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TWI368661B - Method of forming inorganic insulating layer and method of fabricating array substrate for display device using the same - Google Patents

Method of forming inorganic insulating layer and method of fabricating array substrate for display device using the same

Info

Publication number
TWI368661B
TWI368661B TW096151001A TW96151001A TWI368661B TW I368661 B TWI368661 B TW I368661B TW 096151001 A TW096151001 A TW 096151001A TW 96151001 A TW96151001 A TW 96151001A TW I368661 B TWI368661 B TW I368661B
Authority
TW
Taiwan
Prior art keywords
display device
insulating layer
same
array substrate
inorganic insulating
Prior art date
Application number
TW096151001A
Other languages
English (en)
Other versions
TW200905002A (en
Inventor
Joo Soo Lim
Hong Sik Kim
Hee Young Kwack
Hyun Seok Hong
Byung Chul Ahn
Byoung Ho Lim
Original Assignee
Lg Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Display Co Ltd filed Critical Lg Display Co Ltd
Publication of TW200905002A publication Critical patent/TW200905002A/zh
Application granted granted Critical
Publication of TWI368661B publication Critical patent/TWI368661B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0652—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Crystal (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
TW096151001A 2007-07-20 2007-12-28 Method of forming inorganic insulating layer and method of fabricating array substrate for display device using the same TWI368661B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070073045A KR20090009612A (ko) 2007-07-20 2007-07-20 스퍼터링을 통한 무기절연막 형성방법

Publications (2)

Publication Number Publication Date
TW200905002A TW200905002A (en) 2009-02-01
TWI368661B true TWI368661B (en) 2012-07-21

Family

ID=40265163

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096151001A TWI368661B (en) 2007-07-20 2007-12-28 Method of forming inorganic insulating layer and method of fabricating array substrate for display device using the same

Country Status (4)

Country Link
US (1) US8377265B2 (zh)
KR (1) KR20090009612A (zh)
CN (1) CN101348894B (zh)
TW (1) TWI368661B (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101609727B1 (ko) * 2008-12-17 2016-04-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
US8840763B2 (en) * 2009-09-28 2014-09-23 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target
TWI464529B (zh) * 2009-12-09 2014-12-11 旭硝子股份有限公司 EUV microfilm with anti-reflective substrate, EUV microsurgical reflective mask substrate, EUV microsurgical reflective mask and manufacturing method of the reflective substrate
US8495607B2 (en) 2010-03-01 2013-07-23 International Business Machines Corporation Performing aggressive code optimization with an ability to rollback changes made by the aggressive optimizations
CN102148194B (zh) * 2010-11-26 2013-09-18 深圳市华星光电技术有限公司 薄膜晶体管、液晶显示面板及其制造方法
CN102116982B (zh) * 2010-11-26 2012-08-22 深圳市华星光电技术有限公司 液晶显示面板及其制造方法
CN103107133B (zh) * 2013-01-04 2015-04-22 京东方科技集团股份有限公司 阵列基板及其制造方法和显示装置
US9366784B2 (en) 2013-05-07 2016-06-14 Corning Incorporated Low-color scratch-resistant articles with a multilayer optical film
US9110230B2 (en) 2013-05-07 2015-08-18 Corning Incorporated Scratch-resistant articles with retained optical properties
US11267973B2 (en) 2014-05-12 2022-03-08 Corning Incorporated Durable anti-reflective articles
CN104775097B (zh) * 2014-09-15 2017-04-12 芜湖映日科技有限公司 一种低电阻率微硼掺杂旋转溅射硅靶材及其制备方法
CN107735697B (zh) 2015-09-14 2020-10-30 康宁股份有限公司 减反射制品以及包含其的显示器装置
CN114085037B (zh) 2018-08-17 2023-11-10 康宁股份有限公司 具有薄的耐久性减反射结构的无机氧化物制品
TW202031486A (zh) * 2018-11-15 2020-09-01 美商康寧公司 光學膜結構、具有光學膜結構的無機氧化物製品以及製造其的方法
US11512387B2 (en) * 2020-04-13 2022-11-29 Applied Materials, Inc. Methods and apparatus for passivating a target
US12147009B2 (en) 2020-07-09 2024-11-19 Corning Incorporated Textured region to reduce specular reflectance including a low refractive index substrate with higher elevated surfaces and lower elevated surfaces and a high refractive index material disposed on the lower elevated surfaces
CN115437058A (zh) * 2022-09-26 2022-12-06 福建福晶科技股份有限公司 一种谐振光栅偏振器及制备方法
CN120085496A (zh) * 2023-04-19 2025-06-03 厦门天马微电子有限公司 一种显示面板及显示装置

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Publication number Priority date Publication date Assignee Title
DE3417732A1 (de) * 1984-05-12 1986-07-10 Leybold-Heraeus GmbH, 5000 Köln Verfahren zum aufbringen von siliziumhaltigen schichten auf substraten durch katodenzerstaeubung und zerstaeubungskatode zur durchfuehrung des verfahrens
EP0388852B1 (en) * 1989-03-20 1995-06-28 Tosoh Corporation Magneto-optical recording medium and process for production of the same
US5047131A (en) * 1989-11-08 1991-09-10 The Boc Group, Inc. Method for coating substrates with silicon based compounds
US5320984A (en) * 1990-12-21 1994-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor film by sputter deposition in a hydrogen atmosphere
JPH0565642A (ja) * 1991-09-10 1993-03-19 Matsushita Electric Ind Co Ltd 反応性スパツタリング装置
TW319892B (zh) * 1993-07-14 1997-11-11 Omi Tadahiro
DE69431573T2 (de) * 1993-07-28 2003-06-12 Asahi Glass Co., Ltd. Verfahren zur Herstellung von Schichten
US5403458A (en) * 1993-08-05 1995-04-04 Guardian Industries Corp. Sputter-coating target and method of use
TW548860B (en) * 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP4332697B2 (ja) * 2002-01-10 2009-09-16 信越化学工業株式会社 スパッタターゲット
JP4486838B2 (ja) * 2003-04-25 2010-06-23 旭硝子株式会社 酸化ケイ素膜の製造方法および光学多層膜の製造方法
US20060272938A1 (en) * 2005-06-01 2006-12-07 Ta-Shuang Kuan Method of manufacturing a liquid crystal alignment film utilizing long-throw sputtering
CN1996415A (zh) * 2006-08-22 2007-07-11 深圳创维－Rgb电子有限公司 遥控器寻呼装置及方法

Also Published As

Publication number Publication date
TW200905002A (en) 2009-02-01
US20090023254A1 (en) 2009-01-22
CN101348894A (zh) 2009-01-21
KR20090009612A (ko) 2009-01-23
CN101348894B (zh) 2012-05-30
US8377265B2 (en) 2013-02-19

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