TWI368112B - Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method - Google Patents
Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing methodInfo
- Publication number
- TWI368112B TWI368112B TW096125282A TW96125282A TWI368112B TW I368112 B TWI368112 B TW I368112B TW 096125282 A TW096125282 A TW 096125282A TW 96125282 A TW96125282 A TW 96125282A TW I368112 B TWI368112 B TW I368112B
- Authority
- TW
- Taiwan
- Prior art keywords
- lithographic
- device manufacturing
- processing cell
- inspection method
- lithographic processing
- Prior art date
Links
- 238000007689 inspection Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706847—Production of measurement radiation, e.g. synchrotron, free-electron laser, plasma source or higher harmonic generation [HHG]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Accessory Devices And Overall Control Thereof (AREA)
- Spectrometry And Color Measurement (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/488,170 US7916284B2 (en) | 2006-07-18 | 2006-07-18 | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200813654A TW200813654A (en) | 2008-03-16 |
| TWI368112B true TWI368112B (en) | 2012-07-11 |
Family
ID=38561233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096125282A TWI368112B (en) | 2006-07-18 | 2007-07-11 | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7916284B2 (zh) |
| EP (1) | EP1881374B1 (zh) |
| JP (1) | JP4912241B2 (zh) |
| KR (1) | KR100919000B1 (zh) |
| CN (1) | CN101109910B (zh) |
| SG (1) | SG139628A1 (zh) |
| TW (1) | TWI368112B (zh) |
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| US8169703B1 (en) * | 2006-09-06 | 2012-05-01 | Lightsmyth Technologies Inc. | Monolithic arrays of diffraction gratings |
| DE102006056625B4 (de) * | 2006-11-30 | 2014-11-20 | Globalfoundries Inc. | Verfahren und Teststruktur zum Bestimmen von Fokuseinstellungen in einem Lithographieprozess auf der Grundlage von CD-Messungen |
| JP2008233343A (ja) * | 2007-03-19 | 2008-10-02 | Advanced Mask Inspection Technology Kk | 試料検査装置、補正画像生成方法及びプログラム |
| JP5017147B2 (ja) * | 2008-03-06 | 2012-09-05 | 東京エレクトロン株式会社 | 基板の処理方法、プログラム及びコンピュータ記憶媒体及び基板処理システム |
| US7967995B2 (en) * | 2008-03-31 | 2011-06-28 | Tokyo Electron Limited | Multi-layer/multi-input/multi-output (MLMIMO) models and method for using |
| NL1036734A1 (nl) * | 2008-04-09 | 2009-10-12 | Asml Netherlands Bv | A method of assessing a model, an inspection apparatus and a lithographic apparatus. |
| NL1036647A1 (nl) * | 2008-04-16 | 2009-10-19 | Asml Netherlands Bv | A method of measuring a lithographic projection apparatus. |
| WO2009143200A2 (en) * | 2008-05-21 | 2009-11-26 | Kla-Tencor Corporation | Substrate matrix to decouple tool and process effects |
| WO2009150031A1 (en) * | 2008-05-29 | 2009-12-17 | Asml Netherlands B.V. | Inspection method and apparatus |
| EP2131245A3 (en) * | 2008-06-02 | 2012-08-01 | ASML Netherlands BV | Lithographic apparatus and its focus determination method |
| NL2002962A1 (nl) * | 2008-06-11 | 2009-12-14 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. |
| CN102272678A (zh) * | 2008-12-30 | 2011-12-07 | Asml荷兰有限公司 | 检验方法和设备、光刻设备、光刻处理单元和器件制造方法 |
| TWI405283B (zh) * | 2009-03-18 | 2013-08-11 | Marketech Int Corp | Semiconductor Film Formation Detection and Adjustment System and Method |
