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TWI370954B - - Google Patents

Info

Publication number
TWI370954B
TWI370954B TW097119773A TW97119773A TWI370954B TW I370954 B TWI370954 B TW I370954B TW 097119773 A TW097119773 A TW 097119773A TW 97119773 A TW97119773 A TW 97119773A TW I370954 B TWI370954 B TW I370954B
Authority
TW
Taiwan
Application number
TW097119773A
Other languages
Chinese (zh)
Other versions
TW200915006A (en
Inventor
Atsushi Sawano
Jun Koshiyama
Takako Hirosaki
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200915006A publication Critical patent/TW200915006A/en
Application granted granted Critical
Publication of TWI370954B publication Critical patent/TWI370954B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H10P76/00—
    • H10P76/20—
    • H10P76/2043—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
TW097119773A 2007-06-01 2008-05-28 Composition for antireflection film formation and method for resist pattern formation using the composition TW200915006A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007147411A JP4928356B2 (en) 2007-06-01 2007-06-01 Antireflection film forming composition and resist pattern forming method using the same

Publications (2)

Publication Number Publication Date
TW200915006A TW200915006A (en) 2009-04-01
TWI370954B true TWI370954B (en) 2012-08-21

Family

ID=40074891

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097119773A TW200915006A (en) 2007-06-01 2008-05-28 Composition for antireflection film formation and method for resist pattern formation using the composition

Country Status (5)

Country Link
JP (1) JP4928356B2 (en)
KR (1) KR101115119B1 (en)
CN (1) CN101681112B (en)
TW (1) TW200915006A (en)
WO (1) WO2008146626A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10268117B2 (en) 2014-05-21 2019-04-23 Az Electronic Materials (Luxembourg) S.A.R.L. Top-layer membrane formation composition and method for forming resist pattern using same
JP6754424B2 (en) * 2016-03-30 2020-09-09 富士フイルム株式会社 Protective film forming composition, method for producing protective film forming composition, pattern forming method, and method for producing electronic device
TWI755723B (en) * 2020-05-05 2022-02-21 力晶積成電子製造股份有限公司 Patterning method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002012574A (en) * 2000-06-29 2002-01-15 Nippon Shokubai Co Ltd Method for extracting aromatic fluorine compound
JP4196822B2 (en) * 2003-12-22 2008-12-17 パナソニック株式会社 Water-soluble material and pattern forming method using the same
JP2007108463A (en) * 2005-10-14 2007-04-26 Tokyo Ohka Kogyo Co Ltd Material for forming upper layer film of photoresist
KR100962951B1 (en) * 2005-10-27 2010-06-10 제이에스알 가부시끼가이샤 Upper layer formation composition and photoresist pattern formation method

Also Published As

Publication number Publication date
KR20100009580A (en) 2010-01-27
KR101115119B1 (en) 2012-03-13
WO2008146626A1 (en) 2008-12-04
CN101681112A (en) 2010-03-24
TW200915006A (en) 2009-04-01
JP2008299223A (en) 2008-12-11
CN101681112B (en) 2012-05-30
JP4928356B2 (en) 2012-05-09

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