1364794 UMCD-200B-0098 28349twf.doc/n1364794 UMCD-200B-0098 28349twf.doc/n
九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種緩衝裝置與薄膜沈積(thin film deposition)系統，且特別是有關於一種可以減少液態材料 所產生的氣泡的緩衝裝置與薄膜沈積系統。 【先前技術】IX. INSTRUCTIONS OF THE INVENTION: TECHNICAL FIELD The present invention relates to a buffer device and a thin film deposition system, and more particularly to a buffer device and film deposition capable of reducing bubbles generated by a liquid material. system. [Prior Art]
在目前的半導體製程甲，薄膜沈積技術是廣泛應月 f不可或缺的技術。—般來說，在進行薄膜沈積製程戈 月，會先將位於遠端的液態材料利用承載氣體(ca出 置(例如安瓶(―))中，然後再將緩衝屬 傳送至沈積機台中來進行沈積。當缓種 裝置中的液‘讀料耗盡時，位於遠 利用承載氣體運送至緩衝裝置中。 叶扪再-ΛIn the current semiconductor process, thin film deposition technology is an indispensable technology. In general, in the film deposition process, the moon will first use the carrier material (such as ampoules) in the liquid material at the far end, and then transfer the buffer to the deposition machine. Deposition is carried out. When the liquid 'reading material in the slow-dissolving device is exhausted, it is located in the far-use carrier gas and transported to the buffer device.
然而’當位於遠韻液態材料 時:往往因為液態材料進入緩衝裝置的流速過 被傳送至沈積機减會隨著液態材料 進而對後續的製程產生膜沈積厚料均的問題， 題，=3::造，薄膜沈積厚度不均的問 (undercoat)、予員2成所需的膜層之前，先進行底塗 deP〇sit_，以及空白沈積 泡的數丄，=氣泡=材料。然而，由於^ 量降低，顺致產 UMCD-2008-0098 28349twfdoc/n 【發明内容】 有鑑於此’本發明的目的就是在提供—種緩衝裝 置，其可以減少液態材料所產生的氣泡。 本發明的另-目的就是在提供—種薄膜沈積系統， 其可以降低生產成本以及提高產量。 本發明提出-種緩衝裝置，其連接於液紐料供應 裝置與沈積機台之間。此缓衝裝置包括容器以及 容器用於容納液態材料供應裳置所供應的液態材^且 此令器的頂部具有輸入孔與輪出礼。揞板配査於容器 中，且位於輸入孔下方。 依照本發明實施例所述之緩衝裝置，上述之擋板例 如具有至少一個孔洞，且孔洞不位於輸入孔下方。 依照本發明實施例所述之緩衝裝置，上述之擋板的 材料例如與容器的材料相同。 依照本發明實施例所述之緩衝裝置，上述之液態材 料例如為低介電常數材料、四二甲基胺鈦 (tetrakis(dimethylamido) titanium，TDMAT)、四乙氧基石夕 燒（tetraethylorthosilicate，TEOS )或四甲基環石夕氧炊 (tetramethylcyclotetrasiloxane > TMCATS) ° 本發明另提出一種薄膜沈積系統，其包括沈積機 台、液態材料供應裝置以及缓衝裝置。液態材料供應裝 置用以供應液態材料。缓衝裝置連接於液態材料供應裝 置與沈積機台之間。此緩衝裝置包括容器以及擋板。容 器用於容納液態材料’且此容器的頂部具有輸入孔與輪 出孔。擋板配置於容器中，且位於輸入孔下方。 UMCD-2008-0098 28349twf.d〇c/n 依A?、本發明實施例所述之薄膜沈積系統，上述之擋 板例如具有至少一個孔洞，孔洞不位於輸入孔下方。 依照本發明實施例所述之薄膜沈積系統，上述之撞 板的材料例如與容器的材料相同。 依照本發明實施例所述之薄膜沈積系統，上述之液 悲材料例如為低介電常數材料、四二曱基胺鈦、四乙氧 基矽烷或四甲基環矽氧烷。 依照本發明實施例所述之薄膜沈積系統，還可以具 有連接輸入孔與液態材料供應裝置的輸入管。. 依照本發明實施例所述之薄膜沈積系統，還可以具 有連接輸出孔與沈積機台的輸出管，且此輸出管穿過輸 出孔而延伸至容器中的液態材料的液面下。 —依照本發明實施例所述之薄膜沈積系統，上述之輸 出管例如延伸至鄰近容器的底部。 ，發明於緩衝裝置的容器的輪入孔下方配置擋板， 因此當具有高流速的液態材料通過輸入孔注入容器時， 可以改^ _材料的流動方向並同時降低液態材料的流 速以減少因液態材料直接向下衝擊而產生的氣泡。此 夕卜，，，中的氣泡數量減少，使得傳送至沈積機台 的氣泡數里也隨之減少’ @此可以減少液態材料的消 降，了生產成本，以及提高薄膜沈積製程的產量。 韶旦讓本發日月之上述和其他目的、特徵和優點能更明 明如^。’下文特舉實施例’並配合所附圖式，作詳細說 UMCD-200S-009S 28349twf.doc/n 【實施方式】 圖1為依照本發明實施例崎示的薄膜沈積系統之 示意圖。圖2為圖1中的緩衝裝置之剖面示意圖。 時參照圖1與圖2’薄膜沈積系統⑽包括沈積機台^ 液態材料供應裝置104以及緩衝裝置刚。液態材料供鹿 裝置104用以供應液態材料1〇8。液態材料1〇8可作為進 行液相沈積製程時所沈積的薄膜的材料，或者可作為進 行氣相沈積製程時所沈積的薄膜的前驅物(precurs〇十也 就是說，沈積機台102可以視需求而為各種熟知的薄膜 沈積機台。液態材料108例如為低介電常數材料、四二 曱基胺鈦、四乙氧基魏或四曱基環魏烧。緩衝裝置 106連接於液態材料供應裝置104與沈積機台1〇2之間。 緩衝裝置106包括容器110以及擋板112。容器ιι〇用於 容納液態材料108,且容器n〇的頂部具有輸入孔114與 輸出孔116。擋板112配置於容器11〇中，且位於輸入孔 114下方。此外’薄膜沈積系統⑽還具有連接輸入孔 U4與液態材料供應裝置的輸入管118，以及連接輸出孔 H6與沈積機台1〇2的輪出管12〇，且輪出管12〇穿過輸 出孔116而延伸至容器11〇中的液態材料1〇8的液面下。 在本貝施例中，輸出管120例如是延伸至鄰近容器 的底部。 ㊉詳細地說，在目前的半導體廠令，進行沈積製程所 ，的材料皆是位於遠端的材料供應裝置中，並藉由承載 /氣體將材料歧送至緩衝裝置，再運紅沈積機台來進 仃沈積製程。因此，在本實施例中，液態材料供應裝置 UMCD-2008-0098 28349twf.doc/n 104中的液態材料108先經由輸入管ία通過輸入孔H4 運送至緩衝裝置106的容器11〇中，再經由輸出管120 通過輸出孔116運送至沈積機台1〇2。一般來說，液態材 料供應裝置104的容量例如是16 L，而緩衝裝置110的 容量例如是1.2 L。當由液態材料供應裝置104供應的液 態材料108注滿缓衝裝置no時，液態材料供應裝置1〇4 停止供應的液態材料108,然後再由緩衝裝置no將液態 材料108傳送至沈積機台1〇2,直到缓衝裝置11()中的液 態材料108耗盡之後’再次由液態材料供應裝置1〇4供 應液態材料108至缓衝裂置11〇。 由於液態材料供應裝置104與緩衝裝置11〇的距離 相當遠，因此用來運送液態材料1〇8的承載氣體必須具 有足夠的壓力才可將液態材料1〇8運送至缓衝裝置11〇。 