TWI370952B - Positive resist composition for thick-film resist film forming, thick-film resist laminated product, and method for forming resist pattern - Google Patents
Positive resist composition for thick-film resist film forming, thick-film resist laminated product, and method for forming resist patternInfo
- Publication number
- TWI370952B TWI370952B TW096103368A TW96103368A TWI370952B TW I370952 B TWI370952 B TW I370952B TW 096103368 A TW096103368 A TW 096103368A TW 96103368 A TW96103368 A TW 96103368A TW I370952 B TWI370952 B TW I370952B
- Authority
- TW
- Taiwan
- Prior art keywords
- resist
- film
- thick
- forming
- laminated product
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/126—Halogen compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006025770A JP4937594B2 (ja) | 2006-02-02 | 2006-02-02 | 厚膜レジスト膜形成用のポジ型レジスト組成物、厚膜レジスト積層体およびレジストパターン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200745757A TW200745757A (en) | 2007-12-16 |
| TWI370952B true TWI370952B (en) | 2012-08-21 |
Family
ID=38327455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096103368A TWI370952B (en) | 2006-02-02 | 2007-01-30 | Positive resist composition for thick-film resist film forming, thick-film resist laminated product, and method for forming resist pattern |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8133653B2 (zh) |
| JP (1) | JP4937594B2 (zh) |
| KR (1) | KR101039545B1 (zh) |
| TW (1) | TWI370952B (zh) |
| WO (1) | WO2007088884A1 (zh) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5028242B2 (ja) * | 2007-12-13 | 2012-09-19 | 東京応化工業株式会社 | レジスト組成物およびレジストパターン形成方法 |
| JP5266842B2 (ja) * | 2008-03-31 | 2013-08-21 | 大日本印刷株式会社 | ポジ型レジスト組成物、及び当該ポジ型レジスト組成物を用いたパターン形成方法 |
| JP5451569B2 (ja) * | 2009-10-16 | 2014-03-26 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化膜、硬化膜の形成方法、有機el表示装置、及び、液晶表示装置 |
| JP6238635B2 (ja) * | 2013-08-09 | 2017-11-29 | 東京応化工業株式会社 | 化学増幅型感光性樹脂組成物及びそれを用いたレジストパターンの製造方法 |
| KR102202975B1 (ko) * | 2014-07-09 | 2021-01-14 | 동우 화인켐 주식회사 | 후막 패턴 구조 및 그의 형성 방법 |
| JP6811004B2 (ja) * | 2015-01-21 | 2021-01-13 | 東京応化工業株式会社 | マイクロレンズパターン製造用ポジ型感光性樹脂組成物 |
| JP6655628B2 (ja) | 2015-11-05 | 2020-02-26 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、及び、電子デバイスの製造方法 |
| JP6894749B2 (ja) * | 2016-07-20 | 2021-06-30 | 東京応化工業株式会社 | マイクロレンズパターン製造用ポジ型感光性樹脂組成物及びその用途 |
| TWI743132B (zh) * | 2016-07-20 | 2021-10-21 | 日商東京應化工業股份有限公司 | 微透鏡圖型製造用正型感光性樹脂組成物及其之用途 |
| JPWO2019009143A1 (ja) * | 2017-07-04 | 2020-04-16 | 富士フイルム株式会社 | 赤外線受光素子の製造方法、光センサの製造方法、積層体、レジスト組成物およびキット |
| KR102134381B1 (ko) * | 2017-07-31 | 2020-07-15 | 주식회사 엘지화학 | 포지티브형 포토레지스트 조성물, 이로부터 제조되는 패턴, 및 패턴 제조방법 |
| KR102400739B1 (ko) | 2017-08-31 | 2022-05-23 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 고체 촬상 소자의 제조 방법 |
| KR102513125B1 (ko) | 2017-09-13 | 2023-03-23 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법 |
| JP7080049B2 (ja) * | 2017-12-28 | 2022-06-03 | 東京応化工業株式会社 | レジストパターン形成方法 |
| WO2020049859A1 (ja) | 2018-09-05 | 2020-03-12 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
| JP7414457B2 (ja) | 2018-11-20 | 2024-01-16 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
| KR102738548B1 (ko) | 2020-02-20 | 2024-12-04 | 도오꾜오까고오교 가부시끼가이샤 | 후막 레지스트막 형성용 레지스트 조성물, 후막 레지스트 적층체 및 레지스트 패턴 형성 방법 |
| JP2024520263A (ja) | 2021-05-28 | 2024-05-24 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 厚膜レジスト組成物およびそれを用いたレジスト膜の製造方法 |
| TW202343138A (zh) | 2022-03-01 | 2023-11-01 | 德商默克專利有限公司 | 離子植入厚膜阻劑組成物、使用其之加工基板之製造方法、及使用其之裝置之製造方法 |
| WO2024104940A1 (en) | 2022-11-15 | 2024-05-23 | Merck Patent Gmbh | Thick film chemically amplified positive type resist composition and method for manufacturing resist film using the same |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5258257A (en) * | 1991-09-23 | 1993-11-02 | Shipley Company Inc. | Radiation sensitive compositions comprising polymer having acid labile groups |
