TWI370490B - Method & apparatus to improve plasma etch uniformity - Google Patents
Method & apparatus to improve plasma etch uniformityInfo
- Publication number
- TWI370490B TWI370490B TW094132966A TW94132966A TWI370490B TW I370490 B TWI370490 B TW I370490B TW 094132966 A TW094132966 A TW 094132966A TW 94132966 A TW94132966 A TW 94132966A TW I370490 B TWI370490 B TW I370490B
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma etch
- etch uniformity
- improve plasma
- improve
- uniformity
- Prior art date
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US61586004P | 2004-10-04 | 2004-10-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200612489A TW200612489A (en) | 2006-04-16 |
| TWI370490B true TWI370490B (en) | 2012-08-11 |
Family
ID=38772263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094132966A TWI370490B (en) | 2004-10-04 | 2005-09-23 | Method & apparatus to improve plasma etch uniformity |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN101048842A (en) |
| TW (1) | TWI370490B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI783980B (en) * | 2017-03-29 | 2022-11-21 | 日商東京威力科創股份有限公司 | Advanced optical sensor, system, and methodologies for etch processing monitoring |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101970166B (en) * | 2007-12-13 | 2013-05-08 | 朗姆研究公司 | Plasma unconfinement sensor and methods thereof |
| CN102315123B (en) * | 2010-07-07 | 2013-05-01 | 中国科学院微电子研究所 | A method to improve the repeatability of GaN HEMT gate trench etching |
| JP5487302B2 (en) * | 2010-11-30 | 2014-05-07 | キヤノンアネルバ株式会社 | Plasma processing equipment |
| KR101256962B1 (en) | 2011-05-31 | 2013-04-26 | 세메스 주식회사 | Antenna unit, substrate treating apparatus including the unit and substrate treating method using the apparatus |
| GB201318249D0 (en) * | 2013-10-15 | 2013-11-27 | Spts Technologies Ltd | Plasma etching apparatus |
| KR102190794B1 (en) * | 2018-07-02 | 2020-12-15 | 주식회사 기가레인 | A substrate processing apparatus for mechanically controlling plasma density |
| CN114788419A (en) * | 2020-03-11 | 2022-07-22 | 株式会社国际电气 | Substrate processing apparatus, method of manufacturing semiconductor device, and program |
| CN114724907B (en) * | 2021-01-04 | 2025-02-14 | 江苏鲁汶仪器股份有限公司 | An ion source device with adjustable plasma density |
-
2005
- 2005-09-21 CN CN 200580032034 patent/CN101048842A/en active Pending
- 2005-09-23 TW TW094132966A patent/TWI370490B/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI783980B (en) * | 2017-03-29 | 2022-11-21 | 日商東京威力科創股份有限公司 | Advanced optical sensor, system, and methodologies for etch processing monitoring |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101048842A (en) | 2007-10-03 |
| TW200612489A (en) | 2006-04-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |