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TWI368951B - Wafer charge compensation device and ion implantation system having the same - Google Patents

Wafer charge compensation device and ion implantation system having the same

Info

Publication number
TWI368951B
TWI368951B TW094119655A TW94119655A TWI368951B TW I368951 B TWI368951 B TW I368951B TW 094119655 A TW094119655 A TW 094119655A TW 94119655 A TW94119655 A TW 94119655A TW I368951 B TWI368951 B TW I368951B
Authority
TW
Taiwan
Prior art keywords
same
ion implantation
compensation device
implantation system
charge compensation
Prior art date
Application number
TW094119655A
Other languages
English (en)
Other versions
TW200618126A (en
Inventor
Hiroshi Kawaguchi
Makoto Sano
Michiro Sugitani
Junichi Murakami
Mitsukuni Tsukihara
Mitsuaki Kabasawai
Takashi Kuroda
Kazunari Ueda
Hiroshi Sogabe
Original Assignee
Sumitomo Eaton Nova
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Eaton Nova filed Critical Sumitomo Eaton Nova
Publication of TW200618126A publication Critical patent/TW200618126A/zh
Application granted granted Critical
Publication of TWI368951B publication Critical patent/TWI368951B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/26—Mass spectrometers or separator tubes
    • H10P30/20—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
TW094119655A 2004-11-30 2005-06-14 Wafer charge compensation device and ion implantation system having the same TWI368951B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004345230A JP4533112B2 (ja) 2004-11-30 2004-11-30 ウエハ帯電抑制装置及びこれを備えたイオン注入装置

Publications (2)

Publication Number Publication Date
TW200618126A TW200618126A (en) 2006-06-01
TWI368951B true TWI368951B (en) 2012-07-21

Family

ID=36051514

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094119655A TWI368951B (en) 2004-11-30 2005-06-14 Wafer charge compensation device and ion implantation system having the same

Country Status (5)

Country Link
US (1) US7304319B2 (zh)
EP (1) EP1662540A3 (zh)
JP (1) JP4533112B2 (zh)
KR (1) KR101190115B1 (zh)
TW (1) TWI368951B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI680695B (zh) * 2015-12-27 2019-12-21 美商恩特葛瑞斯股份有限公司 藉由於濺鍍氣體混合物中使用追蹤原位清潔氣體以改良離子佈植淹沒式等離子體槍效能

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5100963B2 (ja) * 2004-11-30 2012-12-19 株式会社Ｓｅｎ ビーム照射装置
US7675730B2 (en) 2007-06-25 2010-03-09 Varian Semiconductor Equipment Associates, Inc. Techniques for detecting wafer charging in a plasma processing system
US7800083B2 (en) * 2007-11-06 2010-09-21 Axcelis Technologies, Inc. Plasma electron flood for ion beam implanter
US8124946B2 (en) * 2008-06-25 2012-02-28 Axcelis Technologies Inc. Post-decel magnetic energy filter for ion implantation systems
US8227773B2 (en) 2010-07-29 2012-07-24 Axcelis Technologies, Inc. Versatile beam glitch detection system
US8471476B2 (en) * 2010-10-08 2013-06-25 Varian Semiconductor Equipment Associates, Inc. Inductively coupled plasma flood gun using an immersed low inductance FR coil and multicusp magnetic arrangement
US9053907B2 (en) * 2012-04-04 2015-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. System and method of ion neutralization with multiple-zoned plasma flood gun
WO2015134108A1 (en) * 2014-03-04 2015-09-11 White Nicholas R Ion beam sputter deposition assembly, sputtering system, and sputter method of physical vapor deposition
CN105470084B (zh) * 2014-07-31 2017-12-26 上海凯世通半导体股份有限公司 电子供应系统
KR101885568B1 (ko) * 2016-07-29 2018-08-08 세메스 주식회사 코팅 유닛, 이를 포함하는 코팅 장치 및 코팅 방법
JP6814081B2 (ja) 2017-03-29 2021-01-13 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2558362Y2 (ja) * 1991-10-09 1997-12-24 日新電機株式会社 フリーマン型イオン源
US5466929A (en) * 1992-02-21 1995-11-14 Hitachi, Ltd. Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
JP3147526B2 (ja) * 1992-09-10 2001-03-19 富士通株式会社 イオン注入装置
JPH08190887A (ja) * 1995-01-11 1996-07-23 Nissin Electric Co Ltd イオン注入装置
JP3417175B2 (ja) * 1995-11-21 2003-06-16 日新電機株式会社 イオン照射装置
JPH10335097A (ja) * 1997-03-31 1998-12-18 Hitachi Ltd プラズマ処理装置およびプラズマ処理方法
US6180954B1 (en) * 1997-05-22 2001-01-30 Eaton Corporation Dual-walled exhaust tubing for vacuum pump
US6313428B1 (en) * 1999-10-12 2001-11-06 Advanced Ion Beam Technology, Inc. Apparatus and method for reducing space charge of ion beams and wafer charging
JP4351814B2 (ja) * 2000-07-21 2009-10-28 株式会社リコー カラー画像形成装置
JP3690517B2 (ja) * 2002-02-28 2005-08-31 住友イートンノバ株式会社 イオン注入方法及びイオン注入装置
JP3680274B2 (ja) * 2002-03-27 2005-08-10 住友イートンノバ株式会社 イオンビームの電荷中和装置とその方法
JP2004006109A (ja) * 2002-05-31 2004-01-08 Hitachi High-Technologies Corp イオンビーム処理装置
JP5042451B2 (ja) * 2004-11-30 2012-10-03 株式会社Ｓｅｎ ビーム空間電荷中和装置及びこれを備えたイオン注入装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI680695B (zh) * 2015-12-27 2019-12-21 美商恩特葛瑞斯股份有限公司 藉由於濺鍍氣體混合物中使用追蹤原位清潔氣體以改良離子佈植淹沒式等離子體槍效能

Also Published As

Publication number Publication date
KR20060060536A (ko) 2006-06-05
EP1662540A2 (en) 2006-05-31
US7304319B2 (en) 2007-12-04
KR101190115B1 (ko) 2012-10-11
JP2006156142A (ja) 2006-06-15
US20060113492A1 (en) 2006-06-01
TW200618126A (en) 2006-06-01
JP4533112B2 (ja) 2010-09-01
EP1662540A3 (en) 2011-04-27

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees