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TWI351060B - Substrate dryer using supercritical fluid, apparatus including the same, and method for treating substrate - Google Patents

Substrate dryer using supercritical fluid, apparatus including the same, and method for treating substrate

Info

Publication number
TWI351060B
TWI351060B TW096119270A TW96119270A TWI351060B TW I351060 B TWI351060 B TW I351060B TW 096119270 A TW096119270 A TW 096119270A TW 96119270 A TW96119270 A TW 96119270A TW I351060 B TWI351060 B TW I351060B
Authority
TW
Taiwan
Prior art keywords
substrate
same
apparatus including
supercritical fluid
dryer
Prior art date
Application number
TW096119270A
Other languages
English (en)
Other versions
TW200814182A (en
Inventor
Jung-Keun Cho
Kyo-Woog Koo
Original Assignee
Semes Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semes Co Ltd filed Critical Semes Co Ltd
Publication of TW200814182A publication Critical patent/TW200814182A/zh
Application granted granted Critical
Publication of TWI351060B publication Critical patent/TWI351060B/zh

Links

Classifications

    • H10P72/0408—
    • H10P52/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

Landscapes

  • Engineering & Computer Science (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Solid Materials (AREA)
TW096119270A 2006-09-12 2007-05-30 Substrate dryer using supercritical fluid, apparatus including the same, and method for treating substrate TWI351060B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060087935A KR100822373B1 (ko) 2006-09-12 2006-09-12 초임계 유체를 이용한 기판 건조 장치, 이를 구비한 기판처리 설비 및 기판 처리 방법

Publications (2)

Publication Number Publication Date
TW200814182A TW200814182A (en) 2008-03-16
TWI351060B true TWI351060B (en) 2011-10-21

Family

ID=39169890

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096119270A TWI351060B (en) 2006-09-12 2007-05-30 Substrate dryer using supercritical fluid, apparatus including the same, and method for treating substrate

Country Status (5)

Country Link
US (1) US8898926B2 (zh)
JP (1) JP4545181B2 (zh)
KR (1) KR100822373B1 (zh)
CN (1) CN101144678B (zh)
TW (1) TWI351060B (zh)

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JP2010074140A (ja) * 2008-08-22 2010-04-02 Toshiba Corp 基板処理装置および基板処理方法
JP5293459B2 (ja) 2009-07-01 2013-09-18 東京エレクトロン株式会社 基板処理装置
KR101048063B1 (ko) * 2009-12-30 2011-07-11 세메스 주식회사 기판 처리 장치 및 방법
JP5494146B2 (ja) 2010-04-05 2014-05-14 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5477131B2 (ja) 2010-04-08 2014-04-23 東京エレクトロン株式会社 基板処理装置
JP5647845B2 (ja) 2010-09-29 2015-01-07 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥装置及び基板乾燥方法
JP5146522B2 (ja) * 2010-11-26 2013-02-20 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5544666B2 (ja) 2011-06-30 2014-07-09 セメス株式会社 基板処理装置
JP5458314B2 (ja) * 2011-06-30 2014-04-02 セメス株式会社 基板処理装置及び超臨界流体排出方法
JP5686261B2 (ja) 2011-07-29 2015-03-18 セメス株式会社ＳＥＭＥＳ ＣＯ．， Ｌｔｄ 基板処理装置及び基板処理方法
KR101329304B1 (ko) * 2011-07-29 2013-11-14 세메스 주식회사 기판처리장치 및 기판처리방법
JP5678858B2 (ja) 2011-09-29 2015-03-04 東京エレクトロン株式会社 基板処理装置
KR101874901B1 (ko) * 2011-12-07 2018-07-06 삼성전자주식회사 기판 건조 장치 및 방법
KR101932035B1 (ko) 2012-02-08 2018-12-26 삼성전자주식회사 기판 처리용 유체 공급 시스템 및 방법
JP5859888B2 (ja) * 2012-03-26 2016-02-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
TWI826650B (zh) 2012-11-26 2023-12-21 美商應用材料股份有限公司 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理
CN103363783B (zh) * 2013-07-15 2014-12-10 哈尔滨工业大学 一种超临界流体干燥装置及使用方法
CN104681425B (zh) 2013-11-29 2018-07-31 细美事有限公司 基板处理装置及基板处理方法
WO2016007874A1 (en) 2014-07-11 2016-01-14 Applied Materials, Inc. Supercritical carbon dioxide process for low-k thin films
CN116206947A (zh) 2015-10-04 2023-06-02 应用材料公司 缩减空间的处理腔室
CN108140546B (zh) 2015-10-04 2022-04-12 应用材料公司 用于高纵横比特征的干燥工艺
CN115527897A (zh) * 2015-10-04 2022-12-27 应用材料公司 小热质量的加压腔室
WO2017062141A1 (en) 2015-10-04 2017-04-13 Applied Materials, Inc. Substrate support and baffle apparatus
KR102603528B1 (ko) 2016-12-29 2023-11-17 삼성전자주식회사 기판 처리 장치 및 이를 포함한 기판 처리 시스템
KR102358561B1 (ko) * 2017-06-08 2022-02-04 삼성전자주식회사 기판 처리 장치 및 집적회로 소자 제조 장치
US11133176B2 (en) * 2017-08-09 2021-09-28 Tokyo Electron Limited Substrate processing method, recording medium and substrate processing system
KR102143139B1 (ko) 2018-04-30 2020-08-12 세메스 주식회사 기판 처리 장치
KR102161037B1 (ko) * 2019-01-31 2020-10-05 무진전자 주식회사 기판 건조 챔버
WO2020209536A1 (ko) * 2019-04-09 2020-10-15 무진전자 주식회사 기판 건조 챔버
JP7236338B2 (ja) * 2019-06-28 2023-03-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP7336956B2 (ja) * 2019-10-10 2023-09-01 東京エレクトロン株式会社 基板処理システム、及び基板処理方法
KR102774615B1 (ko) 2020-12-15 2025-02-27 삼성전자주식회사 기판 건조 장치 및 이를 이용한 반도체 장치 제조 방법
KR102798786B1 (ko) 2020-12-29 2025-04-22 삼성전자주식회사 기판 처리 방법, 미세 패턴 형성 방법, 및 기판 처리 장치
KR102852007B1 (ko) 2020-12-30 2025-08-29 세메스 주식회사 지지 장치 및 지지 장치를 포함하는 기판 처리 장치
KR20230043015A (ko) 2021-09-23 2023-03-30 주식회사 지디텍 반도체장치 및 그 제조방법
JP2024044508A (ja) * 2022-09-21 2024-04-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

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JP4350843B2 (ja) * 1999-08-20 2009-10-21 株式会社神戸製鋼所 超臨界乾燥装置
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JP2003109933A (ja) 2001-10-01 2003-04-11 Hitachi Koki Co Ltd 超臨界乾燥装置
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JP3939178B2 (ja) * 2002-03-25 2007-07-04 大日本スクリーン製造株式会社 高圧乾燥装置、高圧乾燥方法および基板処理装置
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CN1263106C (zh) * 2002-12-31 2006-07-05 台湾积体电路制造股份有限公司 可去除半导体晶圆表面铜氧化物及水气的系统与工艺流程
US7736558B2 (en) * 2003-01-07 2010-06-15 Hitachi Maxell, Ltd. Imprint manufacture method
JP4085870B2 (ja) 2003-04-02 2008-05-14 株式会社日立ハイテクサイエンスシステムズ 微細構造乾燥法とその装置及びそのシステム
US6860944B2 (en) * 2003-06-16 2005-03-01 Blue29 Llc Microelectronic fabrication system components and method for processing a wafer using such components
JP4247087B2 (ja) 2003-10-07 2009-04-02 株式会社日立ハイテクサイエンスシステムズ 微細構造乾燥処理方法及びその装置

Also Published As

Publication number Publication date
JP2008072118A (ja) 2008-03-27
CN101144678A (zh) 2008-03-19
KR100822373B1 (ko) 2008-04-17
CN101144678B (zh) 2011-12-07
TW200814182A (en) 2008-03-16
KR20080023854A (ko) 2008-03-17
US8898926B2 (en) 2014-12-02
JP4545181B2 (ja) 2010-09-15
US20080063493A1 (en) 2008-03-13

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