1358757 w v九、發明說明： 脚40』4- 年月B修正替換頁 ⑽年10月24曰修正替換頁 【發明所屬之技術領域】 本發明普遍地與離子植入系統相關，並且更特別地與 在離子植入系.统中用力選擇性預冑射抽取離子束之改進方 法及裝置相關。 【先前技術】 每半導體元件的製造過程中，離子植入用來用將半導 體晶圓以雜質摻入。離子植入器或是離子植入系統以離子 束處理半導體晶圓，在積體電路的製造期間產生η或是 型摻雜區域或是在晶圓上形成鈍化層。當用於半導體播雜 時，離子植入系統注入選定的離子種類以產生期望的外來 物質。從來源物質例如錄、坤或是鱗產生植人離子造成n_ 型外來物質晶圓，而如果期望產生卜型外來物質晶圓，可 以植入以來源物質例如硼、鎵或是銦產生的離子。 圖1說明傳統的低能量離子植入系統1〇，其具有終端 U、離子束線總成14以及末端站16。終端12包括一個以 高壓電源22提供動力的離子源2〇,其產生並導引離子束 24到離子束線總成14。離子束線總成丨4由離子束導管32 和質量分析器26組成，在其中建立偶極磁場以使具有適當 電荷質量比的離子通過到達末端站16内的晶圓3〇上。離 子源20產生從來源20中抽取的帶正電離子，然後形成離 子束24，離子束在離子束線總成μ中沿著— 束路徑導引到末端站16。離子植入系…== 5 1358757‘ 100年10月24曰修正替換頁 子源20及末端站1 6之間 L~_______ 其維持離子…且限制: = = =，結構’ 仕個拉長的内部空腔或是通谨 中’經由離子束線24在内部運送到由末端站丨=道 Zb的晶圓或是工件3。上。通常抽空離子束運送t 1可與空氣分子相撞而偏斜離開預定離子束線路徑 離子的電荷質量比影響其因電場或是磁場產 及側向加速程度。質量分拚 ° 子束線總成u中，並且:：位於離子…^ 通道中穿過離子束線路：:偶一 Γ量分析磁鐵，其產生在 偏斜離子束24裡的各種Γ子Γ場。操作這個偶極場以 束線通道之扭形部t乃經由磁場偏斜通過離子 子。、琴禮地、 刀有效地分開不同電荷質量比的離 k…刀開期望和非期望質量(例 過程稱為質量分供。描田陆θ 电π負里比）離子的 離子可以非〜分析技術在晶圓30上給出的 # ί-i , ’刀子或疋原子量的離子將偏 子束線路徑的位置，因此可以避免非期望物質 落人離子植入器)基於不同的能量範圍通常 電子伏：=低能量植入器典型地設計為提供幾千 :二 =)到大約80，kev的離子束在其 更多的晶圓。分析器提供到末端站以植入一或 末端站16夕b里 益通常利用在質量分析器26和 間的線性加速（丨丨 析的離子束24力、^ )裝置（未顯不），將質量分 口逮到典型地幾百keV的高能量。高能離 6 1358757 參 tho ι〇· ^ ^ --- -、 月日修正替換頁丨 年則24日修正替換頁 子植入通常應用在半導體晶圓30之更深反―地τ一― 高電流、低能量之離子束24典型地應用在高劑量、淺深 度的離子植入，在這種情況下低能量的離子通常有維持離 子束24收斂的困難。 高能量以及低能量植入器的質量分析 π王吧&又§τ 用於一個範圍的不同質量和種類之離子束24。例如傳統上 適用於低能量應用的質量分析器26可以提供幾kev硼（Βη) 離子束的質量分離，以及大約80kev的砷（As)離子束的質量 分離。在這種情況下，因為產生高質量分析器偶極磁場以 適應8〇keV砷離子束之能力上的限制，質量分析器磁鐵彎 曲半徑典型地在3G厘米左右’而要設計更小的彎曲半徑將 需要不實際的更高質量分析器磁場。當為較低能量離子束 ,J 士 :ke V B 11 #作質量分析時，調整相同的質量分析器磁 鐵以提供更低振幅的偶極場。 貝里刀析斋26操作如一個具有相應焦距的點對點 質量分析器26沿著第一路徑或是轴、在離開質量： 析盗入口的一彻柱中^ 個特疋距離接收入射離子束24,並且沿 質量分析的輸出離…，第二軸具有 此放置一個解析孔隙广距離的變換點或是「腰」，在 . 3 ^ Ui Μ以允許期望質量的離子通過，並且 阻擋或疋攔截非期望 亚1 納寬的雜工Λ 、里的離子。因此，在具有設計為容 ，·内•的綠子束能量範曰 高和低能量的離子束以 刀析器Μ的植入器Η中， 分析器26之門的1必須穿越介於離子源2〇以及質量 間的額外距離，以及在質量分析器26和 7 ,· _ 100年10月24日修正替換頁 Y之間因質量分析器大的變曲半徑所要求的距離，有 、为別稱為入口以及出口漂移距離。 荷+子+束特別是咼電流離子束通常包含高密度之類似電 Z正電）離子，其因為相‘互排斥（空間電荷效應，此有時稱 或a子束爆發）傾向於造成離子束24發散離開離子束路徑 2轴冑子束爆發在高電流、低能量應用中特別麻煩， =在離子束中高離子密度（高電流）離子的相互排斥力更 :惡化’而低傳輸速度（低能量）的離子將他們暴露在相互排 由力：？時間比在高能應用時更長。而且如上面討論的， 旦於質量分析器26設計用於提供寬能量範圍的操作，低能 里離子束24在質量分析前後比較長的漂移距離中受到空間 電荷效應。 另外1間電荷效應在入口漂移距離内、在抽取的離 子束進：質量分析器26之前更是顯著，其可能長達30_50 米k疋因為起始的抽取離子束24包含期望質量以及非 期望質里的離子。在低能量Bn離子束的狀況下，例如離 子源20從BF3來源氣體產生電漿，從其中抽取離子束。抽 取離子束24包括期望的的Bn離子，以及其他非期望的組 成例如ll (F)、BFi和BF2。在這個範例裡，B i i含量典型地 只有在起始抽取離子束24裡總離子的大約4分之/。、質量 分析器26與解析孔隙34共同限制非期望成分的傳送，、而 提供到晶圓30的質量分析離子束24基本上由Bu離子組 成，這些離子實質上不令 有取初從來源20中抽取離子束24 的非期望成分。 13587571358757 wv IX, invention description: foot 40′′ 4-year month B correction replacement page (10) October 24 曰 correction replacement page [Technical field of invention] The present invention is generally associated with ion implantation systems, and more particularly with It is related to an improved method and apparatus for selectively extracting and extracting an ion beam in an ion implantation system. [Prior Art] In the manufacturing process of a semiconductor element, ion implantation is used to incorporate a semiconductor wafer with impurities. The ion implanter or ion implantation system processes the semiconductor wafer with an ion beam, produces an n-type doped region during fabrication of the integrated circuit, or forms a passivation layer on the wafer. When used for semiconductor doping, the ion implantation system injects selected ion species to produce the desired foreign matter. The generation of implanted ions from source materials such as kan, kun or scale causes n_type foreign matter wafers, and if it is desired to produce wafers of foreign matter, ions generated from source materials such as boron, gallium or indium may be implanted. 1 illustrates a conventional low energy ion implantation system 1U having a terminal U, an ion beam line assembly 14, and an end station 16. Terminal 12 includes an ion source 2A powered by a high voltage power source 22 that generates and directs ion beam 24 to ion beam assembly 14. The ion beam assembly 丨4 is comprised of an ion beam conduit 32 and a mass analyzer 26 in which a dipole magnetic field is established to pass ions having an appropriate charge-to-mass ratio to the wafer 3 within the end station 16. The ion source 20 produces positively charged ions extracted from source 20 and then forms an ion beam 24 that is directed along the beam path to the end station 16 in the ion beam line assembly μ. Ion Implantation...== 5 1358757' October 24, 2014 Correction Replacement Page Source 20 and End Station 1 6 between L~_______ It maintains ions... and limits: = = =, structure's elongated The internal cavity is either internally transported via ion beam 24 to the wafer or workpiece 3 from the end station 丨 = lane Zb. on. Typically, the evacuated ion beam transport t1 can collide with the air molecules and deflect away from the predetermined ion beam path. The charge mass ratio of the ions affects the degree of lateral or lateral acceleration due to electric or magnetic fields. The mass is divided into the sub-beam line assembly u, and:: is located in the ion...^ channel through the ion beam line:: an even amount of analysis magnet, which produces various dice in the deflected ion beam 24 . The dipole field is operated such that the twisted portion t of the beam path is deflected by the magnetic field through the ion. , Qin Lidi, Knife effectively separate the different charge-to-mass ratios from the k...the open and the undesired masses (the process is called the mass fractionation. The Tian Lu θ electric π negative ratio) ions can be non-analytical The technique given on wafer 30 is # ί-i , 'knife or 疋 atomic weight of ions will align the position of the beam beam path, thus avoiding undesired material falling into the ion implanter.) Based on different energy ranges usually electrons Volt: = low energy implanters are typically designed to provide several thousand: two =) to about 80, kev ion beams in their more wafers. The analyzer is provided to the end station to implant one or the end station. The benefit is usually utilized by the mass analyzer 26 and the linear acceleration (deuterated ion beam 24 force, ^) device (not shown), The mass fraction captures a high energy typically of a few hundred keV. High energy away from 6 1358757 ththo ι〇· ^ ^ --- -, the date of the revised replacement page, the second day of the 24th correction replacement page sub-implant is usually applied to the semiconductor wafer 30 deeper anti-ground τ a high current, Low energy ion beam 24 is typically applied to high dose, shallow depth ion implantation, in which case low energy ions typically have difficulty maintaining ion beam 24 convergence. Mass Analysis of High Energy and Low Energy Implants π王吧& §τ is used for a range of ion beams 24 of different masses and types. For example, mass analyzer 26, which is conventionally suitable for low energy applications, can provide mass separation of several kev boron (?n) ion beams and mass separation of about 80 kev arsenic (As) ion beams. In this case, because of the limitation of the ability to generate a high-quality analyzer dipole magnetic field to accommodate an 8〇keV arsenic ion beam, the bend radius of the mass analyzer magnet is typically around 3G cm, and a smaller bend radius is to be designed. A higher quality analyzer magnetic field that is not practical will be required. When using a lower energy ion beam, J: ke V B 11 # for mass analysis, adjust the same mass analyzer magnet to provide a lower amplitude dipole field. The Berry knife 26 operation, such as a point-to-point mass analyzer 26 having a corresponding focal length, receives the incident ion beam 24 along a first path or axis, at a distance from the mass of the exit: And along the output of the mass analysis, the second axis has this transformation point or "waist" that places a large distance of the analytical aperture, at .3 ^ Ui Μ to allow ions of the desired mass to pass, and block or 疋 intercept undesired Sub-1 nano-width of the handyman Λ, the ions inside. Therefore, in an implanter having an ion beam designed to contain a high energy and a low energy, the gate of the analyzer 26 must pass through the ion source. 2〇 and the extra distance between the masses, and the distance required between the mass analyzers 26 and 7 , · _ October 24, revised correction page Y due to the large radius of curvature of the mass analyzer, Drift distance for inlet and outlet. The charge + sub + beam, especially the erbium current ion beam usually contains a high density of similar electric Z positive charge), which tends to cause ion beam because of the phase 'mutual repulsion (space charge effect, sometimes called or a beam burst) 24 divergence away from the ion beam path 2-axis scorpion beam burst is particularly troublesome in high current, low energy applications. = High ion density (high current) ions in the ion beam have mutually repulsive forces: worsening' and lower transmission speed (low energy) The ions expose them to each other by force:? Time is longer than in high energy applications. Moreover, as discussed above, the low energy ion beam 24 is subject to a space charge effect over a relatively long drift distance before and after mass analysis, as the mass analyzer 26 is designed to provide operation over a wide range of energies. The other charge effect is more significant within the inlet drift distance before the extracted ion beam: mass analyzer 26, which may be as long as 30_50 mk because the starting extracted ion beam 24 contains the desired mass as well as the undesired mass The ions in it. In the case of a low energy Bn ion beam, e.g., ion source 20 produces a plasma from a BF3 source gas from which an ion beam is extracted. The extracted ion beam 24 includes the desired Bn ions, as well as other undesirable components such as ll (F), BFi, and BF2. In this example, the Bi i content is typically only about 4 percent of the total ions in the initial extracted ion beam 24 . The mass analyzer 26 and the analytical aperture 34 together limit the transfer of undesired components, while the mass analysis ion beam 24 provided to the wafer 30 consists essentially of Bu ions, which are essentially not derived from the source 20 Undesired components of ion beam 24 are extracted. 1358757
不過’因為離子束成分最初的混合，在來源2〇附近的 抽取離子束流大約是期望（分析後）離子束流的4倍，期望離 束目心疋在末端站進行植入。因為抽取的離子束電流 比刀析後電流大很多，抽取離子束24受到進入質量分析器 6.之刖的4倍空間電荷（例如相互排斥）。因此，有需要改 進離子植入裝置和技術以降低空間電荷中和對植入器的不 利效應，以支援一個範圍的離子束能量和種類。 【發明内容】 、下‘“，員示本發明的簡化概要以提供一些本發明觀點的 基本了解。本概要不是本發明的廣泛概觀，也不打算指定 本I明的主要或是關鍵元件或是描繪本發明的範圍◊概要 目的是要以簡化的型式呈現本發明的一些觀點，作為下 面提出之更詳細描述的前言。 本發明係與離子植入系統及方法有關，其中散射系統 或是預散射器在離子束線總成人口的離子源附近提供，以 從離子源選擇性傳送抽取的離子束到質量分析器，或是預 散射抽取的離子束以形成散射的離子束，此離子束具有較 少的非期望質量成分然後要被導引到質量分析器。本發明 的散射裝置和方法可以用於任何型態的離子植入系統:包 括具有後質量分析加速組件的高能植人器和低能植入器。 ^發明的各種觀點可以使用以在傳送低能量離子束 ^電荷效應，該低能量離子束從離子源到—個設計用於 大乾圍離子束能量之—般目的的質量分析器，&乃經由從However, because of the initial mixing of the ion beam components, the extracted ion beam current near the source 2〇 is approximately four times that of the desired (analytical) ion beam, and it is desirable to leave the eye center at the end station for implantation. Since the extracted ion beam current is much larger than the knife-cut current, the extracted ion beam 24 is subjected to a 4 times space charge (e.g., mutual exclusion) into the mass analyzer 6. Therefore, there is a need to improve ion implantation devices and techniques to reduce the effects of space charge neutralization on implanters to support a range of ion beam energies and species. BRIEF DESCRIPTION OF THE DRAWINGS [0007] The following is a simplified summary of the present invention to provide a basic understanding of the invention. This summary is not an extensive overview of the invention and is not intended to The scope of the present invention is intended to be a summary of the present invention in a simplified form, which is set forth in the <Desc/Clms Page number>> Provided near the ion source of the population of the ion beam assembly to selectively transport the extracted ion beam from the ion source to the mass analyzer, or to pre-scatter the extracted ion beam to form a scattered ion beam having a relatively large The less undesired mass components are then directed to the mass analyzer. The scattering apparatus and method of the present invention can be used in any type of ion implantation system: including high energy implanters and low energy implants with post mass analysis acceleration components. The various aspects of the invention can be used to transmit a low energy ion beam charge effect from the ion source - a big designed around the ion beam energy - like object mass analyzer, & is the via from
日修正替換頁 100年10月24日修正替換頁 抽取咸子束選擇性移除非 --_____ 所曰 /望質里的離子，因此降低主要 貝置分析器之前的離子束疮士 .,屯机，同時允許直接提供高能離 子束到主要質量分析器而沒有預散射。 在本發明的一個觀點中，提供一種離子植入系統，包 •個料源以產生抽取的離子束—個位於離子源附 近的散射系統以接收抽取的離子束，一個從散射系統接收 抽取離子束或是散射離子束的質量分析器，以及一個位於 質量分析器下游的末端站。散射系統選擇性地從離子源傳 达抽取的離子束到質量分析器，或是導引散射的離子束到 質量分析器，散射的, 子束具有比抽取的離子束更少非期 望質量範圍的離子。因為散射系統只在低能量抽取的離子 束使用’其可以在一段非常短的距離裡進行散射如此限 制起因於整個抽取離子束之空間電荷擴大的效應。在下面 ，述並且說明的模範實施例裡，散射系統包括多個磁鐵以 提供接近離子束線總成入口的偶極磁場，而選擇性導引抽 取的離子束到一個解析結構，其攔截非期望質量的離子並 且讓期望質量的離子通過到主要質量分析器。散射系統磁 鐵在一範例内構型為導引抽取的離子束通過一個包含解 析結構的雙重曲道（double d〇g_leg)路徑，並且重新導引散 射的離子束沿著起始抽取離子束路徑到主要質量分析器。 在另一實施中，散射系統選擇性地沿著單一曲道路徑重新 導引抽取的離子束做散射，而散射的離子束沿著第二路徑 被提供到主要質量分析器。 本發明的另一個觀點提供一個離子束線總成以從一個 10 1358757 介·Ίϋ·2 4-- p月日修正替換頁 l —_ — . ^ n ^ y^SL· 離子源把離子傳送到在離子植 L---__________ ^ , 系統的—個末端站。離子 束線釔成包括：一個散射系 ^ α 從離子源接收抽取的離 :個質量分析器從散射系統接收抽取的離子束 ::散射的離子束，並且導引期望質量範圍的離子到—個 末端站。散射系統選擇性地從離 代雕于源傳迗抽取的離子 貝S分析器中或是導引散射離子 ·?·击彻u Α灿 术勻質里分析态，散射離 :束與抽取離子束相比較具有有更少非期望質量範圍的離 子0 本發明的另一個觀點提供一個在離子植入系統裡產生 質量分析離子束的方法。方法包括：提供具有期望質量範 圍和非期望質量範圍離子的抽取離子束，並且選擇性地傳 送抽取的離子束到質量分析器或是從抽取的離子東導出散 射的離子I，並且提供散射的離子束到質量分析g，而散 射離子束具有比㈣離子束更少非期冑質量範圍的離子。 方法更進一步包括：用質量分析器從散射的離子束或是從 柚取的離子束除去至少一些非期望質量範圍的離子，以產 生質量分析離子束。 下列描述和合併的附圖詳細闡述本發明實施例的特定 s兒明性觀點。其係指出可以使用本發明原理的—些不同的 方法。 【實施方式】 本發明現在將參考附圖來描述，其中相似參考數字用 來指出相似元件，並且在其中說明的結構不一定按比例描 11 1358757 V0? mmm ~. 100年10月24日修正替換頁 繪。本發明提供植入系統和離子束線總成，其具有散 統’其在主要質量分析器之前選擇性地預散射低能量離子 束，以促進離子束的傳送而沒有離子束爆發，並且也允許 較高能離子束直接通到主要質量分析器。低能量植入系統 和離子束線總成的幾個範例因此在下文提出，以說明本發 明的各種觀點》但是，應理解本發明可以具優點地用於在 此說明以及描述之外的離子植入器系統，包括具有加速度 組件的高能植入器。 圖2說明一個範例離子植入系統丨丨〇，其具有根據本發 明的一個散射系統1 4〇。系統丨i 〇包括終端i i 2、離子束線 總成114以及末端站116,其中終端112包括由高壓電源 122提供動力的離子源12〇，其產生並且導引抽取的離子束 1 24a到離子束線總成1 14 ^離子束線總成i丨4從離子源丨2〇 傳送離子到末端站1 16，並且包括離子束導管132和質量分 析器126 ’其中散射系統140位於源丨2〇附近的離子束線入 口。圖3A-3H說明離子束線總成丨14a的可能實施例，其具 有一個散射系統140a ’並且圖4A和4B說明另一個範例離 子束線總成114b，其具有根據本發明在植入系統n〇中的 散射系統140b。如在圖3A-3C、4A和4B更進一步說明的 範例，離子源12〇產生帶正電離子’其使用一或是更多負 偏壓抽取電極12〇b從電漿室12〇a中抽取’而正離子形成抽 取的離子束丨24a，其被導引通過離子束線總成ιΐ4中的一 個離子束路徑，在第一操作模式到達末端站116。 根據本發明，散射系統14〇接收抽取離子束12“，並 12 ·ν·众 ** - f年月日修正替換頁 __________ 且選擇性傳送抽取離子- ———J---- 束124a到貝量分析器126或是導引 放射的離子束124b、124c ϊι丨哲β、 ,194K 4C到質I分析器126,散射的離子 束124b、124c比抽取的離早击 範圍的離子^射系統 y U更少非期望質量 ’、、’’ 〇以從抽取離子束124a除去至少 些非期望質量範圍離子的方彳，强埋Μ ^ 的方式選擇性地從抽取的離子束 2導出散射離子束l24b、me，而讓—些或是 質量範圍的離子以離子束124b'124e的形式通過到質量分 析器⑶，在此稱為散射離子束12仆、12讣，其比抽取的離 子束124&具有更少非期望質量的離子。在—個可能的應 用’散射系統140在第一模式與更高能量離子束分開，例 如從離子源' 120中抽取並且被導引到質量分析器126之大 約幾個keV到80_100keV的砷離子束，其沒有被散射系統 刚影響。在第二模式中，低能量離子束例如幾㈣或更少 能量的硼離子束在系統14〇中預散射，而散射離子束124卜 124C(例如具有更高硼含量）提供到質量分析器126。 起始抽取離子束124a之一些非期望組成的預散射，降 低了在散射系統丨4〇和質量分析器丨26之間離子束線總成 1 14部份的離子束電流，因而相應地降低了在其中的空間電 荷效應。這允許抽取離子電流的增加，同時安全地運送低 能量離子束124b、124c而沒有離子束爆發，以及/或是降低 離子束對沿著散射系統140以及質量分析器126之間的入 口漂移距離中之離子束爆發敏感性，當與傳統植入器比較 時為更低之敏感性。可以使用任何型式的散射系統丨4〇而 沒有離開本發明範圍，其選擇性地將抽取的離子束124a送 13 1358757 ,.λ〇^λ· 年月曰修正替換頁 =質量分析器126或是導引散射的離子束iI7b. i24c|^ 貝里刀析盗12ό，使得散射的離子束124b、124c比抽取的 離子束124a具有更少非期望質量範圍的離子。 在下面示範並且描述的範例内，散射系統14〇包括可 在政射模式内操作的電磁鐵，以產生至少兩個不同指向的 偶極磁場。當提供能量時，磁場將抽取的離子束124a偏斜 通過個解析結構，以除去一些或是全部非期望質量範圍 的離子，並且導引最終散射離子束124b、124c到主要質量 刀析益126作最後的質量分離，而產生從質量分析器126 穿過在離子束線總成出口之最後解析孔隙134提供到末端 站116的最終質量分析離子束124d。在第一操作模式裡， 散射系統1 40係去能量態的，因而抽取的離子束丨2牝實質 上沒有改變地通過散射系統14〇到質量分析器126<；當散射 系統140開啟時，此雙模操作使低能量離子束更優化的傳 送變得容易，而同時允許植入系統11〇支援更高能離子束， 其中本發明的散射系統14〇可以具優點地設計以安裝到現 有的植入器裡，在許多場合只需要很少或是沒有修改。 圖3 A-3Η說明圖2範例離子植入系統丨丨〇之離子束線 總成1 14a的一個實施例。離子束線總成i 14a包括一個散射 系統140a，其接收從離子源12〇中抽取的離子束12乜，和 包括質量分析器126a，質量分析器在第一模式内接收抽取 的離子束124a(圖3A和3C)或是在第二模式内接收從散射 系統140a來的散射離子束124b(圖3B)，並且導引具有期望 質量範圍之離子的質量分析離子束124d到末端站116(圖 14 1358757 ΙΟίΠΌΓΤΦ*- 1年月日修正替換頁 100年10月24日修正替換頁 羲 2) 〇 如在圖3Α裡說明的’範例散射系統HOa包括3個電 磁鐵151、152和153，以及一個具有一或更多阻擋表面和 孔1 62的解析結構丨6〇，其位於離子源丨2〇的附近在離子束 線總成1 1 4 a的入口端。任何形式的磁場產生元件可以在本 發明範圍内使用，包括但不限定電磁鐵、永久磁鐵以及/或 是其結合。在圖3A的第一操作模式裡，磁鐵151_153是關 閉的（例如去能量），允許抽取的離子束124a通過散射系統 140傳送，而沒有修改地沿著第一路徑到質量分析器。 圖3B和3D_3H說明散射系統M〇a之第二操作模式， 其^提供磁鐵151-153能量以在散射系統购内建立偶極 磁场。如圖3B中所示’磁鐵151_153的磁場合作地導引離 開起始第一路徑的抽取離子束ma，穿過一個雙重曲道路 徑到達解析結構160。如此放置的解析結構16〇和孔162使 仔非期望離子通常被結冑’的阻擔表面攔截或是阻擔， 並且期望質量範圍的離子通過孔162以形成散射離子束 124b ,然後由散射系統導引這些期望離子回到第一路徑 上而放射離子束l24b被提供到主要質量分析器⑵&的入 的，的實施例中，解析結構⑽通常是固定 Lr 作模式(圖3A)裡結構16。不阻擋抽取離 =:ΓΓ離子源12°到…析…傳送： 射糸統――個替代的可能實施例，：: 、口構⑽以―操作模式裡的第—位置以及在第 15 丄㈣/37 上、 , ^，…， 1〇〇年ίο月24日修正替摻 式裡的第二位署門日ί_____ _______、 160不……曰疋可移動的，在第一位置時解析結構 ,.1073-4 年月日修正替換頁 160不阻擋沿著第攸斤 丨儿且吋阱啊菇 4…者第一路徑之抽取離子束124a通過，在第二 位置中解析結構1 60至少部分阻栲拙 _ v司刀阻擋抽取的離子束124a沿著 弟一路徑的通過。盆杳 ，、他貝她例在本發明範圍内是可能的， 此籬；提供解析結構160’其至少攔截非期望質量範圍的- 並且在第二模式料至少—㈣望質量範圍的離 子到質量分析器。 也參考圖3D-3H，冑3D更詳細說明在散射系統i術 裡的磁鐵151·153以及解析結構⑽，並且圖3Ε·3Η提供說 明偶極磁場和散射系統陶的造成側向離子束方向的截 面圖，該等截面係沿著圖3D裡相應切割線3e_3e、3f_3f、 3G-3G以及3H-3H所取出的。圖3〇說明在第二模式内的一 個操作範例，在其中期望㈣BU植人晶圓，而源12〇提 供包含B11和一個-或更多非期望質量之組成（例如在圖从 在電漿室12〇a裡&叫源氣體抽取產生的^^以及例如 BFjo BF2)的抽取離子束124a。 抽取的離子束124a從離子源120沿著第一路徑提供， 並且最初遇到在第一磁鐵151的第一磁場。第一磁鐵包括 上極片和下極片151a和151b，其中第一偶極磁場線從下極 片151b(例如北極）到上極片151a(例如南極），造成離子束 124a中離子向左的側向力，如圖3E所示（例如在圖3d裡向 上）。抽取的離子束124a因此導引離開第一方向的第一路 徑’朝向第二偶極磁場152。圖3F和3g分別說明在第二磁 鐵152内的離子束124a，第二磁鐵152分別具有上極片和 16 1358757 修正麵 1GG年Η)月24日修正替換頁 下極片，產生具有從上極片i52a到下極片^52b - 場。第二磁場導引柚取的離子束124a向右離開第一方向回 到第二方向，並·且也把離子束124a導引回到第一路徑（例如 在圖3D裡回去朝著解析結構16〇)。 因此磁鐵151-153的場以及解析結構16〇的位置係使 付至少一些非期望質量範圍的F+、BF,和BF2離子被導引 到解析結構160的阻擋表面，同時至少一些期望的β1ι離 子導引通過解析結肖160的孔162，以形成散射的離子束 124b。在此說明範例内磁鐵151到153可以建造為單—的 次總成，具有相對裝配的彎曲纏繞，以便提供第一和第三 偶極磁鐵151和153,這些偶極磁鐵具有相反於中央或是第 一偶極磁鐵152的磁場指向，以便在雙曲道路徑中實質上 偏斜抽取離子纟124a，而在說明的範例裡不需要回返軛 鐵’因為通過第一和最後磁鐵151矛口 153的磁通量透過中 心磁鐵152而返回。 一旦期望的離子已經通過解析結構160裡的孔162，造 成的散射離子束124b將遇到第三磁鐵153,如在圖3H進一 步說明。磁鐵153包括產生不同於第二磁鐵152第二磁場 指向之第三磁場的上以及下極片15“和i53b。第三磁鐵Η] 的場線從下極# 153b延伸到上極片153a，並且如在圖3〇 和3H裡說明的那樣將力作用於離子束12仆上，導引散射 的離子束124b沿著第—路徑回來。因此，由磁鐵ΐ5ι-⑴ 提供的磁場提供一個雙重曲道形的次路徑，沿著它導引離 子束12乜以在第二操作模式内、傳送所得散射離子束124b 17 到質量分析 起始移除（例 器126之别 如散射）。Day Correction Replacement Page October 24, 2014 Correction Replacement Page Extracting the salty beam selectively removes ions from the non--_____ 曰/ 望, so lower the ion beam smear before the main berth analyzer. The machine, while allowing direct supply of high energy ion beams to the main mass analyzer without pre-scattering. In one aspect of the invention, an ion implantation system is provided that includes a source of ions to produce a extracted ion beam - a scattering system located adjacent the ion source to receive the extracted ion beam and a receiving ion beam from the scattering system Or a mass analyzer that scatters the ion beam and an end station located downstream of the mass analyzer. The scattering system selectively conveys the extracted ion beam from the ion source to the mass analyzer or directs the scattered ion beam to the mass analyzer, the scattered, sub-beam having less than the undesired mass range of the extracted ion beam ion. Since the scattering system uses only the low energy extracted ion beam, which can be scattered over a very short distance, the effect of space charge expansion due to the entire extracted ion beam is limited. In the exemplary embodiments described and illustrated below, the scattering system includes a plurality of magnets to provide a dipole magnetic field proximate the ion beamline assembly inlet, and selectively directs the extracted ion beam to an analytical structure that intercepts undesired The mass of ions and the desired mass of ions pass through to the main mass analyzer. The scattering system magnet is configured in an example to direct the extracted ion beam through a double d〇g_leg path containing the analytical structure and to redirect the scattered ion beam along the initial extracted ion beam path to Main quality analyzer. In another implementation, the scattering system selectively redirects the extracted ion beam along a single track path for scattering, and the scattered ion beam is provided along the second path to the primary mass analyzer. Another aspect of the present invention provides an ion beam line assembly for transferring ions from a 10 1358757 介·Ίϋ·2 4--p month correction replacement page l__ — . ^ n ^ y^SL· ion source In the ion implant L---__________ ^, the end of the system. The ion beam enthalpy includes: a scattering system α α receives the extracted from the ion source: a mass analyzer receives the extracted ion beam from the scattering system: the scattered ion beam, and directs ions of a desired mass range to End station. The scattering system selectively extracts the scattered ions from the ion bomb S-analyss extracted from the source or the source, and scatters the beam and extracts the ion beam. Another aspect of the present invention compared to having zero less undesired mass ranges provides a method of producing a mass analytical ion beam in an ion implantation system. The method includes providing a sampled ion beam having a desired mass range and an undesired mass range of ions, and selectively transmitting the extracted ion beam to a mass analyzer or deriving the scattered ion I from the extracted ion east and providing scattered ions The beam is analyzed by mass analysis g, while the scattered ion beam has fewer ions than the (four) ion beam. The method further includes removing at least some of the undesired mass range of ions from the scattered ion beam or the ion beam from the pomelo using a mass analyzer to produce a mass analytical ion beam. The following description and the annexed drawings are set forth to illustrate the particular aspects of the embodiments of the invention. It indicates a number of different methods that can use the principles of the present invention. The present invention will now be described with reference to the drawings, wherein like reference numerals are used to refer to the like elements, and the structures described herein are not necessarily to scale. Page painted. The present invention provides an implant system and an ion beam line assembly having a diffuse 'selectively pre-scattering a low energy ion beam prior to the primary mass analyzer to facilitate ion beam transport without ion beam bursting, and also allowing The higher energy ion beam passes directly to the main mass analyzer. Several examples of low energy implant systems and ion beam assembly are therefore set forth below to illustrate various aspects of the invention. However, it should be understood that the present invention can be advantageously utilized for ion implantation outside of the description and description herein. The inlet system includes a high energy implanter with an acceleration assembly. Figure 2 illustrates an exemplary ion implantation system 具有 having a scattering system 14 根据 according to the present invention. The system 丨i 〇 includes a terminal ii 2, an ion beam line assembly 114, and an end station 116, wherein the terminal 112 includes an ion source 12A powered by a high voltage power source 122 that generates and directs the extracted ion beam 1 24a to the ion beam The line assembly 1 14 ^ ion beam line assembly i 丨 4 transfers ions from the ion source 〇 2 到 to the end station 1 16 and includes an ion beam tube 132 and a mass analyzer 126 'where the scattering system 140 is located near the source 丨 2 〇 Ion beam line entrance. 3A-3H illustrate a possible embodiment of an ion beam line assembly 丨 14a having a scatter system 140a ' and FIGS. 4A and 4B illustrate another example ion beam line assembly 114b having an implant system in accordance with the present invention. The scattering system 140b in the crucible. As further illustrated in Figures 3A-3C, 4A and 4B, ion source 12 produces positively charged ions 'which are extracted from plasma chamber 12a using one or more negative biased extraction electrodes 12〇b The positive ions form an extracted ion beam 丨 24a that is directed through one of the ion beam lines ι 4 to reach the end station 116 in a first mode of operation. In accordance with the present invention, the scatter system 14 〇 receives the extracted ion beam 12" and 12 ν ν ** - f 月 修正 修正 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且To the volume analyzer 126 or the guided ion beam 124b, 124c ϊι丨β, 194K 4C to the mass I analyzer 126, the scattered ion beam 124b, 124c is extracted from the ionizing range of the early strike range. System y U is less undesired in quality ', '' 〇 to remove at least some of the ions of the undesired mass range from the extracted ion beam 124a, selectively extracting scattered ions from the extracted ion beam 2 in a manner of strong Μ ^ Beams l24b, me, and let some or mass range ions pass in the form of ion beam 124b'124e to mass analyzer (3), herein referred to as scattered ion beam 12 servant, 12 讣, which is compared to extracted ion beam 124 & Ions with less undesired mass. In a possible application, the scattering system 140 is separated from the higher energy ion beam in a first mode, for example extracted from the ion source '120 and directed to the mass analyzer 126. An arsenic ion beam of about a few keV to 80_100 keV, It is not affected by the scattering system. In the second mode, a low energy ion beam, such as a few (four) or less energy boron ion beam, is pre-scattered in system 14A, while a scattering ion beam 124 is 124C (eg, has a higher boron The content is provided to the mass analyzer 126. The pre-scattering of some undesired components of the initial extracted ion beam 124a reduces the ion beam line assembly between the scattering system 丨4〇 and the mass analyzer 丨26. The ion beam current, thereby correspondingly reducing the space charge effect therein. This allows for an increase in the extracted ion current while safely transporting the low energy ion beams 124b, 124c without ion beam bursts and/or reducing the ion beam edge The ion beam burst sensitivity in the drift distance between the scattering system 140 and the mass analyzer 126 is less sensitive when compared to conventional implants. Any type of scattering system can be used without Leaving the scope of the present invention, it selectively sends the extracted ion beam 124a to 13 1358757, .λ〇^λ· 年 曰 correction replacement page = mass analyzer 126 or guided scattering The beam iI7b. i24c|^ is smashed so that the scattered ion beams 124b, 124c have fewer ions of undesired mass range than the extracted ion beam 124a. In the example exemplified and described below, the scattering system 14〇 An electromagnet operable in an eccentric mode is included to generate at least two dipole magnetic fields of different orientations. When energy is supplied, the magnetic field deflects the extracted ion beam 124a through an analytical structure to remove some or all of the non- The mass range of ions is desired, and the final scattered ion beam 124b, 124c is directed to the primary mass knife 126 for final mass separation, resulting from the mass analyzer 126 passing through the last resolved aperture 134 at the ion beam assembly outlet. A final mass analysis ion beam 124d is provided to the end station 116. In the first mode of operation, the scattering system 140 is de-energized, and thus the extracted ion beam 牝2牝 is substantially unchanged through the scatter system 14 to the mass analyzer 126<; when the scatter system 140 is turned on, this Dual mode operation facilitates more optimized delivery of low energy ion beams while allowing the implant system 11 to support higher energy ion beams, wherein the scattering system 14 of the present invention can be advantageously designed to be mounted to existing implants In many cases, little or no modification is required on many occasions. Figure 3A-3 illustrates an embodiment of the ion beamline assembly 1 14a of the exemplary ion implantation system of Figure 2. The ion beamline assembly i 14a includes a scattering system 140a that receives the ion beam 12A extracted from the ion source 12A, and includes a mass analyzer 126a that receives the extracted ion beam 124a in a first mode ( 3A and 3C) either receive the scattered ion beam 124b from the scattering system 140a in the second mode (Fig. 3B) and direct the mass analytical ion beam 124d having ions of the desired mass range to the end station 116 (Fig. 14 1358757 ΙΟίΠΌΓΤΦ*- 1 year, month, and day correction replacement page, October 24, 2014, correction replacement page 羲 2) As illustrated in Figure 3, the example scattering system HOa includes three electromagnets 151, 152, and 153, and one has One or more blocking surfaces and an analytical structure 孔6〇 of the aperture 162 are located near the ion source 丨2〇 at the inlet end of the ion beam assembly 1 14 a. Any form of magnetic field generating component can be used within the scope of the present invention, including but not limited to electromagnets, permanent magnets, and/or combinations thereof. In the first mode of operation of Figure 3A, the magnet 151_153 is closed (e.g., de-energized), allowing the extracted ion beam 124a to be transmitted through the scattering system 140 without modification along the first path to the mass analyzer. Figures 3B and 3D-3H illustrate a second mode of operation of the scattering system M〇a, which provides the energy of the magnets 151-153 to establish a dipole magnetic field within the scattering system. The magnetic field of the 'magnet 151_153 as shown in Fig. 3B cooperatively guides the extracted ion beam ma leaving the first path to the analytical structure 160 through a double curved path. The analytical structures 16 and 162 thus placed cause the undesired ions to be intercepted or blocked by the resisting surface of the crucible', and it is desirable that a mass range of ions pass through the aperture 162 to form a scattered ion beam 124b, which is then scattered by the scattering system. In embodiments where the desired ion is directed back to the first path and the ion beam l24b is provided to the primary mass analyzer (2) & the analytical structure (10) is typically a fixed Lr mode (Fig. 3A). . Do not block the extraction away =: ΓΓ ion source 12 ° to ... analysis ... transmission: 糸 ―― - an alternative possible embodiment, :::, mouth structure (10) in the "operating mode" - position and in the 15th (four) /37 On, , ^,..., 1〇〇 ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二The .1073-4 year-and-month correction replacement page 160 does not block the passage of the extracted ion beam 124a along the first path of the 攸 丨 吋 吋 菇 4 4 , , , , , , , , , , , , , 解析 解析 解析 解析 解析 解析The 栲拙_v knife blocks the passage of the extracted ion beam 124a along the path of the younger brother. It is possible within the scope of the invention to provide a analytic structure 160' which intercepts at least the undesired mass range - and in the second mode at least - (four) the mass range of ions to mass Analyzer. Referring also to Figures 3D-3H, 胄3D illustrates in more detail the magnets 151·153 and the analytical structure (10) in the scattering system i, and Figure 3Ε·3Η provides a description of the direction of the lateral ion beam caused by the dipole magnetic field and the scattering system. A cross-sectional view taken along the corresponding cutting lines 3e_3e, 3f_3f, 3G-3G, and 3H-3H in Fig. 3D. Figure 3A illustrates an example of operation in a second mode in which (four) BU implanted wafers are desired, while source 12 provides a composition comprising B11 and one or more undesired masses (eg, in the graph from the plasma chamber) 12 〇 a & is called source gas extraction generated ^ ^ and extracted ion beam 124a such as BFjo BF2). The extracted ion beam 124a is provided from the ion source 120 along the first path and initially encounters the first magnetic field at the first magnet 151. The first magnet includes an upper pole piece and a lower pole piece 151a and 151b, wherein the first dipole magnetic field line passes from the lower pole piece 151b (for example, the north pole) to the upper pole piece 151a (for example, the south pole), causing ions in the ion beam 124a to the left. Lateral force, as shown in Figure 3E (e.g., upward in Figure 3d). The extracted ion beam 124a thus directs the first path 'away from the first direction' toward the second dipole magnetic field 152. 3F and 3g illustrate the ion beam 124a in the second magnet 152, respectively, the second magnet 152 has an upper pole piece and a 16 1358757 correction surface 1GG year). The 24th day correction replacement page lower pole piece is produced with the upper pole. Slice i52a to lower pole piece ^52b - field. The second magnetic field directs the ion beam 124a of the pomelo to the right away from the first direction back to the second direction, and also directs the ion beam 124a back to the first path (eg, back to the analytical structure 16 in FIG. 3D) 〇). Thus the fields of the magnets 151-153 and the position of the analytical structure 16A are such that at least some of the undesired mass ranges of F+, BF, and BF2 ions are directed to the blocking surface of the analytical structure 160 while at least some of the desired β1 ion guides The aperture 162 of the junction 160 is analyzed to form a scattered ion beam 124b. It is noted herein that the example inner magnets 151 through 153 can be constructed as a single-secondary assembly having relatively assembled curved windings to provide first and third dipole magnets 151 and 153 which are opposite to the center or The magnetic field of the first dipole magnet 152 is directed to substantially deflect the ion trap 124a in the hyperbolic path, while in the illustrated example there is no need to return the yoke 'because the first and last magnets 151 pass through the spoke 153 The magnetic flux is returned through the center magnet 152. Once the desired ions have passed through the apertures 162 in the resolution structure 160, the scattered ion beam 124b will encounter the third magnet 153, as further illustrated in Figure 3H. The magnet 153 includes a field line that generates upper and lower pole pieces 15" and i53b. The third magnet Η] that is different from the third magnetic field to which the second magnetic field of the second magnet 152 is directed, and extends from the lower pole #153b to the upper pole piece 153a, and The force is applied to the ion beam 12 as illustrated in Figures 3A and 3H, and the guided scattered ion beam 124b is returned along the first path. Therefore, the magnetic field provided by the magnet ΐ5ι-(1) provides a double track. A secondary path is formed along which the ion beam 12 is directed to transmit the resulting scattered ion beam 124b 17 to the mass analysis initiation (in the case of scattering, such as scattering).
100年10月24日修正替換頁 進行一些或是全部非期望離子的 虫〇圖 m ^ 所不，這個特別的實施例方便在第二操作模 二：提供散射離子束124b進入質量分析$ 126中，而沿 I弟—操作模式用於抽取離子束124a的相同路徑，而質量 分^器126a可以不需要改變現有的植入器ιι〇來於内部安 裝散射系‘统140a。*過’注意到因為散射離子束12仆在第 二j式（圖3B)提供到達主要質量分析器126&，其距質量分 析态入口的距離比在第一模式(圖3a)抽取離子束以乜提供 1達的距離要短—些，所以在質量分析器和最終解析 孔隙134之間的出口漂移距離，以及/或是孔的大小可 能需要調整’分別地或是依照質量分析器ma的聚焦特性 起調整’以補償入口漂移長度的差別（例如漂移的物體距 離）。 將散射系統l4〇a放置於入口漂移距離的一 在這方面 個小的初始部分是合音#，兮· λ π # ，刀疋D思的，S亥入口漂移距離介於源12〇和 質量分析器126a之間。在圖3A_3H的範例裡沿著散射系 統MOa次路徑的彎曲半徑大約是5厘米，以提供積極的質 量分離（例如散射）來降低散射離子束124b中期望離子所看 見的空間電荷效應。注意到散射系統！術的f量分離性能 對整體質量分離性能是不重要的，而只f提供某種粗略質 量分析的措施。以硼離子束124為例子，散射系統14〇&只 需要具有相對低的質量解析力或是大約2/1的解析能力，以 有效分開全部或是幾乎全部原子量大約u的Bu離子，以 18 1358757 離開所有或是大多數最靠近的主要組成 19,圖30的F + )。因此，系統14〇a相對於在第二操作模式 裡提供的相對低能量（例如大約在500ev到大約3kev的範 例）離子束，最好具有相當強的聚焦特性（例如小的彎曲2 徑），其中造成的起始散射乃降低運送的離子束電流量，並 且因此降低對於沿著在散射系統140a和質量分析器126a 之間的剩餘入口漂移長度之空間電荷效應的敏感性。 圖4A和4B說明本發明的另—個可能的實施例，其中 在離子束線總成114b中使用可能較小之散射系統14〇^在 這範例内，只有兩磁鐵151和152用於系統14〇b中以導 引抽取的離子束通過單一曲道形的替代路徑沿著具有孔 162的解析結構16〇而產生在第二操作模式的散射離子束 124c。圖4八和4B的離子束線總成U4b包括一個散射系統 M〇b，其從離子源120中接收抽取離子束12牦，以及包括 一個稍為修改的質量分析器126b，126b接收在第一模式（圖 著第一路徑之抽取離子束以钝或是在第二模式（圖4b) 沿者第二路徑從散射系統140b來的散射離子束124c。 在圖4 A的第一操作模式裡，散射系統磁鐵1 $ 1和Η 2 是關的，並且允許抽取的離子束ma沿著第―路徑從離子 源/20傳播到質量分析器⑽的入口。質量分析器}鳩 執灯個貝里分離功能，並且提供質量分析離子束124d通 過在離子束線總成114b〇末端之解析孔隙134到末端站 (圖2)在第一操作模式中，提供散射系統磁鐵1 $丨和 152能量以提供第一和第二不同方向的偶極磁場（例如相同 19 ，在上面圖芘和 離開第-路把，並且到一個通常是並行的第二路徑。離子 束124a缺德ά立结 曰— 、、、 者弟二路徑遇到解析結構160，其中期望質 里範圍的離子穿過在其中的孔162(例如由解析結冑16〇阻 撐全部或是大多數的非期望離子），而產生-散射離子束 124c。 。因此著第二路徑導引散射的離子束i 24C到質量分析 盗126b的入口，然後在與圖4A中之抽取離子束124a的不 同位置進入質量分析器126b。結果，目4A和4B的方法 可月b而要具有比上面圖3A3H實施例更寬的磁鐵入口。不 過，這種設計可能允許物體距漂移離的改正，並且可能比 圖3A-3H上述範例更緊密。 报多不同的實施例在本發明範圍内是可能的。在這方 面，雖然上述範例裡初步離子束彎曲通常在質量分析器126 的平面内發生’這不是本發明所必要的，其中在散射系統 14〇的磁場以及在第二操作模式裡離子束12朴、⑽之替 代離子束路徑可以在相對於質量分析器平面的任何角卢。 因此，例如圖3A-3H的散射系統M〇a可以修改以在^或 更多平面的多種方向來彎曲抽取的離子束12牦， 斜通過主要質量分析器126a時，前 丁 則现故些平面不一定是與 離子束124平面同一平面。 、 甚且，雖然在第二操作模式裡範例散射系統14(^和 _b，係、沿著在上述圖3A_3H、4A^化範例之第一模式 使用的相同第-路徑接收抽取的離子I ma，這不是本發 20 1 丨0^〇浐含修正替換頁 明所嚴袼要求的。#度 ____ ^ a, r p. „ 地，線性加速料 心明乾圍内在離子植入糸 之後提批離子植入系、统110裡的主要質量分析器126 〃。以上所說心及描料電磁鐵151.153可以使 …可具有以任何合適構型所蠻曲纏繞的合適材料來建 迨，以在提供能量時產生彳 町座生抽取離子束的選擇性預散射的 场。另外，任何合適的磁場產生元件可以使用，以產生抽 取離子束的選擇性預散射的場，如永久磁鐵可以位於一 個位置以對-抽取離子束124a施加合適的場，把離子束導 引到一個解析結構並且太笛__ 稱亚且在第一知作模式導引所得散射離子 mb' mc到主要質量分析器126，其可以移到第一模 式的另-個位置’使得抽取的離子束⑽在第被 預散射。 雖然本發明已經以一個或更多實施例說明以及描述， 所示範之範例可以改變以及/或是修改而沒有背離如附加申 請專利範圍的精神和範圍。特別針對上面摇述之組成部分 或是結構（區塊、單元、發動機、總成、元件、電路、系統 等等）進行的各種功此’用來描述這種組成部分術語（包括稱 為「方式」的）’除非另外指示，否則是要對應於任何可以 執行所描述構件特定功能的構件或是結構（例如功能上等 效）’即使在結構上不等效於揭露的可執行在此說明之本發 明範例貫施例的功能亦然。另外，雖然本發明的特別的特 徵已經以關於幾個實施例之一的方式透露，這些特徵可以 與其它可忐期望以及對任何給定或是特定應用具優點的實 施例之一或更多其他特徵合併。而且，用於詳細描述和申 21 1358757 10ϋΓΠΤΓ2Γ4 年月日修正替換頁 100年10月24日修正替換頁 包含”、包括"、具有"、"有"、，’配合" 請專利範圍中的術語 或是其他變型所夷这& γρρ ^ ” 所衣違的範圍，這些術語是要以相似於術 語包括有”的方式所含括。 【圖式簡單說明】 圖1係忒明傳統的低能量離子植入系統的示意圖； /圖2係說明具有—個根據本發明一個或更多觀點的散 射系統的範例低能量離子植入系統的示意圖； θ Α係說明在圖2離子植入系統裡離子束線總成實 施例，俯視平面圖，具有顯示在第—模式内的散射系統， 其中散射系統磁鐵關閉以選擇性傳送抽取的離子束沿著第 一路徑到一個質量分析器； 圖係δ兒明在圖3 a離子束線總成的俯視平面圖’具 有在第Μ式提供成1的散射系統磁冑，以導引抽取的離 束L過個具有解析結構的雙重曲道路徑，以產生沿著 第路從導引到主要質量分析器的散射離子束； 圖3C係5尤明圖3 Α和3Β離子束線總成的替代實施例之 俯視平面® ’其中散射系統的解析結構在第一及第二操作 杈式内的第一及第二位置間係可移動的。 ^圖3D係更詳細說明圖3 a和3Β之離子束線總成中的 散射系統磁鐵以及解析結構的俯視平面圖； • θ Ε 3Η係/σ著圖3D相應切割線切割取出的部分側視 圖，其說明在圖3A_3D散射系統中的範例偶極磁場和側向 22 1358757On October 24, 100, the replacement page was modified to perform some or all of the undesired ion maps. This particular embodiment facilitates the second operation of the second mode: providing the scattered ion beam 124b into the mass analysis $126. The operation mode is used to extract the same path of the ion beam 124a, and the mass divider 126a can internally mount the scattering system 140a without changing the existing implanter ιι. *over's note that because the scattered ion beam 12 is served in the second j-form (Fig. 3B) to reach the main mass analyzer 126&, its distance from the mass analysis state inlet is extracted in the first mode (Fig. 3a) to extract the ion beam乜 provides a distance of 1 to be shorter, so the exit drift distance between the mass analyzer and the final parsing aperture 134, and/or the size of the hole may need to be adjusted 'either separately or in accordance with the focus of the mass analyzer ma The characteristics are adjusted 'to compensate for differences in the length of the entrance drift (eg drifting object distance). Place the scattering system l4〇a at the entrance drift distance. In this respect, the small initial part is the chorus #, 兮· λ π # , 疋 疋 思 ,, S 入口 inlet drift distance between the source 12 〇 and the mass Between analyzers 126a. In the example of Figures 3A-3H, the bend radius along the scattering system MOa secondary path is about 5 cm to provide positive mass separation (e. g., scattering) to reduce the space charge effect seen by the desired ions in the scattered ion beam 124b. Notice the scattering system! The f-separation performance of the technique is not important for the overall mass separation performance, and only f provides some measure of rough mass analysis. Taking the boron ion beam 124 as an example, the scattering system 14〇& only needs to have a relatively low mass resolution or an analytical power of about 2/1 to effectively separate all or almost all of the Bu ions of about u in an atomic weight, to 18 1358757 Leaving all or most of the closest major components 19, F + ) of Figure 30. Thus, the system 14A has a relatively strong focusing characteristic (e.g., a small curved 2 diameter) with respect to the relatively low energy (e.g., an example of about 500 ev to about 3 keV) ion beam provided in the second mode of operation, The resulting initial scattering therein reduces the amount of ion beam current delivered and thus reduces the sensitivity to space charge effects along the remaining inlet drift length between the scattering system 140a and the mass analyzer 126a. 4A and 4B illustrate another possible embodiment of the invention in which a possibly smaller scattering system 14 is used in the ion beamline assembly 114b. In this example, only two magnets 151 and 152 are used for the system 14. The scattered ion beam 124c in the second mode of operation is generated in 〇b by the ion beam guided by the extraction through a single track-shaped alternative path along the analytical structure 16〇 having the aperture 162. The ion beam line assembly U4b of Figures 4 and 4B includes a scattering system M〇b that receives the extracted ion beam 12牦 from the ion source 120 and includes a slightly modified mass analyzer 126b, 126b received in the first mode (Illustrated in the first path, the extracted ion beam is blunt or in the second mode (Fig. 4b) along the second path of the scattered ion beam 124c from the scattering system 140b. In the first mode of operation of Figure 4A, scattering The system magnets 1 $ 1 and Η 2 are off and allow the extracted ion beam ma to propagate from the ion source / 20 along the first path to the inlet of the mass analyzer (10). The mass analyzer is configured to perform a Berry separation function. And providing a mass analysis ion beam 124d through the analytical aperture 134 at the end of the ion beamline assembly 114b to the end station (Fig. 2) in a first mode of operation, providing scattering system magnets 1 丨 and 152 energy to provide the first And the dipole magnetic field in the second different direction (for example, the same 19, in the above figure 离开 and leaving the first way, and to a second path that is usually parallel. The ion beam 124a lacks the entanglement -,,, the brother The second path encounters an analytical structure 160, wherein ions of a desired range are expected to pass through a hole 162 therein (for example, by analysing the crucible 16 〇 all or most of the undesired ions), resulting in a -scattering ion beam 124c. The path directs the scattered ion beam i 24C to the entrance of the mass analysis thief 126b and then enters the mass analyzer 126b at a different location than the extracted ion beam 124a in Figure 4A. As a result, the methods of items 4A and 4B may be monthly. There is a wider magnet inlet than the embodiment of Figures 3A3H above. However, this design may allow for correction of drift away from the object and may be closer than the above examples of Figures 3A-3H. Many different embodiments are within the scope of the present invention In this regard, although preliminary ion beam bending typically occurs in the plane of mass analyzer 126 in the above examples 'this is not necessary for the present invention, where the magnetic field of the scattering system 14 is and in the second mode of operation. The ion beam path of the ion beam 12, (10) may be at any angle relative to the plane of the mass analyzer. Thus, for example, the scattering system M〇a of Figures 3A-3H may be modified to The extracted ion beam 12牦 is curved in various directions of the plane, and when obliquely passing through the main mass analyzer 126a, the front planes are not necessarily in the same plane as the plane of the ion beam 124. Even, although in the second mode of operation The example scatter system 14 (^ and _b, receives the extracted ions I ma along the same first path used in the first mode of the above-described Figures 3A-3H, 4A, which is not the present 20 1 丨 0 ^ 〇浐 修正 修正 修正 ^ 。 # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # Primary quality analyzer 126 〃. The above-described heart and drawing electromagnets 151.153 may be constructed such that they have a suitable material that is entangled in any suitable configuration to provide selective pre-scattering of the extracted ion beam of the Sakamachi-supplied ion beam when energy is supplied. field. Additionally, any suitable magnetic field generating element can be used to create a selectively pre-scattered field of the extracted ion beam, such as a permanent magnet located at a location to apply a suitable field to the extracted ion beam 124a, directing the ion beam to a The structure is resolved and the flute __ is said to be sub- and in the first known mode to direct the resulting scattered ions mb' mc to the main mass analyzer 126, which can be moved to another position of the first mode 'so that the extracted ion beam (10) Pre-scattered at the first. While the invention has been illustrated and described with reference to the embodiments of the embodiments In particular, the various features of the above-described components or structures (blocks, units, engines, assemblies, components, circuits, systems, etc.) are used to describe such component terms (including ' unless otherwise indicated, it is intended to correspond to any component or structure (eg, functionally equivalent) that can perform the specified function of the described component' even if the structure is not equivalent to the disclosed executable. The functions of the examples of the present invention are also the same. In addition, while the particular features of the invention have been disclosed in terms of one of several embodiments, these features may be combined with one or more other embodiments that may be desirable and advantageous for any given or particular application. Feature merge. Moreover, for detailed description and application 21 1358757 10ϋΓΠΤΓ2Γ4 月月日修正 replacement page 100 October 24 revision replacement page contains ", including ", has ", "有",, 'coordination" Terms in the scope or other variants are in the range of & γρρ ^ ", which are to be included in a similar way to the term." [Simplified Schematic] Figure 1 Schematic diagram of a conventional low energy ion implantation system; / Figure 2 is a schematic diagram illustrating an exemplary low energy ion implantation system having a scattering system in accordance with one or more aspects of the present invention; θ Α is illustrated in Figure 2 An ion beam assembly embodiment in the system, in a top plan view, having a scattering system shown in a first mode, wherein the scattering system magnet is turned off to selectively deliver the extracted ion beam along the first path to a mass analyzer; The top view of the ion beam line assembly in Fig. 3 has a scattering system magnetic field provided in the first equation to guide the extracted off-beam L with an analytical junction. a double curved path to create a scattered ion beam directed from the first path to the primary mass analyser; Figure 3C is a top plan view of an alternative embodiment of the 5 Umming Figure 3 and 3Β ion beamline assemblies ' wherein the analytical structure of the scattering system is movable between the first and second positions within the first and second operational modes. ^ Figure 3D is a more detailed illustration of the ion beam assembly of Figures 3a and 3A A top plan view of the scattering system magnet and the analytical structure; • θ Ε 3Η/σ Figure 3D is a partial side view of the corresponding cut line cut, illustrating an example dipole magnetic field and lateral 22 1358757 in the 3A-3D scattering system
ΠΤΓ2 4- 年月日修正替換頁 圖4A 6兒明在圖2離子植入系統中離子束線總成的另 範例實施例之俯視平面圖，其具有顯*在第―模式的散射 系統”中散射系統磁鐵關閉以選擇性沿著第—路徑傳送 抽取離子束到達質量分析器；以及 圖4B係b月圖4A中離子束線總成的俯視平面圖，盆 具有在第二模式提供能量到散射系、統磁鐵，以導引抽取離 束、過八有解析結構的單一曲道路徑以產生散射離子 ’散射離子束沿著第二路徑導引到主要質量分析器。 【主要元件符號說明】 10 .離子植入系統 12 ·終端 14 ·離子束線總成 16 ·末端站 20 ·離子源 22 ·高壓電源 24 .離子束 26 ·質量分析器 3〇 ·晶圓 3 2 ·離子束導管 34 ·解析孔隙 11 0 ·離子植入系統 112 .終端 114、114a、114b .離子束線總成 23 1358757 mo. to. 2 4 1年月日修JL替換頁 100年10月24日修正替換頁 116· 120 · 120a 120b 122 · 124 · 124a 124b 124d 126、 130 · 132 · 134 · 140、 151 ' 151a 151b 160 · 162 · 末端站 離子源 •電漿室 •抽取電極 高壓電源 硼離子束 •抽取離子束 、124c ·散射離子束 •最終質量分析離子束 126a、126b ·質量分析器 晶圓 離子束導管 解析孔隙 140a、140b .散射系統 152、153 .電磁鐵 、152a、153a .上極片 、152b、153b .下極片ΠΤΓ 2 4-Year-Day Correction Replacement Page Figure 4A shows a top plan view of another exemplary embodiment of the ion beam assembly in the ion implantation system of Figure 2, which has a scattering in the first-mode scattering system The system magnet is turned off to selectively transport the extracted ion beam along the first path to the mass analyzer; and Figure 4B is a top plan view of the ion beam assembly in Figure 4A of the month, the basin having energy in the second mode to the scattering system, a magnet to guide the extraction of the off-beam, a single curved path with an analytical structure to generate scattered ions. The scattered ion beam is directed along the second path to the main mass analyzer. [Key Symbol Description] 10. Ions Implant system 12 · Terminal 14 · Ion beam assembly 16 · End station 20 · Ion source 22 · High voltage power supply 24 . Ion beam 26 · Mass analyzer 3 〇 · Wafer 3 2 · Ion beam tube 34 · Analytical aperture 11 0 · Ion implantation system 112. Terminals 114, 114a, 114b. Ion beam assembly 23 1358757 mo. to. 2 4 1 month repair JL replacement page 100 years October 24 revision replacement page 116 · 120 · 120a 120b 122 · 124 · 124 a 124b 124d 126, 130 · 132 · 134 · 140, 151 ' 151a 151b 160 · 162 · End station ion source • Plasma chamber • Extract electrode high voltage power supply boron ion beam • Extract ion beam, 124c • Scatter ion beam • Final mass Analytical ion beam 126a, 126b - mass analyzer wafer ion beam tube analysis aperture 140a, 140b. scattering system 152, 153. electromagnet, 152a, 153a. upper pole piece, 152b, 153b. lower pole piece
解析結構 子L 24Analytic structure sub L 24