TWI368294B - Interconnect structure fabrication method - Google Patents

Interconnect structure fabrication method

Info

Publication number: TWI368294B
Authority: TW; Taiwan
Prior art keywords: interconnect structure; fabrication method; structure fabrication; interconnect; fabrication
Prior art date: 2005-08-23

Application number

TW095125785A

Other languages

English (en)

Other versions

TW200723448A (en

Inventor

Chien Hsueh Shih

Ming Hsing Tsai

Hung Wen Su

Original Assignee

Taiwan Semiconductor Mfg Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2005-08-23

Filing date

2006-07-14

Publication date

2012-07-11

2006-07-14 Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd

2007-06-16 Publication of TW200723448A publication Critical patent/TW200723448A/zh

2012-07-11 Application granted granted Critical

2012-07-11 Publication of TWI368294B publication Critical patent/TWI368294B/zh

Classifications

- H10W20/037—
- H10W20/056—

TW095125785A 2005-08-23 2006-07-14 Interconnect structure fabrication method TWI368294B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US11/209,891 US20070048991A1 (en)	2005-08-23	2005-08-23	Copper interconnect structures and fabrication method thereof

Publications (2)

Publication Number	Publication Date
TW200723448A TW200723448A (en)	2007-06-16
TWI368294B true TWI368294B (en)	2012-07-11

Family

ID=37735055

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW095125785A TWI368294B (en)	2005-08-23	2006-07-14	Interconnect structure fabrication method

Country Status (5)

Country	Link
US (1)	US20070048991A1 (zh)
JP (2)	JP2007059901A (zh)
CN (1)	CN1921102A (zh)
FR (1)	FR2890238B1 (zh)
TW (1)	TWI368294B (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20070048991A1 (en) *	2005-08-23	2007-03-01	Taiwan Semiconductor Manufacturing Co., Ltd.	Copper interconnect structures and fabrication method thereof
US7777344B2 (en) *	2007-04-11	2010-08-17	Taiwan Semiconductor Manufacturing Company, Ltd.	Transitional interface between metal and dielectric in interconnect structures
US20090269507A1 (en) *	2008-04-29	2009-10-29	Sang-Ho Yu	Selective cobalt deposition on copper surfaces
JP5507909B2 (ja) *	2009-07-14	2014-05-28	東京エレクトロン株式会社	成膜方法
US8298948B2 (en) *	2009-11-06	2012-10-30	International Business Machines Corporation	Capping of copper interconnect lines in integrated circuit devices
CN104025261B (zh)	2011-11-04	2018-09-28	英特尔公司	形成自对准帽的方法和设备
CN114121785A (zh) *	2011-11-04	2022-03-01	英特尔公司	形成自对准帽的方法和设备
CN103390607B (zh) *	2012-05-09	2015-12-16	中芯国际集成电路制造(上海)有限公司	铜互连结构及其形成方法
CN102881647B (zh) *	2012-10-12	2015-09-30	上海华力微电子有限公司	铜金属覆盖层的制备方法
CN103972156B (zh) *	2013-02-06	2016-09-14	中芯国际集成电路制造(上海)有限公司	半导体互连结构及其制作方法
US8951909B2 (en) *	2013-03-13	2015-02-10	Taiwan Semiconductor Manufacturing Company Limited	Integrated circuit structure and formation
US9583359B2 (en)	2014-04-04	2017-02-28	Fujifilm Planar Solutions, LLC	Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films
US20150380296A1 (en) *	2014-06-25	2015-12-31	Lam Research Corporation	Cleaning of carbon-based contaminants in metal interconnects for interconnect capping applications
DE102018102685A1 (de) *	2017-11-30	2019-06-06	Taiwan Semiconductor Manufacturing Co., Ltd.	Kontaktbildungsverfahren und zugehörige Struktur

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0521459A (ja) *	1990-11-26	1993-01-29	Seiko Epson Corp	半導体装置の製造方法
JPH08264538A (ja) *	1995-03-28	1996-10-11	Sumitomo Metal Ind Ltd	配線の形成方法
JP3540699B2 (ja) *	1998-01-12	2004-07-07	松下電器産業株式会社	半導体装置の製造方法
US6232212B1 (en) *	1999-02-23	2001-05-15	Lucent Technologies	Flip chip bump bonding
US6046108A (en) *	1999-06-25	2000-04-04	Taiwan Semiconductor Manufacturing Company	Method for selective growth of Cu3 Ge or Cu5 Si for passivation of damascene copper structures and device manufactured thereby
US6734559B1 (en) *	1999-09-17	2004-05-11	Advanced Micro Devices, Inc.	Self-aligned semiconductor interconnect barrier and manufacturing method therefor
US6620720B1 (en) *	2000-04-10	2003-09-16	Agere Systems Inc	Interconnections to copper IC's
JP2002110676A (ja) *	2000-09-26	2002-04-12	Toshiba Corp	多層配線を有する半導体装置
US6977224B2 (en) *	2000-12-28	2005-12-20	Intel Corporation	Method of electroless introduction of interconnect structures
KR20040018558A (ko) *	2001-08-13	2004-03-03	가부시키 가이샤 에바라 세이사꾸쇼	반도체장치와 그 제조방법 및 도금액
JP2003124189A (ja) *	2001-10-10	2003-04-25	Fujitsu Ltd	半導体装置の製造方法
JP2004015028A (ja) *	2002-06-11	2004-01-15	Ebara Corp	基板処理方法及び半導体装置
JP2004095865A (ja) *	2002-08-30	2004-03-25	Nec Electronics Corp	半導体装置およびその製造方法
KR100542388B1 (ko) *	2003-07-18	2006-01-11	주식회사 하이닉스반도체	반도체 소자의 금속배선 형성방법
JP2005044910A (ja) *	2003-07-24	2005-02-17	Ebara Corp	配線形成方法及び配線形成装置
JP2005217371A (ja) *	2004-02-02	2005-08-11	Matsushita Electric Ind Co Ltd	半導体装置およびその製造方法
US20070048991A1 (en) *	2005-08-23	2007-03-01	Taiwan Semiconductor Manufacturing Co., Ltd.	Copper interconnect structures and fabrication method thereof
KR20070071020A (ko) *	2005-12-29	2007-07-04	동부일렉트로닉스 주식회사	캐핑 금속층에 의해 보호된 구리 금속 배선 및 그 제조방법

2005
- 2005-08-23 US US11/209,891 patent/US20070048991A1/en not_active Abandoned
2006
- 2006-07-14 TW TW095125785A patent/TWI368294B/zh active
- 2006-08-08 JP JP2006216248A patent/JP2007059901A/ja active Pending
- 2006-08-10 FR FR0607252A patent/FR2890238B1/fr active Active
- 2006-08-22 CN CNA2006101214272A patent/CN1921102A/zh active Pending
2009
- 2009-08-19 JP JP2009190454A patent/JP5528027B2/ja active Active

Also Published As

Publication number	Publication date
FR2890238A1 (fr)	2007-03-02
US20070048991A1 (en)	2007-03-01
CN1921102A (zh)	2007-02-28
JP5528027B2 (ja)	2014-06-25
JP2009278132A (ja)	2009-11-26
JP2007059901A (ja)	2007-03-08
TW200723448A (en)	2007-06-16
FR2890238B1 (fr)	2017-02-24

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PL1848867T3 (pl)	2017-09-29	Struktura wzmacniająca
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