TWI370535B - Device for protecting semiconductor ic - Google Patents
Device for protecting semiconductor icInfo
- Publication number
- TWI370535B TWI370535B TW096138908A TW96138908A TWI370535B TW I370535 B TWI370535 B TW I370535B TW 096138908 A TW096138908 A TW 096138908A TW 96138908 A TW96138908 A TW 96138908A TW I370535 B TWI370535 B TW I370535B
- Authority
- TW
- Taiwan
- Prior art keywords
- protecting semiconductor
- protecting
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H10W42/80—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060137353A KR100831269B1 (ko) | 2006-12-29 | 2006-12-29 | 반도체 집적회로 소자를 정전기 방전으로부터 보호하는장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200828557A TW200828557A (en) | 2008-07-01 |
| TWI370535B true TWI370535B (en) | 2012-08-11 |
Family
ID=39582621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096138908A TWI370535B (en) | 2006-12-29 | 2007-10-17 | Device for protecting semiconductor ic |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7869175B2 (zh) |
| KR (1) | KR100831269B1 (zh) |
| CN (1) | CN101211910A (zh) |
| TW (1) | TWI370535B (zh) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8693148B2 (en) | 2009-01-08 | 2014-04-08 | Micron Technology, Inc. | Over-limit electrical condition protection circuits for integrated circuits |
| CN102148246B (zh) * | 2010-02-10 | 2015-07-22 | 上海华虹宏力半导体制造有限公司 | 静电放电保护电路 |
| US8611058B2 (en) | 2011-08-23 | 2013-12-17 | Micron Technology, Inc. | Combination ESD protection circuits and methods |
| US8724268B2 (en) | 2011-08-30 | 2014-05-13 | Micron Technology, Inc. | Over-limit electrical condition protection circuits and methods |
| US8848326B2 (en) * | 2012-03-09 | 2014-09-30 | Globalfoundries Singapore Pte. Ltd. | Cross-domain ESD protection scheme |
| CN104578036B (zh) * | 2015-01-27 | 2018-05-01 | 京东方科技集团股份有限公司 | 一种静电保护电路、静电保护系统及显示器件 |
| US9583406B2 (en) * | 2015-03-17 | 2017-02-28 | Infineon Technologies Austria Ag | System and method for dual-region singulation |
| FR3044166B1 (fr) * | 2015-11-19 | 2018-03-23 | Stmicroelectronics Sa | Dispositif electronique, en particulier pour la protection contre des surtensions |
| JP2017212295A (ja) | 2016-05-24 | 2017-11-30 | 東芝メモリ株式会社 | 半導体装置 |
| US9882003B1 (en) | 2016-07-11 | 2018-01-30 | Tower Semiconductor Ltd. | Device and system of a silicon controlled rectifier (SCR) |
| CN110416209B (zh) * | 2019-07-29 | 2021-09-28 | 成都芯图科技有限责任公司 | 一种具有反馈结构的半导体功率晶体管及集成电路与封装结构 |
| TWI799312B (zh) * | 2022-07-05 | 2023-04-11 | 瑞昱半導體股份有限公司 | 輸出入埠電路及其晶片 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW247368B (en) * | 1993-09-29 | 1995-05-11 | Seiko Epuson Co | Current regulating semiconductor integrate circuit device and fabrication method of the same |
| US6016002A (en) | 1996-12-20 | 2000-01-18 | Texas Instruments Incorporated | Stacked silicon-controlled rectifier having a low voltage trigger and adjustable holding voltage for ESD protection |
| TW454328B (en) * | 1998-10-22 | 2001-09-11 | Winbond Electronics Corp | ESD protection circuit triggered by diodes |
| KR20020055936A (ko) * | 2000-12-29 | 2002-07-10 | 박종섭 | 정전기 방전 보호 회로 |
| US7170726B2 (en) * | 2003-01-16 | 2007-01-30 | Silicon Integrated Systems Corp. | Uniform turn-on design on multiple-finger MOSFET for ESD protection application |
| US7224560B2 (en) * | 2003-02-13 | 2007-05-29 | Medtronic, Inc. | Destructive electrical transient protection |
| US7342281B2 (en) | 2004-12-14 | 2008-03-11 | Electronics And Telecommunications Research Institute | Electrostatic discharge protection circuit using triple welled silicon controlled rectifier |
| KR100664377B1 (ko) * | 2004-12-30 | 2007-01-02 | 동부일렉트로닉스 주식회사 | 반도체-제어 정류기 정전 방전 보호회로 |
-
2006
- 2006-12-29 KR KR1020060137353A patent/KR100831269B1/ko active Active
-
2007
- 2007-10-11 US US11/870,902 patent/US7869175B2/en active Active
- 2007-10-17 TW TW096138908A patent/TWI370535B/zh not_active IP Right Cessation
- 2007-12-06 CN CNA2007101947954A patent/CN101211910A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US7869175B2 (en) | 2011-01-11 |
| CN101211910A (zh) | 2008-07-02 |
| KR100831269B1 (ko) | 2008-05-22 |
| US20080157204A1 (en) | 2008-07-03 |
| TW200828557A (en) | 2008-07-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |