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TWI368299B - Vertical transistor and array of vertical transistor - Google Patents

Vertical transistor and array of vertical transistor

Info

Publication number
TWI368299B
TWI368299B TW097131242A TW97131242A TWI368299B TW I368299 B TWI368299 B TW I368299B TW 097131242 A TW097131242 A TW 097131242A TW 97131242 A TW97131242 A TW 97131242A TW I368299 B TWI368299 B TW I368299B
Authority
TW
Taiwan
Prior art keywords
vertical transistor
array
transistor
vertical
Prior art date
Application number
TW097131242A
Other languages
English (en)
Other versions
TW201007888A (en
Inventor
Kuo Chen Wang
Jung Hua Chen
Original Assignee
Nanya Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanya Technology Corp filed Critical Nanya Technology Corp
Priority to TW097131242A priority Critical patent/TWI368299B/zh
Priority to US12/236,517 priority patent/US7968937B2/en
Publication of TW201007888A publication Critical patent/TW201007888A/zh
Application granted granted Critical
Publication of TWI368299B publication Critical patent/TWI368299B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/016—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
TW097131242A 2008-08-15 2008-08-15 Vertical transistor and array of vertical transistor TWI368299B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW097131242A TWI368299B (en) 2008-08-15 2008-08-15 Vertical transistor and array of vertical transistor
US12/236,517 US7968937B2 (en) 2008-08-15 2008-09-24 Vertical transistor and array with vertical transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW097131242A TWI368299B (en) 2008-08-15 2008-08-15 Vertical transistor and array of vertical transistor

Publications (2)

Publication Number Publication Date
TW201007888A TW201007888A (en) 2010-02-16
TWI368299B true TWI368299B (en) 2012-07-11

Family

ID=41680703

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097131242A TWI368299B (en) 2008-08-15 2008-08-15 Vertical transistor and array of vertical transistor

Country Status (2)

Country Link
US (1) US7968937B2 (zh)
TW (1) TWI368299B (zh)

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* Cited by examiner, † Cited by third party
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KR101585615B1 (ko) * 2009-02-26 2016-01-14 삼성전자주식회사 반도체 장치
KR101399611B1 (ko) * 2010-02-05 2014-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제조 방법
US8361856B2 (en) 2010-11-01 2013-01-29 Micron Technology, Inc. Memory cells, arrays of memory cells, and methods of forming memory cells
US8450175B2 (en) 2011-02-22 2013-05-28 Micron Technology, Inc. Methods of forming a vertical transistor and at least a conductive line electrically coupled therewith
WO2012121265A1 (en) 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
US8686486B2 (en) 2011-03-31 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9006060B2 (en) 2012-08-21 2015-04-14 Micron Technology, Inc. N-type field effect transistors, arrays comprising N-type vertically-oriented transistors, methods of forming an N-type field effect transistor, and methods of forming an array comprising vertically-oriented N-type transistors
US9129896B2 (en) 2012-08-21 2015-09-08 Micron Technology, Inc. Arrays comprising vertically-oriented transistors, integrated circuitry comprising a conductive line buried in silicon-comprising semiconductor material, methods of forming a plurality of conductive lines buried in silicon-comprising semiconductor material, and methods of forming an array comprising vertically-oriented transistors
US9478550B2 (en) * 2012-08-27 2016-10-25 Micron Technology, Inc. Arrays of vertically-oriented transistors, and memory arrays including vertically-oriented transistors
US9111853B2 (en) 2013-03-15 2015-08-18 Micron Technology, Inc. Methods of forming doped elements of semiconductor device structures
KR102218266B1 (ko) * 2014-06-23 2021-02-22 인텔 코포레이션 수직 트랜지스터 아키텍처를 형성하기 위한 기술
US9673257B1 (en) * 2016-06-03 2017-06-06 Sandisk Technologies Llc Vertical thin film transistors with surround gates
US10381352B1 (en) * 2018-05-04 2019-08-13 Micron Technology, Inc. Integrated assemblies which include carbon-doped oxide, and methods of forming integrated assemblies
CN113629057B (zh) * 2021-08-09 2023-10-27 长鑫存储技术有限公司 半导体结构及其制造方法
CN118782607A (zh) * 2023-03-31 2024-10-15 长鑫存储技术有限公司 一种半导体结构及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06268173A (ja) * 1993-03-15 1994-09-22 Toshiba Corp 半導体記憶装置
US5432739A (en) * 1994-06-17 1995-07-11 Philips Electronics North America Corporation Non-volatile sidewall memory cell method of fabricating same
US6034389A (en) * 1997-01-22 2000-03-07 International Business Machines Corporation Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array
US5929477A (en) 1997-01-22 1999-07-27 International Business Machines Corporation Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array
US6559491B2 (en) 2001-02-09 2003-05-06 Micron Technology, Inc. Folded bit line DRAM with ultra thin body transistors
US6838723B2 (en) * 2002-08-29 2005-01-04 Micron Technology, Inc. Merged MOS-bipolar capacitor memory cell
US6956256B2 (en) * 2003-03-04 2005-10-18 Micron Technology Inc. Vertical gain cell
US7042047B2 (en) 2004-09-01 2006-05-09 Micron Technology, Inc. Memory cell, array, device and system with overlapping buried digit line and active area and method for forming same
US7285812B2 (en) 2004-09-02 2007-10-23 Micron Technology, Inc. Vertical transistors
KR100618875B1 (ko) * 2004-11-08 2006-09-04 삼성전자주식회사 수직 채널 ｍｏｓ 트랜지스터를 구비한 반도체 메모리소자 및 그 제조방법
US7326611B2 (en) * 2005-02-03 2008-02-05 Micron Technology, Inc. DRAM arrays, vertical transistor structures and methods of forming transistor structures and DRAM arrays
US7700473B2 (en) * 2007-04-09 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Gated semiconductor device and method of fabricating same

Also Published As

Publication number Publication date
US7968937B2 (en) 2011-06-28
US20100038709A1 (en) 2010-02-18
TW201007888A (en) 2010-02-16

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