1362729 九、發明說明： - 【發明所屬之技術領域】 本發明涉及一種半導體元件與熱管之接合方法。 【先前技術】 先前半導體元件之散熱一般使用熱管（Heat pipe)及散 熱片（Heat sink)等傳熱效率高之元件將其於工作時產生之 熱量快速散除，以避免大量之熱累積而導致其工作效率降 低，具體可參見Vladimir G. Pastukhov等人於文獻2006 IEEE，22nd IEEE SEMI-THERM Symposium 中之 Low-noise cooling system for pc on the base of l〇〇p heat pipes —文。 請參見圖1，先前技術中之熱管l〇 一般由熱管殼體 11、毛細結構層12及工作流體（圖未示）組成，其工作原理 為.熱官之蒸發端13之工作流體吸取熱量後變成氣態，氣 態之工作流體到達冷凝端14時釋放所吸收之熱量並轉變成 液態，再經由毛細結構層12流回蒸發端13。一般於埶管之 冷凝端連接有散熱片’散熱片與空氣大面積接觸可將 熱管冷凝端14釋放之熱量散發到空氣中，達到散埶之目的。 半導體元件與熱管之接合方式有間接接合和直接接合 兩種方式。其中，間接接合方式是將半導體元件安裝於印 上：織：印製電路板(pcb)與熱㈣ 熱量經由印製電路板間接 熱管’再由熱管散發出去。由於印製電路板包含有 '、邑、，彖層，而絕緣層之熱傳導率很低’因此導致整统之 散熱效率也不高。直接接合方式是將半導體元件純管 6 1362729 接接合，半導體元件於工作過程中產生之熱量直接傳遞至 熱管後再通過熱管散發出去；其與間接接合方式相比，其 散熱效率要高很多，因此半導體元件與熱管接合時大多採 用直接接合方式。 然而，先前之半導體元件與熱管之直接接合一般是將 製備完成之，也即已經具有毛細結構和工作流體之封閉之 熱管與半導體元件通過散熱膠（如銀膠）或者熱傳導率較高 之金屬（如錫）接合。由於散熱膠之熱傳導率不高，並且於工 作過程中容易受溫度之影響而變質、脆化或脫落，因此常 採用表面黏著（Surface Mount Technology，SMT)工藝利用熔 化之錫來接合半導體元件與熱管，然而熔化之錫之溫度通 常於280°C左右，而一般熱管之工作流體為水，水蒸汽於 200 C時之飽和氣壓為15倍大氣壓，當溫度達28〇它時，工 作流體之飽和氣壓將超過了熱管之承受能力，易於導致熱 管彎曲變形或爆炸等現象。 ” 【發明内容】 針對上述先前技術之缺陷，本發明提供一種半導體元 件與熱官之接合方法，該接合方法包括步驟：提供一熱管 殼體，該熱管殼體具有至少一個開口端；於熱管殼體内'壁 形成-個毛細結構層ϋ半導體元件與形成有該毛細 結構層之該熱管殼體以金屬固接接合；向與半導體元件接 合後之熱官殼體内注入工作流體並排除熱管殼體内之氣 體；密封熱管殼體之該至少一個開口端。 與先前技術相比，該半導體元件與熱管之接合方法 7 1362729 令，半導體元件與熱管殼體接合時，熱管殼體之内部 工作流體’待二者接合後，再向熱管殼體注人I作流體， 2此能夠避免於焊接過程中產生之大量之熱 體^匕而氣壓過高，超過熱管之承受能力而導致封閉之: =出現¥曲變形或爆炸等現象，從而可有效保護熱管。… 【實施方式】 參見圖2,本發明實施例提供之一種半導體元件與 之接合方法，其包括以下步驟： (1) 步驟201 :提供一個熱管殼體，該熱管殼體 >'-個開π端。該熱管殼體為—中空管狀結構，其可 筒形。該熱管殼體可由熱傳導率較高之金屬，如銅、銀、 銘、金，或金屬合金等材料製成。 (2) 步驟202:於熱管殼體内壁形成一個毛細 具體之，將毛細結構物質填充于該熱管殼體内壁了並^ 加熱燒結等方式將該毛細結構物f固定於該熱管殼體1362729 IX. Description of the Invention: - Technical Field of the Invention The present invention relates to a method of joining a semiconductor element and a heat pipe. [Prior Art] The heat dissipation of the previous semiconductor components is generally performed by using heat-transfer-efficient components such as a heat pipe and a heat sink to quickly dissipate the heat generated during operation to avoid a large amount of heat accumulation. The work efficiency is reduced. For details, see Vladimir G. Pastukhov et al., 2006, IEEE, 22nd IEEE SEMI-THERM Symposium, Low-noise cooling system for pc on the base of l〇〇p heat pipes. Referring to FIG. 1, the heat pipe 10 of the prior art generally consists of a heat pipe casing 11, a capillary structure layer 12, and a working fluid (not shown). The working principle is that the working fluid of the evaporation end 13 of the heat officer absorbs heat. When it becomes a gaseous state, the gaseous working fluid releases the absorbed heat when it reaches the condensation end 14 and is converted into a liquid state, and then flows back to the evaporation end 13 via the capillary structure layer 12. Generally, a heat sink is connected to the condensation end of the manifold. The heat sink is in contact with the air in a large area to dissipate the heat released from the condensation end 14 of the heat pipe into the air to achieve the purpose of diverging. The way in which the semiconductor component and the heat pipe are joined is indirect bonding and direct bonding. Among them, the indirect bonding method is to mount the semiconductor element on the printing: woven: printed circuit board (pcb) and heat (4) heat is radiated through the indirect heat pipe of the printed circuit board and then radiated by the heat pipe. Since the printed circuit board contains ', 邑, 彖, and the thermal conductivity of the insulating layer is low', the heat dissipation efficiency of the integrated system is not high. The direct bonding method is to connect the semiconductor component pure tube 6 1362729, and the heat generated by the semiconductor component during the working process is directly transmitted to the heat pipe and then dissipated through the heat pipe; the heat dissipation efficiency is much higher than that of the indirect bonding method. When the semiconductor element is bonded to the heat pipe, a direct bonding method is often used. However, the direct bonding of the prior semiconductor component to the heat pipe is generally completed, that is, the heat pipe and the semiconductor component which have been closed by the capillary structure and the working fluid are passed through a heat dissipating gel (such as silver paste) or a metal having a high thermal conductivity ( Such as tin) joints. Because the thermal conductivity of the thermal adhesive is not high, and it is easily deteriorated, embrittled or peeled off due to temperature during the working process, the surface mount technology (SMT) process is often used to bond the semiconductor component and the heat pipe with the molten tin. However, the temperature of the molten tin is usually around 280 ° C, while the working fluid of the general heat pipe is water, the saturated gas pressure of water vapor at 200 C is 15 times atmospheric pressure, and the saturation pressure of the working fluid when the temperature reaches 28 〇. It will exceed the capacity of the heat pipe, which will easily lead to bending deformation or explosion of the heat pipe. SUMMARY OF THE INVENTION In view of the above-mentioned deficiencies of the prior art, the present invention provides a method of bonding a semiconductor element to a thermal member, the bonding method comprising the steps of: providing a heat pipe housing having at least one open end; In vivo [wall formation - a capillary structure layer] The semiconductor element is metal-bondedly bonded to the heat pipe case formed with the capillary structure layer; the working fluid is injected into the heat-generating case after bonding with the semiconductor element and the heat pipe case is removed a gas in the body; sealing the at least one open end of the heat pipe casing. Compared with the prior art, the method of joining the semiconductor component to the heat pipe 7 1362729 causes the internal working fluid of the heat pipe casing when the semiconductor component is joined with the heat pipe casing 'After the two are joined, the fluid is injected into the heat pipe shell as a fluid. 2 This can avoid a large amount of hot body generated during the welding process and the air pressure is too high, which exceeds the heat pipe capacity to cause closure: A phenomenon such as a deformation or an explosion of the spurs is generated, so that the heat pipe can be effectively protected. [Embodiment] Referring to FIG. 2, an embodiment of the present invention provides a A method for bonding a conductor member, comprising the steps of: (1) Step 201: providing a heat pipe casing, wherein the heat pipe casing is a hollow tubular structure, and the heat pipe casing is a hollow tubular structure The heat pipe shell may be made of a material having a high thermal conductivity, such as copper, silver, inscription, gold, or a metal alloy. (2) Step 202: forming a capillary on the inner wall of the heat pipe casing, which will be capillary The structural substance is filled in the inner wall of the heat pipe casing, and the capillary structure f is fixed to the heat pipe casing by heating and sintering.
^ ’從而獲得該毛細結構層。該毛細結構物質可 末或金屬合金粉末，亦可為吸水性較好之纖維、毛細管 多孔性二氧化矽、吸水陶瓷等具毛細現象之物質。B (3)步驟203··將半導體元件與形成有毛細結構層 熱管殼體以金屬固接接合。其中，所採用之金屬^接i 方式可為表_著(讀)接合。具料將金屬固接物= 錫與其他金屬之化合物固接於半導體元件與熱管殼體2 間’其方式可為··印刷壓印一金屬固接物於該熱管：體2 並加熱使金屬固接物因吸熱軟化而附著於熱管殼體上 ，供 8 丄 :將半導體元件壓於該金屬固接物上；然後將該半導體元 &屬固接物及熱管殼體置於高溫爐内加熱使金屬固接 溶融並和該半導體元件與該熱管殼體緊密接觸；冷卻後 P可使該半導體元件與該熱管殼體完成接合。 y理解的是，所採用之金屬固接接合方式並不限於表 2著接合，其還可為共晶鍵合(Eutectic B°nding)或點烊接 ^方式。其中’共晶鍵合方式主要是利用共晶溫度鍵合 網而體疋件與熱管殼體，先於半導體元件與熱管殼體之接 —射間介質，該中間介質―般為薄金 "質刀別與半導體元件和熱管殼體於接觸面上通過化學 =形成化學鍵（電偶極），將半㈣元件與齡殼體結合在 ，再於半導體70件與熱管殼體之接觸面施壓並進行孰 ::方：接觸面接合在一起’達成預定之鍵合強度。點焊、 要是採用以錫為主之錫合金材料作焊料，利用 =搶使知料炼化’炼流態之錫焊料借助於毛細管吸力沿半 V體7L件與熱管殼體之接觸表面擴散， 殼體分別與錫肩子之間相石哄2,、 導體兀件/、熱官 興场原子之間相互吸引、擴散、結合而牢固地接 ^本^驟中’半導體元件與熱管殼體接合之過程會產 ΐίη:但由於此時之熱管殼體内沒有工作流體且 現ΐ二！：端，因此熱管殼體内部不會出現高壓之 免了先刖之封閉熱管於高溫高壓之情況下出現彎 曲變形或爆炸等現象，從而可有效地保護㈣。 ⑷步驟204:向與半導體元件接合後之熱管殼體内注 9 1362729 入工作流體並排除熱管殼體内之氣體。於步驟2〇4中，。 先向熱管殼體内注入工作流體後再將熱管殼體内之氣體Z 除，也可先排除熱管殼體内之氣體後再向熱管殼體内注入 工作流體，具體情形則可視工作流體之特性而定。其中， 該注入至熱管殼體之工作流體可選用水、醇類、_ 其他有機化合物或是無機化合物等。氣體排除方法可^ =排氣法、真空排氣法、氧化還原排氣法、渗透排氣法 4方去以排除熱管殼體内之空氣等氣體。 ,、 (5)步驟205:密封熱管殼體之該至少一個開口端 熱官设體内部形成萍：閉& vii- 1之 丨办成在閉工間，從而獲得-個封閉之熱管， 5乂…、官"、半導體元件以金屬固接接合。 推一3，於本發明實施例提供之步驟202之前，還可 中，二驟206:將熱管殼體機械處理成預定形狀。其 I各可為彎折或壓平;例如將熱管殼體彎折 :易=使之該熱管殼體與該半導體元件之結合面 力作用下二見二:於=處理過程中防止毛細結構層於外 緊貼于該熱管殼體内壁，再完成將：：：構層向外擴張並 步驟，之後再將該支撐體::成將需壓平之 也可執行於步驟202之後且牛^^曰明的疋·步驟屬 熱管殼體之製作方式而定。乂驟203之前’具體情形可視 請參見圖4’於本發明實施例提供之步驟節之後，還 1362729 可進一步包括步驟207:將一個電路板與半導體元件電性接 ' 合。其中，與半導體元件形成電性接合之電路板和封閉之 熱管53之間之相對位置關係可為圖5及圖6所示之兩種情 形之一。 參見圖5，該電路板54與熱管53相互分離。該半導體 元件51通過金屬固接物52與熱管53相接合；該電路板54 與該熱管53相互分離。該電路板54包括導電層541和絕 緣層542,該電路板54之導電層541通過導線55與半導體 鲁元件51電性接合。該電路板54為印製電路板（PCB)、金屬 電路板（MCPCB)等，其絕緣層542由樹脂、橡膠等絕緣材 料製成。該金屬固接物52為熱傳導率較高之金屬，如焊錫 等材料製成。 參見圖6,該電路板64設置於該熱管53之殼體之外壁 上。該半導體元件51通過金屬固接物52與熱管53相接合； 該電路板64設置於熱管53之殼體之外壁上，其包括導電 層641和絕緣層642。該電路板64之導電層641通過導線 65與半導體元件51電性接合，該電路板64之絕緣層642 與熱管53殼體之外壁通過接合物質66相接合。該接合物 質66為導熱膠或焊錫等物質。 上述各實施方式中之半導體元件51可選自發光二極體 (Light Emitting Diode，LED)、雷射二極體（Laser Diode)、 發光二極體晶片（LED chip)、高功率元件（High Power Elements)、高頻元件（High Frequency Elements)及功率積體 電路（Power IC)。 11 1362729 需要指明的是’圖5和圖6僅給出熱管”為 之圓柱形，但是’本領域技術人員可理解的是 ： 為其他不同之形狀，例如，為圓柱形或雙㈣平# ' 綜上所述’本發明確已符合發明專利之要件遂。 提出專射請。但是以上所述者僅為本發明之較佳實^ 式，不能以此限制本案之申請專利範圍。舉凡熟悉本= 藝之人士援依本發明之精神所作之等效料或變=^ ' to obtain the capillary structure layer. The capillary structure material may be a powder or a metal alloy powder, or may be a material having a water absorbing property such as a fiber having a good water absorption property, a capillary porous cerium oxide, or a water absorbing ceramic. B (3) Step 203·· The semiconductor element is bonded to the heat pipe case in which the capillary structure is formed by metal bonding. Among them, the metal connection method used can be a table-like (read) joint. The metal fixing material = tin and other metal compound is fixed between the semiconductor element and the heat pipe casing 2'. The method can be: printing a metal fixing on the heat pipe: body 2 and heating to make the metal The fixing material adheres to the heat pipe shell due to heat absorption softening for 8 丄: pressing the semiconductor component on the metal fixing; then the semiconductor element & sturdy and heat pipe casing are placed in a high temperature furnace Heating causes the metal to be solid-melted and in close contact with the heat-sink housing of the semiconductor element; after cooling, P can complete the bonding of the semiconductor component with the heat pipe casing. y understands that the metal bonding method used is not limited to the bonding, but it may also be a Eutectic Bounding or a Docking. Among them, the 'eutectic bonding method mainly uses the eutectic temperature bonding mesh to connect the body member and the heat pipe casing, and precedes the connection between the semiconductor component and the heat pipe casing-intermediate medium, which is generally thin gold" The knives and the semiconductor component and the heat pipe casing are chemically bonded to form a chemical bond (electric dipole) on the contact surface, and the half (four) component is combined with the age casing, and then the contact surface of the semiconductor 70 and the heat pipe casing is pressed. And carry out 孰:: square: the contact faces are joined together to achieve the predetermined bonding strength. Spot welding, if a tin-based tin alloy material is used as the solder, the solder is refining and refining, and the tin solder of the refining state is diffused along the contact surface of the semi-V body 7L member and the heat pipe casing by capillary suction. The shell is separated from the tin shoulder by a stone 哄 2, and the conductor element/, the heat-existing field atom attracts, diffuses, and combines with each other to firmly connect the semiconductor element to the heat pipe shell. The process will be produced ΐ ηη: But because there is no working fluid in the heat pipe shell at this time, it is now two! : End, so there is no high pressure inside the heat pipe shell. The closed heat pipe of the first heat pipe can be bent or deformed under high temperature and high pressure, so that it can be effectively protected (4). (4) Step 204: Note 9 1362729 into the heat pipe housing after the semiconductor component is joined into the working fluid and remove the gas in the heat pipe casing. In step 2〇4, First, the working fluid is injected into the heat pipe casing, and then the gas Z in the heat pipe casing is removed. The gas in the heat pipe casing can be removed first, and then the working fluid is injected into the heat pipe casing. The specific conditions can be regarded as the characteristics of the working fluid. And set. Wherein, the working fluid injected into the heat pipe casing may be selected from water, alcohol, _ other organic compounds or inorganic compounds. The gas removal method can be: exhaust gas method, vacuum exhaust method, redox gas method, and permeation gas method to remove gas such as air in the heat pipe casing. , (5) Step 205: sealing the heat pipe housing of the at least one open end of the heat official body to form a ping: closed & vii-1 is completed in the closed work room, thereby obtaining a closed heat pipe, 5乂..., official", semiconductor components are bonded by metal. In the first step, before the step 202 provided by the embodiment of the present invention, the second step 206: mechanically processing the heat pipe casing into a predetermined shape. Each of the I can be bent or flattened; for example, the heat pipe casing is bent: easy = the bonding force between the heat pipe casing and the semiconductor element is used to prevent the capillary structure layer from being treated during the treatment process. The outer layer is tightly attached to the inner wall of the heat pipe casing, and then the ::: formation layer is outwardly expanded and the step is followed, and then the support body is: it is required to be flattened and can be executed after step 202 and the cattle ^^曰The steps of the Ming are determined by the way the heat pipe casing is made. </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; The relative positional relationship between the circuit board electrically connected to the semiconductor element and the enclosed heat pipe 53 can be one of the two cases shown in Figs. 5 and 6. Referring to FIG. 5, the circuit board 54 and the heat pipe 53 are separated from each other. The semiconductor element 51 is joined to the heat pipe 53 by a metal bond 52; the circuit board 54 is separated from the heat pipe 53. The circuit board 54 includes a conductive layer 541 and an insulating layer 542, and the conductive layer 541 of the circuit board 54 is electrically coupled to the semiconductor light element 51 via a wire 55. The circuit board 54 is a printed circuit board (PCB), a metal circuit board (MCPCB), or the like, and the insulating layer 542 is made of an insulating material such as resin or rubber. The metal anchor 52 is made of a material having a high thermal conductivity, such as a solder. Referring to Figure 6, the circuit board 64 is disposed on the outer wall of the housing of the heat pipe 53. The semiconductor element 51 is bonded to the heat pipe 53 via a metal bond 52; the circuit board 64 is disposed on the outer wall of the heat pipe 53 and includes a conductive layer 641 and an insulating layer 642. The conductive layer 641 of the circuit board 64 is electrically coupled to the semiconductor component 51 via a wire 65. The insulating layer 642 of the circuit board 64 is bonded to the outer wall of the heat pipe 53 by the bonding material 66. The bonding material 66 is a material such as a thermal conductive paste or a solder. The semiconductor device 51 in each of the above embodiments may be selected from a light emitting diode (LED), a laser diode, a LED chip, and a high power component (High Power). Elements), High Frequency Elements, and Power ICs. 11 1362729 It should be noted that 'Fig. 5 and Fig. 6 only give the heat pipe' as a cylindrical shape, but 'the skilled person can understand that: for other different shapes, for example, cylindrical or double (four) flat # ' In summary, the present invention has indeed met the requirements of the invention patent. The specific application is proposed. However, the above description is only a preferred embodiment of the present invention, and the scope of the patent application of the present invention cannot be limited thereto. = Equivalent material or change made by the person of Art in accordance with the spirit of the present invention =
涵蓋於以下申請專利範圍内。 白… 【圖式簡單說明】 圖1為先前技術中熱管之工作原理示意圖； 圖2為本發明實施例提供之一種半導體元件與熱管之 接合方法之流程圖； ...... 圖3為於圖2所示流程圖中增加將熱管殼體機械處理 成預定形狀之步驟之流程圖； 圖4為於圖2所示流程圖中增加將電路板與半導體元 籲件電性接合之步驟之流程圖； 圖5為本發明實施例中電性接合之電路板與半導體元 件之侧視圖。 圖6為本發明另一實施例中電性接合之電路板與半導 體元件之側視圖。 【主要元件符號說明】 熱管 10、53 熱管殼體 11 毛細結構層 12 12 1362729 蒸發端 13 冷凝端 14 電路板 54、64 半導體元件 51 金屬固接物 52 導電層 541 、 641 絕緣層 542、642 導線 55、65 接合物質 66It is covered by the following patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing the operation principle of a heat pipe in the prior art; FIG. 2 is a flow chart showing a method of joining a semiconductor element and a heat pipe according to an embodiment of the present invention; Figure 2 is a flow chart showing the steps of mechanically processing the heat pipe casing into a predetermined shape in the flow chart shown in Figure 2; Figure 4 is a step of adding a step of electrically joining the circuit board to the semiconductor element in the flow chart shown in Figure 2. FIG. 5 is a side view of a circuit board and a semiconductor component electrically bonded in an embodiment of the present invention. Figure 6 is a side elevational view of an electrically bonded circuit board and semiconductor component in accordance with another embodiment of the present invention. [Main component symbol description] Heat pipe 10, 53 Heat pipe housing 11 Capillary structure layer 12 12 1362729 Evaporation end 13 Condensing end 14 Circuit board 54, 64 Semiconductor component 51 Metal bond 52 Conductive layer 541, 641 Insulation layer 542, 642 Conductor 55, 65 bonding material 66
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