1360245 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種雙閘極有機薄膜電晶體；特別是有 關於一種光感測用的雙閘極有機薄膜電晶體。 【先前技術】 感光性薄膜電晶體已使用於光感測元件的應用，例如 使用做為電荷耦合元^/CCD)或互補式金屬氧化半導體光 感測元件YCMOS sensor)的光接收元件。當光照射在該感光 ® 性薄膜電晶體時會改變它的電氣特性（electrical characteristics)，已知的石夕薄膜電晶體光感測器即利用此一 電晶體特性來偵測光訊號。前述矽薄膜電晶體光感測器在 光源照射下其矽薄膜通道層的位能障會降低，而誘發本體 效應，進而提高汲極電流，此一增加的汲極電流值即1用 於光訊號的儲存。然而該矽薄膜電晶體光感測器使用'^具 有可撓性的矽薄膜半導體層，其應用範圍有限。 美國專利第6,992,322號揭露一種用於光感測器的單 ^ 閘極感光性有機薄膜電晶體2結構，參第一圖所示，其包 括一金屬底閘極(G)14、一高分子絕緣層10、一感光性高 分子半導體層12及一對金屬汲極(D)/源極(S)電極16、18。 該高分子絕緣層10係形成於該金屬底閘極14上方，而該 感光性高分子半導體層12位於該高分子絕緣層10上方。 該對金屬汲極/源極電極16、18係形成於該感光性高分子 半導體層12上方，並且該對金屬汲極/源極電極16、18之 間的部份該感光性高分子半導體層12係供做一通道區 20。在入射光源6照射下而未施予作用電壓於金屬底閘極 (G)14時，該單閘極感光性有機薄膜電晶體2的通道區20 5 丄允0245 =電1 ’而使汲極-源極電流Ids升高， 於如予-閘極偏壓在該單閘極感光 為專冋 =高其没極-源極電流Ids。前述照光二 電路，即可使該單閘杨感光性 曰曰體2應用在域號的制上。 ’ W膜電 【發明内容】1360245 IX. Description of the Invention: [Technical Field] The present invention relates to a double gate organic thin film transistor; in particular, to a double gate organic thin film transistor for light sensing. [Prior Art] A photosensitive thin film transistor has been used for a light sensing element, for example, a light receiving element using a charge coupled device (?CCD) or a complementary metal oxide semiconductor light sensing element (YCMOS sensor). When the light is irradiated on the photosensitive thin film transistor, its electrical characteristics are changed. The known Shixi thin film transistor photosensor uses this transistor characteristic to detect the optical signal. In the foregoing bismuth thin film transistor photosensor, the potential energy barrier of the ruthenium film channel layer is reduced under the illumination of the light source, and the bulk effect is induced, thereby increasing the drain current, and the increased value of the drain current is 1 for the optical signal. Storage. However, the germanium thin film transistor photosensor uses a flexible germanium thin film semiconductor layer, and its application range is limited. U.S. Patent No. 6,992,322 discloses a single gate photosensitive organic thin film transistor 2 structure for a photosensor, as shown in the first figure, which includes a metal bottom gate (G) 14, a polymer insulation. The layer 10, a photosensitive polymer semiconductor layer 12, and a pair of metal drain (D)/source (S) electrodes 16, 18 are provided. The polymer insulating layer 10 is formed above the metal bottom gate 14, and the photosensitive polymer semiconductor layer 12 is positioned above the polymer insulating layer 10. The pair of metal drain/source electrodes 16 and 18 are formed over the photosensitive polymer semiconductor layer 12, and a portion of the photosensitive polymer semiconductor layer between the pair of metal drain/source electrodes 16 and 18 The 12 series is used as a passage zone 20. When the incident light source 6 is irradiated and the applied voltage is not applied to the metal bottom gate (G) 14, the channel region 20 5 of the single gate photosensitive organic thin film transistor 2 is allowed to pass through 0245 = electricity 1 ' - The source current Ids rises, as in the pre-gate bias at the single gate sensitization = high its non-polar-source current Ids. The above-mentioned illuminating two circuit can apply the single thyristor photosensitive body 2 to the system of the domain number. 'W film electricity 【Invention content】
本發明提供一種光感測用$閘極有機薄膜雷曰 構於應用至具可撓性的影像感剩元件或顯示：件： 種域測用朗財機薄膜電晶體 。冓係匕括一基底、一底部閘極電極、一第一介電層、 —對源極/汲極電極、一感光性有機半導體層、一第二& =及-頂侧極電極。該底部閘極電極係形成於該^上 万，該第一介電層係形成於該底部閘.極電極上方，而該 ，極/汲極電極係形成於該第—介電層上方，該對源極^及 玉電極係分別與該底部閘極電極兩側部份重疊，並且該對 源極/;及極電極之間定義—通道區對應該底部閘極電極。該 感光性有機半導n層係形成於該通道區並且分別覆蓋部份 該對源極/汲極電極。該第二介電層係形成於該對源極/汲 極電極及該感光性有機半導體層上方，及該頂部閘極電極 係對應該通道區而形成於該第二介電層上方。 【實施方式】 本發明提供一種光感測用雙閘極有機薄膜電晶體結 構，其係利用在特定的底部閘極電壓操作區間該雙閘極有 機薄膜電晶體於照光前後沒極電流比值可達1000倍以上 的特性，而應用於光訊號的儲存或提供驅動電壓予顯示元 6 1360245 件，進而可簡化影像感測元件或顯示元 換句話說，本發明係利用該感光性錐門^電路設計。 晶體於照光前後其沒極電流(Id)相對間=:機薄膜電 改變此-電晶體特性，以將該感光性曲線 者將其照光後產生的光電流訊號轉=成：J光訊號’或 作電壓，以節省_^^狀電能。冑如元件之操 本發明提供-種光感測用雙閉極有機薄 具體實施例，其截面結構示意圖如第二圖；體:： 一具體實施例中，該光感測用雙閘極有 ^/、在此 οπι + 又闸独有機溥膜電晶體200 =括基底20卜一底部閘極電極2〇2、—第_介電層 二及=2〇4&、_、-感光性有機半； ^ 2〇1 -T 3 一厂θ 206及一頂部閘極電極207。該基 SI丄可撓性的基板，而該底部_電極202係 邱Ϊ =基底2〇1上方。該第一介電層203係形成於該底 «碣極電極202上方，該對源極/汲極電極2〇4a、2〇仆係 形成於該第一介電層203上方，該對源極/汲極電極2〇乜、 204b係分別與該底部閘極電極202兩側部份重疊，並且該 對源極/汲極電極204a、204b之間定義一通道^對應該^ 部閘極電極202。該感光性有機半導體層2〇5係形成於該 通道區並且分別覆蓋部份該對源極/;及極電極204a、204b。 該弟一介電層206係形成於該對源極/汲極電極204a、204b 及該感光性有機半導體層205上方。該頂部閘極電極207 係對應該通道區而形成於該第二介電層206上方。 在此一具體實施例中，該基底201、底部閘極電極 202、頂部閘極電極207及該對源極/汲極電極204a、204b 可具有透光性，以使光源可以從該基底201、底部閘極電 7 1360245 極202、頂部閘極電極207或該對源極/汲極電極2〇如、 204b等任一電極的方向入射進入該感光性有機半導體声 205特別是该基底2〇 1可以是一具有透光性可撓性基板， 而可應用在可撓性光感測元件的製作，以利於攜帶。^亥 部閘極電極202、頂部閘極電極207及該對源極/汲極g極 20=、2〇4b係可由透明氧化金屬材質形成，例如_雜 之氧化鋅（IZO)、氧化銦錫（IT0)、氧化鋅（Zn〇)、氧化銦 (jihO3)、氧化錫（Sn〇2)、鋁摻雜之氧化鋅(AZ〇)或鎵摻雜之 φ f化鋅(GZ0)。該底部閘極電極202、頂部閘極電極^〇7及 该對源極/汲極電極204a、204b之厚度可為微米（ m)至1微米（/zm)。該感光性有機半導體層2〇5之厚度係為 〇.〇3微米km)至〇.2微米（//m)e該感光性有機半^體層 205 可包含 Pentacene、P3HT(p〇ly 3_ 以叮胞叩h_、曰 PQT12(poly(3, 3-dialkyl quarter- thiophene)或 F8T2(poly(9,9-dioctylfluorene-co- bithiophene))。該第—介 電層及該第二介電層可為高分子絕緣材料，其厚度可為 微米〇m)至1微米（私叫。 · # 第二圖係本發明前述之光感測用雙閘極有機薄膜電晶 體200的汲極電流(Id)相對該底部閘極電極2〇2操作電壓 對應不同的頂部閘極電極2〇7操作電壓的特性曲線圖；其 中特性曲線a係對應該頂部閘極電極2〇7為揍地，特性^ 線b對應該頂部閘極電極2〇7為4〇伏特，特性曲線c對應 該頂部閘極電極207為20伏特，特性曲線d對應該頂^ 閘極電極207為_40伏特及特性曲線e對應該頂部間極電 極207為:2〇伏特。以該特性曲線a為例，當該底部閉極 電極202 =作電壓從零伏特改變至_5伏特時，淡極電流⑹ 係陡然升问1000倍以上。本發明的感光性雙閘極有機薄 8 1360245 體在特定的底部間極操作 切換電晶體的關/開狀態，使其没極 f作用下可 此—電晶體特性，而以未照射光源吊低陡然升高 雙間極有機_電《綠倾f該感光性 間極電極’以控制該電晶體呈開或關狀^⑨愿予該底 ，四圖係本發明前述光感測用雙‘、有機薄 ⑻的汲極電流(iD)相對該底部閘極電極2 番日曰體 J前，性曲線圖，係對應頂部閉極電極== :從第四圖中可明顯看出，當底=電頂 可提高麵倍以上。本發明該光感2 = J機=電晶體200即利用此一照光前後電晶體特性的改 ^貞測並收集光訊號，而可做為光感測元件的一光接 本發明該光感測用雙閘極有機薄膜電晶體在 j 的光電流亦可藉由該源極電極2G4a電性搞接 電谷器的電極板，將光電荷儲存於該電容器的電極 板’而將該光電流轉換成—電壓，可用以驅動單位像素内 7冰顆粒或液晶分子。換句話說，本發明該光感測用雙 閘極有機薄膜電晶體綱可用以驅動顯示元件，而簡化該 顯，元件的邏輯電路，並且使該顯示元件達到省電的效 果。再者，本發明該光感測用雙閘極有機薄膜電晶體200 可使用可撓性基板’而可應用至可撓性顯示元件。 —以上所述僅為本發明之具體實施例而已，並彝用以限 定本發明之_料利範圍；凡其絲脫縣發明所揭示之 精神下所完成之等效改變或修飾，均應包含在下述之申請 專利範圍内。 9 1360245 【圓式簡單說明】 第一圖係一已知的單閘極感光性有機薄膜電晶體的 截面結構示意圖； 第二圖係本發明光感測用雙閘極有機薄膜電晶體的 一具體實施例的截面結構示意圖； 第三圖係本發明光感測用雙閘極有機薄膜電晶體的 汲極電流(iD)相對其底部閘極電極操作電壓的各種特性曲 線圖，及 第四圖係本發明光感測用雙閘極有機薄膜電晶體的 汲極電流(ID)相對其底部閘極電極操作電壓於照光前後的 特性曲線圖。 【主要元件符號對照說明】 2----單閘極感光性有機薄膜電晶體 6-…入射光源 10----高分子絕緣層 12----感光性高分子半導體層 14----金屬底閘極 16、18-…金屬汲極/源極電極 20----通道區 200-…光感測用雙閘極有機薄膜電晶體 201 ----基底 202 ----底部間極電極 203-…第一介電層 204a., 204b—源極/>及極電極 205- …感光性有機半導體層 207----頂部間極電極 206- …第二介電層The invention provides a light-sensing $thrain organic film thunder structure for application to a flexible image sensing residual component or display: a seed field measuring Langcai film transistor. The lanthanum includes a substrate, a bottom gate electrode, a first dielectric layer, a source/drain electrode, a photosensitive organic semiconductor layer, a second & = and a top side electrode. The bottom gate electrode is formed on the bottom electrode, and the first dielectric layer is formed on the bottom gate electrode, and the pole/drain electrode is formed on the first dielectric layer. The source electrode and the jade electrode system respectively overlap the two sides of the bottom gate electrode, and the pair of source/; and the electrode electrode define a channel region corresponding to the bottom gate electrode. The photosensitive organic semiconductor n-layer is formed in the channel region and covers a portion of the pair of source/drain electrodes, respectively. The second dielectric layer is formed over the pair of source/drain electrodes and the photosensitive organic semiconductor layer, and the top gate electrode is formed above the second dielectric layer corresponding to the channel region. [Embodiment] The present invention provides a double gate organic thin film transistor structure for light sensing, which utilizes a double gate organic thin film transistor in a specific bottom gate voltage operating interval before and after illumination. 1000 times or more of the characteristics, and is applied to the storage of optical signals or providing a driving voltage to the display unit 6 1360245, thereby simplifying the image sensing element or display element. In other words, the present invention utilizes the photosensitive cone gate circuit design. . The crystal has its infinite current (Id) relative to each other before and after illumination: the machine film electrically changes the characteristics of the transistor to convert the photocurrent signal generated by the photosensitive curve to the following: J light signal 'or Make voltage to save _^^ electric energy. For example, the present invention provides a dual-closed organic thin thin embodiment for light sensing, and its cross-sectional structure is as shown in the second figure. Body: In a specific embodiment, the light sensing double gate has ^/, οπι + 闸 溥 溥 溥 溥 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 Half; ^ 2〇1 - T 3 a factory θ 206 and a top gate electrode 207. The base is a flexible substrate, and the bottom electrode 202 is above the substrate 2〇1. The first dielectric layer 203 is formed over the bottom drain electrode 202, and the pair of source/drain electrodes 2〇4a, 2〇 are formed over the first dielectric layer 203, the pair of sources /Terminal electrodes 2A, 204b are respectively overlapped with both sides of the bottom gate electrode 202, and a channel is defined between the pair of source/drain electrodes 204a, 204b corresponding to the gate electrode 202 . The photosensitive organic semiconductor layer 2 is formed in the channel region and covers a portion of the pair of source/; and electrode electrodes 204a, 204b, respectively. The dielectric layer 206 is formed over the pair of source/drain electrodes 204a and 204b and the photosensitive organic semiconductor layer 205. The top gate electrode 207 is formed above the second dielectric layer 206 opposite the channel region. In this embodiment, the substrate 201, the bottom gate electrode 202, the top gate electrode 207, and the pair of source/drain electrodes 204a, 204b may be transmissive so that the light source can be from the substrate 201, The bottom gate electrode 7 1360245 pole 202, the top gate electrode 207 or the pair of source/drain electrodes 2, such as 204b, are incident into the photosensitive organic semiconductor sound 205, in particular the substrate 2〇1 It can be a translucent flexible substrate, and can be applied to the fabrication of flexible light sensing elements to facilitate carrying. The galvanic gate electrode 202, the top gate electrode 207, and the pair of source/drain electrodes g=20=, 2〇4b may be formed of a transparent oxidized metal material, such as zinc oxide (IZO) or indium tin oxide. (IT0), zinc oxide (Zn〇), indium oxide (jihO3), tin oxide (Sn〇2), aluminum-doped zinc oxide (AZ〇) or gallium-doped φf-zinc (GZ0). The bottom gate electrode 202, the top gate electrode 〇7, and the pair of source/drain electrodes 204a, 204b may have a thickness of from micrometers (m) to 1 micrometer (/zm). The photosensitive organic semiconductor layer 2〇5 has a thickness of 〇.〇3 μm km) to 微米.2 μm (//m)e. The photosensitive organic semiconductor layer 205 may include Pentacene and P3HT (p〇ly 3_ The cell layer is h_, PQT12 (poly(3, 3-dialkyl quarter- thiophene) or F8T2 (poly(9,9-dioctylfluorene-co-bithiophene)). The first dielectric layer and the second dielectric layer are The polymer insulating material may have a thickness of from micrometers 〇m) to 1 micrometer (private call. · #第二图 is the threshold current (Id) of the double gate organic thin film transistor 200 for light sensing according to the present invention. The characteristic curve corresponding to the operating voltage of the top gate electrode 2〇7 corresponding to the bottom gate electrode 2〇2; wherein the characteristic curve a corresponds to the top gate electrode 2〇7 being a ground, the characteristic ^ line b Corresponding to the top gate electrode 2〇7 is 4 volts, the characteristic curve c corresponds to the top gate electrode 207 is 20 volts, the characteristic curve d corresponds to the top gate electrode 207 is _40 volts and the characteristic curve e corresponds to the top The interpole electrode 207 is: 2 volts. Taking the characteristic curve a as an example, when the bottom closed electrode 202 = voltage is changed from zero volts At _5 volts, the pale-polar current (6) is abruptly increased by more than 1000 times. The photosensitive double-gate organic thin 8 1360245 body of the present invention switches the on/off state of the transistor in a specific bottom-pole operation, so that it does not Under the action of the pole f, the characteristics of the transistor can be increased by the unilluminated light source, and the double-electrode is electrically raised. The green-positive