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TWI349831B - Resist polymer and method for producing the polymer - Google Patents

Resist polymer and method for producing the polymer

Info

Publication number
TWI349831B
TWI349831B TW093102596A TW93102596A TWI349831B TW I349831 B TWI349831 B TW I349831B TW 093102596 A TW093102596 A TW 093102596A TW 93102596 A TW93102596 A TW 93102596A TW I349831 B TWI349831 B TW I349831B
Authority
TW
Taiwan
Prior art keywords
polymer
producing
resist
resist polymer
Prior art date
Application number
TW093102596A
Other languages
English (en)
Other versions
TW200504456A (en
Inventor
Yamagishi Takanori
Oikawa Tomo
Kato Ichiro
Mizuno Kazuhiko
Yamaguchi Satoshi
Original Assignee
Maruzen Petrochem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Maruzen Petrochem Co Ltd filed Critical Maruzen Petrochem Co Ltd
Publication of TW200504456A publication Critical patent/TW200504456A/zh
Application granted granted Critical
Publication of TWI349831B publication Critical patent/TWI349831B/zh

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L55/00—Devices or appurtenances for use in, or in connection with, pipes or pipe systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L3/00—Supports for pipes, cables or protective tubing, e.g. hangers, holders, clamps, cleats, clips, brackets
    • F16L3/08—Supports for pipes, cables or protective tubing, e.g. hangers, holders, clamps, cleats, clips, brackets substantially surrounding the pipe, cable or protective tubing
    • F16L3/10—Supports for pipes, cables or protective tubing, e.g. hangers, holders, clamps, cleats, clips, brackets substantially surrounding the pipe, cable or protective tubing divided, i.e. with two members engaging the pipe, cable or protective tubing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polymerisation Methods In General (AREA)
TW093102596A 2003-02-20 2004-02-05 Resist polymer and method for producing the polymer TWI349831B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003042536 2003-02-20

Publications (2)

Publication Number Publication Date
TW200504456A TW200504456A (en) 2005-02-01
TWI349831B true TWI349831B (en) 2011-10-01

Family

ID=32866439

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093102596A TWI349831B (en) 2003-02-20 2004-02-05 Resist polymer and method for producing the polymer

Country Status (3)

Country Link
US (3) US20040167298A1 (zh)
KR (1) KR100914425B1 (zh)
TW (1) TWI349831B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4743426B2 (ja) * 2006-05-12 2011-08-10 信越化学工業株式会社 レジスト材料用重合体及びその製造方法、レジスト材料、パターン形成方法
JP5030474B2 (ja) * 2006-05-18 2012-09-19 丸善石油化学株式会社 半導体リソグラフィー用樹脂組成物
JP5588095B2 (ja) * 2006-12-06 2014-09-10 丸善石油化学株式会社 半導体リソグラフィー用共重合体とその製造方法
KR101446819B1 (ko) * 2006-12-22 2014-10-01 마루젠 세끼유가가꾸 가부시키가이샤 반도체 리소그래피용 중합체의 제조 방법
US8153346B2 (en) * 2007-02-23 2012-04-10 Fujifilm Electronic Materials, U.S.A., Inc. Thermally cured underlayer for lithographic application
KR20080084745A (ko) * 2007-03-14 2008-09-19 후지필름 가부시키가이샤 레지스트 표면 소수화용 수지, 그 제조방법 및 그 수지를함유하는 포지티브 레지스트 조성물
JP5743858B2 (ja) * 2011-11-14 2015-07-01 丸善石油化学株式会社 低分子量レジスト用共重合体の製造方法
KR101530150B1 (ko) * 2013-08-02 2015-06-19 주식회사 엘지화학 고무강화 열가소성 수지의 제조방법
JP6838863B2 (ja) * 2015-04-22 2021-03-03 株式会社ダイセル フォトレジスト用樹脂、フォトレジスト樹脂の製造方法、フォトレジスト用樹脂組成物、及びパターン形成方法
JP7242216B2 (ja) 2018-08-23 2023-03-20 株式会社ダイセル ポリマーの製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4603101A (en) 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
JPH03223860A (ja) 1990-01-30 1991-10-02 Wako Pure Chem Ind Ltd 新規レジスト材料
DE4007924A1 (de) 1990-03-13 1991-09-19 Basf Ag Strahlungsempfindliches gemisch
JPH04104251A (ja) 1990-08-24 1992-04-06 Wako Pure Chem Ind Ltd 新規なレジスト材料
JPH04269754A (ja) 1991-02-26 1992-09-25 Hitachi Chem Co Ltd ポジ型感光性樹脂組成物及びこれを用いた感光性エレメント
JP2964733B2 (ja) 1991-10-23 1999-10-18 三菱電機株式会社 パターン形成材料
JPH0656910A (ja) * 1992-08-05 1994-03-01 Toagosei Chem Ind Co Ltd アニオン重合による重合体の連続式製造方法
JP3116751B2 (ja) 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
JP3751065B2 (ja) 1995-06-28 2006-03-01 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JP3832780B2 (ja) 1997-02-27 2006-10-11 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
JP3627465B2 (ja) 1997-08-15 2005-03-09 Ｊｓｒ株式会社 感放射線性樹脂組成物
EP1074566B1 (en) 1998-03-27 2013-07-17 Mitsubishi Rayon Co., Ltd. Copolymer, process for producing the same, and resist composition
JP3476359B2 (ja) 1998-04-08 2003-12-10 富士通株式会社 レジスト材料とその調製方法、及びレジストパターンの形成方法
JP4049236B2 (ja) 1999-10-06 2008-02-20 富士フイルム株式会社 ポジ型レジスト組成物
JP2002006501A (ja) 1999-11-09 2002-01-09 Sumitomo Chem Co Ltd 化学増幅型レジスト組成物
JP4838437B2 (ja) * 2000-06-16 2011-12-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4790153B2 (ja) * 2000-09-01 2011-10-12 富士通株式会社 ネガ型レジスト組成物、レジストパターンの形成方法及び電子デバイスの製造方法
JP2002121223A (ja) * 2000-10-11 2002-04-23 Sanyo Chem Ind Ltd 重合体及びその製法
JP4929552B2 (ja) * 2000-10-30 2012-05-09 住友化学株式会社 固体樹脂の製造方法
KR100970661B1 (ko) * 2001-02-27 2010-07-15 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 신규 폴리머, 폴리머 합성 방법 및 포토레지스트 조성물
JP3890979B2 (ja) * 2001-12-27 2007-03-07 住友化学株式会社 化学増幅型ポジ型レジスト組成物
TWI285650B (en) * 2002-03-25 2007-08-21 Shinetsu Chemical Co Polymers, resist compositions and patterning process

Also Published As

Publication number Publication date
KR20040075742A (ko) 2004-08-30
US20050287474A1 (en) 2005-12-29
US20090123868A1 (en) 2009-05-14
US20040167298A1 (en) 2004-08-26
US8163852B2 (en) 2012-04-24
KR100914425B1 (ko) 2009-08-27
TW200504456A (en) 2005-02-01

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