100年11月 1360868 六、發明說明： 【發明所屬之技術領域】 _1 ]本發明涉及一種影像感測晶片封裝結構及方法，以及應用 該封裝結構的相機模組。 【先前技術】 [0002]請參閱圖1，一種先前影像感測晶片封裝結構1，其包枯 一個玻璃片2、一個影像感測晶片3及基板4。所述影像感 測晶片3具有一個影像感測區3A及複數個晶片焊塾3B ’所 述複數個晶片焊墊3B環繞所述影像感測區3A設置。所述 基板4具有頂面4a及形成於所述基板4邊緣之凸緣4c ’所 述頂面4a與所述影像感測晶片3遠離所述影像感測區3A之 表面相粘接，在所述基板4之頂面4a設置有與所述晶片焊 墊3B相對應數量之基板焊墊4D，利用導線5將所述晶片焊 墊3B與所述基板焊墊4D電性連接。所述玻璃片2粘接於所 述基板4凸緣4c，並覆蓋所述影像感測區3A。 [0003]然而，此種影像感測晶片封裝結構1係通過將影像感測晶 片3固定於基板4後再進行封裝，由於基板4本身具有一定 厚度，並留有與晶片焊墊3B對應之基板焊墊4])，所以無 形中增加了封裝之高度及面積，使封裝尺寸較大。 【發明内容】 剛#馨於此，有必要提供-種小尺寸之影像感測晶片封裝 結構。 [0005] 097120160 -種影像㈣明片封裝結構，其包括—個晶片及一個透 明基材，所述晶片具有-感光面，所述感光面上設置有 一影像感測區及複數個晶片焊熱， 巧鲆登所述複數個晶片焊墊 表單编號A0101 帛4頁/共30頁 1003444097-0 1360868 JOO年 11 月·30 日 圍繞所述影像感測區設置，其中，所述影像感測晶片封 裝結構包括一個牆體、複數個導電體、複數個焊件及複 數個黏著物，所述牆體由不透光且絕緣之材料製成，所 述牆體設置於所述感光面上，並環繞所述影像感測區設 置’所述牆體對應所述複數個晶片焊墊開有複數個導通 通孔’所述複數個導電體通過所述複數個導通通孔與所 述複數個晶片焊墊連接，所述透明基材通過所述黏著物 連接於所述牆體上並封閉所述影像感測區，所述透明基 材對應所述複數個導通通孔開有複數個連接通孔，所述 焊件通過所述複數個連接通孔與所述複數個導電體連接 0 * [0006] 一種相機模組，其包括鏡座、至少一個鏡片、電路板及 景夕像感測晶片封裝結構，所述鏡座呈中空狀，其包括鏡 筒及底座，所述鏡片固設於所述鏡筒内，所述電路板有 第一連接面、第二連接面及一通光孔，所述通光孔貫穿 所述第一連接面及所述第二連接面，與所述鏡筒同轴設 置，所述第一連接面與所述底座邊緣連接，其中，所述 影像感測晶片封裝結構包括一個晶片、一個牆體、複數 個導電體、複數個焊件、複數個黏著物及一個透明基材 ，所述晶片具有一感光面，所述感光面上設置有一影像 感測區及複數個晶片焊墊，所述複數個晶片焊墊圍繞所 述影像感測區設置，所述牆體由不透光且絕緣之材料製 成，所述牆體環繞所述影像感測區設置，所述牆體對應 所述複數個晶片焊墊開有複數個導通通孔，所述複數個 導電體通過所述複數個導通通孔與所述複數個晶片焊墊 〇9?12〇16〇 表單編號A0101 笫5頁/共30頁 1003444097-0 1360868 100年11月30日梭生替换κ 連接，所述透明基材通過所述黏著物連接於所述牆體上 並封閉所述影像感測區’所述透明基材對應所述複數個 導通通孔開有複數個連接通孔，所述焊件通過所述複數 個連接通孔與所述複數個導電體連接’所述焊件與所述 電路板電連接，所述影像感測晶片封裝結構之影像感測 區與所述通光孔相對應，所述影像感測晶片封裝結構粘 接於所述電路板之第二連接面上。 [0007] 一種影像感測晶片封裝方法，其包括以下步驟：提供一 個晶圓，該晶圓具有一個第一表面，該第一表面上具有 複數個影像感測區及電連接於所述影像感測區之複數個 晶片焊墊；在所述第一表面上形成一個絕緣層；去除所 述影像感測區及所述晶片焊墊上之絕緣層，使得於所述 絕緣層上對應於所述晶片焊墊之位置形成貫通所述絕緣 層之導通開孔’於所述絕緣層上對應於所述影像感測區 之位置形成貫通所述絕緣層之凹槽；於所述絕緣層上粘 結一個透光層；於所述透光層上對應於所述導通開孔之 位置形成貫穿透光層之連接開孔；於所述導通開孔及所 述連接開孔内填充導電材料，形成導電柱；於所述導電 柱上進行植球，形成複數個導電連接部；對所述晶圓及 透光層進行切割，得到複數個影像感測晶片封裝結構。 [0008] 由於本發明所提供之影像感測晶片封裝結構係直接於晶 片本體上進行封裝，所以該影像感測晶片封裝結構尺寸 更小，厚度更薄。 _2〇16〇 【實施方式】 下面將結合附圖對本發明實施方式作進一步之詳細描述 表單编號Α0101 第6頁/共30頁 1003444097-0 [0009] 1360,868 100年.11月30日按正替換頁 [0010] 請參閱圖2，本發明提供之— 種影像感測晶片封裝結構 1〇〇。影像感測晶片封裝結構1〇〇包括一個晶片1〇、一個 牆鑛20、複數個導電體3G、複數個焊⑽、複數個黏著 物5 〇及一個透明基材6 0。 [0011] 所述晶片10具有-感光面u，所述感光面u上設置有一 影像感測區11A及複數個晶片焊墊UB，所述複數個晶片 焊勢1關繞所述影像感測區11A設置1述牆體2〇由絕 緣之不透光之級#丨製成’料牆體20環繞所述影像感 測區11A設置’所述牆⑽對應所述複數個晶片焊堅ιιβ 開有複數個導通通孔2卜所述牆體20可以係預先製成之 具有複數個孔結構之部件，也可㈣直接在所述晶片感 光面11上形成之’例如塗層或印刷。本實施方式中，採 用將光阻劑塗於所述晶片感光面1!上，再通過曝光顯影 之方式在所述牆體2G上形成孔結構，露出影像感測區UA 及形成導通通孔21。 [0012] 所述複數個導電體3〇通過所述複數個導通通孔21與所述 複數個Ba >；烊塾11B連接1述導電體训可以係先做成與 導通通扎21相合之形狀，再插人所料數個導通通孔 2卜也可以係科電材料填綠所料通祕21形成。 本實施方式中’所述導電體3G係通過導電材料填充於所 述導通通孔21形成。所錢明肺_賴述複數個黏 著物5◦連接於所述牆體21上並封_述歸感測區11A , 所述透明基材60對應所述複數個導通通孔21開有複數個 097120160 連接通扎61。本實施方式巾，所述透縣材60採用玻璃 表單編號A0101 第7頁/共30頁 1003444097-0 1360868 100年11月30日梭i替換頁 製成，所述導電體30為圓柱體。 ]所述複數個焊件40通過所述複數個連接通孔61與所述複 數個體30連接。可以理解，所述連接通孔61中可以 係所述焊件40填充，也可以係由導電體3〇填充。本實施 方式中，所述焊件40為錫球，所述連接通孔61内由導電 體30填充。 [0014]請參閱圖3，為本發明第一實施方式提供之利用所述影像 感測晶片封裝結構1〇〇之一種相機模組2〇〇，其包括鏡座 110、至少一個鏡片120、電路板13〇及所述影像感測晶 片封裝結構100，所述鏡座110呈中空狀，其包括鏡筒 110a及底座ll〇b。本實施方式中，所述鏡片120固設於 所述鏡筒110a内。所述電路板ι30有第一連接面13〇a、 第二連接面130b及一通光孔i3〇c，所述通光孔i30c貫穿 第一連接面130a及第二連接面i3〇b，所述通光孔130c與 鏡筒110a同軸設置，所述第一連接面13〇a與所述底座 110b邊緣相連接。本實施方式中，採用粘接方式。所述 第一連接面130a上設置有導電觸片133。導電觸片133用 於與外部插槽（圖中未標示）相連接。所述影像感測晶片 射裝結構1 00之影像感測區11A與所述通光孔1 30c同軸設 置，所述影像感測晶片封裝結構1 〇〇粘接於所述電路板 130之第二連接面13〇b上。所述影像感測晶片封裝結構 100之焊件40與所述電路板130電連接，本實施方式中， 所述電路板130於第二連接面130b對應影像感測晶片封裝 結構100之焊件40設置有複數個電路板焊墊131，所述焊 件40焊接於所述電路板焊墊131上。所述電路板130可以 09712016° 表單编號A0101 第8頁/共30頁 1003444097-0 1360868 |100年.1^^0日梭正替^頁] 採用硬板或軟板。本實施方式中，所述電路板130採用尔 性電路板，利用密封膠19〇沿影像感測晶片封裝結構1 00 周邊進行密封，並將所述影像感測晶片封裝結構10 〇點接 於所述電路板130之第二連接面130b上。本實施方式中所 提供之相機模組200用於相機模組之插槽式組裝。 [0015] 請參閱圖4，為本發明第二實施方式提供之利用影像感測 晶片封裝結構100之一種相機模組300，其包括鏡座21〇 、至少一個鏡片220、電路板230及該影像感測晶片封裝 結構100。所述鏡座210包括鏡筒210a及底座210b。該相 機模組300與第一實施方式提供之相機模組200基本相同 。其不同之處在於，電路板230具有第一連接面230a、第 二連接面230b '通光孔230c及錫球233，該電路板230之 尺寸與所述鏡座210之外徑相當。第一連接面230a周邊與 所述鏡座210之底座210b邊緣相連接。本實施方式中，採 用粘接。錫球233設置於所述電路板23〇之第二連接面 230b上。該錫球233用於回焊時與外部元件（圖中未標示 )相連接。 [0016] 請參閱圖5，為本發明第三實施方式提供之利用影像感測 晶片封裝結構100之一種相機模組4〇〇，其包括鏡座31〇 、至少一個鏡片320、電路板330及該影像感測晶片封裝 結構100。所述鏡座310包括鏡筒31〇a及底座31〇1^該相 機模組400與與第一實施方式提供之相機模組2〇〇基本相 同。其不同之處在於，電路板330具有第一連接面330a、 第二連接面330b、通光孔330c及導電觸片333，電路板 330之第二連接面330b具有凸緣33〇d，導電觸片333設置 097120160 表單編號A0101 第9頁/共30頁 1003444097-0 1360868 100年.11月· 30日按i替換頁 於所述凸緣330d外周或端部。本實施方式中所述導電觸 片3 3 3設置於所述&緣330d端部。第·連接面330a周邊 與所述底座110b邊緣相粘接。 [0017] 本發明所提供之影像感測晶片封裝結構1〇〇之封裝方法。 [0018] (a)請參閱圖6及圖7，首先提供一晶圓500，該晶圓 500上具有一個第一表面501及一個第二表面502，該第 一表面501上具有複數個影像感測區503及電連接於所述 影像感測區503之複數個晶片焊墊504。該晶片焊墊504 用於為所述影像感測區503提供輸入輸出信號。 [0019] (b)請參閱圖8，在所述第一表面501上形成一層絕緣層 510。該絕緣層510可以係防焊膜或者光阻層，該絕緣層 510可以通過塗布或者印刷之方式形成。 [0020] ( c )請參閱圖9，去除所述影像感測區5 0 3及晶片焊墊 504上之絕緣層510，以使所述影像感測區503及晶片焊 墊504露出。在所述絕緣層510上形成貫通絕緣層510之 複數個導通開孔511，所述導通開孔511之間不連通。所 述絕緣層510繞所述影像感測區503形成貫通所述絕緣層 510之凹槽512。其中，當所述絕緣層510係光阻層時， 則該導通開孔511及凹槽512需通過曝光顯影之方式形成 ;當所述絕緣層510係不透明之防焊膜時’則該導通開孔 511及凹槽512町通過蝕刻方式形成。 [0021] (d)請參閱圖10,在所述晶圓500上貼合一個與晶圓 500形狀相似之透光層520 ’所述透光層520利用膠590粘 合在絕緣層510上。所述透光層520可防止雜質進入所述 097120160 表單編號A0101 第10頁/共30頁 1003444097-0 1360868 [0022] [0023] [0024] [0025] 1100年U.月.30日赃_^頁 影像感測區503，對所述影像感測區5〇3起保護作用《所 述透光層520可以係玻璃片。 (e) 請參閱圖11，減薄所述透光層520，使之具有預定 厚度。可通過蝕刻之方式進行該減薄過程。該減薄過程 之目之在於便於後續制程處理，並可降低影像感測晶片 之封裝高度。 (f) 請參閱圖12，於所述透光層520上對應於所述絕緣 層510上之導通開孔511之位置形成貫穿透光層520之連 接開孔521，使所述晶片焊墊504露出，於所述透光層 520上形成所述連接開孔521係通過蝕刻或者雷射切割之 方式實現之。 (g) 請參閱圖13，於所述導通開孔511及所述連接開孔 521内填充導電材料，使導電材料填滿所述導通開孔511 及所述連接開孔521，形成導電柱530。該導電材料包括 但不限於錫及錯之至少一種，可通過電鍵或網印之方式 進行填充。可以理解，對所述導通開孔511及所述連接開 孔521中導電材料之填充，可以於所述透光層520粘合在 絕緣層510前後分兩次填充到所述導通開孔511及所述連 接開孔521。 (h) 請參閲圖14，於所述導電柱530上進行植球，形成 複數個導電連接部540。所述導電連接部540通過導電柱 530與所述晶片焊墊504形成電性連接。所述導電連接部 540可以係金屬球或金屬凸塊，優選地，該導電連接部 540為錫球。所述導電連接部540用於對所述影像感測區 097120160 表單编號Α0101 第11頁/共30頁 1003444097-0 1360868 100年11月30日修正替換頁 503與外部電路進行電性連接。 [〇〇26] ( i )請參閱圖15及圖16，一併切割所述晶圓500及覆蓋 於其上之透光層520，得到複數個影像感測晶片封裝結構 100 ° [0027] 由於本發明所提供之影像感測晶片封裝結構係直接於晶 片.本體上進行封裝，所以該影像感測晶片封裝結構尺寸 更小，厚度更薄。 [0028] 綜上所述’本發明確已符合發明專利之要件，遂依法提 出專利申請。惟，以上所述者僅為本發明之較佳實施方 式’自不能以此限制本案之申請專利範圍。舉凡熟系本 案技藝之人士挺依本發明之精神所作之等效修飾或變化 ，皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 [0029] 圖1係先前技術提供之一種影像感測晶片封裝結構示音圖 [0030] 圖2係本發明提供之一種影像感測晶片封裝結構示竟圖； [0031] 圖3係本發明第一實施方式提供之相機模組之示意圖； [0032] 圖4係本發明第二實施方式提供之相機模級之示音圖； [0033] 圖5係本發明第三實施方式提供之相機模級之示专圖； [0034] 圖6至圖1 6係本發明之影像感測晶片封骏方法流程之示意 圖。 【主要元件符號說明】 [°°35]影像感測晶片封裝結構：i、1〇〇 097120160 表單编號A0101 1003444097-0 第12頁/共30賓 1360.868 [0036] 玻璃片：2 [0037] 影像感測晶片.3 [0038] 影像感測區：3A、11A [0039] 晶片焊墊：3B、11B [0040] 基板：4 [0041] 頂面：4a [0042] 凸緣：4c [0043] 基板焊墊：4D [0044] 導線：5 [0045] 晶片.1 0 [0046] 感光面：11 [0047] 牆體：20 [0048] 導通通孔：21 [0049] 導電體：30 [0050] 焊件：40 [0051] 黏著物：5 0 [0052] 透明基材：60 [0053] 連接通孔：61 [0054] 相機模組：200 ' 300、400 097120160 表單編號A0101 第13頁/共30頁 100年.11月· 30日梭正替換頁 1003444097-0 1360868 100年11月30日梭ΐ替換頁 [0055] 鏡座：110、210、310 [0056] 鏡筒：110a、210a、310a [0057] 底座：110b、210b、310b [0058] 鏡片：120、220、320 [0059] 電路板：130、230、330 [0060] 第一連接面：130a、230a、330a [0061] 第二連接面：130b、230b、330b [0062] 通光孔：130c、230c、330c [0063] 電路板焊墊：131 [0064] 導電觸片：133、333 [0065] 密封膠：190 [0066] 錫球：233 [0067] 凸緣：330d [0068] 晶圓· 5 0 0 [0069] 第一表面：501 [0070] 第二表面：502 [0071] 影像感測區：503 [0072] j 晶片焊墊：504 [0073] 絕緣層：510 097120160 表單编號A0101 第14頁/共30頁 1003444097-0 1360868 100年.11月30日梭正替換頁 [0074] 導通開扎：511 [0075] 凹槽：51 2 [0076] 透光層：520 [0077] 連接開扎：521 [0078] 導電柱：530 [0079] 導電連接部：540 [0080] 膠：590 097120160 表單編號A0101 第15頁/共30頁 1003444097-0100年十一月1360868 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to an image sensing chip package structure and method, and a camera module to which the package structure is applied. [Prior Art] [0002] Referring to FIG. 1, a prior image sensing chip package structure 1 encloses a glass sheet 2, an image sensing wafer 3, and a substrate 4. The image sensing wafer 3 has an image sensing area 3A and a plurality of wafer pads 3B'. The plurality of wafer pads 3B are disposed around the image sensing area 3A. The substrate 4 has a top surface 4a and a flange 4c' formed on the edge of the substrate 4, and the top surface 4a is adhered to the surface of the image sensing wafer 3 away from the image sensing area 3A. The top surface 4a of the substrate 4 is provided with a number of substrate pads 4D corresponding to the wafer pads 3B, and the wafer pads 3B are electrically connected to the substrate pads 4D by wires 5. The glass sheet 2 is adhered to the flange 4c of the substrate 4 and covers the image sensing area 3A. [0003] However, such an image sensing chip package structure 1 is packaged by fixing the image sensing wafer 3 to the substrate 4, since the substrate 4 itself has a certain thickness and leaves a substrate corresponding to the wafer pad 3B. Pad 4]), so the height and area of the package are increased invisibly, making the package size larger. SUMMARY OF THE INVENTION It is necessary to provide a small-sized image sensing chip package structure. [0005] 097120160 - image (4) a package package structure comprising a wafer and a transparent substrate, the wafer has a photosensitive surface, the photosensitive surface is provided with an image sensing area and a plurality of wafer soldering heat,巧鲆登 The plurality of wafer pads Form No. A0101 帛 4 pages / Total 30 pages 1003444097-0 1360868 JOO year November 30th around the image sensing area, wherein the image sensing chip package The structure comprises a wall, a plurality of electrical conductors, a plurality of weldments and a plurality of adhesives, the wall being made of an opaque and insulating material, the wall being disposed on the photosensitive surface and surrounding The image sensing area is configured to: the wall body has a plurality of conductive vias corresponding to the plurality of wafer pads. The plurality of conductive bodies pass through the plurality of conductive vias and the plurality of wafer pads Connecting, the transparent substrate is connected to the wall through the adhesive and enclosing the image sensing area, and the transparent substrate has a plurality of connecting through holes corresponding to the plurality of conductive through holes. The weldment passes through the plural Connecting a through hole to the plurality of electrical conductors 0 * [0006] A camera module comprising a lens holder, at least one lens, a circuit board, and an image sensing chip package structure, wherein the lens holder is hollow The lens board includes a lens barrel and a base, wherein the lens is fixed in the lens barrel, the circuit board has a first connecting surface, a second connecting surface and a light passing hole, and the light passing hole penetrates the first connecting surface And the second connecting surface is disposed coaxially with the lens barrel, and the first connecting surface is connected to the edge of the base, wherein the image sensing chip package structure comprises a wafer, a wall, and a plurality of An electric conductor, a plurality of soldering members, a plurality of adhesives, and a transparent substrate, wherein the wafer has a photosensitive surface, the photosensitive surface is provided with an image sensing area and a plurality of wafer pads, and the plurality of wafer pads are soldered a pad is disposed around the image sensing area, the wall is made of an opaque and insulating material, the wall is disposed around the image sensing area, and the wall corresponds to the plurality of wafer pads Opening a plurality of conductive vias, A plurality of electrical conductors pass through the plurality of conductive vias and the plurality of wafer pads 〇9?12〇16〇Form No. A0101 笫5 pages/total 30 pages 1003444097-0 1360868 Sonic replacement on November 30, 100 a κ connection, the transparent substrate is connected to the wall through the adhesive and encloses the image sensing area. The transparent substrate has a plurality of connecting through holes corresponding to the plurality of conductive through holes. The soldering member is electrically connected to the plurality of electrical conductors through the plurality of connecting vias, and the soldering member is electrically connected to the circuit board, and the image sensing area of the image sensing chip package structure and the pass Corresponding to the light holes, the image sensing chip package structure is bonded to the second connection surface of the circuit board. [0007] An image sensing chip packaging method includes the steps of: providing a wafer having a first surface having a plurality of image sensing regions and electrically connected to the image sense a plurality of wafer pads of the measurement area; forming an insulating layer on the first surface; removing the image sensing region and the insulating layer on the wafer pad such that the insulating layer corresponds to the wafer Forming a conductive opening through the insulating layer to form a recess penetrating the insulating layer on the insulating layer corresponding to the image sensing region; bonding a bonding layer on the insulating layer a light-transmissive layer; a connection opening penetrating the light-transmissive layer is formed on the light-transmitting layer corresponding to the position of the conductive opening; and the conductive opening is filled in the conductive opening and the connecting opening to form a conductive column And implanting a ball on the conductive pillar to form a plurality of conductive connecting portions; cutting the wafer and the light transmitting layer to obtain a plurality of image sensing chip package structures. Since the image sensing chip package structure provided by the present invention is directly packaged on the wafer body, the image sensing chip package structure is smaller in size and thinner in thickness. _2〇16〇 [Embodiment] Embodiments of the present invention will be further described in detail below with reference to the accompanying drawings. Form No. 1010101 Page 6/Total 30 Page 1003444097-0 [0009] 1360,868 100. November 30 Positive Replacement Page [0010] Referring to FIG. 2, the present invention provides an image sensing chip package structure. The image sensing chip package structure 1 includes a wafer 1 , a wall ore 20 , a plurality of electrical conductors 3G , a plurality of solders ( 10 ), a plurality of adhesives 5 , and a transparent substrate 60 . [0011] The wafer 10 has a photosensitive surface u, and an image sensing area 11A and a plurality of wafer pads UB are disposed on the photosensitive surface u, and the plurality of wafer soldering surfaces 1 are wound around the image sensing area. 11A is set to 1 wall 2 〇 made of insulating opaque grade #丨' material wall 20 is arranged around the image sensing area 11A 'the wall (10) corresponding to the plurality of wafers welding ιιβ The plurality of through vias 2 may be formed into a pre-formed component having a plurality of aperture structures, or (iv) formed directly on the wafer photosensitive surface 11 by, for example, coating or printing. In this embodiment, a photoresist is applied to the photosensitive surface 1 of the wafer, and a hole structure is formed on the wall 2G by exposure and development to expose the image sensing area UA and form the through via 21 . . [0012] the plurality of electrical conductors 3 〇 are connected to the plurality of Ba gt; 烊塾 11B through the plurality of conductive vias 21, and the conductive body training may be first made to be in contact with the conductive via 21 The shape, and then insert a number of conductive through holes 2 can also be formed by the electrical material filled with green material. In the present embodiment, the conductor 3G is formed by filling a conductive via hole 21 with a conductive material. The plurality of adhesives 5 ◦ are connected to the wall 21 and sealed to the sensing region 11A, and the transparent substrate 60 has a plurality of conductive vias 21 corresponding to the plurality of conductive vias 21 097120160 Connected to the 61. In the embodiment of the present invention, the permeable material 60 is made of a glass form No. A0101, page 7 of 30, 1003444097-0, 1360868, on November 30, 100, and the conductor 30 is a cylinder. The plurality of weldments 40 are connected to the plurality of individuals 30 through the plurality of connecting through holes 61. It can be understood that the connecting through hole 61 may be filled with the weldment 40 or may be filled with the electric conductor 3〇. In the present embodiment, the weldment 40 is a solder ball, and the connection through hole 61 is filled with a conductor 30. [0014] Please refer to FIG. 3, which illustrates a camera module 2A using the image sensing chip package structure according to a first embodiment of the present invention, which includes a lens holder 110, at least one lens 120, and a circuit. The board 13 and the image sensing chip package structure 100 are hollow, and include a lens barrel 110a and a base 11b. In the present embodiment, the lens 120 is fixed in the lens barrel 110a. The circuit board ι30 has a first connecting surface 13a, a second connecting surface 130b, and a light passing hole i3〇c. The light passing hole i30c extends through the first connecting surface 130a and the second connecting surface i3〇b. The light passing hole 130c is disposed coaxially with the lens barrel 110a, and the first connecting surface 13〇a is connected to the edge of the base 110b. In the present embodiment, a bonding method is employed. A conductive contact piece 133 is disposed on the first connection surface 130a. The conductive contact 133 is for connection to an external slot (not shown). The image sensing area 11A of the image sensing wafer projecting structure 100 is coaxially disposed with the light passing hole 130c, and the image sensing chip package structure 1 is bonded to the second of the circuit board 130. Connected to the surface 13〇b. The soldering member 40 of the image sensing chip package structure 100 is electrically connected to the circuit board 130. In the embodiment, the circuit board 130 corresponds to the image sensing chip package structure 100 of the soldering member 40 on the second connecting surface 130b. A plurality of circuit board pads 131 are provided, and the soldering members 40 are soldered to the circuit board pads 131. The circuit board 130 can be 09712016° Form No. A0101 Page 8 / Total 30 pages 1003444097-0 1360868 | 100 years. 1 ^ ^ 0 day shuttle is replaced by ^ page] using a hard board or a soft board. In this embodiment, the circuit board 130 is made of a solder circuit board, sealed by the periphery of the image sensing chip package structure 100, and the image sensing chip package structure is connected to the device. On the second connection surface 130b of the circuit board 130. The camera module 200 provided in this embodiment is used for slot assembly of a camera module. 4 is a camera module 300 for using an image sensing chip package structure 100 according to a second embodiment of the present invention, which includes a lens holder 21, at least one lens 220, a circuit board 230, and the image. The wafer package structure 100 is sensed. The lens holder 210 includes a lens barrel 210a and a base 210b. The camera module 300 is substantially identical to the camera module 200 provided in the first embodiment. The difference is that the circuit board 230 has a first connection surface 230a, a second connection surface 230b, a light-passing hole 230c, and a solder ball 233. The size of the circuit board 230 is equivalent to the outer diameter of the lens holder 210. The periphery of the first connecting surface 230a is connected to the edge of the base 210b of the lens holder 210. In the present embodiment, bonding is employed. A solder ball 233 is disposed on the second connection surface 230b of the circuit board 23A. The solder ball 233 is used for reflow soldering to external components (not shown). [0016] Please refer to FIG. 5, which is a camera module 4 of an image sensing chip package structure 100 according to a third embodiment of the present invention, which includes a lens holder 31, at least one lens 320, a circuit board 330, and The image senses the wafer package structure 100. The lens holder 310 includes a lens barrel 31A and a base 31. The camera module 400 is substantially the same as the camera module 2A provided in the first embodiment. The difference is that the circuit board 330 has a first connection surface 330a, a second connection surface 330b, a light-passing hole 330c, and a conductive contact 333. The second connection surface 330b of the circuit board 330 has a flange 33〇d, and the conductive contact Sheet 333 is set 097120160 Form No. A0101 Page 9/Total 30 Page 1003444097-0 1360868 100 years. November 30th is replaced by i on the outer circumference or end of the flange 330d. In the embodiment, the conductive contact piece 323 is disposed at an end of the & edge 330d. The periphery of the first connecting surface 330a is bonded to the edge of the base 110b. [0017] The image sensing chip package structure of the present invention provides a packaging method. [0018] (a) Referring to FIG. 6 and FIG. 7, a wafer 500 is first provided. The wafer 500 has a first surface 501 and a second surface 502. The first surface 501 has a plurality of image senses. The measuring area 503 and a plurality of wafer pads 504 electrically connected to the image sensing area 503. The die pad 504 is configured to provide an input and output signal for the image sensing region 503. [0019] (b) Referring to FIG. 8, an insulating layer 510 is formed on the first surface 501. The insulating layer 510 may be a solder resist film or a photoresist layer, and the insulating layer 510 may be formed by coating or printing. [0020] (c) Referring to FIG. 9, the image sensing region 503 and the insulating layer 510 on the die pad 504 are removed to expose the image sensing region 503 and the wafer pad 504. A plurality of conductive vias 511 penetrating the insulating layer 510 are formed on the insulating layer 510, and the conductive vias 511 are not in communication with each other. The insulating layer 510 forms a recess 512 extending through the insulating layer 510 around the image sensing region 503. Wherein, when the insulating layer 510 is a photoresist layer, the conductive via 511 and the recess 512 are formed by exposure and development; when the insulating layer 510 is an opaque solder resist film, the conductive opening is turned on. The holes 511 and the grooves 512 are formed by etching. [0021] (d) Referring to FIG. 10, a light transmissive layer 520 similar in shape to the wafer 500 is attached to the wafer 500. The light transmissive layer 520 is adhered to the insulating layer 510 by a glue 590. The light transmissive layer 520 can prevent impurities from entering the 097120160. Form No. A0101 Page 10 / Total 30 Page 1003444097-0 1360868 [0023] [0024] [0025] 1100 U. Month. 30th 赃 _^ The page image sensing area 503 protects the image sensing area 5〇3. The light transmitting layer 520 may be a glass piece. (e) Referring to Figure 11, the light transmissive layer 520 is thinned to have a predetermined thickness. This thinning process can be performed by etching. The purpose of the thinning process is to facilitate subsequent processing and to reduce the package height of the image sensing wafer. (f) Referring to FIG. 12, a connection opening 521 is formed through the transparent layer 520 at a position corresponding to the conductive opening 511 of the insulating layer 510 on the transparent layer 520, so that the wafer pad 504 is formed. Exposed, the connection opening 521 is formed on the light transmissive layer 520 by etching or laser cutting. (g) Referring to FIG. 13, the conductive opening 511 and the connecting opening 521 are filled with a conductive material, and the conductive material fills the conductive opening 511 and the connecting opening 521 to form a conductive post 530. . The conductive material includes, but is not limited to, at least one of tin and offset, and can be filled by means of a key or screen printing. It can be understood that the filling of the conductive material in the conductive opening 511 and the connecting opening 521 can be filled into the conductive opening 511 twice before and after the transparent layer 520 is adhered to the insulating layer 510. The connecting opening 521. (h) Referring to Figure 14, ball implantation is performed on the conductive post 530 to form a plurality of conductive connections 540. The conductive connection portion 540 is electrically connected to the wafer pad 504 through the conductive post 530. The conductive connection portion 540 may be a metal ball or a metal bump. Preferably, the conductive connection portion 540 is a solder ball. The conductive connecting portion 540 is used to electrically connect the external sensing circuit to the image sensing area 097120160, the form number Α0101, the first page, the third page, the 1003444097-0 1360868, and the replacement page 503 of November 30, 00. [0026] (i) Referring to FIG. 15 and FIG. 16, the wafer 500 and the light transmissive layer 520 overlying the wafer 500 are cut together to obtain a plurality of image sensing chip package structures 100[0027] The image sensing chip package structure provided by the invention is directly packaged on the wafer body, so the image sensing chip package structure is smaller in size and thinner in thickness. [0028] In summary, the present invention has indeed met the requirements of the invention patent, and the patent application is filed according to law. However, the above description is only a preferred embodiment of the present invention, which is not intended to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by those skilled in the art will be within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS [0029] FIG. 1 is a schematic diagram of an image sensing chip package structure provided by the prior art. [0030] FIG. 2 is a schematic diagram of an image sensing chip package structure provided by the present invention; [0031] 3 is a schematic diagram of a camera module according to a first embodiment of the present invention; [0032] FIG. 4 is a schematic diagram of a camera module according to a second embodiment of the present invention; [0033] FIG. 5 is a third embodiment of the present invention The schematic diagram of the camera module provided by the method; [0034] FIG. 6 to FIG. 16 are schematic diagrams showing the flow of the image sensing chip sealing method of the present invention. [Description of main component symbols] [°°35] Image sensing chip package structure: i, 1〇〇097120160 Form No. A0101 1003444097-0 Page 12/Total 30 Guests 13680.68 [0036] Glass: 2 [0037] Image Sensing wafer. 3 [0038] Image sensing area: 3A, 11A [1043] Wafer pad: 3B, 11B [0040] Substrate: 4 [0041] Top surface: 4a [0042] Flange: 4c [0043] Substrate Pad: 4D [0044] Wire: 5 [0045] Wafer. 1 0 [0046] Photosensitive surface: 11 [0047] Wall: 20 [0048] Conducting via: 21 [0049] Conductor: 30 [0050] Soldering Item: 40 [0051] Adhesive: 5 0 [0052] Transparent substrate: 60 [0053] Connection through hole: 61 [0054] Camera module: 200 ' 300, 400 097120160 Form number A0101 Page 13 of 30 100 years, November, 30th, shuttle replacement page 1003444097-0 1360868 November 30, 100, shuttlecock replacement page [0055] Mirror base: 110, 210, 310 [0056] Tube: 110a, 210a, 310a [0057] Base: 110b, 210b, 310b [0058] Lens: 120, 220, 320 [0059] Circuit board: 130, 230, 330 [0060] First connection surface: 130a, 230a, 330a [0061] Second connection surface: 13 0b, 230b, 330b [0062] Light-passing holes: 130c, 230c, 330c [0063] Circuit board pads: 131 [0064] Conductive contacts: 133, 333 [0065] Sealant: 190 [0066] Tin ball: 233 [0067] Flange: 330d [0068] Wafer·500 [0069] First surface: 501 [0070] Second surface: 502 [0071] Image sensing area: 503 [0072] j Wafer pad: 504 [0073] Insulation: 510 097120160 Form No. A0101 Page 14 / Total 30 Page 1003444097-0 1360868 100 years. November 30th Shuttle replacement page [0074] Conduction opening: 511 [0075] Groove: 51 2 Light transmissive layer: 520 [0077] Connection opening: 521 [0078] Conductive column: 530 [0079] Conductive connection: 540 [0080] Glue: 590 097120160 Form number A0101 Page 15 / Total 30 pages 1003444097- 0