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TWI346392B - Low forward voltage drop transient voltage suppressor and method of fabricating - Google Patents

Low forward voltage drop transient voltage suppressor and method of fabricating

Info

Publication number
TWI346392B
TWI346392B TW096122248A TW96122248A TWI346392B TW I346392 B TWI346392 B TW I346392B TW 096122248 A TW096122248 A TW 096122248A TW 96122248 A TW96122248 A TW 96122248A TW I346392 B TWI346392 B TW I346392B
Authority
TW
Taiwan
Prior art keywords
fabricating
low forward
voltage drop
suppressor
forward voltage
Prior art date
Application number
TW096122248A
Other languages
English (en)
Other versions
TW200818518A (en
Inventor
Lung Ching Kao
Pu Ju Kung
Yu Ju Yu
Original Assignee
Vishay General Semiconductor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vishay General Semiconductor filed Critical Vishay General Semiconductor
Publication of TW200818518A publication Critical patent/TW200818518A/zh
Application granted granted Critical
Publication of TWI346392B publication Critical patent/TWI346392B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
    • Y10T29/49171—Assembling electrical component directly to terminal or elongated conductor with encapsulating
TW096122248A 2006-06-23 2007-06-21 Low forward voltage drop transient voltage suppressor and method of fabricating TWI346392B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80568906P 2006-06-23 2006-06-23

Publications (2)

Publication Number Publication Date
TW200818518A TW200818518A (en) 2008-04-16
TWI346392B true TWI346392B (en) 2011-08-01

Family

ID=38786998

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096122248A TWI346392B (en) 2006-06-23 2007-06-21 Low forward voltage drop transient voltage suppressor and method of fabricating

Country Status (6)

Country Link
US (2) US8111495B2 (zh)
EP (1) EP2033225A2 (zh)
JP (2) JP2009541996A (zh)
CN (1) CN101563784B (zh)
TW (1) TWI346392B (zh)
WO (1) WO2008002421A2 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8111495B2 (en) * 2006-06-23 2012-02-07 Vishay General Semiconductor, Llc Low forward voltage drop transient voltage suppressor and method of fabricating
CN102142433A (zh) * 2011-03-01 2011-08-03 上海旭福电子有限公司 瞬变电压抑制二极管和肖特基二极管组合的晶体管
JP2013115794A (ja) * 2011-12-01 2013-06-10 Yazaki Corp リレー装置
CN102456719B (zh) * 2011-12-29 2014-02-26 东南大学 一种可提高pn结反向击穿电压的装置
JP6213006B2 (ja) * 2013-07-19 2017-10-18 富士通セミコンダクター株式会社 半導体装置
US9224702B2 (en) * 2013-12-12 2015-12-29 Amazing Microelectronic Corp. Three-dimension (3D) integrated circuit (IC) package
US10103540B2 (en) * 2014-04-24 2018-10-16 General Electric Company Method and system for transient voltage suppression devices with active control
CN105261616B (zh) 2015-09-22 2018-05-11 矽力杰半导体技术(杭州)有限公司 瞬态电压抑制器及其制造方法
US9949326B2 (en) * 2016-06-08 2018-04-17 Texas Instruments Incorporated Predictive LED forward voltage for a PWM current loop
CN106024912A (zh) * 2016-07-27 2016-10-12 电子科技大学 三端自带防护功能的垂直型恒流器件及其制造方法
CN106206574A (zh) * 2016-07-27 2016-12-07 电子科技大学 三端自带防护功能的垂直型恒流器件及其制造方法
FR3122769A1 (fr) * 2021-05-07 2022-11-11 Stmicroelectronics (Tours) Sas Dispositif de suppression de tensions transitoires unidirectionnel sans conduction en direct

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5674761A (en) * 1996-05-02 1997-10-07 Etron Technology, Inc. Method of making ESD protection device structure for low supply voltage applications
AU6252098A (en) 1997-02-07 1998-08-26 Cooper Industries, Inc. Spark gap transient voltage suppressor and method of making spark gap transient voltage suppressor
US6489660B1 (en) 2001-05-22 2002-12-03 General Semiconductor, Inc. Low-voltage punch-through bi-directional transient-voltage suppression devices
US20040075160A1 (en) 2002-10-18 2004-04-22 Jack Eng Transient voltage suppressor having an epitaxial layer for higher avalanche voltage operation
DE102004053761A1 (de) 2004-11-08 2006-05-18 Robert Bosch Gmbh Halbleitereinrichtung und Verfahren für deren Herstellung
US20060278889A1 (en) * 2005-06-09 2006-12-14 Lite-On Semiconductor Corp. Power rectifier and manufacturing method thereof
US20080068868A1 (en) * 2005-11-29 2008-03-20 Advanced Analogic Technologies, Inc. Power MESFET Rectifier
US8111495B2 (en) * 2006-06-23 2012-02-07 Vishay General Semiconductor, Llc Low forward voltage drop transient voltage suppressor and method of fabricating

Also Published As

Publication number Publication date
US8111495B2 (en) 2012-02-07
CN101563784B (zh) 2011-04-20
US20080013240A1 (en) 2008-01-17
US20120200975A1 (en) 2012-08-09
US8982524B2 (en) 2015-03-17
TW200818518A (en) 2008-04-16
JP2009541996A (ja) 2009-11-26
JP2013080946A (ja) 2013-05-02
HK1135797A1 (zh) 2010-06-11
WO2008002421A3 (en) 2008-02-14
CN101563784A (zh) 2009-10-21
EP2033225A2 (en) 2009-03-11
WO2008002421A2 (en) 2008-01-03

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