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TWI350579B - Integrated circuit device, method for forming and operating an integrated circuit, method for forming and operating a semiconductor device - Google Patents

Integrated circuit device, method for forming and operating an integrated circuit, method for forming and operating a semiconductor device

Info

Publication number
TWI350579B
TWI350579B TW096143663A TW96143663A TWI350579B TW I350579 B TWI350579 B TW I350579B TW 096143663 A TW096143663 A TW 096143663A TW 96143663 A TW96143663 A TW 96143663A TW I350579 B TWI350579 B TW I350579B
Authority
TW
Taiwan
Prior art keywords
operating
forming
integrated circuit
semiconductor device
circuit device
Prior art date
Application number
TW096143663A
Other languages
English (en)
Other versions
TW200830475A (en
Inventor
Shih Wei Wang
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200830475A publication Critical patent/TW200830475A/zh
Application granted granted Critical
Publication of TWI350579B publication Critical patent/TWI350579B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
TW096143663A 2006-11-20 2007-11-19 Integrated circuit device, method for forming and operating an integrated circuit, method for forming and operating a semiconductor device TWI350579B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/602,065 US7994564B2 (en) 2006-11-20 2006-11-20 Non-volatile memory cells formed in back-end-of line processes

Publications (2)

Publication Number Publication Date
TW200830475A TW200830475A (en) 2008-07-16
TWI350579B true TWI350579B (en) 2011-10-11

Family

ID=39416076

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096143663A TWI350579B (en) 2006-11-20 2007-11-19 Integrated circuit device, method for forming and operating an integrated circuit, method for forming and operating a semiconductor device

Country Status (2)

Country Link
US (2) US7994564B2 (zh)
TW (1) TWI350579B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8004060B2 (en) * 2007-11-29 2011-08-23 International Business Machines Corporation Metal gate compatible electrical antifuse
JP2013069947A (ja) * 2011-09-26 2013-04-18 Toshiba Corp 不揮発性半導体記憶装置の製造方法および不揮発性半導体記憶装置
GB201418888D0 (en) 2014-10-23 2014-12-10 Univ Lancaster Improvements relating to electronic memory devices
US11251371B2 (en) 2017-03-24 2022-02-15 Gwangju Institute Of Science And Technology Nonvolatile memory device having multi-level resistance and capacitance characteristics, and manufacturing method thereof

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Also Published As

Publication number Publication date
TW200830475A (en) 2008-07-16
US8247293B2 (en) 2012-08-21
US20080116505A1 (en) 2008-05-22
US20110267897A1 (en) 2011-11-03
US7994564B2 (en) 2011-08-09

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees