TWI352889B - - Google Patents

Description

IX. Description of the Invention: [Technical Field] The present invention relates to a reference for an adjustable temperature coefficient by changing a current difference between a first current source and a second current source to change a pressure and a third temperature coefficient, A reference electric constant with a stable temperature coefficient is obtained. [Prior Art] A reference circuit for generating a reference voltage is widely used in application circuits such as a bias circuit, a regulator, an analog digital and a digital analog converter, and the reference voltage generated by the reference circuit must be temperature dependent. Very low, to avoid temperature factors affecting the stability of the reference voltage. _ As shown in Figure 1, it is a circuit structure diagram of a conventional reference circuit. As shown in the figure, the structure of the conventional reference circuit includes a current mirror circuit η, a variable resistor H 13 and a bi-carrier transistor 15, and the current mirror circuit u sequentially connects the variable resistor 13 and the double carrier. Transistor 15. The current mirror circuit 11 can generate a current Ιχ and a current IpTAT, wherein the current Ιρτατ is a positive temperature coefficient current proportional to the absolute temperature (pr〇p〇rti〇nai t〇Abs〇iute Temperature; PTAT), and The relationship with the current is mirrored. The current ΙΡΤΑΤ flows through the resistor 13 to generate a positive temperature coefficient voltage VPTAT, and the flow through the double carrier transistor (q6) 15 produces a negative temperature coefficient voltage VeTAT that is inversely proportional to the absolute temperature (CTAT). . The reference circuit can obtain a reference voltage VREF by the total addition of the positive temperature coefficient voltage Vp TAT and the negative temperature coefficient voltage Vctat, and the voltage of the VPTAT 4 1352889: 丨 temperature residual _ voltage veTAT 贞 temperature residual, shouted reference. The temperature coefficient of the voltage Vref can be close to the zero temperature coefficient, so as to avoid a drastic change in the reference voltage vREF as a function of the temperature coefficient. Further, the 'current mirror circuit 11 may include transistors Q1, Q2, Q3, Q\, Q5 and a resistor Rx, and the area ratio of the transistors Q4 to *H Q5 of the current mirror circuit u is 1:P' and the current ΙρτΑΤ=ΡΙχ. Therefore, the conventional input circuit can adjust the current ratio of the electric /7IL IpTAT by adjusting the area ratio between the transistor q4 and the transistor Q5, and then change the reference voltage vREF and its temperature coefficient' so that the desired value can be adjusted. Reference voltage VREF. SUMMARY OF THE INVENTION The main object of the present invention is to provide a light-temperature coefficient reference circuit that can change the reference voltage generated by adjusting the current difference between the first current source and the second current source. The temperature coefficient is used to obtain a reference voltage that is stable with a temperature coefficient. #本发月之 - The purpose of the person is to propose a parameter that can adjust the temperature coefficient. The temperature coefficient of the reference voltage of the towel is - the adjustable temperature coefficient ' and is adjusted to zero temperature according to the application requirements of the application circuit for the temperature coefficient. One of the coefficient, the positive temperature wire and the negative temperature sulfur. Still another object of the present invention is to provide a reference circuit capable of adjusting a temperature coefficient, and the reference circuit can also selectively adjust the number of semiconductor elements in the first reference unit and the second reference early stage and the aspect ratio of the semiconductor element thereof: Refer to the electric (four) wire circumference 'to extract the lightning pressure of the various secret points. 5 1352889 Another object of the present invention is to propose a test circuit, which can be fine-tuned by using a reference current source of a temperature coefficient or a second current source of the second current source. Because of the process ^ (9) - front reference charm and its temperature, the present invention provides an adjustable main structure including: - reference circuit of ^ =

Should be voltage; - the first reference unit, ^ the input terminal connection - the supply end is - the - node, the other end is grounded = the output end of the 2 current source is connected to the output of the first current source early in the machine, a first-class source, the input end of which is connected to the second spring test = _ ρ ·., and a first electrical point, the output end of which is grounded; wherein, the first end of the first total voltage of the second degree coefficient, a second reference = a second sum total voltage of the dish coefficient; the second node has a spring-temperature the first-plus total voltage and the second sum total electric ^ =

It has a -third temperature coefficient, which is the difference between the reference voltage coefficient of the first ί ==. 4 4 coefficient and the second temperature The present invention further provides an adjustable temperature coefficient structure comprising: - a first current source Wei /, a reference unit, its - terminal connection Μ + output &ground; a first The first current source is connected to the first current source, and the other end is connected to the supply voltage; the first is connected to the first current source, and the input terminal is connected to the source, and the output is connected to the source. The terminal is connected to the second reference list and the second current point, wherein the input terminal is connected to the supply voltage terminal to the second power socket, so that the first reference unit 6 has a first temperature coefficient Adding a total voltage, the second reference unit has a second summation voltage of a second temperature coefficient; the supply voltage and the second node have a reference voltage 'that is the first summing power and the second The voltage difference of the summed voltage 'the reference voltage has a third temperature coefficient, which is the difference between the first temperature coefficient and the second temperature coefficient.

The first embodiment is a circuit configuration diagram of a preferred embodiment of the reference circuit of the present invention. As shown, the main structure of the reference circuit includes a first current source IA, a first current source IB, a first reference unit 21 - a second reference unit 23. The first current source U is connected to the supply terminal, the first reference terminal is connected to the first terminal, and the current source is connected to the other end of the first node N1'; the second reference unit is connected to the other end. The output of the current source IA is at the node -1, and the other is connected to the input of the source IB at the second node N; and the first - ground. The output of the current material, where the first current source IA and the second bias are Pressing the first reference unit 21, the first sum total of the current difference (IA-IB) - temperature coefficient ～ between the one source 1B, the first reference unit 21 has a second pressure to the second reference unit 23, to 0 The second reference source 23 of the second current source Ib may be biased to a temperature coefficient ～YI) having a second first-to-total voltage V(8)) and a second:: (V(XJ)-V(YI)) Is the second node Ν , , the heart voltage V (the voltage difference between YD VREF = V (x) rv (Y) 〇. The reference voltage Vref on the reference 2, ie

Vref has a third temperature coefficient ref, the second temperature coefficient stone ref is the difference between the first temperature coefficient 10,000 (xj) and the second temperature coefficient cold m), that is, the first current source Ia and the second in the present invention One of the current sources Ib is an adjustable current source, so that the _ current difference (ΙΑ·ΙΒ) can be changed by the adjustment of the first current source U or the second electric Ib, so that the first reference The voltage difference between the second reference unit 23 (ν(- and the temperature difference (cold (XJr cold (ΥΙ>)) is changed. So according to the difference between the voltage difference and the temperature coefficient (Lu (XJ) ^ (γι) The reference reference electrode and its third temperature coefficient stone REF can be adjusted and corrected. 211. The first test sheet 7021 includes a plurality of serially connected semiconductor components ϋ! 12, 213 'each semiconductor component 211, 212, The 213 series is connected to the IT core semiconductor, which can be divided into - ρ channel gold oxy-half - Ν 餹 餹 Ν Ν channel MOS semi-transistor, Ρ type bipolar transistor, 曰 曰 carrier transistor , Ρ type junction field effect transistor, a 接 type terminal: it 1: 1: ΡΝ diode, - Zener diode and - Schottky II 213 · ή · real ^ * In the first embodiment, the semiconductor elements 211 and 212 of the reference unit 21 are formed by a combination of semiconductors and semiconductors. The semiconductor device 211 is a p-channel MOS transistor.

^^ 212 is a PN diode, and semiconductor element 213 is N = pressure T body: each - semiconductor element - has 〇 GS (Xl) V DRN-U, \ ^ smell and its corresponding temperature system ( X1), "(purchase), /S(XN). The current difference (IA_IB) between the first current source 1A and the second current source IB may be biased to the first reference unit 21 such that the first reference unit 21 has a first temperature coefficient θ (the first total voltage of χ·〇) ν(χυ 'the first total voltage V(XJ) is the sum of the junction voltages of the semiconductor elements 211, 212, 213, for example: V(xn~VGs(xi)+...+VD(XN_i)+ VGS (χΝ)' and the first temperature coefficient (XJ) is the sum of the temperature coefficients of the semiconductor elements 211, 212, 213, for example: point (χ) Γ cold (χι) + .·.+ β (XN. D+ cold (XN). The first reference unit 21 adopts a method of adjusting the current difference (Ia-Ib) between the first current source 込 and the second current source 1b to change the first total voltage V(XJ) and The first temperature coefficient β (xj) ' may be further selected by the number of semiconductor elements in the first reference unit 21 or by changing the aspect ratio of each semiconductor element' and the first temperature coefficient may also be adjusted to a negative temperature coefficient. Or a positive temperature coefficient. Further, the second reference unit 23 includes at least one semiconductor element 231, and the semiconductor element 231 is a semiconductor element connected in the form of a diode. And can be selected as a channel of MOS semi-transistor, a channel of MOS semi-transistor, a 双 type of double carrier transistor, a 双 type of double carrier transistor, a 接 type junction field effect One of a crystal, a 接-type junction field effect transistor, a ΡΝ diode, a Zener diode, and a Schottky diode, and the semiconductor device 231 has a junction voltage VGS (Ylv^ Its corresponding temperature coefficient β (Υ1) 0 The second current source ΙΒ can be biased to the second reference unit 23 such that the second reference unit 23 has a second temperature coefficient 々(γι)> ν(γι), the second total voltage V(yi) is the junction voltage of the semiconductor element 231, for example: V(yi)=Vgs(yi), and the second temperature coefficient cold (YI) is the semiconductor element 9 1352889 The temperature coefficient of 231, for example: θ(γι)ι(10). Of course, the second reference unit 23 changes the second sum% and its second temperature coefficient point in addition to the current (four) square wire that closes the second current source ΐβ ( ΥΙ) 'You can also choose to refer to the first - reference unit ^, by changing the number of sets or the aspect ratio of the semiconductor components Adjusting the second summation. The voltage V(YI) and its second temperature coefficient is ΥΙ), so that the reference voltage ν and its third temperature coefficient are not further adjusted by REF. In addition, the second temperature coefficient stone (YI) is also The tank can be one of the positive temperature coefficient or the temperature of the money. Also, as described above, the 'third temperature coefficient' is the first temperature coefficient Θ (XJ) and the second temperature coefficient y5 (YI). The difference (none (10)_stone (γι)), the first temperature coefficient is cold (8) or the second temperature coefficient is 10,000 (ΥΙ>, the third temperature coefficient ~EF will follow the change. Therefore, the reference circuit of the present invention can also "adjust the temperature system (4) (10) and the second temperature coefficient to the same temperature coefficient so that the difference (~)_) between the two is zero. Then the third temperature system The reference voltage vREF can be a temperature-independent reference voltage to increase the stability of the application. Of course, in another embodiment of the reference circuit of the present invention, the subsequent application circuit can also be used. (For example: temperature sensor) adjust the difference between the first temperature coefficient ~) and the second temperature coefficient ^ (~) -~)) to the positive temperature or 贞 temperature wire for the application of the temperature coefficient. The circuit can be used to change the temperature according to the variation of the reference voltage VREF. Please refer to FIG. 3, which is a circuit structure diagram of another embodiment of the reference circuit of the present invention. As shown in the figure, the main structure of the reference circuit of the present embodiment is The second 10 = the reference circuit is substantially the same, including the H current source U, a second current source IB, a first reference unit 21 and a second reference unit. However, the first reference unit of the invention towel 2 Semiconductor component included The semiconductor elements included in the reference unit 23 may all be selected to use a phase element of the phase type. For example, all of the p-channel MOS oxygen-semiconductor 曰N-channel MOS transistor, p-type bipolar transistor, N Type double carrier electric b body, P type junction field effect transistor, n-type junction field effect transistor, pN diode, a Zener diode or Schottky diode. This is not only convenient In the circuit layout and avoiding the mismatch of the 7L characteristics of the semiconductor components, the process offset is reduced during the process and the accuracy of the circuit design is increased, so as to obtain a correct reference voltage VREF and its third Temperature coefficient stone REF. This embodiment is described by taking a P-channel MOS transistor as an example. The semiconductor elements 214, 21s, 216 of the first reference unit 21 of the reference circuit and the semiconductor element 232 of the first > 233 are all p-channel MOS transistors. The second reference unit 23 is selected to include a plurality of semiconductor elements 232, 233, such that the voltage range of the reference voltage Vref can be expanded to provide multiple sets of reference voltages Vref. . 4 is a circuit structural diagram of still another embodiment of the reference circuit of the present invention. As shown, the first current source of the present invention includes a third semiconductor component 25, and the second current source Ib includes a first The semiconductor element 27 is selected from the group consisting of a p-channel MOS transistor, a P-type bipolar transistor, and a p-type junction field effect transistor of 1352889. The fourth semiconductor component 27 can be selected as one of: a channel gold oxide half transistor, an N type double carrier transistor, and an N type junction field effect transistor. In the present invention, the first The current source IA and the second current source Ib can also change the magnitude of the current value by adjusting the aspect ratio of the third semiconductor element 25 and the fourth semiconductor element 27, thereby adjusting an appropriate current difference (Ia-Ib). ), and obtain a practical demand reference voltage vREF and its third temperature coefficient call REF.

Moreover, the reference circuit of the present invention further includes a first biasing unit 31 and a second biasing unit 33, wherein the first biasing unit 31 is connected to the supply voltage vDD' for generating a bias voltage for biasing the third semiconductor component 25. Pressing to generate the first current source IA; and the second biasing unit 33 is connected between the first biasing unit 31 and the ground for generating a bias voltage to bias the first member 27 to generate the second current Source lB. +conductor疋

In another embodiment of the present invention, the first current source u may include a plurality of third semiconductor elements 25 connected in series, and the second current source IB may include one or more series connected Four semiconductor elements 27 are produced. And 'may be overlapped according to the number of the second semiconductor elements 25 to the wire should be touched VDDm =: voltage = the number of the third semiconductor element 2 = the number of pieces 27 to be added to the second number: The second biasing unit 33 generates a biasing semiconductor element 27, respectively. Thereby, the dust-carrying ability of the first-bias unit 31 and the =:! 疋33 is increased to provide a sufficient first current source and a second power: 12 source Ib 0 : the pressure unit 31 and the second bias unit: == The process offset will occur, so that the reference circuit IVREF and its third reference generated by the reference circuit are different from the original circuit design. And the coefficient is cold REF,

By the setting of the variable resistor 35, the variability will regulate the second illuminating tempo value, and the second current generated by the variator 27 will be adjusted. REF, the first use of the invented reference material over-variable resistor 11 35 fine-tuning as an error caused by the offset factor, thereby obtaining the voltage VREF and its third temperature coefficient, please refer to Figure 5 It is a reference structure diagram of the invention. As shown in the figure, refer to the circuit of =2 and real &

The flow source 1A, the second current source c includes a -first-electricity=connector=the source 1A of the turn-of-week-reference unit 1, the voltage V-; the second reference unit 53 the first one: the second: the source The input terminal is connected to the voltage VDD of the second current source 于 at the second section _ the other end of the first section of the W (four) current output terminal. " 2 The input terminal of a current source 1B is connected to supply a current difference dlB) 可51 between the first reference first source 1A and the first current source 1B, so that the first reference unit 51 has a temperature of 13 1352889 ^ The -th total voltage v(8)) of the coefficient '). The second current source Ib may be biased to the second reference unit 53 such that the second reference cell has a second summed voltage V(YI) of a second temperature coefficient /3(γι). The voltage difference between the first total voltage v(5)> and the second total voltage ν(γι) is the reference voltage Vref between the supply voltage Vdd and the second node 即2, that is, VREF=V (phantom. The reference voltage Vref has A third temperature coefficient stone REF, the third temperature coefficient is not ref is the difference between the first temperature coefficient side (four) and the second temperature coefficient ~), that is, the corpse ~) _ Lu (YI). / one of the first current source Ia and the second current source Ib in the present invention is an adjustable current source, and therefore can pass through the first current source or the second current source IB (four) change both妓 (Ia_Ib), this correction of the reference voltage VREF & its third temperature coefficient EF, so that a temperature coefficient stable reference voltage Vref can be obtained. The first reference unit 51 includes a plurality of semiconductor elements 511, 512, 513 connected in series. 'The semiconductor elements 5u, 512, and M3 are semiconductor elements connected to the pole-opening y type, and can be selected as _p channel gold oxide respectively. Semi-transistor, -N-channel gold-oxygen semi-transistor, -p-type bipolar transistor, -N-type bipolar transistor, -p-type junction field effect transistor, -N-type junction field effect transistor One of the -PN diode, a Zener diode, and a Schottky diode. In addition, the semiconductor elements 51 512 and 513 of the first reference unit 51 of the present embodiment may also be selected in a manner of mashup, so that the semiconductor elements of the semiconductor type are combined. For example, the semiconductor element is an N-type double carrier. The transistor and semiconductor element 512 are pN diodes, and the semiconductor elements 513 14 1352889 are P-type bipolar transistors. Each of the semiconductor elements 511, 512, and 513 D is connected to the surface voltages VBE (X1), VD (X2), VBE (XN) and their corresponding temperature coefficients 〜), ~2), and (10). In addition, the current difference (Ia_Ib) between the first current source Ια and the second current source Ib can be biased to the first reference unit 5 such that the first reference unit 51 has the first/total voltage of the /JHL degree coefficient cold. V(8)), the first total voltage is the sum of the junction voltages of the semiconductor elements 511, 512, and 513, for example: 乂(9)^呵叫+乂幻幻十...+乂仙(圳, and the first temperature coefficient is not (10) is the sum of the temperature coefficients of the semiconductor elements 511, 512, and 513, for example, 10,000, the call (Χ1) + β (X2) + ... + Lu (XN). The first reference unit 51 is used to adjust the first current. The source is in a manner of a current difference (Ia-Ib) between the second current source Ib to change the first summed voltage v and its first temperature coefficient Lu (χ: 〇, alternatively selected by the first reference unit 51 The number of semiconductor elements is set or the aspect ratio of each semiconductor element is changed to be further adjusted' and the first temperature coefficient /5 (xj} can also be adjusted to a negative temperature coefficient or a positive temperature coefficient. Further, the second reference unit 53 includes At least one semiconductor element 531, which is a semiconductor element connected in the form of a diode. The system can be selected as a channel of MOS semi-transistor, a channel of MOS semi-transistor, a 双 type of bi-carrier transistor, a 双-type bipolar transistor, and a p-type junction field effect transistor. a one-sided junction field effect transistor, a ρν diode, a Zener diode, and a Schottky diode, and the semiconductor device 531 has a junction voltage VBE(Yi) And its corresponding temperature coefficient /3 (γι). 15 Further 'the second current source U biased to the second parameter = two parameters f element 53 has a second temperature coefficient % of the second total ί IV (YI) 'Different voltage ν(10) is the junction voltage of the semiconductor element 531, for example, .V(yi)=Vbe(Yi), and the second temperature coefficient is the semiconductor element plus the temperature coefficient point (ΥΙ} 'for example: cold (YI ) = cold (7)). Of course, the second reference list S 53 can be selected by referring to the first reference unit 5 in addition to the method of adjusting the second current value to change the second total voltage V (YI) and its By changing the set number of semiconductors to the number of wires of the conductor element, the second total electric constant V (YD and its first temperature coefficient stone (叩, For the reference voltage ^ third temperature system ❹ REF will be further adjusted. In addition, the second temperature coefficient point (10) can also be adjusted to one of the positive temperature coefficient or the negative temperature coefficient of the basin. The third temperature is the difference between the first temperature coefficient 10,000 (10) and the second temperature coefficient β (γι) (no (xj) _ 10000 (γι)), then the first temperature coefficient point (XJ) or the second temperature coefficient When the stone (γι) is adjusted, the third temperature system of the shell 4, the stone REF will follow the change. Thereby, the reference circuit of the present invention can also adjust the first speed coefficient β (XJ) and the second temperature coefficient point (7)) The same temperature coefficient 'is such that the difference between the two (y3(XJ)_y3(Yi)) is zero. Then the third temperature coefficient, cold REF, becomes a zero temperature coefficient, and the reference voltage vREF can be a temperature-independent reference voltage to increase stability in application. Tian Ran, in another embodiment of the reference circuit of the present invention, the temperature coefficient can also be determined according to the application requirements of the subsequent application circuit (for example, temperature sensor) for the temperature coefficient; 5 (x is the second temperature coefficient 厶The difference between (γι) (cold (XJ) 1352889 - stone (γυ) is adjusted to a positive temperature coefficient or a negative temperature coefficient, and the temperature is changed by the fluctuation of the reference voltage VREF. Please refer to Fig. 6. A circuit structure diagram of still another embodiment of the reference circuit of the present invention. As shown, the first current source of the present invention includes a third semiconductor component 55, and the second current source Ib includes a fourth semiconductor component 57. The third semiconductor component 55 can be selected as one of a p-channel MOS transistor, a P-type bipolar transistor, and a P-type junction field effect transistor, and the fourth semiconductor component 57 The system may be selected as one of an N-channel MOS transistor, a -N-type bipolar transistor, and an N-type junction field effect transistor. In the present invention, the first current source Ia and the second The current source can also be adjusted via the third semiconductor component 55 and the fourth semiconductor The aspect ratio of the component 57 is changed by the magnitude of the current value, respectively, thereby adjusting the appropriate current difference (MB) to obtain - the actual required reference voltage Vref and its third temperature coefficient are not REF °, and the reference circuit of the present invention The first biasing unit 71 and the second biasing unit 71 are grounded to generate a bias voltage to bias the third semiconductor component 55 to generate the first current source. IA; and a second biasing unit 73 is connected between the supply voltage Vdd and the first biasing unit 71 for generating a bias voltage to bias the fourth semiconductor component 57 to generate the second current source IB. In another embodiment of the present invention, the first current source IA may include a plurality of third semiconductor elements 55 connected in series, and the second current source Ib may include one or more fourth semiconductor elements connected in series. 57 is generated and a plurality of second biasing units 73 are stacked on the second semiconductor component 57, and the voltage is applied to the corresponding fourth semiconductor component 57, respectively. According to the third semiconductor Adding a plurality of first biasing units 71 sequentially connected to the second biasing unit and the ground, and generating a bias voltage to the corresponding second semiconductor component 55, respectively, thereby increasing the number The biasing capability of the biasing unit 71 and the second biasing unit 73 to provide the first current source Ia and the second current source Ib. Further, the reference circuit of the present invention further includes a variable resistor 75, and The variable resistor H 75 is connected between the first bias unit 71 and the ground. The change of the resistance of the variable resistor 75 by the setting of the variable resistor 75 will adjust the bias value of the first bias voltage to change The first-wire ΙΑ ' _ reference voltage generated by the third semiconductor component % and its third temperature coefficient REF can be corrected and adjusted 0. Therefore, the fine-tuning effect of the reference circuit Wei variable resistor 75 of the present invention is corrected. The error caused by the process offset factor, thereby obtaining a positive reference electrical IVREF and its third temperature coefficient ~ ^ to two = Shi = τ preferred embodiment, not described (4) H & (4) The range of profit and profit = the second special = the inside one FIG Ming] m for transfer of the first configuration of the circuit of FIG. 1352889 Fig. 2 is a circuit diagram of a preferred embodiment of the reference circuit of the present invention. Figure 3 is a circuit diagram showing still another embodiment of the reference circuit of the present invention. Figure 4 is a circuit diagram showing still another embodiment of the reference circuit of the present invention. Figure 5 is a circuit diagram of still another embodiment of the reference circuit of the present invention. Figure 6 is a circuit diagram showing still another embodiment of the reference circuit of the present invention.

[Main component symbol description] 11 Current mirror circuit 13 Variable resistor 15 Bipolar transistor 21 First reference unit 211 Semiconductor element 212 Semiconductor element 213 Semiconductor element 214 Semiconductor element 215 Semiconductor element 216 Semiconductor element 23 Second reference unit 231 Semiconductor element 232 semiconductor element 233 semiconductor element 25 third semiconductor element 27 fourth semiconductor element 31 first biasing unit 33 second biasing unit 35 variable resistor 51 first reference unit 511 semiconductor element 512 semiconductor element 513 semiconductor element 53 Second reference unit 531 semiconductor element 55 third semiconductor element 57 fourth semiconductor element 71 first bias unit 73 second bias unit 75 variable resistor N1 first node N2 second node

Claims (1)

1352889 July 8th, 100th revised replacement page 'Application patent range A reference circuit with adjustable temperature coefficient, the main structure is one, the electric 'claw source, its input terminal is connected with a supply voltage; a first-reference unit, its - The terminal is connected to the first node, the other terminal is grounded, the output terminal Φ has a plurality of (four) semiconductor components, and the test unit includes a second reference unit, one of the first node, the second node ? An output body member of the first current source' and the first reference includes a semiconductor element Dolby having at least a semiconducting reference cell; a 7° semiconductor element and the first conductor element; and a self-connected diode a half-ST of the form: the input terminal is connected to the second reference unit and the other is the first point, the other of which is _$, the first reference unit and „Φ includes the total voltage, the second Dimension - the first of the temperature coefficient - plus two total voltage; the second; mouth::: the first total voltage of the temperature coefficient of the fish 10th > test voltage 'that is the voltage has - second; The voltage difference 'refers to the second temperature coefficient, that is, the first temperature coefficient and the garden;: the item to the circuit, wherein the first electricity source - the current source of the first half of the ... :rguide 20 1352889 - • . On July 8th, 100th, the replacement page body component can be selected as a P-channel MOS transistor, an N-channel MOS transistor, and a P-type dual-carrier transistor. , an N-type bipolar transistor, a P-type junction field effect transistor, an N-type junction field One of a transistor, a PN diode, a Zener diode, and a Schottky diode. 4. The reference circuit of claim 3, wherein the first temperature coefficient is The value of the first summed voltage is selected to be adjusted by one of the number of semiconductor elements of the first reference unit and the aspect ratio of the semiconductor element, and the second temperature coefficient and the second total voltage are The value may be selected by one of the number of semiconductor elements of the second reference unit and the aspect ratio of the semiconductor element. 5. The reference circuit of claim 1, wherein the third temperature coefficient is The one of the zero temperature coefficient, the positive temperature coefficient, and the one of the negative temperature coefficients may be selected. The reference circuit of claim 1, wherein the first Φ current source includes one or more a third semiconductor component connected in series, and the second current source includes one or more fourth semiconductor components connected in series. 7 - The reference circuit according to claim 6 of the patent application, wherein each third The conductor component can be selected as one of a P-channel MOS transistor, a P-type bipolar transistor, and a P-type FET, and each of the fourth semiconductor components can be selected separately. It is one of an N-channel MOS transistor, an N-type bipolar transistor, and an N-type junction field effect transistor. 21 1352889 - , July 8, 100 Revision Replacement Page 8 The reference circuit of claim 7, wherein the first current source and the second current source respectively change the magnitude of the current value by adjusting an aspect ratio of the third semiconductor component and the fourth semiconductor component. The reference circuit of claim 6 further comprising a first biasing unit corresponding to one or more of the third semiconductor components, and one or more of the fourth semiconductor components a second biasing unit; wherein each of the first biasing units is sequentially connected to the supply voltage, respectively generating a bias voltage to the corresponding third semiconductor component, and each of the second biasing units is sequentially stacked on the first biasing Between the pressure unit and the ground, respectively Health of bias voltages to the corresponding fourth semiconductor elements. 10. The reference circuit of claim 9, further comprising a variable resistor coupled between the first biasing unit and the second biasing unit for adjusting the second bias voltage. 11. A reference circuit capable of adjusting a temperature coefficient, the main structure comprising: a first current source, the output end of which is grounded; Φ a first reference unit, one end of which is connected to the input end of the first current source a node, the other end is connected to a supply voltage; a second reference unit having one end connected to the input end of the first current source to a first node; and a second current source having an output end connected to the second reference unit The other end is connected to the supply voltage at a second node, wherein the first reference unit has a first total voltage of a first temperature coefficient, and the second reference unit has a second second temperature coefficient. a total voltage; the supply voltage and the second node have a parameter of 22 1352889 - July 8, the corrected replacement page test voltage, that is, the voltage difference between the first summed voltage and the second summed voltage, The reference voltage has a third temperature coefficient, which is the difference between the first temperature coefficient and the second temperature coefficient. 12. The reference circuit of claim 11, wherein one of the first current source and the second current source is an adjustable current source. The reference circuit of claim 11, wherein the first reference unit comprises a plurality of semiconductor elements connected in series, and the second reference unit comprises at least one semiconductor element, and the first reference unit The semiconductor element and the semiconductor element of the second reference unit are both connected to a semiconductor element in the form of a diode. The reference circuit of claim 13, wherein each of the semiconductor elements of the first reference unit and the semiconductor elements of the second reference unit are respectively selected as a P-channel MOS transistor, N-channel MOS semi-transistor, a P-type bi-carrier transistor, an N-type bipolar transistor, a P-type junction field effect transistor, an N-type junction field φ effect transistor, a PN II One of a polar body, a Zener diode, and a Schottky diode. The reference circuit of claim 14, wherein the first temperature coefficient and the first total voltage are selected from the number of semiconductor components of the first reference unit and the length and width of the semiconductor component. The adjustment is made by one of the second temperature coefficient and the second total voltage, and the number of the semiconductor elements of the second reference unit and the aspect ratio of the semiconductor element can be selected. 16) The reference circuit according to claim 11 of the patent application, wherein the third page of July 8, 100, the corrected replacement page temperature coefficient is selected from the group consisting of a zero temperature coefficient, a positive temperature coefficient and a negative temperature coefficient. One of them. The reference circuit of claim U, wherein the first motor source comprises one or more third semiconductor elements connected in series, and the first current source comprises one or more series connected Fourth semiconductor element "The reference circuit described in Item 17 of the Swallowing Range, the 1st part of the slab can be selected as an N-channel gold oxide; the transistor: the j-electrode and the N-type junction field-effect transistor The gold-oxygen semi-four-cut component can be divided into one p-pass, pet-milk-plated crystal, and one of the electric field-effect transistors. The carrier transistor and the 接-type junction 19 Such as applying for a patent range current source and the second electric,,, and ^ reference circuits, wherein the first and fourth semiconductors are adjusted via the third semiconductor element , the length and width ratio of the mountain guide basket and the change of the wild, and * gentleman f 2 〇. For example, the scope of the patent application, the tenth, less winter power grab the value. The third semiconductor reference circuit further includes a pair of elements, and a first biased single bias unit corresponding to the plurality of stacked ones, wherein one or more of the stacked second voltages And respectively generating a biasing element sequentially connected to the first biasing unit to supply the fourth semiconductor component in sequence, respectively generating a bias electric dust to the corresponding third H unit and the ground, such as applying for a patent Range 2nd + one conductor element. The variable resistor, connected to the #松翏考电路, also includes a voltage between the early element and the ground. The first bias voltage can be adjusted by using the 24 21 1352889 - • '8 July 8 correction replacement page. 25