TWI366921B - Semiconductor photodetector - Google Patents
Semiconductor photodetectorInfo
- Publication number
- TWI366921B TWI366921B TW097133566A TW97133566A TWI366921B TW I366921 B TWI366921 B TW I366921B TW 097133566 A TW097133566 A TW 097133566A TW 97133566 A TW97133566 A TW 97133566A TW I366921 B TWI366921 B TW I366921B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor photodetector
- photodetector
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008117603A JP5003585B2 (ja) | 2008-04-28 | 2008-04-28 | 半導体受光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200945607A TW200945607A (en) | 2009-11-01 |
| TWI366921B true TWI366921B (en) | 2012-06-21 |
Family
ID=41214162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097133566A TWI366921B (en) | 2008-04-28 | 2008-09-02 | Semiconductor photodetector |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7741691B2 (zh) |
| JP (1) | JP5003585B2 (zh) |
| TW (1) | TWI366921B (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013183178A1 (ja) * | 2012-06-05 | 2013-12-12 | 浜松ホトニクス株式会社 | 光検出器 |
| DE112017007177T5 (de) | 2017-03-06 | 2019-12-05 | Sumitomo Electric Industries, Ltd. | Optisches modul |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01205573A (ja) * | 1988-02-12 | 1989-08-17 | Mitsubishi Electric Corp | 半導体受光素子 |
| JPH02106979A (ja) * | 1988-10-17 | 1990-04-19 | Mitsubishi Electric Corp | 波長分波型光検出器 |
| JPH02226776A (ja) * | 1989-02-28 | 1990-09-10 | Canon Inc | 波長選択光検出器 |
| JPH03152977A (ja) * | 1989-11-09 | 1991-06-28 | Nec Corp | 半導体受光素子 |
| JPH04116977A (ja) | 1990-09-07 | 1992-04-17 | Fujitsu Ltd | 半導体受光素子 |
| JPH04249382A (ja) * | 1991-02-05 | 1992-09-04 | Nec Corp | 半導体受光素子 |
| JPH04261072A (ja) * | 1991-02-14 | 1992-09-17 | Mitsubishi Electric Corp | 半導体受光素子 |
| JPH0653537A (ja) * | 1992-07-31 | 1994-02-25 | Japan Energy Corp | 半導体受光素子 |
| JPH07326820A (ja) * | 1994-05-30 | 1995-12-12 | Mitsubishi Electric Corp | 波長可変半導体レーザ装置 |
| JPH1012913A (ja) * | 1996-06-21 | 1998-01-16 | Mitsubishi Electric Corp | 半導体受光素子 |
| CA2307745A1 (en) * | 1999-07-15 | 2001-01-15 | Sumitomo Electric Industries, Ltd. | Photodiode |
| JP4331428B2 (ja) | 2001-12-13 | 2009-09-16 | 富士通株式会社 | サブバンド間遷移量子井戸型光検知装置 |
| US6894322B2 (en) * | 2002-02-11 | 2005-05-17 | Jds Uniphase Corporation | Back illuminated photodiodes |
| JP2004241533A (ja) | 2003-02-05 | 2004-08-26 | Nippon Sheet Glass Co Ltd | 半導体受光素子 |
| JP2005159002A (ja) * | 2003-11-26 | 2005-06-16 | Seiko Epson Corp | 受光素子、光モジュール、及び光伝送装置 |
| JP2006179573A (ja) * | 2004-12-21 | 2006-07-06 | Sumitomo Electric Ind Ltd | 半導体レーザ素子およびその製造方法 |
| JP2007184410A (ja) * | 2006-01-06 | 2007-07-19 | Sumitomo Electric Ind Ltd | 半導体受光素子およびその製造方法 |
-
2008
- 2008-04-28 JP JP2008117603A patent/JP5003585B2/ja active Active
- 2008-09-02 TW TW097133566A patent/TWI366921B/zh active
- 2008-09-05 US US12/204,910 patent/US7741691B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US7741691B2 (en) | 2010-06-22 |
| JP5003585B2 (ja) | 2012-08-15 |
| JP2009267251A (ja) | 2009-11-12 |
| TW200945607A (en) | 2009-11-01 |
| US20090267169A1 (en) | 2009-10-29 |
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