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TWI349044B - Apparatus for depositing atomic layer using gas separation type showerhead - Google Patents

Apparatus for depositing atomic layer using gas separation type showerhead

Info

Publication number
TWI349044B
TWI349044B TW096109114A TW96109114A TWI349044B TW I349044 B TWI349044 B TW I349044B TW 096109114 A TW096109114 A TW 096109114A TW 96109114 A TW96109114 A TW 96109114A TW I349044 B TWI349044 B TW I349044B
Authority
TW
Taiwan
Prior art keywords
atomic layer
gas separation
separation type
type showerhead
depositing atomic
Prior art date
Application number
TW096109114A
Other languages
English (en)
Other versions
TW200736413A (en
Inventor
Geun Hag Bae
Kyung Soo Kim
Ho Sik Kim
Original Assignee
Atto Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020060025775A external-priority patent/KR100802382B1/ko
Priority claimed from KR1020060034183A external-priority patent/KR100744528B1/ko
Application filed by Atto Co Ltd filed Critical Atto Co Ltd
Publication of TW200736413A publication Critical patent/TW200736413A/zh
Application granted granted Critical
Publication of TWI349044B publication Critical patent/TWI349044B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
TW096109114A 2006-03-21 2007-03-16 Apparatus for depositing atomic layer using gas separation type showerhead TWI349044B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060025775A KR100802382B1 (ko) 2006-03-21 2006-03-21 가스분리형 샤워헤드를 이용한 원자층 증착 장치
KR1020060034183A KR100744528B1 (ko) 2006-04-14 2006-04-14 알에프 파워가 인가되는 가스 분리형 샤워헤드를 이용한플라즈마 원자층 증착장치 및 방법

Publications (2)

Publication Number Publication Date
TW200736413A TW200736413A (en) 2007-10-01
TWI349044B true TWI349044B (en) 2011-09-21

Family

ID=38532002

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096109114A TWI349044B (en) 2006-03-21 2007-03-16 Apparatus for depositing atomic layer using gas separation type showerhead

Country Status (2)

Country Link
US (1) US20070221129A1 (zh)
TW (1) TWI349044B (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8291857B2 (en) 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
US20120258607A1 (en) * 2011-04-11 2012-10-11 Lam Research Corporation E-Beam Enhanced Decoupled Source for Semiconductor Processing
US9303318B2 (en) * 2011-10-20 2016-04-05 Applied Materials, Inc. Multiple complementary gas distribution assemblies
KR20130090287A (ko) * 2012-02-03 2013-08-13 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
KR101989058B1 (ko) 2012-10-24 2019-06-14 삼성디스플레이 주식회사 기상 증착 장치, 이를 이용한 박막 형성 방법 및 유기 발광 표시 장치 제조 방법
US9090972B2 (en) * 2012-12-31 2015-07-28 Lam Research Corporation Gas supply systems for substrate processing chambers and methods therefor
KR101407068B1 (ko) * 2013-01-14 2014-06-13 한양대학교 산학협력단 고속 원거리 플라즈마 원자층 증착장치
WO2014197396A1 (en) * 2013-06-03 2014-12-11 Ultratech, Inc. Gas deposition head for spatial ald
US10781516B2 (en) * 2013-06-28 2020-09-22 Lam Research Corporation Chemical deposition chamber having gas seal
JP2016134569A (ja) * 2015-01-21 2016-07-25 株式会社東芝 半導体製造装置
WO2019152514A1 (en) * 2018-01-30 2019-08-08 Applied Materials, Inc. Gas injector insert segment for spatial ald
US11021792B2 (en) 2018-08-17 2021-06-01 Lam Research Corporation Symmetric precursor delivery
CN110158055B (zh) * 2019-05-15 2022-01-14 拓荆科技股份有限公司 多段喷淋组件
TW202534830A (zh) * 2023-11-07 2025-09-01 美商蘭姆研究公司 雙充氣部噴淋頭

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995026427A1 (de) * 1994-03-29 1995-10-05 Schott Glaswerke Pcvd-verfahren und vorrichtung zur beschichtung von gewölbten substraten
JP3360265B2 (ja) * 1996-04-26 2002-12-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP4151862B2 (ja) * 1998-02-26 2008-09-17 キヤノンアネルバ株式会社 Ｃｖｄ装置
JP2002129337A (ja) * 2000-10-24 2002-05-09 Applied Materials Inc 気相堆積方法及び装置

Also Published As

Publication number Publication date
TW200736413A (en) 2007-10-01
US20070221129A1 (en) 2007-09-27

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Legal Events

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