此壓力例如是45 psi至50 psi。由於上述的壓力會造成液 態材料108具有相當高的流速，因此配置於容器11()中 且位於輸入孔114下方的擋板112可以阻擂具有高流速 的液態材料108直接向下衝擊(如圖2中的箭號所示’箭 號代表液態材料108的流動方向），以改變液態材料1〇8 的流動方向並同時降低液態材料1〇8的流速，因而可以 減少液態材料108直接向下衝擊而產生的氣泡’進而減 少隨著液態材料108傳送至沈積機台中的氣泡。擋板112 的材料例如與容器110的材料相同，以避免液態材料1〇8 與擋板112產生不必要的反應。 圖3為依照本發明另一實施例所繪示的緩衝裝置之 剖面示意圖。請參照圖3，在本實施例中，擋板還可以具 1364794 UMCD-2008-0098 28349twf.doc/n 有至少一個孔洞122,以避免液態材料1〇8因黏性過高而 無法順利流下。特別一提的是，孔洞122不可位於輸入 孔114下方，否則擋板112將無法產生阻擋具有高流速 的液態材料108的功效。也就是說，孔洞122可以視實 際需求而位於擋板112的任一位置，只要不位於輸入孔 114下方即可，且可以具有任意的形狀以及孔徑尺寸。 以下將以表一來說明本發明之功效。 表一 不具有擋板 底塗時間 —ί^)__ 240 預塗時間 (秒） 120 空白沈積 欠數(次） 8 ' 液悲材料 用量(％) 100.00 具有擋板 80 60 1 56.50 由表一可以得知’當容器110中不具有擋板112時， 所需的底塗時間與預塗時間分別為240秒與120秒，且 需進行8次的空白沈積，才可消耗含有氣泡的液態材料 108以進行所需的薄膜沈積製程。當容器110中具有擋板 112時’由於傳送至沈積機台1〇2的氣泡數量大幅減少， 因此底塗時間與預塗時間皆可縮短’且空白沈積的次數 亦可減少’進而減少了液態材料108的消耗而降低了生 產成本’且使得薄膜沈積製程的產量在固定時間内大幅 地提高。 綜上所述’本發明將擋板配置於緩衝裝置的容器的 輸入孔下方’當具有高流速的液態材料通過輸入孔注入 10 1364794 . UMCD-2008-0098 28349twf.doc/n L· • 容器時，檔板可以改變液態材料的流動方向以及降低液 態材料的流速，因此避免了液態材料直接向下衝擊而產 生過多氣泡的問題。 此外，由於本發明的缓衝裝置減少了因液態材料直 • 接向下衝擊所產生的氣泡，因此隨著液態材料被傳送至 ' 沈積機台中的氣泡也因而減少，進而減少了液態材料的 使用量’達到了降低生產成本的效果，且提高了薄膜沈 積製程的產量。 • 雖然本發明已以實施例揭露如上，然其並非用以限 定本發明’任何熟習此技藝者，在不脫離本發明之精神 和範圍内’當可作些許之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者為準。 μ 【圖式簡單說明】 一 圖1為依照本發明實施例所繪示的薄臈沈積系統之 示意圖。 "' ' • 圖2為依照本發明一實施例所繪示的緩衝裴置之However, when it is located in the liquid material of the far rhyme: often because the flow rate of the liquid material into the buffer device is transmitted to the deposition machine, the problem of the deposition of the thick material with the liquid material and the subsequent process will be solved. : Build, undercoat, and the desired layer of film, before applying the desired layer of deP〇sit_, and the number of blank deposition bubbles, = bubble = material. However, since the amount is lowered, SUMCD-2008-0098 28349 twfdoc/n [Invention] It is an object of the present invention to provide a buffer device which can reduce bubbles generated by a liquid material. Another object of the present invention is to provide a thin film deposition system that can reduce production costs and increase throughput. The present invention proposes a cushioning device that is coupled between a liquid feed supply device and a deposition machine. The cushioning device includes a container and a container for containing a liquid material supply liquid material supplied by the skirting device, and the top of the device has an input hole and a wheel. The seesaw is placed in the container and is located below the input hole. According to the cushioning device of the embodiment of the invention, the baffle plate has, for example, at least one hole, and the hole is not located below the input hole. According to the cushioning device of the embodiment of the invention, the material of the baffle plate is, for example, the same as that of the container. According to the buffer device of the embodiment of the present invention, the liquid material is, for example, a low dielectric constant material, tetrakis (dimethylamido titanium), TDMAT, tetraethylorthosilicate (TEOS). Or tetramethylcyclotetrasiloxane > TMCATS ° The present invention further provides a thin film deposition system comprising a deposition machine, a liquid material supply device, and a buffer device. A liquid material supply device is used to supply the liquid material. The buffer device is connected between the liquid material supply device and the deposition machine. The cushioning device includes a container and a baffle. The container is used to hold the liquid material ' and the top of the container has an input hole and a wheel hole. The baffle is disposed in the container and below the input aperture. UMCD-2008-0098 28349 twf.d〇c/n According to A?, a thin film deposition system according to an embodiment of the invention, wherein the baffle has, for example, at least one hole, and the hole is not located below the input hole. According to the thin film deposition system of the embodiment of the invention, the material of the above-mentioned striker is, for example, the same as that of the container. According to the thin film deposition system of the embodiment of the present invention, the above-mentioned liquid stagnation material is, for example, a low dielectric constant material, tetradecylamine titanium, tetraethoxydecane or tetramethylcyclodecane. The thin film deposition system according to an embodiment of the present invention may further have an input tube connecting the input hole and the liquid material supply device. The thin film deposition system according to the embodiment of the present invention may further have an output pipe connecting the output hole and the deposition machine, and the output pipe extends through the output hole to the liquid surface of the liquid material in the container. - A thin film deposition system according to an embodiment of the invention, wherein the output tube extends, for example, to the bottom of the adjacent container. The baffle is disposed under the wheel entry hole of the container of the buffer device, so that when a liquid material having a high flow rate is injected into the container through the input hole, the flow direction of the material can be changed and the flow rate of the liquid material can be reduced to reduce the liquid state. The bubbles generated by the material directly impacting downward. In addition, the number of bubbles in the chamber is reduced, so that the number of bubbles transferred to the deposition machine is also reduced. This reduces the reduction of liquid materials, the production cost, and the yield of the thin film deposition process. The above and other purposes, features and advantages of the Sun and Moon will be made clearer. DETAILED DESCRIPTION OF THE INVENTION UMCD-200S-009S 28349 twf.doc/n [Embodiment] FIG. 1 is a schematic view of a thin film deposition system according to an embodiment of the present invention. 2 is a schematic cross-sectional view of the cushioning device of FIG. 1. Referring to Figures 1 and 2', the thin film deposition system (10) includes a deposition machine, a liquid material supply device 104, and a buffer device. The liquid material is supplied to the deer device 104 for supplying the liquid material 1〇8. The liquid material 1〇8 can be used as a material for a film deposited during a liquid deposition process, or as a precursor of a film deposited during a vapor deposition process (precurs), that is, the deposition machine 102 can be viewed as There is a need for various well-known thin film deposition machines. The liquid material 108 is, for example, a low dielectric constant material, tetradecylamine titanium, tetraethoxy Wei or tetradecylcyclo Wei. The buffer device 106 is connected to a liquid material supply. The device 104 is interposed between the deposition machine 1 and 2. The buffer device 106 includes a container 110 and a baffle 112. The container ιι is for accommodating the liquid material 108, and the top of the container n has an input hole 114 and an output hole 116. 