TWI354032B - A method for depositing a material layer onto a su - Google Patents

Description

Γ 354032 IX. Description of the Invention [Technical Jaw Domain of the Invention] Embodiments of the present invention generally relate to depositing a film by chemical vapor deposition. In particular, the present invention relates to a method for depositing a thin film onto a large area substrate. [Prior Art] In recent years, organic light-emitting diode (OLED) displays have advantages such as fast response time, large viewing angle, high contrast, light weight, low power consumption, and compliance with flexible substrates. ) is more commonly used in a variety of display applications. Since 1987, CW Tang and SA Slyke have pointed out that the practical application of an organic light-emitting diode (〇LED) display can be achieved by efficiently emitting electroluminescence (EL) from a double-layer organic light-emitting device. This is achieved by illuminating two layers of organic material between the two electrodes. The two layers of organic material differ from the previous use of only a single organic layer, which includes a layer for unipolar transmission (holes) and a layer for electroluminescence. The operating voltage required for the Led display to display. In addition to the organic materials used in OLEDs, a number of polymers have been developed for use in small molecule, elastomeric organic light emitting diode (F〇LED) and polymer light emitting diode (PLED) displays. Many of these organic and polymeric materials are used to fabricate complex 'multilayer components' on a variety of substrates, making them a variety of transparent multicolor display applications (eg, thin flat panel displays (FpD), electro-optical organic lasers, and organic optical amplifiers). Ideal material. 5 (3) 4032 In the past many years, the organic layer in the display has evolved into a multi-layer structure with each layer having a different function. Fig. 1 is a view showing an example of an OLED element structure constructed on a substrate. In a transparent anode layer. After deposition of 2 (e.g., a singular tin oxide (Ιτο) layer) on the substrate 101, a stack of organic layers may be deposited on the anode layer 1〇2. The organic layer may include an injection hole layer 103, a transmission hole layer 1〇4, an emission layer 1〇5, a transfer electron layer 106, and an injection electron layer 1〇7. It should be noted that when constructing a LED cell, not all 5 layers of organic materials are required. For example, in some cases, only one transmission hole layer 104 and one emission layer 1〇5 are required. After completion of the organic layer, a metal cathode 1〇8 is deposited on top of the stack of organic layers. When a field potential of 11 〇 (typically a few volts) is applied to the 〇Led cell, the injected positive and negative charges will recombine in the emissive layer 105 to produce light 120 (ie, electro-induced) The structure of the organic layer and the selected anode and cathode are used to maximize the recombination step in the diverging layer, thereby maximizing the light emitted from the OLED element. The lifetime of the display is rather short, characterized by The main reason for the decrease in efficiency and the rise in driving potential is that the organic or polymeric material is inferior to form non-emissive dark spots, and the organic layer is at about 5 5 C or The above temperature is caused by crystallization, for example, the material for transporting holes will crystallize at room temperature. Therefore, a low-temperature deposition process of these materials is required, for example, about 100 C or lower. In addition, material deterioration and formation do not occur. The reason for the dark spots of luminescence also includes the incorporation of moisture or oxygen. For example, it is known that exposure to a humid environment induces the appearance of a cathode that is generally used as an emissive layer. The delamination occurs, so the dark spot of the non-luminous 6 1354032 will become larger with time. In addition, it is known that exposure to air or gas will also turn into cathodic oxidation, and once the organic material reacts with water or oxygen, The organic material printing is no longer functional. At present, most of the display manufacturers use metal cans or glass can materials as embedding layers to protect the organic materials in the components from water or oxygen. An example of OLED element 200 on a substrate 2〇1 is encapsulated by a glass or metal embedding material 205. The element 2 includes an anode layer 202 and a cathode layer 2〇4 and has a plurality of layers of organic material. 2〇3. The metal or glass material 205 is attached to the substrate 2〇1 like a cover with a uv hardenable epoxy 206. However, moisture can easily pass through the epoxy 206 and damage The device can be used. Other materials prepared by plasma enhanced chemical vapor deposition (PECVD), such as tantalum nitride (SiN), yttrium oxynitride (Si〇N), and yttrium oxide (SiO) can also be used. Inorganic materials such as such An embedding/barrier layer that is effective against water vapor, air, and corrosive ions. However, it is very difficult to perform a low-temperature deposition process to produce such an inorganic embedding material that can resist moisture, because the resulting film is less dense and has It is important that the high-poor pinhole-like structure β is that the residual moisture in the organic layer causes the Mb to crystallize, even in the embedded component. In addition, the oxygen trapped in its t during embedding Water vapor will infiltrate the OLED component that will contact the cathode and the organic material, thus causing the formation of dark spots, which is the main cause of failure of the OLED component. Therefore, a good embedding/barrier layer also needs to be low. Water Vapor Transmission Rate (WVTR) Other problems arise when thin film inorganic tantalum nitride (SiN) related materials are used as embedding/barrier layers. If the embedding layer has a sufficient thickness, it can well contain 7 1354032 oxygen and moisture 'which is usually too hard, brittle, and detached from the substrate surface due to surface adhesion of the board or high temperature and high humidity environment. If in order to improve the viscosity and thinning of the hot layer, it will result in the inability to act as water due to insufficient thickness. This will require additional layers or other means to solve the problem. Therefore, there is a need for a method for low temperature deposition of embedding/barrier layers. 'Making the substrate with better water barrier properties and components under the heat. SUMMARY OF THE INVENTION Accordingly, embodiments of the present invention generally provide an encapsulating layer onto a substrate, and a substrate for depositing a layer of material onto a substrate is placed in a process chamber. Transferring a mixture of the material and transferring a hydrogen gas into the process chamber to improve barrier properties; controlling the substrate temperature to about 1 〇〇t or less; a plasma; and depositing the material layer onto the substrate. In another embodiment, the present invention provides a method for use on a substrate, comprising: placing a substrate in a mixture consisting of the embedded layer precursor and transferring the process chamber; and controlling the substrate temperature Producing a plasma in the process chamber to about 100 ° C or below: and depositing the embedding layer to the buried layer having a water vapor transmission at about 38 ° C and about 90% humidity is too thick to be able to form a gap with the base, especially A barrier layer that will be embedded in gas in stability. Problem. Force performance on a large area of substrate to protect the deposition of an embedding layer • Equipment. In one embodiment, the method comprises: depositing a water barrier of the material layer composed of a layer precursor into a process chamber to deposit a buried layer into the process chamber; and transferring a hydrogen gas into the process. The method further comprises a water-blocking effect on the substrate that has a permeation rate not higher than 1 8 1.354032 x 1 〇-2 g/m 2 /day. In another embodiment, the present invention provides a method for depositing a material layer onto a substrate comprising: placing the substrate in a process chamber to produce a slurry within the process; from a precursor of the material layer In the composition of the mixture and at a substrate of about 1 00 ° C or below + I k π A ^ 之 under the seventh degree of 'deposition of the material layer onto the substrate, and when deposited, the technology is transferred by transferring a hydrogen gas The process chamber reduces the surface roughness of the layer of deposited material to a roughness measurement of about 40 A or less. In another embodiment, a method for generating a multilayer embedding layer onto a substrate disposed in a substrate processing system includes: depositing a substrate temperature of about 2 〇〇 C or less Multi-layered inorganic barrier material layer onto the substrate surface; and alternately depositing the one or more germanium-containing inorganic barrier material layer and the one or more low dielectric constant material layers. The one or more germanium-containing inorganic barrier material layers improve the water-blocking effectiveness of the buried layer by transferring a first precursor mixture and a hydrogen gas to the substrate processing system. The one or more low dielectric constant material layers are achieved by transferring a second precursor mixture into the substrate processing system. In another embodiment, one is used to create a multilayer embedding layer to a placement A method on a substrate in a substrate processing system comprising: depositing a plurality of germanium-containing inorganic barrier layers onto the surface of the substrate by transferring a germanium-containing compound to the substrate processing system; and at about 200 ° C or below At the substrate temperature, one or more layers of low dielectric constant material are deposited between the layers of the one or more inorganic barrier materials 9 354 032 032 by transferring a carbonaceous compound and an argon gas into the substrate processing system. Thus, the multilayer embedding film layer having a plurality of layers containing a wonderful inorganic barrier layer and one or more layers of low dielectric constant can be produced on the surface of the substrate. In another embodiment, a method of depositing a low dielectric constant material layer onto a substrate at a low temperature is provided. The method includes placing the substrate in a process chamber; generating a plasma in the process chamber; 'from a carbonaceous compound and one of being fed into the process chamber at a substrate temperature of about 2001 or below A layer of low dielectric constant material is deposited onto the substrate in a mixture of hydrogen compositions. Therefore, the film uniformity of the layer of the low dielectric constant material deposited can be improved to about + / - 10% or less. In another embodiment, a method of depositing an embedding layer having one or more layers of a germanium-containing inorganic barrier material and a layer of low dielectric constant material onto a substrate is provided. The method includes transferring a first precursor mixture into the substrate processing system and transferring a hydrogen gas to the substrate processing system for a germanium-containing inorganic barrier layer; and controlling the substrate temperature to about i 5 〇乞 or less, And generating a battery to deposit the germanium-containing inorganic barrier layer onto the surface of the substrate. The method further includes transferring a second precursor mixture for depositing a layer of low dielectric constant material into the substrate processing system and transferring hydrogen into the substrate processing system; and controlling the substrate temperature to about 15 〇t or A plasma is then generated to deposit the low dielectric constant material layer to the surface of the germanium containing inorganic barrier layer. The method further includes depositing the embedding layer onto the substrate by repeating the above steps until the embedding layer has a thickness of about 15, 〇〇〇 or more. In another embodiment of the invention, an apparatus for depositing a layer of low temperature material onto a substrate is also provided. The apparatus includes a substrate support seat, wherein the base 10 is supported in a process chamber to support a substrate coupled to the process chamber for the process supply source to be lightly coupled to the process chamber. 'eg, a large area substrate; An electrical source is provided in an RF source compartment; a helium-containing compound-hydrogen supply source is coupled to the process chamber; a carbon-containing compound supply source is coupled to the process chamber; and a controller is coupled to the The process substrate temperature is about 200. 〇 or in the chamber to control the underlying substrate during processing and to deposit an embedding layer having a layer of - or a plurality of low dielectric constant layers of one or more germanium containing inorganic barriers Between the barrier layers [Embodiment] The present invention generally relates to a method for improving the water barrier and thermal stability performance between a substrate and a film/layer deposited on the substrate. The present invention discloses how to use -chlorogen to reduce the rough surface of the film layer to obtain a flat (7) film surface. Thus, a highly uniform film layer deposited on the surface of a substrate can be obtained. The smooth surface of the deposited film layer prevents water and oxygen from penetrating into the human film layer from the atmosphere and exhibits a relatively low water vap〇r transmission rate (WVTR) value. WVTR is a key factor in the flat panel display (FPD) industry that represents the effectiveness of water barriers. In addition, the present invention provides a method and apparatus for depositing an embedding/barrier layer to a substrate surface (eg, a display device) to substantially promote/extend the life of the device. The method of the 1354032 method of depositing a low dielectric constant material layer to a large area of the substrate surface at a low temperature (for example, about 2 〇〇〇c or 'below). The low dielectric constant material layer may be a non-B-day carbon material, a vermiculite carbon material, a carbon-doped germanium-containing material, or the like. The low-medium-deep layer and/or amorphous carbon material can be used as a part of the "embedded layer" to improve the uniformity of the film layer, the adhesion of the film layer, and the embedding layer && + U Poor thermal stability. Therefore, one or more layers of low dielectric or electric carbon material can be deposited on the surface of the substrate as a viscous strengthening layer or a thermal stress relaxation layer. Water-blocking performance of display elements such as OLED elements and the like. The present invention further provides a single-layer or multi-layered embedding layer that can be used to prevent water and helium and oxygen rolling from diffusing to the surface of the substrate. The layer may be a germanium-containing inorganic barrier material such as gas cut, oxygen cut, oxygen cut, carbonization = etc. The multilayered buried layer may comprise - or multiple barrier layers and - or multilayer low dielectric constant materials The one or more layers of low dielectric constant * number of Koko layers are used to improve the adhesion and thermal stability of the embedding layer and/or the one or more barrier layers. In an embodiment, the Or a multilayer of low dielectric constant material layers deposited between layers (four) "for example - at least - low dielectric The plurality of material layers and the at least one barrier layer are interleaved on the surface of the substrate, such as a surface of a display element. In another embodiment, prior to depositing a first low dielectric constant material layer, prior to the substrate Depositing a surface-first barrier to provide good water barrier effectiveness. In another embodiment, a plurality of buried layers are deposited on a substrate surface such that a germanium-containing inorganic barrier material can be deposited The last layer provides good water barrier performance for the multilayered embedding layer. The substrate used in the present invention can be a circular or polygonal shape that can be fabricated by semiconductor wafer fabrication and planar panel 12 Γ 354032 display. Flat panel displays are available The surface area of a rectangular substrate is generally large, for example, about 500 square millimeters or more, such as at least about 300 millimeters by about 400 millimeters, that is, about 1 square millimeter square millimeter or more. Further, the present invention can be applied to Any component, such as OLED, FOLED, PLED, organic TFT, active matrix column, passive matrix column, top emitting element, bottom emitting element, solar cell, etc. It can be any of the following 'including wafers, glass substrates, metal substrates, plastic film layers (for example, polyethylene to stearate (PET), polyethylene naphthalate (pEN), etc.), plastic epoxy Resin film layer, etc., Fig. 3 shows an example of a buried layer 305 deposited on a substrate 301 of a display by the method of the present invention. For example, a transparent anode layer 3〇2 (which may be A glass or plastic, such as PET or PEN, is deposited on the substrate 3.1. One example of the transparent anode layer 302 is an indium tin oxide (ITO) having a thickness of between about 2 A and about 2000 A. A broad organic or polymeric material 303 can be deposited on top of the transparent anode layer 302. For example, a material layer 3〇3 can include a transport hole layer deposited on top of the anode layer . Examples of the transport hole layer include: diamines such as a conjugated amine (NpB) derivative having a naphthyl substituent, or N, N, _diphenyl-N, N'-bis (3-A) Phenyl)·(,,][,-biphenyl)_4,4,-diamine (TpD), having a thickness of from about 200 A to about 1000 A. After the deposition of the transport hole layer is completed, an emission layer can be successively deposited. The material which can be used as the emissive layer is typically a metal chelate fluorescent compound, and one of the examples is 8-hydroxyquinoline aluminum (Alq3). The thickness of the emissive layer is generally between 200A and 1,500 people. After depositing the emissive layer, 13 of these organic layers can be deposited on the surface of the substrate after the U-LED display is typically patterned by inkjet printing or 303. Organic material - a cathode layer. The top two: two cases, the electrode layer 3 〇 4, such as a mixture # can be a metal, a metal ruthenium or a metal potential. ^, the top electrode material One example is a kind of magnesium, silver and aluminum that is recognized by people in the 3, _ human space. 'Cheng. Gold' thickness is generally in l, _A to the construction of the display component 3 〇〇 (for example After a unit/component, an embedding layer 3〇5 can be deposited on the surface of the substrate. Examples of materials suitable for use as the embedding layer of the present invention include a thin layer of inorganic nitride [inorganic oxide layer” and polymerization. The organic layer of the substance type has a thickness of between about 500 A and 50 M00 A, for example, between about 5 and 5 Å. For example, a Si, SiO, SiC, or the like can be used as the embedding material. An example provides an embedding layer 3〇5 deposited on a substrate 301. Embedding materials, such as inorganic nitride layers, inorganic oxide layers & polymer type organic materials. In addition, the present invention further provides for the use of or a plurality of additional material layers (eg, various carbonaceous materials and polymer types of organic materials' and Low dielectric constant material 'also known as amorphous carbon, diamond-like carbon, smear-containing cerium-containing material, etc.) in the embedding layer 3〇5 to improve adhesion and soften the embedding layer 305 » substrate treatment The present invention is described below with reference to a plasma enhanced chemical vapor deposition system for processing large area substrates including, for example, various flat 14 Γ 354032 rows of panels - radio wave (RF) plasma enhanced chemical vapor phase. The deposition (pECVD) system includes AKT 1600, AKT 3500, AKT 4300, AKT 5500, AKT 10K, ΛΚΤ 15K and AKT 25K^ for use in various sizes of substrates (a division of American Applied Materials). The invention also has utility in other systems, such as other types of chemical vapor deposition systems and other film deposition systems, including those used to process circular substrates. The present invention provides a substrate processing system having one or more processing layers or multilayers embedded on a substrate surface. The etching layer of the present invention can be processed on the same or different substrates. Deposited in the system or deposited in the same or different processing chambers of the same substrate processing system. In one embodiment, the multilayered buried layer is deposited in the same vacuum substrate processing system to save time and improve production. In another embodiment, the multilayer buried layer can be deposited into a substrate surface in the same or different processing chambers in a multi-chamber-substrate processing system. For example, the one or more germanium layers The multi-layered embedding layer of the inorganic barrier layer and or the multi-low dielectric constant material layer can be effectively deposited in a chemical vapor deposition without removing the substrate from the CVD system and reducing the diffusion of water or oxygen to the surface of the substrate. Deposited in the system. Fig. 4 is a schematic view showing the surface of a substrate processing system 4 (available from American Applied Materials, Inc., 一τ) having one or more electric-enhanced chemical vapor deposition processing chambers. The system 400 generally includes one or more processing chambers 402, a plurality of substrate input/rounding chambers, a primary transfer robot for transferring substrates between the substrate wheeling/rounding chambers and the processing chamber 402, and a host The controller is used to automate the substrate processing control. The processing chamber 402 is typically coupled to one or more gas supply sources 4〇4 for transporting one or more source compounds and/or precursors. The one or more gas supply sources 404 can include a ruthenium containing compound supply source, a hydrogen supply source, a carbonaceous compound supply source, and the like. The processing chamber 4〇2 has a plurality of walls 4〇6 and a bottom 408' for partially defining a processing space 412. The processing space 412 is typically accessed by a port or a valve (not shown) to assist in moving a substrate 44, such as a large area of glass substrate, into and out of the processing chamber 4〇2. The plurality of walls 406 can support a cover assembly 4 10 0 '. The cover assembly 4 含有 includes a suction plenum 4 丨 4 to couple the processing space 412 to an exhaust vent (which includes various suction components, Not shown) to discharge any of the gases and process by-products out of the process chamber 4〇2. A temperature controlled substrate support assembly 438 is placed in the center of the processing chamber 402. The support assembly 438 can support the glass substrate 44〇 during processing. In one embodiment, the substrate support assembly 438 includes an aluminum body 424 that houses at least one heater 432 embedded therein. The heater 43 2 (eg, resistive element) located in the support assembly 43 8 is coupled to a selectively used power source 474 to control heating of the support assembly 43 8 and the substrate 440 located on the assembly. A preset temperature. In one embodiment, the temperature of the heater 432 can be set at about 200 ° C or below, such as about 150 ° C or below, or between about 20 t to about 10 ° C, depending on the deposited one. Depending on the deposition/processing parameters of the material layer. For example, for a low temperature process, the heater can be set at about 60. (: to a temperature of about 8 ° C, for example about 70 ° C. 16 Γ 354032 In another embodiment, a crucible having hot water flowing through it is disposed in the substrate support assembly 438 to maintain the temperature of the substrate 440 At a uniform temperature of 2 Torr or less, for example from about 201 to about 1 Torr. (:. or, during processing, the heater 432 can also be turned off 'only leaving flow through the substrate support The hot water in assembly 438 controls the temperature of the substrate to achieve a substrate temperature of about 100 ° C or less. The substrate support assembly 438 is typically grounded such that it is supplied to a gas distribution plate assembly 418. RF power (between the cover assembly 410 and the substrate support assembly 438) (which is powered by a power source 422) can excite the processing space 412 (between the substrate support assembly 438 and the gas distribution plate assembly 418) In general, the RF power from the power source 422 can conform to the substrate size to drive the chemical vapor deposition process. In one embodiment, 'about 10 watts or more than 10 watts of RF power, For example, between about 400 watts to about 5 〇〇 A ' ' ' is applied to this to generate an electric field in the processing space 4 1 2 . For example, a power density of about 〇 2 watts / square centimeter or more can be used, for example, about 〇 2 watt / Square centimeters to 0.8 watts per square centimeter, or about 0-45 watts per square centimeter' is compatible with a low temperature substrate deposition method of the present invention. The power supply 422 and matching network (not shown) can create and maintain a process The plasma produced by the gas, the process gas system is from the precursor gas in the processing space 422. Preferably, the high frequency RF power of 13.56 MHz is used, but this is not critical, and lower frequency power can also be used. In addition, the multi-wall can be protected by a ceramic material or an anodized aluminum material covering the multi-wall of the processing chamber. Generally, the substrate support assembly 438 has a bottom surface 426 and an upper surface 17 4354032 surface 43. The bottom surface 426 can have a post 442 coupled to the surface. The post 442 can couple the support assembly 438 to a lift system (not shown). Moving the support assembly 438 to one A high processing position (as shown) and a lower position. The post 442 additionally provides an electrical and thermocoupled conduit between the support assembly 438 and other components of the system 4. The folded tube 446 is coupled to the substrate branch assembly 438' to provide a vacuum sealing effect between the processing space 41 2 and the air pressure outside the processing chamber 402 while assisting the vertical movement of the support assembly 438. In an embodiment, the lift system is adjustable such that the space between the substrate and the gas distribution plate assembly 4丨8 during processing is about 4 mils or more, such as between about 400 mils. To about 1600 mils, that is, about 9 mils. The ability to adjust the space allows the process to be optimized under a variety of process conditions while maintaining the desired thickness of the deposited film on a large area of substrate. A combination of a grounded substrate support assembly, a ceramic liner, a high pressure and a compact space can create a highly concentrated plasma between the gas distribution plate assembly 418 and the substrate support assembly 438 to increase the concentration of the reaction species and the treatment The thickness of the deposited layer of the film. The substrate support assembly 438 can also support a restricted shadow frame 448». The shadow frame 448 prevents the substrate 44 edge and the support assembly 438 from depositing so that the substrate does not stick to the support assembly 438. The lid assembly 41 typically includes an inlet port 480 from which a gas system supplied by a gas source 404 is introduced into the processing chamber 402. The inlet port 480 is also coupled to a source of cleaning gas 482. The cleaning gas source 482 typically provides a cleaning agent, 18 1354032, such as dissociated fluorine, which is introduced into the processing chamber 402 to remove deposited byproducts and processing chamber hardware (including the gas distribution plate assembly 418). Deposit the film layer. The gas distribution plate assembly 418 is typically designed to substantially follow the contour of the substrate 440, such as a polygon of a large area substrate or a circular shape of the wafer, to flow a gas. The gas distribution plate assembly 418 includes a bore-like surface 416 through which process gases and other gases supplied by a gas source 404 can be passed to the processing space 4 1 2 β. The gas-distributing plate assembly 4 1 8 has a perforated surface 4 The 16 Series is designed to provide uniform gas dispersion through the gas distribution plate assembly 4 1 8 into the processing chamber 402. The gas distribution plate assembly 418 typically includes a diffuser plate 458 that depends from a suspension plate 460. A plurality of gas passages 462 are formed through the diffuser plate 458 to allow a predetermined amount of gas to be dispersed through the gas distribution plate assembly 4 1 8 and into the processing space 4 1 2 . A gas dispersing plate suitable for use in the present invention is disclosed in U.S. Patent Application Serial No. 9/922,219, issued toKall et al. 1〇/14〇, No. 324; US Patent Application No. 1/337,483, which was filed on January 7曰81〇111§&11 et al.; 2〇〇2年Π月12日U.S. Patent No. 6,477,980 to White et al., and U.S. Patent Application Serial No. 1/471, the entire disclosure of which is incorporated herein by reference. Although the invention has been disclosed by way of specific embodiments, the invention is not limited to such embodiments, the CVD process described herein may be by other CVD processing chambers, adjusting gas flow rate waste, The electrical density, and temperature, are implemented to achieve a high quality deposited film layer at the actual deposition rate. 19 1354032 Deposition of an Embedding Layer FIG. 5 illustrates a display 500 prepared in accordance with an embodiment of the present invention. The display 500 can include a substrate 5〇1 and an element 5〇2, which can be any type of display to be embedded. For example, the element 5〇2 can be an OLED, an FOLED, a PLED, an organic TFT, a solar cell, a top emitting element, a bottom emitting element, and the like. Thereafter, an embedding layer having a thickness of about 1,000 A or more is deposited by the method of the present invention to prevent water/moisture and air from penetrating into the substrate 501 and the element 052. In an embodiment t, one has at least A barrier layer of at least one layer of at least one layer of low dielectric constant material is deposited on top of the element 502 to prevent moisture and other gases or liquids from diffusing into the element 502 and shorting the element 502' The multilayered embedding film layer is not broken or peeled off from the surface of the element 502 due to poor adhesion or poor thermal stability. As shown in Fig. 5, the multilayer embedding film layer comprises one or more layers of alternating stacked barrier layers 51, 512, 513, etc., and low dielectric constant material layers 521, 522 and the like. In one aspect, the invention provides one or more layers of low dielectric constant material 521, 522 deposited between the one or more barrier layers 511, 512 and 513. In another aspect, the last layer of the multilayered embedding film layer deposited on top of a substrate surface by the method of the present invention is a barrier layer, such as the barrier layer 5 1 3 Barrier materials, such as nitriding dreams, bismuth oxynitride, cerium oxide, tantalum carbide, and the like, serve as good moisture and oxygen barrier layers for the final surface of the display. The first layer on top of element 502 can be a low dielectric constant material layer or a 20 Γ 354032 barrier layer. In a preferred embodiment, the present invention provides a first layer deposited on top of the element 502 as a barrier layer to enhance the moisture barrier effectiveness of the illustrated display 500. For example, a first barrier layer, such as the barrier layer 51, can be deposited prior to an adhesion promoting layer and/or a low dielectric constant material layer (e.g., the low dielectric constant material layer 521). Therefore, the low dielectric constant material layer is deposited on top of the barrier layer to promote adhesion between adjacent barrier layers such that the multilayered buried film layer is deposited to a sufficient thickness, for example, about 8,000. A or more thickness. Figure 6 is a flow chart showing a deposition method according to an embodiment of the present invention. First, a substrate is placed on a substrate for depositing a material layer (e.g., a coating layer 305) on a substrate. Processing in a processing room of the system. The method 600 can optionally include the step of forming an element on the substrate. Exemplary components include, but are not limited to, OLEDs, pleds, FOLEDs, and the like. In step 602, a first precursor mixture used to deposit a barrier layer (e.g., a germanium-containing barrier layer) is transferred into the substrate processing system. The first precursor mixture may include one or more hydrazine-containing gases such as decane (S1H4), S1F4, and SqH6, and the like. The first precursor mixture may further comprise one or more nitrogen-containing gases, such as NH3 'N20, NO and N2, and the like. The first precursor mixture may further comprise one or more carbon containing gases and/or oxygen containing gases. For example, a tantalum nitride barrier layer can be deposited from a mixture of a helium-containing gas and a nitrogen-containing gas (e.g., a mixture of decane, ammonia, and/or nitrogen). In another example, a helium-containing gas, a mixture of an oxygen-containing gas and a nitrogen-containing gas may be freely available (for example, a mixture of Shixiyuan, nitrous oxide (n2〇) 21 1354032 and/or nitrogen). A barium oxynitride barrier layer is deposited. In step 604, a hydrogen gas is delivered to the substrate processing system and in step 606, a germanium-containing inorganic barrier layer is deposited on the substrate surface at a substrate temperature of about 20 (rc or less. For example, during the substrate processing of an OLed element 300), due to the thermal instability of the organic layer in the 〇LED element (for example, 'multilayer organic material 3〇3), the substrate temperature must be kept at a low temperature. Said that the preferred temperature is at 15 (rc or below, for example about 10 ° C or below, about 8 〇. (: or below, or between about 20 ° C to about 80 t. Hydrogen is known Reducing the roughness of the surface of the deposited germanium-containing inorganic barrier layer is such that a surface roughness measurement (RMS) of from about 40 A to about 70 A can be reduced to about 40 A or less, such as about 15 A or less. Preferably, it is about 1 inch or less. It has been found that a barrier layer having a lower surface roughness (i.e., a 'smooth surface') can significantly prevent moisture from penetrating into the barrier layer - making it any material underneath ( That is, for organic and/or polymerization in display elements Good embedding layer of material. The introduction of hydrogen prevents moisture penetration, and its water vapor transmission rate is less than about 1 X 丨〇 -2 g / m ^ 2 / day, for example, between about 1 X 1 〇 _ 3 grams / m ^ 2 / day to about 1 X 1 〇 -4 g / m ^ 2 / day between 'this is measured at 3 8 ° C, 90% relative humidity. In step 608 'will be used for deposition A second precursor mixture of a layer of low dielectric constant material is transferred to the same or a different substrate processing system. Preferably, the low dielectric constant material layer is the same substrate processing system used to deposit the barrier layer _Processing' to increase the yield of the substrate processing. In addition, for ease of operation and to reduce the probability that the substrate must be exposed to air and moisture when removed or placed in a substrate processing system, 1354032, the cost is to deposit a barrier layer and/or a layer of low dielectric constant material, the substrate may be placed in the same or different processing chambers of one of the substrate processing systems. Or a multi-carbon compound, such as B. The second precursor mixture may include a Or more containing alkyne, ethane, ethylene, methane, propylene, Propyne, butadiene, stupid, and toluene, and the like.

Phosphorus material. In step 610, hydrogen is transferred into the substrate processing system and a layer of low dielectric constant material is deposited on the surface of the substrate at a substrate temperature of about 200 ° C or below (step 612). The substrate temperature is preferably about 15 〇〇 c or less, for example about 10 ° C or less, about 8 Torr. (: or below, or between about 2 〇 < t to about 8 〇r. It is known that hydrogen can improve the film uniformity of the deposited low dielectric constant material layer' such that the film uniformity measurement is from about +/_15% to about +/ 35〇/〇' is improved to about +/_ 1 〇〇 /. or lower 'eg about or lower, or about +/- 3% or lower. I also found A layer of low dielectric constant material having improved film uniformity can significantly improve the coverage of the deposited layer of low dielectric constant material such that additional layers can be deposited with good coverage. For example, The multilayer embedding layer has a coverage of about 8% or more, for example about 95% or higher. 23 1354032 In step 614, if a predetermined thickness is obtained, the germanium-containing inorganic barrier layer and the low dielectric are obtained. The embedding layer of the constant material layer may end the process in step 616. If an embedding layer of a predetermined thickness is not obtained, the above steps 6 02, 604, 606, 608' 610, 612 may be repeated. a combination, for example, once one or more layers of a germanium-containing inorganic barrier layer and one or more layers of low dielectric constant material are deposited After the layer is formed and the thickness of the film layer is desired, the method is terminated, wherein the finally deposited film layer is a germanium-containing inorganic barrier layer or a low dielectric constant material layer. The thickness of the buried layer can be The variation β is, for example, 'about 1, 〇〇〇A or greater' such as about 10, 〇〇〇A or greater, such as between about 2 〇, 〇〇〇a to about 60,000 A. We find element 502 The thickness of the embedding layer is related to the air and moisture barrier effectiveness, thereby extending the life of the element 5 〇 2. Using the method of the invention 'the life of the element 502 can be about 4 days or more, for example about 45. Days or longer' or about 60 days or longer.

In one aspect, a single layer barrier layer deposited by the method of the present invention can be used as an embedding layer for a display element. For example, a single-layer tantalum nitride barrier layer having a thickness of about 1 Å can be used as an embedding layer. In another aspect, the invention provides a multilayered embedding layer comprising at least one germanium-containing inorganic barrier layer and at least one low dielectric constant material layer. The germanium-containing inorganic barrier layer has a thickness of between about 1,000 and about 10,000, such as between about 2,000 and about 8 A. The thickness of the low dielectric constant material layer is between about 1 〇〇〇. A to about 1 in between. It is known that a low dielectric constant material layer can improve the viscosity between adjacent barrier layers to make it have good thermal stability, and also to make the germanium-containing inorganic barrier layer of a plurality of layers 13 1354032 to obtain a certain thickness become feasible. An 7F inventive embedding layer may comprise two layers of tantalum nitride and an amorphous carbon material layer interposed between the layers of nitriding, the total thickness being between about 3 and 〇〇〇A to about 30,0〇〇. Another exemplified embedding layer of the present invention may comprise five layers of tantalum nitride and four layers of amorphous carbon material interposed between the five layers of tantalum nitride, the total thickness being between about 9,000 A and about 90, 〇 〇〇A room. Plasma can be used to clean the surface of the substrate before or after deposition of each layer. For example, one or more cleaning gases may be supplied to the processing chamber and an electric field generated by RF or microwave power may be applied to produce a cleaning plasma. The cleaning gases may include, but are not limited to, oxygen-containing gases (eg, oxygen, carbon dioxide), hydrogen-containing gases (eg, hydrogen), nitrogen-containing gases (eg, ammonia, nitric oxide), inert gases (eg, Helium, argon, etc. Examples of the hydrogen-containing gas may include, but are not limited to, hydrogen, ammonia, and the like. Further, when the processing chamber is cleaned with an electric swarf formed by a cleaning gas, the cleaning gas is selectively delivered to the processing chamber together with a carrier gas. Examples of the carrier gas include inert gases such as II gas, argon gas, and the like. For example, an oxygen plasma can be generated in situ to remove any residual material remaining in the processing chamber after processing in another substrate and after removal of the substrate, such as residual in the process chamber wall, gas distribution panel, or any Residual material at the place. It should be noted that the embodiments of the present invention do not limit the order of implementation of the steps. For example, 'a hydrogen gas can be sent to the processing chamber before transferring a mixture of precursors to the processing chamber, and in some cases, steps 6 02 and 604 ° can be performed simultaneously, or both. Steps 608 and 610 are performed. 25 depositing at least one barrier layer containing germanium

One or more inorganic barrier layers are formed from the precursor group A from being transferred into the processing chamber.哼 _ ' ' ° > 儿 ,, yl W W 别 别 别 别 别 别 别 别 别 别 别 别 别 别 别 别 别 别 别 别 别 别 别 别 别 , , , , , , , , , , , , , , , , , , , , , A ruthenium layer or a ruthenium oxide layer, a ruthenium osmium layer or the like is used as an embedding layer on the substrate. The chopped precursor may be delivered, for example, at a flow rate of i 〇 s (10) or higher, for example, for a substrate of about 400 mm 乂 about 5 mm, which may be between about H) Secm and about sccm. The flow rate is transmitted. - said precursor can be delivered at a flow rate of about 5 seem or higher, such as a flow rate between about ι〇〇 seem and about 6 〇〇〇 sccm. For example, a mixture of precursors for depositing a layer of lanthanum oxynitride may include decane, nitrous oxide, nitrogen, and the like. Alternatively, a layer of tantalum nitride may be deposited by decane, ammonia, nitrogen or the like. In addition, the precursors may include decane and nitrous oxide to deposit a layer of ruthenium oxide. In addition, each precursor can be delivered at the same or a different rate, depending on the deposition parameters desired. It should be noted that embodiments of the present invention cover that process parameters/variables may be enlarged or reduced according to a substrate area, processing conditions, etc., and when the one or more inorganic barrier layers are deposited, a hydrogen gas is delivered to the processing chamber to improve the present invention. Inventing the embedding layer to block the penetration of water. In addition, 'it is known that the introduction of hydrogen can reduce the one or more ruthenium-containing inorganic I1 and the surface roughness of the barrier layer makes it more suitable as an embedding layer." The one or more ruthenium-containing inorganic barrier layer is applied by applying an electric field. A plasma is generated in the processing chamber to be deposited on the surface of the substrate. The electric field is generated by applying 26 1354032 power (e.g., radio frequency power, microwave frequency power) to the processing chamber. The power can be coupled to the processing chamber inductively or capacitively. In addition, the pressure in the processing chamber is maintained between about 5 Torr and about ... between the ears. As a result, the one or more inorganic barrier layer is deposited at a rate of about 500 A/min or more, for example, at a rate of from about 100 A/min to about 3000 A/min. The thickness of the one or more germanium-containing inorganic barrier layers can vary from about 1000 Å to about 30,000 Å. Generally speaking, for the effect of preventing moisture penetration, a thick barrier layer is better than a thin barrier layer. The deposition process of a conventional low temperature inorganic film layer has an undesired property on the embedding layer. For example, the film layer will become less dense and have surface defects and defects. At the same time, the film properties are not good. For example, the refractive index changes after the moisture test. The two 'transit Fourier transform infrared spectroscopy (FTIR) changes are high. After the moisture test, the water vapor transmission rate (WVTR) is high. The tantalum nitride film which has good water barrier performance as a good moisture barrier/film layer will be described in detail below, but the present invention is not limited to the details of the following disclosure. The substrate will be located in a conventional parallel plate-radiowave plasma enhanced chemical vapor deposition system (PECVD) (eg, AKT 1600 PECVD system of the American Applied Materials Corporation, which has a pitch of about 900 mils) (4〇〇mm x 00mm) 'Bringed to vacuum. The temperature at which the substrate is supported is set at about 6 〇 C to perform a low temperature deposition process. A mixture of decane 'ammonia and nitrogen gas is transported together into the processing chamber in the presence of hydrogen as a precursor gas for depositing a tantalum nitride film that blocks moisture and oxygen. For the sake of comparison, the same method was used to simultaneously perform the method of using decane, ammonia and nitrogen to sink the yttrium nitride film. The pressure in the processing chamber is approximately z · 1 Torr. The generation of plasma is maintained with RF power set at 13.56 MHz and 900 watts. nature. The results show that there is a similar basic property, and the film stress is about the initial refractive index of the tantalum nitride film deposited in the presence of substantially no hydrogen compared to the film produced by the two methods. 2xl〇9 dyne/cm2 between 1.7 and 1.9. The deposition rate of the two layers is also almost between about 1000 A/min and about 1500 person/min. Therefore, the presence or absence of hydrogen does not affect the basic properties of the film layer or its deposition rate. However, the surface roughness of the two layers after deposition (the unit is square root, HMS (root mean square)) is greatly different. The two layers were compared under a microscope and the 3-dimensional surface roughness was measured. The average surface roughness of the tantalum nitride film deposited without hydrogen is about 4 to 7 inches, indicating that the surface is rather rough. Conversely, the average surface roughness of the tantalum nitride layer deposited under hydrogen is between about 9A and 12 people, indicating a fairly smooth surface. After the moisture test, the difference in properties of the two membrane layers to block water/moisture is quite obvious. According to the comparison of the key water barrier effectiveness of Table 1, it can be seen that the hydrogen source plays a very important role in reducing the thick chain surface of the film to make it a smooth surface, and a smooth surface can prevent water/oxygen in the atmosphere. Penetration into the interior of the membrane results in a lower WVTR (water vapor transmission rate) value, a key value used in the flat panel display industry to indicate moisture/moisture resistance. The moisture test used to measure the WVTR is a high humidity test, usually by placing the test substrate in a humidity chamber at a temperature of about 25 ° C to about 100 t and a relative humidity (RH) between 40% and 100%. The specified time (usually hours or days, etc.) 28 Γ 354032 for testing. The amount of water remaining on the test structure of that particular size per unit of test time is calculated to represent a water vapor transmission rate (WVTR) at the temperature and relative humidity of the test. Table 1 Comparison of key moisture barrier efficiencies: The surface roughness of the tantalum nitride film without H2 after H2 nitride film deposition is about 40 to about 70 into about 9 to about 12 in (RMS) water treatment (100 °C/100 small 15% 0%) Refractive index (RI) change FTIR change after water treatment (100 °C / 100 small 0-H bond increase does not change) Si-H bond decreases NH bond reduction 38 °C, 90% relative humidity, more than l.Ox 10_2 g / m ^ 2 / day about l.Ox ΚΓ 4 g / m ^ 2 / day of water vapor transmission rate to (WVTR) about l.Ox ΗΓ 3 g / square Metric/day also compares the penetrating Fourier transform infrared spectroscopy (FTIR) changes of the tantalum nitride layer deposited with hydrogen before and after moisture testing. The effect of moisture treatment on FTIR and refractive index (RI) changes is also compared by immersing the film in hot water such as 100 °C for a period of time, for example about 1 hour. Record the FITR spectrum between 1500 cnT1 and 4 000 cnT1, and mark the positions of Si-H, N-H, and 0-H bonds in the spectrum. The spectrum did not differ much before and after the water treatment, indicating that there was no bond in the tantalum nitride film deposited simultaneously with hydrogen due to the change in moisture. The results in Table 1 show that the tantalum nitride is about 1 〇〇 at about 1 〇〇 of its water application s (hot and humid), the batch of tantalum nitride film deposited in the presence of hydrogen, the rate of investigation There is no significant change. These results, combined with the lower water vapor transmission rate (WVTR) results after moisture testing, show that the high quality tantalum nitride film deposited with hydrogen as the precursor gas has good moisture barrier properties. For comparison, the permeability of the ytterbium nitride layer deposited by the prior art without the addition of hydrogen as a precursor gas was observed before and after the moisture test. The results showed that the number of 1 Η bonds in the film layer was greatly reduced, the number of Ν·Η bonds was slightly reduced, and the number of 〇_h bonds was slightly increased. - As shown in Table 1, the deposited tantalum nitride film exhibits a refractive index change of about 15% in the absence of gas as a source of precursor gas. In addition, a higher water vapor transmission rate can be measured after the moisture test. All of these results show that the tantalum nitride film formed by the hydrogen-free rolling process has poor moisture barrier properties. Depositing at least one layer of a low dielectric constant material. This aspect of the invention provides an alternate sinking. A tube/integrated low dielectric constant material layer and a germanium containing inorganic barrier layer. An dielectric constant is about false. An exemplary low dielectric constant material layer of less than 4 is an amorphous carbon material. Other examples of low dielectric constant materials include carbon-containing low dielectric constant materials, carbon doped cerium materials, iron-like carbon materials, and the like. Figure 7 is a flow chart showing the deposition method 7 of a method according to the present invention. 1313054032. In step 702, a substrate is placed in a deposition chamber to deposit a low dielectric constant material. For example, an amorphous carbon material layer is on the substrate. In step 704, a mixture of precursors for depositing the amorphous carbon material is transferred to the processing chamber. There are many types of gas mixtures that can be used to deposit the low dielectric constant materials. Non-exhaustive examples of such gas mixtures are listed below. Generally, the gas mixture can include one or more carbon containing compounds and/or hydrocarbons. Suitable organic carbon-containing compounds include fatty organic compounds, cyclic organic compounds, or combinations thereof. The fatty organic compound may be a linear or branched structure containing one or more carbon atoms. Organic broken compounds contain carbon atoms in their organic base. The organic group includes, in addition to its functional derivative, an alkyl group, a dilute hydrocarbon group, a fast hydrocarbon group, a cyclohexyl group, and an aromatic group. For substrates of about 400 mm χ 500 mm, the carbon-containing precursor/compound can be delivered at a rate of, for example, 10 seem or more, such as between about 1 〇〇 sccm and about 50,000 s c c m . For example, the carbon-containing compound has the formula CxHy, wherein x ranges from i to 8 and y ranges from 2 to 18 'includes, but is not limited to, ethyl bromide, ethylene bromide, ethylene, propylene, propyne , propane, methane, butane, butadiene dibutyl, benzene, toluene and combinations thereof. Alternatively, a partially or fully fluorinated carbonaceous compound derivative > e.g., C; 3F8 or C^Fs' may be deposited to deposit a fluorinated amorphous carbon layer which may be described as an amorphous carbon fluoride layer. The amorphous carbon layer or the amorphous fluorinated carbon layer may be deposited by a combination of a hydrocarbon and a fluorinated derivative thereof. A wide variety of gases can be added to the gas mixture to improve the properties of the amorphous carbon material layer. An inert gas (eg, gas, argon, gas, atmosphere, 31 1354032 氙, etc.), IL gas, ammonia, nitrous oxide, nitrogen monoxide or a combination thereof, etc., at an arrest rate of about 5 SCCm or higher Transferring, for example, a rate between about 丨〇〇sccm and about 6 〇〇〇seem' to control the deposition rate and density of the low dielectric constant amorphous carbon layer. Further, hydrogen and/or ammonia may be added to control the amorphous carbon layer. The hydrogen content ratio controls the properties of the ruthenium layer (eg, refractive index). In step 706, hydrogen is delivered to the process chamber to increase the uniformity of the film. When hydrogen is added as the source gas, a film uniformity of about +/- 1 G% or less can be obtained, for example, about +/_. 5% or lower, or about +/_ or lower. In the case of adding hydroquinone, the deposited layer of low dielectric constant amorphous carbon material is quite ambiguous, and the film uniformity is between about +/_ 15% to +/_ 35%. In the absence of the use of Qiyou Α wind milk to improve the film uniformity, it has a greater impact on the coverage of each deposition step. A layer of a low dielectric constant amorphous carbon material having a preferred film layer can significantly improve the coverage of each deposition step by about 80% or more, or even up to about 95% or more. The inorganic barrier layer of the stacked structure t adheres better. In step 708, 'the electric field is applied to the processing chamber and a plasma is generated. The electric field can also be transferred to the processing chamber by means of a thunder, 丨丨, 来, 'to generate', for example, radio wave power, microwave frequency power, in an inductive or capacitive manner. The -3.55 MHz RF power can be applied to the process to form an electrical aggregate with a power density between about square a and about 8.6 watts per square centimeter or between about i watts to g Gui'. It is preferred to supply - between about 25 watts / watt, the power density between 6 watts / square centimeter to the processing chamber to form 32 Γ 354,032 into a plasma. The RF power can be provided between about 0.1 MHz and about 300 MHz. RF power can be supplied in a continuous or pulsed manner. The rf power is coupled to the chamber to increase the dissociation rate of the compound, and the compound can also be first dissociated by microwave power before the compound enters the deposition chamber. However, individual parameters can be varied to perform a plasma process on the same process chamber and on different sized substrates. The carbon-containing compound and hydrogen are introduced into the processing chamber from a carbon-containing compound supply source and a gas supply source by a gas distribution system. The bulk distribution system is generally placed at a distance of from about 180 mils to about 2000 mils from the substrate onto which the low dielectric normally amorphous carbon layer will be deposited, such as about 900 mils. In addition, the process chamber pressure is maintained at about 1 Torr to about 20 ears. In step 710, the amorphous carbon material layer is at a substrate temperature of about i or less. For example, at a substrate temperature between about -20 t and 100 ° C, preferably at a substrate temperature between about 20 ° C and 80 ° C, deposited on the substrate by applying a crystalline carbon material. . In one embodiment, a preferred amorphous layer is deposited by simultaneously supplying B to a processing chamber at a flow rate between about 1 〇〇seem and about 5,000 scm, such as a flow rate of about 200 seem. A hydrogen gas is also added at a flow rate between about 100 seem to about 2,500 seem, for example, between about 200 seem to about 600 seem. The above process parameters can provide a deposition rate typically between about 5 A/min or higher deposition rate, such as between about 1,500 A/min and about 2,50 A/min, in conventional parallel plates. Radio wave (RF) plasma enhanced chemical vapor deposition system (PECVD) (gambling from California, American Applied Materials) the same or the process s not hydrogen several cases to the temperature of the case of the e-sinking The electrochemical constant amorphous carbon layer is deposited in a chemical vapor deposition chamber. The amorphous carbon deposition value m provided herein is for use in the context of the present invention and is not intended to limit the scope of the invention. The deposited low electrical constant amorphous carbon material includes a carbon and a hydrogen atom, wherein the ratio of carbon atoms to hydrogen atoms is adjustable from about 10% hydrogen to about 6% hydrogen. The proportion of hydrogen in the amorphous carbon layer is controlled to fine tune its optical properties, etch selectivity and chemical mechanical w-micro-abrasive properties. Specifically, as the hydrogen content decreases, the optical properties of the deposited layer, such as the refractive index (η) and the absorption coefficient (k)', increase. Similarly, as the content of calcium in the crucible decreases, the residual resistance of the amorphous carbon layer increases. It is to be understood that embodiments of the invention include increasing or lowering the any-process parameter/variable in accordance with substrate processing conditions and the like. Similarly, the present invention does not necessarily require the sequential execution of the steps described above. For example, hydrofluoric can be fed into the processing chamber before the mixture of precursors is fed, and in some cases, steps 704 and 706 can be performed simultaneously. Alternatively, a nitrogen-containing gas, such as nitrogen, is sent to the gas at a flow rate of between about 200 sccm and about 5 Torr (sec). The velocity between, for example, about 1, 〇〇〇 sCCm to 2, 〇〇〇 see. Embodiment 8 shows a deposition method 800° according to an embodiment of the present invention. In step 802, a multi-antimony inorganic barrier layer is used in a substrate processing system to contain a ruthenium compound and a hydrogen gas. The treatment is carried out and deposited on the surface of a substrate. In step 804, one or more amorphous carbon layers are deposited between the one or more inorganic barrier layers 34 Γ 354032 in a same or different substrate processing system with a carbon containing compound and a hydrogen gas. Preferably, a germanium-containing inorganic barrier layer (e.g., a tantalum nitride layer) is first deposited as a good water and oxygen barrier layer beneath any of the tantalum nitride layers. Figure 9 shows the optical penetration of an exemplary barrier layer and an exemplary low dielectric constant material layer. The illustrated barrier layer is deposited in a PECVD chamber with decane (flow rate about 15 〇 seem), ammonia (flow rate about 400 seem), nitrogen (flow rate about 15 〇〇 sccm), and hydrogen (flow rate about 4,000 seem). Made of gasification stone layer. The substrate was placed in the pecvd chamber at a distance of about 900 mils and held at about 2.1 to maintain pressure. A plasma was applied from an RF power having a power density of about 45 watts/cm 2 and deposited under a substrate bias for about 39 sec. Maintaining a substrate temperature of about 70 ° C during deposition provides a rate of about 1,7 Å A/min. The exemplary low dielectric constant material layer is deposited in a PECVD process chamber with acetylene (flow rate about 2 〇〇 seem), nitrogen (flow rate about 1, 〇〇〇sccm), and hydrogen (flow rate about 5 〇〇 sccm). An amorphous carbon layer. The substrates were placed in the PECVD chamber at a distance of about 9 mils' and maintained at a pressure of about 1.5 mils. A plasma was applied from an RF power having a power density of about 0.25 watts/cm 2 to deposit under a substrate bias for about 500 seconds. Maintaining a substrate temperature of about 70 ° C during deposition provides a rate of about 1,2 Å/min. Fig. 9 shows the light transmittance of the deposited tantalum nitride layer (91 〇) and the amorphous carbon layer (920). The two films have very high light transmission at different wavelengths, averaging between about 65% and about 1 Å. between. At high wavelengths of about 5 Å nm or higher, the light transmission is even better, and the average light transmittance is between about 90% and about 1%. Results 35 The tantalum nitride layer and amorphous carbon layer of the present invention can be used in a variety of applications as top and bottom emissive display elements. Referring to Fig. 8, in step 806, ruthenium selectively deposits a layer containing the last layer of the dream-free barrier layer. Accordingly, in step 808, an embedding layer having the one or more bite-containing inorganic barrier layers and the one or more amorphous carbon layers is deposited on the surface of the substrate. Therefore, various embedding layers having one, two, three, four or five barrier layers can be deposited. Similarly, various embedding layers having a layer of _, 2, 3, 4 or 5 layers of low dielectric constant can be deposited. For example, depositing, comparing/testing the one, two, three, four or five layers of amorphous carbon material interposed between the two, three, four, five or six layers of tantalum nitride film layers Various embedding layers of the layer. In addition, the ruthenium-free barrier layer and the amorphous ruthenium layer deposited to various thicknesses in the presence or absence of hydrogen were also tested. The effect of the present invention having the embedding layer containing the barrier layer and the amorphous carbon layer was examined by a tape peeling test and a calcium test. The result is very good, showing that any of the layers of the multilayered layer is not easily peeled off from the substrate, and its water and gas rot are quite mild (in a test, there is little or no transparency) Calcium salt formation). At the same time, the embedding layer of the present invention is also tested on an element such as an OLED element, which is deposited to the desired thickness without peeling and prevents moisture from penetrating into the element to extend the life of the element. Measuring at about 60 C and about 65% of the fishery degree, the invention can extend the life of the device to more than about 1,440 hours. Figure 10 shows a multilayered 36 1354032 embedding layer exemplified by the method of the present invention. A cross-sectional electron microscope scan of a substrate 1010 shows a multilayered embedding layer 1 020 deposition. At the top of the substrate. The multi-layered embedding layer Ϊ020 includes four layers of nitriding layer ionion, ι〇12, 1〇13' 1014, and three layers of amorphous carbon material layer 102 1 '1 022 '1 〇23 interposed between the nitrogen Between the ruthenium layers, to promote the adhesion between the ruthenium layer materials, the final film thickness of the multilayer buried layer 丨〇2 达到 reaches about 35,000 A. The coverage of each of the plurality of buried layers 1020 having a plurality of layers of 9 deposited material layers can reach a coverage of about 95%. Although the present invention has been described in detail by the preferred embodiments, it will be apparent to those skilled in the art that BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing an OLED element; Fig. 2 is a schematic cross-sectional view showing a 〇LED element having an embedded layer attached to the top of the element; A schematic cross-sectional view of an OLED device having an embedding layer deposited thereon in accordance with an embodiment of the present invention is shown; FIG. 4 is a cross-sectional schematic view of a processing chamber in accordance with one embodiment of the present invention, and FIG. The present invention is a method of depositing a cross-sectional schematic circle of an example of an embedding layer; FIG. 6 is a flow chart showing a method of elevating a multi-layer embedding layer on a substrate in a substrate processing system according to an embodiment of the present invention, 37 Γ 354032 7 is a flow chart showing a method of rising into a low dielectric constant material layer on a substrate in a processing chamber according to an embodiment of the present invention; FIG. 8 is a view showing a substrate rising in a substrate processing system according to an embodiment of the present invention; A flow chart of another method of forming a multilayered embedding layer; FIG. 9 is a view showing optical properties of a barrier layer exemplified by the method of the present invention and an exemplary low dielectric constant material layer; EMBODIMENT OF THE INVENTION Example of depositing a multilayer embedding layer having four layers of a tantalum nitride inorganic barrier layer and three layers of amorphous carbon low dielectric constant layers ^ [Key element symbol description] 101, 201, 301, 501, 1010 Substrate 102 ' 202 , 302 transparent anode layer 103 injection hole layer 104 , 204 transmission hole layer 105 , 205 emission layer 106 transmission electron layer 107 injection electron layer 108 metal cathode 110 potential 120 electroluminescent light 200 OLED element 202 anode layer 203 205 Organic material Metal or glass material 204 Cathode layer 206 UV hardenable epoxy resin 208 300, 500 Top electrode 209 Display passivation layer 303 Organic or polymer material 304 Item electrode layer 305, 1020 Embedding layer 38 Γ354032 400 Substrate processing system 402 Process Chamber 406 Wall 410 Cover Assembly 414 Suction Chamber 422 Power Supply 428 Hole 432 Heater 438 Substrate Support Assembly 442 Post 448 Restricted Shadow Box 460 Suspension Plate 474 Power Supply 482 Cleaning Gas Source 511, 512 '513 521 ' 522 600 Deposition Method 1011' 1012 ' 1013 ' 1014 1021 , 1022 , 1023 404 gas supply source 408 bottom 412 Processing space 418 Gas distribution plate assembly 426 Bottom surface 434 Upper surface 440 Substrate 446 Folded pipe 458 Diffuser plate 462 Gas passage 480 Inlet 502 502 Element Barrier layer Low dielectric constant material layer Tantalum nitride layer Amorphous carbon material layer 39

Claims (1)

Γ 354032 X. Patent Application 1. A method of depositing a material layer on a substrate, comprising: placing the substrate in a processing chamber: generating a plasma in the processing chamber; Depositing the material layer onto the substrate at a substrate temperature of about 100 ° C or below; and transferring hydrogen gas to the processing chamber to improve the water barrier effectiveness of the material layer while reducing the deposited material layer Roughness measurements from surface roughness to about 40 A or less. 2. The method of claim 1, wherein the temperature of the substrate is maintained between about 20 ° C and about 80 ° C. 3. The method of claim 1, wherein the material layer precursor comprises a cerium-containing compound selected from the group consisting of: alkane, SiF4, Si2H6, and combinations thereof. 4. The method of claim 3, wherein the material layer precursor further comprises a nitrogen-containing compound selected from the group consisting of ammonia, N20, NO, N2, and combinations thereof. The compound before the material layer: a carbonaceous gas. 5. The method of claim 3, further comprising a group selected from the group consisting of 40 1354032, an oxygen-containing gas, and the like. combination. 6. A method of forming a multilayer embedding layer onto a substrate in a substrate processing system, comprising: depositing one or more germanium-containing inorganic barrier layers to a substrate temperature of about 200 ° C or lower to On the surface of the substrate, comprising: transferring a first precursor mixture and then transferring a hydrogen gas to the substrate processing system to reduce surface roughness of the deposited inorganic barrier layer; alternately depositing the one or more inorganic barriers The layer and the one or more layers of low dielectric constant material 'contains a second precursor mixture to the substrate processing system. 7. The method of claim 6, wherein the surface roughness is less than about 40 A or less. 8. The method of claim 6, wherein the water barrier effectiveness of the multilayered embedding layer is modified to include at about 38. (: and a water vapor transmission rate (WVTR) of less than about 1χ10_2 g/m2/day at a relative humidity of about 90%. 9. The method of claim 6, wherein the multilayer is embedded The water barrier performance of the layer is improved, and after a moisture test of about 1 〇〇 〇, about 1 〇〇, the refractive index (r) is hardly changed. β 41 1354032 10. In the method described in the above 6, the one or more inorganic barrier layer containing lanthanum is deposited at a temperature of about 20 Å (about 10,000 ° C). The method of claim 6, wherein the first precursor mixture comprises a group J composition selected from the group consisting of: Shi Xixuan, SiF4, Si2H6, and combinations thereof. The nitrite containing I2 of the group of the first precursors. The mixture of the materials described in item n of the scope of the patent application further comprises a composition selected from the group consisting of ammonia, N20, N〇, N2, and combinations thereof. The compound of the first precursor group: one containing 13. The method according to the scope of claim U The mixture further comprises a group of carbon gas, an oxygen-containing gas, and a combination thereof, which are selected from the group consisting of the following: A material comprising a group selected from the group consisting of: gasification bismuth, bismuth oxynitride, cerium oxide, cerium carbide, and combinations thereof. 15. The method of claim 6, wherein the one or The multi-low dielectric constant material layer comprises a material selected from the group consisting of: amorphous carbon, diamond-like carbon, and combinations thereof. 42 1354032. The method of claim 6, wherein The second pre-mash mixture comprises a compound selected from the group consisting of acetylene ' Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Ethyl Acetate The method of claim 6, further comprising the step of cleaning the surface of the substrate with a plasma, the plasma being selected from the group consisting of the following: Gas generation: oxygen-containing gas, hydrogen-containing gas, nitrogen-containing 18. The method of claim 6, wherein the plurality of bismuth-containing inorganic barrier layers and the or-low dielectric constant material layer are in the substrate processing system Deposition in a single processing chamber. 1 9. A method of depositing a layer of low dielectric constant material onto a substrate at a low temperature, comprising: placing the substrate in a processing chamber: generating an electricity in the processing chamber Poly; at a substrate temperature of about 20 (TC or less, by transferring a carbon-containing compound to deposit the low dielectric constant material layer onto the substrate, and then delivering a nitrogen gas to the processing chamber to reduce the low dielectric The surface roughness of a constant material layer. The method of claim 19, wherein the low dielectric constant material layer comprises a material selected from the group consisting of amorphous carbon, diamond-like carbon, and combinations thereof. 21. The method of claim 19, wherein the carbon-containing compound comprises a compound selected from the group consisting of acetylene, ethane, ethylene, cesium, propylene, propylene, and propylene. Institute, Dingyuan, Ding, butadiene, benzene, toluene and combinations thereof. 22. The method of claim 19, wherein the substrate temperature is maintained between about 20 ° C and about 80 ° C. 44