electrode is controlled to control the transistor to be turned on or off. I would like to give the bottom, the four figures are the front view of the double-thickness, organic thin (8) blander current (iD) of the present invention relative to the bottom gate electrode 2, and the corresponding top view. Electrode electrode == : It can be clearly seen from the fourth figure that when the bottom = electric top can increase the surface magnification, the light perception 2 = J machine = the crystal 200 is the change of the characteristics of the transistor before and after the use of the illumination.贞 并 并 收集 收集 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞 贞Engage the electrode plate of the electric grid, store the photocharge on the electrode plate of the capacitor and convert the photocurrent The voltage-voltage can be used to drive 7 ice particles or liquid crystal molecules in a unit pixel. In other words, the double gate organic thin film transistor of the light sensing device of the present invention can be used to drive display elements, thereby simplifying the display and logic of the elements. The circuit and the display element achieve the effect of power saving. Further, the double gate organic thin film transistor 200 for light sensing of the present invention can be applied to a flexible display element using a flexible substrate'. The description is only for the specific embodiments of the present invention, and is used to define the scope of the present invention. The equivalent changes or modifications performed in the spirit of the invention disclosed in the invention of the present invention should be included in the following. Within the scope of the patent application. 9 1360245 [Circular Simple Description] The first figure is a schematic cross-sectional structure of a known single-gate photosensitive organic thin film transistor; the second figure is a specific example of the double-gate organic thin film transistor for light sensing of the present invention. A schematic cross-sectional view of the embodiment; the third figure is a graph showing various characteristic curves of the drain current (iD) of the double-gate organic thin film transistor for photo sensing according to the operating voltage of the bottom gate electrode of the present invention, and the fourth graph The characteristic curve of the gate current (ID) of the double-gate organic thin film transistor for photosensing of the present invention relative to the operating voltage of the bottom gate electrode before and after illumination. [Main component symbol comparison description] 2----Single gate photosensitive organic thin film transistor 6-...input light source 10-----polymer insulating layer 12----photosensitive polymer semiconductor layer 14--- - Metal bottom gate 16, 18-... Metal drain/source electrode 20----Channel region 200-... Double gate organic thin film transistor for light sensing 201 - Substrate 202 ---- Bottom Interelectrode electrode 203-...first dielectric layer 204a., 204b-source/> and electrode 205--photosensitive organic semiconductor layer 207----top electrode 206-...second dielectric layer