112 is disposed in the container 11〇 and located below the input hole 114. Further, the thin film deposition system (10) further has an input pipe 118 connecting the input hole U4 and the liquid material supply device, and connecting the output hole H6 and the deposition machine 1〇2 The tube 12 is turned out, and the wheel tube 12 is passed through the output hole 116 to extend below the liquid level of the liquid material 1 〇 8 in the container 11 。. In the present embodiment, the output tube 120 extends, for example, to the vicinity. Bottom of the container In detail, in the current semiconductor factory, the materials used in the deposition process are located in the material supply device at the far end, and the material is sent to the buffer device by the carrier/gas, and the red deposition is carried out. The machine is used to carry out the deposition process. Therefore, in the present embodiment, the liquid material 108 in the liquid material supply device UMCD-2008-0098 28349 twf.doc/n 104 is first transported to the buffer device 106 through the input port H4 via the input pipe ία. The container 11 is transported through the output tube 120 to the deposition machine 1 2 via the output tube 120. In general, the capacity of the liquid material supply device 104 is, for example, 16 L, and the capacity of the buffer device 110 is, for example, 1.2 L. When the liquid material 108 supplied from the liquid material supply device 104 is filled with the buffer device no, the liquid material supply device 1〇4 stops the supply of the liquid material 108, and then the liquid material 108 is transferred to the deposition machine by the buffer device no. 1〇2, until the liquid material 108 in the buffer device 11() is depleted, 'the liquid material 108 is again supplied from the liquid material supply device 1〇4 to the buffer crack 11〇. The distance from the buffer device 11 is quite far, so the carrier gas used to transport the liquid material 1 〇 8 must have sufficient pressure to transport the liquid material 1 〇 8 to the buffer device 11 此. This pressure is, for example, 45 psi. Up to 50 psi. Since the above pressure causes the liquid material 108 to have a relatively high flow rate, the baffle 112 disposed in the container 11() and below the input aperture 114 can block the liquid material 108 having a high flow rate directly downward. Impact (the arrow indicates the flow direction of the liquid material 108 as shown by the arrow in Fig. 2) to change the flow direction of the liquid material 1〇8 and simultaneously reduce the flow rate of the liquid material 1〇8, thereby reducing the liquid material 108. The bubbles created by the direct downward impact 'in turn reduce the bubbles that are transported into the deposition station as the liquid material 108 passes. The material of the baffle 112 is, for example, the same as that of the container 110 to prevent the liquid material 1〇8 from unnecessarily reacting with the baffle 112. 3 is a cross-sectional view of a cushioning device in accordance with another embodiment of the present invention. Referring to FIG. 3, in the present embodiment, the baffle may have at least one hole 122 in 1364794 UMCD-2008-0098 28349 twf.doc/n to prevent the liquid material 1〇8 from being too viscous to flow smoothly. In particular, the aperture 122 may not be located below the input aperture 114, otherwise the baffle 112 will not be able to create the effect of blocking the liquid material 108 having a high flow rate. That is, the hole 122 can be located at any position of the baffle 112 depending on actual needs, as long as it is not under the input hole 114, and can have any shape and aperture size. The effects of the present invention will be described below with reference to Table 1. Table 1 does not have baffle primer time — ί^) __ 240 precoat time (seconds) 120 blank deposition less (times) 8 ' liquid sorrow material usage (%) 100.00 with baffle 80 60 1 56.50 from Table 1 can It is known that when the container 110 does not have the baffle 112, the required primer time and precoat time are 240 seconds and 120 seconds, respectively, and 8 blank depositions are required to consume the liquid material 108 containing bubbles. To perform the desired thin film deposition process. When the container 110 has the baffle 112, 'the number of bubbles transferred to the deposition machine 1〇2 is greatly reduced, so the primer time and the precoating time can be shortened' and the number of blank depositions can be reduced', thereby reducing the liquid state. The consumption of material 108 reduces production costs' and allows the yield of the thin film deposition process to be substantially increased over a fixed period of time. In summary, the present invention configures the baffle below the input aperture of the container of the buffer device. When a liquid material having a high flow rate is injected through the input hole 10 1364794. UMCD-2008-0098 28349twf.doc/n L· • The baffle can change the flow direction of the liquid material and reduce the flow rate of the liquid material, thereby avoiding the problem that the liquid material directly impacts downward and generates excessive bubbles. In addition, since the cushioning device of the present invention reduces the bubbles generated by the downward impact of the liquid material, the bubble is reduced as the liquid material is transferred to the 'deposition machine', thereby reducing the use of the liquid material. The amount 'achieves the effect of reducing production costs and increases the yield of the thin film deposition process. The present invention has been disclosed in the above embodiments, but it is not intended to limit the invention to those skilled in the art, and the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application attached. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view of a thin tantalum deposition system according to an embodiment of the invention. "' ' • Figure 2 is a buffer device according to an embodiment of the invention
面示意圖。 、 ，J 圖3為依照本發明另一實施例所繪示的緩衝裝置 剖面示意圖。 【主要元件符號說明】 100 :薄膜沈積系統 102 :沈積機台 104 :液態材料供應裝置Schematic diagram. 3 is a schematic cross-sectional view of a buffer device according to another embodiment of the present invention. [Main component symbol description] 100: Thin film deposition system 102: Deposition machine 104: Liquid material supply device
11 1364794 UMCD-2008-0098 28349twf.doc/n 106 :緩衝裝置 108 :液態材料 110 :容器 112 :擋板 114 :輸入孔 116 :輸出孔 118 :輸入管 120 :輸出管 122 :孔洞11 1364794 UMCD-2008-0098 28349twf.doc/n 106 : Buffer device 108 : Liquid material 110 : Container 112 : Baffle 114 : Input hole 116 : Output hole 118 : Input tube 120 : Output tube 122 : Hole