TWI366892B - Method for fabricating semiconductor device - Google Patents
Method for fabricating semiconductor deviceInfo
- Publication number
- TWI366892B TWI366892B TW096150496A TW96150496A TWI366892B TW I366892 B TWI366892 B TW I366892B TW 096150496 A TW096150496 A TW 096150496A TW 96150496 A TW96150496 A TW 96150496A TW I366892 B TWI366892 B TW I366892B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- fabricating semiconductor
- fabricating
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070063768A KR100865709B1 (ko) | 2007-06-27 | 2007-06-27 | 원통형 전하저장전극을 구비하는 캐패시터 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200901387A TW200901387A (en) | 2009-01-01 |
| TWI366892B true TWI366892B (en) | 2012-06-21 |
Family
ID=40161077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096150496A TWI366892B (en) | 2007-06-27 | 2007-12-27 | Method for fabricating semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8017491B2 (zh) |
| JP (1) | JP2009010318A (zh) |
| KR (1) | KR100865709B1 (zh) |
| CN (1) | CN101335242B (zh) |
| TW (1) | TWI366892B (zh) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100979243B1 (ko) | 2008-04-29 | 2010-08-31 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 제조방법 |
| KR20100092221A (ko) * | 2009-02-12 | 2010-08-20 | 삼성전자주식회사 | 실린더형 커패시터 하부 전극을 포함하는 반도체 메모리 소자 |
| TWI440190B (zh) * | 2009-09-11 | 2014-06-01 | Inotera Memories Inc | 堆疊式隨機動態存取記憶體之雙面電容之製造方法 |
| KR101616045B1 (ko) * | 2009-11-19 | 2016-04-28 | 삼성전자주식회사 | 반도체 소자 제조방법 |
| US8084323B2 (en) * | 2009-12-17 | 2011-12-27 | Nanya Technology Corporation | Stack capacitor of memory device and fabrication method thereof |
| JP2013153074A (ja) * | 2012-01-25 | 2013-08-08 | Fujifilm Corp | キャパシタ形成方法 |
| KR101895460B1 (ko) | 2012-03-23 | 2018-09-05 | 삼성전자주식회사 | 커패시터 구조물 및 이의 형성 방법 |
| KR101910499B1 (ko) | 2012-06-29 | 2018-10-23 | 에스케이하이닉스 주식회사 | 반도체 장치의 캐패시터 제조방법 |
| KR102037868B1 (ko) | 2013-03-05 | 2019-11-26 | 삼성전자주식회사 | 반도체 소자 및 그 제조방법 |
| USD747792S1 (en) | 2013-10-25 | 2016-01-19 | Fisher & Paykel Health Care Limited | Nasal cannula body |
| KR102514049B1 (ko) | 2016-07-21 | 2023-03-27 | 삼성전자주식회사 | 집적회로 소자의 제조 방법 |
| KR20220042442A (ko) | 2019-08-06 | 2022-04-05 | 램 리써치 코포레이션 | 실리콘-함유 막들의 열적 원자 층 증착 (thermal atomic layer deposition) |
| US12412742B2 (en) | 2020-07-28 | 2025-09-09 | Lam Research Corporation | Impurity reduction in silicon-containing films |
| CN113517291B (zh) * | 2021-04-19 | 2023-08-29 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
| JP2024524553A (ja) | 2021-07-09 | 2024-07-05 | ラム リサーチ コーポレーション | ケイ素含有膜のプラズマ強化原子層堆積 |
| WO2023028461A1 (en) * | 2021-08-24 | 2023-03-02 | Lam Research Corporation | In-situ core protection in multi-patterning |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004179497A (ja) * | 2002-11-28 | 2004-06-24 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
| JP2005032982A (ja) | 2003-07-14 | 2005-02-03 | Renesas Technology Corp | 半導体装置 |
| US7067385B2 (en) * | 2003-09-04 | 2006-06-27 | Micron Technology, Inc. | Support for vertically oriented capacitors during the formation of a semiconductor device |
| KR20050045608A (ko) * | 2003-11-12 | 2005-05-17 | 삼성전자주식회사 | 반도체 장치 제조방법. |
| KR100546395B1 (ko) * | 2003-11-17 | 2006-01-26 | 삼성전자주식회사 | 반도체소자의 커패시터 및 그 제조방법 |
| KR100568733B1 (ko) * | 2004-02-10 | 2006-04-07 | 삼성전자주식회사 | 개선된 구조적 안정성을 갖는 캐패시터와 그 제조 방법 및이를 포함하는 반도체 장치와 그 제조 방법 |
| KR100539268B1 (ko) * | 2004-06-24 | 2005-12-27 | 삼성전자주식회사 | 반도체 메모리 소자의 제조 방법 |
| KR100533978B1 (ko) * | 2004-06-30 | 2005-12-07 | 주식회사 하이닉스반도체 | 반도체 소자 제조 방법 |
| JP2006135261A (ja) * | 2004-11-09 | 2006-05-25 | Elpida Memory Inc | キャパシタの製造方法 |
| KR100596795B1 (ko) * | 2004-12-16 | 2006-07-05 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 및 그 형성방법 |
| KR100653713B1 (ko) * | 2005-02-21 | 2006-12-05 | 삼성전자주식회사 | 실린더형 스토리지 노드들을 갖는 반도체소자 및 그 제조방법들 |
| US7419913B2 (en) * | 2005-09-01 | 2008-09-02 | Micron Technology, Inc. | Methods of forming openings into dielectric material |
| KR100660880B1 (ko) * | 2005-10-12 | 2006-12-26 | 삼성전자주식회사 | 복수의 스토리지 노드 전극들을 구비하는 반도체 메모리소자의 제조 방법 |
| KR100799152B1 (ko) | 2006-10-02 | 2008-01-29 | 주식회사 하이닉스반도체 | 스토리지노드 쓰러짐을 방지한 실린더형 캐패시터의 제조방법 |
| JP2009141073A (ja) * | 2007-12-05 | 2009-06-25 | Elpida Memory Inc | 半導体装置の製造方法及び半導体装置 |
-
2007
- 2007-06-27 KR KR1020070063768A patent/KR100865709B1/ko not_active Expired - Fee Related
- 2007-12-27 US US11/965,698 patent/US8017491B2/en not_active Expired - Fee Related
- 2007-12-27 TW TW096150496A patent/TWI366892B/zh not_active IP Right Cessation
- 2007-12-27 JP JP2007337412A patent/JP2009010318A/ja active Pending
- 2007-12-28 CN CN2007103063445A patent/CN101335242B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101335242A (zh) | 2008-12-31 |
| KR100865709B1 (ko) | 2008-10-29 |
| JP2009010318A (ja) | 2009-01-15 |
| TW200901387A (en) | 2009-01-01 |
| US8017491B2 (en) | 2011-09-13 |
| US20090004808A1 (en) | 2009-01-01 |
| CN101335242B (zh) | 2011-09-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |