[go: up one dir, main page]

TWI347641B - Selective spacer formation on transistors of different classes on the same device - Google Patents

Selective spacer formation on transistors of different classes on the same device

Info

Publication number
TWI347641B
TWI347641B TW096123560A TW96123560A TWI347641B TW I347641 B TWI347641 B TW I347641B TW 096123560 A TW096123560 A TW 096123560A TW 96123560 A TW96123560 A TW 96123560A TW I347641 B TWI347641 B TW I347641B
Authority
TW
Taiwan
Prior art keywords
transistors
same device
different classes
spacer formation
selective spacer
Prior art date
Application number
TW096123560A
Other languages
English (en)
Other versions
TW200824008A (en
Inventor
Giuseppe Curello
Ian R Post
Chia-Hong Jan
Mark Bohr
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW200824008A publication Critical patent/TW200824008A/zh
Application granted granted Critical
Publication of TWI347641B publication Critical patent/TWI347641B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0184—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/792—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions comprising applied insulating layers, e.g. stress liners
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/015—Manufacture or treatment removing at least parts of gate spacers, e.g. disposable spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
TW096123560A 2006-06-30 2007-06-28 Selective spacer formation on transistors of different classes on the same device TWI347641B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/479,762 US7541239B2 (en) 2006-06-30 2006-06-30 Selective spacer formation on transistors of different classes on the same device

Publications (2)

Publication Number Publication Date
TW200824008A TW200824008A (en) 2008-06-01
TWI347641B true TWI347641B (en) 2011-08-21

Family

ID=38877197

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096123560A TWI347641B (en) 2006-06-30 2007-06-28 Selective spacer formation on transistors of different classes on the same device

Country Status (6)

Country Link
US (3) US7541239B2 (zh)
KR (1) KR101065827B1 (zh)
CN (1) CN101454884B (zh)
DE (1) DE112007001161B4 (zh)
TW (1) TWI347641B (zh)
WO (1) WO2008005377A2 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7541239B2 (en) * 2006-06-30 2009-06-02 Intel Corporation Selective spacer formation on transistors of different classes on the same device
US7456066B2 (en) * 2006-11-03 2008-11-25 Taiwan Semiconductor Manufacturing Co., Ltd. Variable width offset spacers for mixed signal and system on chip devices
US20080179636A1 (en) * 2007-01-27 2008-07-31 International Business Machines Corporation N-fets with tensilely strained semiconductor channels, and method for fabricating same using buried pseudomorphic layers
US8058123B2 (en) 2007-11-29 2011-11-15 Globalfoundries Singapore Pte. Ltd. Integrated circuit and method of fabrication thereof
JP5331618B2 (ja) * 2009-08-28 2013-10-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8436404B2 (en) 2009-12-30 2013-05-07 Intel Corporation Self-aligned contacts
US8389300B2 (en) 2010-04-02 2013-03-05 Centre National De La Recherche Scientifique Controlling ferroelectricity in dielectric films by process induced uniaxial strain
US8669617B2 (en) 2010-12-23 2014-03-11 Intel Corporation Multi-gate transistors
US8896030B2 (en) 2012-09-07 2014-11-25 Intel Corporation Integrated circuits with selective gate electrode recess
CN103730468B (zh) * 2012-10-16 2017-12-01 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法、sram存储单元、sram存储器
US10868141B2 (en) 2015-12-31 2020-12-15 Taiwan Semiconductor Manufacturing Company Ltd. Spacer structure and manufacturing method thereof
US10032906B2 (en) * 2016-04-29 2018-07-24 Samsung Electronics Co., Ltd. Vertical field effect transistor and method of fabricating the same
US11667128B2 (en) 2018-05-15 2023-06-06 Hewlett-Packard Development Company, L.P. Fluidic die with monitoring circuit fault protection structure
KR20210073142A (ko) * 2019-12-10 2021-06-18 삼성전자주식회사 반도체 장치