| CN102422227B (zh) | 2009-05-12 | 2014-09-17 | Asml荷兰有限公司 | 用于光刻技术的检查方法 |
| NL2004946A (en) * | 2009-07-06 | 2011-01-10 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. |
| JP5406623B2 (ja) * | 2009-08-10 | 2014-02-05 | キヤノン株式会社 | 計測装置、露光装置及びデバイスの製造方法 |
| JP2011040547A (ja) | 2009-08-10 | 2011-02-24 | Canon Inc | 計測装置、露光装置及びデバイスの製造方法 |
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| US9177219B2 (en) * | 2010-07-09 | 2015-11-03 | Asml Netherlands B.V. | Method of calibrating a lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product |
| CN102486605B (zh) * | 2010-12-02 | 2014-04-16 | 上海华虹宏力半导体制造有限公司 | 覆盖形貌的光学临近效应修正方法 |
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| JP5864752B2 (ja) * | 2011-08-31 | 2016-02-17 | エーエスエムエル ネザーランズ ビー.ブイ. | 焦点補正を決定する方法、リソグラフィ処理セル及びデバイス製造方法 |
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| WO2014198516A1 (en) * | 2013-06-12 | 2014-12-18 | Asml Netherlands B.V. | Method of determining critical-dimension-related properties, inspection apparatus and device manufacturing method |
| US10502694B2 (en) * | 2013-08-06 | 2019-12-10 | Kla-Tencor Corporation | Methods and apparatus for patterned wafer characterization |
| WO2015080858A1 (en) | 2013-12-01 | 2015-06-04 | Kla-Tencor Corporation | Target element types for process parameter metrology |
| CN105934716A (zh) * | 2013-12-19 | 2016-09-07 | Asml荷兰有限公司 | 检查方法和设备以及光刻设备 |
| WO2015143378A1 (en) * | 2014-03-20 | 2015-09-24 | Kla-Tencor Corporation | Compressive sensing with illumination patterning |
| NL2014938A (en) | 2014-06-30 | 2016-03-31 | Asml Netherlands Bv | Method of determining dose, inspection apparatus, patterning device, substrate and device manufacturing method. |
| JP6367021B2 (ja) * | 2014-07-02 | 2018-08-01 | 東芝メモリ株式会社 | 露光条件解析方法 |
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| JP6788839B2 (ja) * | 2016-01-28 | 2020-11-25 | 大日本印刷株式会社 | 荷電粒子ビーム描画装置、荷電粒子ビーム描画システムおよび描画データ生成方法 |
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| US10897566B2 (en) * | 2016-09-28 | 2021-01-19 | Kla-Tencor Corporation | Direct focusing with image binning in metrology tools |
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| US12379670B2 (en) | 2020-05-29 | 2025-08-05 | Asml Netherlands B.V. | Substrate, patterning device and metrology apparatuses |
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2006
- 2006-07-18 US US11/488,170 patent/US7916284B2/en active Active
-
2007
- 2007-06-07 SG SG200704170-0A patent/SG139628A1/en unknown
- 2007-07-09 EP EP07252745.0A patent/EP1881374B1/en not_active Not-in-force
- 2007-07-11 JP JP2007181810A patent/JP4912241B2/ja active Active
- 2007-07-11 TW TW096125282A patent/TWI368112B/zh active
- 2007-07-18 KR KR1020070071668A patent/KR100919000B1/ko active Active
- 2007-07-18 CN CN2007101366551A patent/CN101109910B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20080008275A (ko) | 2008-01-23 |
| SG139628A1 (en) | 2008-02-29 |
| US20080018874A1 (en) | 2008-01-24 |
| EP1881374A2 (en) | 2008-01-23 |
| EP1881374B1 (en) | 2018-09-05 |
| CN101109910B (zh) | 2011-06-29 |
| KR100919000B1 (ko) | 2009-09-25 |
| EP1881374A3 (en) | 2017-05-31 |
| CN101109910A (zh) | 2008-01-23 |
| TW200813654A (en) | 2008-03-16 |
| JP4912241B2 (ja) | 2012-04-11 |
| JP2008028389A (ja) | 2008-02-07 |
| US7916284B2 (en) | 2011-03-29 |
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