[go: up one dir, main page]

TWI367965B - Methog for producing lithium tantalate substrate - Google Patents

Methog for producing lithium tantalate substrate

Info

Publication number
TWI367965B
TWI367965B TW093131081A TW93131081A TWI367965B TW I367965 B TWI367965 B TW I367965B TW 093131081 A TW093131081 A TW 093131081A TW 93131081 A TW93131081 A TW 93131081A TW I367965 B TWI367965 B TW I367965B
Authority
TW
Taiwan
Prior art keywords
methog
lithium tantalate
producing lithium
tantalate substrate
substrate
Prior art date
Application number
TW093131081A
Other languages
English (en)
Other versions
TW200523408A (en
Inventor
Tomio Kajigaya
Takashi Kakuta
Original Assignee
Sumitomo Metal Mining Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co filed Critical Sumitomo Metal Mining Co
Publication of TW200523408A publication Critical patent/TW200523408A/zh
Application granted granted Critical
Publication of TWI367965B publication Critical patent/TWI367965B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
TW093131081A 2003-10-16 2004-10-14 Methog for producing lithium tantalate substrate TWI367965B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003356517A JP4063190B2 (ja) 2003-10-16 2003-10-16 タンタル酸リチウム基板の製造方法

Publications (2)

Publication Number Publication Date
TW200523408A TW200523408A (en) 2005-07-16
TWI367965B true TWI367965B (en) 2012-07-11

Family

ID=34463209

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093131081A TWI367965B (en) 2003-10-16 2004-10-14 Methog for producing lithium tantalate substrate

Country Status (6)

Country Link
US (1) US7442250B2 (zh)
JP (1) JP4063190B2 (zh)
KR (1) KR101213411B1 (zh)
CN (1) CN100351436C (zh)
TW (1) TWI367965B (zh)
WO (1) WO2005038099A1 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6932957B2 (en) 2002-06-28 2005-08-23 Silicon Light Machines Corporation Method and apparatus for increasing bulk conductivity of a ferroelectric material
JP3938147B2 (ja) * 2003-04-08 2007-06-27 住友金属鉱山株式会社 タンタル酸リチウム基板およびその製造方法
JP4063191B2 (ja) * 2003-10-16 2008-03-19 住友金属鉱山株式会社 タンタル酸リチウム基板の製造方法
JP2007176715A (ja) * 2005-12-27 2007-07-12 Sumitomo Metal Mining Co Ltd タンタル酸リチウム基板の製造方法
US20090020069A1 (en) * 2007-01-26 2009-01-22 Eugene Standifer Multi-Beam Optical Afterheater for Laser Heated Pedestal Growth
KR101196990B1 (ko) 2007-12-25 2012-11-05 가부시키가이샤 무라타 세이사쿠쇼 복합 압전 기판의 제조방법
JP6238478B2 (ja) * 2016-03-16 2017-11-29 信越化学工業株式会社 タンタル酸リチウム単結晶基板の製造方法
CN106521633B (zh) * 2016-12-26 2019-12-13 福建晶安光电有限公司 一种钽酸锂晶体基片的黑化处理方法
CN106868595B (zh) * 2017-02-15 2019-03-15 宁夏钜晶源晶体科技有限公司 大厚度黑色钽酸锂晶片的制造方法
JP7319592B2 (ja) * 2020-01-22 2023-08-02 住友金属鉱山株式会社 タンタル酸リチウム基板の製造方法
CN112028600A (zh) * 2020-09-14 2020-12-04 吉林大学 一种制备顺电相LiTaO3的方法
JP7271487B2 (ja) * 2020-09-28 2023-05-11 信越化学工業株式会社 タンタル酸リチウム単結晶基板の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS539279A (en) 1976-07-14 1978-01-27 Fujitsu Ltd Annealing method for metallic oxide single crystal
JPS573800A (en) * 1980-06-05 1982-01-09 Toshiba Corp Heat-treating method of single crystal
JPS579279A (en) * 1980-06-19 1982-01-18 Nissan Motor Co Ltd Motor controlling circuit for automotive
JPS6335499A (ja) * 1986-07-31 1988-02-16 Hitachi Metals Ltd リチウムタンタレ−ト単結晶の単一分域化方法
JPH0637350B2 (ja) * 1987-02-27 1994-05-18 日立金属株式会社 単分域タンタル酸リチウム単結晶の製造方法
JPH0637350A (ja) * 1992-07-15 1994-02-10 Nippon Telegr & Teleph Corp <Ntt> 光信号受信器
JP2818344B2 (ja) * 1992-12-25 1998-10-30 日本碍子株式会社 酸化物単結晶の製造方法及びその装置
EP0893515B1 (en) 1997-07-25 2003-11-26 Crystal Technology, Inc. Preconditioned crystals of lithium niobate and lithium tantalate and methods of preparing the same
US6319430B1 (en) * 1997-07-25 2001-11-20 Crystal Technology, Inc. Preconditioned crystals of lithium niobate and lithium tantalate and method of preparing the same
JPH11236298A (ja) 1997-12-05 1999-08-31 Crystal Technol Inc フォトリソグラフィー法に使用するための結晶および電磁線吸収能を増大させるための該結晶の前状態調節法
US6567598B1 (en) * 1998-05-11 2003-05-20 California Institute Of Technology Titanium-indiffusion waveguides
US6786967B1 (en) * 1998-05-11 2004-09-07 California Institute Of Technology Ion exchange waveguides and methods of fabrication
JP2004328712A (ja) 2003-01-16 2004-11-18 Sumitomo Metal Mining Co Ltd タンタル酸リチウム基板およびその製造方法
JP3938147B2 (ja) 2003-04-08 2007-06-27 住友金属鉱山株式会社 タンタル酸リチウム基板およびその製造方法
JP4071670B2 (ja) * 2003-04-17 2008-04-02 信越化学工業株式会社 単一分域化されたタンタル酸リチウム結晶の製造方法

