1360720r, « 六、發明說明： 【發明所屬之技術領域Γ:汚声』 .;r [0001] 本發明涉及一種曝光光罩及一種利用該曝光光罩製造薄 膜圖案層之方法。 【先前技術】 [0002] 目前製造薄膜圖案層之一種方法係喷墨法，該喷墨法為 提供一具有由複數分隔牆限定之複數收容空間之基板， 使用一喷墨裝置將形成薄膜材料之墨水喷入該複數收容 空間内，墨水被固化後於該基板上形成預定之薄膜圖案 層。由於製程大量簡化，材料使用經濟，因此成本大幅 降低。 [0003] 先前噴墨法技術中，該複數分隔牆藉由於基板上塗敷光 阻材料，將具有預定圖案之光罩設於光阻材料上，進行 曝光及顯影，或加上姓刻製程，而形成於基板上。為了 形成薄膜圖案，複數收容空間之分佈需與薄膜圖案分佈 一致，因此’對應於複數收容空間之光阻材料係被去除 ，而曝光光罩之功能區域分佈_也要對應於收容空間之分 佈。一般之曝光光罩對應於複數收容空間之複數功能區 域係呈矩形狀。故，限定每個收容空間之分隔牆圍成一 矩形。 [0004] 惟’藉由一般曝光光罩曝光後光阻材料進行顯影步驟以 去除薄棋圊案部分之光阻材料時’該顯影步驟係於化學 溶液中進行’其由被曝光後光阻材料自上而下的一個顯 影/蝕刻過程。故圍成矩形之分隔牆之長邊（或短邊）沿 垂直於該矩形之長邊（或短邊）之截面為一梯形，該梯 096107458 表單編號A0101 第3頁/共19頁 1003295121-0 1360720 100年08月15日修正替換頁 形之一腰與基板之夾角為一個銳角，如圖1所示。而 矩形分隔牆沿該矩形之角平分線之截面近似為一矩 形’其内角02接近90度，如圖2所示，且0 2大於0 1。 由於墨水對牆之接觸角為一定值，牆的角度02及01不同 ，墨水對應的高度也不同，因此，會造成墨水被固化後 所形成之薄膜圖案層之厚度不均勻。 【發明内容】 [0005] 有鑒於此，有必要提供一種可提高薄膜圖案層厚度均勻 性之曝光光罩及一種薄膜圖案層之製造方法。 [0006] 一種曝光光罩，包括複數光罩單元，其中，各光罩單元 包括一第一區域及一包圍該第一區域之第二區域。該第 二區域在與第一區域之交界處具有至少一個向第一區域 内部突出之突出區域，使該第二區域之一部分三邊被第 一區域包圍。 [0007] —種薄膜圖案層之製造方法，包括以下步驟：將一曝光 光罩設於一表面帶有光阻材料層之基板與一曝光機光源 間，該曝光光罩包括複數光罩單元，各光罩單元包括一 第一區域及一包圍該第一區域之第二區域，該第二區域 在與第一區域的交界處具有至少一個向第一區域内部突 出之突出區域，使該第二區域之一部分三邊被第一區域 包圍；曝光該光阻材料層；利用顯影方式形成設立於基 板表面之複數分隔牆，該複數分隔牆限定複數收容空間 ;填充墨水至該複數收容空間内；及固化墨水以於複數 收容空間内形成複數薄膜層。 [0008] 096107458 所述之曝光光罩，藉由該至少光罩單元第二區域之一部 表單编號A0101 第4頁/共19頁 1003295121-0 1360720 >1 - ^ . .1〇〇年.〇8月15日/.修正替&頁 分三邊被第一區域包圍，而使該第二區域之該部分對應 之光阻材料於顯影過程得以被 '保溜&，： '1 . [0009] 所述之薄膜圖案層製造方法，由於與曝光光罩之第二區 域該部分對應之光阻材料於顯影後被保留下來，因此， 在顯影後會於限定收容空間之分隔牆之相應部分形成斜 坡，使固化後的薄膜層之厚度均勻性提高。 [0010] 【實施方式】 下面將結合附圖對本發明實施例作進一步之詳細說明。 φ [0011] 參 請一併參閱圖3及圖4,本發明第一實施例提供一種曝光 光罩100，該曝光光罩100包括複數光罩單元102，各光 罩單元102呈矩形狀，該各光罩單元102包括一第一區域 1022及一第二區域1024,其中該第一區域1 022被第二區 域1 024包圍。該第二區域1024在與第一區域1 022之交界 處，具有八個向第一區域1022内部突出之突出區域1026 ，使該第二區域1 024之一部分三邊被第一區域1 022包圍 。本實施例中，該突出區域1 026係位於第一區域1022之 端角部104内，如圖4所示。.各突出區域1 026之形狀為方 形。 [0012] 本實施中之曝光光罩100之設計係針對使用正型光阻材料 來形成分隔牆的情形。對於正型光阻材料，由於正型光 阻材料被曝光的部分於顯影過程被去除，因此，本實施 例之曝光光罩100之第一區域1022可透過用於曝光之光線 ，而複數第二區域1024可遮擋用於曝光之光線。 [0013] 請參閱圖5，本發明第二實施例提供一種曝光光罩200。 096107458 表單編號A0101 第5頁/共19頁 1003295121-0 1360720 本實施中之曝光光罩200之設計係針對使用負塑光11 且材料 來形成分隔牆的情形。對於負型光阻材採·’—由於負裂光 阻材料未被曝光的部分於顯影過程被去除，因此’本實 施例之曝光光罩200之各曝光單元202之第一區域2022可 遮擋用於曝光之光線，而第二區域2024可透過用於曝光 之光線且突出區域2026係位於第一區域2022之端角部 204 内。 · [0014] 請一併參閱圖6及圖7，本發明第三實施例提供一種曝光 光罩300，該曝光光罩300係一灰階式之光罩設計’包括 複數光罩單元302，其中，本實施例提供之曝光光罩300 與第一實施例及第二實施例提供之曝光光罩100，200不 同之處在於，該光罩單元302之第二區域3024之突出區域 3026之寬度較第一實施例及第二實施例中之突出區域 1 026及2026之寬度要小，惟突出區域3026之數量比突出 區域1 026及2026之數量要多，且突出區域3026係位於第 一區域3022之端角部304内。 [0015] 請參閱圖8，本發明第四實施例提供一種曝光光罩4〇〇， 各光罩單元402之第二區域4024之突出區域4026之寬度 與第三實施例之突出區域3026之寬度相近，惟本實施例 之第一區域4022之四個端角部404被部分切除，突出區域 4026沿切除之切線向第一區域4022内部突出且位於端角 部4 0 4内。 [0016] 需要指出的是’上述實施例提供之曝光光罩第二區域之 突出區域之形狀可為其他形狀，如三角形，半圓形，梯 形等》 096107458 表單編號A0101 第6頁/共19頁 1003295121-0 1360720 _______1360720r, «VI. Description of the Invention: [Technical Field of the Invention: Smudges]; r [0001] The present invention relates to an exposure mask and a method of manufacturing a film pattern layer using the exposure mask. [Prior Art] [0002] One method of fabricating a thin film pattern layer at present is an ink jet method for providing a substrate having a plurality of housing spaces defined by a plurality of partition walls, which are formed using an ink jet device. The ink is sprayed into the plurality of receiving spaces, and the ink is solidified to form a predetermined film pattern layer on the substrate. Due to the simplification of the process and the economical use of materials, the cost is greatly reduced. [0003] In the prior art inkjet method, the plurality of partition walls are provided with a predetermined pattern of photomasks on the photoresist material for exposure and development, or a process of surname etching, by applying a photoresist material on the substrate. Formed on the substrate. In order to form a thin film pattern, the distribution of the plurality of accommodating spaces is required to be consistent with the distribution of the film pattern, so that the photoresist material corresponding to the plurality of accommodating spaces is removed, and the functional area distribution of the reticle is also corresponding to the distribution of the accommodating spaces. The general exposure mask corresponds to a plurality of functional areas in a plurality of housing spaces in a rectangular shape. Therefore, the partition wall defining each of the accommodating spaces is surrounded by a rectangle. [0004] Only when the photoresist step is exposed by a general exposure mask to perform a development step to remove the photoresist material of the thin chessboard portion, the development step is performed in a chemical solution, which is formed by the exposed photoresist material. A development/etching process from top to bottom. Therefore, the long side (or short side) of the dividing wall enclosing the rectangle is a trapezoid along a section perpendicular to the long side (or short side) of the rectangle, the ladder 096107458 Form No. A0101 Page 3 / Total 19 Page 1003295121-0 1360720 On August 15, 100, the angle between one of the waist and the substrate was corrected to be an acute angle, as shown in Figure 1. The section of the rectangular dividing wall along the bisector of the corner of the rectangle is approximately a rectangular shape 'the inner angle 02 is close to 90 degrees, as shown in Fig. 2, and 0 2 is greater than 0 1 . Since the contact angle of the ink to the wall is a certain value, the angles of the walls are different from 02 and 01, and the heights of the inks are also different. Therefore, the thickness of the film pattern layer formed after the ink is cured is not uniform. SUMMARY OF THE INVENTION [0005] In view of the above, it is necessary to provide an exposure mask that can improve the thickness uniformity of a thin film pattern layer and a method of manufacturing a thin film pattern layer. An exposure reticle includes a plurality of reticle units, wherein each reticle unit includes a first area and a second area surrounding the first area. The second region has at least one protruding region projecting toward the interior of the first region at the interface with the first region such that a portion of the three sides of the second region are surrounded by the first region. [0007] A method for manufacturing a thin film pattern layer, comprising the steps of: providing an exposure mask between a substrate having a photoresist layer and a surface of an exposure machine, the exposure mask comprising a plurality of mask units, Each reticle unit includes a first area and a second area surrounding the first area, the second area having at least one protruding area protruding toward the inside of the first area at a boundary with the first area, such that the second area One of the three sides of the region is surrounded by the first region; the photoresist layer is exposed; a plurality of partition walls are formed on the surface of the substrate by a developing method, the plurality of partition walls defining a plurality of receiving spaces; and the ink is filled into the plurality of receiving spaces; The ink is cured to form a plurality of film layers in the plurality of receiving spaces. [0008] The exposure reticle of 096107458, by the at least one part of the second area of the reticle unit, form number A0101, page 4 / total 19 pages 1003295121-0 1360720 > 1 - ^ . .1 〇August 15th.. Correction & page is surrounded by the first area, and the photoresist material corresponding to the part of the second area is slid & [0009] The method for manufacturing a thin film pattern layer, wherein the photoresist material corresponding to the portion of the second region of the exposure mask is retained after development, and therefore, after development, the partition wall defining the receiving space is The corresponding portion forms a slope to increase the thickness uniformity of the cured film layer. [Embodiment] Hereinafter, embodiments of the present invention will be further described in detail with reference to the accompanying drawings. [0011] Referring to FIG. 3 and FIG. 4 together, a first embodiment of the present invention provides an exposure mask 100. The exposure mask 100 includes a plurality of mask units 102, and each of the mask units 102 has a rectangular shape. Each reticle unit 102 includes a first region 1022 and a second region 1024, wherein the first region 1 022 is surrounded by the second region 1 024. The second region 1024 has eight protruding regions 1026 projecting toward the interior of the first region 1022 at the interface with the first region 1 022 such that a portion of the three sides of the second region 1 024 are surrounded by the first region 1 022. In this embodiment, the protruding region 1 026 is located in the end corner portion 104 of the first region 1022, as shown in FIG. The shape of each protruding area 1 026 is a square shape. [0012] The design of the exposure mask 100 in the present embodiment is directed to the case of forming a partition wall using a positive photoresist material. For the positive photoresist material, since the exposed portion of the positive photoresist material is removed during the development process, the first region 1022 of the exposure mask 100 of the present embodiment can transmit the light for exposure, and the second portion Area 1024 blocks the light used for exposure. Referring to FIG. 5, a second embodiment of the present invention provides an exposure mask 200. 096107458 Form No. A0101 Page 5 of 19 1003295121-0 1360720 The design of the exposure mask 200 in this embodiment is directed to the case where the negative plastic light 11 is used and the material is used to form the partition wall. For the negative-type photoresist material, the first region 2022 of each exposure unit 202 of the exposure mask 200 of the present embodiment can be shielded because the portion of the negative-resistance photoresist material that is not exposed is removed during the development process. In the exposed light, the second region 2024 is permeable to light for exposure and the protruding region 2026 is located within the end corner 204 of the first region 2022. [0014] Please refer to FIG. 6 and FIG. 7 together. The third embodiment of the present invention provides an exposure mask 300, which is a gray scale reticle design 'including a plurality of reticle units 302, wherein The exposure mask 300 provided in this embodiment is different from the exposure masks 100, 200 provided in the first embodiment and the second embodiment in that the width of the protruding region 3026 of the second region 3024 of the mask unit 302 is different. The widths of the protruding regions 1 026 and 2026 in the first embodiment and the second embodiment are small, but the number of protruding regions 3026 is larger than the number of protruding regions 1 026 and 2026, and the protruding region 3026 is located in the first region 3022. In the end corner portion 304. Referring to FIG. 8, a fourth embodiment of the present invention provides an exposure mask 4, a width of a protruding region 4026 of a second region 4024 of each mask unit 402, and a width of a protruding region 3026 of the third embodiment. Similarly, the four end corners 404 of the first region 4022 of the present embodiment are partially cut away, and the protruding region 4026 protrudes toward the inside of the first region 4022 along the cut tangential line and is located in the end corner portion 104. [0016] It should be noted that the shape of the protruding region of the second region of the exposure mask provided by the above embodiment may be other shapes, such as a triangle, a semicircle, a trapezoid, etc. 096107458 Form No. A0101 Page 6 of 19 1003295121-0 1360720 _______
" ： . l1QQ^〇^i~i5B" : . l1QQ^〇^i~i5B
[0017] 本發明第四實施例提供一種薄膜圖案層之製造方法，該 一 方法包括以下步驟： Ί.[0017] A fourth embodiment of the present invention provides a method of fabricating a thin film pattern layer, the method comprising the following steps:
[0018] U〇〇a)將一曝光光罩設於一表面帶有光阻材料層之基 板與一曝光機光源間； [0019] ( 200a)曝光該光阻材料層； [0020] ( 300a)利用顯影方式形成設立於基板表面之複數分隔 牆’該複數分隔牆限定複數收容空間； • [0021] (4〇〇a)填充墨水至該複數收容空間内；及 [0022] (500a)固化墨水以於複數收容空間内形成複數薄膜層 [0023] 步驟（l〇〇a)所採用之曝光光罩係選自本發明第二實施 k供之曝光光罩2 0 0 ’其中，該第一區域2 〇 2 2限定一薄膜 圖案，及該光阻材料層為負型光阻材料層《該曝光機光 源是一紫外光曝光機光源◊本實施例中，基板之材料選 自玻螭。當然’基板之材料也可選自石英玻璃、矽晶圓 、金屬板或塑料板等。 [0024]由於在步驟（100a)中，使用了負型光阻材料，故在步 驟（30〇a)中，光阻材料層中未被曝光之部分被去除而 形成複數收容空間，該複數收容空間之分佈與第一區域 2022提供之薄膜圖案相對應。請一併參閱圖5及圖9，由 於各光罩單元202之第二區域2024具有突出區域2026， 根據第二實施例提供之曝光光罩200，該第二區域2024可 透過用於曝光之光線，因此，第二區域2024對應之光阻 096107458 表單編號A0101 第7頁/共19頁 1003295121-0 100年.08j 15日修正 .:¾ gf料被曝光，顯影過程中沒有被去除。當光阻材料於被 、曝光後，會形成與各光罩單元202之第一區域2022及.第二 區域2024— 一對應之一未曝光部6022及一曝光部6〇24。 該曝光部6024於顯影過程係被保留的，且該曝光部6024 具有向未曝光部6022内部突出之突出區域6026，該曝光 部6024之突出區域6026與第二區域2024之突出區域 2026--對應。 [〇251 當將被曝光後之光阻材料層放置顯影液中時，由於曝光 部6024之突出區域6026之存在，顯影液不易進入位於曝 光部6024之兩個突出區域6〇26之間之未曝光部6〇22之部 分。當除位於兩個突出區域6026之間之未曝光部6〇22之 部分之其它光阻材料已完成顯影過程而形成收容空間時 ，由於曝光部6024之突出區域6026之存在之原因，該位 於曝光部6024之兩個突出區域6026之間之未曝光部6〇22 之部分會形成自該收容空間内到外之方向傾斜之一斜坡 ，該斜坡之傾斜角度為一銳角0，（斜坡面與基板表面 之夾角），如圖11所示。而圍成該收容空間之分隔牆之 《 長邊（或短邊）沿垂直於該矩形之長邊（或短邊）之截 面為一梯形，如圖10所示，該梯形之一腰與基板之夾角 為一個銳角0，， ’且0，，約等於0，。 [0026]在步驟（400a)中，填充步驟係利用一喷墨裳置（圖未 示）將墨水填充至複數收容空間内而於收容空間内形成 墨水層。該喷墨裝置係熱泡式喷墨裝置或壓電式喷墨裝 置β該噴墨裝置包括複數喷墨孔，噴墨裝置之複數喷墨 孔與該基板作行列相對的運動，然後能夠一次喷墨形成 096107458 表單編號Α0101 第8頁/共19頁 1003295121-0 1360720 薄膜圖案層》 100年08启Ϊ5日修正_頁 [0027]在步驟（50〇a)中’收-容空間内之墨水層被一齿佾敫置 (圖未不）所固化，以形成位於透明基板上之複數薄膜 層"該固化装置一加熱裝置及/或一抽真空裝置、或一曝 光裝置固化墨水，該曝光裝置係一紫外線曝光裝置。由 於之前限定每個收容空間之分隔牆之兩個突出區域6〇26 之間之部分形成一斜坡，該斜坡之傾斜角度θ，約等於 θ’ ’ ’故接觸於兩個突出區域6026之間之部分之墨水 形狀與接觸於分隔牆之長邊與短邊之墨水形狀大致相同 ♦ ’固化後所形成之薄膜厚度均勻性提高。 [0028] 本實施例所提供之曝光光罩，藉由各光罩單元之第二區 域之-部分二邊被第一區域包圍，而使該第二區域之該 部分對應之緣材料於顯影過程得以被保留。本實施例 所提供之薄_案層製造料，心㈣絲罩之第二 區域違部分對應之光阻材料於顯影後被保留卞來，因此 在顯影後會於限定收容空間之分隔牆之相應部分形成 斜坡，使固化後的薄膜層之厚度均勻性提高。 [0029] 096107458 該溝膜圖案層製程可適用於彩色縣片之製造及有機發 光裝置之製造。於彩色瀘光片之製程中，複數分隔牆即 可作為黑矩陣結構，複數收容空間可用為紅綠藍三色顏 色層之製造’本方式提供之製造方式’即可形成厚度均 句14較1^之顏色層°而於有機發光裝置之製造中，可用 此製程①成有機發光裝置之導線層，發光層及電子電洞 傳輸層等之製造。惟所形成之薄膜圖案及所需之墨水會 有所不同。 表單編號Α0101 第9頁/共19頁 1003295121-0 ,1360720 100年08月15日梭正替換頁 [0030] 综上所述，本發明確已符合發明專利之要件，爰依法提 出專利申請。惟，以上所述者僅為本發明之較佳實施方 式，本發明之範圍並不以上述實施方式為限，舉凡熟習 本案技藝之人士援依本發明之精神所作之等效修飾或變 化，皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 [0031] 圖1爲先前技術中分隔牆與基板形成一夾角之一截面示意 圖。 [0032] 圖2爲先前技術中分隔牆與基板形成一夾角之另一截面示 意圖。 [0033] 圖3爲本發明第一實施例提供之一種曝光光罩之一平面示 意圖。 [0034] .圖4爲圖3虛線中戶斤示部分之放大示意圖。 [0035] 圖5本發明第二實施例提供之一種曝光光罩之一平面示意 圖。 [0036] 圖6為本發明第三實施例提供之一種曝光光罩之平面示意 圖0 [0037] 圖7為圖6虛線中所示部分之放大示意圖。 [0038] 圖8為本發明第四實施例提供之一種曝光光罩之光罩單元 之平面示意圖。 [0039] 圖9為被曝光後之光阻材料之曝光區域之分佈示意圖。 [0040] 圖10爲本發明中分隔牆與基板形成一夾角之一截面示意 圖。 096107458 表單編號 A0101 第 10 頁/共 19 頁 100329512卜0 13.60720 100年.08月i5日修正_頁 [0041] 圖11爲本發明中分隔牆與基板形成一夾角之另一截面示 意圖。 “ ： [0042] 【主要元件符號說明】 曝光光罩：100，200，300，400 [0043] 光罩單元：102，202，302，402 [0044] 第一區域：1 022，2022，3022，4022 [0045] 第二區域：1024，2024，3024，4024 • [0046] 突出區域：1026，2026，3026，6026，4026 [0047] 端角部：104，204，304，404 [0048] 未曝光部：6022 [0049] 曝光部：60 24 096107458 表單編號A0101 第11頁/共19頁 1003295121-0[0018] U〇〇a) an exposure mask is disposed between a substrate having a photoresist layer on a surface and an exposure machine source; [0019] (200a) exposing the photoresist layer; [0020] (300a) Forming a plurality of partition walls formed on the surface of the substrate by the developing method. The plurality of partition walls define a plurality of receiving spaces; • [0021] (4〇〇a) filling ink into the plurality of receiving spaces; and [0022] (500a) curing The ink is used to form a plurality of film layers in the plurality of receiving spaces. [0023] The exposure mask used in the step (1a) is selected from the second embodiment of the present invention, the exposure mask 200, wherein the first The region 2 〇 2 2 defines a thin film pattern, and the photoresist material layer is a negative photoresist material layer. The exposure machine light source is an ultraviolet light exposure machine light source. In the embodiment, the material of the substrate is selected from the group consisting of glass matte. Of course, the material of the substrate may also be selected from quartz glass, tantalum wafer, metal plate or plastic plate. [0024] Since the negative photoresist material is used in the step (100a), in the step (30〇a), the unexposed portion of the photoresist material layer is removed to form a plurality of receiving spaces, and the plurality of receiving spaces are formed. The distribution of the spaces corresponds to the film pattern provided by the first region 2022. Referring to FIG. 5 and FIG. 9 , since the second region 2024 of each reticle unit 202 has a protruding region 2026, according to the second embodiment, the exposure reticle 200 is provided, and the second region 2024 can transmit light for exposure. Therefore, the second region 2024 corresponds to the photoresist 096107458 Form No. A0101 Page 7 / Total 19 pages 1003295121-0 100 years. 08j 15th correction.: 3⁄4 gf material is exposed, not removed during development. When the photoresist material is exposed and exposed, an unexposed portion 6022 and an exposed portion 6〇24 corresponding to the first region 2022 and the second region 2024 of each mask unit 202 are formed. The exposure portion 6024 is retained during the development process, and the exposure portion 6024 has a protruding region 6026 protruding toward the inside of the unexposed portion 6022, and the protruding portion 6026 of the exposed portion 6024 corresponds to the protruding region 2026 of the second region 2024. . [〇251 When the exposed photoresist layer is placed in the developing solution, the developer does not easily enter between the two protruding regions 6〇26 of the exposed portion 6024 due to the presence of the protruding portion 6026 of the exposed portion 6024. Part of the exposure unit 6〇22. When the other photoresist material except the portion of the unexposed portion 6〇22 between the two protruding regions 6026 has completed the developing process to form the receiving space, the exposure is exposed due to the presence of the protruding portion 6026 of the exposed portion 6024. A portion of the unexposed portion 6〇22 between the two protruding regions 6026 of the portion 6024 forms a slope inclined from the inside to the outside of the receiving space, the slope of the slope being an acute angle of 0, (the slope surface and the substrate) The angle between the surfaces) is shown in Figure 11. And the "long side (or short side) of the partition wall surrounding the accommodating space has a trapezoidal shape along a long side (or short side) perpendicular to the rectangular shape, as shown in FIG. 10, the trapezoid one waist and the substrate The angle is an acute angle of 0,, 'and 0, which is approximately equal to 0. In the step (400a), the filling step forms an ink layer in the accommodating space by filling the ink into the plurality of accommodating spaces by an ink jetting (not shown). The ink jet device is a thermal bubble type ink jet device or a piezoelectric ink jet device β. The ink jet device includes a plurality of ink jet holes, and the plurality of ink jet holes of the ink jet device move relative to the substrate in a row and column, and then can be sprayed once. Ink formation 096107458 Form number Α0101 Page 8/Total 19 page 1003295121-0 1360720 Film pattern layer 100 years 08 start 5 days correction_page [0027] In the step (50〇a), the ink layer in the receiving-capacity space Cured by a tooth set (not shown) to form a plurality of film layers on a transparent substrate. The curing device is a heating device and/or a vacuuming device, or an exposure device curing ink. It is an ultraviolet exposure device. Since the portion between the two protruding regions 6〇26 of the partition wall defining each of the accommodating spaces previously forms a slope, the inclination angle θ of the slope is approximately equal to θ′′′ and thus contacts between the two protruding regions 6026. The shape of the ink is substantially the same as the shape of the ink contacting the long side and the short side of the partition wall. ♦ 'The uniformity of the thickness of the film formed after curing is improved. [0028] The exposure mask provided in this embodiment is surrounded by the first region by the two sides of the second region of each mask unit, so that the portion of the second region corresponds to the edge material during the development process. Can be retained. In the thin layer manufacturing material provided in this embodiment, the photoresist material corresponding to the second region of the core (four) silk mask is retained after being developed, so that the corresponding partition wall of the receiving space is formed after development. The slope is partially formed to increase the thickness uniformity of the cured film layer. [0029] 096107458 The groove film pattern layer process can be applied to the manufacture of color county films and the manufacture of organic light-emitting devices. In the process of color enamel film, the plural partition wall can be used as the black matrix structure, and the plural accommodating space can be used for the manufacture of the red, green and blue color layer, and the manufacturing method provided by the method can form the thickness uniform sentence 14 to 1. In the manufacture of the organic light-emitting device, the process can be used to manufacture a wire layer of an organic light-emitting device, a light-emitting layer, an electron hole transport layer, and the like. However, the film pattern formed and the ink required will vary. Form No. Α0101 Page 9 of 19 1003295121-0 , 1360720 On August 15th, 100th, the page is replaced. [0030] In summary, the present invention has indeed met the requirements of the invention patent, and the patent application is filed according to law. However, the above description is only the preferred embodiment of the present invention, and the scope of the present invention is not limited to the above-described embodiments, and those skilled in the art will be able to make equivalent modifications or changes in accordance with the spirit of the present invention. It should be covered by the following patent application. BRIEF DESCRIPTION OF THE DRAWINGS [0031] FIG. 1 is a schematic cross-sectional view showing an angle formed by a partition wall and a substrate in the prior art. 2 is another cross-sectional view of the prior art in which the partition wall forms an angle with the substrate. 3 is a plan view showing an exposure reticle according to a first embodiment of the present invention. [0034] FIG. 4 is an enlarged schematic view showing a portion of the dotted line in FIG. 5 is a plan view schematically showing an exposure mask according to a second embodiment of the present invention. 6 is a plan view of an exposure mask according to a third embodiment of the present invention. [0037] FIG. 7 is an enlarged schematic view of a portion shown in the broken line of FIG. 8 is a schematic plan view of a reticle unit of an exposure reticle according to a fourth embodiment of the present invention. 9 is a schematic view showing the distribution of exposed regions of the photoresist material after exposure. 10 is a schematic cross-sectional view showing an angle formed between a partition wall and a substrate in the present invention. 096107458 Form No. A0101 Page 10 of 19 100329512 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 " : [0042] [Explanation of main component symbols] Exposure reticle: 100, 200, 300, 400 [0043] Photomask unit: 102, 202, 302, 402 [0044] First area: 1 022, 2022, 3022, 4022 [0045] Second region: 1024, 2024, 3024, 4024 • [0046] Projection area: 1026, 2026, 3026, 6026, 4026 [0047] End corner: 104, 204, 304, 404 [0048] Unexposed Department: 6022 [0049] Exposure Department: 60 24 096107458 Form No. A0101 Page 11 / Total 19 Page 1003295121-0