TWI371069B - Bonding pad on ic substrate and method for making the same - Google Patents
Bonding pad on ic substrate and method for making the sameInfo
- Publication number
- TWI371069B TWI371069B TW095127947A TW95127947A TWI371069B TW I371069 B TWI371069 B TW I371069B TW 095127947 A TW095127947 A TW 095127947A TW 95127947 A TW95127947 A TW 95127947A TW I371069 B TWI371069 B TW I371069B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- making
- same
- bonding pad
- bonding
- Prior art date
Links
Classifications
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- H10W72/20—
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- H10W20/49—
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- H10W70/05—
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- H10W72/012—
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- H10W72/01255—
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- H10W72/019—
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- H10W72/227—
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- H10W72/247—
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- H10W72/252—
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- H10W72/29—
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- H10W72/922—
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- H10W72/923—
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- H10W72/926—
-
- H10W72/9415—
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- H10W72/944—
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- H10W72/952—
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US70393205P | 2005-07-29 | 2005-07-29 | |
| US70393305P | 2005-07-29 | 2005-07-29 | |
| US11/383,762 US8148822B2 (en) | 2005-07-29 | 2006-05-17 | Bonding pad on IC substrate and method for making the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200711016A TW200711016A (en) | 2007-03-16 |
| TWI371069B true TWI371069B (en) | 2012-08-21 |
Family
ID=46062844
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095127947A TWI371069B (en) | 2005-07-29 | 2006-07-31 | Bonding pad on ic substrate and method for making the same |
| TW095127948A TWI370496B (en) | 2005-07-29 | 2006-07-31 | Bonding pad on ic substrate and method for making the same |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095127948A TWI370496B (en) | 2005-07-29 | 2006-07-31 | Bonding pad on ic substrate and method for making the same |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8148822B2 (en) |
| CN (2) | CN101958289B (en) |
| SG (2) | SG129430A1 (en) |
| TW (2) | TWI371069B (en) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8802183B2 (en) * | 2005-04-28 | 2014-08-12 | Proteus Digital Health, Inc. | Communication system with enhanced partial power source and method of manufacturing same |
| US8399989B2 (en) * | 2005-07-29 | 2013-03-19 | Megica Corporation | Metal pad or metal bump over pad exposed by passivation layer |
| US8076779B2 (en) * | 2005-11-08 | 2011-12-13 | Lsi Corporation | Reduction of macro level stresses in copper/low-K wafers |
| US7449785B2 (en) * | 2006-02-06 | 2008-11-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Solder bump on a semiconductor substrate |
| JP2008198916A (en) * | 2007-02-15 | 2008-08-28 | Spansion Llc | Semiconductor device and manufacturing method thereof |
| KR100850212B1 (en) * | 2007-04-20 | 2008-08-04 | 삼성전자주식회사 | Manufacturing Method of Semiconductor Device to Obtain Uniform Electroless Plating Thickness |
| TWI348210B (en) * | 2007-08-17 | 2011-09-01 | Hannstar Display Corporatio | Semiconductor device |
| TWI447870B (en) * | 2008-02-20 | 2014-08-01 | 南茂科技股份有限公司 | Conductive structure for a semiconductor integrated circuit |
| US8921967B2 (en) * | 2008-09-29 | 2014-12-30 | Sol Chip Ltd. | Integrated circuit combination of a target integrated circuit and a plurality of photovoltaic cells connected thereto using the top conductive layer |
| US20100155949A1 (en) * | 2008-12-24 | 2010-06-24 | Texas Instruments Incorporated | Low cost process flow for fabrication of metal capping layer over copper interconnects |
| JP5693375B2 (en) * | 2010-05-28 | 2015-04-01 | シチズンホールディングス株式会社 | Semiconductor light emitting device |
| US10991669B2 (en) | 2012-07-31 | 2021-04-27 | Mediatek Inc. | Semiconductor package using flip-chip technology |
| TWI562295B (en) | 2012-07-31 | 2016-12-11 | Mediatek Inc | Semiconductor package and method for fabricating base for semiconductor package |
| US9177899B2 (en) | 2012-07-31 | 2015-11-03 | Mediatek Inc. | Semiconductor package and method for fabricating base for semiconductor package |
| US8912041B2 (en) * | 2013-03-08 | 2014-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming recess-free interconnect structure |
| US9723716B2 (en) * | 2013-09-27 | 2017-08-01 | Infineon Technologies Ag | Contact pad structure, an electronic component, and a method for manufacturing a contact pad structure |
| DE102013222816A1 (en) * | 2013-11-11 | 2015-05-13 | Robert Bosch Gmbh | Connection arrangement with a semiconductor device and an ultrasonically welded wire |
| US9281275B2 (en) * | 2014-05-15 | 2016-03-08 | Texas Instruments Incorporated | Bond pad having ruthenium directly on passivation sidewall |
| KR20160004090A (en) * | 2014-07-02 | 2016-01-12 | 삼성전기주식회사 | Coil unit for thin film inductor, manufacturing method of coil unit for thin film inductor, thin film inductor and manufacturing method of thin film inductor |
| US9425090B2 (en) * | 2014-09-19 | 2016-08-23 | Infineon Technologies Austria Ag | Method of electrodepositing gold on a copper seed layer to form a gold metallization structure |
| US9960135B2 (en) | 2015-03-23 | 2018-05-01 | Texas Instruments Incorporated | Metal bond pad with cobalt interconnect layer and solder thereon |
| US9691723B2 (en) * | 2015-10-30 | 2017-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Connector formation methods and packaged semiconductor devices |
| CN106910693B (en) * | 2015-12-23 | 2019-11-08 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor device and its manufacturing method and electronic device |
| ITUB20160027A1 (en) * | 2016-02-01 | 2017-08-01 | St Microelectronics Srl | PROCEDURE FOR PRODUCING SEMICONDUCTOR AND CORRESPONDING DEVICES |
| DE102016104788B4 (en) * | 2016-03-15 | 2019-06-19 | Infineon Technologies Ag | A semiconductor device having a metal adhesion and barrier structure and method of manufacturing a semiconductor device |
| ITUA20162740A1 (en) * | 2016-04-20 | 2017-10-20 | St Microelectronics Srl | SEMICONDUCTOR DEVICE AND CORRESPONDENT PROCEDURE |
| CN106206472B (en) * | 2016-08-19 | 2019-03-08 | 华为技术有限公司 | A kind of semiconductor package structure and its manufacturing method |
| US10658318B2 (en) | 2016-11-29 | 2020-05-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Film scheme for bumping |
| DE102017210585B3 (en) | 2017-06-23 | 2018-09-27 | Robert Bosch Gmbh | Bondpad layer system, gas sensor and method for producing a gas sensor |
| IT201700087174A1 (en) | 2017-07-28 | 2019-01-28 | St Microelectronics Srl | SEMICONDUCTOR AND CORRESPONDING DEVICE MANUFACTURING METHOD OF SEMICONDUCTOR DEVICES |
| IT201700087201A1 (en) | 2017-07-28 | 2019-01-28 | St Microelectronics Srl | SEMICONDUCTOR AND CORRESPONDING DEVICE MANUFACTURING METHOD OF SEMICONDUCTOR DEVICES |
| IT201700087318A1 (en) | 2017-07-28 | 2019-01-28 | St Microelectronics Srl | INTEGRATED ELECTRONIC DEVICE WITH REDISTRIBUTION AND HIGH RESISTANCE TO MECHANICAL STRESS AND ITS PREPARATION METHOD |
| US10424552B2 (en) | 2017-09-20 | 2019-09-24 | Texas Instruments Incorporated | Alloy diffusion barrier layer |
| US11469194B2 (en) | 2018-08-08 | 2022-10-11 | Stmicroelectronics S.R.L. | Method of manufacturing a redistribution layer, redistribution layer and integrated circuit including the redistribution layer |
| CN111105990B (en) * | 2018-10-29 | 2023-06-23 | 株洲中车时代半导体有限公司 | Thin film structure suitable for copper metallized semiconductor device and preparation method thereof |
| EP3671861A1 (en) * | 2018-12-17 | 2020-06-24 | Nexperia B.V. | Semiconductor device and electrical contact |
| US11244915B2 (en) * | 2019-10-31 | 2022-02-08 | Globalfoundries Singapore Pte. Ltd. | Bond pads of semiconductor devices |
| TWI780500B (en) * | 2020-10-12 | 2022-10-11 | 龍華科技大學 | Method of induction heating applied to redistribution line |
| CN112420534B (en) | 2020-11-27 | 2021-11-23 | 上海易卜半导体有限公司 | Method for forming semiconductor package and semiconductor package |
| US12293986B2 (en) | 2020-12-04 | 2025-05-06 | Yibu Semiconductor Co., Ltd. | Method for forming chip packages and a chip package |
| CN112687619A (en) * | 2020-12-25 | 2021-04-20 | 上海易卜半导体有限公司 | Method for forming semiconductor package and semiconductor package |
| CN113192822A (en) * | 2021-04-26 | 2021-07-30 | 中国振华集团永光电子有限公司(国营第八七三厂) | Wafer electroplating method and wafer electroplating clamp |
| WO2022252020A1 (en) * | 2021-05-31 | 2022-12-08 | 重庆康佳光电技术研究院有限公司 | Display backplane assembly, led display module and device, and related method |
| CN114340210B (en) * | 2022-03-17 | 2022-05-20 | 四川英创力电子科技股份有限公司 | Manufacturing equipment and manufacturing method of printed circuit board with embedded gold leads |
| US20230317577A1 (en) * | 2022-03-31 | 2023-10-05 | Taiwan Semiconductor Manufacturing Company Limited | Fine pitch chip interconnect structure for bump bridge and high temperature storage improvement and methods for forming the same |
| JP2024108015A (en) * | 2023-01-30 | 2024-08-09 | イビデン株式会社 | Printed Wiring Boards |
| US20250183174A1 (en) * | 2023-12-01 | 2025-06-05 | Stmicroelectronics International N.V. | Electronic device having a brasable metal pad cover and associated method |
| CN121218709A (en) * | 2025-11-26 | 2025-12-26 | 山西创芯光电科技有限公司 | Anti-interfacial diffusion flip-soldering structure and method for gallium antimonide-based infrared detectors |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5134460A (en) * | 1986-08-11 | 1992-07-28 | International Business Machines Corporation | Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding |
| US5795833A (en) * | 1996-08-01 | 1998-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd | Method for fabricating passivation layers over metal lines |
| US6197688B1 (en) * | 1998-02-12 | 2001-03-06 | Motorola Inc. | Interconnect structure in a semiconductor device and method of formation |
| US8021976B2 (en) * | 2002-10-15 | 2011-09-20 | Megica Corporation | Method of wire bonding over active area of a semiconductor circuit |
| US8178435B2 (en) * | 1998-12-21 | 2012-05-15 | Megica Corporation | High performance system-on-chip inductor using post passivation process |
| TW426980B (en) * | 1999-01-23 | 2001-03-21 | Lucent Technologies Inc | Wire bonding to copper |
| TW444288B (en) | 1999-01-27 | 2001-07-01 | Shinko Electric Ind Co | Semiconductor wafer and semiconductor device provided with columnar electrodes and methods of producing the wafer and device |
| US6544880B1 (en) * | 1999-06-14 | 2003-04-08 | Micron Technology, Inc. | Method of improving copper interconnects of semiconductor devices for bonding |
| US6423625B1 (en) * | 1999-08-30 | 2002-07-23 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of improving the bondability between Au wires and Cu bonding pads |
| JP3859403B2 (en) | 1999-09-22 | 2006-12-20 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
| CN1314225A (en) | 2000-02-18 | 2001-09-26 | 德克萨斯仪器股份有限公司 | Structure and method for copper plating layer integrated circuit welding spot |
| US6806578B2 (en) * | 2000-03-16 | 2004-10-19 | International Business Machines Corporation | Copper pad structure |
| US7061111B2 (en) * | 2000-04-11 | 2006-06-13 | Micron Technology, Inc. | Interconnect structure for use in an integrated circuit |
| TW469591B (en) | 2000-12-08 | 2001-12-21 | Taiwan Semiconductor Mfg | Fabrication method of dual damascene |
| TW531873B (en) | 2001-06-12 | 2003-05-11 | Advanced Interconnect Tech Ltd | Barrier cap for under bump metal |
| TW586208B (en) | 2002-02-26 | 2004-05-01 | Advanced Semiconductor Eng | Wafer-level packaging structure |
| TWI307152B (en) * | 2002-04-03 | 2009-03-01 | Advanced Semiconductor Eng | Under bump metallurgy |
| US20040007779A1 (en) * | 2002-07-15 | 2004-01-15 | Diane Arbuthnot | Wafer-level method for fine-pitch, high aspect ratio chip interconnect |
| KR100587061B1 (en) | 2003-05-27 | 2006-06-07 | 주식회사 하이닉스반도체 | Semiconductor package |
| TWI312181B (en) | 2003-05-27 | 2009-07-11 | Megica Corporatio | High performance system-on-chip passive device using post passivation process |
| TWI229930B (en) | 2003-06-09 | 2005-03-21 | Advanced Semiconductor Eng | Chip structure |
| US7470997B2 (en) * | 2003-07-23 | 2008-12-30 | Megica Corporation | Wirebond pad for semiconductor chip or wafer |
| TWI225288B (en) | 2003-09-03 | 2004-12-11 | Megic Corp | Chip structure |
| US20050098605A1 (en) * | 2003-11-06 | 2005-05-12 | International Business Machines Corporation | Apparatus and method for low pressure wirebond |
| US20050167837A1 (en) * | 2004-01-21 | 2005-08-04 | International Business Machines Corporation | Device with area array pads for test probing |
| TWI236722B (en) | 2004-07-09 | 2005-07-21 | Megic Corp | Chip structure |
| US7741714B2 (en) * | 2004-11-02 | 2010-06-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bond pad structure with stress-buffering layer capping interconnection metal layer |
| US7538434B2 (en) * | 2005-03-08 | 2009-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Copper interconnection with conductive polymer layer and method of forming the same |
-
2006
- 2006-05-17 US US11/383,762 patent/US8148822B2/en active Active
- 2006-07-28 SG SG200605100A patent/SG129430A1/en unknown
- 2006-07-28 SG SG201004591-2A patent/SG162832A1/en unknown
- 2006-07-31 TW TW095127947A patent/TWI371069B/en active
- 2006-07-31 CN CN2010102656676A patent/CN101958289B/en active Active
- 2006-07-31 TW TW095127948A patent/TWI370496B/en active
- 2006-07-31 CN CN2010102656430A patent/CN101958288B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US8148822B2 (en) | 2012-04-03 |
| CN101958289A (en) | 2011-01-26 |
| TW200711016A (en) | 2007-03-16 |
| SG129430A1 (en) | 2007-02-26 |
| TWI370496B (en) | 2012-08-11 |
| SG162832A1 (en) | 2010-07-29 |
| TW200711017A (en) | 2007-03-16 |
| US20070023919A1 (en) | 2007-02-01 |
| CN101958288A (en) | 2011-01-26 |
| CN101958288B (en) | 2012-05-23 |
| CN101958289B (en) | 2012-02-01 |
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