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TWI366235B - High switching speed two mask schottky diode with high field breakdown - Google Patents

High switching speed two mask schottky diode with high field breakdown

Info

Publication number
TWI366235B
TWI366235B TW096143158A TW96143158A TWI366235B TW I366235 B TWI366235 B TW I366235B TW 096143158 A TW096143158 A TW 096143158A TW 96143158 A TW96143158 A TW 96143158A TW I366235 B TWI366235 B TW I366235B
Authority
TW
Taiwan
Prior art keywords
mask
schottky diode
switching speed
field breakdown
high field
Prior art date
Application number
TW096143158A
Other languages
English (en)
Other versions
TW200921792A (en
Inventor
Shye Lin Wu
Original Assignee
Chip Integration Tech Co Ltd
Shye Lin Wu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chip Integration Tech Co Ltd, Shye Lin Wu filed Critical Chip Integration Tech Co Ltd
Priority to TW096143158A priority Critical patent/TWI366235B/zh
Publication of TW200921792A publication Critical patent/TW200921792A/zh
Application granted granted Critical
Publication of TWI366235B publication Critical patent/TWI366235B/zh

Links

TW096143158A 2007-11-14 2007-11-14 High switching speed two mask schottky diode with high field breakdown TWI366235B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW096143158A TWI366235B (en) 2007-11-14 2007-11-14 High switching speed two mask schottky diode with high field breakdown

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096143158A TWI366235B (en) 2007-11-14 2007-11-14 High switching speed two mask schottky diode with high field breakdown

Publications (2)

Publication Number Publication Date
TW200921792A TW200921792A (en) 2009-05-16
TWI366235B true TWI366235B (en) 2012-06-11

Family

ID=44727986

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096143158A TWI366235B (en) 2007-11-14 2007-11-14 High switching speed two mask schottky diode with high field breakdown

Country Status (1)

Country Link
TW (1) TWI366235B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8956963B2 (en) 2012-11-27 2015-02-17 Industrial Technology Research Institute Schottky barrier diode and fabricating method thereof

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009028248A1 (de) 2009-08-05 2011-02-10 Robert Bosch Gmbh Halbleiteranordnung
TWI455209B (zh) 2009-10-12 2014-10-01 節能元件股份有限公司 溝渠式金氧半ｐ－ｎ接面蕭基二極體結構及其製作方法
CN103887168B (zh) * 2012-12-19 2017-03-01 竹懋科技股份有限公司 萧特基整流元件的制造方法及形成方法
TWI514578B (zh) * 2013-06-21 2015-12-21 Chip Integration Tech Co Ltd 雙溝渠式整流器及其製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8956963B2 (en) 2012-11-27 2015-02-17 Industrial Technology Research Institute Schottky barrier diode and fabricating method thereof

Also Published As

Publication number Publication date
TW200921792A (en) 2009-05-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees