TWI352250B - Liquid crystal display device with photosensor and - Google Patents
Liquid crystal display device with photosensor and Download PDFInfo
- Publication number
- TWI352250B TWI352250B TW096148779A TW96148779A TWI352250B TW I352250 B TWI352250 B TW I352250B TW 096148779 A TW096148779 A TW 096148779A TW 96148779 A TW96148779 A TW 96148779A TW I352250 B TWI352250 B TW I352250B
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- substrate
- liquid crystal
- ion implantation
- film
- Prior art date
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
- G02F1/13318—Circuits comprising a photodetector
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Light Receiving Elements (AREA)
Description
1352250 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種液晶顯不器及其勢造方、、 J次’导寸別是腦於— 及其製造方法 種具有提高感測效率之光感測器的液晶顯示器 、 【先前技術】 如同不_移動電子設備，例如移動電話、個人數位助理 (Pe醜㈣italassist賊PDA)、及筆記型電腦—樣料 =輕的侧W賴求糊加。询顯示器的例 子包料液晶顯的（LCD)、場發軸示器（咖）、以及電衆 顯不器（PDP)。在平面型液晶顯示器 电κ 女旦制、生夕妯亇—θ 夜日日顯不态由於適合於 大里找之敝、谷㈣鶴方法及實_高析像度而受到更多 的關注。 液晶顯示器對應於發射型的液晶顯示器，其透過折射各向里 性控制穿過^日日日層的光線透射比，因此於—螢幕上顯示-影 像。為了在液晶顯示器上顯示期望之影像需要—背光單元，背光 早'之光線穿過此液晶層。因此，液晶顯示H包含有-液晶面板 及配設於此液晶面板後部之背光單元。 曰此背光單7L向此液晶面板發射具有缺發光度之光線。也就 疋》兄’由於月光早凡甚至在相對明亮之環境下發射恆定發光度之 光線□此&加了知〉肖耗。實際上，背光單元使用較大百分比 I月匕量更4而舌，大約80%或更多的總能量驅動液晶顯示 1352250 * # 器。為了製造低耗能類型之液晶顯示器，使用不同之方法以減少 背光單元之能量消耗。 此減少背光單元之能量消耗的不同方法其中之一為提供一種 液晶顯示器’其具有一能感測來自周圍的外部光線之發光度的光 感測器。 . 請參閱「第1圖」，液晶顯示器1〇〇，其具有一能感測來自周 圍的外部光線之發光度的光感測器，包含有一液晶面板150,其配 鲁壽設有一頂基板110、一底基板120、以及一配設於此頂及底基板110 及120間之液晶層130 ; —背光單元200，係配設於此底基板12〇 且向液晶面板150發射光線。此液晶面板15〇定義有一顯示影像 之顯示區域；一不顯示影像之非顯示區域；以及一黑矩陣區域， 係配設於此顯示區域及此非顯示區域間，用以阻擔光線。 頂基板110對應於一彩色濾光器基板。同時，紅色（r)綠色 (G)及藍色（R)濾光益1〇1形成於頂基板no之畫素區域中， 鲁鲁並且黑矩陣膜105形成於頂基板11〇之黑矩陣區域中。儘管圖中 未詳細揭露，黑矩陣膜105配設於晝素之邊界（圖未示）中，因 此防止光線洩漏。彩色濾光器101係為包含有染料或顏料的樹脂 層。此外，可形成一塗覆層（圖未示）以平坦彩色濾光器101之 表面。此塗覆層上配設有一共同電極103,用以向液晶層130施加 一電壓。 底基板120配設有複數個閘極及資料線125及127，此複數個 1352250 閉極及資料線125 * 127彼此蚊狀減數健素。而且，一 用以開關各晝素之開關裝置配設於閘極及資料線125及127之各 •交^處。舉例而言，開關裝置由-薄膜電晶體121所形成，薄膜 .電曰曰體121具有一閘極、一半導體層、以及複數個源極及沒極。 ;、、;/灸閘極墊125a配設於各閘極線125之一側，並且一資料墊 127&配°又於各資料線127之一側，其中此閘極及資料墊1仏及 牙各閘極及資料線125及127施力σ信號。各晝素配設有一晝 馨素雜123，其中底基板120之晝素電極I23與頂基板110之共同 電極103相面對。共同電極1〇3及晝素電極123纟透明的導電材 料所形成，此種材料適合於向背光單元2〇〇發射光線。 而且 光感測器140形成於底基板120之黑矩陣區域中， 以感測外部光線之發光度且控制背光之亮度。為了將光感測器140 暴露於外部環射’部份去除頂基板Ί10之黑糾巾之相應部份。 清參閱「第2圖」’如果黑矩陣膜1〇5之相應部份自頂基板11〇 ♦之黑矩陣區域上去除，則底基板之光感測器Μ〇暴露於外部。 同時’當形成薄膜電晶體121時同時形成光感測器14〇。 「第3圖」係為包含於習知技術之液晶顯示器中之一薄膜電 晶體及一光感測器之橫截面圖。 明參閱「第3圖」，一底基板12〇包含有一薄膜電晶體區域(工）， 其具有一 Ρ型離子植入區域之通道；一薄膜電晶體區域（11)，其 具有一η型離子楂入區域之通道；以及一光感測器區域。 1352250 請再次參閱「第3圖」，一p型半導體層163、— η型半導體 層164、以及一 η型及ρ型半導體層165以固定之間隔形成於具有 . 一緩衝層162之底基板120上。然後，一閘極絕緣膜166形成於ρ 型半導體層163、η型半導體層164、以及η型及ρ型半導體層165 上。而且，一閘極168形成於此Ρ型半導體層163及11型半導體 • 層164上之閘極絕緣膜166之上。 * 而且’一絕緣夾層Π0形成於此閘極168上，絕緣夾層17〇 ♦ φ具有-用以暴露半導體層之接觸孔。然後’源極及及極m形成 於絕緣夾層Π0上，其中此源極及祕m通過此接觸孔分別與ρ 型半導體層163、n型半導體層164、以及n型及ρ型半導體層 相連接，以暴露此半導體層。 η型半導體層164之形成應致使其錢極及祕172相接觸之 區域配設有- Π+型離子植入區域164a、與閘極絕緣膜166相接觸 之區域配設有-離子非植入區域祕、並且其間之區域配設有一 、· η-型輕摻雜汲極（L_y_Dc)ped_Drain，LDD)層 16知。 - ㈣半錢層163之形成不具有解之_祕極（LDD)層 -且其形成應致使與源極及沒極172相接觸之區域配設有- ρ型離 子植入區域脑且與閘極絕緣膜166相接觸之區域配設有一離子 非植入區域+163b。 里及P里半導租層165之形成應致使其與源極及没極π 相接觸之區域配設有-n+型及p型離子植入區域驗及職， 1352250 =且其與閘極絕緣膜166相接觸之區域配設有_離子植入區域 165c 〇 —麵成輕摻雜沒極（LDD)層之離子植入過程中，透過使用 •.—閘極而不使用—光阻抗侧案遮罩形成η型半導體層164之n_ 型輕摻雜汲極（LDD)層164e，其中此間極形成於作為一離子植 . 遮罩之閘極纟&緣膜上。然*，此難同光阻抗麵案遮罩一樣， , 鮮在形成娜親極（LDD)層的軒^過財形成於光感 • #測器區域⑽上。因此，n型離子摻雜於n+型離子植入區域⑽ 及P型離子植入區域l65b間之離子植入區域16父中。 在光感測器區域（ΠΙ)之情況下，如果離子植入區域收形 成於n+型離子植入區域165a及p型離子植入區域祕間，根據 外部光線之強度難以檢查此光感測器區域中之電流強度。 換句話而言’如果外部光線變強，提高了流過源極及沒極之 電々IL強度，也就是說，提咼了 n+型及p型離子植入區域丨及 ♦籲之電流強度。同時，如果外部光線變弱，降低了流過源極及 汲極之電流強度。因此，可能根據外部光線之強度檢查此光感測 器區域中之電流強度。 然而，由於形成於n+型離子植入區域165a及p型離子植入區 域165b間之離子植入區域165c影響流過p型及n+型離子植入區 域之電流強度’習知技術之光感測器區域不能根據外部光線之強 度檢查電流強度，以致光感測器區域之感測效率變得惡化。也就 1352250 疋祝’如「第4圖」所示，習知技術之光感測器區域之及極·源極 電壓Vds與沒極電流呈現非線性特徵，因此，難以根據外部光線 之強度精確檢查外部電流之差別。 【發明内容】 雲於以上的問題，本發明的主要目的在於提供—種具有光感 測器的液晶顯示11及其製造方法，其能充㈣除由於習知技術1 局限及缺點所帶來之一個或多個問題。 # ^本發明的目的之一在於提供一種具有提高感測效率之光感測 器的液晶顯示器及其製造方法。 本电明其他的優點、目的和特徵將在如下的朗書中部分地 加以闡述’並且本發明其他的優點 '目的和特徵對於本領域的普 通技術=員來說，可以透過本發明如下的說明得以部分地理解二 者可、攸本翻的貫踐巾得出。本發明的目的和其他優點可以透 過本㈣所記書和f請專娜财特. •合圖式部份，得以實現和獲得。 為了獲得本發_這些目的和其他優點，斯本發明作具體 ::::性，述，本發明的一種具有光感測器的液晶顯示器其 液阳面板，此液晶面板具有彼此相結合之第一基板及第 抑了且f基板及第二基板間配設有-液晶層、以及光感測 益’系形成於第二基板上，用以感測來自周圍之外部光線，宜中 此光感測器包含有—半導體層，係形成於此第二基板上，並魏 上力2250 设有n+型離子植入區域、離子非植入區域及輕微摻雜區域；一絕 緣膜，係形成於此第二基板上，用以覆蓋此半導體層；一鈍化膜， . 係形成於此第二基板上，用以覆蓋此絕緣膜；一第一接觸孔，係 . 穿過此絕緣膜及鈍化膜，用以暴露半導體層之源極及汲極區域； 源極及汲極，係穿過第一接觸孔與半導體層之源極及汲極區域相 • 連接；一離子植入防止膜，係形成於絕緣膜上且與離子非植入區 • 域相重宜，以及一第二接觸孔，係穿過鈍化膜及離子非植入區域 •鲁上之離子植人防止膜，以便於向離子非植入區域提供外部光線。 另一方面，本發明的一種具有光感測器的液晶顯示器包含有 一液晶面板，其具有彼此相結合之第一基板及第二基板，且第一 基板及第二基板間配設有一液晶層、以及光感測器，係形成於第 二基板上，用以感測一外部光線，其中此光感測器包含有一半導 體層，係形成於此第二基板上，並且配設有n+型離子植入區域、 離子非植入區域及輕微摻雜區域；一絕緣膜，係形成於此第二基 瞻泰板上’用以覆蓋此半導體層；第一及第二輔助圖案，係相鄰於此 •半導體層形成於此絕緣膜上；-純化膜，係形成於此第二基板上， • 用以覆蓋此第一及第二辅助圖案及此絕緣膜；一第一接觸孔，係 穿過舰_祕倾，帛以絲此半導體層之雜及没極區 域；源極及没極’係穿過此第一接觸孔與此半導體層之此源極及 汲極區域相連接，並且與第一及第二輔助圖案相重疊；第一及第 .二輔助電容係形成於此雜及汲極與此第—及第二獅圖案 12 1352250 間刀别相重：ε之部份中；—離子植人防蝴，係形成於此絕緣膜 上且”匕離子非植入域相重疊；以及一第二接觸孔，係穿過此 .鈍4膜匕離子非植入區域上之源極及沒極，並且透過去除此離 子植人防止叙-些或全部部細形成，賤於向此離子非植入 • 區域提供此外部光線。 • ㈣’離子植人防止膜之此中心部份於形成此第二接觸孔之 過程中去除。 # •φ 而且此維子植入防止膜部份去除，以致當形成此第二接觸 孔時離子植入防止膜僅在對應於此η+型離子植入區域的第二接觸 孔之一底邊緣保留。 而且此喊子植入防止膜及此源極及沒極由同一種材料所形 成。 另一方面，本發明的一種具有光感測器的液晶顯示器之製造 方法包含有以下步驟：準備—具有—彩色渡光層之第—基板；準 ••借-具有薄膜電晶體及光感測器區域之第二基板；以及形成一液 •曰曰曰層於此第一及第二基板間，其中準備此第二基板包含以下步 驟.形成一緩衝層於此第二基板上；形成複數個半導體層於此薄 膜電晶體及光感測n區域之緩衝層上；形成—絕緣膜於此第二基 板上’用以覆盍半導體層；形成一間極於此薄膜電晶體區域之此 絕緣膜上，此閘極與此複數個半導體層相重疊，並且形成一離子 植入防止膜於光感測器區域之絕緣膜上；形成η+型及Ρ型離子植 13 丄叫250 入區域至：>、之一於此薄膜電晶體區域之此半導體層中，並且透過 使用閘極及離子植入防止膜同時形成n+型及p型軒植人區域至 乂之、一離子非植入區域及一輕微摻雜區域於此光感測器區域 之半導體層t ;形成-純化膜於此第二基板之整個表面上；形成 第-接觸孔’用以暴露此薄膜電晶體中的半導體層之源極及汲1352250 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a liquid crystal display device and a potential manufacturing method thereof, and the J-thinking method is capable of improving sensing efficiency. Liquid crystal display of light sensor, [Prior Art] Like no mobile electronic device, such as mobile phone, personal digital assistant (Pe ugly (four) itlassist thief PDA), and notebook computer - sample = light side W . Examples of displays are liquid crystal display (LCD), field axis display (coffee), and digital display (PDP). In the flat-type liquid crystal display, the electric κ female system, the raw 妯亇 妯亇 θ 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜 夜The liquid crystal display corresponds to an emissive liquid crystal display which controls the light transmittance through the eccentricity of the day through the refracting, so that the image is displayed on the screen. In order to display the desired image on the liquid crystal display, a backlight unit is used, and the light of the backlight passes through the liquid crystal layer. Therefore, the liquid crystal display H includes a liquid crystal panel and a backlight unit disposed at the rear of the liquid crystal panel. Thus, the backlight unit 7L emits light having a lack of luminosity to the liquid crystal panel. That is to say, "Brothers" because of the moonlight, even in a relatively bright environment, the light of constant illuminance is emitted. In fact, the backlight unit uses a larger percentage of I month to measure more than 4 tongues, and about 80% or more of the total energy drives the liquid crystal display 1352250*#. In order to manufacture a low energy consumption type liquid crystal display, different methods are used to reduce the energy consumption of the backlight unit. One of the different ways of reducing the energy consumption of the backlight unit is to provide a liquid crystal display that has a light sensor that senses the luminosity from ambient light from the surroundings. Please refer to "FIG. 1", a liquid crystal display having a light sensor capable of sensing the luminosity of the external light from the surroundings, comprising a liquid crystal panel 150, which is provided with a top substrate 110. a base substrate 120 and a liquid crystal layer 130 disposed between the top and bottom substrates 110 and 120. The backlight unit 200 is disposed on the base substrate 12 and emits light to the liquid crystal panel 150. The liquid crystal panel 15 defines a display area for displaying an image; a non-display area for not displaying an image; and a black matrix area disposed between the display area and the non-display area for blocking light. The top substrate 110 corresponds to a color filter substrate. At the same time, the red (r) green (G) and blue (R) filters are formed in the pixel region of the top substrate no, and the Lulu and black matrix films 105 are formed on the black matrix region of the top substrate 11 in. Although not disclosed in detail in the drawings, the black matrix film 105 is disposed in the boundary of the halogen (not shown), thereby preventing light leakage. The color filter 101 is a resin layer containing a dye or a pigment. Further, a coating layer (not shown) may be formed to planarize the surface of the color filter 101. A common electrode 103 is disposed on the coating layer for applying a voltage to the liquid crystal layer 130. The base substrate 120 is provided with a plurality of gates and data lines 125 and 127. The plurality of 1352250 closed electrodes and the data lines 125*127 are mosquito-like subtractive elements. Further, a switching device for switching the respective elements is disposed at each of the gates and the data lines 125 and 127. For example, the switching device is formed by a thin film transistor 121 having a gate, a semiconductor layer, and a plurality of source and gate electrodes. ;, /; / moxibustion pad 125a is disposed on one side of each gate line 125, and a data pad 127 & with ° and one side of each data line 127, wherein the gate and data pad 1 Each gate of the tooth and the data lines 125 and 127 exert a force σ signal. Each of the halogen elements is provided with an indole 123, wherein the halogen electrode I23 of the base substrate 120 faces the common electrode 103 of the top substrate 110. The common electrode 1〇3 and the halogen electrode 123 are formed of a transparent conductive material suitable for emitting light to the backlight unit 2〇〇. Moreover, the photo sensor 140 is formed in the black matrix region of the base substrate 120 to sense the luminosity of the external light and control the brightness of the backlight. In order to expose the photo sensor 140 to the outer ring portion, the corresponding portion of the black wiper of the top substrate 10 is removed. Referring to "Fig. 2", if the corresponding portion of the black matrix film 1〇5 is removed from the black matrix region of the top substrate 11〇, the photosensor Μ〇 of the base substrate is exposed to the outside. At the same time, the photo sensor 14 is simultaneously formed when the thin film transistor 121 is formed. Fig. 3 is a cross-sectional view showing a thin film transistor and a photo sensor included in a conventional liquid crystal display. Referring to FIG. 3, a base substrate 12A includes a thin film transistor region having a channel of a 离子-type ion implantation region, and a thin film transistor region (11) having an n-type ion. a channel that breaks into the area; and a light sensor area. 1352250 Referring again to FIG. 3, a p-type semiconductor layer 163, an n-type semiconductor layer 164, and an n-type and p-type semiconductor layer 165 are formed at a fixed interval on the base substrate 120 having a buffer layer 162. on. Then, a gate insulating film 166 is formed on the p-type semiconductor layer 163, the n-type semiconductor layer 164, and the n-type and p-type semiconductor layers 165. Further, a gate 168 is formed over the gate insulating film 166 on the germanium-type semiconductor layer 163 and the 11-type semiconductor layer 164. * Also, an insulating interlayer Π0 is formed on the gate 168, and the insulating interlayer 17 ♦ φ has a contact hole for exposing the semiconductor layer. Then, the source and the gate m are formed on the insulating interlayer Π0, wherein the source and the secret m are respectively connected to the p-type semiconductor layer 163, the n-type semiconductor layer 164, and the n-type and p-type semiconductor layers through the contact holes. To expose this semiconductor layer. The n-type semiconductor layer 164 is formed such that the region where the magnetic pole and the secret 172 are in contact is disposed - the Π + type ion implantation region 164a, and the region in contact with the gate insulating film 166 is provided with - ion non-implantation The area is secret, and the area between them is provided with a η-type lightly doped drain (L_y_Dc) ped_Drain, LDD) layer 16 known. - (d) The formation of the half-money layer 163 does not have a solution (LDD) layer - and its formation should be such that the area in contact with the source and the dipole 172 is provided - the p-type ion implantation region brain and the gate An area where the pole insulating film 166 is in contact is provided with an ion non-implantation region +163b. The formation of the semi-conducting layer 165 in the middle and the P should be such that it is in contact with the source and the poleless π with the -n+ type and p-type ion implantation area, 1352250 = and it is insulated from the gate The region where the film 166 is in contact is provided with an ion implantation region 165c, and the surface is implanted into a lightly doped (LDD) layer during the ion implantation process, through the use of the .. gate without using the optical impedance side case. The mask forms an n-type lightly doped drain (LDD) layer 164e of the n-type semiconductor layer 164, wherein the interpole is formed on the gate amp & rim film as an ion implant. However, this is difficult to be the same as the light impedance mask, and the luxuries that form the LDD layer are formed in the light sensor area (10). Therefore, the n-type ions are doped in the ion implantation region 16 between the n+ type ion implantation region (10) and the P type ion implantation region 165b. In the case of the photo sensor region (ΠΙ), if the ion implantation region is formed in the n+ type ion implantation region 165a and the p-type ion implantation region, it is difficult to check the photosensor according to the intensity of the external light. The current intensity in the area. In other words, if the external light becomes stronger, the strength of the electric 々 IL flowing through the source and the immersion is increased, that is, the n+ type and the p-type ion implantation region are increased, and the current intensity is increased. At the same time, if the external light becomes weak, the current intensity flowing through the source and the drain is reduced. Therefore, it is possible to check the current intensity in this photosensor area based on the intensity of the external light. However, since the ion implantation region 165c formed between the n+ type ion implantation region 165a and the p-type ion implantation region 165b affects the current intensity flowing through the p-type and n+-type ion implantation regions, the light sensing of the prior art is known. The area of the device cannot be checked for the intensity of the current according to the intensity of the external light, so that the sensing efficiency of the photosensor area becomes worse. In other words, as shown in Figure 4, the polar and source voltages Vds and the immersed current of the optical sensor region of the prior art exhibit nonlinear characteristics, so it is difficult to accurately according to the intensity of external light. Check the difference in external current. SUMMARY OF THE INVENTION In view of the above problems, the main object of the present invention is to provide a liquid crystal display 11 having a photosensor and a method of manufacturing the same, which can be charged (4) in addition to the limitations and disadvantages of the prior art 1 One or more questions. One of the objects of the present invention is to provide a liquid crystal display having a photosensor for improving sensing efficiency and a method of fabricating the same. Other advantages, objects, and features of the present invention will be set forth in part in the following <RTIgt; </ RTI> <RTIgt; and</RTI> Other Advantages of the Invention. The objects and features of the present invention will be apparent to those of ordinary skill in the art Partial understanding of the two can be achieved. The object and other advantages of the present invention can be achieved and obtained through the book (b) and the f. In order to obtain the above-mentioned objects and other advantages, the present invention makes a specific::::, a liquid crystal panel of a liquid crystal display having a photosensor of the present invention, the liquid crystal panel having the same a substrate and a second substrate disposed between the f substrate and the second substrate, and a light sensing layer is formed on the second substrate for sensing external light from the surroundings. The detector comprises a semiconductor layer formed on the second substrate, and Wei Shangli 2250 is provided with an n+ type ion implantation region, an ion non-implantation region and a lightly doped region; an insulating film is formed in the second layer On the substrate, the semiconductor layer is covered; a passivation film is formed on the second substrate to cover the insulating film; a first contact hole is passed through the insulating film and the passivation film for Exposing the source and drain regions of the semiconductor layer; the source and the drain are connected to the source and drain regions of the semiconductor layer through the first contact hole; and an ion implantation preventing film is formed on the insulating film Ion and ion non-implantation area Yi, and a second contact hole through the passivation film-based non-ion implantation on the ion implanted region • Lu preventing film, in order to provide light to the outside of the ion non-implanted region. In another aspect, a liquid crystal display device with a photosensor includes a liquid crystal panel having a first substrate and a second substrate bonded to each other, and a liquid crystal layer disposed between the first substrate and the second substrate. And a photo sensor is formed on the second substrate for sensing an external light, wherein the photo sensor comprises a semiconductor layer formed on the second substrate and equipped with an n+ type ion implant Into the region, the ion non-implanted region and the lightly doped region; an insulating film is formed on the second base metal plate to cover the semiconductor layer; the first and second auxiliary patterns are adjacent thereto a semiconductor layer formed on the insulating film; a purification film formed on the second substrate, • for covering the first and second auxiliary patterns and the insulating film; a first contact hole passing through the ship _ secretly, 帛 此 此 此 此 此 此 半导体 此 半导体 半导体 半导体 半导体 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此And the second auxiliary pattern overlap; the first The second auxiliary capacitor is formed between the miscellaneous and the bungee and the first and second lion patterns 12 1352250: in the part of ε; the ion implanting anti-butter is formed on the insulating film and The 匕 ion non-implantation domain overlaps; and a second contact hole passes through the source and the immersion of the blunt 4 membrane 匕 ion non-implanted region, and prevents the narration by removing the ion implant Or all of the thin portions are formed to provide this external light to the ion non-implantation area. • (d) The central portion of the 'ion implant preventing film is removed during the formation of the second contact hole. # •φ This dimension implantation prevents the film portion from being removed, so that when the second contact hole is formed, the ion implantation preventing film remains only at the bottom edge of one of the second contact holes corresponding to the n + -type ion implantation region. The sub-implantation preventing film and the source and the electrode are formed of the same material. On the other hand, the manufacturing method of the liquid crystal display with the photo sensor of the present invention comprises the following steps: preparing - having - color crossing light The first layer of the layer - the base; a second substrate having a thin film transistor and a photosensor region; and forming a liquid layer between the first and second substrates, wherein preparing the second substrate comprises the following steps: forming a buffer layer thereon Forming a plurality of semiconductor layers on the buffer layer of the thin film transistor and the photo sensing n region; forming an insulating film on the second substrate to cover the semiconductor layer; forming a On the insulating film of the thin film transistor region, the gate overlaps the plurality of semiconductor layers, and an ion implantation preventing film is formed on the insulating film of the photosensor region; forming an η+ type and a Ρ type ion implant 13 250 250 in the area to: >, one of the semiconductor layers of the thin film transistor region, and through the use of gate and ion implantation preventing film simultaneously form n + type and p type Xu Zhi people area to a non-implanted region and a lightly doped region of the semiconductor layer t of the photosensor region; forming a -purifying film on the entire surface of the second substrate; forming a first contact hole to expose the film Semiconductor layer in a transistor The source and drain
極區域及光感測HI!域巾之半導體層之源極及祕區域，並且透 過暴露此離子植續賴或絲此離子植人社膜之—些或整個 部份’而形成穿過此域·區域之離子非植人區域上之鈍化模 之一第二接觀；以及形成—金屬膜於具有此第-接觸孔及第二 接觸孔之此第二基板上，並邱時形成通過此第—接觸孔與此薄 膜電晶體之半導體層相連接之源極及祕，以及通過此第一接觸 孔與此光制ϋ區域之半導體層相連接之源極及祕圖案。 此外此方法包含形成第一及第二輔助圖案與相鄰於此光感 測器區域之半導體層之絕緣膜上，並且與源極及祕相重疊。 #同時，此離子植入防止膜在形成此第二接觸孔之過程中被完 全去除。 而且，此離子植入防止膜在形成此第二接觸孔之過程中配 設，並且在軸祕及祕圖案之触巾被完全絲。 而且此離子植入防止膜之中心部份在形成此第二接觸孔之 過程中被去除。 而且’此離子植人防止職部份絲，以財形成此第二接 1352250 觸孔時此離子狀防止難保留於賴於此呵離子植入區域的 此第二接觸孔之一底邊緣。 而且此離子植入防止膜與源極及閘極由同一種材料形成。 可以理解的是，如上所述的本發明之概括朗和隨後所述的 本發明之詳細均是具有代表性和解釋性的說明，並且是為了 進一步揭示本發明之申請專利範圍。 【實施方式】 以下，將結合圖式部份對本發明的較佳實施方式作詳細說 明。其中在這㈣式部份帽使㈣_的參考標號代表相同或 同類部件。 以下，將結合圖式部份描述本發明之具有一光感測器的液晶 _示器。The polar region and the light sensing HI! The source and the secret region of the semiconductor layer of the tissue, and through the exposure of the ion implant or the silk or the entire part of the ion implanted into the domain a second passivation mode on the ionic non-implanted region of the region; and forming a metal film on the second substrate having the first contact hole and the second contact hole, and forming a pass through the second a source and a secret connection between the contact hole and the semiconductor layer of the thin film transistor, and a source and a secret pattern connected to the semiconductor layer of the photolithography region through the first contact hole. Further, the method includes forming the first and second auxiliary patterns on the insulating film adjacent to the semiconductor layer of the photosensor region, and overlapping the source and the secret phase. # Meanwhile, this ion implantation preventing film is completely removed in the process of forming this second contact hole. Moreover, this ion implantation preventing film is disposed in the process of forming the second contact hole, and the contact lens in the axis and the secret pattern is completely silk. Further, the central portion of the ion implantation preventing film is removed in the process of forming the second contact hole. Moreover, the ion implant prevents the part of the wire from forming a second contact with the 1352250 contact hole, and the ionic shape is prevented from remaining at the bottom edge of one of the second contact holes of the ion implantation region. Moreover, the ion implantation preventing film is formed of the same material as the source and the gate. It is to be understood that the appended claims are intended to be illustrative and illustrative [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail in conjunction with the drawings. Wherein the (4) part of the cap makes the reference number of (4)_ represent the same or similar parts. Hereinafter, a liquid crystal display device having a photosensor of the present invention will be described with reference to the drawings.
盘 第5圖」係為本發明第一實施例之具有一光感測器的液晶 _示器之一光感測器區域及一薄膜電晶體區域之橫截面圖。 «月蒼閱第5圖」’ 一基板3〇〇定義有一第一薄膜電晶體區域 ⑴其具有-p型離子植入區域之通道；一第二薄膜電晶體區域 (II) 其具有一 η型離子植入區域之通道；以及一光感測器區域 (III) 〇 第一薄膜電晶體區域（I)包含有一 ρ型半導體層，此ρ型半 導體層於一緩衝層如2上配設有兩個ρ型離子植入區域312a，以 及—形成於此兩個p型離子植入區域312a間之離子非植入區域； 15 -閘極絕緣膜306，其形成於具有此p型半導體層之基板，上； 間極308a，其形成於此離子非植入區域上之問極絕緣膜遍上; -鈍化膜320，其形成於具有此閘極规a之基板3⑻之整個表面 上；以及源極及祕324 ’其通過一第一接觸孔迎與p型離子 植入區域312a相連接。 第5圖」所示之第_編電晶·域⑴僅配設有p型離 子植入區域。然而，第— 春_子植入區域。 薄膜電晶體區域（I)也可配設有η型離 第二薄膜電晶體區域⑻包含有-η型半導體層，此η型半 導體層於緩衝層302上配設有兩個η型離子植入區域施、一形 成於此兩個η型離子植人區域施間之離子非植人區域、以及一 形成於此η型料植人區域31&與_子雜人區_之一輕推 雜;及極（LDD)層318a ;此難絕緣膜3Q6，係形成於具有n型 半導體層的基板300上；一閘極屬，係形成於離子非植入區域 鲁上之閘極絕緣膜3〇6上；此鈍化膜MO，係配設於具有問極遍 的基板300之整個表面上；以及此源極及没極似，係通過此第一 接觸孔322a與n型離子植入區域31如相連接。 第5圖」所示之第二薄膜電晶體區域（II)僅配設有η型離 子植區$ ,然而，第二薄膜電晶體區域（II)也可配設有ρ型離 子植入區域。 光感測Θ區域（m)包含有_半導體層，此半導體層於缓衝 16 1352250 層302上配設有p型及n型離子植入區域迎及鳩、一形成於 此P型及η型離子植入區域312b及鳩間之離子非植入區域 • 319以及$成於η型離子植入區域;316b及離子非植入區域 :間之輕雜祕（LDD)層现；此閘極絕賴306，係形成於 具有此半導體層之基板300上；此純化膜32〇，係形成於此閘極絕 • 緣膜306之上，一第二接觸孔322b，係透過去除此離子非植入區 - 域319上之此純化膜320而形成；以及源極及汲極324，係通過此 鲁鲁第二接觸孔322b與p型及η型離子植入區域312b及316b相連接。 第5圖」所示之光感測器區域（in)配設有具有不同類型 的η型及p型區域。然而，光感測器區域（ΠΙ)也可配設有同一 類型之離子植入區域。 如果此離子非植入區域319形成於光感測器區域（ΠΙ)中， 可能根據來自周圍之外部光線之強度檢查此光感測器中之電流強 度。Fig. 5 is a cross-sectional view showing a photosensor region and a thin film transistor region of a liquid crystal display device having a photosensor according to a first embodiment of the present invention. «月苍苍第5图"' A substrate 3〇〇 defines a first thin film transistor region (1) having a channel of a -p type ion implantation region; and a second thin film transistor region (II) having an n-type a channel of the ion implantation region; and a photo sensor region (III) 〇 the first thin film transistor region (I) comprises a p-type semiconductor layer, and the p-type semiconductor layer is provided with two on a buffer layer such as 2 a p-type ion implantation region 312a, and an ion non-implantation region formed between the two p-type ion implantation regions 312a; 15 - a gate insulating film 306 formed on the substrate having the p-type semiconductor layer , an upper electrode 308a formed on the ion insulating film over the ion non-implanted region; a passivation film 320 formed on the entire surface of the substrate 3 (8) having the gate gauge a; and a source And the secret 324' is connected to the p-type ion implantation region 312a through a first contact hole. The p-type ion crystal field (1) shown in Fig. 5 is only provided with a p-type ion implantation region. However, the first - spring _ sub-implantation area. The thin film transistor region (I) may also be provided with an n-type second thin film transistor region (8) including a -n type semiconductor layer, and the n-type semiconductor layer is provided with two n-type ion implantations on the buffer layer 302. a region non-implanted region formed between the two n-type ion implanted regions, and one of the n-type implanted regions 31 & And a (LDD) layer 318a; the hard insulating film 3Q6 is formed on the substrate 300 having the n-type semiconductor layer; and a gate is formed by the gate insulating film 3〇6 formed on the ion non-implant region The passivation film MO is disposed on the entire surface of the substrate 300 having the poles; and the source and the electrode are not substantially similar through the first contact hole 322a and the n-type ion implantation region 31. connection. The second thin film transistor region (II) shown in Fig. 5 is only provided with the n-type ion implantation region $, however, the second thin film transistor region (II) may also be provided with a p-type ion implantation region. The photo-sensing germanium region (m) includes a semiconductor layer which is provided with a p-type and n-type ion implantation region on the buffer layer 16 1352250 layer 302, and is formed in the P-type and the n-type. Ion implantation region 312b and inter-ion ion non-implantation region • 319 and $ in the n-type ion implantation region; 316b and ion non-implantation region: the light and secret (LDD) layer is present; this gate is extremely good 306, formed on the substrate 300 having the semiconductor layer; the purified film 32 is formed on the gate insulating film 306, and a second contact hole 322b is used to remove the ion non-implant region. - The purified film 320 on the domain 319 is formed; and the source and drain electrodes 324 are connected to the p-type and n-type ion implantation regions 312b and 316b through the Lulu second contact hole 322b. The photo sensor area (in) shown in Fig. 5 is provided with different types of n-type and p-type areas. However, the photosensor area (ΠΙ) can also be equipped with the same type of ion implantation area. If the ion non-implantation region 319 is formed in the photosensor region (ΠΙ), the intensity of the current in the photosensor may be checked based on the intensity of external light from the surroundings.
以與習知技術相同之方式，光感測器區域（III)可形成於與 黑矩陣相重疊之區域中。進一步而言，光感測器區域（III)可 形成於一液晶面板中之顯示區域之晝素或相鄰於此顯示區域之非 顯示區域中此種情況下，於此光感測器區域下配設一蔽光層（圖 未示）較佳’由此防止自一背光單元發射出之光線傳送於此光感 測器。 「第6Α圖」至「第6F圖」係為本發明第一實施例之具有一 17 1352250 瞧 》 光感測器之液晶顯示器製造方法之橫截面圖。 。月參閱「第6A圖」至「第6F圖」’以下將接述本發明第一實 . 施例之具有一光感測器之液晶顯示器之製造方法。 首先，請參閱「第6A圖」，緩衝層302形成於基板3〇〇上。 緩衝層302通常由一無機絕緣膜形成，例如氮化石夕（_χ)或石夕 氧化物（SiOx)。 • 然後，半導體層3〇4a、304b及304c分別形成於第一薄膜電 • φ曰日曰體區域（I)、第二薄膜電晶體區域（11)、以及光感測器區域⑽ 中。 更詳細而言，透過一電漿加強化學蒸氣澱積（pECVD)或噴 鍵法，-無定形石夕層形成於基板3〇〇之整個表面上。隨後，執行 -脫氫過程’即’大約攝氏度之加熱過程，以防止隨後的結 曰曰過私之效率降低，此結晶過程之效率降低由於混合於此無定形 销巾之動Hi起。透過此脫氫過程，去除無定卿層中之氯。 籲去除氫的此無定财層透過—雷射而結晶，由此形成一多晶石夕 膜纟後光阻抗姓圖案形成於此多晶石夕膜上，並且然後透過 •光刻形成圖案，因此形成此半導體層。然後，透過作為一侧遮 .罩使用此光阻抗钱圖案钱刻此多晶石夕膜，由此，分別在此第一薄 ，電晶體區域⑴、此第二薄膜電晶體區域（11)、以及此光感測 器區域（ΠΙ)中形成此半導體層304a、304b及304c。 ω麦祕'%緣膜306形成具有此半導體層3〇4a、3〇4fc^3〇4c 18 (S > 1352250 • 之基板300上。此閘極絕緣膜306由無機材料所形成，例如二氧 化矽（Si02 )。 然後，閘極308a及308b及一離子植入防止膜308c分別形成 於各半導體層304a、304b及304c之中心部份上之閘極絕緣膜3〇6 '上。 - 為了形成閘極308a及308b及一離子植入防止膜308c，銘 . (A1)、銅（Cu)、翻（Mo)、鈦（Ti)、鉻（Cr)、組（Ta)、銘合 ®鲁金、銅合金、鉬合金、鶴（W)任何之一形成於此閘極絕緣膜 之上’並且然後透過光刻形成圖案。 请參閱「第6B圖」’透過光刻形成一第一光阻抗姓圖案31〇， 以暴露第一薄膜電晶體區域（I)及第二薄膜電晶體區域（π)之 些部伤。如果使用此第一光阻抗姓圖案31〇作為一離子植入遮 罩而植入ρ型離子，則ρ型離子植入區域312a及312b分別形成 於此第一薄膜電晶體區域之半導體層3〇4a及此光感測器區域之半 ®鲁導體層304c中。 . 第一薄膜電晶體區域（1)之P型離子植入區域312a變為p 型薄膜電晶體之源極及波極區域。而且，此光感測器區域之p型 離子植入區域312b變為源極及汲極區域。然後，用以定義p型離 子楂入區域的此第一光阻抗餘圖案31〇透過揭膜而去除。 請參閱「第6C圖」，一第二光阻抗蝕圖案314形成於具有ρ 型離子植入區域312a及312b的此基板300上，並且然後透過光 19 丄 刻形成圖案’以暴露此第二薄膜電晶體區域（ιι)及此光感測器區 域（III)之-些部份。然後，在使用第二光阻抗侧案別作為 • 離子植人鮮的㈣下植人高雜的n+麵子，由此n型離子 植入區域316a及3脱分別形成於第二薄膜電晶體區域（ϋ)之半 導體層3〇4b及此光感測器區域（ΙΠ)之半導體層騰上。 . 帛二薄膜電晶體區域（11)之n型離子植入區域遍變為了 .η型薄臈電晶體之源極及沒極區域。而且，光感測器區域㈣之 ♦ · η傭子植入區域316b變為了源極及祕區域。接下來，透過揭 膜去除第二光阻抗蝕圖案314。_ η月參閱第6D圖」’輕微摻雜的卜型離子植入於此基板· 之整個表面中’因此形成了輕摻雜沒極層皿及働 分別於第二薄膜電晶體區域（11)之半_麟及此光感測器 區域（III)之半導體層304c中。 當形成輕摻細亟（LDD)層施及鳩時，問極遍及 ••離子植入防止膜施用作離子植入遮罩。特定地，當形成此_ 離子植入區域施及316b時，輕微摻雜的n•型離子較之高度推 雜的n+型離子使用的更多。 . _ ’ η·_子輕娜雜於此絲3⑻之整録面上。實際 上’此摻雜顧形成於未植人有料的半導體層中。也就是說， 此摻雜層不形成於植入有ρ型離子的ρ型離子植入區域仙及 312b中，以及植人有.n型離子的n型離子植人區域恤及3· 20In the same manner as the conventional technique, the photo sensor region (III) can be formed in a region overlapping the black matrix. Further, the photo sensor region (III) may be formed in a display region of a liquid crystal panel or in a non-display region adjacent to the display region, in which case, under the photosensor region It is preferable to provide a light shielding layer (not shown) to thereby prevent light emitted from a backlight unit from being transmitted to the photo sensor. The "Fig. 6" to "6F" are cross-sectional views showing a method of manufacturing a liquid crystal display having a 17 1352250 光 ” light sensor according to the first embodiment of the present invention. . Referring to "6A" to "6F", the method of manufacturing a liquid crystal display having a photosensor according to the first embodiment of the present invention will be described below. First, referring to "FIG. 6A", the buffer layer 302 is formed on the substrate 3A. The buffer layer 302 is usually formed of an inorganic insulating film such as nitridite or SiOx. • Then, semiconductor layers 3〇4a, 304b, and 304c are formed in the first thin film dielectric region (I), the second thin film transistor region (11), and the photo sensor region (10), respectively. More specifically, the amorphous amorphous layer is formed on the entire surface of the substrate 3 by a plasma enhanced chemical vapor deposition (pECVD) or a spray bonding method. Subsequently, a -dehydrogenation process is performed, i.e., a heating process of about a degree Celsius to prevent a subsequent decrease in the efficiency of the smear, and the efficiency of the crystallization process is lowered by the movement of the amorphous pin. Through the dehydrogenation process, the chlorine in the amorphous layer is removed. The amorphous layer that removes hydrogen is crystallized through laser-forming, thereby forming a polycrystalline stone film, and a pattern of photo-resistance is formed on the polycrystalline film, and then patterned by photolithography. Thus, this semiconductor layer is formed. Then, the polycrystalline film is engraved by using the optical impedance money pattern as a side cover, whereby the first thin, transistor region (1), the second thin film transistor region (11), The semiconductor layers 304a, 304b, and 304c are formed in the photosensor region (ΠΙ). The ω Mai Mi '% edge film 306 is formed on the substrate 300 having the semiconductor layer 3〇4a, 3〇4fc^3〇4c 18 (S > 1352250 •. The gate insulating film 306 is formed of an inorganic material, for example, two Cerium oxide (SiO 2 ). Then, gate electrodes 308a and 308b and an ion implantation preventing film 308c are respectively formed on the gate insulating film 3〇6' on the central portion of each of the semiconductor layers 304a, 304b, and 304c. Forming gates 308a and 308b and an ion implantation preventing film 308c, Ming. (A1), copper (Cu), turning (Mo), titanium (Ti), chromium (Cr), group (Ta), Minghe® Lu Any one of gold, copper alloy, molybdenum alloy, and crane (W) is formed on the gate insulating film' and then patterned by photolithography. Please refer to "Section 6B" to form a first optical impedance by photolithography. The last name pattern 31〇 is to expose some of the first thin film transistor region (I) and the second thin film transistor region (π). If the first optical impedance last name pattern 31 is used as an ion implantation mask When the p-type ions are implanted, the p-type ion implantation regions 312a and 312b are respectively formed on the semiconductor layer 3〇4a of the first thin film transistor region and The half of the photosensor region is in the Lu conductor layer 304c. The P-type ion implantation region 312a of the first thin film transistor region (1) becomes the source and the wave region of the p-type thin film transistor. The p-type ion implantation region 312b of the photo sensor region becomes a source and drain region. Then, the first photo-resistance remaining pattern 31 for defining the p-type ion implantation region is removed by removing the film. Referring to FIG. 6C, a second photoresist pattern 314 is formed on the substrate 300 having the p-type ion implantation regions 312a and 312b, and then patterned by light 19 to expose the second thin film. The crystal region (ι) and some parts of the photosensor region (III). Then, using the second optical impedance side case as the ion implanted (four) implanted high-noise n+ face, The n-type ion implantation regions 316a and 3 are respectively formed on the semiconductor layer 3〇4b of the second thin film transistor region and the semiconductor layer of the photosensor region (ΙΠ). The n-type ion implantation region of the crystal region (11) is transformed into a n-type thin germanium transistor. The pole and the immersed region. Moreover, the Δ servant implant region 316b of the photo sensor region (4) becomes the source and the secret region. Next, the second photoresist pattern 314 is removed through the film. _ η月Referring to Figure 6D, "Slightly doped ion implants are implanted into the entire surface of the substrate." Thus, a lightly doped gate plate and a tantalum are formed in the second thin film transistor region (11). Lin and the semiconductor layer 304c of the photosensor region (III). When forming a light-doped fine-grained (LDD) layer to apply germanium, the ion implantation prevention film is applied as an ion implantation mask. Specifically, when the _ ion implantation region is formed to apply 316b, the lightly doped n• type ions are used more than the highly doped n+ type ions. _ ’ η·_子轻娜 is mixed with the entire recording surface of this silk 3 (8). In fact, this doping is formed in a semiconductor layer that is not implanted. That is to say, the doped layer is not formed in the p-type ion implantation region sin and 312b implanted with p-type ions, and the n-type ion implanted regional shirt with implanted n-type ions and 3.20
c S 1352250 中ο 當植入離子以形成此光感測器區域（ΠΙ)中之輕摻雜汲極 (LDD)層318b時’由於離子植入防止膜308c，離子非植入區域 319形成於半導體層304c中。 由於離子非植入區域319形成於此光感測器區域中， 因此^^之習知技術可能提高此光感測器區域（III)中之光感測效 •率。也就是說，習知技術之具獅子獻區_光感·根據光 籲鲁線之強度提供了電流間之微弱差別。同時，本發明之具有離子非 植入區域319的光感測器能根據光線之強度提供電流間之清晰差 別。 清參閱「第6E圖」，其後，形成鈍化膜32〇且然後純化膜⑽ 形成圖案，用以同時形成第一及第二接觸孔322a&322b。此時， 第-接觸孔 電晶域（11)中之P_子植人區域312ah型離子植入區 • •域3恤所形成的源極及及極區域之半導體層。而且，第二接觸孔 322b暴露了光感測器區域⑽中之p型離子植入區域3i2bh 型離子植入區域316b所形成的源極及沒極區域之半_層。透過 .—_劑去除此域測(m)之軒植續賴紙，用 以當形成第二接觸孔322b時-起去除此純化膜32〇及閘極材料。 此時，第二接觸孔322b可形成於將電路區域（圖未示）之間極斑 源極及没極相電性連接之部份中。然而，由於包含於此電路區域 21 1352250 中之接觸孔（圖未示）較之包含於此光感測器區域㈤）中之第 -接觸孔322b尺寸上為小’因此，當形成此第二接觸孔時沒有去 除包含於此電路區域中之閘極（圖未示）。 睛參閱「第6F圖」，一金屬膜澱積於具有此第一及第二接觸 孔322a及322b之基板300之整個表面上，並且然後形成圖案以 形成與離子植入區域312a、施、鳩及鳩所形成的源極及 汲極區域相接觸之源極及汲極324，由此完成了此過程。 • · 縣發明第一實施例之光感測器中，流過此光感測器之p型 及n+型離子植入區域的電流強度隨著外部光線強度的增加而增 強。而且’請參閱「第7圖」，隨著外部光線強度的降低，流過此 源極及汲極的電流強度也減弱。結果，光感·之電流強度根據 外部光線之強度顯示出—線性’因此提高了域測效率。 在本發明之第一實施例中，在形成接觸孔之過程中去除此離 子植入防止膜3〇8c。以下揭露了本發明第二實施例之具有—光感 ♦ #測器的液晶顯示器之製造方法，其中在形成源極及及極之過程中 去除此離子植入防止膜308c。 「第8A圖」至「第8C圖」係為本發明第二實施例之具有— ‘ 光感測器的液晶顯示器之製造方法之橫截面圖。 首先，輕摻雜汲極（LDD)層318a及318b按照本發明第一 λ軛例之「第6八圖」至「第6D圖」中所揭露之步驟形成。 隨後，請參閱「第8A圖」’—鈍化瞑32〇形成於具有輕務雜 22 1352250 ' · 及極（LDD)層318a及318b的基板300之整個表面上.，並且然 後形成圖案’因此同時形成了第一及第二接觸孔322&及322(^此 時’第一接觸孔322a暴露了分別在第一及第二薄膜電晶體區域(I) 及（II)中之離子植入區域312a及316a所形成之源極及汲極區域 之半導體層。而且，此第二接觸礼322c暴露了一光感測器區域(m) 之一離子植入防止膜308c。 6青參閱「第8B圖」，一金屬膜323形成於具有第一及第二接 __觸孔322a及322c之基板300之整個表面上，然後，一用於源極 及汲極的光阻抗蝕圖案340形成於此金屬膜323上。此時，此金 屬膜由與一閘極同樣之材料形成較佳。 π蒼閱「第8C圖」，透過使用用於源極及汲極的光阻抗蝕圖 案340作為一遮罩形成此金屬膜323之圖案，由此形成了與各區 域（I) (II)及（III)中之離子植入區域及 所形成的源極及沒極區域相接觸之源極及汲極324。此時，金屬膜 ·· 3及離子植入防止膜3收在光感測器區域（η)中同時开)成圖 案’由此形成此第二接觸孔322c。 树明第二實施例之域㈣具有與本發明第-實施例之光 感測器同樣之效率。 本發明之第-及第二較佳實施觸露出離子植人防止膜猶C 被完全去除。以下揭露了本發·三實酬之具有—紐測器的 液曰曰,4不。。之衣k方法，其中僅離子植入防止膜3·之中心區域c S 1352250 ο When ions are implanted to form the lightly doped drain (LDD) layer 318b in the photosensor region (ΠΙ), the ion non-implant region 319 is formed due to the ion implantation preventing film 308c In the semiconductor layer 304c. Since the ion non-implantation region 319 is formed in this photosensor region, conventional techniques of the photosensor region (III) may increase the photo sensing efficiency. That is to say, the lion contribution area of the conventional technology _ light sense provides a weak difference between the currents according to the intensity of the light ring. At the same time, the photosensor of the present invention having the ion non-implantation region 319 can provide a sharp difference in current according to the intensity of the light. Referring to "Fig. 6E", thereafter, a passivation film 32 is formed and then the purification film (10) is patterned to simultaneously form the first and second contact holes 322a & 322b. At this time, the P_sub-planted region 312ah-type ion implantation region in the first contact hole electro-crystal domain (11) • The semiconductor layer of the source and the polar region formed by the domain 3-shirt. Moreover, the second contact hole 322b exposes a half-layer of the source and the non-polar region formed by the p-type ion implantation region 3i2bh-type ion implantation region 316b in the photo sensor region (10). The substrate (m) is removed by the .--agent to remove the purified film 32 and the gate material when the second contact hole 322b is formed. At this time, the second contact hole 322b may be formed in a portion where the source region and the electrodeless electrode are electrically connected between the circuit regions (not shown). However, since the contact hole (not shown) included in the circuit region 21 1352250 is smaller in size than the first contact hole 322b included in the photo sensor region (5), when this second is formed The gate included in this circuit region is not removed when the contact hole is removed (not shown). Referring to "Fig. 6F", a metal film is deposited on the entire surface of the substrate 300 having the first and second contact holes 322a and 322b, and then patterned to form an ion implantation region 312a, shi, 鸠This process is accomplished by the source and drain electrodes 324 that are in contact with the source and drain regions formed by the germanium. • In the photosensor of the first embodiment of the invention, the current intensity of the p-type and n+-type ion implantation regions flowing through the photosensor increases as the intensity of the external light increases. Moreover, please refer to Figure 7. As the external light intensity decreases, the current flowing through the source and the drain also decreases. As a result, the current intensity of the light sense shows a linearity based on the intensity of the external light, thus improving the domain measurement efficiency. In the first embodiment of the invention, the ion implantation preventing film 3〇8c is removed in the process of forming the contact hole. Disclosed is a method of manufacturing a liquid crystal display having a photodetector according to a second embodiment of the present invention, wherein the ion implantation preventing film 308c is removed during formation of the source and the gate. "8A" to "8C" are cross-sectional views showing a method of manufacturing a liquid crystal display having a "photo sensor" according to a second embodiment of the present invention. First, the lightly doped drain (LDD) layers 318a and 318b are formed in accordance with the steps disclosed in "Section 6-8" to "6D" of the first λ yoke example of the present invention. Subsequently, please refer to "Fig. 8A" - the passivation layer 32 is formed on the entire surface of the substrate 300 having the light-duty 22 1352250 ' and the (LDD) layers 318a and 318b, and then forms a pattern' Forming first and second contact holes 322 & 322 (wherein the first contact hole 322a exposes the ion implantation region 312a in the first and second thin film transistor regions (I) and (II), respectively And a semiconductor layer of the source and drain regions formed by 316a. Moreover, the second contact 322c exposes one of the photosensor regions (m) to the ion implantation preventing film 308c. 6 Green refers to "8B" A metal film 323 is formed on the entire surface of the substrate 300 having the first and second contact holes 322a and 322c, and then a photoresist pattern 340 for the source and the drain is formed on the metal. On the film 323. At this time, the metal film is preferably made of the same material as a gate. π Cang "8C", by using the photoresist pattern 340 for the source and the drain as a mask Forming a pattern of the metal film 323, thereby forming a separation from each of the regions (I) (II) and (III) The implanted region and the formed source and the drain electrode are in contact with the source and the drain 324. At this time, the metal film··3 and the ion implantation preventing film 3 are received in the photosensor region (η) The opening pattern ′ thus forms the second contact hole 322c. The domain (4) of the second embodiment of the present invention has the same efficiency as the photosensor of the first embodiment of the present invention. The first and second preferred embodiments of the present invention expose the ion implant preventing film to be completely removed. The following discloses the liquid helium of the hair and the three real rewards, 4 no. . Clothing k method in which only ion implantation prevents the central region of the membrane 3
23 (S 1352250 被去除。 「第9A圖」至「第9C圖」係為本發明第三實施例之具有— . 光感測器的液晶顯示器之製造方法之橫截面圖。 首先，輕摻雜汲極（LDD)層318a及318b按照本發明第— 貫把例之「第6A圖」至「第6D圖」所揭露之步驟形成。 . 隨後，請參閱「第9A圖」’一鈍化膜320形成於具有輕摻雜 汲極（LDD)層31如及318b的基板300之整個表面上，並且然 • •後形成圖案，因此同時形成了第一及第二接觸孔322a& 322d。此 時，第-接觸孔322a暴露了分別在第一及第二薄膜電晶體區域⑴ 及（II)中之離子植入區域312a及316a所形成的源極及汲極區域 之半導體層。而且，此第二接觸孔322d透過僅去除光感測器區域 (III)中之中心區域而形成。此時，離子植入防止膜3〇紅保持於 第二接觸孔322d之底邊緣，由此防止破壞定位於此第二接觸孔 322d下之半導體層。 #· 換句話而言’如果按照本發明第一及第二實施例完全去除離 . 子植入防止膜，假如在形成此接觸孔的過程中蝕刻一閘極絕緣 膜，可破壞定位於此第二接解孔322d下之半導體層。然而，在本 • 發明第三實施例之域啦之情況下’軒植續賴3G8c保持 於第二接觸孔322d之兩個底邊緣，由此可能防止破壞定位於此第 二接觸孔322d下之半導體層。 然後’請參閱「第9B圖」，一金屬膜形成於具有此第一及第 24 1352250 二接觸孔322a及322d之基板300上，並且然後形成圖案’由此 形成與各區域（ι)、（Ιι)及（in)中之離子植入區域312a 3i6a、 312b及316b所形成的源極及汲極區域相接觸之源極及汲極π#， 由此完成了此過程。 ' 本發明第三實施例之光感測器具有與本發明第一實施例之光 感測器同樣之效率。 - 「第1〇A圖」及「第10B圖」係為本發明第四實施例之具有 春鲁一光感測器的液晶顯示器之製造方法之橫截面圖。 除了形成離子植入防止膜308c圖案之過程外，本發明第四實 施例之製造過程與本發明第三實施例之製造過程相同。 本發明第三實施例之揭露出當形成第二接觸孔322d時僅去除 離子植入防止膜308c之中心部份。請參閱「第1〇A圖」，在本發 明第四實施例之情況下，-鈍化膜320及一離子植入防止膜施 形成圖案，以便於對應於光感測器區域中之n型離子植入 • # ϋ域遞而將離子植入防止膜施保持於第二接觸孔伽之一 底邊緣。 .然後’請參閱「第10Β圖」，一金屬膜形成於具有此第一及第 -接觸孔322a及322d之基板300上’並且然後形成圖案，由此 形成與各區域（ι)、（π)及（m)中之離子植入區域312a、遍、 312b及；316b所形成之源極及汲極區域相接觸之源極及汲極， 由此完成了此過程。 25 <S ) 1352250 上述之較佳實施例揭露出光感測器配設有p型及η型兩種離 子植入區域。然而，可改變為僅配設有η型離子植入區域，或僅 . 配設有Ρ型離子植入區域。 在本發明上述貫施例之情況下，僅ρ型離子植入區域形成於 此第薄膜電晶體區域中。然而’ η型離子植入區域可形成於本發 . 明上述實施例之第一薄膜電晶體區域中。而且，第二薄膜電晶體 區域僅配°又有η型離子植入區域。然而，第二薄膜電晶體區域也 鲁鲁可配設有ρ型離子植入區域。 「第11圖」係為本發明第五實施例之具有一光感測器的液晶 顯示器中之光感測器及薄膜電晶體區域之橫截面圖。 除了本發明第五實施例之光感測器具有一浮動閘極構造外， 本發明第五實施例之光感測器與本發明第一實施例之光感測器之 構造相同。 詳細而言，本發明第五實施例之光感測器配設有第一及第二 鲁鲁辅助圖案309a及309b’第一及第二輔助圖案3〇9a及309b形成於 一閘極絕緣膜306上且與光感測器區.域（ΠΙ)中之源極及沒極324 相重疊。此時’第一及第二輔助圖案309a及309b形成了第一及 第二輔助電容器Cgs及Cgd。 第一及第二輔助圖案309a及309b與源極及汲極324相重疊， 源極及沒極324其間配設有一鈍化膜320 ’由此形成了第一及第二 輔助電容器Cgs及Cgd。因此’第一及第二辅助圖案3〇9a及309b 26 1352250. 防止閘極釋放之電壓被一源極及汲極間之寄生電容與汲極及閘極 間之寄生電容所改變。此時，第一及第二輔助電容器Cgs及c糾 之電容較之此寄生電容為大。 .· 本發明第五實施例之液晶顯示器配設有具有此浮動閘極結構 之光感測器，並且也配設有此第一及第二辅助電容器Cgs及cgd 4 以防止閘極釋放之電壓變化’由此提高了光感測器之感測效率。 而且，第五實施例之具有光感測器的液晶顯示器揭露出離子 鲁鲁非植入區域319形成於光感測器區域（m)中之半導體層中，以 致可能提高此光感測器之感測效率。 「第12A圖」至「第12F圖」係為本發明第五實施例之具有 一光感測器的液晶顯示器之製造方法之橫截面圖。 以下將參閱「第12A圖」至「第12F圖」描述本發明第五實 施例之具有一光感測器的液晶顯示器之製造方法。 百先，請參閱「第12A圖」，一緩衝層302形成於基板3〇〇 籲上。通常’缓衝層302由無機絕緣膜形成，例如氮化石夕（δίΝχ) 或魏化物（斷）。然後，半導體層3G4a、3G4b及3G4c分別形 .成於緩衝層302中之第一薄膜電晶體區域（I)、第二薄膜電晶體區 域（II)及光感測器區域（III)中。 其後，一閘極絕緣膜306形成於具有此半導體層3〇4a、304b 及304c之基板上。閘極絕緣膜3〇6纟一無機絕緣材料形成， 例如二氧化矽（Si02)。 27 1352250 然後，閘極308a及308b與離子植入防止膜3〇8c分別形成於 半導體層304a、304b及304c之中心部份上方之閘極絕緣膜3〇6 上。同時，第一及第二辅助圖案309a及309b相鄰於光感測器區 域（III)之半導體層304c形成於閘極絕緣膜306上。 為了形成閘極308a及308b、離子植入防止膜3〇8c及第一及 第二輔助圖案309a及309b，鋁（A1)、銅（〇〇、鉬（Mo)、鈦（Ti)、 鉻（Cr)、鈕（Ta)、鋁合金、銅合金、鉬合金、鎢（w)基金屬 籲籲任何之一形成於此閘極絕緣膜3〇6之上，並且然後透過光刻形成 圖案。 明參閱「第12B圖」至「第12F圖」，p型離子植入區域312a 及312b分別形成於第一薄膜電晶體區域⑴之半導體層綱&及 第二薄膜電晶體區域（II)之半導體層304c中。其後，n型離子 植入區域316a及316b分別形成於第二薄膜電晶體區域（π)之半 導體層304b及光感測器區域（ΠΙ)之半導體層3〇4c中。然後， 鲁籲輕摻雜沒極（LDD)層施及318b、第一及第二接觸孔迎及 322b以及源極及汲極324順次形成。「第12b圖」至「第12f圖」 .之各過程的解釋與「第6B圖」至「第6F圖」中各過程之詳細解 .釋相同。因此，「第12B圖」至「第⑽圖」之各過程的詳細解釋 將由「第6B圖」至「第6F圖」之各過程的解釋取代。 凊麥閱「第12F圖」’光感測器區域（冚）中之源極及汲極324 與第一及第二輔助圖案309a及30%相重疊。.23 (S1352250 is removed. "9A" to "9C" is a cross-sectional view of a method of manufacturing a liquid crystal display having a photosensor according to a third embodiment of the present invention. First, light doping The drain layer (LDD) layers 318a and 318b are formed in accordance with the steps disclosed in the "6A" to "6D" of the first embodiment of the present invention. Subsequently, please refer to "Fig. 9A" "a passivation film 320". Formed on the entire surface of the substrate 300 having the lightly doped drain (LDD) layers 31 such as and 318b, and then patterned, the first and second contact holes 322a & 322d are simultaneously formed. The first contact hole 322a exposes the semiconductor layers of the source and drain regions formed by the ion implantation regions 312a and 316a in the first and second thin film transistor regions (1) and (II), respectively. The contact hole 322d is formed by removing only the central region in the photo sensor region (III). At this time, the ion implantation preventing film 3 is kept in the bottom edge of the second contact hole 322d, thereby preventing the damage from being positioned there. The semiconductor layer under the second contact hole 322d. #· In other words, According to the first and second embodiments of the present invention, the ion implantation preventing film is completely removed, and if a gate insulating film is etched in the process of forming the contact hole, the semiconductor positioned under the second connection hole 322d can be broken. However, in the case of the third embodiment of the invention, 'Xuanzhi continued 3G8c to be held at the two bottom edges of the second contact hole 322d, thereby possibly preventing the damage from being positioned at the second contact hole 322d. Next, the semiconductor layer. Then, please refer to "FIG. 9B", a metal film is formed on the substrate 300 having the first and second 1352250 contact holes 322a and 322d, and then a pattern is formed, thereby forming regions and regions. The source and drain π# of the source and drain regions formed by the ion implantation regions 312a, 3i6a, 312b, and 316b in (1), (Ιι), and (in) complete the process. The optical sensor of the third embodiment of the present invention has the same efficiency as the photosensor of the first embodiment of the present invention. - "1A" and "10B" are the fourth embodiment of the present invention. Example of a liquid crystal display system with a Chunlu-light sensor Cross-sectional view of the method. The manufacturing process of the fourth embodiment of the present invention is the same as the manufacturing process of the third embodiment of the present invention except for the process of forming the pattern of the ion implantation preventing film 308c. When the second contact hole 322d is formed, only the central portion of the ion implantation preventing film 308c is removed. Please refer to "FIG. 1A", in the case of the fourth embodiment of the present invention, the passivation film 320 and an ion implantation The film is prevented from being patterned to facilitate the retention of the ion implantation preventing film at the bottom edge of the second contact hole corresponding to the n-type ion implantation in the photosensor region. Then, please refer to the "10th drawing", a metal film is formed on the substrate 300 having the first and first contact holes 322a and 322d' and then patterned to thereby form and regions (1), (π And the source and drain of the source and drain regions formed by the ion implantation regions 312a, 312b, and 316b in (m), thereby completing the process. 25 <S) 1352250 The preferred embodiment described above discloses that the photosensor is provided with both p-type and n-type ion implantation regions. However, it may be changed to be provided with only an n-type ion implantation region, or only a Ρ-type ion implantation region. In the case of the above-described embodiment of the present invention, only the p-type ion implantation region is formed in the first thin film transistor region. However, the n-type ion implantation region can be formed in the first thin film transistor region of the above embodiment. Moreover, the second thin film transistor region is only provided with an n-type ion implantation region. However, the second thin film transistor region is also provided with a p-type ion implantation region. Fig. 11 is a cross-sectional view showing a photosensor and a thin film transistor region in a liquid crystal display having a photosensor according to a fifth embodiment of the present invention. The photo sensor of the fifth embodiment of the present invention has the same configuration as that of the photosensor of the first embodiment of the present invention except that the photosensor of the fifth embodiment of the present invention has a floating gate structure. In detail, the photo sensor of the fifth embodiment of the present invention is provided with first and second Lulu auxiliary patterns 309a and 309b'. The first and second auxiliary patterns 3〇9a and 309b are formed on a gate insulating film. The source 306 and the dipole 324 in the photosensor region. At this time, the first and second auxiliary patterns 309a and 309b form the first and second auxiliary capacitors Cgs and Cgd. The first and second auxiliary patterns 309a and 309b overlap the source and the drain 324, and the source and the gate 324 are disposed with a passivation film 320' to thereby form the first and second auxiliary capacitors Cgs and Cgd. Therefore, the first and second auxiliary patterns 3〇9a and 309b 26 1352250. The voltage for preventing the gate from being released is changed by the parasitic capacitance between a source and a drain and the parasitic capacitance between the drain and the gate. At this time, the capacitances of the first and second auxiliary capacitors Cgs and c are larger than the parasitic capacitance. The liquid crystal display according to the fifth embodiment of the present invention is provided with a photo sensor having the floating gate structure, and is also provided with the first and second auxiliary capacitors Cgs and cgd 4 to prevent the voltage of the gate from being released. The change' thus improves the sensing efficiency of the photo sensor. Moreover, the liquid crystal display with the photo sensor of the fifth embodiment reveals that the ion Lulu non-implantation region 319 is formed in the semiconductor layer in the photo sensor region (m), so that it is possible to enhance the photosensor Sensing efficiency. The "12A" to "12F" are cross-sectional views showing a method of manufacturing a liquid crystal display having a photo sensor according to a fifth embodiment of the present invention. Hereinafter, a method of manufacturing a liquid crystal display having a photosensor according to a fifth embodiment of the present invention will be described with reference to "12A" to "12F". For example, please refer to "Fig. 12A", and a buffer layer 302 is formed on the substrate 3. Usually, the buffer layer 302 is formed of an inorganic insulating film such as nitriding or derivatization. Then, the semiconductor layers 3G4a, 3G4b, and 3G4c are formed in the first thin film transistor region (I), the second thin film transistor region (II), and the photo sensor region (III) in the buffer layer 302, respectively. Thereafter, a gate insulating film 306 is formed on the substrate having the semiconductor layers 3a, 4b, 304b, and 304c. The gate insulating film is formed of an inorganic insulating material such as cerium oxide (SiO 2 ). 27 1352250 Then, the gate electrodes 308a and 308b and the ion implantation preventing film 3〇8c are formed on the gate insulating films 3〇6 above the central portions of the semiconductor layers 304a, 304b and 304c, respectively. At the same time, the first and second auxiliary patterns 309a and 309b are formed on the gate insulating film 306 adjacent to the semiconductor layer 304c of the photo sensor region (III). In order to form the gate electrodes 308a and 308b, the ion implantation preventing film 3〇8c, and the first and second auxiliary patterns 309a and 309b, aluminum (A1), copper (germanium, molybdenum (Mo), titanium (Ti), chromium ( Any of Cr, a button (Ta), an aluminum alloy, a copper alloy, a molybdenum alloy, and a tungsten (w)-based metal is formed over this gate insulating film 3〇6, and then patterned by photolithography. Referring to "12B" to "12F", the p-type ion implantation regions 312a and 312b are respectively formed in the semiconductor layer of the first thin film transistor region (1) and the semiconductor of the second thin film transistor region (II). In the layer 304c, the n-type ion implantation regions 316a and 316b are respectively formed in the semiconductor layer 304b of the second thin film transistor region (π) and the semiconductor layer 3〇4c of the photo sensor region (ΠΙ). Lu Xun light doped immersion (LDD) layer applied 318b, first and second contact holes meet 322b, and source and drain 324 are formed sequentially. "12b" to "12f" The explanation of the process is the same as the detailed explanation of each process in "Phase 6B" to "6F". Therefore, "12B" to " The detailed explanation of each process of Figure will be replaced by the explanation of the processes of "Picture 6B" to "6F". The source and the 中 in the "Photo Sensor Area (冚)" The pole 324 overlaps with the first and second auxiliary patterns 309a and 30%.
2S 1352250 本發明第五實施例之具有-光感測器的液晶顯示器之製造方 法透過使用此第-及第二辅助電容器Cgs及Cgd以防止閘轉放 之電壓變化，並且透過使用離子植入防止膜施形成光感測器區 ..域（m)之半導體層中之離子非植入區域319提高了光感測器之 感測效率。 • 帛13A圖」至「第13c圖」係為本發明第六實施例之具有 一光感測器的液晶顯示器之製造方法之橫截面圖。 八 鲁籲.本發明第六實施例之具有-光感測器的液晶顯示器透過將 「第12A圖」至「第12D圖」與「第8A圖」至「第8C圖」相結 合而形成’因此本發明第六實施例之液晶顯示器的解釋將由本發 明第二至第五實施例之液晶顯示器的解釋所取代。 「第14A圖」及「第14B圖」係為本發明第七實施例之具有 一光感測态的液晶顯示器之製造方法之橫戴面圖。 本發明第七貫施例之具有一光感測器的液晶顯示器透過將 籲#「第12A圖」至「第12D圖」與「第9A圖」及「第9B圖」相結 合而形成，因此本發明第七實施例之液晶顯示器的解釋將由本發 明第二至第五實施例之液晶顯示器的解釋所取代。 「第15A圖」及.「第15B圖」係為本發明第八實施例之具有 一光感測器的液晶顯示器之製造方法之橫截面圖。 本發明第八實施例之具有一光感測器的液晶顯示器透過將 「第12A圖」至「第12D圖」與「第i〇A圖」及「第10B圖」相 29 1352250 • · 結合而形成’因此本發明第八實施例之液晶顯示器的轉將由本 發明第四至第五實施例之液晶顯示器的解釋所取代。 如上所述，本發明較佳實施例之具有-光感測器的液晶顯示 • 器及其製造方法具有以下優點。 / 在本發佳實施例.之具有—域測器晶顯示器中，在 ：形織晶體之陳之過財，料植續蝴形成於此光感 測器區域中’並且透過使用此離子植入防止膜，沒有離子植入的 _籲離子非植入區域形成於此光感測器區域之半導體層中，因此提高 了光感測器之感測效率。 _ ° 而且’此第-及第―輔助電容器防止此光感·之浮動間極 釋放之電壓變化，並且離子植續賴有利於此光_器區域之 ，半導體射之離子紐人區域之形成，ϋ此提高了域測器之感 測敢率。 ’ 本領域之她人貞齡意朗在不_本發明之精神和範圍 ♦鲁的情況下’所作之更動與潤倚，均屬本發明之專利保護範圍之内。 因此本發明心有麵社+請翻範圍内的變化與修飾。 【圖式簡單說明】 . 帛1圖係為f知技術之具有-光感測器的液晶顯示器之分解 透視圖； ^ 第2圖係為第！圖中之液晶面板之平面圖； D _聽含於習知技術之液轉^中之—城測器及 30 1352250 一薄膜電晶體之橫截面圖； 第4圖係為習知技術之光感測器之電流_電壓特性之示意圖； 口口第5圖係為本發明第一實施例之具有一光感測器之液晶顯示 器中的光感測器區域及一薄膜電晶體區域之橫截面圖； 第6A圖至第6F圖係為本發明第一實施例之具有一光感测器 之液晶顯示器製造方法之橫截面圖； 弟7圖係為本發明之光感測器之·電流_電壓特性之示意圖； 鲁 帛8A圖至第8C圖係為本發明第二實施例之具有一光感測器 之液晶顯示器製造方法之橫截面圖； 第9A圖及第9B圖係為本發明第三實施例之具有一光感測器 之液晶顯示器製造方法之橫截面圖； 第10A圖及第10B圖係為本發明第四實施例之具有一光感測 器之液晶顯示器製造方法之橫截面圖； 第11圖係為本發明第五實施例之具有一光感測器之液晶顯示 _器中的-光感測器區域及-薄膜電晶聽區域之橫截面圖； 第12A圖至帛12F圖係為本發明第五實施例之具有一光感測 器之液晶顯示器製造方法之橫截面圖； 第13A圖至第DC圖係為本發明第六實施例之具有一光感測 器之液晶顯示器製造方法之橫截面圖； 第14A圖及第14B圖係為本章明第七實施例之具有一光感測 态之液晶顯示器製造方法之橫截面圖；以及 31 1352250 第15A圖及第15B圖係為本發明第八實施例之具有一光感測 器之液晶顯示器製造方法之橫截面圖。 【主要元件符號說明】 100 液晶顯不裔 101 彩色濾、光器 103 共同電極 105 黑矩陣膜 110 頂基板 120 底基板 121 薄膜電晶體 123 晝素電極 125 閘極線 125a 閘極塾 127 資料線 127a 資料墊 130 液晶層 140 光感測器 150 液晶面板 162 缓衝層 163 p型半導體層 163a P型離子植入區域 32 13522502S 1352250 A method of manufacturing a liquid crystal display having a photosensor according to a fifth embodiment of the present invention prevents the voltage change of the gate transfer by using the first and second auxiliary capacitors Cgs and Cgd, and prevents the use of ion implantation Membrane application to the photosensor region: The ion non-implantation region 319 in the semiconductor layer of the domain (m) increases the sensing efficiency of the photosensor. • Fig. 13A to Fig. 13c are cross-sectional views showing a method of manufacturing a liquid crystal display having a photosensor according to a sixth embodiment of the present invention.八鲁吁. The liquid crystal display with photo-sensor of the sixth embodiment of the present invention is formed by combining "12A" to "12D" and "8A" to "8C". Therefore, the explanation of the liquid crystal display of the sixth embodiment of the present invention will be replaced by the explanation of the liquid crystal display of the second to fifth embodiments of the present invention. Fig. 14A and Fig. 14B are cross-sectional views showing a method of manufacturing a liquid crystal display having a light-sensing state according to a seventh embodiment of the present invention. The liquid crystal display having a photosensor according to the seventh embodiment of the present invention is formed by combining the "12A map" to the "12D map" with the "9A map" and the "9B map". The explanation of the liquid crystal display of the seventh embodiment of the present invention will be replaced by the explanation of the liquid crystal display of the second to fifth embodiments of the present invention. Fig. 15A and Fig. 15B are cross-sectional views showing a method of manufacturing a liquid crystal display having a photosensor according to an eighth embodiment of the present invention. The liquid crystal display with a light sensor according to the eighth embodiment of the present invention combines "12A" to "12D" with "i〇A" and "10B" 29 1352250 • Thus, the rotation of the liquid crystal display of the eighth embodiment of the present invention will be replaced by the explanation of the liquid crystal display of the fourth to fifth embodiments of the present invention. As described above, the liquid crystal display device having the photosensor of the preferred embodiment of the present invention and the method of manufacturing the same have the following advantages. / In the preferred embodiment of the present invention, in the field of the crystal display, in the: the shape of the crystal of the rich, the plant continues to form in the area of the light sensor' and through the use of this ion implantation The anti-membrane, non-implanted non-implanted region is formed in the semiconductor layer of the photosensor region, thus improving the sensing efficiency of the photo sensor. _ ° and 'this first-and-first-auxiliary capacitors prevent the voltage change of the floating-pole release of this light sensation, and the ion implantation continues to facilitate the formation of the ionic region of the semiconductor shot. This improves the sensory dare rate of the domain detector. It is within the scope of the patent protection of the present invention to make changes and remedies made by others in the field without the singularity and scope of the present invention. Therefore, the present invention has a face-to-face community + please change and modify within the scope. [Simple diagram of the diagram] The 帛1 diagram is an exploded perspective view of the liquid crystal display with the light sensor of the technology of the know; ^ The second picture is the first! A plan view of a liquid crystal panel in the figure; D _ a cross-sectional view of a thin film transistor in a liquid transfer device of the prior art; and a thin film transistor of 30 1352250; Fig. 4 is a light sensing method of the prior art Figure 5 is a cross-sectional view of a photosensor region and a thin film transistor region in a liquid crystal display having a photosensor according to a first embodiment of the present invention; 6A to 6F are cross-sectional views showing a method of fabricating a liquid crystal display having a photosensor according to a first embodiment of the present invention; FIG. 7 is a current-voltage characteristic of the photosensor of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 9A to FIG. 8C are cross-sectional views showing a method of manufacturing a liquid crystal display having a photosensor according to a second embodiment of the present invention; FIGS. 9A and 9B are third embodiment of the present invention; A cross-sectional view of a method of fabricating a liquid crystal display having a photosensor; FIGS. 10A and 10B are cross-sectional views showing a method of fabricating a liquid crystal display having a photosensor according to a fourth embodiment of the present invention; Figure 11 is a fifth embodiment of the present invention having a A cross-sectional view of a photosensor region and a thin film electro-acoustic region in a liquid crystal display of a photo sensor; FIGS. 12A to 12F are a photo sensing according to a fifth embodiment of the present invention; A cross-sectional view of a method of manufacturing a liquid crystal display device; a 13A to a DC drawing is a cross-sectional view showing a method of fabricating a liquid crystal display having a photosensor according to a sixth embodiment of the present invention; FIGS. 14A and 14B A cross-sectional view of a method of fabricating a liquid crystal display having a photo-sensing state according to a seventh embodiment of the present invention; and 31 1352250, FIGS. 15A and 15B are diagrams showing a photosensor according to an eighth embodiment of the present invention. A cross-sectional view of a method of fabricating a liquid crystal display. [Main component symbol description] 100 Liquid crystal display 101 Color filter, optical device 103 Common electrode 105 Black matrix film 110 Top substrate 120 Base substrate 121 Thin film transistor 123 Alizarin electrode 125 Gate line 125a Gate 塾127 Data line 127a Data pad 130 liquid crystal layer 140 photo sensor 150 liquid crystal panel 162 buffer layer 163 p-type semiconductor layer 163a P-type ion implantation region 32 1352250
163b 離子非植入區域 164 n型半導體層 164a η+型離子植入區域 164b 離子非植入區域 164c η—型輕摻雜汲極（LDD)層 165 η型及ρ型半導體層 165a η+型離子植入區域 165b ρ型離子植入區域 165c 離子植入區域 166 閘極絕緣膜 168 閘極 170 絕緣夾層 172 源極及汲極 200 背光單元 300 基板 302 缓衝層 304a、304b、304c 半導體層 306 閘極絕緣膜 308a、308b 、閘極 308c 離子植入防止膜 309a 第一輔助圖案 1352250 30% 第二輔助圖案 310 第一光阻抗姓圖案 312a、312b p型離子植入區域 314 第二光阻抗蝕圖案 316a 、 316b η型離子植入區域 318a ' 318b 輕摻雜汲極（LDD)層 319 離子非植入區域 320 鈍化膜 322a /第一接觸孔 322b ' 322c ' 322d 第二接觸孔 323 金屬膜 324 源極及汲極 340 光阻抗餘圖案 Cgs 第一輔助電容器 Cgd 第二輔助電容器 I 第一薄膜電晶體區域 II 苐二薄膜電晶體區域 III 光感測器區域 34163b ion non-implanted region 164 n-type semiconductor layer 164a n+ type ion implantation region 164b ion non-implanted region 164c n-type lightly doped drain (LDD) layer 165 n-type and p-type semiconductor layer 165a η+ type Ion implantation region 165b p-type ion implantation region 165c ion implantation region 166 gate insulating film 168 gate 170 insulating interlayer 172 source and drain 200 backlight unit 300 substrate 302 buffer layer 304a, 304b, 304c semiconductor layer 306 Gate insulating film 308a, 308b, gate 308c ion implantation preventing film 309a first auxiliary pattern 1352250 30% second auxiliary pattern 310 first optical impedance surname pattern 312a, 312b p-type ion implantation region 314 second photoresist resist Pattern 316a, 316b n-type ion implantation region 318a ' 318b lightly doped drain (LDD) layer 319 ion non-implanted region 320 passivation film 322a / first contact hole 322b ' 322c ' 322d second contact hole 323 metal film 324 Source and drain 340 optical impedance residual pattern Cgs first auxiliary capacitor Cgd second auxiliary capacitor I first thin film transistor region II second thin film transistor region III Photosensor area 34
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| CN104362125B (en) * | 2014-09-25 | 2017-10-13 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof, display device |
| CN111863839B (en) * | 2020-07-27 | 2023-09-22 | 合肥鑫晟光电科技有限公司 | An array substrate, its preparation method and display panel |
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