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TWI365355B - Antireflective hardmask composition - Google Patents

Antireflective hardmask composition

Info

Publication number
TWI365355B
TWI365355B TW096119117A TW96119117A TWI365355B TW I365355 B TWI365355 B TW I365355B TW 096119117 A TW096119117 A TW 096119117A TW 96119117 A TW96119117 A TW 96119117A TW I365355 B TWI365355 B TW I365355B
Authority
TW
Taiwan
Prior art keywords
hardmask composition
antireflective hardmask
antireflective
composition
hardmask
Prior art date
Application number
TW096119117A
Other languages
Chinese (zh)
Other versions
TW200809413A (en
Inventor
Chang Il Oh
Dong Seon Uh
Jin Kuk Lee
Jong Seob Kim
Min Soo Kim
Sang Hak Lim
Sang Kyun Kim
Hui Chan Yun
Kyung Hee Hyung
Irina Nam
Original Assignee
Cheil Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020060048430A external-priority patent/KR100826103B1/en
Priority claimed from KR1020060120724A external-priority patent/KR100833212B1/en
Application filed by Cheil Ind Inc filed Critical Cheil Ind Inc
Publication of TW200809413A publication Critical patent/TW200809413A/en
Application granted granted Critical
Publication of TWI365355B publication Critical patent/TWI365355B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW096119117A 2006-05-30 2007-05-29 Antireflective hardmask composition TWI365355B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060048430A KR100826103B1 (en) 2006-05-30 2006-05-30 Antireflective Hardmask Composition
KR1020060120724A KR100833212B1 (en) 2006-12-01 2006-12-01 Antireflective Hardmask Composition

Publications (2)

Publication Number Publication Date
TW200809413A TW200809413A (en) 2008-02-16
TWI365355B true TWI365355B (en) 2012-06-01

Family

ID=38778771

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096119117A TWI365355B (en) 2006-05-30 2007-05-29 Antireflective hardmask composition

Country Status (2)

Country Link
TW (1) TWI365355B (en)
WO (1) WO2007139268A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100908601B1 (en) * 2007-06-05 2009-07-21 제일모직주식회사 Anti-reflective hard mask composition and patterning method of substrate material using same
KR101344794B1 (en) 2009-12-31 2014-01-16 제일모직주식회사 Aromatic ring-containing polymer for resist　underlayer　and　resist underlayer composition　including　same
KR101344792B1 (en) 2010-12-17 2013-12-24 제일모직주식회사 Hardmask composition and method of forming patterns and semiconductor integrated circuit device including the patterns
KR102539857B1 (en) * 2016-04-29 2023-06-07 동우 화인켐 주식회사 Composition for hard mask
CN116088270B (en) * 2023-01-20 2025-12-12 中国科学院光电技术研究所 Photoresist composition, pattern formation method for near-field surface imaging, and deposition equipment
CN117872680B (en) * 2024-03-11 2024-05-10 中节能万润股份有限公司 Polymer for photoresist bottom anti-reflection coating, preparation method and application

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60105523T2 (en) * 2000-11-14 2005-09-29 Jsr Corp. Anti-reflective coating composition
TWI317365B (en) * 2002-07-31 2009-11-21 Jsr Corp Acenaphthylene derivative, polymer, and antireflection film-forming composition
KR100512171B1 (en) * 2003-01-24 2005-09-02 삼성전자주식회사 Compositon for a bottom layer resist
JP2005196067A (en) * 2004-01-09 2005-07-21 Toyo Ink Mfg Co Ltd Antireflection film

Also Published As

Publication number Publication date
WO2007139268A1 (en) 2007-12-06
TW200809413A (en) 2008-02-16

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