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TWI370952B - Positive resist composition for thick-film resist film forming, thick-film resist laminated product, and method for forming resist pattern - Google Patents

Positive resist composition for thick-film resist film forming, thick-film resist laminated product, and method for forming resist pattern

Info

Publication number
TWI370952B
TWI370952B TW096103368A TW96103368A TWI370952B TW I370952 B TWI370952 B TW I370952B TW 096103368 A TW096103368 A TW 096103368A TW 96103368 A TW96103368 A TW 96103368A TW I370952 B TWI370952 B TW I370952B
Authority
TW
Taiwan
Prior art keywords
resist
film
thick
forming
laminated product
Prior art date
Application number
TW096103368A
Other languages
English (en)
Other versions
TW200745757A (en
Inventor
Hiroshi Shimbori
Masahiro Masujima
Toshihiro Yamaguchi
Sachiko Yoshizawa
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200745757A publication Critical patent/TW200745757A/zh
Application granted granted Critical
Publication of TWI370952B publication Critical patent/TWI370952B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/122Sulfur compound containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/126Halogen compound containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/26Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264Up to 3 mils
    • Y10T428/2651 mil or less

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW096103368A 2006-02-02 2007-01-30 Positive resist composition for thick-film resist film forming, thick-film resist laminated product, and method for forming resist pattern TWI370952B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006025770A JP4937594B2 (ja) 2006-02-02 2006-02-02 厚膜レジスト膜形成用のポジ型レジスト組成物、厚膜レジスト積層体およびレジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW200745757A TW200745757A (en) 2007-12-16
TWI370952B true TWI370952B (en) 2012-08-21

Family

ID=38327455

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096103368A TWI370952B (en) 2006-02-02 2007-01-30 Positive resist composition for thick-film resist film forming, thick-film resist laminated product, and method for forming resist pattern

Country Status (5)

Country Link
US (1) US8133653B2 (zh)
JP (1) JP4937594B2 (zh)
KR (1) KR101039545B1 (zh)
TW (1) TWI370952B (zh)
WO (1) WO2007088884A1 (zh)

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JP5028242B2 (ja) * 2007-12-13 2012-09-19 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP5266842B2 (ja) * 2008-03-31 2013-08-21 大日本印刷株式会社 ポジ型レジスト組成物、及び当該ポジ型レジスト組成物を用いたパターン形成方法
JP5451569B2 (ja) * 2009-10-16 2014-03-26 富士フイルム株式会社 感光性樹脂組成物、硬化膜、硬化膜の形成方法、有機el表示装置、及び、液晶表示装置
JP6238635B2 (ja) * 2013-08-09 2017-11-29 東京応化工業株式会社 化学増幅型感光性樹脂組成物及びそれを用いたレジストパターンの製造方法
KR102202975B1 (ko) * 2014-07-09 2021-01-14 동우 화인켐 주식회사 후막 패턴 구조 및 그의 형성 방법
JP6811004B2 (ja) * 2015-01-21 2021-01-13 東京応化工業株式会社 マイクロレンズパターン製造用ポジ型感光性樹脂組成物
JP6655628B2 (ja) 2015-11-05 2020-02-26 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、及び、電子デバイスの製造方法
JP6894749B2 (ja) * 2016-07-20 2021-06-30 東京応化工業株式会社 マイクロレンズパターン製造用ポジ型感光性樹脂組成物及びその用途
TWI743132B (zh) * 2016-07-20 2021-10-21 日商東京應化工業股份有限公司 微透鏡圖型製造用正型感光性樹脂組成物及其之用途
JPWO2019009143A1 (ja) * 2017-07-04 2020-04-16 富士フイルム株式会社 赤外線受光素子の製造方法、光センサの製造方法、積層体、レジスト組成物およびキット
KR102134381B1 (ko) * 2017-07-31 2020-07-15 주식회사 엘지화학 포지티브형 포토레지스트 조성물, 이로부터 제조되는 패턴, 및 패턴 제조방법
KR102400739B1 (ko) 2017-08-31 2022-05-23 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 고체 촬상 소자의 제조 방법
KR102513125B1 (ko) 2017-09-13 2023-03-23 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법
JP7080049B2 (ja) * 2017-12-28 2022-06-03 東京応化工業株式会社 レジストパターン形成方法
WO2020049859A1 (ja) 2018-09-05 2020-03-12 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法
JP7414457B2 (ja) 2018-11-20 2024-01-16 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
KR102738548B1 (ko) 2020-02-20 2024-12-04 도오꾜오까고오교 가부시끼가이샤 후막 레지스트막 형성용 레지스트 조성물, 후막 레지스트 적층체 및 레지스트 패턴 형성 방법
JP2024520263A (ja) 2021-05-28 2024-05-24 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 厚膜レジスト組成物およびそれを用いたレジスト膜の製造方法
TW202343138A (zh) 2022-03-01 2023-11-01 德商默克專利有限公司 離子植入厚膜阻劑組成物、使用其之加工基板之製造方法、及使用其之裝置之製造方法
WO2024104940A1 (en) 2022-11-15 2024-05-23 Merck Patent Gmbh Thick film chemically amplified positive type resist composition and method for manufacturing resist film using the same

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Also Published As

Publication number Publication date
WO2007088884A1 (ja) 2007-08-09
JP4937594B2 (ja) 2012-05-23
TW200745757A (en) 2007-12-16
KR20080081370A (ko) 2008-09-09
KR101039545B1 (ko) 2011-06-09
US20090023102A1 (en) 2009-01-22
US8133653B2 (en) 2012-03-13
JP2007206425A (ja) 2007-08-16

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