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US710765A (en) * 1902-03-28 1902-10-07 Andrew Chase Cunningham Floating dry-dock.
JPH03257962A (ja) * 1990-03-08 1991-11-18 Fujitsu Ltd 半導体装置の製造方法
KR950000141B1 (ko) * 1990-04-03 1995-01-10 미쓰비시 뎅끼 가부시끼가이샤 반도체 장치 및 그 제조방법
KR950034830A (ko) * 1994-04-29 1995-12-28 빈센트 비. 인그라시아 전계 효과 트랜지스터 및 이 트랜지스터의 제조 방법
JP3761918B2 (ja) * 1994-09-13 2006-03-29 株式会社東芝 半導体装置の製造方法
US5710450A (en) * 1994-12-23 1998-01-20 Intel Corporation Transistor with ultra shallow tip and method of fabrication
US6417550B1 (en) * 1996-08-30 2002-07-09 Altera Corporation High voltage MOS devices with high gated-diode breakdown voltage and punch-through voltage
US5898202A (en) 1996-12-03 1999-04-27 Advanced Micro Devices, Inc. Selective spacer formation for optimized silicon area reduction
US6335565B1 (en) * 1996-12-04 2002-01-01 Hitachi, Ltd. Semiconductor device
KR19980078235A (ko) * 1997-04-25 1998-11-16 문정환 반도체 소자의 제조 방법
TW359005B (en) 1997-09-01 1999-05-21 United Microelectronics Corp Method for manufacturing mixed circuit bi-gap wall structure
KR100487504B1 (ko) 1997-12-12 2005-07-07 삼성전자주식회사 서로 다른 게이트 스페이서 형성 방법
US6121100A (en) * 1997-12-31 2000-09-19 Intel Corporation Method of fabricating a MOS transistor with a raised source/drain extension
US6198142B1 (en) * 1998-07-31 2001-03-06 Intel Corporation Transistor with minimal junction capacitance and method of fabrication
US6239472B1 (en) 1998-09-01 2001-05-29 Philips Electronics North America Corp. MOSFET structure having improved source/drain junction performance
US6887762B1 (en) * 1998-11-12 2005-05-03 Intel Corporation Method of fabricating a field effect transistor structure with abrupt source/drain junctions
US7629028B2 (en) * 1999-03-19 2009-12-08 Battelle Memorial Insitute Methods of making monolayers
KR100332106B1 (ko) * 1999-06-29 2002-04-10 박종섭 반도체 소자의 트랜지스터 제조 방법
JP2001093984A (ja) * 1999-09-20 2001-04-06 Matsushita Electronics Industry Corp 半導体装置およびその製造方法
US6255152B1 (en) * 1999-10-01 2001-07-03 United Microelectronics Corp. Method of fabricating CMOS using Si-B layer to form source/drain extension junction
US7391087B2 (en) * 1999-12-30 2008-06-24 Intel Corporation MOS transistor structure and method of fabrication
US6541343B1 (en) * 1999-12-30 2003-04-01 Intel Corporation Methods of making field effect transistor structure with partially isolated source/drain junctions
US6372583B1 (en) * 2000-02-09 2002-04-16 Intel Corporation Process for making semiconductor device with epitaxially grown source and drain
JP2001244469A (ja) * 2000-03-02 2001-09-07 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
US6368926B1 (en) * 2000-03-13 2002-04-09 Advanced Micro Devices, Inc. Method of forming a semiconductor device with source/drain regions having a deep vertical junction
US6495402B1 (en) * 2001-02-06 2002-12-17 Advanced Micro Devices, Inc. Semiconductor-on-insulator (SOI) device having source/drain silicon-germanium regions and method of manufacture
US6734109B2 (en) 2001-08-08 2004-05-11 International Business Machines Corporation Method of building a CMOS structure on thin SOI with source/drain electrodes formed by in situ doped selective amorphous silicon
US6890824B2 (en) * 2001-08-23 2005-05-10 Matsushita Electric Industrial Co., Ltd. Semiconductor device and manufacturing method thereof
US6621131B2 (en) * 2001-11-01 2003-09-16 Intel Corporation Semiconductor transistor having a stressed channel
KR100406537B1 (ko) * 2001-12-03 2003-11-20 주식회사 하이닉스반도체 반도체장치의 제조 방법
US6506642B1 (en) * 2001-12-19 2003-01-14 Advanced Micro Devices, Inc. Removable spacer technique
FR2838237B1 (fr) * 2002-04-03 2005-02-25 St Microelectronics Sa Procede de fabrication d'un transistor a effet de champ a grille isolee a canal contraint et circuit integre comprenant un tel transistor
US7473947B2 (en) * 2002-07-12 2009-01-06 Intel Corporation Process for ultra-thin body SOI devices that incorporate EPI silicon tips and article made thereby
DE10246718A1 (de) 2002-10-07 2004-04-22 Infineon Technologies Ag Feldeffekttransistor mit lokaler Source-/Drainisolation sowie zugehöriges Herstellungsverfahren
US6743684B2 (en) * 2002-10-11 2004-06-01 Texas Instruments Incorporated Method to produce localized halo for MOS transistor
US6806584B2 (en) * 2002-10-21 2004-10-19 International Business Machines Corporation Semiconductor device structure including multiple fets having different spacer widths
US6864135B2 (en) 2002-10-31 2005-03-08 Freescale Semiconductor, Inc. Semiconductor fabrication process using transistor spacers of differing widths
US6943077B2 (en) * 2003-04-07 2005-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Selective spacer layer deposition method for forming spacers with different widths
FR2854276A1 (fr) 2003-04-24 2004-10-29 Koninkl Philips Electronics Nv Dispositif semiconducteur comprenant des extensions realisees en un materiau a faible temperature de fusion.
US7045408B2 (en) * 2003-05-21 2006-05-16 Intel Corporation Integrated circuit with improved channel stress properties and a method for making it
US20040262683A1 (en) * 2003-06-27 2004-12-30 Bohr Mark T. PMOS transistor strain optimization with raised junction regions
US7279746B2 (en) 2003-06-30 2007-10-09 International Business Machines Corporation High performance CMOS device structures and method of manufacture
US7019326B2 (en) * 2003-11-14 2006-03-28 Intel Corporation Transistor with strain-inducing structure in channel
US6946709B2 (en) 2003-12-02 2005-09-20 International Business Machines Corporation Complementary transistors having different source and drain extension spacing controlled by different spacer sizes
US7101765B2 (en) 2004-03-31 2006-09-05 Intel Corporation Enhancing strained device performance by use of multi narrow section layout
US7112859B2 (en) * 2004-05-17 2006-09-26 Intel Corporation Stepped tip junction with spacer layer
JP2006041118A (ja) * 2004-07-26 2006-02-09 Toshiba Corp 半導体装置及びその製造方法
US20060065937A1 (en) * 2004-09-30 2006-03-30 Thomas Hoffmann Short channel effect of MOS devices by retrograde well engineering using tilted dopant implantation into recessed source/drain regions
US7335959B2 (en) * 2005-01-06 2008-02-26 Intel Corporation Device with stepped source/drain region profile
US7541239B2 (en) 2006-06-30 2009-06-02 Intel Corporation Selective spacer formation on transistors of different classes on the same device

Also Published As

Publication number Publication date
KR20090028565A (ko) 2009-03-18
HK1131260A1 (zh) 2010-01-15
CN101454884A (zh) 2009-06-10
US20090189193A1 (en) 2009-07-30
US8174060B2 (en) 2012-05-08
US20110157854A1 (en) 2011-06-30
DE112007001161T5 (de) 2009-05-20
KR101065827B1 (ko) 2011-09-20
TW200824008A (en) 2008-06-01
CN101454884B (zh) 2012-07-04
WO2008005377A2 (en) 2008-01-10
US7541239B2 (en) 2009-06-02
DE112007001161B4 (de) 2013-03-28
WO2008005377A3 (en) 2008-02-21
US8154067B2 (en) 2012-04-10
US20080003746A1 (en) 2008-01-03

Similar Documents

Publication Publication Date Title
TWI347641B (en) Selective spacer formation on transistors of different classes on the same device
EG25248A (en) Can opening device.
GB0616984D0 (en) Transistor
GB0616985D0 (en) Transistor
GB2427560B (en) Cathether device
EP1979079A4 (en) MICROFLUIDIC DEVICES
EP2046023A4 (en) AV DEVICE
BRPI0610471A2 (pt) dispositivo de reprodução
EP2017577A4 (en) NAVIGATION DEVICE
GB0617934D0 (en) Transistor
EP2057751A4 (en) DEVICE FOR SEIZING CHARACTERS
GB0617068D0 (en) Transistor
PL2425947T3 (pl) Urządzenie do prasowania włókna
DE502007000710D1 (de) Belüftungsvorrichtung
GB0602743D0 (en) Microfluidic device
GB0608431D0 (en) Device
ZA200608695B (en) Extrusion device
EP2034448A4 (en) ONBOARD DEVICE
TWI346855B (en) Gate driving circuit and the driving method thereof
ITMI20060335A1 (it) Dispositivo porta-cristallizzatore
GB2428886B (en) Transistor
TWI319623B (en) Transistor structure and control unit comprising the same
EP1871207A4 (en) INSTALLATION DEVICE
TWI318800B (en) Mos device with ritds and method for making the same
GB0616983D0 (en) Transistor

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees