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TWI360835B - Residual layer thickness measurement and correctio - Google Patents

Residual layer thickness measurement and correctio Download PDF

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Publication number
TWI360835B
TWI360835B TW096111821A TW96111821A TWI360835B TW I360835 B TWI360835 B TW I360835B TW 096111821 A TW096111821 A TW 096111821A TW 96111821 A TW96111821 A TW 96111821A TW I360835 B TWI360835 B TW I360835B
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layer
substrate
fine droplets
fine
thickness
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TW096111821A
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TW200746256A (en
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Christopher E Jones
Niyaz Khusnatdinov
Stephen C Johnson
Phillip D Schumaker
Pankaj B Lad
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Molecular Imprints Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/003—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor characterised by the choice of material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32—Component parts, details or accessories; Auxiliary operations
    • B29C43/58—Measuring, controlling or regulating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
    • B29C2043/023—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves
    • B29C2043/025—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves forming a microstructure, i.e. fine patterning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32—Component parts, details or accessories; Auxiliary operations
    • B29C43/58—Measuring, controlling or regulating
    • B29C2043/5825—Measuring, controlling or regulating dimensions or shape, e.g. size, thickness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32—Component parts, details or accessories; Auxiliary operations
    • B29C43/58—Measuring, controlling or regulating
    • B29C2043/5891—Measuring, controlling or regulating using imaging devices, e.g. cameras

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)

Description

九、發明說明： 本專利申請案要請求N〇.60/788,808美國暫時專利申請 案的優先權，其内容併此附送。 【發明所屬之技術領域】 發明領域 本發明係有關於殘餘層厚度之測量及校正。 【先前技術;j 發明背景 奈米製造包括製造非常小的結構物，例如具有奈米級 或更小的特徵細構者。奈米製造已具有可觀影響之一領域 是在積體電路的處理。由於半導體製造產業不斷地致力於 更大的製造產'能，並同時逐增形成於一基材上之每單位面 積的電路’故奈米製造變得愈來愈重要。奈米製造能提供 更大的製程㈣，同時容許更多地_所製成結構物的最 小特徵尺寸。其它已使用奈米製造的研發領域包括生物科 技、光學科技，及機械系統等等。 -種舉例的奈米製造技術—般係稱為壓印微影術。舉 例的壓印《製法曾被料於許多公開㈣中，例如 2_/_娜美國㈣φ請公_ g卩美國專利申請案 N〇.10/264,96G，其名稱㈣以在—基#上排列細構來複製 具有最小尺寸可變性之細構的方法和模具”；期侧 美國專利中請公開案即美國專利申請案N。· i 〇/264,926，其 名稱為“在-基材上形成—層以便製造量測標準的方法”； 及No.6,936，194美國專利荦，复夂掂 系其名稱為“用於壓印微影製法 的功能性圖案化材料”，所右兮莖欠安 听有該專各案皆已讓渡給本發明的 受讓人。 1360835
在上述各美國專利申請公開案及美國專利等中所揭的 壓印微影技術皆包括在一可聚合化層中形成一凹凸圖案， 並將一對應於該凹凸圖案的圖案移轉至一底下的基材。該 基材可被置放在一作動平台上來獲得一妥當的位置以便於 5 其圖案化。其中，有一模板會被使用而與該基材間隔分開， 並有一可成形的液體存在於該模板與基材之間。該液體會 固化來形成一固化層，且會有一圖案記錄其中，其係順應 於接觸該液體之模板的表面形狀。該模板嗣會由該固化層 釋離，而使該模板與基材間隔分開。該基材和固化層嗣會 10 被進行各製程，以將一對應於該固化層之圖案的紋路影像 移轉至該基材中。 該固化層可包含一殘餘的材料層，即一連續層。殘餘 層厚度（RLT)和殘餘層厚度均一性係用以評估所壓印晶圓 品質的關鍵量度。在許多用途中，一電漿蝕刻步驟會緊接 15 於壓印之後。薄膜厚度均一性對電漿蝕刻的需要在該領域 中係甚為習知。RLT均一性會決定要被蝕刻之壓印樣品的 薄膜厚度均一性。目前，殘餘層厚度均一性係使用肉眼觀 察邊緣圖案來評估。其中，當該液體被配置於該模板與基 材之間時，並沒有計量的反饋可用以改善該殘餘層均一性。 20 【明内容】 發明概要 依據本發明之一實施例，係特地提出一種在一壓印微 影系統中，一種方法包含：a)沈積多數的壓印流體細滴於 一基材上，該等細滴具有一細滴圖案，其中每一細滴皆具 6 1360835 有一指定尺寸及在該基材上的位置；b)進行該等壓印流體 細滴的壓印，其係藉圖案化在一模與該基材之間的壓印流 體而造成一壓印層；C)測量該壓印層之一殘餘層的厚度； d)計算一新的細滴圖案，其可藉調整某些該等細滴的指定 5尺寸和位置來補償該殘餘層厚度中的不均一處；及匀重複 步驟b)。
依據本發明之一實施例，係特地提出一種壓印微影系 統，包含：一流體配佈系統用以沈積多數的壓印流體細滴 於一基材上，該等細滴具有一細滴圖案其中每一該等細滴 10 皆具有一指定尺寸及在該基材上的位置；一壓印模用以進 行該等壓印流體細滴的壓印，其係藉圖案化該壓印模與兮 基材之間的壓印流體來造成一壓印層；一膜厚測量工具用 以測量該壓印層之一殘餘層的厚度；一電路用以計算—新 的細滴圖案，其可藉調整某些該等細滴的指定尺寸和位置 15 來補償該殘餘層之厚度中的不均一處。 圖式簡單說明 第1圖為一微影系統的間化側視圖’其具有一模板與— 基材間隔分開； 第2圖示出一殘餘層； 20 第3圖為一薄膜厚度測量工具靠近第1圖所示之基材的 簡化視圖； 第4圖示出一被第3圖所示之厚度測量工具所攝得的赘像. 第5圖為第4圖所示之影像的簡化三維視圖； 第6圖為該基材的頂視圖，並有一細滴圖案配置其上. 7 1360835 第7A〜7〇圖示出用以處理一不均勻殘餘層之各舉例 步驟；及 第8圖示出一用以補償—不均勻殘餘層的方法。 【實施方式】 5較佳實施例之詳細說明
凊參閱第1圖，-用以在—基材12上形成—凹凸圖案的 系統8包含一平台1〇其上係撐持該基材12，及一模板14其上 具有-圖案化表面18。在另一實施例中，基材12可被連接 於-基材固持件(未示出），該基材固持件（未示出）可為任何 10固持件，包括但不限於真空和電磁式。 模板14及/或模16可由如下材料製成，包括但不限於： 熔凝的二氧化矽、石英、矽、有機聚合物、矽氧烷聚合物、 硼矽酸鹽玻璃、氟烴聚合物、金屬，及硬化的藍寶石。如 所示’圖案化表面18包含由許多間隔分開的凹部17和凸部 15 19所界定的特徵細構。但在另一實施例中，該圖案化表面
18可為實質光滑及/或平坦的。圖案化表面18可界定一原始 圖案，其會形成要被製設在基材12上之圖案的基礎。 模板14可被連接於一壓印頭20以便於模板14和模16的 移動。在另一實施例中，模板14可被連接於一模板固持件 20 (未示出），該模板固持件（未示出）可為任何固持件，包括但 不限於真空和電磁式。一流體配佈系統22會被連接而可被 選擇性地定位來與基材12導通流體，俾將聚合材料24沈積 其上。應請瞭解該聚合材料24可被使用任何習知技術來沈 積，例如滴配、旋塗、沾塗、化學蒸氣沈積(CVD)、物理蒸 8 氣沈積(PVD)等等。 一月b量源26會被連接來沿一路徑30導送能量28。壓印 頭20和平台10係被構設成可分別使該模16和基材12呈重疊 排列並位於路楂30中。該壓印頭2〇和平台1〇之任一者，或 其一者，皆可改變該模16與基材12之間的距離俾在其間界 定一所須容積，其會被聚合材料24填滿。 清參閱第1和2圖’通常，聚合材料24係在該所須容積 被界定於模16與基材12之間之前先被沈積於基材12上。 但’聚合材料24亦可在該所須容積已獲得之後才來填滿該 容積。在該所須容積填滿聚合材料24之後，該能量源26會 產生此里28 ’例如寬帶能量其會使聚合材料24順應於基材 12之表面25和圖案化表面18的形狀來固化及/或交鏈，而在 基材12上界定一圖案化層5〇。其具有一聚合材料24的連續 形成物覆設於該表面25上。更具言之，該圖案化層5〇包含 次部份34a和34b等’其中次部份34b係與凸部19重疊，而次 部份34a具有一厚度tl，次部份34b具有一厚度t2，且次部份 34b通常稱為殘餘層。厚度tH〇t2可為任何所須厚度，乃視 用途而定。 請參閱第1、2及3圖，該寬帶能量可包含一光化性成 分，包括但不限於紫外線波長、熱能量、電磁能量、可見 光等。所使用的光化性成分乃為熟習該領域的人所習知， 且典型係取決於形成該壓印層12的材料。此製程的控制係 由一處理器32來規制，其會與平台10、壓印頭2〇、流體配 佈系統22、能量源26等傳訊資料，並依儲存在記憶體“内 1360835 的電腦可讀程式來操作。該系統8可更包含一膜厚測量工具 60與該基材固持件（未示出）連接，如後所詳述。該膜厚測量 工具60可包含一光學檢測系統，並亦能與處理器32資料傳 訊。該膜厚測量工具60可為一般使用於半導體製造的獨立 5 工具。該等工具可由 Metrosol, Inc·, Filmetrics，Rudolph Technologies，及λ A. Woolam等公司購得。
圖案化層50的厚度t2可能會有變異，此乃是不佳的。 更具言之’假使不能免除，則儘量最小化該等次部份34b之 間即該殘餘層的變異，將可改善該圖案化層50之重要尺寸 10 的控制’此乃是較佳的。在一例中，最好能將在一般的壓 印中所見到的次部份34b之變異減少至低於大約30nm的水 準，俾可最小化(假使不能免除）對被蝕刻特徵細構之重要尺 寸的影響。 15
其中’該等次部份34b之厚度t2的變異可被測出以產生 測量資料，而該測量資料可便於設計將聚合材料24配置在 基材12上。於本實施例中’聚合材料24係呈多數的細滴被 配置在基材12上，故而，該測量資料可便於設計該聚合材 料24的細滴圖案。因此，該等次部份34b之厚度t2的均一性 將可被達成。 該等次部份34b之厚度t2的變異乃可使用膜厚測量工 具60在多數的點處來測出，且該光學檢測系統會數位化壓 印場，即圖案化層50 ;然後使用以儲存於記憶體34中之電 腦可讀程式來操作的處理器32來分析該等壓印場，以構建 整個圖案化層50上之各次部份34b的厚度t2分佈圖。其中， 10 該聚合材料24的細滴圖案可依據各次部份34的厚度t2差異 而來改變，即’細滴可被增加或減少，細滴偏移可被改變’ 個別的細滴體積可被改變等等，以產生一細滴圖案，其可 促使包含該等次部份34b的圖案化層50具有一所需的厚度 均一性。 請參閱第1及3圖，其中，膜厚測量工具60可被定位在 一固定角度並間隔於該基材12，且由該壓印場即圖案化層 50至膜厚測量工具的距離會被算出。一校正程序可能需 要用來獲得該壓印場的精確尺寸。一種可擇之用以測量該 殘餘層厚度的方法會測出該薄膜的光學性質’例如由該場 反射的反射強度vs.波長，或圓形vs.橢圓偏振化。這些分光 測量值嗣會被適配於一膜疊的模型來決定相關的參數，譬 如薄膜厚度。此一程序可使用前述市售的膜厚測量工具來 執行。 請參間第1和4圖，當該壓印場的影像被該膜厚測量工 具60攝取之後，以儲存在記憶體34中之電腦可讀程式來操 作的處理器32會使用一運算法來將該影像轉變成一方形 (或矩形、圓形等）的壓印區域。然後，處理器32可將顏色和 暗度差異轉換成該壓印場的Z高度輪廓。第5圖係示出第4 圖所示之該場的一三維視圖例。又，該儲存在記憶體34中 之電腦可讀的程式可包含一名稱為lmagej的程式，其可由 http://rsb.info,nih.frnv/i)/ ψ 得 〇 該壓印場的進一步分析會被執行而以一多項式二維函 數，y)來構圖該基材12的表面25。以此方式，吾人能為 1360835 每一（χ，y)點指定一特定厚度。又，一平均值g(x，y)將可 被算出，且與此平均值之偏差值W(X，y)==g(x，y) f(x，力 亦同。 該斜率g(X，y)將會被用來計算該細滴圖案在方向 5的偏離。偏差函數w(x，y)將會被用來控制局部的單位流體 體積、細滴數目、細滴位置和細滴本身的體積。
第6圖示出一用於壓印的聚合材料24之細滴圖案例，其 會產生一如第5圖所示的所須厚度輪廓。使用一多噴嘴配佈 單元’各種細滴圖案皆可被產生於該基材上，譬如—均句 10 格陣加上局部補償的細滴者。 又’第6圖中的細滴圖案對應於以下的細滴矩陣Μ(χ , : 1 : (0，0)3.3113Ε-4μί(微公升)x29滴 (〇，0)視為該模板的中心 2 : (-0.95，0.95)3.3113E-4uLx6 15
20 3 : (-0.65，0.95)3.3113E-4uLxl5 4 ： (-0.95 « 0.65)3.3113E-4uLx6 5 ： (-0.73 > 0.73)3.3113E-4uLxl5 6 ： (-0.56 > 0.56)3.3113E-4uLxl6 7 : (-0.4，0.4)3.3113E-4uLxl3 8 ： (-0.24 > 0.26)3.3113E-4uLx6 9 ： (0.032)3.3113E-4uLx6 10 : (0，0.52)3.3113E-4uLxl3 11 : (-0.15，1)3.3113E-4uLx7 12 ： (〇 » 0.8)3.3113E-4uLx20 12 1360835
10 15 20 13 ·· (0.15，1)3.3113E-4uLx7 14 ： (0.65 > 0.95)3.3113E-4uLxl5 15 : (0.95，0.95)3.3113E-4uLx6 16 : (0.95，0.65)3.3113E-4uLx6 17 : (0.73，0.73)3.3113E-4uLxl5 18 : (0.56，0.56)3.3113E-4uLxl3 19 ： (0.4 » 0.4)3.3113E-4uLxl3 20 : (0.24，0.26)3.3113E-4uLx6 21 : (0.3，0)3.3113E-4uLx6 22 : (0.5，0)3.3113E-4uLxl3 23 ： (1 > 0.15)3.3113E-4uLx7 24 : (0.8，0)3.3113E-4uLxl5 25 ： (1 » -0.15)3.3113E-4uLx7 26 : (0.95，-0.65)3.3113E-4uLx6 27 : (0.95，-0.95)3.3113E-4uLx6 28 : (0.65，-0.95)3.3113E-4uLxl0 29 : (0.73，-0.73)3.3113E-4uLxl5 30 : (0.56，-0,56)3.3113E-4uLxl3 31 ： (0.4 > -0.4)3.3113E-4uLxl3 32 : (0.24，-0.26)3.3113E-4uLx6 33 : (0，-0.32)3.3113E-4uLx6 34 ： (0 > -0.52)3.3113E-4uLxl3 35 : (0.15，-1)3.3113E-4uLx7 36 : (0，-0.8)3.3113E-4uLxl5 13 1360835 37 : (-0.15，-1)3.3113E-4uLx7 38 ： (-0.24 > -0.26)3.3113E-4uLx6 39 : (-0.4，0.4)3.3113E-4uLxl3 40 ： (-0.56 > -0.56)3.3113E-4uLxl9 5 41 ： (-0.73 > -0.73)3.3113E-4uLxl5
42 : (-0.65，-0.95)3.3113E-4uLxlO 43 : (-0.95，-0.95)3.3113E-4uLx6 44 : (-0.95，-0.65)3.3113E-4uLx6
45 ： (-1 · -0.15)3.3113E-4uLx7 10 46 ： (-0.8 * 0)3.3113E-4uLx20 47 ： (-1 > 0.15)3.3113E-4uLx7 48 ： (-0.5 - 0)3.3113E-4uLxl3 49 : (-0.3，0)3_3113E-4uLx6 其中，為補償該等次部份34b之厚度t2的變異，以下方 15 式乃可被使用： 1. 使用函數g(x，y)來算出以一向量S代表的細滴圖案偏移: S=-A grad(g(x，y))i-B grad(g(x，y))J， 其中i和j係為沿X和Y轴的單位向量。A、B係為比率係 數，其必須例如使用一空白的凸台模板來實驗地決定。壓 20 印新場並再測量g(x，y)。驗證在X和Y方向的斜率係接近0。 2. 當函數g(x，y)的梯度已最小化後，個別的細滴體積 會被定址。將細滴圖案矩陣M(x，y)乘以函數w’(x，y)，其中： w,=(x，y)=w(x，y)/(max(w(x，y))-min(w(x，y))) 因此新的細滴圖案M’(x，y)將成為： 14 .^60835 (x y)~M(x > y)xw*(x » y) 3.藉測量g(x ’ y)的斜率並最小化函數 新的壓印具有均一厚度。 w(x ’ y)來驗證該
-種用以獲得-均勾殘餘層厚度(RLT)的方法係示於 〜7D和8圖中。在步驟8〇1時，該壓印工具會被校正以 、疋多少流體須魏佈俾使—壓印具有所須厚度^在步驟 8_〇2時’―均勻分佈的流體會被沈積在該基材上如第7A圖所 不。-壓印會被進行。蒸發和其它的不均一性可能會使該 1 RLT成為不一致的。在步驟如時，町的均—性會被使用 10 _厚測量工具60遍及該壓印場中之一密集的點陣列來測 量。在步獅4時，若-所須的均-性已達到，則該程序可 在步驟805結束。假使沒有（見第7B圖），則該程序會前進至 步驟806,其中有一上述的運算法會被使用，譬如在處理器 2中運作的軟體，而來計算出一新修正的細滴圖案，其將 15會添加細滴、或增加細滴尺寸於較薄的區域，及/或由較厚 的區域除掉細滴，或縮減細滴尺寸，來達到更佳的RLT均 —性。該程序嗣會回到步驟802 ’而使用修正的細滴圖案（見 第7C圖）來進行一新的壓印，且步驟803和804會再被執行。 此方法可依需要來被重複進行，直到—所須的RLT均一性 〇 達到為止’如第7D圖中所示。 上述方法可被用來獲得一被配置在基材12上以填滿該 模16中之特徵細構（凸部17和凹部19)的容積之聚合流體24 的所須體積。在另一實施例中，上述方法可被用來補償該 專聚合材料24細滴在被配置於基材12上之後而在與模16接 15 1360835 觸之前的蒸發。在此二情況中，使基材12上的聚合材料24 體積匹配於該模16中的細構容積將可造成改善的殘餘層均 一性，即該等次部份34b的厚度t2變異。此改善的殘餘層均 一性會促成被壓印及蝕刻的晶圓之整體特徵細構CDs的較 5 佳控制。且，上述各缺點及當該殘餘層的穿破蝕刻時形成 小刻面的影響，若不能夠免除亦可被最小化。
上述本發明的實施例係為舉例。許多變化和修正可被 實施於上述揭露中，而仍保留在本發明的範圍内。因此， 本發明的範圍不應被上述内容所限制，而應參照所附申請 10 專利範圍及其等效實質的完整範圍來決定。 【圖式簡單說明】 第1圖為一微影系統的簡化側視圖，其具有一模板與一 基材間隔分開， 第2圖示出一殘餘層； 15 第3圖為一薄膜厚度測量工具靠近第1圖所示之基材的 簡化視圖； 第4圖示出一被第3圖所示之厚度測量工具所攝得的影像； 第5圖為第4圖所示之影像的簡化三維視圖； 第6圖為該基材的頂視圖，並有一細滴圖案配置其上； 20 第7A〜7D圖示出用以處理一不均勻殘餘層之各舉例 步驟；及 第8圖示出一用以補償一不均勻殘餘層的方法。 16 1360835
【主要元件符號說明】 8...壓印微影系統 24...聚合材料 10...平台 25…基材表面 12…撕 26...能量源 13...輸入/輸出單元 28...能量 14…模板 30…路徑 16…模 32...處理器 17...凹部 34...記憶體 18...圖案化表面 34a、b...次部份 19...凸部 50...圖案化層 20...壓印頭 60...膜厚測量工具 22…流體配佈系統 801〜806...步驟
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Claims (1)

1360835 5
10 胁？月/έ日修正本 第96m821號申請案申請專利範圍修正頁 100 09 16 十、申請專利範園： 1. 一種用於壓印微影系統之方法，其包含： a) 沈積壓印流體的多數細滴於—基材上，該等多數 細滴具有—細滴圖案，其巾該等多數細射之每一細滴 皆具有-指定尺寸及在該基材上的位置； b) 進行該壓印流體的$等多數細滴# 一第一壓 印’其係藉圖案化在_模與該基材之間的該壓印流體而 造成第一壓印層； c) 測量該第-壓印層之-殘餘層的—厚度； d) 汁算一新的細滴圖案，其可藉調整該等多數細滴 中之特疋細滴的該等指定尺寸和位置來補償該殘餘層 的3亥厚度中的不均一處；及 e)使用3亥新的細滴圖案進行細滴的一第二壓印造 成一第二壓印層。 如申叫專利||圍第1項之方法，更包含測量該第二壓印 層之一殘餘層的一厚度。 如申明專利範圍第2項之方法’其中該第二壓印層具有 —殘餘層，該殘餘層具有一所須的厚度均一性。 4·—種壓印微影系統，包含： 20 一法 机體配佈系統，用以沈積壓印流體的多數細滴於 基材上，該等多數細滴具有一細滴圖案，其中該等多 數細滴中之每一細滴皆具有一指定尺寸及在該基材上 的位置； 一壓印模，用以進行該壓印流體的該等多數細滴的 18 1360835 第96111821號申請案申請專利範圍修正頁 100.09.16. 一壓印，其係藉圖案化在該壓印模與該基材之間的該壓 印流體來造成一壓印層； 一膜厚測量工具，用以測量該壓印層之一殘餘層的 一厚度； 5 一電路，用以計算一新的細滴圖案，其可藉調整該 等多數細滴中之特定細滴的該等指定尺寸和位置來補 償該殘餘層之該厚度中的不均一處。
19 1360835 竹年f月/i日修(¾正替換頁 第96111821號申請案圖式修正頁 修正日期：99. 09.13.
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