| JP3206989B2 (ja) | 1992-11-13 | 2001-09-10 | 富士写真フイルム株式会社 | ポジ型感光性材料 |
| JPH06230574A (ja) | 1993-02-05 | 1994-08-19 | Fuji Photo Film Co Ltd | ポジ型感光性組成物 |
| JP3798458B2 (ja) | 1996-02-02 | 2006-07-19 | 東京応化工業株式会社 | オキシムスルホネート化合物及びレジスト用酸発生剤 |
| JP3198915B2 (ja) * | 1996-04-02 | 2001-08-13 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
| JP3980124B2 (ja) | 1997-07-24 | 2007-09-26 | 東京応化工業株式会社 | 新規ビススルホニルジアゾメタン |
| JP3854689B2 (ja) | 1997-07-24 | 2006-12-06 | 東京応化工業株式会社 | 新規な光酸発生剤 |
| JP3865473B2 (ja) | 1997-07-24 | 2007-01-10 | 東京応化工業株式会社 | 新規なジアゾメタン化合物 |
| US5945517A (en) * | 1996-07-24 | 1999-08-31 | Tokyo Ohka Kogyo Co., Ltd. | Chemical-sensitization photoresist composition |
| JP4043078B2 (ja) | 1997-08-27 | 2008-02-06 | Jsr株式会社 | 感放射線性樹脂組成物 |
| JP3991459B2 (ja) * | 1997-09-02 | 2007-10-17 | Jsr株式会社 | 感放射線性樹脂組成物 |
| US6120972A (en) * | 1997-09-02 | 2000-09-19 | Jsr Corporation | Radiation-sensitive resin composition |
| JP3761322B2 (ja) * | 1998-04-23 | 2006-03-29 | 東京応化工業株式会社 | 化学増幅型ポジ型ホトレジスト |
| US6153733A (en) * | 1998-05-18 | 2000-11-28 | Tokyo Ohka Kogyo Co., Ltd. | (Disulfonyl diazomethane compounds) |
| JP3935267B2 (ja) | 1998-05-18 | 2007-06-20 | 東京応化工業株式会社 | 新規なレジスト用酸発生剤 |
| TWI250379B (en) * | 1998-08-07 | 2006-03-01 | Az Electronic Materials Japan | Chemical amplified radiation-sensitive composition which contains onium salt and generator |
| JP2001166478A (ja) * | 1999-12-03 | 2001-06-22 | Jsr Corp | 感放射線性樹脂組成物 |
| JP3712047B2 (ja) * | 2000-08-14 | 2005-11-02 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP2002110536A (ja) | 2000-10-05 | 2002-04-12 | Tdk Corp | レジストパターン、レジストパターンの作製方法、薄膜のパターニング方法、及びマイクロデバイスの製造方法 |
| JP3710717B2 (ja) | 2001-03-06 | 2005-10-26 | 東京応化工業株式会社 | 厚膜用ポジ型ホトレジスト組成物、ホトレジスト膜およびこれを用いたバンプ形成方法 |
| JP2002341538A (ja) | 2001-05-11 | 2002-11-27 | Fuji Photo Film Co Ltd | 電子線またはx線用ポジ型レジスト組成物 |
| JP4057807B2 (ja) * | 2001-12-03 | 2008-03-05 | 東京応化工業株式会社 | 微細レジストパターン形成方法 |
| BRPI0407605A (pt) | 2003-02-19 | 2006-02-14 | Ciba Sc Holding Ag | derivados de oxima halogenados e o uso dos mesmos como ácidos latentes |
| JP4393861B2 (ja) * | 2003-03-14 | 2010-01-06 | 東京応化工業株式会社 | 磁性膜のパターン形成方法 |
| JP4131864B2 (ja) * | 2003-11-25 | 2008-08-13 | 東京応化工業株式会社 | 化学増幅型ポジ型感光性熱硬化性樹脂組成物、硬化物の形成方法、及び機能素子の製造方法 |
| JP2006003861A (ja) * | 2004-05-19 | 2006-01-05 | Mitsui Chemicals Inc | ポジ型感光性レジスト組成物およびその製造方法 |
| JP4198648B2 (ja) * | 2004-07-01 | 2008-12-17 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターン形成方法 |
| JP4545500B2 (ja) * | 2004-07-01 | 2010-09-15 | 東京応化工業株式会社 | 化学増幅型レジスト組成物およびレジストパターン形成方法 |
| EP1720072B1 (en) * | 2005-05-01 | 2019-06-05 | Rohm and Haas Electronic Materials, L.L.C. | Compositons and processes for immersion lithography |
| US7255970B2 (en) * | 2005-07-12 | 2007-08-14 | Az Electronic Materials Usa Corp. | Photoresist composition for imaging thick films |
-
2006
- 2006-02-02 JP JP2006025770A patent/JP4937594B2/ja not_active Expired - Fee Related
-
2007
- 2007-01-30 TW TW096103368A patent/TWI370952B/zh active
- 2007-01-31 KR KR1020087019840A patent/KR101039545B1/ko active Active
- 2007-01-31 WO PCT/JP2007/051589 patent/WO2007088884A1/ja not_active Ceased
- 2007-01-31 US US12/162,775 patent/US8133653B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007088884A1 (ja) | 2007-08-09 |
| JP4937594B2 (ja) | 2012-05-23 |
| TW200745757A (en) | 2007-12-16 |
| KR20080081370A (ko) | 2008-09-09 |
| KR101039545B1 (ko) | 2011-06-09 |
| US20090023102A1 (en) | 2009-01-22 |
| US8133653B2 (en) | 2012-03-13 |
| JP2007206425A (ja) | 2007-08-16 |
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