137791A TW96137791A TWI371791B TW I371791 B TWI371791 B TW I371791B TW 096137791 A TW096137791 A TW 096137791A TW 96137791 A TW96137791 A TW 96137791A TW I371791 B TWI371791 B TW I371791B
Authority
TW
Taiwan
Prior art keywords
die separation
die
separation
Prior art date
Application number
TW096137791A
Other languages
English (en)
Other versions
TW200834698A (en
Inventor
Chenfu Chu
Trung-Tri Doan
Chuong Anh Tran
Chaochen Cheng
Jiunnyi Chu
Wen Huang Liu
Hao Chun Cheng
Feng Hsu Fan
Jui Kang Yen
Original Assignee
Semi Photonics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semi Photonics Co Ltd filed Critical Semi Photonics Co Ltd
Publication of TW200834698A publication Critical patent/TW200834698A/zh
Application granted granted Critical
Publication of TWI371791B publication Critical patent/TWI371791B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/12—Copper or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/14—Titanium or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H10P54/00—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
TW096137791A 2006-10-11 2007-10-09 Die separation TWI371791B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/548,647 US7892891B2 (en) 2006-10-11 2006-10-11 Die separation

Publications (2)

Publication Number Publication Date
TW200834698A TW200834698A (en) 2008-08-16
TWI371791B true TWI371791B (en) 2012-09-01

Family

ID=39283207

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096137791A TWI371791B (en) 2006-10-11 2007-10-09 Die separation

Country Status (4)

Country Link
US (1) US7892891B2 (zh)
JP (1) JP5247710B2 (zh)
TW (1) TWI371791B (zh)
WO (1) WO2008045887A1 (zh)

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US20110253972A1 (en) * 2008-08-19 2011-10-20 Lattice Power (Jiangxi) Corporation LIGHT-EMITTING DEVICE BASED ON STRAIN-ADJUSTABLE InGaAIN FILM
US8642448B2 (en) 2010-06-22 2014-02-04 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
JP5852303B2 (ja) * 2010-06-30 2016-02-03 富士フイルム株式会社 金属膜表面の酸化防止方法及び酸化防止液
TWI438836B (zh) * 2010-11-05 2014-05-21 穩懋半導體股份有限公司 一種用於雷射切割半導體晶圓之製程方法
US9287175B2 (en) 2010-11-05 2016-03-15 Win Semiconductors Corp. Fabrication method for dicing of semiconductor wafers using laser cutting techniques
US8686461B2 (en) 2011-01-03 2014-04-01 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) die having stepped substrates and method of fabrication
US20120175652A1 (en) * 2011-01-06 2012-07-12 Electro Scientific Industries, Inc. Method and apparatus for improved singulation of light emitting devices
US9368404B2 (en) * 2012-09-28 2016-06-14 Plasma-Therm Llc Method for dicing a substrate with back metal
DE102012111358A1 (de) * 2012-11-23 2014-05-28 Osram Opto Semiconductors Gmbh Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips und Halbleiterchip
US9209082B2 (en) * 2014-01-03 2015-12-08 International Business Machines Corporation Methods of localized hardening of dicing channel by applying localized heat in wafer kerf
US9779932B2 (en) * 2015-12-11 2017-10-03 Suss Microtec Photonic Systems Inc. Sacrificial layer for post-laser debris removal systems
US11187789B2 (en) 2017-04-12 2021-11-30 Sense Photonics, Inc. Devices incorporating integrated detectors and ultra-small vertical cavity surface emitting laser emitters
KR102544296B1 (ko) * 2018-09-13 2023-06-16 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 표면발광레이저 소자 및 이를 구비한 표면발광레이저 장치
CN111370369A (zh) * 2020-03-20 2020-07-03 西安唐晶量子科技有限公司 一种金属衬底发光器件晶圆的分离方法
JP7481624B2 (ja) * 2020-06-30 2024-05-13 日亜化学工業株式会社 半導体装置の製造方法

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US4615774A (en) * 1985-01-31 1986-10-07 Omi International Corporation Gold alloy plating bath and process
JP3306598B2 (ja) * 1992-05-12 2002-07-24 株式会社日立製作所 半導体装置の製造方法及び洗浄装置
JPH0748684A (ja) * 1993-08-04 1995-02-21 Daido Kagaku Kogyo Kk 金属の切削加工時における金属新生面の酸化防止方法
JPH0941167A (ja) * 1995-08-02 1997-02-10 Fujikura Ltd 銅又は銅合金材の防錆処理方法
US6413839B1 (en) * 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
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DE10245631B4 (de) * 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
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TWI389334B (zh) * 2004-11-15 2013-03-11 維帝克股份有限公司 製造及分離半導體裝置之方法
US20060151801A1 (en) * 2005-01-11 2006-07-13 Doan Trung T Light emitting diode with thermo-electric cooler

Also Published As

Publication number Publication date
US7892891B2 (en) 2011-02-22
WO2008045887A1 (en) 2008-04-17
JP5247710B2 (ja) 2013-07-24
JP2010507234A (ja) 2010-03-04
TW200834698A (en) 2008-08-16
US20080194051A1 (en) 2008-08-14

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