[go: up one dir, main page]

TWI370843B - Ceria slurry for polishing semiconductor thin layer - Google Patents

Ceria slurry for polishing semiconductor thin layer

Info

Publication number
TWI370843B
TWI370843B TW094107844A TW94107844A TWI370843B TW I370843 B TWI370843 B TW I370843B TW 094107844 A TW094107844 A TW 094107844A TW 94107844 A TW94107844 A TW 94107844A TW I370843 B TWI370843 B TW I370843B
Authority
TW
Taiwan
Prior art keywords
thin layer
semiconductor thin
polishing semiconductor
ceria slurry
ceria
Prior art date
Application number
TW094107844A
Other languages
Chinese (zh)
Other versions
TW200536930A (en
Inventor
Yun Ju Cho
Jong Sik Jeong
Dong Chyun Choi
Original Assignee
Samsung Corning Prec Mat Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Corning Prec Mat Co filed Critical Samsung Corning Prec Mat Co
Publication of TW200536930A publication Critical patent/TW200536930A/en
Application granted granted Critical
Publication of TWI370843B publication Critical patent/TWI370843B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW094107844A 2004-03-16 2005-03-15 Ceria slurry for polishing semiconductor thin layer TWI370843B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20040017741 2004-03-16

Publications (2)

Publication Number Publication Date
TW200536930A TW200536930A (en) 2005-11-16
TWI370843B true TWI370843B (en) 2012-08-21

Family

ID=34986979

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094107844A TWI370843B (en) 2004-03-16 2005-03-15 Ceria slurry for polishing semiconductor thin layer

Country Status (5)

Country Link
US (1) US20050208882A1 (en)
JP (1) JP4927342B2 (en)
KR (1) KR100588404B1 (en)
CN (1) CN1680510A (en)
TW (1) TWI370843B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4541796B2 (en) * 2004-07-30 2010-09-08 ルネサスエレクトロニクス株式会社 Manufacturing method of polishing slurry
KR100864996B1 (en) * 2004-09-28 2008-10-23 히다치 가세고교 가부시끼가이샤 Cmp polishing compound and method for polishing substrate
EP1994112B1 (en) * 2006-01-25 2018-09-19 LG Chem, Ltd. Cmp slurry and method for polishing semiconductor wafer using the same
KR101107524B1 (en) * 2008-09-25 2012-01-31 솔브레인 주식회사 Process for preparing cerium oxide aqueous dispersion
JP2015120845A (en) * 2013-12-24 2015-07-02 旭硝子株式会社 Manufacturing method of polishing agent, polishing method, and manufacturing method of semiconductor integrated circuit device
KR101706975B1 (en) * 2014-02-14 2017-02-16 주식회사 케이씨텍 Manufacturing method of slurry composition and slurry composition thereby
US10319601B2 (en) 2017-03-23 2019-06-11 Applied Materials, Inc. Slurry for polishing of integrated circuit packaging

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11320418A (en) * 1996-03-29 1999-11-24 Hitachi Chem Co Ltd Cerium oxide abrasive and substrate manufacturing method
JP3560151B2 (en) * 1996-02-07 2004-09-02 日立化成工業株式会社 Cerium oxide abrasive, semiconductor chip, method for producing them, and method for polishing substrate
JPH11181403A (en) * 1997-12-18 1999-07-06 Hitachi Chem Co Ltd Cerium oxide abrasive and substrate polishing method
US6383905B2 (en) * 1998-07-31 2002-05-07 Stmicroelectronics, Inc. Formation of micro rough poly surface for low sheet resistance salicided sub-quarter micron poly lines
JP3983949B2 (en) * 1998-12-21 2007-09-26 昭和電工株式会社 Polishing cerium oxide slurry, its production method and polishing method
US6396136B2 (en) * 1998-12-31 2002-05-28 Texas Instruments Incorporated Ball grid package with multiple power/ground planes
US6244935B1 (en) * 1999-02-04 2001-06-12 Applied Materials, Inc. Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet
EP1691401B1 (en) * 1999-06-18 2012-06-13 Hitachi Chemical Co., Ltd. Method for polishing a substrate using CMP abrasive
JP2001011432A (en) 1999-06-29 2001-01-16 Seimi Chem Co Ltd Abrasive agent for semiconductor
US6348076B1 (en) * 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
KR100699735B1 (en) * 1999-11-04 2007-03-27 세이미 케미칼 가부시끼가이샤 Abrasives for Semiconductors Containing Peptides
US6293848B1 (en) * 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US6319096B1 (en) * 1999-11-15 2001-11-20 Cabot Corporation Composition and method for planarizing surfaces
JP2001308044A (en) * 2000-04-26 2001-11-02 Hitachi Chem Co Ltd Oxide cerium polishing agent and polishing method for substrate
JP2002075927A (en) * 2000-08-24 2002-03-15 Fujimi Inc Composition for polishing and polishing method using it
DE10063492A1 (en) * 2000-12-20 2002-06-27 Bayer Ag Process for chemical-mechanical polishing of insulation layers using the STI technique at elevated temperatures
JP3685481B2 (en) * 2000-12-27 2005-08-17 三井金属鉱業株式会社 Cerium-based abrasive particle powder excellent in particle size distribution, abrasive slurry containing the particle powder, and method for producing the particle powder
JP2002241739A (en) * 2001-02-20 2002-08-28 Hitachi Chem Co Ltd Polishing agent and method for polishing substrate
US6726534B1 (en) * 2001-03-01 2004-04-27 Cabot Microelectronics Corporation Preequilibrium polishing method and system
JP2003209076A (en) * 2002-01-15 2003-07-25 Hitachi Chem Co Ltd Cmp abrasive and abrading method for substrate
KR100449948B1 (en) * 2002-05-18 2004-09-30 주식회사 하이닉스반도체 Method for fabricating contact plug with low contact resistance
US6913634B2 (en) * 2003-02-14 2005-07-05 J. M. Huber Corporation Abrasives for copper CMP and methods for making
JP2005093785A (en) * 2003-09-18 2005-04-07 Toshiba Corp CMP slurry, polishing method, and semiconductor device manufacturing method
US7241725B2 (en) * 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
US6964600B2 (en) * 2003-11-21 2005-11-15 Praxair Technology, Inc. High selectivity colloidal silica slurry

Also Published As

Publication number Publication date
JP2005268799A (en) 2005-09-29
KR100588404B1 (en) 2006-06-12
KR20060043627A (en) 2006-05-15
US20050208882A1 (en) 2005-09-22
JP4927342B2 (en) 2012-05-09
CN1680510A (en) 2005-10-12
TW200536930A (en) 2005-11-16

Similar Documents

Publication Publication Date Title
TWI365907B (en) Composition for polishing semiconductor layers
DK1660606T3 (en) Abrasive particles for chemical-mechanical polishing
IL184281A0 (en) Chemical mechanical polishing pad dresser
GB2412917B (en) Polishing composition
IL186687A0 (en) Multi-layer polishing pad material for cmp
EP1708259B8 (en) Semiconductor device having GaN-based semiconductor layer
TWI350564B (en) Polising slurry for chemical mechanical polishing (cmp) and polishing method
TWI368648B (en) Slurry composition for chemical mechanical polishing and precursor composition thereof
AU2003272674A1 (en) Polishing pad for planarization
IL185418A0 (en) Composition and method for polishing a sapphire surface
ZA200901042B (en) Polycrystalline diamond abrasive compacts
SG120204A1 (en) An improved retaining ring structure for edge control during chemical-mechanical polishing
GB2454343B (en) Polishing composition for hard disk substrate
TWI372093B (en) Radial-biased polishing pad
ZA200700608B (en) Cement Grinding Aid
GB0505752D0 (en) Diamond based substrate for gan devices
GB2418534B (en) Finfet with dual silicon gate layer for chemical mechanical polishing planarization
IL190409A0 (en) Polishing slurries and methods for utilizing same
TWI372094B (en) Polishing pad for electrochemical mechanical polishing
TWI371339B (en) Substrate retaining ring for cmp
AU2003254825A1 (en) Cmp abrasive and substrate polishing method
GB2421955B (en) Polishing composition for glass substrate
TWI349030B (en) Adjuvant for cmp slurry
AU2003296130A8 (en) Slurry composition for chemical mechanical polishing, method for planarization of surface of semiconductor element using the same, and method for controlling selection ratio of slurry composition
GB2433516B (en) Polishing composition for glass substrate

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees