TWI371107B - Power mosfet diode - Google Patents

Power mosfet diode

Info

Publication number: TWI371107B
Authority: TW; Taiwan
Prior art keywords: power mosfet; mosfet diode; diode; power; mosfet
Prior art date: 2007-03-22

Application number

TW096109849A

Other languages

Chinese (zh)

Other versions

TW200840058A (en

Inventor

Chao Cheng Lu

Original Assignee

Chao Cheng Lu

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2007-03-22

Filing date

2007-03-22

Publication date

2012-08-21

2007-03-22 Application filed by Chao Cheng Lu filed Critical Chao Cheng Lu

2007-03-22 Priority to TW096109849A priority Critical patent/TWI371107B/en

2008-10-01 Publication of TW200840058A publication Critical patent/TW200840058A/en

2012-08-21 Application granted granted Critical

2012-08-21 Publication of TWI371107B publication Critical patent/TWI371107B/en

Links

TW096109849A 2007-03-22 2007-03-22 Power mosfet diode TWI371107B (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
TW096109849A TWI371107B (en)	2007-03-22	2007-03-22	Power mosfet diode

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
TW096109849A TWI371107B (en)	2007-03-22	2007-03-22	Power mosfet diode

Publications (2)

Publication Number	Publication Date
TW200840058A TW200840058A (en)	2008-10-01
TWI371107B true TWI371107B (en)	2012-08-21

Family

ID=44821043

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW096109849A TWI371107B (en)	2007-03-22	2007-03-22	Power mosfet diode

Country Status (1)

Country	Link
TW (1)	TWI371107B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI473267B (en) *	2012-11-06	2015-02-11	Ind Tech Res Inst	Gold oxygen half field effect transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN103578992B (en) *	2012-07-25	2016-01-13	北大方正集团有限公司	A kind of integrated VDMOS chip and preparation method thereof

2007
- 2007-03-22 TW TW096109849A patent/TWI371107B/en not_active IP Right Cessation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI473267B (en) *	2012-11-06	2015-02-11	Ind Tech Res Inst	Gold oxygen half field effect transistor
US9018638B2 (en)	2012-11-06	2015-04-28	Industrial Technology Research Institute	MOSFET device

Also Published As

Publication number	Publication date
TW200840058A (en)	2008-10-01

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Legal Events

Date	Code	Title	Description
2016-05-21	MM4A	Annulment or lapse of patent due to non-payment of fees