TWI371055B - Ion implanter - Google Patents

Ion implanter

Info

Publication number: TWI371055B
Authority: TW; Taiwan
Prior art keywords: ion implanter; implanter; ion
Prior art date: 2007-03-29

Application number

TW097111420A

Other languages

English (en)

Other versions

TW200903555A (en

Inventor

Yasuyuki Tsuji

Original Assignee

Mitsui Shipbuilding Eng

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2007-03-29

Filing date

2008-03-28

Publication date

2012-08-21

2008-03-28 Application filed by Mitsui Shipbuilding Eng filed Critical Mitsui Shipbuilding Eng

2009-01-16 Publication of TW200903555A publication Critical patent/TW200903555A/zh

2012-08-21 Application granted granted Critical

2012-08-21 Publication of TWI371055B publication Critical patent/TWI371055B/zh

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
- H10P30/20—
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
- H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
- H01J2237/24542—Beam profile

Landscapes

Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Electron Sources, Ion Sources (AREA)
Physical Vapour Deposition (AREA)

TW097111420A 2007-03-29 2008-03-28 Ion implanter TWI371055B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2007086525A JP4288288B2 (ja)	2007-03-29	2007-03-29	イオン注入装置

Publications (2)

Publication Number	Publication Date
TW200903555A TW200903555A (en)	2009-01-16
TWI371055B true TWI371055B (en)	2012-08-21

Family

ID=39830906

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW097111420A TWI371055B (en)	2007-03-29	2008-03-28	Ion implanter

Country Status (5)

Country	Link
JP (1)	JP4288288B2 (zh)
KR (1)	KR101071581B1 (zh)
CN (1)	CN101606217B (zh)
TW (1)	TWI371055B (zh)
WO (1)	WO2008123421A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP5226577B2 (ja) *	2009-03-27	2013-07-03	三井造船株式会社	イオン注入装置及びイオンビームの調整方法
JP5316899B2 (ja)	2010-04-13	2013-10-16	日新イオン機器株式会社	イオン注入方法およびイオン注入装置
JP5585788B2 (ja) *	2011-05-27	2014-09-10	日新イオン機器株式会社	イオン注入装置
CN102800550B (zh) *	2011-05-27	2015-08-26	日新离子机器株式会社	离子注入装置
JP5648919B2 (ja) *	2011-08-17	2015-01-07	日新イオン機器株式会社	イオン注入装置
JP5941377B2 (ja) *	2012-08-31	2016-06-29	住友重機械イオンテクノロジー株式会社	イオン注入方法およびイオン注入装置
JP2015050382A (ja) *	2013-09-03	2015-03-16	富士通セミコンダクター株式会社	半導体装置の製造方法、及び半導体製造装置
TWI501286B (zh) *	2014-06-27	2015-09-21	漢辰科技股份有限公司	離子佈植機
JP7132828B2 (ja) *	2018-11-13	2022-09-07	住友重機械イオンテクノロジー株式会社	イオン注入装置およびビームパーク装置
CN111261477B (zh) *	2018-12-03	2022-08-02	北京中科信电子装备有限公司	一种双出口平行透镜
CN110643954B (zh) *	2019-10-21	2024-03-01	上海新柯隆真空设备制造有限公司	镀膜设备、离子源、以及栅极结构
CN114724910A (zh) *	2022-06-10	2022-07-08	浙江中科尚弘离子装备工程有限公司	一种带状离子束注入系统
CN115637414A (zh) *	2022-10-31	2023-01-24	江苏省特种设备安全监督检验研究院	一种超声辅助离子注入的装置及加工方法
CN118748143A (zh) *	2024-06-28	2024-10-08	上海邦芯半导体科技有限公司	离子束调整装置及其离子束调整方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7078714B2 (en) *	2004-05-14	2006-07-18	Nissin Ion Equipment Co., Ltd.	Ion implanting apparatus
JP4882456B2 (ja) *	2006-03-31	2012-02-22	株式会社Ｉｈｉ	イオン注入装置

2007
- 2007-03-29 JP JP2007086525A patent/JP4288288B2/ja active Active
2008
- 2008-03-28 CN CN2008800043315A patent/CN101606217B/zh active Active
- 2008-03-28 WO PCT/JP2008/056106 patent/WO2008123421A1/ja not_active Ceased
- 2008-03-28 TW TW097111420A patent/TWI371055B/zh active
- 2008-03-28 KR KR1020097016138A patent/KR101071581B1/ko active Active

Also Published As

Publication number	Publication date
CN101606217B (zh)	2011-11-02
TW200903555A (en)	2009-01-16
KR20090108059A (ko)	2009-10-14
CN101606217A (zh)	2009-12-16
JP2008243765A (ja)	2008-10-09
JP4288288B2 (ja)	2009-07-01
KR101071581B1 (ko)	2011-10-10
WO2008123421A1 (ja)	2008-10-16

Publication	Publication Date	Title
TWI371055B (en)	2012-08-21	Ion implanter
GB2476191B (en)	2011-09-21	Ion trap
GB2466522B (en)	2011-02-09	Linear ion trap
GB2456284B (en)	2012-10-17	Ion transfer arrangement
TWI366857B (en)	2012-06-21	Ion implant apparatus
GB2455171B (en)	2010-08-11	Ion guiding device
GB2491457B (en)	2013-04-17	Ion trap for cooling ions
GB0704547D0 (en)	2007-04-18	Ion mobility spectrometers
EP2097354A4 (en)	2011-04-20	INCREASE IN IONS
GB2464176B (en)	2013-04-03	Ion mobility spectrometer
GB2456401B (en)	2011-06-08	Ion handling devices
GB2457783B (en)	2012-08-01	Ion mobility spectrometer
IL187044A0 (en)	2008-02-09	Fast secure boot implementation
GB2438893B (en)	2010-10-27	Ion beams in an ion implanter
EP2044607A4 (en)	2011-11-30	IONIC ELECTROPULVERIZATION SOURCE
EP2023695A4 (en)	2011-12-21	ION GENERATOR
EP1901662A4 (en)	2009-11-11	IMPLANTER
GB0713643D0 (en)	2007-08-22	Ion selector
GB0614501D0 (en)	2006-08-30	Ion sources
GB0600362D0 (en)	2006-02-15	Ion selection
GB0611935D0 (en)	2006-07-26	Ion selection
GB0814335D0 (en)	2008-09-10	Ion channel
GB2470291B (en)	2011-12-14	Ion source
GB0719849D0 (en)	2007-11-21	Ion mobility spectrometry
AU2008904594A0 (en)	2008-09-25	Ion switch for nueral stimulation