Also Published As

Publication number Publication date
KR20060126925A (ko) 2006-12-11
KR101213411B1 (ko) 2012-12-18
TW200523408A (en) 2005-07-16
JP4063190B2 (ja) 2008-03-19
WO2005038099A1 (ja) 2005-04-28
US7442250B2 (en) 2008-10-28
CN100351436C (zh) 2007-11-28
CN1856599A (zh) 2006-11-01
JP2005119906A (ja) 2005-05-12
US20070006797A1 (en) 2007-01-11

Similar Documents

Publication Publication Date Title
AU153410S (en) Wristwatch
AU152718S (en) Wristwatch
SG106158A1 (en) Screw-on for timepiece
AU2003288210A1 (en) Process meter
GB2402941B (en) Method for manufacturing substrate
TWI346719B (en) Lithium niobate substrate and method of producing the same
AU2003284161A1 (en) Method for making multifunctional materials
TWI367965B (en) Methog for producing lithium tantalate substrate
AU2003297594A8 (en) Crystalline form
EP1614774A4 (en) PROCESS FOR PRODUCING A SINGLE CRYSTAL
EP1679392A4 (en) PROCESS FOR PRODUCING MONOCRYSTAL
GB0314149D0 (en) Novel amorphous forms
AU158133S (en) Watch
TW564994U (en) R-chip substrate strippulator
AU2003303300A1 (en) Clock dial
GB0410498D0 (en) Crystal
AU154468S (en) Watch
AU2003243143A1 (en) 2-methyl-thieno-benzodiazepine process
AU2003271967A1 (en) Rad51-brc repeat crystals
AU2004100366A4 (en) Lambellion Process
GB0206759D0 (en) Crystal optimisation technique
GB0228533D0 (en) Crystalline form
AU2003100554A4 (en) Crystal watercolours
GB0222479D0 (en) Crystal structure
IL154588A0 (en) Time-switch

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent