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TWI366268B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
TWI366268B
TWI366268B TW097130851A TW97130851A TWI366268B TW I366268 B TWI366268 B TW I366268B TW 097130851 A TW097130851 A TW 097130851A TW 97130851 A TW97130851 A TW 97130851A TW I366268 B TWI366268 B TW I366268B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
TW097130851A
Other languages
English (en)
Other versions
TW200910594A (en
Inventor
Jung Ho Ahn
Original Assignee
Dongbu Hitek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongbu Hitek Co Ltd filed Critical Dongbu Hitek Co Ltd
Publication of TW200910594A publication Critical patent/TW200910594A/zh
Application granted granted Critical
Publication of TWI366268B publication Critical patent/TWI366268B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
TW097130851A 2007-08-29 2008-08-13 Semiconductor device TWI366268B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070087001A KR100898474B1 (ko) 2007-08-29 2007-08-29 반도체 소자

Publications (2)

Publication Number Publication Date
TW200910594A TW200910594A (en) 2009-03-01
TWI366268B true TWI366268B (en) 2012-06-11

Family

ID=40406063

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097130851A TWI366268B (en) 2007-08-29 2008-08-13 Semiconductor device

Country Status (4)

Country Link
US (1) US7741683B2 (zh)
KR (1) KR100898474B1 (zh)
CN (1) CN101378079B (zh)
TW (1) TWI366268B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101764136B (zh) * 2009-12-24 2011-11-16 中国科学院上海微系统与信息技术研究所 一种可调节垂直栅soi cmos器件沟道电流的叉指型结构
KR20140131671A (ko) * 2013-05-06 2014-11-14 에스케이하이닉스 주식회사 병렬 구조의 가변 저항 소자
CN103633046B (zh) * 2013-12-13 2017-03-15 苏州能讯高能半导体有限公司 半导体器件及其制造方法
CN103900996B (zh) * 2014-03-19 2016-01-13 中国科学院南海海洋研究所 一种现场测量海上白冠覆盖率的测量方法及其测量装置
KR102520536B1 (ko) * 2016-03-30 2023-04-12 엘지이노텍 주식회사 반도체 소자, 이를 포함하는 표시패널, 표시장치, 통신장치
KR102539668B1 (ko) * 2016-06-30 2023-06-02 엘지이노텍 주식회사 반도체 소자, 이를 포함하는 표시패널, 표시장치, 통신장치
JP7155482B2 (ja) * 2018-09-13 2022-10-19 住友電工デバイス・イノベーション株式会社 半導体装置
US10629526B1 (en) * 2018-10-11 2020-04-21 Nxp Usa, Inc. Transistor with non-circular via connections in two orientations
US10847508B2 (en) * 2018-12-27 2020-11-24 Micron Technology, Inc. Apparatus with a current-gain layout

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0548093A (ja) * 1991-08-19 1993-02-26 Seiko Epson Corp 半導体装置
JPH05129604A (ja) * 1991-10-31 1993-05-25 Toshiba Corp 電界効果トランジスタ
JPH05251479A (ja) * 1991-11-27 1993-09-28 Nec Corp 高周波用電界効果トランジスタ
JP3712111B2 (ja) 2001-03-30 2005-11-02 ユーディナデバイス株式会社 電力増幅用半導体装置
US20040212017A1 (en) * 2001-08-07 2004-10-28 Hirotaka Mizuno Semiconductor device and ic card

Also Published As

Publication number Publication date
KR100898474B1 (ko) 2009-05-21
US20090057782A1 (en) 2009-03-05
KR20090022015A (ko) 2009-03-04
CN101378079A (zh) 2009-03-04
CN101378079B (zh) 2011-04-13
US7741683B2 (en) 2010-06-22
TW200910594A (en) 2009-03-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees