TWI365535B - Thin film transistor, method of fabricating the same, organic light emitting diode display device including the same and method of fabricating the same - Google Patents
Thin film transistor, method of fabricating the same, organic light emitting diode display device including the same and method of fabricating the sameInfo
- Publication number
- TWI365535B TWI365535B TW097121996A TW97121996A TWI365535B TW I365535 B TWI365535 B TW I365535B TW 097121996 A TW097121996 A TW 097121996A TW 97121996 A TW97121996 A TW 97121996A TW I365535 B TWI365535 B TW I365535B
- Authority
- TW
- Taiwan
- Prior art keywords
- same
- fabricating
- light emitting
- display device
- thin film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
- H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
- H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H10P14/3238—
-
- H10P14/3411—
-
- H10P14/3806—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070063680A KR100882909B1 (ko) | 2007-06-27 | 2007-06-27 | 박막트랜지스터, 그의 제조 방법, 이를 포함하는유기전계발광표시장치, 및 그의 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200901460A TW200901460A (en) | 2009-01-01 |
| TWI365535B true TWI365535B (en) | 2012-06-01 |
Family
ID=39791342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097121996A TWI365535B (en) | 2007-06-27 | 2008-06-12 | Thin film transistor, method of fabricating the same, organic light emitting diode display device including the same and method of fabricating the same |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8044401B2 (zh) |
| EP (1) | EP2009695A3 (zh) |
| JP (1) | JP5059703B2 (zh) |
| KR (1) | KR100882909B1 (zh) |
| CN (1) | CN101335302B (zh) |
| TW (1) | TWI365535B (zh) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8613671B2 (en) * | 2009-06-08 | 2013-12-24 | Cfph, Llc | Data transfer and control among multiple computer devices in a gaming environment |
| US8771078B2 (en) | 2009-06-08 | 2014-07-08 | Cfph, Llc | Amusement device including means for processing electronic data in play of a game of chance |
| US8545327B2 (en) * | 2009-06-08 | 2013-10-01 | Cfph, Llc | Amusement device including means for processing electronic data in play of a game in which an outcome is dependant upon card values |
| US8419535B2 (en) * | 2009-06-08 | 2013-04-16 | Cfph, Llc | Mobile playing card devices |
| US8287386B2 (en) * | 2009-06-08 | 2012-10-16 | Cfph, Llc | Electrical transmission among interconnected gaming systems |
| US8784189B2 (en) | 2009-06-08 | 2014-07-22 | Cfph, Llc | Interprocess communication regarding movement of game devices |
| US8545328B2 (en) * | 2009-06-08 | 2013-10-01 | Cfph, Llc | Portable electronic charge device for card devices |
| WO2011027656A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and display device |
| KR101082254B1 (ko) * | 2009-11-04 | 2011-11-09 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시 장치 및 그의 제조 방법 |
| KR101613701B1 (ko) * | 2009-12-25 | 2016-04-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치의 구동 방법 |
| KR101749944B1 (ko) * | 2009-12-28 | 2017-06-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 전자 기기 |
| CN104979369B (zh) | 2010-03-08 | 2018-04-06 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| KR101137391B1 (ko) * | 2010-03-24 | 2012-04-20 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터를 갖는 기판, 이를 제조하는 방법, 및 상기 박막 트랜지스터를 갖는 기판을 구비하는 유기 발광 표시 장치 |
| KR101041147B1 (ko) | 2010-04-07 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 박막 트랜지스터의 액티브층의 제조 방법 및 표시 장치 |
| KR101720533B1 (ko) * | 2010-08-31 | 2017-04-03 | 삼성디스플레이 주식회사 | 다결정 실리콘층의 제조 방법, 상기 다결정 실리콘층 제조 방법을 포함하는 박막 트랜지스터의 제조 방법, 상기 방법에 의해 제조된 박막 트랜지스터, 및 상기 박막 트랜지스터를 포함하는 유기 발광 디스플레이 장치 |
| KR101809661B1 (ko) * | 2011-06-03 | 2017-12-18 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 유기 발광 표시 장치 |
| TWI453835B (zh) | 2012-01-11 | 2014-09-21 | Chunghwa Picture Tubes Ltd | 畫素結構及其製作方法 |
| US9601557B2 (en) * | 2012-11-16 | 2017-03-21 | Apple Inc. | Flexible display |
| US10271518B2 (en) * | 2014-01-17 | 2019-04-30 | John S Greeson | Sensing mat for an animal treatment system |
| US20150209654A1 (en) | 2013-11-12 | 2015-07-30 | Deq Systems Corp. | Reconfigurable playing cards and game display devices |
| US9600112B2 (en) | 2014-10-10 | 2017-03-21 | Apple Inc. | Signal trace patterns for flexible substrates |
| KR102708773B1 (ko) | 2016-12-26 | 2024-09-23 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW264575B (zh) * | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
| JP3980298B2 (ja) | 1993-11-12 | 2007-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6162667A (en) * | 1994-03-28 | 2000-12-19 | Sharp Kabushiki Kaisha | Method for fabricating thin film transistors |
| TW280943B (zh) * | 1994-07-15 | 1996-07-11 | Sharp Kk | |
| JP3645380B2 (ja) * | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置 |
| JP3472024B2 (ja) * | 1996-02-26 | 2003-12-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JPH10228248A (ja) * | 1996-12-09 | 1998-08-25 | Semiconductor Energy Lab Co Ltd | アクティブマトリクス表示装置およびその作製方法 |
| JPH10198292A (ja) * | 1996-12-30 | 1998-07-31 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP3939399B2 (ja) * | 1997-07-22 | 2007-07-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6346437B1 (en) * | 1998-07-16 | 2002-02-12 | Sharp Laboratories Of America, Inc. | Single crystal TFT from continuous transition metal delivery method |
| US7084016B1 (en) * | 1998-07-17 | 2006-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
| US6858480B2 (en) * | 2001-01-18 | 2005-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| JP4176362B2 (ja) * | 2001-03-16 | 2008-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7052943B2 (en) * | 2001-03-16 | 2006-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| JP3608613B2 (ja) * | 2001-03-28 | 2005-01-12 | 株式会社日立製作所 | 表示装置 |
| KR100425156B1 (ko) | 2001-05-25 | 2004-03-30 | 엘지.필립스 엘시디 주식회사 | 다결정화 방법과 이를 이용한 액정표시장치 제조방법 |
| JP2003100633A (ja) | 2001-09-25 | 2003-04-04 | Sharp Corp | 半導体装置の製造方法および半導体装置 |
| KR200290429Y1 (ko) | 2002-06-14 | 2002-09-27 | 손영미 | 휴대용 칫솔 |
| JP2004104110A (ja) | 2002-08-22 | 2004-04-02 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ及びその作製方法 |
| CN100449779C (zh) | 2002-10-07 | 2009-01-07 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| JP2003197529A (ja) * | 2002-12-13 | 2003-07-11 | Sharp Corp | 半導体装置 |
| KR100579179B1 (ko) | 2004-06-09 | 2006-05-11 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그 제조 방법 |
| KR100666564B1 (ko) * | 2004-08-04 | 2007-01-09 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조 방법 |
| KR100611766B1 (ko) * | 2004-08-24 | 2006-08-10 | 삼성에스디아이 주식회사 | 박막트랜지스터 제조 방법 |
| KR100659758B1 (ko) | 2004-09-22 | 2006-12-19 | 삼성에스디아이 주식회사 | 박막트랜지스터 제조 방법 |
| US7683373B2 (en) * | 2004-10-05 | 2010-03-23 | Samsung Mobile Display Co., Ltd. | Thin film transistor and method of fabricating the same |
-
2007
- 2007-06-27 KR KR1020070063680A patent/KR100882909B1/ko not_active Expired - Fee Related
-
2008
- 2008-06-12 TW TW097121996A patent/TWI365535B/zh active
- 2008-06-27 EP EP08252217A patent/EP2009695A3/en not_active Ceased
- 2008-06-27 US US12/163,074 patent/US8044401B2/en active Active
- 2008-06-27 JP JP2008169193A patent/JP5059703B2/ja active Active
- 2008-06-27 CN CN200810131753.0A patent/CN101335302B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR100882909B1 (ko) | 2009-02-10 |
| JP5059703B2 (ja) | 2012-10-31 |
| TW200901460A (en) | 2009-01-01 |
| CN101335302A (zh) | 2008-12-31 |
| US8044401B2 (en) | 2011-10-25 |
| CN101335302B (zh) | 2012-08-29 |
| JP2009010391A (ja) | 2009-01-15 |
| US20090001380A1 (en) | 2009-01-01 |
| KR20080114281A (ko) | 2008-12-31 |
| EP2009695A2 (en) | 2008-12-31 |
| EP2009695A3 (en) | 2010-06-30 |
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