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TWI350591B - Mos transistor and manufacturing method thereof - Google Patents

Mos transistor and manufacturing method thereof

Info

Publication number
TWI350591B
TWI350591B TW096112832A TW96112832A TWI350591B TW I350591 B TWI350591 B TW I350591B TW 096112832 A TW096112832 A TW 096112832A TW 96112832 A TW96112832 A TW 96112832A TW I350591 B TWI350591 B TW I350591B
Authority
TW
Taiwan
Prior art keywords
manufacturing
mos transistor
mos
transistor
Prior art date
Application number
TW096112832A
Other languages
English (en)
Other versions
TW200841466A (en
Inventor
Kai Yi Huang
Ta Hsun Yeh
Yuh Sheng Jean
Original Assignee
Realtek Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Realtek Semiconductor Corp filed Critical Realtek Semiconductor Corp
Priority to TW096112832A priority Critical patent/TWI350591B/zh
Priority to US12/056,293 priority patent/US7986007B2/en
Publication of TW200841466A publication Critical patent/TW200841466A/zh
Application granted granted Critical
Publication of TWI350591B publication Critical patent/TWI350591B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
TW096112832A 2007-04-12 2007-04-12 Mos transistor and manufacturing method thereof TWI350591B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW096112832A TWI350591B (en) 2007-04-12 2007-04-12 Mos transistor and manufacturing method thereof
US12/056,293 US7986007B2 (en) 2007-04-12 2008-03-27 MOS transistor and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096112832A TWI350591B (en) 2007-04-12 2007-04-12 Mos transistor and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW200841466A TW200841466A (en) 2008-10-16
TWI350591B true TWI350591B (en) 2011-10-11

Family

ID=39852920

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096112832A TWI350591B (en) 2007-04-12 2007-04-12 Mos transistor and manufacturing method thereof

Country Status (2)

Country Link
US (1) US7986007B2 (zh)
TW (1) TWI350591B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105810573A (zh) * 2016-03-15 2016-07-27 深圳市华星光电技术有限公司 薄膜晶体管的制作方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6313687B1 (en) 1960-08-17 2001-11-06 Agere Systems Guardian Corp. Variable impedance circuit
US5293058A (en) 1992-11-12 1994-03-08 The Trustees Of Columbia University Linear voltage-controlled resistance element
JPH08241985A (ja) 1995-03-06 1996-09-17 Nippon Motorola Ltd Ｌｄ−ｍｏｓトランジスタ
US6051856A (en) 1997-09-30 2000-04-18 Samsung Electronics Co., Ltd. Voltage-controlled resistor utilizing bootstrap gate FET
US5955911A (en) 1997-10-06 1999-09-21 Sun Microsystems, Inc. On-chip differential resistance technique with noise immunity and symmetric resistance
US6218251B1 (en) 1998-11-06 2001-04-17 Advanced Micro Devices, Inc. Asymmetrical IGFET devices with spacers formed by HDP techniques
US6356154B1 (en) 2000-07-06 2002-03-12 Credence Systems Corporation FET-based, linear voltage-controlled resistor for wide-band gain control circuit
US6504416B1 (en) 2001-08-14 2003-01-07 Stmicroelectronics, Inc. High linearity, low power voltage controlled resistor
US7009265B2 (en) 2004-06-11 2006-03-07 International Business Machines Corporation Low capacitance FET for operation at subthreshold voltages
US7535042B2 (en) * 2004-07-01 2009-05-19 Aptina Imaging Corporation Pixel cell with a controlled output signal knee characteristic response
US20060040450A1 (en) * 2004-08-20 2006-02-23 Sharp Laboratories Of America, Inc. Source/drain structure for high performance sub 0.1 micron transistors

Also Published As

Publication number Publication date
US7986007B2 (en) 2011-07-26
US20080251841A1 (en) 2008-10-16
TW200841466A (en) 2008-10-16

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